CN102774064A - Sensitive adsorption film and its manufacturing method - Google Patents

Sensitive adsorption film and its manufacturing method Download PDF

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Publication number
CN102774064A
CN102774064A CN2011101222829A CN201110122282A CN102774064A CN 102774064 A CN102774064 A CN 102774064A CN 2011101222829 A CN2011101222829 A CN 2011101222829A CN 201110122282 A CN201110122282 A CN 201110122282A CN 102774064 A CN102774064 A CN 102774064A
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film
layer metal
responsive
bio
adsorbed
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CN102774064B (en
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李冬梅
刘明
谢常青
闫学峰
叶甜春
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Abstract

The invention discloses a sensitive adsorption film on a surface acoustic wave gas sensor, and its manufacturing method. The sensitive adsorption film is arranged on a piezoelectric film between adjacent interdigital energy transducers of the surface acoustic wave gas sensor, and comprises three layers of metal films deposited on the piezoelectric film, wherein the three layers of metal films comprise a BiO2 film, a Bi film and the BiO2 film. Through the embodiment in the invention, the sensitivity and the selectivity of the sensitive adsorption film on the surface acoustic wave gas sensor to an NO2 gas are improved.

Description

A kind of responsive adsorbed film and manufacturing approach thereof
Technical field
The present invention relates to technical field of sensor manufacture, responsive adsorbed film and manufacturing approach thereof on particularly a kind of sonic surface wave gas sensors.
Background technology
Surface acoustic wave (SAW, Surface Acoustic Wave) is a kind of sound wave of propagating along the elastic matrix surface.Because surface acoustic wave carries out transducing and propagation at dielectric surface, so the injection of information, extraction, processing all can realize easily.
The basic principle of sonic surface wave gas sensors is; The absorption that the responsive adsorbed film that is covered through SAW device surface is treated side gas causes the variation of surface acoustic wave sensor speed; Thereby change the frequency of oscillation of SAW oscillator, realize monitoring and measurement gas with this.Compare with the sensor of other types; Sonic surface wave gas sensors has a lot of excellent characteristic; Have that volume is little, in light weight, precision is high, resolution ratio is high, antijamming capability is strong, characteristics such as highly sensitive, valid analysing range good linearity; Can utilize the plane manufacture craft in the integrated circuit, can realize microminiaturization and integrated, be suitable for producing low-costly and in high volume.
Responsive adsorbed film is the most direct responsive part of SAW gas sensor, generally to different types of chemical gas, needs to use the film of various different materials.Selectivity sensitive thin film preferably can only be adsorbed gas to be measured in mist, and shields other gas.Thus it is clear that, be basic demand to sensitive thin film to the selective absorption of specific gas.Sensitive thin film has also determined the gas-selectively of SAW gas sensor to the selectivity of gas, and the gas-selectively of responsive adsorbed film has directly determined the performance quality of sensor.
Yet, through discovering of inventor, at present for surface acoustic wave NO 2Gas, responsive adsorbed film is unsatisfactory to the sensitivity and the selectivity of this gas on the sonic surface wave gas sensors, requires responsive adsorbed film to NO simultaneously 2Gas has strong absorption, desorption characteristic, and will lack gas response time and turnaround time.
Summary of the invention
The present invention provides a kind of responsive adsorbed film and manufacturing approach thereof, with improve on the sonic surface wave gas sensors should the sensitivity adsorbed film to NO 2The sensitiveness of gas and selectivity.
The invention provides a kind of responsive adsorbed film, be arranged on the sonic surface wave gas sensors on the piezoelectric membrane between the adjacent slotting finger transducer, comprising: be deposited on the three-layer metal film on the said piezoelectric membrane, said three-layer metal film is followed successively by BiO 2Film, Bi film and BiO 2Film.
Preferably, the gross thickness of said three-layer metal film is 100～500nm.
Preferably, said BiO 2The thickness of film is 50～400nm; Then the thickness of Bi film is 50～100nm.
Preferably, said three-layer metal depositing of thin film mode is thermal evaporation or magnetron sputtering mode.
A kind of preparation method of responsive adsorbed film comprises:
Deposition three-layer metal film on the piezoelectric membrane between the adjacent slotting finger transducer on the sonic surface wave gas sensors, said three-layer metal film is followed successively by BiO 2Film, Bi film and BiO 2Film.
Preferably, the gross thickness of said three-layer metal film is 100～500nm.
Preferably, said BiO 2The thickness of film is 50～400nm; Then the thickness of Bi film is 50～100nm.
Preferably, said three-layer metal depositing of thin film mode is thermal evaporation or magnetron sputtering mode.
Compared with prior art, the present invention has the following advantages:
In the embodiment of the invention, the responsive adsorbed film of deposition three-layer metal on the piezoelectric membrane between the adjacent slotting finger transducer on the piezoelectric membrane, said three-layer metal film is followed successively by BiO 2Film, Bi film and BiO 2Film, through this three-layer metal film, can improve greatly should the sensitivity adsorbed film to NO 2The sensitiveness of gas and selectivity.
Description of drawings
A kind of sonic surface wave gas sensors structural representation that Fig. 1 provides for the embodiment of the invention;
The manufacturing approach schematic flow sheet of a kind of sonic surface wave gas sensors that Fig. 2 provides for the embodiment of the invention;
The part that Fig. 3 provides for the embodiment of the invention is coated with the substrate sketch map of piezoelectric membrane;
