CN102637732B - Insulated gate bipolar transistor - Google Patents
Insulated gate bipolar transistor Download PDFInfo
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- CN102637732B CN102637732B CN201210093721.2A CN201210093721A CN102637732B CN 102637732 B CN102637732 B CN 102637732B CN 201210093721 A CN201210093721 A CN 201210093721A CN 102637732 B CN102637732 B CN 102637732B
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- gate bipolar
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Abstract
Insulated gate bipolar transistor of the invention includes：Colelctor electrode, drift region, buffering area, emitter stage and grid；First PN junction is formd between wherein described launch site and the drift region, second PN junction is formd between drift region and the collecting zone, the 3rd PN junction is formd between the launch site and the source region of the field-effect transistor；Collecting zone includes：First doped region, the second doped region and the 3rd transoid doped region；Wherein, first doped region and second doped region have the first doping type, and first doped region doping concentration of the doping concentration more than second doped region, the 3rd transoid doped region has the second doping type；Also, the drift region and the 3rd transoid doped region are arranged in the opposite sides of second doped region, the drift region and the 3rd transoid doped region are not contacted；First doped region, second doped region and the 3rd transoid doped region are adjacent to each other two-by-two.
Description
Technical field
The present invention relates to semiconductor manufacturing and design field, it is more particularly related to a kind of insulated gate bipolar
The manufacture of transistor.
Background technology
Insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor) is field effect transistor
The product that pipe (MOSFET) and bipolar transistor (BJT) are combined.Its main part is identical with BJT, also there is colelctor electrode and hair
Emitter-base bandgap grading, and the structure of control pole is identical with MOSFET, is insulated gate structure, also referred to as grid.Insulated gate bipolar transistor
Have the high input impedance of MOS transistor and advantage of both the low conduction voltage drop of BJT concurrently.
Fig. 1 schematically shows the structure of the insulated gate bipolar transistor according to prior art.As shown in figure 1, one
As, insulated gate bipolar transistor include emitter stage 1 (e.g. p-type launch site), colelctor electrode 2 (such as p-type collecting zone) and
Grid 5；Wherein, drift region 3 (e.g. N-type drift region) and buffering area 4 are arranged between emitter stage 1 and colelctor electrode 2.
(i.e. n-type doping concentration is adulterated dense equal to p-type to there is first PN junction between p-type emitter stage 1 and N-type drift region 3
Degree), there is second PN junction between N-type drift region 3 and p-type collecting zone 2；Exist between p-type emitter stage 1 and the source electrode of MOSFET
3rd PN junction.
Breakdown voltage (Breakdown Voltage, BV) is an important electrical parameter of insulated gate bipolar transistor.
Specifically, the definition of breakdown voltage is：Substrate bottom add positive voltage by 0 it is paramount be scanned, the electricity when current multiplication
(electric current commonly reaches 1e-5A/cm to pressure value2), that is, be referred to as the breakdown voltage of the device, wherein when substrate adds positive voltage, most under
First PN junction forward conduction at end, and second PN junction from the bottom to top reversely exhausts, in fact insulated gate bipolar transistor
Breakdown voltage be second breakdown reverse voltage of PN junction.
But, the insulated gate bipolar transistor of prior art cannot ensure the breakdown voltage BV characteristics of OFF state and lead
Logical drooping characteristic has switch speed quickly in the case of will not degenerating.Accordingly, it is desirable to provide a kind of can ensure OFF state
Breakdown voltage BV characteristics and conduction voltage drop characteristic improve the insulated gate bipolar crystal of switch speed in the case of will not degenerating
Pipe.
The content of the invention
The technical problems to be solved by the invention are directed to and there is drawbacks described above in the prior art, there is provided one kind can protected
The breakdown voltage BV characteristics and conduction voltage drop characteristic of card OFF state improve the insulated gate bipolar of switch speed in the case of will not degenerating
Transistor npn npn.
According to the present invention, there is provided a kind of insulated gate bipolar transistor, it includes：Colelctor electrode, drift region, buffering area,
Emitter stage and grid；First PN junction, the drift region and institute are formd between wherein described launch site and the drift region
State and form second PN junction between collecting zone, the 3rd PN junction is formd between the launch site and the grid；Its feature
It is that the launch site includes the first doped region, the second doped region and the 3rd transoid doped region；Wherein, first doping
Area and second doped region have the first doping type, and the doping concentration of first doped region is mixed more than described second
The doping concentration in miscellaneous area, the 3rd transoid doped region has the second doping type；And wherein, the drift region and described
Three transoid doped regions are arranged in the opposite sides of second doped region, and the drift region and the 3rd transoid doped region
Do not contact；Additionally, first doped region, second doped region and the 3rd transoid doped region are adjacent to each other two-by-two.
