CN102725830B - The thickness of retainer ring and the immediately monitoring method and apparatus of useful life - Google Patents

The thickness of retainer ring and the immediately monitoring method and apparatus of useful life Download PDF

Info

Publication number
CN102725830B
CN102725830B CN201180007401.4A CN201180007401A CN102725830B CN 102725830 B CN102725830 B CN 102725830B CN 201180007401 A CN201180007401 A CN 201180007401A CN 102725830 B CN102725830 B CN 102725830B
Authority
CN
China
Prior art keywords
retainer ring
carrier head
inductor
substrate
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180007401.4A
Other languages
Chinese (zh)
Other versions
CN102725830A (en
Inventor
P·迈克雷诺兹
E·S·鲁杜姆
G·C·里昂
A·H·钟
G·E·蒙柯
G·B·普拉巴
T·H·奥斯特赫尔德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102725830A publication Critical patent/CN102725830A/en
Application granted granted Critical
Publication of CN102725830B publication Critical patent/CN102725830B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

Describe a kind of method and apparatus of situation of the surface in order to monitor retainer ring herein, wherein this retainer ring is arranged in the carrier head in polishing module.In one embodiment, a kind of equipment is provided.This equipment comprises: carrier head, and in the removable travel path between at least one polishing block of this carrier head, described polishing block is used for the polishing substrate when substrate is fixed in carrier head; And transfer station, this transfer station in order to transmit substrate to carrier head with transmit substrate from carrier head, carrier head has retainer ring and is arranged on the inductor in the travel path of carrier head, and inductor can operate the tolerance providing the situation that can indicate retainer ring.