The plating that Fig. 4 provides for the embodiment of the invention is inserted and is referred to material substrate sketch map afterwards;
The formation array that Fig. 5 provides for the embodiment of the invention is inserted the substrate sketch map after the finger transducer;
The deposition three-layer metal film sketch map that Fig. 6 provides for the embodiment of the invention.
The specific embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Processing method of the present invention can be widely used in the every field; And many suitable material capable of using; Be to explain below through concrete embodiment; Certainly the present invention is not limited to this specific embodiment, and the general replacement that the one of ordinary skilled in the art knew is encompassed in protection scope of the present invention far and away.
Secondly, the present invention utilizes sketch map to describe in detail, when the embodiment of the invention is detailed; For the ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, should be with this as to qualification of the present invention, in addition; In the making of reality, should comprise the three dimensions size of length, width and the degree of depth.
Embodiment one
The present invention proposes a kind of responsive adsorbed film, with improve should the sensitivity adsorbed film to NO 2The sensitiveness of gas and selectivity.This sensitivity adsorbed film is arranged on the sonic surface wave gas sensors on the piezoelectric membrane between the adjacent slotting finger transducer, and comprising: be deposited on the three-layer metal film on the said piezoelectric membrane, said three-layer metal film is followed successively by BiO 2Film, Bi film and BiO 2Film.
As shown in Figure 1, the structural representation of a kind of sonic surface wave gas sensors that provides for the embodiment of the invention.This sonic surface wave gas sensors specifically can comprise: be arranged at piezoelectric membrane 11 in the substrate 10, be arranged at transducer membrane 14 on the said piezoelectric membrane 11, be arranged at the three-layer metal film between the adjacent transducer film 14, this three-layer metal film is followed successively by BiO 2 Film 12, Bi film 13 and BiO 2 Film 12.
Present sonic surface wave gas sensors has two kinds: resonator type and delay line type.Usually, responsive adsorbed film is arranged on the propagation path or SAW resonator of surface wave delay line, between the adjacent transducer.Because SAW device need be made having on the substrate of piezoelectric property, therefore, need be pressure-plated with conductive film waiting to be provided with in the substrate of inserting finger transducer.Usually, said piezoelectric membrane is the material with piezoelectricity such as ZnO.
Transducer membrane is the material that can comprise such as adsorbed gases such as Al, Au or Pt among Fig. 1.Be used to form slotting finger transducer.Between the adjacent transducer film,
During practical implementation,, can in substrate, plate the multi-layer piezoelectric material repeatedly in order to strengthen the piezoelectric property of substrate.The concrete number of plies of required piezoelectric can specifically be provided with according to the practical application scene by those skilled in the art.
In the embodiment of the invention, the gross thickness of said three-layer metal film is 100～500nm.
Wherein, said BiO 2The thickness of film is 50～400nm; Then the thickness of Bi film is 50～100nm.
In addition, said three-layer metal depositing of thin film mode is thermal evaporation or magnetron sputtering mode.
Through the responsive adsorbed film of deposition three-layer metal on the piezoelectric membrane between the adjacent slotting finger transducer on the piezoelectric membrane, said three-layer metal film is followed successively by BiO 2Film, Bi film and BiO 2Film, through this three-layer metal film, can improve greatly should the sensitivity adsorbed film to NO 2The sensitiveness of gas and selectivity.
Embodiment two
In the embodiment of the invention, show the preparation method of above-mentioned responsive adsorbed film, in the manufacturing process, deposition three-layer metal film on the piezoelectric membrane between the adjacent slotting finger transducer on the sonic surface wave gas sensors, said three-layer metal film is followed successively by BiO 2Film, Bi film and BiO 2Film.
Through the responsive adsorbed film of deposition three-layer metal on the piezoelectric membrane between the adjacent slotting finger transducer on the piezoelectric membrane, said three-layer metal film is followed successively by BiO 2Film, Bi film and BiO 2Film, through this three-layer metal film, can improve greatly should the sensitivity adsorbed film to NO 2The sensitiveness of gas and selectivity.
With the example that is fabricated to of sonic surface wave gas sensors, as shown in Figure 2, its manufacturing approach comprises following treatment step:
Step 101, choose substrate;
Step 102, in said substrate, plate piezoelectric membrane; The substrate that is coated with piezoelectric membrane is as shown in Figure 3, wherein 1 is depicted as substrate, and 2 are depicted as the piezoelectricity plated film;
Step 103, plating insert to refer to material on said piezoelectric membrane, and it is as shown in Figure 4 that the substrate that refers to after the material is inserted in plating, wherein 3 is depicted as to insert and refers to material;
Step 104, form array by said slotting finger material and insert finger transducer, as shown in Figure 5, wherein, 4 are depicted as array inserts finger transducer;
Step 105, on the piezoelectric membrane between the adjacent slotting finger transducer deposition three-layer metal film, as shown in Figure 6, this three-layer metal film is followed successively by BiO 2 Film 12, Bi film 13 and BiO 2 Film 12.
Need to prove that in the embodiment of the invention, the gross thickness of said three-layer metal film is 100～500nm.
Wherein, said BiO 2The thickness of film is 50～400nm; Then the thickness of Bi film is 50～100nm.
In addition, said three-layer metal depositing of thin film mode is thermal evaporation or magnetron sputtering mode.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.