Preferably, the colelctor electrode is p-type colelctor electrode；The drift region is N-type drift region；The emitter stage is p-type collection
Emitter stage.
Preferably, the boron that concentration is 1e19 is doped with the collecting zone to adulterate.
In insulated gate bipolar transistor of the invention, due to collecting zone in the first doped region, second doping
Area and the presence of the 3rd transoid doping plot structure, the electronics in forcibly can attracting drift region in procedures of turn-off, so
Switch speed of the above-mentioned insulated gate bipolar transistor by ON state to OFF state can be improved.
Brief description of the drawings
With reference to accompanying drawing, and by reference to following detailed description, it will more easily have more complete understanding to the present invention
And its adjoint advantages and features is more easily understood, wherein：
Fig. 1 schematically shows the structure of the insulated gate bipolar transistor according to prior art.
Fig. 2 schematically shows the structure of insulated gate bipolar transistor according to embodiments of the present invention.
Fig. 3 schematically shows the test circuit of insulated gate bipolar transistor according to embodiments of the present invention.
Fig. 4 schematically shows to the insulated gate bipolar transistor according to prior art and is implemented according to the present invention
The simulation test result of the insulated gate bipolar transistor of example.
It should be noted that accompanying drawing is used to illustrate the present invention, it is not intended to limit the present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.Also, in accompanying drawing, same or similar element indicates same or similar label.
Specific embodiment
In order that present disclosure is more clear and understandable, with reference to specific embodiments and the drawings to of the invention interior
Appearance is described in detail.
Fig. 2 schematically shows the structure of insulated gate bipolar transistor according to embodiments of the present invention.
As shown in Fig. 2 insulated gate bipolar transistor according to embodiments of the present invention equally includes：Emitter stage 1 is (e.g.
P-type launch site), colelctor electrode 2 (such as p-type collecting zone, such as concentration adulterate for the boron of 1e19) and grid 5；Wherein, emitter stage
Drift region 3 (e.g. N-type drift region) and buffering area are arranged between 1 and colelctor electrode 2.
First PN junction is formd between launch site 1 and drift region 3 (for example, n-type doping concentration is dense equal to p-type doping
Degree), second PN junction is formd between drift region 3 and collecting zone 2；The 3rd is formd between launch site 1 and the source region of MOSFET
Individual PN junction.
But, unlike the prior art shown in Fig. 1, in the prior art, collecting zone 2 is one shown in Fig. 1
The doped layer of Uniform Doped, for example, be doping to the buffering area 2 of p-type；Conversely, insulated gate bipolar according to embodiments of the present invention is brilliant
The collecting zone 2 of body pipe includes：First doped region 23, the second doped region 21 and the 3rd transoid doped region 22.
Wherein, the first doped region 23 and the second doped region 21 are normal colelctor electrode doped regions, and the 3rd transoid is adulterated
Area 22 is the doping type opposite with the first doped region 23 and the second doped region 21, for example, for colelctor electrode be p-type colelctor electrode,
Drift region is that N-type drift region, emitter stage are the situations of p-type emitter stage, and the first doped region 23 and the second doped region 21 are p-type doping
, the 3rd transoid doped region 22 is n-type doping.
In fact, the 3rd transoid doped region 22 can be used as the sun of insulated gate bipolar transistor according to embodiments of the present invention
Pole.
The transoid doped region 22 of drift region 3 and the 3rd is arranged in the opposite sides of the second doped region 21, and drift region 3 and
Three transoid doped regions 22 are not contacted.Additionally, the first doped region 23, the second doped region 21 and the 3rd transoid doped region 22 two-by-two that
This adjoining.
Also, the doping concentration of the first doped region 23 is more than the doping concentration of the second doped region 21.
In above-mentioned insulated gate bipolar transistor, due to collecting zone in the first doped region 23, the second doped region 21 with
And the presence of the structure of the 3rd transoid doped region 22, the electronics in forcibly can attracting drift region in procedures of turn-off, so can
To improve switch speed of the above-mentioned insulated gate bipolar transistor by ON state to OFF state.
Further, can be to the insulated gate bipolar transistor according to prior art and according to embodiments of the present invention exhausted
Edge grid bipolar transistor is simulated test.Fig. 3 schematically shows insulated gate bipolar according to embodiments of the present invention
The simulation test circuit of transistor.
As shown in figure 3, applied voltage scope is the grid voltage of 0V to 10V on the grid 5 of insulated gate bipolar transistor
Vg, emitter stage 1 is grounded, and colelctor electrode 2 is connected to the collecting voltage Vc that voltage swing is 200V by resistance R1.