Description

The thickness of retainer ring and the immediately monitoring method and apparatus of useful life
Background of invention
Invention field
Embodiments of the invention relate to the polishing system in order to polishing substrate (such as semiconductor chip).More specifically, the method and apparatus of the parts monitoring polishing system is related to.
Description of related art
Chemico-mechanical polishing (CMP) is a kind of manufacture being generally used in high density integrated circuit with planarization or polishing is deposited on the technique of on-chip material layer.Can provide the polishing block platform of substrate to being positioned on polishing system, and be fixed in carrier head by substrate, carrier head controllably promotes substrate makes substrate against the polishing pad of movement.Under the existence of polishing fluids, via providing the contact of the feature side of substrate and carrying out mobile substrate relative to polishing pad, CMP can be effectively utilized.Material is removed from the feature side of substrate, and wherein the feature side of substrate contacts with polished surface with the combination of mechanism via chemistry.
Usually, carrier head comprises retainer ring (retainingring), and retainer ring is around substrate and can promote the fixing of substrate in carrier head (holding).Usually, during polishing, one or more surface contact polishing pad of retainer ring.Although retainer ring is suitable for the polishing tolerating multiple substrate, these surfaces of contact polishing pad can experience wearing and tearing, and regularly replace retainer ring and be necessary.Therefore, the detection of retainer ring is necessary, to monitor wearing and tearing and to determine to change interval.
Conventional detection method is consuming time, needs the parts of personnel physically in console, and needs polishing system to shut down.In addition, conventional method may need part dismantle polishing block and remove carrier head from platform, and this measure can make intrasystem miscellaneous part be exposed to pollution.
So, need a kind ofly to promote the monitoring of retainer ring and the method and apparatus not needing physically to handle retainer ring or shut down by polishing system.
Summary of the invention
The present invention provides a kind of monitoring of the retainer ring promoted in polishing system by and large, with the method and apparatus of the useful life of the situation and/or assessment retainer ring of determining retainer ring.In one embodiment, a kind of equipment is provided.This equipment comprises: carrier head, this carrier head can be displaced into when substrate is fixed in carrier head between be used for polishing substrate at least one polishing block between travel path in; And transfer station, this transfer station in order to transmit substrate to carrier head with transmit substrate from carrier head, carrier head has retainer ring, and is arranged on the inductor in the travel path of carrier head, and inductor can operate the tolerance providing the situation that can indicate retainer ring.
In another embodiment, provide a kind of transfer station, transfer station to be arranged in polishing module and to be used to transmit substrate between substrate transfer device and at least one carrier head.This transfer station comprises: load cup assembly, loads cup assembly and has main body, and the size of main body can receive substrate and retainer ring at least partially, and retainer ring is couple at least one carrier head described; And inductor, inductor is arranged in main body, and inductor can operate the tolerance providing the situation that can indicate retainer ring, and wherein substrate comprises the first radius, and inductor to be positioned in main body and to be in the second radius, and the second radius is greater than the first radius.
In another embodiment, a kind of method being couple at least one surface of the retainer ring of carrier head in order to monitoring is provided.The method comprises the following steps: mobile carrier head, makes the contiguous transformer device be arranged in polishing module of carrier head; Energy is transmitted towards retainer ring from transformer device; Receive the energy reflected from retainer ring; And based on the energy received, determine the situation of retainer ring.
In another embodiment, a kind of method being couple at least one surface of the retainer ring of carrier head in order to monitoring is provided.The method comprises the following steps: mobile carrier head, and make the contiguous loading cup assembly be arranged in polishing module of carrier head, described transformer device is arranged in the main body of described loading cup assembly; When retainer ring is in the sight line of transformer device, transmit energy from transformer device towards the surface of retainer ring; Receive the energy reflected from described surface; And based on the energy received, determine the thickness of retainer ring.
In another embodiment, a kind of method being couple at least one surface of the retainer ring of carrier head in order to monitoring is provided.The method comprises the following steps: mobile carrier head, and make the contiguous loading cup assembly be arranged in polishing module of carrier head, described transformer device is arranged in the main body of described loading cup assembly; Rinse retainer ring; When retainer ring is in the sight line of transformer device, transmit energy from transformer device towards the surface of retainer ring; Receive the energy reflected from described surface; And based on the energy received, determine the thickness of retainer ring.
In another embodiment, a kind of equipment is provided.This equipment comprises: carrier head, this carrier head can be displaced into when substrate is fixed in carrier head between be used for polishing substrate at least one polishing block between travel path in; And transfer station, this transfer station in order to transmit substrate to carrier head with transmit substrate from carrier head, carrier head has retainer ring, and is arranged on the inductor in the travel path of carrier head, and inductor can operate the tolerance providing the situation that can indicate retainer ring.
In another embodiment, provide a kind of transfer station, transfer station to be arranged in polishing module and to be used to transmit substrate between substrate transfer device and at least one carrier head.This transfer station comprises: load cup assembly, loads cup assembly and has main body, and the size of main body can receive substrate and retainer ring at least partially, and retainer ring is couple at least one carrier head described; And inductor, inductor is arranged in main body, and inductor can operate the tolerance providing the situation that can indicate retainer ring, and wherein substrate comprises the first radius, and inductor to be positioned in main body and to be in the second radius, and the second radius is greater than the first radius.
Accompanying drawing explanation
Therefore, can understand the mode of above-mentioned feature structure of the present invention in detail, can refer to embodiment and know that summarize of the present invention more specifically describes above, some of them embodiment illustrates in the accompanying drawings.But it should be noted, accompanying drawing only illustrates exemplary embodiments of the present invention, and therefore can not be construed as limiting scope, because the present invention can allow other Equivalent embodiments for being considered as.
Fig. 1 is the plane graph of an embodiment of polishing system.
Fig. 2 is the phantom of an embodiment of transfer station, and this transfer station can be used in the polishing system of Fig. 1.
Fig. 3 is the schematic cross sectional views of another embodiment of transfer station, and this transfer station can use together with the polishing system of Fig. 1.
Fig. 4 is the schematic cross sectional views of another embodiment of transfer station, and this transfer station can use together with the polishing system of Fig. 1.
Fig. 5 A is the partial plan of an embodiment of retainer ring.
Fig. 5 B is the schematic cross sectional views of another embodiment of transfer station, and this transfer station can use together with the polishing system of Fig. 1.
Fig. 6 is the schematic cross sectional views of another embodiment of transfer station, and this transfer station can use together with the polishing system of Fig. 1.
Fig. 7 is a flow chart, an embodiment of flow chart graphic technique.
For promote understanding, use identical component symbol to specify these graphic total similar elements when possibility.It should be understood that the element disclosed in an embodiment can be advantageously used in other embodiments and not need special detailed description.
Embodiment
