CN102758185A - Flow divider - Google Patents

Flow divider Download PDF

Info

Publication number
CN102758185A
CN102758185A CN2011101106758A CN201110110675A CN102758185A CN 102758185 A CN102758185 A CN 102758185A CN 2011101106758 A CN2011101106758 A CN 2011101106758A CN 201110110675 A CN201110110675 A CN 201110110675A CN 102758185 A CN102758185 A CN 102758185A
Authority
CN
China
Prior art keywords
splitter
metal cap
gas
pivoted frame
bleeding point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011101106758A
Other languages
Chinese (zh)
Inventor
姜传华
黄义均
潘海波
李旭
陈甲林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Futaihong Precision Industry Co Ltd
Original Assignee
Shenzhen Futaihong Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Futaihong Precision Industry Co Ltd filed Critical Shenzhen Futaihong Precision Industry Co Ltd
Priority to CN2011101106758A priority Critical patent/CN102758185A/en
Priority to TW100116176A priority patent/TWI503438B/en
Priority to US13/274,538 priority patent/US20120273346A1/en
Publication of CN102758185A publication Critical patent/CN102758185A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3447Collimators, shutters, apertures

Abstract

The invention discloses a flow divider which is applied to a vacuum sputtering device. The flow divider comprises a machine body and a metal cover arranged on the machine body. A gas suction port is formed on the machine body, and the metal cover is used for covering the gas suction port. The metal cover is formed with a plurality of through holes for enabling gas to pass. A plurality of baffle plates are arranged on the metal cover at intervals, and the baffle plates can block part of the through holes so as to adjust gas entering into the gas suction port. The flow divider can adjust the uniform distribution of gas flow, effectively expand an effective coating area and conveniently coat a plurality of workpieces once by arranging the baffle plates on the metal cover with the holes at intervals.

