CN102615571A - Polishing device and polishing method - Google Patents
Polishing device and polishing method Download PDFInfo
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- CN102615571A CN102615571A CN2011100305398A CN201110030539A CN102615571A CN 102615571 A CN102615571 A CN 102615571A CN 2011100305398 A CN2011100305398 A CN 2011100305398A CN 201110030539 A CN201110030539 A CN 201110030539A CN 102615571 A CN102615571 A CN 102615571A
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- polishing pad
- grinding table
- burnishing device
- polishing
- sand belt
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Abstract
The invention provides a polishing device which comprises a polishing head and a grinding table, and further comprises a fixed abrasive polishing tape, a feeding scroll, a picking scroll, a first guiding part and a second guiding part. The polishing device is simple to operate, and adopts FA (fixed abrasive) polishing mats made of different materials and arranged alternatively; the polishing tape is driven by the scrolls to achieve the replacement and the updating of the FA polishing mats; one polishing tape can be used for the polishing process of different batches of fixed abrasives, and is suitable for polishing processes of a shallow trench isolation (STI) structure, an interlayer dielectric (ILD), Cu and W, and a high-K metal gate (HKMG) electrode, the stability of various polishing processes is enhanced, higher thickness uniformity of WIW, WID and WTW is obtained, the process cost is further lowered and the process efficiency is improved.
Description
Technical field
The present invention relates to the chemical Mechanical Polishing Technique field, relate in particular to a kind of burnishing device and method.
Background technology
In semi-conductor industry; Usually utilize polysilicon gate to form transistor as electrode; But, polysilicon gate forms the shortcoming of depletion region easily with when work because having with high K medium is incompatible; When the chip of design superior performance, utilize the process of replacing metal gates (RMG) to solve the problem of grid structure defective effect device performance usually.Typical R MG technological process comprises the formation of interim polysilicon gate construction successively; The deposition of inter-level dielectric (ILD) (silica of silicon nitride and top); ILD cmp (CMP) exposes to the open air until the top of interim polysilicon gate fully; Etching is removed polysilicon gate and is formed the grid groove, the work function material deposit in the grid groove, metal level deposition, and the cmp of metal level.Because grid structure is to size; Like very strictness of the THICKNESS CONTROL of (WTW) requirement between (WID) and wafer in (WIW), the chip in the wafer; If lack the process means of the final grinding thickness of strict control, will bring a series of process integration problem, such as: the resistance fluctuation; The grid lack of fill, source/drain electrode exposes to the open air or the like.These problems finally all can be damaged chip performance.In order to ensure the premium properties and the reliability of chip, must the strict thickness of controlling WIW, WID and WTW in the ILD chemical mechanical planarization process.
At present, the grinder station that generally adopts FA (Fixed Abrasive, concretion abrasive) polishing technology to use like Fig. 1 carries out the ILD cmp; To realize strict control WIW; WID, the requirement of the thickness of WTW, this grinder station comprises the rotary slurry abrasive disk 11,13 of a FA abrasive disk 12 and two standards; And the grinding head 14 that can control 5 isolated area pressure, wherein FA abrasive disk 12 is furnished with concretion abrasive spool 120 and FA lapping liquid 121; Slurry abrasive disk 11 is furnished with grinding pad 110, grinding pad reparation brush 112, silica slurry 111; Slurry abrasive disk 13 is furnished with grinding pad 130, grinding pad reparation brush 132, special-purpose slurry 131.Use this grinder station ILD carried out FA CMP process shown in Fig. 2 A to 2C:
The first step (like Fig. 2 A) adopts slurry abrasive disk 11 to grind and removes most ILD silica 203, makes the ILD silicon oxide surface drop to position shown in the solid line from the position shown in the dotted line;
Second step (like Fig. 2 B), adopt FA abrasive disk 12 to continue to grind, stop at silicon nitride layer 202;
The 3rd step (like Fig. 2 C), adopt slurry abrasive disk 13 thoroughly to grind off silicon nitride layer 202, expose polysilicon gate 201 fully to the open air.
