CN102610762A - Film packaging method of organic light-emitting device - Google Patents
Film packaging method of organic light-emitting device Download PDFInfo
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- CN102610762A CN102610762A CN2011100246489A CN201110024648A CN102610762A CN 102610762 A CN102610762 A CN 102610762A CN 2011100246489 A CN2011100246489 A CN 2011100246489A CN 201110024648 A CN201110024648 A CN 201110024648A CN 102610762 A CN102610762 A CN 102610762A
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Abstract
The invention provides a film packaging method of an organic light-emitting device, at least three film sealing layers are deposited on a baseboard from bottom to top, wherein inorganic material and organic material are alternatively deposited on each film sealing layer; a chemical vapor deposition method is preferentially carried out on the organic film sealing layer, and an iron beam sputtering method or an atomic layer deposition method or an magnetron sputtering deposition can be carried out on the inorganic film sealing layer; the early deposited film sealing layer is thinner than the film sealing layer deposited latter; different mask plates are adopted to deposit each film sealing layer, the geometry sizes of the patterns of the mask plates of the first layer, the second layer and the third layer increase sequentially. According to the film packaging method of the organic light-emitting device, the crack caused by plate breaking can be effectively reduced, the space between the sealing layer and the baseboard can be prevented from tilting resulting in air leakage during cutting, and the service life of the device can be effectively prolonged.
Description
Technical field
The present invention relates to the preparation technology of a kind of organic light emitting diodde desplay device (OLED), particularly a kind of organic light-emitting device film encapsulation method.
Background technology
In recent years, the Organic Light Emitting Diode (OLED) that belongs to selfluminous device has caused people's extensive concern as flat-panel display device.The life-span of OLED device is depended on the organic material of being selected for use on the one hand, also depends on the method for packing of device on the other hand.For organic electronic device, especially OLED wants strict stopping to get into organic substance and the electrode that device inside touches sensitivity from the oxygen and the moisture of surrounding environment.Because inner in the OLED device, the existence of moisture or oxygen causes the degeneration or the inefficacy of its characteristic easily, even the moisture of trace also can the organifying compound layer be peeled off the generation blackspot with electrode layer.Thereby, being inhibited for making the degeneration and the inefficacy of OLED device in the long-term work process, steady operation reaches enough life-spans, to the very high requirement of barrier proposition of encapsulating material.Nowadays commonly used is to adopt etching glass cover or metal shell to cover organic luminous component; Around the organic light emission part, apply sealant; And moisture absorbent is placed on wherein; So that oxygen and moisture keep clear of or arrive organic substance before at least by the gettering material intercepting, thereby guarantee the life-span of organic light emitting apparatus.Yet the quality of such seal casinghousing is bigger, makes the overall dimensions of device also thicken thereupon, does not meet frivolous requirement.And metal is opaque, makes metal also be inappropriate for some application.Therefore, for the requirement that realizes that OLED is lighter and thinner, be necessary to eliminate by moisture absorbent and the shared space of glass/metal housing.So numerous researchers have turned to thin-film package with sight, in thin-film package, in order to limit or prevent the invasion of moisture and oxygen, encapsulating structure disposes piling up of plural layers.
Existing thin-film package technology is piled up encapsulant layer by layer, and this encapsulation technology sealing effectiveness is bad, and pin hole, crack are more, and in the process of substrate breaking, cause easily layer with layer between produce the crack.To this problem; The present invention proposes in the process of deposit film, to utilize metallic mask that unwanted place is blocked; Make depositing of thin film produce sealing effectiveness as shown in Figure 2, promptly superincumbent one deck must coat the edge of following one deck fully, forms one by one independently sealing unit.The pattern of mask is consistent with single organic light-emitting device pattern, is slightly larger than the profile of luminescent device, and the employed mask perforated area of lower floor's sealant is slightly less than the profile of its last layer sealant.The thin film sealant uses a kind of mask, deposited after one deck change automatically in vacuum cavity by manipulator under the used mask of thin film.As shown in Figure 2, the single product that cutting splitting comes out after having encapsulated so can not be exposed to the section of packaging film in the atmosphere.