Fig. 4 schematically shows brilliant to the insulated gate bipolar according to prior art using the test circuit shown in Fig. 3
The simulation test result of body pipe and insulated gate bipolar transistor according to embodiments of the present invention.Wherein, when abscissa is represented
Between, ordinate represents the electric current for flowing through insulated gate bipolar transistor.
First curve C1 therein shows the characteristic of the insulated gate bipolar transistor according to prior art.Therein
Two curve C2 and the 3rd curve C3 adulterate in showing the launch site of insulated gate bipolar transistor according to embodiments of the present invention
Concentration for 1e19 it is boron doped in the case of characteristic.Wherein, the second curve C2 shows that the thickness of the second doped region 21 is
1.0 microns of situation, the 3rd curve C3 shows a case that the thickness of the second doped region 21 is 0.7 micron.
As shown in figure 4, as shown in the afterbody of curve, by measurement, it is known that insulated gate bipolar according to embodiments of the present invention
Transistor npn npn improves nearly 65% by the handoff loss of ON state to OFF state.
On the other hand, by simulation test, the conduction voltage drop of insulated gate bipolar transistor according to embodiments of the present invention
Do not failed compared with the insulated gate bipolar transistor according to prior art with breakdown voltage.
Although it is understood that the present invention is disclosed as above with preferred embodiment, but above-described embodiment and being not used to
Limit the present invention.For any those of ordinary skill in the art, in the case where technical solution of the present invention ambit is not departed from,
Many possible variations and modification are all made to technical solution of the present invention using the technology contents of the disclosure above, or is revised as
With the Equivalent embodiments of change.Therefore, every content without departing from technical solution of the present invention, according to technical spirit pair of the invention
Any simple modification, equivalent variation and modification made for any of the above embodiments, still fall within the scope of technical solution of the present invention protection
It is interior.
Claims (3)
1. a kind of insulated gate bipolar transistor, it includes：Collecting zone, drift region, buffering area, body area and grid；Wherein institute
First PN junction is formd between Shu Ti areas and the drift region, second is formd between the drift region and the collecting zone
PN junction, forms the 3rd PN junction between the body area and the launch site of the insulated gate bipolar transistor；Characterized in that,
The collecting zone includes the first doped region, the second doped region and the 3rd transoid doped region；Wherein, first doped region and institute
The second doped region is stated with the first doping type, and the doping concentration of first doped region is more than second doped region
Doping concentration, the 3rd transoid doped region has the second doping type；And wherein, the drift region and the 3rd transoid
Doped region is arranged in the opposite sides of second doped region, and the drift region and the 3rd transoid doped region do not connect
Touch；Additionally, first doped region, second doped region and the 3rd transoid doped region are adjacent to each other two-by-two, it is described
First doped region, second doped region contact the buffering area, and the thickness of second doped region is 0.7 micron or 1.0
Micron.
2. insulated gate bipolar transistor according to claim 1, it is characterised in that the collecting zone is p-type collecting zone；
The drift region is N-type drift region；The ShiPXing Ti areas of body area.
3. insulated gate bipolar transistor according to claim 1 and 2, it is characterised in that be doped with the collecting zone
Concentration is adulterated for the boron of 1e19.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210093721.2A CN102637732B (en) | 2012-03-31 | 2012-03-31 | Insulated gate bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210093721.2A CN102637732B (en) | 2012-03-31 | 2012-03-31 | Insulated gate bipolar transistor |
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| Publication Number | Publication Date |
|---|---|
| CN102637732A CN102637732A (en) | 2012-08-15 |
| CN102637732B true CN102637732B (en) | 2017-06-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210093721.2A Active CN102637732B (en) | 2012-03-31 | 2012-03-31 | Insulated gate bipolar transistor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5360984A (en) * | 1991-11-29 | 1994-11-01 | Fuji Electric Co., Ltd. | IGBT with freewheeling diode |
| US7250639B1 (en) * | 2001-07-17 | 2007-07-31 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor |
| CN101887913A (en) * | 2010-06-04 | 2010-11-17 | 无锡新洁能功率半导体有限公司 | IGBT with improved collector structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8564097B2 (en) * | 2010-04-15 | 2013-10-22 | Sinopower Semiconductor, Inc. | Reverse conducting IGBT |
-
2012
- 2012-03-31 CN CN201210093721.2A patent/CN102637732B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5360984A (en) * | 1991-11-29 | 1994-11-01 | Fuji Electric Co., Ltd. | IGBT with freewheeling diode |
| US7250639B1 (en) * | 2001-07-17 | 2007-07-31 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor |
| CN101887913A (en) * | 2010-06-04 | 2010-11-17 | 无锡新洁能功率半导体有限公司 | IGBT with improved collector structure |
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| Publication number | Publication date |
|---|---|
| CN102637732A (en) | 2012-08-15 |
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