CN102709175A - Forming method of photoresist layer in deep groove process - Google Patents
Forming method of photoresist layer in deep groove process Download PDFInfo
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- CN102709175A CN102709175A CN2012101625237A CN201210162523A CN102709175A CN 102709175 A CN102709175 A CN 102709175A CN 2012101625237 A CN2012101625237 A CN 2012101625237A CN 201210162523 A CN201210162523 A CN 201210162523A CN 102709175 A CN102709175 A CN 102709175A
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Abstract
The invention relates to a forming method of a photoresist layer in a deep groove process, which comprises the following steps of: providing a wafer; forming the photoresist layer on the wafer by a spin coating process, and simultaneously, removing the photoresist layer in a certain width at the edge of the wafer by an edge-removing solution, wherein the removed width of the photoresist layer is 1.7-1.9mm; and carrying out exposure and development to the photoresist layer to form a patterned photoresist layer. The edge thickness and the shape uniformity of the photoresist layer are improved.
Description
Technical field
The present invention relates to field of semiconductor fabrication, the formation method of photoresist layer in particularly a kind of deep trench processes.
Background technology
Along with the continuous progress of ic manufacturing process, constantly the reducing of live width, semi-conductive layout develops into the integrated circuit of integrating high-density multifunction also from common simple function discrete device.
In semiconductor fabrication process, photoetching is one of them very important step.Photoetching process is that the pattern on the mask plate is copied to crystal column surface, and its detailed process is: adopt spin coating proceeding on wafer, to form photoresist layer; This photoresist layer heat-treated be placed in the exposure sources, through exposure technology to said photoresist layer is made public, with the design transfer on the mask plate in photoresist layer; Develop then to the after-baking that makes public of the photoresist layer after the exposure, and through developing process, in photoresist, form photoengraving pattern.
When adopting spin coating proceeding on wafer, to form photoresist layer, form the residual of photoresist material at the crystal round fringes and the back side easily, the residual meeting contamination equipment of photoresist material influences follow-up exposure technology, brings the defective of particle.
In order to overcome the problems referred to above; Existing method (the EBR that adopts the edge to remove photoresist usually; Edge Bead Removal) and the method that combines of the method for edge exposure (WEE, Wafer Edge Exposure) remove the residual of crystal round fringes and back side formation photoresist material.
Wherein, the method that the edge removes photoresist (EBR) is: when adopting spin coating proceeding on wafer, to form photoresist layer, adopt the photoresist material at the trimming removal of solvents crystal round fringes and the back side.The method of edge exposure (WEE) is: adopt laser that the photoresist material of crystal round fringes is made public, the photoresist material that crystal round fringes is made public is removed when developing.The method that the method for edge exposure is removed photoresist compared to the edge has higher precision and edge pattern preferably; Along with node technology develops to the sub-micron direction; Method (the EBR that adopts the edge to remove photoresist; Edge Bead Removal) and the method that combines of the method for edge exposure (WEE, Wafer Edge Exposure) remove that crystal round fringes and the back side forms the photoresist material residual being widely used in the semi-conductive manufacturing process, but adopt the photoresist layer of said method processing to form defective easily on the edge of; When with said photoresist layer being mask etching wafer formation deep trench, be prone to form on the edge of the defective of silicon grain.
More formation methods about photoresist layer please refer to the Chinese patent that publication number is CN 102169292 A.
Summary of the invention
The problem that the present invention solves provides the formation method of photoresist layer in a kind of deep trench processes, reduces the defective of crystal round fringes photoresist layer.
For addressing the above problem, the formation method of photoresist layer is characterized in that in a kind of deep trench processes of the present invention, comprising:
Wafer is provided;
On said wafer, adopt spin coating proceeding to form photoresist layer, adopt the photoresist layer of trimming removal of solvents crystal round fringes partial width simultaneously, the removal width of said photoresist layer is 1.7 ~ 1.9 millimeters;
To said photoresist layer make public with developing process form patterned photoresist layer.
Optional, the range of flow of said trimming solvent is 10 ~ 20 ml/min.