For example, at WO 03/050894A2, described this thin-film package among the CN100499953C, the sealing layer is preferably formed by inorganic thin film, and inorganic layer has high barrier effect.Yet; Because inorganic thin film elasticity is lower, internal stress is big, thereby almost to disperseing mechanical stress not have help; On the other hand; Because the inorganic thin film encapsulated layer is a solid bed, in sealant, form the crack when the cutting easily or cause the part sealant to be peeled off, make moisture and oxygen to get into device inside through the crack.For this reason, be known in organic layer or polymeric layer are set between the inorganic layer, these organic layers or polymeric layer have more high resiliency, thereby can effectively suppress cracking.Layer structure example like this is as proposing in CN 101106178A, although obtain good result thus, final sealing effectiveness is still not fully up to expectations.Because it is inner that moisture and oxygen generally are difficult to get into organic assembly from the thickness direction of sealant, but easily from the edge of sealant and the chance that gets into of the position of sealant and substrates more greatly.
Summary of the invention
In order to overcome the deficiency of above-mentioned prior art; The purpose of this invention is to provide a kind of organic light-emitting device film encapsulation method, it is simple that this method has technology, easy to operate; The seal casinghousing quality is close little; Avoid crackle and perk, good sealing effect, the characteristics that help prolonging organic light-emitting device life period.
To achieve these goals, the technical scheme that the present invention adopted is: a kind of organic light-emitting device film encapsulation method comprises:
1, on substrate 01, deposit three-layer thin- film sealant 03,04,05 from bottom to top at least, each layer film sealant adopts inorganic material and organic material alternating deposit respectively; Deposit each thin film encapsulation layers 03,04,05 and adopt different masks (10);
2, the thickness of said thin film encapsulation layers 03 is 15-50nm, and the thickness of thin film encapsulation layers 04 is 50-200nm, and the thickness of thin film encapsulation layers 05 is 100-200nm, and the elastic membrane sealing layer thickness of the back deposition of the thin film encapsulation layers of first deposition is little;
3, the material of said inorganic thin film sealant is Al
2O
3, SiN, SiO
2, a kind of among the SiNO, preferred Al
2O
3
4, the material of said organic film sealant is a kind of of parylene (Parylene) or polyureas (Polyurea);
5, used mask pattern (11) physical dimension of said each thin film encapsulation layers is that ground floor is minimum, and the second layer and the 3rd layer increase progressively 50nm successively;
6, the organic film sealant preferentially adopts chemical vapour deposition technique, and inorganic sealant can adopt ion beam sputtering, or ald, or magnetron sputtering deposition.
Compared with prior art, the present invention has following major advantage: can effectively reduce the phenomenon that crackle appears afterwards in sliver, cause when avoiding cutting between sealant and the substrate 01 perk to occur and gas leak phenomenon, the life-span of effectively improving organic display spare.
Description of drawings
Fig. 1 is the thin-film package of not using mask sketch map as a result.
Fig. 2 is the thin-film package of using mask among the present invention sketch map as a result.
Fig. 3 is a difference with the prior art comparison diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment method for packing of the present invention is further specified.
Referring to Fig. 1,2,3, a kind of organic light-emitting device film encapsulation method is included in and deposits the three-layer thin-film sealant on the substrate 01 at least, wherein first, the 3rd and layer 5 (optional layer) be the inorganic material film sealant, can select Al for use
2O
3, SiN, SiO
2, a kind of among the SiNO, preferred Al
2O
3Adopting ion beam sputter depositing, is 10 in the deposit cavity
-5-10
-6The vacuum degree of Pa, sedimentation time are 3-20min, and deposit thickness is 15-200nm.
The second layer and the 4th layer (optional layer) are the organic material film sealant, preferentially adopt chemical vapor deposition (CVD), can select a kind of in Parylene or the Polyurea material for use, preferentially adopt Parylene; Be 10 in the deposit cavity
-5-10
-6The vacuum degree of Pa, sedimentation time are 5-20min, and deposit thickness is 50-200nm.