The present invention provides method for supervising and the equipment of the retainer ring that can promote in polishing system by and large, with the useful life of the wearing and tearing and/or assessment retainer ring of determining retainer ring.Describe (on-tool) supervising device on instrument, on this instrument, supervising device provides the monitoring of retainer ring, and does not need physically to handle retainer ring or shut down by polishing system.In addition, the data carrying out self-monitoring device can be provided to controller and be used to adjust follow-up glossing.
Fig. 1 is the plane graph of polishing system 100, and polishing system 100 has polishing module 105 and substrate transfer device, and polishing system 100 is suitable for electrochemical mechanical polishing and/or chemico-mechanical polishing.Polishing module 105 comprises the first polishing block 110A be arranged in the shell 115 of controlled environment, the second polishing block 110B and the 3rd polishing block 110C.Substrate transfer device (such as rotating disk 125) mobile substrate between polishing block 110A, 110B and 110C.Any one performed planarization of polishing block 110A, 110B, 110C or glossing, with the feature side removing materials from substrate, and form flat surfaces on feature side.Module 105 can be larger polishing system (such as lKECMP tM, MIRRA and REFLEXIONGT tMpolishing system and can buy from the Applied Materials in California, USA Sheng great Ke Laola city, although other polishing systems can be used) a part.Other polishing modules (comprise use the polishing pad of other types, band, can the net formula pad of index or those polishing modules of combinations thereof, and make substrate relative to polished surface to rotate, linear or other plane motions carry out those polishing modules of movement) also can benefit from embodiment described herein.
In one embodiment, polishing module 105 polishing block 110A-110C respective each be suitable for performing conventional chemico-mechanical polishing (CMP) technique.Or the first polishing block 110A can be configured to perform electrochemical machinery planarization (ECMP) technique, and the second polishing block 110B and the 3rd polishing block 110C can perform CMP.In an embodiment of technique, substrate has and is formed in the substrate and the coating characterizing definition being stamped barrier layer, with the electric conducting material be arranged on above barrier layer, can with two steps, electric conducting material be removed via CMP in the first polishing block 110A and the second polishing block 110B, and barrier layer processes via the 3rd CMP in the 3rd polishing block 110C, to form planarized surface on substrate.
In one embodiment, system 100 comprises module pedestal 118 (module pedestal 118 supports polishing block 110A, 110B and 110C), transfer station 120 and rotating disk 125.Polishing block 110A, 110B and 110C comprise polishing fluids conveying arm 128 separately, and polishing fluids conveying arm 128 is suitable for, during glossing, polishing fluids is transported to polished surface 175.Multiple adjusting device 130 is illustrated as and is couple to module pedestal 118 and removable in direction A, with the respective top in order to optionally adjusting device 130 is seated in polishing block 110A, 110B and 110C.Transfer station 120 promotes that substrate 135 is sent to system 100 via wet type robot 140 and transmits substrate 135 from system 100 substantially.Usually, wet type robot 140 transmits substrate 135 between transfer station 120 and factory interface (not shown), and wherein factory interface can comprise clean module, measurement apparatus and one or more wafer storage casket box.Transfer station 120 comprises the first buffer table 145, second buffer table 150, transfer robot 155 and loads cup assembly 160.Transfer robot 155 transmits substrate between the first buffer table 145, second buffer table 150 and loading cup assembly 160.Load cup assembly 160 and comprise supervising device 162, supervising device 162 is couple to controller.
Rotating disk 125 comprises multiple arm 170, and each arm 170 supporting carrier head 165A-165D.A part for carrier head 165C and 165D and two-arm 170 is illustrated as dotted line, so that can see the polished surface 175 of transfer station 120 and polishing block 110C.Polished surface 175 comprises the upper surface of the pad assembly be arranged in rotatable platform (not shown in this figure).Carrier head 165A-165D comprises actuator 168 separately.Rotating disk 125 is at transfer station 120 and mobile carrier head 165A-165D between polishing block 110A, 110B and 110C, and actuator 168 is suitable for carrier head 165A-165D to move relative to rotating disk 125.Rotating disk 125 is can index (indexable), to make it possible to via user-defined order mobile carrier head 165A-165D between polishing block 110A, 110B, 110C and transfer station 120.During each comfortable glossing of carrier head 165A-165D, a substrate 135 is fixed on polishing block 110A-110C.Each polishing block comprises other polishing modules (the such as REFLEXIONGT more than a carrier head tMpolishing system) also can be suitable for benefiting from embodiment described herein.Carrier head 165A-165D can move separately in the longitudinal axis of each arm 170.The substrate 135 through polishing can be transmitted from each carrier head 165A-165D at transfer station 120A place.In addition, at transfer station 120 place, the substrate 135 without polishing can be sent to each carrier head 165A-165D.As shown in reference to carrier head 165D, carrier head 165D can be displaced into along the longitudinal axis of arm 170 travel path 164 indicated by dotted line, to allow that carrier head 165D can close to loading cup assembly 160 and the transmission of promotion substrate.
In one embodiment, rotating disk 125 advances with counter clockwise direction (direction B), to be displaced into by carrier head 165A-165D above polishing block 110A-110C and transfer station 120 in order.During processing, these four carrier head 165A-165D wherein three there is substrate be fixed in these three carrier head, and to be arranged on above polishing block 110A, 110B, 110C to perform glossing on polishing block 110A, 110B, 110C.By mobile substrate between these, substrate 135 is processed in order, and substrate 135 is fixed in identical carrier head 165A-165D simultaneously.In one example, three carrier head 165A-165C contain substrate, and promote the polished surface 175 of substrate 135 towards polishing block 110A, 110B and 110C.During polishing, the carrier head 165A-165C containing substrate is rotated with counter clockwise direction (direction C), and polished surface 175 is rotated with counter clockwise direction (direction D) simultaneously.
When three carrier head (being illustrated as carrier head 165A-165C in this example) are used in platform 110A-110C place, the contiguous transfer station 120 of carrier head 165D, wherein substrate transmission technique occurs at transfer station 120 place.When these three carrier head 165A-165C perform glossing, carrier head 165D can leave unused and reach a period.At this moment during section, carrier head 165D is ready to be used in polishing block 110A in the subsequent cycles at place of transfer station 120.Carrier head 165D can advance along travel path 164, with close to transfer station 120.When carrier head 165D is positioned at transfer station 120 place, carrier head 165D can unload the substrate 135 through polishing and be cleaned, and receives new unpolished substrate 135 for the glossing at polishing block 110A.In one embodiment, use the supervising device 162 be arranged in transfer station 120 to detect carrier head 165D.
Polished surface 175 is roughened, to promote that material removes from the machinery of substrate 135.The polished surface 175 of polishing pad can be polymeric material, and this polymeric material can be complete dielectric, to promote material removing from substrate 135 during glossing.Or the polished surface 175 of polishing pad can be conduct electricity at least partly, to promote that in electrochemical mechanical polishing (ECMP) technique material is from the electrochemical dissolution of substrate.Spendable suitable polymeric material comprises polyurethanes, Merlon, fluorinated polymer, PTFE, PTFA, polyphenylene sulfide (PPS) or combinations thereof, and is used in other polishing materials on polishing substrate surface.In one embodiment, the polished surface 175 of polishing pad comprises the polymeric material of the polyurethane material of such as open aperture or closed pores, and this polymeric material is used in the manufacture in order to the polishing pad of polishing semiconductor substrate usually.In another embodiment, the polished surface 175 of polishing pad can containing fixing abrasion grain.Usually, during polishing, polishing fluids is transported to the polished surface 175 of polishing pad.Polishing fluids can be slurry or fluid electrolyte, the polishing pad type depending on glossing He use.