Optional, during the photoresist layer of said employing trimming removal of solvents crystal round fringes partial width, the injection direction line of trimming solvent and the angular range of crystal column surface are 40 ~ 60 degree.
Optional, the projection line of injection direction line on wafer of said trimming solvent is parallel with the tangent line at the edge of wafer.
Optional, the material of said photoresist layer is a deep ultraviolet light-sensitive lacquer.
Optional, said photoresist layer thickness is 4500 ~ 5500 dusts.
Optional, the temperature of chamber is 21 ~ 23 degree during said spin coating proceeding, and relative humidity is 40% ~ 50%.
Optional, the pressure of the following air draft of chamber is 40 ~ 60 handkerchiefs during said spin coating proceeding.
Optional, said trimming solvent is an organic solvent.
Optional, after the employing spin coating proceeding forms photoresist layer, also comprise: said wafer is carried out the gluing after-baking.
Optional, the temperature of said gluing after-baking is 70 ~ 180 degrees centigrade, the time is 20 ~ 200 seconds.
Optional, also comprise: with said patterned photoresist layer is mask, the said wafer of etching forms deep trench.
Compared with prior art, technical scheme of the present invention has the following advantages:
After adopting the photoresist layer of trimming removal of solvents crystal round fringes partial width; Need not carry out the processing of edge exposure to the photoresist layer of crystal round fringes; Avoid occurring the phenomenon of light leak, improved the uniformity of thickness of the photoresist layer of crystal round fringes, the removal width of said photoresist layer is 1.7 ~ 1.9 millimeters; When removing the bad part photoresist of edge uniformity, guaranteed the utilance of wafer.
The range of flow of said trimming solvent is 10 ~ 20 ml/min; The injection direction line of trimming solvent and the angular range of crystal column surface are 40 ~ 60 degree; And the projection line of injection direction line on wafer of said trimming solvent is parallel with the tangent line at the edge of wafer; The trimming solvent is oblique tangently contacts with the photoresist material of photoresist layer, reduced the impulsive force of trimming solvent to the photoresist material, reduced the photoresist material along on the direction of rotation to the resistance of trimming solution; Make the photoresist edge of removing behind the partial width have pattern preferably; And can not cause in the removal process cross the removing of photoresist layer edge, make the edge thickness of removing the photoresist layer behind the partial width keep uniformity, the follow-up edge exposure technology that need not adopt is revised the edge of photoresist layer; Avoid the generation of light leakage phenomena, saved processing step.
Description of drawings
Fig. 1 is the schematic flow sheet of the formation method of photoresist layer in the embodiment of the invention deep trench processes;
Fig. 2 ~ Fig. 4 is the structural representation of the forming process of photoresist layer in the embodiment of the invention deep trench processes.
Embodiment
The inventor finds that be easy to generate the defective of silicon grain at the edge of wafer, the silicon grain of these generations very easily causes contamination to the semiconductor device that forms on follow-up process apparatus and the wafer in the technology that existing employing photoresist layer is a mask formation deep trench.
The inventor is through discovering; The uniformity of the thickness at the photoresist layer edge that existing technology forms is relatively poor; When graphical photoresist layer, make the photoresist figure of crystal round fringes cross thin or distortion; When with patterned photoresist layer being mask etching wafer substrate formation deep trench, be prone to form the defective of silicon grain at the edge of wafer.The inventor further discovers; The uniformity of the thickness at the edge of the photoresist layer that spin coating proceeding forms on wafer will be worse than the uniformity of the thickness of zone line; And the method that existing edge removes photoresist is to adopt organic solvent to remove the photoresist at edge, when adopting organic solvent to remove the photoresist at edge, because the influence of injecting factors such as angle, flow of organic solvent; Can cause the crossing of edge photoresist layer of wafer to remove, influence the thickness and the pattern of the photoresist layer of crystal round fringes; When the method for edge exposure is made public at the photoresist layer to crystal round fringes, be prone to the phenomenon of light leak, cause overexposure the photoresist layer of crystal round fringes; Influence the thickness and the pattern of the photoresist layer of crystal round fringes; In deep trench processes, with photoresist layer during as mask layer, because bigger variation has taken place for the thickness and the pattern of the photoresist layer at edge; When the marginal portion of wafer forms deep trench; The loss of photoresist layer is bigger, and can not can form the defective of silicon grain at crystal round fringes as normal mask.