Embodiment 1
The present invention utilizes the mask technology in the process of deposit film, make the film that is deposited produce sealing effectiveness as shown in Figure 2, and promptly superincumbent sealant coats the edge of following sealant fully, forms one by one independently sealing unit.This mask is the nickel steel material, and the pattern of mask is consistent with single organic light-emitting device pattern, and thin film encapsulation layers 03/04/05 employed mask size increases 50 microns successively.
The first step: deposition inorganic thin film sealant 03, this layer adopts ion beam sputter depositing, and encapsulant is selected Al for use
2O
3, be 10 in the deposit cavity
-6The vacuum degree of Pa, sedimentation time are 3min, and deposit thickness is 15nm.
This step has been accomplished the inorganic sealant 03 of the thick 15nm of preparation on substrate 01.
Second step: deposition of organic thin film sealant 04, this layer adopts chemical vapor deposition (CVD), and encapsulant adopts C type polychlorostyrene for paraxylene, is 10 in the deposit cavity
-6The vacuum degree of Pa, sedimentation time are 5min, and deposit thickness is 50nm.
At first 120 ℃ in other device distil solid-state C type Parylene down, then in the time of 650 ℃, make the cracking of 2 side chain carbon-carbon bonds, generate stable activated monomer; Again this activated monomer is introduced in the deposit cavity through conduit, adjusted the vacuum degree in the deposit cavity and configure sedimentation time, preparing on the substrate 01 that has or not secret seal 03; Deposit secret seal 04 with room temperature environment; Accomplish deposition behind the 10min, take out second layer mask, change the tri-layer masking version.
This step has been accomplished the preparation of organic sealant 04 on substrate 01, i.e. instaneous polymerization condensation is adsorbed on substrate and the inorganic thin film sealant, forms the organic film sealant of even compact.
The 3rd step: deposition inorganic thin film sealant 05, this layer adopts ion beam sputter depositing, and encapsulant adopts SiON, is 10 in the deposit cavity
-6The vacuum degree of Pa, sedimentation time 20min, deposit thickness are 100nm.
Adjust the vacuum degree in the deposit cavity and configure sedimentation time, deposition process is identical with the first step, accomplishes deposition behind the 20min, takes out the tri-layer masking version, changes the 4th layer of mask.
This step has been accomplished the thick inorganic sealant 05 of second layer 15nm that on substrate 01, has prepared 04 organic film sealant.
The 4th step: deposition of organic thin film sealant 06, this layer adopts chemical vapor deposition (CVD), and encapsulant adopts C type polychlorostyrene for paraxylene, is 10 in the deposit cavity
-6The vacuum degree of Pa, sedimentation time 15min, deposit thickness are 100nm.
Adjust the vacuum degree in the deposit cavity and configure sedimentation time; At first 120 ℃ in other device distil solid-state C type Parylene down, then in the time of 650 ℃, make the cracking of 2 side chain carbon-carbon bonds, generate stable activated monomer; Again this activated monomer is introduced in the deposit cavity through conduit; Deposition process is identical with second step, takes out the 4th layer of mask after the 20min deposition is accomplished, and changes the layer 5 mask.
The 5th step: deposition inorganic thin film sealant 07, this layer adopts ion beam sputter depositing, and encapsulant is selected SiON for use, is 10 in the deposit cavity
-6The vacuum degree of Pa, sedimentation time 20min, deposit thickness are 100nm.
Adjust the vacuum degree in the deposit cavity and configure sedimentation time, deposition process is identical with the first step.After 20min accomplishes deposition, take out substrate 01 and get final product with the layer 5 mask.
Embodiment 2
The first step: deposition inorganic thin film sealant 03, this layer adopts magnetron sputtering deposition, and encapsulant is selected Al for use
2O
3, be 10 in the deposit cavity
-6The vacuum degree of Pa, sedimentation time 5min, deposit thickness are 50nm.
This step has been accomplished preparation inorganic thin film sealant 03 on substrate 01.
Second step: deposition of organic thin film sealant 04, this layer adopts chemical vapor deposition (CVD), and encapsulant adopts polyureas, is 10 in the deposit cavity
-6The vacuum degree of Pa, sedimentation time are 10min, and deposit thickness is 100nm.