Fig. 2 is the phantom of an embodiment of the transfer station 120 of Fig. 1.As mentioned above, transfer station 120 comprises loads cup assembly 160, loads contiguous first buffer table 145 of cup assembly 160.First buffer table 145 can be configured to supporting substrate 135 input or output buffer table.Transfer robot 155 transmits substrate 135 between the first buffer table 145 and loading cup assembly 160, loads cup assembly 160 and promotes that substrate arrives the transmission of carrier head 165D.
In one embodiment, the first buffer table 145 supports the substrate 135 through polishing, to allow that substrate 135 is sent to factory interface by wet type robot 140 (Fig. 1), for follow-up polishing and/or storage.In another embodiment, the first buffer table 145 supports unpolished substrate 135, to allow that carrier head 165D receives substrate 135, for polishing on polishing block 110A.In one embodiment, transfer robot 155 is configured and transmits substrate 135 between the first buffer table 145 and loading cup assembly 160, to allow that carrier head 165D receives substrate 135, as shown with a dotted line in fig. 2.
Carrier head 165D is couple to axle 200, and axle 200 is couple to motor 215, and motor 215 is configured to relative to arm 170 with linear movement (X and/or Y-direction) laterally mobile carrier head 165D.Carrier head 165D also comprises actuator or motor 210, in order to raise in Z-direction relative to arm 170 or to reduce carrier head 165D.Carrier head 165D is also couple to revolving actuator or motor 220, and revolving actuator or motor 220 are suitable for carrier head 165D to rotate around rotating shaft relative to arm 170.The motor 210,215 and 220 be arranged on carrier head 165D is also configured to the movement of the polished surface 175 (Fig. 1) providing carrier head 165D relative to polishing pad.In one embodiment, motor 210,215 and 220 is configured to carrier head 165D to rotate relative to the polished surface 175 rotated, and provides downward force to make substrate 135 against the polished surface 175 of polishing pad to promote the substrate 135 be fixed in carrier head 165D during processing.Carrier head 165D structure shown in Fig. 2 and operation can the carrier head 165A-165C of representative graph 1, and for simplicity, no longer describe carrier head 165A-165C.
Carrier head 165D comprises main body 225, main body 225 be fixed ring 230 institute around.Carrier head 165D also contains one or more capsule room 235A, 235B, the contiguous flexible membrane 240 of capsule room 235A, 235B.When substrate 135 is fixed in carrier head 165D, flexible membrane 240 contacts the dorsal part of substrate 135.Capsule room 235A and 235B is couple to the first variable pressure source 245A, and the first variable pressure source 245A optionally carries fluid to capsule room 235A and 235B to apply force to flexible membrane 240.In one embodiment, capsule room 235A applies force to the exterior domain of flexible membrane 240, and capsule room 235B applies force to the central area of flexible membrane 240.The power being applied to flexible membrane 240 from capsule room 235A and 235B is sent to the part of substrate 135, and can in order to promote the polished surface of part towards polishing pad (not shown) of substrate 135.First variable pressure source 245A is configured to carry independently fluid to each of capsule room 235A and 235B, to control to the power of the separated region of substrate 135 via flexible membrane 240.In addition, vacuum port (not shown) can be provided in carrier head 135, to apply the dorsal part of suction to substrate 135, promote substrate 135 fixing in carrier head 165D.The example of spendable carrier head 165D comprises the TITANHEAD that can buy from the Applied Materials in California, USA Sheng great Ke Laola city tM, TITANCONTOUR tMand TITANPROFILER tMcarrier head.
In one embodiment, retainer ring 230 is couple to main body 225 via actuator 232.Actuator 232 is controlled by the second variable pressure source 245B.Second variable pressure source 245B provides fluid to actuator 232 or from actuator 232 removing fluids, and this measure makes retainer ring 230 can move at least Z-direction relative to the main body 225 of carrier head 165D.Second variable pressure source 245B is suitable for moving independent of what provided by motor 210 and providing the Z-direction of retainer ring 230 to move.Second variable pressure source 245B via applying negative pressure or can just be pressed onto actuator 232 and/or retainer ring 230 to provide the movement of retainer ring 230.In one aspect, during glossing, pressure is applied to retainer ring 230 to promote the polished surface 175 (Fig. 1) of retainer ring 230 towards polishing pad (not shown).First variable pressure source 245A and the second variable pressure source 245B can be couple to controller separately, to promote the execution of polishing formula (polishrecipe), wherein this polishing formula automatically controls to the pressure in the region of substrate 135 during glossing.
During glossing, retainer ring 230 can contact polished surface 175.Retainer ring 230 also can promote the transmission of polishing fluids on polished surface 175, and produces heat because contacting caused friction with polished surface 175.During glossing, the heat of fluid transmission and generation can be utilized benefit.With the contact of polished surface 175, retainer ring 230 is worn and torn.The wearing and tearing on the surface of retainer ring 230 can affect glossing, and retainer ring 230 needs to change the most at last.So, the thickness of retainer ring 230 must be assessed termly, to determine wearing and tearing and to change interval.
In one embodiment, the surface of retainer ring 230 is monitored by being arranged on the supervising device 162 loaded in cup assembly 160.When carrier head 165D is contiguous load cup assembly 160 time, the surface of retainer ring 230 can be sensed and represent that the data of the wearing and tearing of retainer ring 230 can be sent to controller.Controller can be communicated with monitor, to show data to user.Carry out the data of self-monitoring device 162 in order to prediction and/or the situation determining retainer ring 230, this situation is used to useful life and the replacing of determining retainer ring 230.In one embodiment, data can indicate the thickness of retainer ring 230.Alternatively or additionally, controller can be can analyze data and in technical recipe, implement correcting measuring to compensate the system controller of the wearing and tearing of retainer ring 230 in glossing.Therefore, carry out the data of self-monitoring device 162 in order to determine useful life and the replacing of retainer ring 230, and can extraly as being used to the control handle adjusting glossing.In addition, in the system of multiple carrier head with band retainer ring, can utilize the data of self-monitoring device 162 to come independent of other the multiple retainer rings in the multiple carrier head of other in system, adjust the technical recipe of indivedual retainer ring.For example, because each retainer ring may wear and tear with different rates, the technical recipe of the retainer ring of adjustable in a carrier head, and can other the multiple technical recipes on other the multiple retainer rings in all the other multiple carrier head be maintained in identical.
Fig. 3 is the schematic cross sectional views of another embodiment of transfer station 120, and transfer station 120 can use together with the polishing system 100 of Fig. 1.Transfer station 120 comprises loads cup assembly 160, and carrier head 165D is arranged to contiguous loading cup assembly 160.In this embodiment, when carrier head 165D is not used to carry out polishing on the polishing block 110A-110C of Fig. 1, loading cup assembly 160 is configured to the rinsing table 300 as being suitable for clean carrier head 165D.
In one embodiment, load cup assembly 160 and comprise main body 305, main body 305 has the circle of reference cone or ring 307 that are couple to pedestal 309.Ring 307 and pedestal 309 can move relative to module pedestal 118 via the first actuator 310A.First actuator 310A can in order to relative to module pedestal 118 mobile agent 305 at least linear direction (Z-direction).Load cup assembly 160 and also comprise bracket 320, bracket 320 is suitable for supporting substrate 135 (shown in dotted line).Bracket 320 is couple to the second actuator 310B, and the second actuator 310B is suitable for raising and the stayed surface 321 reducing bracket 320.Second actuator 310B is via relative to main body 305 movable support surface 321 and promote substrate 135 to be sent to carrier head 165D or to transmit substrate 135 from carrier head 165D in z-direction.