For addressing the above problem, the inventor proposes the formation method of photoresist layer in the deep trench processes, behind the photoresist layer of employing trimming removal of solvents crystal round fringes partial width; Need not carry out the processing of edge exposure to the photoresist layer of crystal round fringes; Avoid occurring the phenomenon of light leak, improved the uniformity of thickness of the photoresist layer of crystal round fringes, the removal width of said photoresist layer is 1.7 ~ 1.9 millimeters; When removing the bad part photoresist of edge uniformity, guaranteed the utilance of wafer.
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
With reference to figure 1, Fig. 1 is the schematic flow sheet of the formation method of photoresist layer in the embodiment of the invention deep trench processes, comprising:
Step S201 provides wafer;
Step S202 adopts spin coating proceeding to form photoresist layer on said wafer, adopts the photoresist layer of trimming removal of solvents crystal round fringes partial width simultaneously, and the removal width of said photoresist layer is 1.7 ~ 1.9 millimeters;
Step S203, to said photoresist layer make public with developing process form patterned photoresist layer.
Fig. 2 ~ Fig. 4 is the structural representation of the forming process of photoresist layer in the embodiment of the invention deep trench processes, and Fig. 4 is the cross-sectional view of Fig. 3 along line of cut a-b direction.
With reference to figure 2, wafer 300 is provided.
The material of said wafer 300 is a monocrystalline silicon, and the size of said wafer 300 is more than or equal to 8 inches.
With reference to figure 3 and Fig. 4, on said wafer 300, adopt spin coating proceeding to form photoresist layer 301, adopt the photoresist layer 301 of trimming removal of solvents wafer 300 marginal portion width simultaneously, the removal width of said photoresist layer 301 is 1.7 ~ 1.9 millimeters.
Said spin coating proceeding is in the gluing chamber, to carry out, and in the gluing process, photoresist shower nozzle 10 from photoresist is sprayed onto on wafer 300 center surfaces of rotation, and photoresist is coated to full wafer wafer 300 surfaces under action of centrifugal force.
The material of said photoresist layer 301 is that (Deep Ultraviolet, DUV) photoresist comprise the deep ultraviolet light-sensitive lacquer of 193 nanometers and 248nm nanometer to deep ultraviolet.When exposure, and deep ultraviolet (Deep Ultraviolet, DUV) photoresist can issue biochemical reaction in the irradiation of DUV, and according to the different qualities of photoresist, irradiated photoresist is developed liquid and removes or be not removed when developing.
When forming photoresist layer 301; The pressure and other parameters of air draft is relevant under the humiture of the uniformity of the thickness of photoresist layer 301 and the thickness of photoresist layer, gluing chamber and the gluing chamber, and corresponding parameters can be not distinct simultaneously for the material of photoresist layer 301.
In the embodiment of the invention, the thickness of said photoresist layer 301 is 4500 ~ 5500 dusts, follow-up be when grind forming deep trench with the photoresist layer, guarantee that the thickness of photoresist layer 301 satisfies the requirement of technology.When forming photoresist layer 301, the temperature of chamber is 21 ~ 23 degree during said spin coating proceeding, and relative humidity is 40% ~ 50%; Make photoresist layer 301 integral body of formation have uniformity preferably; The pressure of the following air draft of chamber is 40 ~ 60 handkerchiefs during said spin coating proceeding, makes the thickness at photoresist layer 301 edges of formation suitable with middle thickness, can be too not thick or too thin; When the photoresist of the partial width at follow-up removal edge, make the edge of photoresist layer keep good shapes.