Description

Splitter
Technical field
The present invention relates to a kind of splitter, relate in particular to a kind of splitter that is applied to vacuum splashing and plating equipment.
Background technology
The common metal plated film mostly adopts vacuum splashing and plating equipment to carry out sputter; Basic principle is to utilize photoglow (glow discharge) with argon gas (Ar) ionic bombardment target (target) surface in a vacuum; Positively charged ion in the electricity slurry quickens to rush at as by the negative electrode surface of sputter material, and the material that makes target flies out and is deposited on and forms film on the workpiece.The character of the film that vacuum splashing and plating forms, uniformity coefficient all than evaporated film come good, therefore be used widely.Because gas is difficult in Vakuumkammer fully evenly, can only the part even relatively, so there is a plated film service area.The film quality that space beyond this plated film service area forms does not just reach requirement.But the plated film service area of existing vacuum splashing and plating equipment is less, once is difficult to the more workpiece of sputter.
Summary of the invention
To the problems referred to above, be necessary to provide the splitter that can enlarge the plated film service area.
A kind of splitter is applied to vacuum splashing and plating equipment, and it comprises body and the metal cap of being located at body; This body is offered bleeding point, and this metal cap covers this bleeding point; This metal cap is offered some through holes and is passed through by gas; At interval some baffle plates are set on this metal cap, the said through hole of these baffle plate shield portions is with the gas of adjustment entering bleeding point.
Above-mentioned splitter is provided with baffle plate through interval on metal cap with holes, thereby the uniform distribution of adjustment air-flow has effectively enlarged the plated film effective area, conveniently once a plurality of workpiece is carried out plated film.
Description of drawings
Fig. 1 is the cross-sectional schematic of preferred embodiments splitter of the present invention;
Fig. 2 is the schematic perspective view of metal cap shown in Figure 1;
Fig. 3 is the sectional view of splitter shown in Figure 1 along the III-III line.
The main element nomenclature
Splitter 100
Body 10
Containing cavity 12
Pivoted frame 14
Montant 142
Support 144
Metal cap 20
Through hole 22
Baffle plate 30
Inlet pipe 40
Pin hole 42
Bleeding point 50
Regulating mechanism 60
The metal cap width W1
The bleeding point width W3
Metal cap thickness D1
Metal cap length L1
Baffle length L2
Following embodiment will combine above-mentioned accompanying drawing to further specify the present invention.
Embodiment
See also Fig. 1, splitter 100 of the present invention is applied in vacuum splashing and plating equipment (figure does not show), and it comprises body 10 and metal cap 20.
This body 10 surrounds a containing cavity 12, and this containing cavity 12 is connected with vacuum unit.These body 10 1 sides are offered a bleeding point 50, are used for gas is discharged containing cavity 12.
One end of this body 10 be provided with one be contained in containing cavity 12 pivoted frame 14, this pivoted frame 14 comprises the some montants 142 that are provided with at interval, every montant 142 is provided with some supports 144.These supports 144 are arranged side by side, and are used for fixing workpiece to be coated (figure does not show).
Please consult Fig. 2 and Fig. 3 simultaneously, this metal cap 20 is fixed on a side that is positioned at containing cavity 12 of body 10 and covers on simultaneously on the bleeding point 50.This metal cap 20 is netted, is provided with many through holes 22, and gas gets into bleeding point 50 through these through holes 22.The diameter range of these through holes 22 is 0.5mm-50mm, and hole width between centers scope is 2mm-50mm.This metal cap width W 1 is than bleeding point width W 10mm-300mm more than 3, and metal cap thickness D1 scope is 0.5mm-10mm.
At interval some baffle plates 30 are set on this metal cap 20, these baffle length L2 is suitable with metal cap width W 1, and shield portions through hole 22 flows directly into bleeding point 50 in order to barrier gas, thereby regulates the distribution of air-flow.Metal cap 20 is provided with regulating mechanism 60, can moving stop 30 through this regulating mechanism 60, thus the spacing of controllable register 30.The spacing range of baffle plate 30 is 10 mm-400mm, and the width of baffle plate designs as required.
This body 10 is provided with inlet pipe 40 with bleeding point 50 relative sides.The quantity of this inlet pipe 40 can be one or more, and is roughly parallel with montant 142.This inlet pipe 40 is offered some pin holes 42 at interval, and gas flows out from these pin holes 42, uniformly at containing cavity 12 internal diffusion.
Be provided with metal targets (figure does not show) in containing cavity 12 bottoms of body 10, this target can be titanium (Ti), chromium (Cr), nickel (Ni), zinc (Zr), aluminium (Al), titanium aluminide (TiAl).This target 70 is connected with power supply, is negative voltage during work.This embodiment target 70 is arranged on metal cap 20 2 sides.
During use, each workpiece is hung on the support 144 and along with pivoted frame 14 rotates, the air of containing cavity 12 extracted out, form Vakuumkammer.Inlet pipe 40 feeds argon gas (Ar), under the power supply effect, produces direct current glow discharge, and Ar is ionized into Ar +, form plasma body.Target 70 is a negative voltage, under electric field action, and Ar +Be accelerated and obtain very that high-energy removes to bombard target 70, sputter goes out target 70 atoms, and target 70 atoms fly to workpiece surface deposition film forming.Therebetween; Position and spacing through bleeding regulating mouth 50 metal caps 20 overhead gages 30 are come accurately control air-flow distribution; Both realized whole stove high uniformity plated film, and can slow down fast degree ﹐ that film-coating workpiece heating heat propagates to bleeding point 50 again and reduce heat loss ﹐ and reduced energy consumption.
In order to adjust the color of plated film, when feeding argon gas, can be mingled with among nitrogen (N2), acetylene (C2H2), methane (CH4), oxygen (O2), the hydrogen (H2) one or more.
The pivoted frame 14 of this embodiment is made by electro-conductive material, and is connected with power supply, thereby makes the workpiece that hang over above the support 144 form negative pressure, helps adsorbing target 70 atoms.
The shape and the structure that are appreciated that pivoted frame 14 can be adjusted as required, can change like interval, the quantity of montant 142 and support 144.