Claims (8)

1. responsive adsorbed film is arranged on the sonic surface wave gas sensors on the piezoelectric membrane between the adjacent slotting finger transducer, it is characterized in that comprise: be deposited on the three-layer metal film on the said piezoelectric membrane, said three-layer metal film is followed successively by BiO 2Film, Bi film and BiO 2Film.
2. responsive adsorbed film according to claim 1 is characterized in that, the gross thickness of said three-layer metal film is 100～500nm.
3. responsive adsorbed film according to claim 2 is characterized in that, said BiO 2The thickness of film is 50～400nm; Then the thickness of Bi film is 50～100nm.
4. responsive adsorbed film according to claim 1 is characterized in that, said three-layer metal depositing of thin film mode is thermal evaporation or magnetron sputtering mode.
5. the preparation method of a responsive adsorbed film is characterized in that, comprising:
Deposition three-layer metal film on the piezoelectric membrane between the adjacent slotting finger transducer on the sonic surface wave gas sensors, said three-layer metal film is followed successively by BiO 2Film, Bi film and BiO 2Film.
6. responsive adsorbed film according to claim 5 is characterized in that, the gross thickness of said three-layer metal film is 100～500nm.
7. responsive adsorbed film according to claim 6 is characterized in that, said BiO 2The thickness of film is 50～400nm; Then the thickness of Bi film is 50～100nm.
8. responsive adsorbed film according to claim 5 is characterized in that, said three-layer metal depositing of thin film mode is thermal evaporation or magnetron sputtering mode.
CN201110122282.9A 2011-05-12 2011-05-12 Sensitive adsorption film and its manufacturing method Active CN102774064B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104638975A (en) * 2013-11-08 2015-05-20 中国科学院微电子研究所 Vibration energy collector and forming method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3810688A (en) * 1973-05-21 1974-05-14 A Ballman Optical waveguiding devices using monocrystalline materials of the sillenite family of bismuth oxides
JPS57166090A (en) * 1981-04-06 1982-10-13 Sumitomo Electric Ind Ltd Gamma phase bismuth oxide compound with thin film
JPS6176948A (en) * 1984-09-21 1986-04-19 Nec Corp Thin film gas detecting element
CN101726539A (en) * 2008-10-24 2010-06-09 中国科学院微电子研究所 Method for testing gas concentration by utilizing acoustic surface wave device
CN101726538A (en) * 2008-10-24 2010-06-09 中国科学院微电子研究所 Acoustic surface wave gas sensor and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3810688A (en) * 1973-05-21 1974-05-14 A Ballman Optical waveguiding devices using monocrystalline materials of the sillenite family of bismuth oxides
JPS57166090A (en) * 1981-04-06 1982-10-13 Sumitomo Electric Ind Ltd Gamma phase bismuth oxide compound with thin film
JPS6176948A (en) * 1984-09-21 1986-04-19 Nec Corp Thin film gas detecting element
CN101726539A (en) * 2008-10-24 2010-06-09 中国科学院微电子研究所 Method for testing gas concentration by utilizing acoustic surface wave device
CN101726538A (en) * 2008-10-24 2010-06-09 中国科学院微电子研究所 Acoustic surface wave gas sensor and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104638975A (en) * 2013-11-08 2015-05-20 中国科学院微电子研究所 Vibration energy collector and forming method thereof
CN104638975B (en) * 2013-11-08 2017-05-24 中国科学院微电子研究所 Vibration energy collector and forming method thereof

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