Main body 305 also comprises multiple nozzle 315, and these nozzles 315 are in order to clean carrier head 165D when bracket 320 not existing substrate.These nozzles 315 are communicated with pressure fluid supply 330 fluid.Pressure fluid supply 330 is containing fluid (such as deionized water), and fluid is applied in via nozzle 315 with clean carrier head 165D.In one embodiment, the stayed surface 321 of bracket 320 is configured to the ring as having multiple open area, to allow that the cleaning fluid from nozzle 315 can clash into carrier head 165D.Cleaning fluid cleaning may be retained in the polishing fluids from glossing on carrier head 165D and other fragments.Rinsing table 300 also containing the opening 325 be formed in pedestal 309, opening 325 as tap, optionally to remove the fluid and polishing fragment that come off from carrier head 165D.
In this embodiment, rinsing table 300 comprises supervising device 162, and supervising device 162 comprises the inductor 335 being couple to controller.Inductor 335 is suitable for the thickness T measuring retainer ring 230.In one embodiment, inductor 335 is ultrasonic sensing devices.Inductor 335 can be couple to main body 305 or be embedded in main body 305, to transmit and to receive sound wave.Sound wave is sent to controller, to provide the tolerance of the thickness T that can indicate retainer ring 230.In one embodiment, retainer ring 230 comprises two annulus, such as upper part 355A and lower part 355B.In one embodiment, it is chemically inert material in a cmp process that upper part 355A and lower part 355B can contain, such as metal material, ceramic material or plastic material.In one embodiment, lower part 355B contains plastic cement, the PEEK material of such as polyphenylene sulfide (PPS), polyether-ether-ketone (PEEK), carbon containing, contains pEEK material or composite material.Upper part 355A can containing the material more rigid or finer and close than lower part 355B.In one embodiment, upper part 355A contains stainless steel, aluminium, molybdenum or ceramic material.
In an example of operation, inductor 335 is installed on the active surface 340 of the touchdown area 345 of main body 305.Touchdown area 345 can be defined by the region of the basal surface of ring 307, and wherein the lower part 355B of retainer ring 230 herein can the surface of contact ring 307.Active surface 340 can flush with the surface of ring 307 at touchdown area 345 place of location retainer ring 230.In one embodiment, sound wave is sent to and by the lower part 355B of retainer ring 230, and is reflected from upper part 355A.Signal through reflection is sent to controller and is used to determine the thickness T of the lower part 355B of retainer ring 230.Thickness T can indicate the wearing and tearing of retainer ring 230 along with the change of time.
Fig. 4 is the schematic cross sectional views of another embodiment of transfer station 120, and transfer station 120 can use together with the polishing system 100 of Fig. 1.In this embodiment, load cup assembly 160 and be configured to as rinsing table 400, rinsing table 400 can be similar in fact the embodiment shown in Fig. 3.For simplicity, the element of the transfer station 120 being similar to Fig. 3 transfer station 120 will no longer be repeated.
In this embodiment, supervising device 162 comprises inductor 335, and inductor 335 is vortex flow inductor and is suitable for measuring the thickness T of lower part 355B.In this embodiment, the active surface 340 of the contact surface 405 meeting contact ring 307 of lower part 355B.In other embodiments, inductor 335 can be utilized when retainer ring 230 is separated by with ring 307.In one aspect, the displacement between the contact surface 405 being suitable for can being used to as the inductor 335 of vortex flow inductor the upper part 355A measuring active surface 340 and retainer ring 230.Displacement corresponds to the change of at least thickness of the lower part 355B of retainer ring 230.When the lower part 355B of retainer ring 230 contacts active surface 340, or when lower part 355B be retained to be separated by a constant distance with active surface 340 time, can displacement be determined.
Fig. 5 A is the partial plan of an embodiment of the retainer ring 230 with one or more groove 500.One or more groove 500 is formed in retainer ring 230 separately, and at the desired depth place between the contact surface 405 and the bottom 505 of groove 500 of retainer ring 230.Each is arranged on groove 500 on retainer ring 230 can in order to send promotion polishing via what increase polishing fluids during glossing.
Fig. 5 B is the schematic cross sectional views of another embodiment of transfer station 120, and this transfer station 120 can use together with the retainer ring 230 shown in the polishing system 100 of Fig. 1 and Fig. 5 A.Retainer ring 230 comprises one or more groove 500, and these grooves 500 have the degree of depth D' defined by contact surface 405 and bottom 505.The change of the degree of depth D' of groove 500 corresponds to the change of the thickness of retainer ring 230.In one embodiment, inductor 335 can be couple to ring 307 or be embedded in ring 307.Inductor 335 can be optical sensor, vortex flow inductor, ultrasonic sensing device or other suitable induction installations.In one embodiment, inductor 335 is ultrasonic sensing devices, and ultrasonic sensing device is configured to transmit and receives the sound wave (being depicted as signal 510) striking contact surface 405.Sound wave is sent to controller to provide the tolerance of the degree of depth D' that can indicate groove 500 and the thickness that thus can indicate retainer ring 230, and no matter retainer ring 230 responds to dry type or wet type all can.Therefore, the degree of depth of groove 500 measured between contact surface 405 and bottom 505 can be determined to wear and tear, and does not need the material contact between retainer ring 230 and other parts of loading cup assembly 160.Carrier head 165D rotates, to provide the induction of multiple positions of retainer ring 230 by rotary speed that can be predetermined.Therefore, multiple groove 500 can be monitored.Or carrier head 165D can not move, to allow the induction of single groove 500.In another embodiment, controlled air column or liquid column can be utilized to come around signal 510 and control the interface between retainer ring 230 and inductor 335.For example, bubbler (not shown) can be utilized to form cylindrical air post, and this cylindrical air band of column is around the path of signal 510.
In one embodiment, the position of supervising device 162 is positioned at the outside in the region of substrate 135, to avoid any unfavorable induction of the part of non-be concerned about substrate 135 or carrier head 165.For example, when circular substrate, substrate 135 comprises the first radius R 1.In one embodiment, for the substrate of 200mm diameter, the first radius R 1comprise the radius of about 100mm.In another embodiment, for the substrate of 300mm diameter, the first radius R 1comprise the radius of about 150mm.In one embodiment, supervising device 162 is positioned at the second radius R 2place, the second radius R 2be greater than the first radius R 1or be positioned at the first radius R 1outside.For 200mm substrate, the second radius R 2can be separated by with center line C' and be greater than about 100mm, all 105mm according to appointment to about 120mm.In another example, for 300mm substrate, the second radius R 2can be separated by with center line C' and be greater than about 150mm, all 155mm according to appointment to about 170mm.Center line C' loads the geometric center of cup assembly 160 and/or the center of carrier head 165D.Therefore, any unfavorable induction of the part of non-be concerned about substrate 135 or carrier head 165D can be avoided in the location of supervising device 162.
Fig. 6 is the schematic cross sectional views of another embodiment of transfer station 120, and this transfer station 120 can use together with the polishing system 100 of Fig. 1.In this embodiment, load cup assembly 160 and be similar to the embodiment shown in Fig. 3, Fig. 4 and Fig. 5.For simplicity, the element of the transfer station 120 being similar to Fig. 3-Fig. 5 transfer station 120 will no longer be repeated.In one embodiment, retainer ring 230 comprises one or more groove 500, and is similar to the embodiment of the retainer ring 230 of Fig. 5.