At first down solid-state C type Parylene is distilled at 150 ℃; Then 2 side chain carbon-carbon bonds cracking in the time of 680 ℃; Generate stable activated monomer, again this activated monomer is introduced in the vacuum deposit chamber through conduit, adjust the vacuum degree in the deposit cavity and configure sedimentation time; Have in preparation on the substrate 01 of inorganic thin film encapsulation layers 03, with the organic sealant 04 of room temperature deposition.After 10min accomplishes deposition, take out second layer mask, change the tri-layer masking version.
This step has been accomplished the preparation of organic film sealant 04 on substrate 01, i.e. instaneous polymerization condensation is adsorbed on substrate and the inorganic thin film sealant, forms the organic film sealant of even compact.
The 3rd step: deposition inorganic thin film sealant 05, this layer adopts magnetron sputtering deposition, and inorganic thin film sealant 05 is selected SiON for use, is 10 in the deposit cavity
-6The vacuum degree of Pa, sedimentation time 20min, deposit thickness are 200nm.
Adjust the vacuum degree in the deposit cavity and configure sedimentation time, the same first step of deposition process, 20min accomplishes the deposition back and takes out the tri-layer masking version, changes the 4th layer of mask.
The 4th step: deposition of organic thin film sealant 06, this layer adopts chemical vapor deposition (CVD), and encapsulant adopts C type polychlorostyrene for paraxylene, is 10 in the deposit cavity
-6The vacuum degree of Pa, sedimentation time 10min, deposit thickness are 100nm.
At first down solid-state C type Parylene is distilled at 140 ℃; Then 2 side chain carbon-carbon bonds cracking in the time of 660 ℃ generates stable activated monomer, this activated monomer is introduced in the vacuum deposit chamber through conduit again; Adjust the vacuum degree in the deposit cavity and configure sedimentation time; Deposition process and sublimation temperature are taken out the 4th layer of mask with second step after the 10min deposition is accomplished, and change the layer 5 mask.
The 5th step: deposition inorganic thin film sealant 07, this layer adopts magnetron sputtering deposition, and encapsulant is selected SiON for use, is 10 in the deposit cavity
-6The vacuum degree of Pa, sedimentation time 10min, deposit thickness are 100nm.The same first step of deposition process, deposition accomplish back taking-up layer 5 mask and the substrate 01 of good seal get final product.
Embodiment 3
The first step: deposit inorganic sealant 03, this layer adopts magnetron sputtering deposition, and encapsulant is selected SiN for use, the vacuum degree 10 in the deposit cavity
-5Pa, sedimentation time 3min, deposit thickness are 30nm.
This step has been accomplished and on substrate 01, has been adopted the inorganic sealant 03 of SiN material preparation.
Second step: deposition of organic thin film sealant 04, this layer adopts chemical vapor deposition (CVD), and encapsulant adopts C type polychlorostyrene for paraxylene, the vacuum degree 10 in the deposit cavity
-5Pa, sedimentation time are 20min, and deposit thickness is 200nm.
At first down solid-state C type polychlorostyrene is distilled for paraxylene at 100 ℃; Then 630 ℃ of 2 side chain carbon-carbon bonds cracking constantly; Generate stable activated monomer, again this activated monomer is introduced in the deposit cavity through conduit, adjust the vacuum degree in the deposit cavity and configure sedimentation time; 2min accomplishes the deposition back and takes out second layer mask, changes the tri-layer masking version.
This step has been accomplished the preparation of organic film sealant 04 on substrate 01, i.e. instaneous polymerization condensation is adsorbed on substrate and the inorganic thin film sealant, forms the organic film sealant of even compact.
The 3rd step: deposition inorganic thin film sealant 05, the inorganic thin film sealant adopts magnetron sputtering deposition, and inorganic thin film sealant 05 is selected SiO for use, the vacuum degree 10 in the deposit cavity
-5Pa, sedimentation time 15min, deposit thickness are 150nm.
Adjust the vacuum degree in the deposit cavity and configure sedimentation time, the same first step of deposition process, 15min accomplishes the deposition back and takes out the tri-layer masking version, changes the 4th layer of mask.