Claims (9)

1. a splitter is applied to vacuum splashing and plating equipment, it is characterized in that: this splitter comprises body and the metal cap of being located at body, and this body is offered bleeding point, and this metal cap covers this bleeding point; This metal cap is offered some through holes and is passed through by gas; At interval some baffle plates are set on this metal cap, the said through hole of these baffle plate shield portions is with the gas of adjustment entering bleeding point.
2. splitter as claimed in claim 1 is characterized in that: this metal cap is provided with regulating mechanism, and this baffle plate is adjusted at the position of this metal cap through this regulating mechanism.
3. splitter as claimed in claim 2 is characterized in that: the diameter range of this through hole is 0.5mm-50mm, and hole width between centers scope is 2mm-50mm.
4. splitter as claimed in claim 3 is characterized in that: the width of this metal cap is than the wide 10mm-300mm of bleeding point, and the thickness range of metal cap is 0.5mm-10mm.
5. like each described splitter of claim 1 to 4, it is characterized in that: this body surrounds a containing cavity, in this containing cavity pivoted frame is set.
6. splitter as claimed in claim 5 is characterized in that: this containing cavity is provided with inlet pipe between this body and pivoted frame, and this inlet pipe is offered some pin holes at interval.
7. splitter as claimed in claim 6 is characterized in that: this pivoted frame comprises the montant that is provided with at interval, and every montant is provided with some supports.
8. splitter as claimed in claim 5 is characterized in that: this pivoted frame is processed by conductive material, and this pivoted frame is connected with power supply, forms negative voltage.
9. splitter as claimed in claim 1 is characterized in that: this body is positioned at metal cap two sides and is provided with target.
CN2011101106758A 2011-04-29 2011-04-29 Flow divider Pending CN102758185A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2011101106758A CN102758185A (en) 2011-04-29 2011-04-29 Flow divider
TW100116176A TWI503438B (en) 2011-04-29 2011-05-09 Current divider
US13/274,538 US20120273346A1 (en) 2011-04-29 2011-10-17 Flow divider system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011101106758A CN102758185A (en) 2011-04-29 2011-04-29 Flow divider

Publications (1)

Publication Number Publication Date
CN102758185A true CN102758185A (en) 2012-10-31

Family

ID=47052830

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011101106758A Pending CN102758185A (en) 2011-04-29 2011-04-29 Flow divider

Country Status (3)

Country Link
US (1) US20120273346A1 (en)
CN (1) CN102758185A (en)
TW (1) TWI503438B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108728795A (en) * 2017-04-13 2018-11-02 北京北方华创微电子装备有限公司 A kind of process equipment
CN110684963A (en) * 2019-10-21 2020-01-14 江苏菲沃泰纳米科技有限公司 Airflow dispersion device for coating equipment and application thereof
WO2021057922A1 (en) * 2019-09-29 2021-04-01 宝山钢铁股份有限公司 Vacuum coating device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115537755A (en) * 2022-09-12 2022-12-30 浙江海量纳米科技股份有限公司 Improved PVD coating rotating stand structure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090941A (en) * 1977-03-18 1978-05-23 United Technologies Corporation Cathode sputtering apparatus
US4798663A (en) * 1985-02-01 1989-01-17 Leybold-Heraeus Gmbh Sputtering installation for the reactive coating of a substrate with hard materials
US6228234B1 (en) * 1998-01-05 2001-05-08 Sony Corporation Apparatus for sputtering
US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
US7109660B2 (en) * 2002-03-29 2006-09-19 Tokyo Electron Limited Plasma processing device and baffle plate thereof
US7648610B2 (en) * 1999-12-24 2010-01-19 Tokyo Electron Limited Baffle plate, apparatus for producing the same, method of producing the same, and gas processing apparatus containing baffle plate
CN101919041A (en) * 2008-01-16 2010-12-15 索绍股份有限公司 Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
TW200907085A (en) * 2007-08-07 2009-02-16 E Heng Technology Co Ltd Assistant guiding system used in vacuum sputtering device
TWM341702U (en) * 2008-03-14 2008-10-01 Bay Zu Prec Co Ltd Gas feeding apparatus of vacuum sputtering equipment

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090941A (en) * 1977-03-18 1978-05-23 United Technologies Corporation Cathode sputtering apparatus
US4798663A (en) * 1985-02-01 1989-01-17 Leybold-Heraeus Gmbh Sputtering installation for the reactive coating of a substrate with hard materials
US6228234B1 (en) * 1998-01-05 2001-05-08 Sony Corporation Apparatus for sputtering
US7648610B2 (en) * 1999-12-24 2010-01-19 Tokyo Electron Limited Baffle plate, apparatus for producing the same, method of producing the same, and gas processing apparatus containing baffle plate
US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
US7109660B2 (en) * 2002-03-29 2006-09-19 Tokyo Electron Limited Plasma processing device and baffle plate thereof
CN101919041A (en) * 2008-01-16 2010-12-15 索绍股份有限公司 Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108728795A (en) * 2017-04-13 2018-11-02 北京北方华创微电子装备有限公司 A kind of process equipment
CN108728795B (en) * 2017-04-13 2021-06-08 北京北方华创微电子装备有限公司 Process equipment
WO2021057922A1 (en) * 2019-09-29 2021-04-01 宝山钢铁股份有限公司 Vacuum coating device
CN110684963A (en) * 2019-10-21 2020-01-14 江苏菲沃泰纳米科技有限公司 Airflow dispersion device for coating equipment and application thereof

Also Published As

Publication number Publication date
TW201243087A (en) 2012-11-01
TWI503438B (en) 2015-10-11
US20120273346A1 (en) 2012-11-01

Similar Documents

Publication Publication Date Title
CN102758185A (en) Flow divider
CN105088150A (en) Multilevel magnetic field arc ion plating method with adjustable transmission directions
JP2012097291A (en) Plasma cvd device
CN105154838A (en) Method for depositing film through high ionization rate high power pulse magnetron sputtering
TW201341562A (en) Sputtering device
CN107245701A (en) A kind of many target material magnetic sputtering winding film coating machines and film plating process
CN109055901A (en) A kind of device and technique improving hard coat and substrate binding force
US20140346037A1 (en) Sputter device
CN104775102B (en) The vacuum coating system that volume to volume magnetic control sputtering cathode is combined with column multi-arc source
CN201132848Y (en) Device for depositing high-quality film by arc ion plating
CN106637096B (en) The multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle
RU121812U1 (en) CATHODE-SPRAY ASSEMBLY OF MAGNETRON (OPTIONS)
CN106676483B (en) Liner straight tube and the compound multi-stage magnetic field arc ions electroplating method of perforated baffle
CN204644456U (en) The vacuum coating film equipment that volume to volume magnetic control sputtering cathode combines with column multi-arc source
CA2860079C (en) Low temperature arc ion plating coating
CN100591797C (en) Device for promoting deposit film quality of arc ion plating
CN210248394U (en) Heating wire, atomizing device and electron cigarette
CN103031527A (en) Magnetron sputtering coating device
CN106367724A (en) Sputtering device
CN108456862B (en) Metal ion source and using method thereof
CN209468497U (en) The liner positive bias perforated baffle device of multi-stage magnetic field arc ion plating
CN111663102A (en) Evaporation equipment and evaporation process
CN109989020A (en) The arc ion plating of combination field and liner conical pipe and perforated baffle combined filtration
TWM519143U (en) Gas feeding apparatus and sputtering equipment
CN109989005A (en) The arc ion plating of combination field and liner bias straight tube composite filter

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20121031