In this embodiment, supervising device 162 comprises inductor 335, and inductor 335 is ultrasonic sensing devices, although can use optical sensor, vortex flow inductor or other suitable induction installations.In one embodiment, when retainer ring 230 is arranged in sight line (line-of-sight) or the visual field (fieldofview) of inductor 335, inductor 335 can be used.In other embodiments, when retainer ring 230 is at least partially disposed in loading cup assembly 160, inductor 335 can be used.In one aspect, inductor 335 comprises tubular conduit 600, and tubular conduit 600 is arranged to proximity sensing device 335.Tubular conduit 600 is couple to fluid supply machine 605, and fluid supply machine 605 carries the fluid of such as deionized water with the signal path around inductor 335.Fluid is used to remove not controlled air, and wherein this not controlled air may affect the signal of self-inductor 335.In one embodiment, the active surface 340 of the contact surface 405 of retainer ring 230 directly contact ring 307.In another embodiment, tubular conduit 600 is couple to actuator 610, and actuator 610 tolerable tubular conduit 600 extends relative to the active surface 340 of ring 307 and retracts.When carrier head 165D does not have contact ring 307, towards contact surface 405, tubular conduit 600 can be activated the position of the contact surface 405 of the contiguous retainer ring 230 that (shown in dotted line) arrives.Tubular conduit 600 can comprise inductor 335 at least partially, and this of inductor 335 moves towards the contact surface 405 of retainer ring 230 at least partially together with tubular conduit 600.When not needing inductor 335, tubular conduit 600 also can be retracted by actuator 610.
Fig. 7 is flow chart, an embodiment of this flow chart graphic technique 700.705, the carrier head 165D with retainer ring 230 is moved and makes the contiguous supervising device 162 of carrier head 165D.In one embodiment, supervising device 162 is arranged on the loading cup assembly 160 in polishing module 105.In other embodiments, supervising device 162 can be close to transfer station 120 or be arranged in contiguous transfer station 120 carrier head 165D travel path or be positioned on other positions of polishing module 105.Supervising device 162 comprises inductor 335, and energy is transmitted (as shown by 710) from inductor 335.Energy can be ultrasonic wave, light wave or magnetic field or magnetic signal.715, the sensed device 335 of energy reflected from retainer ring 230 receives.The energy reflected can from the inner surface on the surface of retainer ring 230 or outer surface.720, based on received energy, determine the situation of retainer ring.The signal reflected can be provided to controller, to obtain the tolerance that can indicate the situation (the such as thickness of the part of retainer ring 230 or retainer ring 230, or the degree of depth of the groove 500 of the retainer ring 230 that can be associated with the thickness of retainer ring 230) of retainer ring 230.These data can be utilized to determine the adjustment of the variable in the replacing interval of retainer ring 230 and/or follow-up glossing.
Embodiment described herein provides the method and apparatus of the surface appearance monitoring retainer ring 230, and wherein this retainer ring 230 is arranged in the carrier head (all carrier head 165A-165D as described herein) in polishing block.Supervising device 162 is described as and can be arranged on (on-tool) on instrument, and can respond to retainer ring 230 situation between multiple polishing circulation in one embodiment.Predetermined space can be set by the user according to the part monitored as routine or according to based on the interval selected by user preferences, and the induction of retainer ring 230 can be set.The data carrying out self-monitoring device 162 are provided to controller, wherein this controller can in order to monitor retainer ring 230 wearing and tearing, determine the useful life of retainer ring 230 and/or determine the replacing interval of retainer ring 230.In one aspect, the data carrying out self-monitoring device 162 can in order to predict the useful life of retainer ring 230 and to promote the replacing of retainer ring 230 when available useful life stops.In another aspect, the data carrying out self-monitoring device 162 can in order to predict useful life and to promote to change interval (even if retainer ring 230 is not worn completely) easily.
The embodiment of supervising device 162 described herein by the manipulations of physical of carrier head 165A-165D and retainer ring 230 and/or and the Mechanical Contact of carrier head 165A-165D and retainer ring 230 minimize or remove.For example, the mechanical measuring device of such as clamp needs to contact with retainer ring 230.During measuring, may damage retainer ring 230 with the contact of mechanical measuring device, this measure then can damage polished surface 175 during processing.Can measure in instrument, and not need polishing system to shut down.In addition, do not need retainer ring 230 fully drying to measure.Supervising device 162 is installed on instrument, so that environment is comprised in the shell 115 (Fig. 1) of controlled environment.Therefore, supervising device 162 described herein provides the monitoring of retainer ring 230, and damages the environment handled or contact carrier head 165A-165D and/or destroy polishing module 105 hardly potentially.Consuming time and possible coarse vision-based detection also can be removed or be minimized by the method and equipment.In addition, production capacity can be maximized, this is because polishing system does not need the measurement in order to be fixed ring 230 and/or observation and shuts down.
In addition, the control variables during retainer ring 230 wear data can be used as glossing.For example, if retainer ring 230 comprises groove 500 and groove 500 shows the wearing and tearing of scheduled volume, one or more burnishing parameters of adjustable, to compensate any retainer ring 230 thickness effect for polishing uniformity.In one example, adjustable burnishing parameters (rotary speed of such as carrier head 165A-165D and downward force), to solve the wearing and tearing of retainer ring 230 and to imitate the polishing effect of retainer ring 230 of almost not wearing and tearing.In one aspect, the rotary speed of carrier head 165A-165D can be accelerated, to promote the transmission of polishing fluids and produce heat on polished surface 175, this equals in fact the effect of the retainer ring 230 almost do not worn and not torn.
In another example, during the useful life of retainer ring 230, retainer ring 230 wear data can be utilized heterogeneity in wafer to be minimized.Automatic controlling system can utilize retainer ring 230 wear data, wherein this automatic controlling system couples is to capsule room 235A and 235B in multizone carrier head (all carrier head 165D as shown in Figure 2).In addition, automatic controlling system can be communicated with the actuator 232 on the carrier head 165D shown in Fig. 2.In one aspect, in response to the change of the thickness of retainer ring 230, change the pressure being applied to exterior domain (capsule room 235A) and/or retainer ring 230 by actuator 232.Immediately can carry out being applied to the pressure of substrate by capsule room 235A and 235B and/or being applied to the change of pressure of retainer ring 230 based on the thickness data of retainer ring 230.Therefore, removing speed, removing profile and/or topology of polished substrate can be controlled based on the wearing and tearing of retainer ring 230 via manipulation burnishing parameters.In addition, due to the burnishing parameters of each carrier head 165A-165D of adjustable, the change of carrier head to carrier head can be minimized.
Embodiment described herein provides the method and apparatus of the monitoring of the retainer ring promoted in polishing system, with the useful life of the situation and/or assessment retainer ring of determining retainer ring.In one embodiment, a kind of equipment is provided.This equipment comprises: carrier head, this carrier head can be displaced into when substrate is fixed in carrier head between be used for polishing substrate at least one grinding stations between travel path in; With transfer station, this transfer station in order to transmit substrate to carrier head with transmit substrate from carrier head, carrier head has retainer ring and is arranged on the inductor in the travel path of carrier head, and inductor can operate the tolerance providing the situation that can indicate retainer ring.
In another embodiment, provide a kind of transfer station, transfer station to be arranged in polishing module and to be used to transmit substrate between substrate transfer device and at least one carrier head.Transfer station comprises: load cup assembly, loads cup assembly and has main body, and the size of main body can receive substrate and retainer ring at least partially, and retainer ring is couple at least one carrier head described; And inductor, inductor is arranged in main body, and inductor can operate the tolerance providing the situation that can indicate retainer ring, and wherein substrate comprises the first radius, and inductor to be positioned in main body and to be positioned at the second radius, and the second radius is greater than the first radius.
Although foregoing teachings is for embodiments of the invention, other and embodiment further of the present invention can be dreamed up under basic categories of the present invention not departing from.