The 4th step: deposition of organic thin film sealant 06, this layer adopts chemical vapor deposition (CVD), and encapsulant adopts C type polychlorostyrene for paraxylene, the vacuum degree 10 in the deposit cavity
-5Pa, sedimentation time are 10min, and deposit thickness is 100nm.
At first down solid-state C type polychlorostyrene is distilled for paraxylene at 100 ℃; Then 2 side chain carbon-carbon bonds cracking in the time of 630 ℃ generates stable activated monomer, this activated monomer is introduced in the deposit cavity through conduit again; Adjust the vacuum degree in the deposit cavity and configure sedimentation time; 20min takes out the 4th layer of mask after accomplishing deposition, changes the layer 5 mask and is placed on corresponding position.
This step has been accomplished preparation second layer organic film sealant 04 on substrate 01, i.e. instaneous polymerization condensation is adsorbed on substrate and the inorganic thin film sealant, forms the organic film sealant of even compact.
The 5th step: deposition inorganic thin film sealant 07, this layer adopts magnetron sputtering deposition, and encapsulant is selected SiO for use, the vacuum degree 10 in the deposit cavity
-5Pa, sedimentation time 10min, deposit thickness are 100nm.
Adjust in the deposit cavity vacuum degree with configure sedimentation time, the same first step of deposition process, accomplish behind the 10min deposition back take out the layer 5 mask and sealed after substrate 01 get final product.
This step has been accomplished the 3rd layer of inorganic sealant 07 of preparation on substrate 01.
Among the figure: 01 is substrate, and 02 is the OLED body, and 03 is the inorganic thin film sealant, and 04 is the organic film sealant, and 05 is the inorganic thin film sealant, and 10 is mask, and 11 is the mask pattern.
Claims (6)
1. an organic light-emitting device film encapsulation method is characterized in that, on substrate 01, deposits three-layer thin-film sealant 03,04,05 from bottom to top at least, and each layer film sealant adopts inorganic material and organic material alternating deposit respectively; Deposit each thin film encapsulation layers 03,04,05 and adopt different masks (10).
2. a kind of organic light-emitting device film encapsulation method according to claim 1; It is characterized in that: the thickness of described thin film encapsulation layers 03 is 15-50nm; The thickness of thin film encapsulation layers 04 is 50-200nm; The thickness of thin film encapsulation layers 05 is 100-200nm, and the elastic membrane sealing layer thickness of the back deposition of the thin film encapsulation layers of first deposition is little.
3. a kind of organic light-emitting device film encapsulation method according to claim 1, it is characterized in that: the material of described inorganic thin film sealant is Al
2O
3, SiN, SiO
2, a kind of among the SiNO, preferred Al
2O
3
4. a kind of organic light-emitting device film encapsulation method according to claim 1 is characterized in that: the material of described organic film sealant is a kind of of parylene (Parylene) or polyureas (Polyurea).
5. a kind of organic light-emitting device film encapsulation method according to claim 1 is characterized in that: used mask pattern (11) physical dimension of described each thin film encapsulation layers is that ground floor is minimum, and the second layer and the 3rd layer increase progressively 50nm successively.
6. a kind of organic light-emitting device film encapsulation method according to claim 1; It is characterized in that: described organic film sealant preferentially adopts chemical vapour deposition technique; The inorganic thin film sealant can adopt ion beam sputtering, or ald, or magnetron sputtering deposition.
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|---|---|---|---|
| CN2011100246489A CN102610762A (en) | 2011-01-21 | 2011-01-21 | Film packaging method of organic light-emitting device |
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|---|---|---|---|
| CN2011100246489A CN102610762A (en) | 2011-01-21 | 2011-01-21 | Film packaging method of organic light-emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103490019A (en) * | 2013-09-29 | 2014-01-01 | 京东方科技集团股份有限公司 | Organic electroluminescence device packaging structure and method and display device |
| CN103682054A (en) * | 2013-12-23 | 2014-03-26 | 福州大学 | Graphene based flexible photoelectric device packaging method |
| CN104037360A (en) * | 2014-06-25 | 2014-09-10 | 上海和辉光电有限公司 | Organic light-emitting device, packaging structure and method |
| CN104183709A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN104518174A (en) * | 2014-12-08 | 2015-04-15 | 深圳市华星光电技术有限公司 | OLED (organic light emitting diode) device |
| CN104637890A (en) * | 2013-11-14 | 2015-05-20 | 昆山工研院新型平板显示技术中心有限公司 | Thin film packaging structure |
| CN105845442A (en) * | 2015-10-28 | 2016-08-10 | 钰邦电子（无锡）有限公司 | Solid electrolytic capacitor package structure and manufacturing method thereof |
| CN107154464A (en) * | 2016-03-02 | 2017-09-12 | 三星显示有限公司 | The method for manufacturing display device |
| CN108022878A (en) * | 2017-11-30 | 2018-05-11 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN109411623A (en) * | 2018-09-30 | 2019-03-01 | 云谷（固安）科技有限公司 | A kind of display panel |
| CN109962180A (en) * | 2019-03-01 | 2019-07-02 | 昆山国显光电有限公司 | A kind of preparation method of display panel |
| CN110190090A (en) * | 2019-05-15 | 2019-08-30 | 武汉华星光电半导体显示技术有限公司 | OLED encapsulating structure and display panel |
| US10553825B2 (en) | 2017-03-23 | 2020-02-04 | Boe Technology Group Co., Ltd. | Encapsulation structure, manufacturing method thereof and display apparatus |
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| CN104183709A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN103490019B (en) * | 2013-09-29 | 2016-02-17 | 京东方科技集团股份有限公司 | The encapsulating structure of organic electroluminescence device and method for packing, display unit |
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| CN103490019A (en) * | 2013-09-29 | 2014-01-01 | 京东方科技集团股份有限公司 | Organic electroluminescence device packaging structure and method and display device |
| CN104637890B (en) * | 2013-11-14 | 2017-09-22 | 昆山工研院新型平板显示技术中心有限公司 | A kind of thin-film packing structure |
| CN104637890A (en) * | 2013-11-14 | 2015-05-20 | 昆山工研院新型平板显示技术中心有限公司 | Thin film packaging structure |
| CN103682054A (en) * | 2013-12-23 | 2014-03-26 | 福州大学 | Graphene based flexible photoelectric device packaging method |
| CN103682054B (en) * | 2013-12-23 | 2016-05-04 | 福州大学 | A kind of flexible photoelectric device method for packing based on Graphene |
| CN104037360A (en) * | 2014-06-25 | 2014-09-10 | 上海和辉光电有限公司 | Organic light-emitting device, packaging structure and method |
| CN104518174A (en) * | 2014-12-08 | 2015-04-15 | 深圳市华星光电技术有限公司 | OLED (organic light emitting diode) device |
| CN105845442A (en) * | 2015-10-28 | 2016-08-10 | 钰邦电子（无锡）有限公司 | Solid electrolytic capacitor package structure and manufacturing method thereof |
| CN107154464A (en) * | 2016-03-02 | 2017-09-12 | 三星显示有限公司 | The method for manufacturing display device |
| CN107154464B (en) * | 2016-03-02 | 2021-01-29 | 三星显示有限公司 | Method of manufacturing display device |
| US10553825B2 (en) | 2017-03-23 | 2020-02-04 | Boe Technology Group Co., Ltd. | Encapsulation structure, manufacturing method thereof and display apparatus |
| CN108022878A (en) * | 2017-11-30 | 2018-05-11 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN109411623A (en) * | 2018-09-30 | 2019-03-01 | 云谷（固安）科技有限公司 | A kind of display panel |
| CN109962180A (en) * | 2019-03-01 | 2019-07-02 | 昆山国显光电有限公司 | A kind of preparation method of display panel |
| CN109962180B (en) * | 2019-03-01 | 2020-11-10 | 昆山国显光电有限公司 | Preparation method of display panel |
| CN110190090A (en) * | 2019-05-15 | 2019-08-30 | 武汉华星光电半导体显示技术有限公司 | OLED encapsulating structure and display panel |
| WO2020228127A1 (en) * | 2019-05-15 | 2020-11-19 | 武汉华星光电半导体显示技术有限公司 | Oled packaging structure and display panel |
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Application publication date: 20120725 |