The complex structure of above-mentioned grinder station, polishing process is loaded down with trivial details, and because common polishing pad, and promptly the be far from polishing effect of FA polishing pad of the grinding pad 110,130 in the slurry abrasive disk 11,13 is good; Thereby the application of above-mentioned grinder station polishing pad 110,130 limited the WIW of polishing, WID, and the raising of the thickness evenness of WTW is unfavorable for the manufacturing of high performance chips; Therefore, need be a kind of simple in structure, the CMP polishing performance is high; WIW, WID, the grinder station that the thickness evenness of WTW is higher.
Summary of the invention
The object of the present invention is to provide a kind of burnishing device, simple in structure, obtain higher CMP polishing performance.
For addressing the above problem, the present invention proposes a kind of burnishing device, comprises rubbing head and grinding table, also comprises:
The concretion abrasive sand belt is the banded structure that the first material polishing pad and the second material polishing pad are alternately arranged;
Supply spool with pick up spool, lay respectively at the two ends of grinding table, said concretion abrasive sand belt is wound in supply spool and picks up on the spool, and moves at supply spool and the effect lower edge grinding table that picks up spool
Further, said concretion abrasive sand belt contains at least a in diamond, silica, ceria, aluminium oxide, carborundum, boron carbide and the zirconia.
Further, all density and highly adjusting of the concretion abrasive piece through making this polishing pad of the hardness of the hardness of the said first material polishing pad and the said second material polishing pad.
Further, the hardness of the first material polishing pad is higher than the hardness of the said second material polishing pad.
Further, said grinding table is square or rectangle, the width coupling of width and said concretion abrasive sand belt.
Further, said concretion abrasive sand belt rotates with said grinding table in polishing process and keeps static relatively.
Further, said rubbing head said relatively concretion abrasive sand belt translation in polishing process.
Further, said burnishing device also comprises:
First targeting part between said supply spool and grinding table, is used for the said concretion abrasive sand belt from said supply spool is led to said grinding table;
Second targeting part at said grinding table and pick up between the spool, is used for the said concretion abrasive sand belt from said grinding table is led to the said spool that picks up.
Further, said first targeting part and the: targeting part is respectively a step guiding or a multistep guide frame.
According to another side of the present invention, a kind of finishing method of using above-mentioned burnishing device is provided, it is characterized in that, comprising:
Wafer is provided, adopts the said first material polishing pad that said wafer is carried out the first time and grind;
Adopt the said second material polishing pad to continue to grind said wafer, until to the polishing of accomplishing said wafer;
To roll forward with the said concretion abrasive sand belt of crossing, the first material polishing pad that replacement makes new advances is for next glossing is prepared.
Further, after grinding the said first time, will roll forward with the said first material polishing pad of crossing, extremely the said second material polishing pad places under the rubbing head.
Further, the polishing of said wafer comprises shallow groove isolation structure STI, inter-level dielectric ILD, Cu, W, the polishing of high-K metal grid.
Compared with prior art, burnishing device of the present invention, the FA polishing pad that adopts unlike material alternately to arrange; Drive replacement and the renewal that sand belt has been realized the FA polishing pad through spool, a sand belt can be used for the glossing of different batches, is applicable to shallow groove isolation structure STI; Inter-level dielectric ILD; Cu, W, high-K metal grid various glossings such as (HKMG); Strengthen the stability of various glossings, obtained higher WIW, WID, the thickness evenness of WTW further reduces the technology cost, improves process efficiency.
Description of drawings
Fig. 1 is a kind of grinder station structural representation of prior art;
Fig. 2 A to 2C is a kind of glossing sketch map under the prior art;
Fig. 3 is a burnishing device structural representation of the present invention;
Fig. 4 is the structural representation of concretion abrasive sand belt of the present invention;
Fig. 5 A to 5B is a glossing sketch map of using burnishing device of the present invention.
The specific embodiment
Below in conjunction with accompanying drawing and specific embodiment burnishing device and method that the present invention proposes are done further explain.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much, only is used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
As shown in Figure 3, a kind of burnishing device of the present invention comprises rubbing head 301 and grinding table 300, concretion abrasive sand belt 302, and supply spool 303 picks up spool 304, the first targeting parts 305 and second targeting part 306.
Wherein, said grinding table 300 is square or rectangle, the width coupling of width and said concretion abrasive sand belt 302;
Concretion abrasive sand belt 302; It is the banded structure (like Fig. 4) that the first material polishing pad 3021 and the second material polishing pad 3022 are alternately arranged; Said concretion abrasive sand belt 302 of the present invention contains at least a in diamond, silica, ceria, aluminium oxide, carborundum, boron carbide and the zirconia; Concrete selection mode is according to the hardness requirement of the first material polishing pad 3021 and the second material polishing pad 3022 and the object decision of required polishing, and the hardness of the hardness of the said first material polishing pad and the said second material polishing pad is the density and the highly adjusting of the concretion abrasive piece through making this polishing pad all.Make burnishing device of the present invention be applicable to shallow groove isolation structure STI, inter-level dielectric ILD, Cu, W, high-K metal grid various glossings such as (HKMG).In the present embodiment; The said first material polishing pad 3021 is relative harder polishing pad; Hardness is preferably 30～60HRC, is applicable to the polishing like bulk matter layers such as wafer ILD silicon oxide layers, and the said second material polishing pad 3022 is relative softer polishing pad; Hardness is 10～30HRC, is applicable to the polishing like other dielectric layers of wafer ILD silicon nitride layer etc.
Supply spool 303 is positioned at an end of grinding table 300, is used for supplying to said grinding table 300 to said concretion abrasive sand belt 302;
Pick up spool 304, be positioned at the other end of grinding table 300, be used to twine said concretion abrasive sand belt 302 from said grinding table 300;
In the present embodiment, supply spool 303 is positioned at the end top of grinding table 300, can prevent that polishing fluid from spattering leakage, and gives said grinding table 300 through first targeting part 305 with concretion abrasive sand belt 302 guiding; Pick up spool 304 and be positioned at the other end below of grinding table 300,, will give the said spool 304 that picks up from said concretion abrasive sand belt 302 guiding of said grinding table 300 through second targeting part 306.Said first targeting part 305 and second targeting part 306 can be respectively a step guiding or a multistep guide frame; The multistep guide frame can repeatedly lead; Make that the direction of concretion abrasive sand belt 302 is more accurate; And then the concretion abrasive sand belt 302 that makes supply spool the supply with grinding table 300 of more fitting, perhaps, picking up spool 303, to roll the concretion abrasive sand belt of using 302 faster.
Please refer to Fig. 3,4,5A to 5B; According to another side of the present invention, a kind of finishing method of using above-mentioned burnishing device is provided, in the present embodiment; (ILD) is finished to example with the chip layer medium, and said wafer comprises substrate 500 from bottom to top, polysilicon gate 501; And the ILD that forms by silicon nitride layer 502 and silicon oxide layer 503, this method comprises the steps:
The first step adopts the said first material polishing pad 3021 to grind the silicon oxide layer 503 that removes silicon nitride layer 502 tops, promptly removes the part 503a shown in the dotted line among the figure.
Before the polishing, rubbing head 301 is fixed in downwards in wafer silicon oxide layer 503 surfaces; Through supply spool 303 with pick up the spool 304 and first targeting part 305, second targeting part, 306 cooperative cooperatings, the first material polishing pad 3021 is placed rubbing head 301 times, and covers rubbing head 301 movings range.In the polishing process, the said first material polishing pad 3021 is static relatively with grinding table 300, and rotates together, and rubbing head 301 carries fixing said wafer, and is pressed in translation relatively on the first material polishing pad 3021, to accomplish the polishing of silicon oxide layer 503.Comparison diagram 2A and 5A, difference is: when adopting the first material polishing pad 3021 directly to silicon oxide layer 503 polishings, can remove the silicon oxide layer 503a of silicon nitride layer 502 tops a step, polishing efficiency improves.
Second step, adopt the said second material polishing pad 3022 to continue to grind, remove said silicon nitride layer 502, expose polysilicon gate 501 fully to the open air.
Please refer to Fig. 5 B, the rubbing head 301 that carries said wafer is moved to the second material polishing pad 3022, accomplish said silicon nitride layer 502.The hardness of the second material polishing pad 3022 is moderate, makes that the glossing that removes said silicon nitride layer 502 is stable, and polishing effect is good, has obtained higher WIW, WID, the thickness evenness of WTW.
The 3rd step, will roll forward with the said concretion abrasive sand belt of crossing, the first material polishing pad that replacement makes new advances is for next glossing is prepared.
In the present embodiment, the grinding table 300 and the first material polishing pad 3021 and the second material polishing pad, 3022 length sums coupling please refer to Fig. 3; So when carrying out second step; Keep concretion abrasive sand belt 302 constant with the relative position of grinding table, only mobile rubbing head 301 gets final product, after this wafer polishing is accomplished; Supply spool 303, first targeting part 305, second targeting part 306 and pick up spool 304 cooperative cooperatings; The said concretion abrasive sand belt 302 that to use is rolled up forward, to the new first material polishing pad 3021 as for rubbing head 301 times, carry out the polishing of a new round.
In other specific embodiments; Between first and second steps; Design according to grinding table 300 and the first material polishing pad 3021 and the second material polishing pad, 3022 length; If when grinding table 300 and the first material polishing pad, 3021 length or the second material polishing pad, 3022 length coupling, will roll forward with the said first material polishing pad of crossing 3021, extremely the said second material polishing pad places under the rubbing head.After third step is accomplished; Again through supply spool 303 with pick up the spool 304 and first targeting part 305, second targeting part, 306 cooperative cooperatings; To roll forward with the second material polishing pad of crossing 3022; The first new material polishing pad 3021 is directed on the grinding table 300, and places rubbing head 301 times, for next glossing is prepared.
In sum, burnishing device of the present invention, the FA polishing pad that adopts unlike material alternately to arrange; Drive replacement and the renewal that sand belt has been realized the FA polishing pad through spool, a sand belt can be used for the glossing of different batches, is applicable to shallow groove isolation structure STI; Inter-level dielectric ILD; Cu, W, high-K metal grid various glossings such as (HKMG); Strengthen the stability of various glossings, obtained higher WIW, WID, the thickness evenness of WTW further reduces the technology cost, improves process efficiency.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (12)
1. a burnishing device comprises rubbing head and grinding table, it is characterized in that, also comprises:
The concretion abrasive sand belt is the banded structure that the first material polishing pad and the second material polishing pad are alternately arranged;
Supply spool with pick up spool, lay respectively at the two ends of grinding table, said concretion abrasive sand belt is wound in supply spool and picks up on the spool, and moves at supply spool and the effect lower edge grinding table that picks up spool.
2. burnishing device as claimed in claim 1 is characterized in that, said concretion abrasive sand belt contains at least a in diamond, silica, ceria, aluminium oxide, carborundum, boron carbide and the zirconia.
3. burnishing device as claimed in claim 1 is characterized in that, the hardness of the hardness of the said first material polishing pad and the said second material polishing pad is through the density of the concretion abrasive of this polishing pad of making and highly adjusting.
4. burnishing device as claimed in claim 3 is characterized in that the hardness of the first material polishing pad is higher than the hardness of the said second material polishing pad.
5. burnishing device as claimed in claim 1 is characterized in that, said grinding table is square or rectangle, the width coupling of width and said concretion abrasive sand belt.
6. burnishing device as claimed in claim 1 is characterized in that, said concretion abrasive sand belt rotates with said grinding table in polishing process and keeps static relatively with grinding table.
7. burnishing device as claimed in claim 1 is characterized in that, said rubbing head is the translation of said relatively concretion abrasive sand belt in polishing process.
8. burnishing device as claimed in claim 1 is characterized in that, said burnishing device also comprises:
First targeting part between said supply spool and grinding table, is used for the said concretion abrasive sand belt from said supply spool is led to said grinding table;
Second targeting part at said grinding table and pick up between the spool, is used for the said concretion abrasive sand belt from said grinding table is led to the said spool that picks up.
9. burnishing device as claimed in claim 8 is characterized in that, said first targeting part and second targeting part are respectively a step guiding or a multistep guide frame.
10. a finishing method of using burnishing device as claimed in claim 1 is characterized in that, comprising:
Wafer is provided, adopts the said first material polishing pad that said wafer is ground for the first time;
Adopt the said second material polishing pad to continue to grind said wafer, until the polishing of accomplishing said wafer;
To roll forward with the said concretion abrasive sand belt of crossing, the first material polishing pad that replacement makes new advances is for next glossing is prepared.
11. finishing method as claimed in claim 10 is characterized in that, after grinding the said first time, will roll forward with the said first material polishing pad of crossing, extremely the said second material polishing pad places under the rubbing head.
12. finishing method as claimed in claim 10 is characterized in that, said finishing method comprises the shallow groove isolation structure STI on the wafer, inter-level dielectric ILD, Cu, W, the polishing of high-K metal grid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100305398A CN102615571A (en) | 2011-01-28 | 2011-01-28 | Polishing device and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100305398A CN102615571A (en) | 2011-01-28 | 2011-01-28 | Polishing device and polishing method |
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| CN102615571A true CN102615571A (en) | 2012-08-01 |
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| CN2011100305398A Pending CN102615571A (en) | 2011-01-28 | 2011-01-28 | Polishing device and polishing method |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55135328A (en) * | 1979-04-11 | 1980-10-22 | Fujitsu Ltd | Lapping device for magnetic head |
| JPS6451265A (en) * | 1987-08-20 | 1989-02-27 | Kobe Steel Ltd | Block polishing method for driving belt for continuously variable transmission |
| JPH08118241A (en) * | 1994-10-19 | 1996-05-14 | Sony Corp | Polishing tape |
| US6261168B1 (en) * | 1999-05-21 | 2001-07-17 | Lam Research Corporation | Chemical mechanical planarization or polishing pad with sections having varied groove patterns |
| US20010041508A1 (en) * | 1999-07-20 | 2001-11-15 | Sabde Gundu M. | Method and apparatuses for planarizing microelectronic substrate assemblies |
| US6428394B1 (en) * | 2000-03-31 | 2002-08-06 | Lam Research Corporation | Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed |
| US6439978B1 (en) * | 2000-09-07 | 2002-08-27 | Oliver Design, Inc. | Substrate polishing system using roll-to-roll fixed abrasive |
| US6746320B2 (en) * | 2000-06-30 | 2004-06-08 | Lam Research Corporation | Linear reciprocating disposable belt polishing method and apparatus |
-
2011
- 2011-01-28 CN CN2011100305398A patent/CN102615571A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55135328A (en) * | 1979-04-11 | 1980-10-22 | Fujitsu Ltd | Lapping device for magnetic head |
| JPS6451265A (en) * | 1987-08-20 | 1989-02-27 | Kobe Steel Ltd | Block polishing method for driving belt for continuously variable transmission |
| JPH08118241A (en) * | 1994-10-19 | 1996-05-14 | Sony Corp | Polishing tape |
| US6261168B1 (en) * | 1999-05-21 | 2001-07-17 | Lam Research Corporation | Chemical mechanical planarization or polishing pad with sections having varied groove patterns |
| US20010041508A1 (en) * | 1999-07-20 | 2001-11-15 | Sabde Gundu M. | Method and apparatuses for planarizing microelectronic substrate assemblies |
| US6428394B1 (en) * | 2000-03-31 | 2002-08-06 | Lam Research Corporation | Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed |
| US6746320B2 (en) * | 2000-06-30 | 2004-06-08 | Lam Research Corporation | Linear reciprocating disposable belt polishing method and apparatus |
| US6439978B1 (en) * | 2000-09-07 | 2002-08-27 | Oliver Design, Inc. | Substrate polishing system using roll-to-roll fixed abrasive |
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Application publication date: 20120801 |