Claims (20)

1., in order to monitor an equipment for the situation of retainer ring, described equipment comprises:
Carrier head, described carrier head can move in the travel path between at least one polishing block, is used for carrying out the substrate be fixed in described carrier head the polishing of described substrate; And
Transfer station, described transfer station passes in and out described carrier head in order to transmit described substrate, described carrier head has retainer ring and is arranged on the inductor in the described travel path of described carrier head, wherein, described inductor is arranged in the main body of loading cup assembly, the main body of described loading cup assembly is configured to support described substrate thereon, and described inductor can operate provides the tolerance of the situation indicating described retainer ring with time in the sight line being in described inductor at retainer ring.
2. as claimed in claim 1 in order to monitor the equipment of the situation of retainer ring, wherein said inductor is ultrasonic sensing device.
3. as claimed in claim 1 in order to monitor the equipment of the situation of retainer ring, wherein said inductor is vortex flow inductor.
4. as claimed in claim 1 in order to monitor the equipment of the situation of retainer ring, wherein said inductor is optical sensor.
5. as claimed in claim 4 in order to monitor the equipment of the situation of retainer ring, wherein said inductor comprises conveyer and receiver.
6. as claimed in claim 1 in order to monitor the equipment of the situation of retainer ring, wherein said transfer station comprises one or more nozzle, described nozzle and a water fluid communication.
7. as claimed in claim 2 in order to monitor the equipment of the situation of retainer ring, wherein said transfer station comprises main body, and the shape of described main body can containing fluid.
8. as claimed in claim 6 in order to monitor the equipment of the situation of retainer ring, wherein said substrate comprises the first radius, and described inductor is positioned at the second radius, and described second radius is greater than described first radius.
9. a transfer station, be arranged in polishing module and be used to transmit substrate between substrate transfer device and at least one carrier head, described transfer station comprises:
Load cup assembly, load cup assembly and have main body, the size of main body can receive substrate and retainer ring at least partially, and retainer ring is couple at least one carrier head described; And
Inductor, described inductor is arranged on the body, wherein said inductor is arranged in the described main body of described loading cup assembly, and described inductor can operate the tolerance to provide the situation indicating described retainer ring when described retainer ring is in the sight line of described inductor, wherein said substrate comprises the first radius, and described inductor is located on the body and is in the second radius, and described second radius is greater than described first radius.
10. transfer station as claimed in claim 9, wherein said inductor is ultrasonic sensing device.
11. transfer stations as claimed in claim 9, wherein said inductor is vortex flow inductor.
12. transfer stations as claimed in claim 9, wherein said inductor is optical sensor.
13. transfer stations as claimed in claim 12, wherein said inductor comprises conveyer and receiver.
14. transfer stations as claimed in claim 9, wherein said main body comprises one or more nozzle, described nozzle and a water fluid communication.
15. 1 kinds in order to monitor the method at least one surface of retainer ring, described retainer ring is couple to carrier head, and described method comprises following steps:
Mobile described carrier head, make the contiguous transformer device be arranged in polishing module of described carrier head, wherein said transformer device is arranged in the main body of loading cup assembly, and the main body of described loading cup assembly is configured to supporting substrate thereon;
In described loading cup assembly, described transformer device is activated when described retainer ring is in the sight line of described transformer device;
Energy is transmitted towards described retainer ring from described transformer device;
Receive the energy reflected from described retainer ring; And
Based on the energy of described reception, determine the situation of described retainer ring.
16. methods as claimed in claim 15, wherein to transmit with the energy that receives be sound wave.
17. methods as claimed in claim 15, wherein to transmit with the energy that receives be optical signalling.
18. methods as claimed in claim 15, wherein to transmit with the energy that receives be magnetic field.
19. methods as claimed in claim 15, wherein said energy transmits via liquid and receives.
20. methods as claimed in claim 15, described method comprises following steps further:
Mobile described carrier head, make the contiguous loading cup assembly be arranged in described polishing module of described carrier head, described transformer device is arranged in the main body of described loading cup assembly.
CN201180007401.4A 2010-07-26 2011-05-17 The thickness of retainer ring and the immediately monitoring method and apparatus of useful life Active CN102725830B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/843,793 2010-07-26
US12/843,793 US20120021671A1 (en) 2010-07-26 2010-07-26 Real-time monitoring of retaining ring thickness and lifetime
PCT/US2011/036731 WO2012018425A2 (en) 2010-07-26 2011-05-17 Real-time monitoring of retaining ring thickness and lifetime