After applying one deck photoresist layer 301 on the wafer 300,, adopt the photoresist layer 301 of trimming removal of solvents wafer 300 marginal portion width for the contamination of the photoresist material that prevents the edge to equipment.Said trimming solution is organic solution; The trimming process is also carried out in the gluing chamber; Behind the photoresist coated materials crystal column surface; Trimming solvent shower nozzle ejection trimming solvent with gluing chamber one side is set to the photoresist material of crystal round fringes, the photoresist material of trimming dissolution with solvents crystal round fringes, the material after dissolved is along with the rotation of wafer throws away crystal column surface.The removal width c of said photoresist layer 301 is 1.7 ~ 1.9 millimeters, when removing the not good photoresist material of edge uniformity, guarantees the utilance of wafer; Promptly can not form semiconductor device in the zone apart from 1.7 ~ 1.9 millimeters width at wafer 300 edges; If the width of removing is wide more, the utilance of wafer is low more, if the width of removing is less; Can make the trimming process be difficult to control; Make the uniformity of pattern and thickness at edge of photoresist layer 301 of final formation relatively poor, when follow-up formation deep trench, form the silicon grain defective at the edge of wafer.
Said trimming solution is organic solvent, and during trimming, the range of flow of said trimming solvent is 10 ~ 20 ml/min; Angle 22 scopes of the injection direction line of trimming solvent and crystal column surface are 40 ~ 60 degree; The injection direction of trimming solvent and the direction of rotation of wafer are in the same way, and the projection line 21 of the injection direction line of said trimming solvent on wafer is parallel with the tangent line at the edge of wafer, and the trimming solvent is oblique tangently contacts with the photoresist material of photoresist layer 301; Reduced the impulsive force of trimming solvent to the photoresist material; Reduced the photoresist material along on the direction of rotation to the resistance of trimming solution, make the photoresist edge of removing behind the partial width have pattern preferably, and can not cause in the removal process crossing of photoresist layer 301 edges removed; Make the edge thickness of removing the photoresist layer 301 behind the partial width keep uniformity; The follow-up edge exposure technology that need not adopt is revised the edge of photoresist layer 301, has avoided the generation of light leakage phenomena, has saved processing step.Need to prove; Injection direction line 20 that said angle 22 is the trimming solvent and the angle of injection direction line 20 between the projection line on the wafer 21, said tangent line are perpendicular to the straight line through the wafer center of circle and trimming solvent ray between the spray site on the wafer.
After adopting spin coating proceeding to form photoresist layer 301, said wafer is carried out the gluing after-baking, remove the partial solvent in the photoresist layer 301, carry out carrying out corresponding cooling processing after the gluing after-baking.
The temperature of said gluing after-baking is 70 ~ 180 degrees centigrade, and the time is 20 ~ 200 seconds.
Then, to said photoresist layer 301 make public with developing process form patterned photoresist layer.Because the edge of the photoresist layer 301 that said method forms has good thickness evenness and edge pattern; Therefore form patterned photoresist layer through overexposure and developing process crystal round fringes and have good thickness evenness and edge pattern; The situation that thickness is too thin or pattern is not good can not appear; Follow-up is that the substrate of mask etching wafer is when forming deep trench with patterned photoresist layer; The patterned photoresist layer of crystal round fringes has good masking effect, can not form the defective of silicon grain at the edge of wafer.
After forming patterned photoresist layer, also comprise: with said patterned photoresist layer is mask, and the said wafer of etching forms deep trench.The degree of depth of said deep trench is greater than 1 micron.
Because the edge of patterned photoresist layer has good thickness evenness and pattern on the wafer 300; In the etching process; Phenomenon such as collapse over etching can not appear or in the photoresist layer of crystal round fringes; The normal etching of the substrate of the wafer at edge when forming deep trench, the defective of silicon grain can not occur at the edge of wafer.
To sum up, the formation method of photoresist layer in the deep trench processes that the embodiment of the invention provides is behind the photoresist layer of employing trimming removal of solvents crystal round fringes partial width; Need not carry out the processing of edge exposure to the photoresist layer of crystal round fringes; Avoid occurring the phenomenon of light leak, improved the uniformity of thickness of the photoresist layer of crystal round fringes, the removal width of said photoresist layer is 1.7 ~ 1.9 millimeters; When removing the bad part photoresist of edge uniformity, guaranteed the utilance of wafer.
The range of flow of said trimming solvent is 10 ~ 20 ml/min; The injection direction line of trimming solvent and the angular range of crystal column surface are 40 ~ 60 degree; And the projection line of injection direction line on wafer of said trimming solvent is parallel with the tangent line at the edge of wafer; The trimming solvent is oblique tangently contacts with the photoresist material of photoresist layer, reduced the impulsive force of trimming solvent to the photoresist material, reduced the photoresist material along on the direction of rotation to the resistance of trimming solution; Make the photoresist edge of removing behind the partial width have pattern preferably; And can not cause in the removal process cross the removing of photoresist layer edge, make the edge thickness of removing the photoresist layer behind the partial width keep uniformity, the follow-up edge exposure technology that need not adopt is revised the edge of photoresist layer; Avoid the generation of light leakage phenomena, saved processing step.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (13)
1. the formation method of photoresist layer in the deep trench processes is characterized in that, comprising:
Wafer is provided;
On said wafer, adopt spin coating proceeding to form photoresist layer, adopt the photoresist layer of trimming removal of solvents crystal round fringes partial width simultaneously, the removal width of said photoresist layer is 1.7 ~ 1.9 millimeters;
To said photoresist layer make public with developing process form patterned photoresist layer.
2. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 1, and the range of flow of said trimming solvent is 10 ~ 20 ml/min.
3. the formation method of photoresist layer in the deep trench processes as claimed in claim 2; It is characterized in that; During the photoresist layer of said employing trimming removal of solvents crystal round fringes partial width, the injection direction line of trimming solvent and the angular range of crystal column surface are 40 ~ 60 degree.
4. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 3, and the projection line of injection direction line on wafer of said trimming solvent is parallel with the tangent line at the edge of wafer.
5. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 1, and the material of said photoresist layer is a deep ultraviolet light-sensitive lacquer.
6. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 5, and said photoresist layer thickness is 4500 ~ 5500 dusts.
7. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 6, and the temperature of chamber is 21 ~ 23 degree during said spin coating proceeding, and relative humidity is 40% ~ 50%.
8. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 6, and the pressure of the following air draft of chamber is 40 ~ 60 handkerchiefs during said spin coating proceeding.
9. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 1, and said trimming solvent is an organic solvent.
10. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 1, after the employing spin coating proceeding forms photoresist layer, also comprises: said wafer is carried out the gluing after-baking.
11. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 10, the temperature of said gluing after-baking is 70 ~ 180 degrees centigrade, and the time is 20 ~ 200 seconds.
12. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 1, also comprises: with said patterned photoresist layer is mask, and the said wafer of etching forms deep trench.
13. the formation method of photoresist layer is characterized in that in the deep trench processes as claimed in claim 12, the degree of depth of said deep trench is greater than 1 micron.
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| CN104779178A (en) * | 2014-01-13 | 2015-07-15 | 中芯国际集成电路制造(上海)有限公司 | Bottom anti-reflective coating forming method |
| CN108493099A (en) * | 2018-04-11 | 2018-09-04 | 武汉新芯集成电路制造有限公司 | A kind of wafer bonding method |
| CN109378271A (en) * | 2018-10-22 | 2019-02-22 | 京东方科技集团股份有限公司 | The preparation method of patterned metallic diaphragm, thin film transistor (TFT), display base plate |
| CN110391135A (en) * | 2019-08-08 | 2019-10-29 | 武汉新芯集成电路制造有限公司 | Remove the manufacturing method of the remaining method of photoresist and semiconductor devices |
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| CN112558418A (en) * | 2020-12-16 | 2021-03-26 | 上海华力微电子有限公司 | Photoresist coating device |
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| CN112558418A (en) * | 2020-12-16 | 2021-03-26 | 上海华力微电子有限公司 | Photoresist coating device |
| CN113808922A (en) * | 2021-09-14 | 2021-12-17 | 苏州汉天下电子有限公司 | Pattern etching method of wafer, thin film resonator assembly and preparation method |
| CN113808922B (en) * | 2021-09-14 | 2024-03-19 | 苏州汉天下电子有限公司 | Pattern etching method of wafer, thin film resonator component and preparation method |
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