Publications (2)

Publication Number Publication Date
CN102725830A CN102725830A (en) 2012-10-10
CN102725830B true CN102725830B (en) 2016-03-16

Family

ID=45494015

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180007401.4A Active CN102725830B (en) 2010-07-26 2011-05-17 The thickness of retainer ring and the immediately monitoring method and apparatus of useful life

Country Status (6)

Country Link
US (1) US20120021671A1 (en)
JP (1) JP2013532588A (en)
KR (1) KR101754855B1 (en)
CN (1) CN102725830B (en)
TW (1) TWI530359B (en)
WO (1) WO2012018425A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381904B (en) * 2009-12-03 2013-01-11 Nat Univ Chung Cheng The method of detecting the grinding characteristics and service life of the polishing pad
KR101902049B1 (en) * 2012-01-25 2018-09-27 어플라이드 머티어리얼스, 인코포레이티드 Retaining ring monitoring and control of pressure
US9067295B2 (en) * 2012-07-25 2015-06-30 Applied Materials, Inc. Monitoring retaining ring thickness and pressure control
US9242338B2 (en) * 2013-10-22 2016-01-26 Globalfoundries Singapore Pte. Ltd. CMP head structure
US9227294B2 (en) * 2013-12-31 2016-01-05 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for chemical mechanical polishing
JP2015188955A (en) 2014-03-27 2015-11-02 株式会社荏原製作所 Polishing device
KR102323430B1 (en) * 2014-03-31 2021-11-09 가부시키가이샤 에바라 세이사꾸쇼 Polishing apparatus and polishing method
JP6344950B2 (en) * 2014-03-31 2018-06-20 株式会社荏原製作所 Polishing apparatus and polishing method
US9878421B2 (en) * 2014-06-16 2018-01-30 Applied Materials, Inc. Chemical mechanical polishing retaining ring with integrated sensor
ES2729270T3 (en) * 2015-01-09 2019-10-31 Ironburg Inventions Ltd Game Console Controller
CN105397618B (en) * 2015-10-20 2018-03-06 上海华力微电子有限公司 Retainer ring for work-table of chemicomechanical grinding mill
KR102461598B1 (en) * 2015-12-18 2022-11-01 주식회사 케이씨텍 Apparatus of loading substrate in chemical mechanical polishing system
JP6577385B2 (en) * 2016-02-12 2019-09-18 株式会社荏原製作所 Substrate holding module, substrate processing apparatus, and substrate processing method
KR20200120960A (en) * 2018-03-13 2020-10-22 어플라이드 머티어리얼스, 인코포레이티드 Monitoring of consumable parts in chemical mechanical polishers
CN108716899B (en) * 2018-06-27 2020-04-10 山东天厚石油科技有限责任公司 Non-contact ultrasonic thickness gauge with high detection precision
JP7220648B2 (en) * 2019-12-20 2023-02-10 株式会社荏原製作所 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
US11705354B2 (en) 2020-07-10 2023-07-18 Applied Materials, Inc. Substrate handling systems
US20220184771A1 (en) * 2020-12-14 2022-06-16 Applied Materials, Inc. Polishing system apparatus and methods for defect reduction at a substrate edge
WO2023023444A1 (en) * 2021-08-17 2023-02-23 Tokyo Electron Limited Optical sensors for measuring properties of consumable parts in a semiconductor plasma processing chamber

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738574A (en) * 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US6110025A (en) * 1997-05-07 2000-08-29 Obsidian, Inc. Containment ring for substrate carrier apparatus
US6354928B1 (en) * 2000-04-21 2002-03-12 Agere Systems Guardian Corp. Polishing apparatus with carrier ring and carrier head employing like polarities
US6579151B2 (en) * 2001-08-02 2003-06-17 Taiwan Semiconductor Manufacturing Co., Ltd Retaining ring with active edge-profile control by piezoelectric actuator/sensors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4056970A (en) * 1975-10-30 1977-11-08 Yeda Research And Development Co., Ltd. Ultrasonic velocity and thickness gage
EP0049956A1 (en) * 1980-10-10 1982-04-21 Imperial Chemical Industries Plc Ultrasonic identification of damage in lined structures
US5343750A (en) * 1991-11-25 1994-09-06 General Electric Company Manual ultrasonic scanner for complex surfaces
JP2000153445A (en) * 1998-11-19 2000-06-06 Seiko Epson Corp Dresser for polishing device
US6390908B1 (en) * 1999-07-01 2002-05-21 Applied Materials, Inc. Determining when to replace a retaining ring used in substrate polishing operations
JP2001223190A (en) * 2000-02-08 2001-08-17 Hitachi Ltd Method and device for evaluating surface state of polishing pad, and method and device for manufacturing thin-film device
JP2002367941A (en) * 2001-06-08 2002-12-20 Hitachi Ltd Method for manufacturing semiconductor integrated circuit device
TW545580U (en) * 2002-06-07 2003-08-01 Nanya Technology Corp CMP device of measuring apparatus with a notched size for measuring the guide ring of wafer edge
US6964597B2 (en) * 2003-06-27 2005-11-15 Khuu's Inc. Retaining ring with trigger for chemical mechanical polishing apparatus
TWI368555B (en) * 2004-11-01 2012-07-21 Ebara Corp Polishing apparatus
JP4814677B2 (en) * 2006-03-31 2011-11-16 株式会社荏原製作所 Substrate holding device and polishing device
JP2007287787A (en) * 2006-04-13 2007-11-01 Elpida Memory Inc Method and equipment for manufacturing semiconductor device
JP2009260142A (en) * 2008-04-18 2009-11-05 Panasonic Corp Wafer-polishing apparatus and wafer-polishing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738574A (en) * 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US6110025A (en) * 1997-05-07 2000-08-29 Obsidian, Inc. Containment ring for substrate carrier apparatus
US6354928B1 (en) * 2000-04-21 2002-03-12 Agere Systems Guardian Corp. Polishing apparatus with carrier ring and carrier head employing like polarities
US6579151B2 (en) * 2001-08-02 2003-06-17 Taiwan Semiconductor Manufacturing Co., Ltd Retaining ring with active edge-profile control by piezoelectric actuator/sensors

Also Published As

Publication number Publication date
TWI530359B (en) 2016-04-21
WO2012018425A3 (en) 2012-05-18
KR101754855B1 (en) 2017-07-06
KR20130088738A (en) 2013-08-08
CN102725830A (en) 2012-10-10
JP2013532588A (en) 2013-08-19
US20120021671A1 (en) 2012-01-26
TW201204509A (en) 2012-02-01
WO2012018425A2 (en) 2012-02-09

Similar Documents

Publication Publication Date Title
CN102725830B (en) The thickness of retainer ring and the immediately monitoring method and apparatus of useful life
JP4994227B2 (en) Polishing apparatus and polishing method
CN106256016B (en) Substrate processing apparatus and substrate processing system
JP6010100B2 (en) Substrate processing apparatus and substrate processing method
JP2019162716A (en) Polishing apparatus and polishing method
CN106471607B (en) Compatible polishing pad and polishing module
US20200282506A1 (en) Spiral and concentric movement designed for cmp location specific polish (lsp)
JP2015012200A (en) Substrate processing apparatus
TWI702114B (en) Polishing system with local area rate control
CN106463384B (en) Modifying a substrate thickness profile
US20220219285A1 (en) Chemical mechanical polishing method
US9573241B2 (en) Polishing apparatus and polishing method
WO2015171468A1 (en) Modifying substrate thickness profiles
US7699972B2 (en) Method and apparatus for evaluating polishing pad conditioning
KR20020032701A (en) the profile conditioning method of polishing pad and CMP equipment there of
KR20240017909A (en) Method for detecting chemical mechanical polishing conditioning disc orientation
KR20110015996A (en) Substrate polishing apparatus and method of polishing substrate using the same
KR20110027114A (en) Substrate polishing apparatus and method of polishing substrate using the same
Tucker Equipment used in cmp processes

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant