CN102774064B - Sensitive adsorption film and its manufacturing method - Google Patents
Sensitive adsorption film and its manufacturing method Download PDFInfo
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- CN102774064B CN102774064B CN201110122282.9A CN201110122282A CN102774064B CN 102774064 B CN102774064 B CN 102774064B CN 201110122282 A CN201110122282 A CN 201110122282A CN 102774064 B CN102774064 B CN 102774064B
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Abstract
The invention discloses a sensitive adsorption film on a surface acoustic wave gas sensor, and its manufacturing method. The sensitive adsorption film is arranged on a piezoelectric film between adjacent interdigital energy transducers of the surface acoustic wave gas sensor, and comprises three layers of metal films deposited on the piezoelectric film, wherein the three layers of metal films comprise a BiO2 film, a Bi film and the BiO2 film. Through the embodiment in the invention, the sensitivity and the selectivity of the sensitive adsorption film on the surface acoustic wave gas sensor to an NO2 gas are improved.
Description
Technical field
The present invention relates to technical field of sensor manufacture, the sensitive adsorption film particularly on a kind of sonic surface wave gas sensors and manufacture method thereof.
Background technology
Surface acoustic wave (SAW, Surface Acoustic Wave) is a kind of sound wave propagated along elastic matrix surface.Because surface acoustic wave carries out transducing and propagation at dielectric surface, so the injection of information, extraction, process all can realize easily.
The general principle of sonic surface wave gas sensors is, the absorption treating side gas by the surperficial sensitive adsorption film covered of SAW device causes the change of surface acoustic wave sensor speed, thus change the frequency of oscillation of SAW oscillator, realize monitoring to gas and measurement with this.Compared with the sensor of other types, sonic surface wave gas sensors has much excellent characteristic, have that volume is little, lightweight, precision is high, resolution ratio is high, antijamming capability is strong, the feature such as highly sensitive, valid analysing range good linearity, the plane manufacture craft in integrated circuit can be utilized, can realize microminiaturized and integrated, be suitable for producing low-costly and in high volume.
Sensitive adsorption film is the most direct non-sensitive part of SAW gas sensor, generally for different types of chemical gas, needs the film using various different materials.Selective good sensitive thin film can only adsorb gas to be measured in mist, and shields other gas.Visible, be the most basic demand to sensitive thin film to the selective absorption of specific gas.Sensitive thin film is to the selective gas-selectively also determining SAW gas sensor of gas, and the gas-selectively of sensitive adsorption film directly determines the performance quality of sensor.
But, found, at present for surface acoustic wave NO by the research of inventor
2gas, on sonic surface wave gas sensors, sensitive adsorption film is to the sensitivity of this gas and selective unsatisfactory, requires that sensitive adsorption film is to NO simultaneously
2gas has the attached characteristic of strong Adsorption and desorption, and to the gas response time and turnaround time short.
Summary of the invention
The invention provides a kind of sensitive adsorption film and manufacture method thereof, to improve on sonic surface wave gas sensors this sensitive adsorption film to NO
2the sensitiveness of gas and selective.
The invention provides a kind of sensitive adsorption film, be arranged on the piezoelectric membrane on sonic surface wave gas sensors between adjacent slotting finger transducer, comprise: be deposited on the three-layer metal film on described piezoelectric membrane, described three-layer metal film is followed successively by BiO
2film, Bi film and BiO
2film.
Preferably, the gross thickness of described three-layer metal film is 100 ~ 500nm.
Preferably, described BiO
2the thickness of film is 50 ~ 400nm; Then the thickness of Bi film is 50 ~ 100nm.
Preferably, the depositional mode of described three-layer metal film is thermal evaporation or magnetron sputtering mode.
A preparation method for sensitive adsorption film, comprising:
Piezoelectric membrane on sonic surface wave gas sensors between adjacent slotting finger transducer deposits three-layer metal film, and described three-layer metal film is followed successively by BiO
2film, Bi film and BiO
2film.
Preferably, the gross thickness of described three-layer metal film is 100 ~ 500nm.
Preferably, described BiO
2the thickness of film is 50 ~ 400nm; Then the thickness of Bi film is 50 ~ 100nm.
Preferably, the depositional mode of described three-layer metal film is thermal evaporation or magnetron sputtering mode.
Compared with prior art, the present invention has the following advantages:
In the embodiment of the present invention, the piezoelectric membrane on piezoelectric membrane between adjacent slotting finger transducer deposits three-layer metal sensitive adsorption film, described three-layer metal film is followed successively by BiO
2film, Bi film and BiO
2film, by this three-layer metal film, can improve this sensitive adsorption film greatly to NO
2the sensitiveness of gas and selective.
Accompanying drawing explanation
A kind of sonic surface wave gas sensors structural representation that Fig. 1 provides for the embodiment of the present invention;
The manufacture method schematic flow sheet of a kind of sonic surface wave gas sensors that Fig. 2 provides for the embodiment of the present invention;
Fig. 3 is coated with the substrate schematic diagram of piezoelectric membrane for part that the embodiment of the present invention provides;
Fig. 4 inserts the substrate schematic diagram referred to after material for plating that the embodiment of the present invention provides;
Fig. 5 for formation array that the embodiment of the present invention provides insert finger transducer after substrate schematic diagram;
The deposition three-layer metal film schematic diagram that Fig. 6 provides for the embodiment of the present invention.
Detailed description of the invention
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Processing method of the present invention can be widely used in every field; and many suitable materials can be utilized to make; here is illustrated by specific embodiment; certain the present invention is not limited to this specific embodiment, and the general replacement known by one of ordinary skilled in the art is encompassed in protection scope of the present invention far and away.
Secondly, the present invention utilizes schematic diagram to be described in detail, when describing the embodiment of the present invention in detail, for convenience of explanation, represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, should in this, as limitation of the invention, in addition, in the making of reality, the three-dimensional space of length, width and the degree of depth should be comprised.
Embodiment one
The present invention proposes a kind of sensitive adsorption film, to improve this sensitive adsorption film to NO
2the sensitiveness of gas and selective.This sensitive adsorption film is arranged on the piezoelectric membrane on sonic surface wave gas sensors between adjacent slotting finger transducer, comprising: be deposited on the three-layer metal film on described piezoelectric membrane, and described three-layer metal film is followed successively by BiO
2film, Bi film and BiO
2film.
As shown in Figure 1, the structural representation of a kind of sonic surface wave gas sensors provided for the embodiment of the present invention.This sonic surface wave gas sensors specifically can comprise: be arranged at the piezoelectric membrane 11 in substrate 10, be arranged at transducer membrane 14 on described piezoelectric membrane 11, be arranged at three-layer metal film between adjacent transducer film 14, this three-layer metal film is followed successively by BiO
2film 12, Bi film 13 and BiO
2film 12.
Current sonic surface wave gas sensors has two kinds: resonator type and delay line type.Usually, on the propagation path that sensitive adsorption film is arranged at surface wave delay line or SAW resonator, between adjacent transducer.Because SAW device needs to make on the substrate with piezoelectric property, therefore, need to be pressure-plated with conductive film in the substrate of slotting finger transducer to be placed.Usually, described piezoelectric membrane is the material with piezoelectricity of such as ZnO.
In Fig. 1, transducer membrane is the material that can comprise the adsorbed gases such as such as Al, Au or Pt.For the formation of slotting finger transducer.Between adjacent transducer film,
During concrete enforcement, in order to strengthen the piezoelectric property of substrate, can repeatedly plate multi-layer piezoelectric material in substrate.The concrete number of plies of required piezoelectric, specifically can be arranged according to practical application scene by those skilled in the art.
In the embodiment of the present invention, the gross thickness of described three-layer metal film is 100 ~ 500nm.
Wherein, described BiO
2the thickness of film is 50 ~ 400nm; Then the thickness of Bi film is 50 ~ 100nm.
In addition, the depositional mode of described three-layer metal film is thermal evaporation or magnetron sputtering mode.
By the piezoelectric membrane between slotting finger transducer adjacent on piezoelectric membrane deposits three-layer metal sensitive adsorption film, described three-layer metal film is followed successively by BiO
2film, Bi film and BiO
2film, by this three-layer metal film, can improve this sensitive adsorption film greatly to NO
2the sensitiveness of gas and selective.
Embodiment two
In the embodiment of the present invention, show the preparation method of above-mentioned sensitive adsorption film, in manufacturing process, the piezoelectric membrane on sonic surface wave gas sensors between adjacent slotting finger transducer deposits three-layer metal film, described three-layer metal film is followed successively by BiO
2film, Bi film and BiO
2film.
By the piezoelectric membrane between slotting finger transducer adjacent on piezoelectric membrane deposits three-layer metal sensitive adsorption film, described three-layer metal film is followed successively by BiO
2film, Bi film and BiO
2film, by this three-layer metal film, can improve this sensitive adsorption film greatly to NO
2the sensitiveness of gas and selective.
Be fabricated to example with sonic surface wave gas sensors, as shown in Figure 2, its manufacture method comprises following treatment step:
Step 101, choose substrate;
Step 102, be pressure-plated with conductive film on the substrate; Be coated with the substrate of piezoelectric membrane as shown in Figure 3, wherein 1 be depicted as substrate, 2 are depicted as piezoelectricity plated film;
Step 103, on described piezoelectric membrane plating insert and refer to material, plating is inserted and is referred to that substrate after material is as shown in Figure 4, wherein 3 is depicted as to insert and refers to material;
Step 104, form array insert finger transducer by described slotting finger material, as shown in Figure 5, wherein, 4 are depicted as array inserts finger transducer;
Step 105, piezoelectric membrane between adjacent slotting finger transducer deposit three-layer metal film, and as shown in Figure 6, this three-layer metal film is followed successively by BiO
2film 12, Bi film 13 and BiO
2film 12.
It should be noted that, in the embodiment of the present invention, the gross thickness of described three-layer metal film is 100 ~ 500nm.
Wherein, described BiO
2the thickness of film is 50 ~ 400nm; Then the thickness of Bi film is 50 ~ 100nm.
In addition, the depositional mode of described three-layer metal film is thermal evaporation or magnetron sputtering mode.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.
Claims (8)
1. a sensitive adsorption film, is arranged on the piezoelectric membrane on sonic surface wave gas sensors between adjacent slotting finger transducer, it is characterized in that, comprising: be deposited on the three-layer metal film on described piezoelectric membrane, and described three-layer metal film is followed successively by BiO
2film, Bi film and BiO
2film.
2. sensitive adsorption film according to claim 1, is characterized in that, the gross thickness of described three-layer metal film is 100 ~ 500nm.
3. sensitive adsorption film according to claim 2, is characterized in that, described BiO
2the thickness of film is 50 ~ 400nm; The thickness of Bi film is 50 ~ 100nm.
4. sensitive adsorption film according to claim 1, is characterized in that, the depositional mode of described three-layer metal film is thermal evaporation or magnetron sputtering mode.
5. a preparation method for sensitive adsorption film, is characterized in that, comprising:
Piezoelectric membrane on sonic surface wave gas sensors between adjacent slotting finger transducer deposits three-layer metal film, and described three-layer metal film is followed successively by BiO
2film, Bi film and BiO
2film.
6. the preparation method of sensitive adsorption film according to claim 5, is characterized in that, the gross thickness of described three-layer metal film is 100 ~ 500nm.
7. the preparation method of sensitive adsorption film according to claim 6, is characterized in that, described BiO
2the thickness of film is 50 ~ 400nm; The thickness of Bi film is 50 ~ 100nm.
8. the preparation method of sensitive adsorption film according to claim 5, is characterized in that, the depositional mode of described three-layer metal film is thermal evaporation or magnetron sputtering mode.
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|---|---|---|---|
| CN201110122282.9A CN102774064B (en) | 2011-05-12 | 2011-05-12 | Sensitive adsorption film and its manufacturing method |
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|---|---|---|---|
| CN201110122282.9A CN102774064B (en) | 2011-05-12 | 2011-05-12 | Sensitive adsorption film and its manufacturing method |
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| CN102774064B true CN102774064B (en) | 2015-04-01 |
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| CN104638975B (en) * | 2013-11-08 | 2017-05-24 | 中国科学院微电子研究所 | Vibration energy collector and forming method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3810688A (en) * | 1973-05-21 | 1974-05-14 | A Ballman | Optical waveguiding devices using monocrystalline materials of the sillenite family of bismuth oxides |
| CN101726538A (en) * | 2008-10-24 | 2010-06-09 | 中国科学院微电子研究所 | Acoustic surface wave gas sensor and manufacturing method thereof |
| CN101726539A (en) * | 2008-10-24 | 2010-06-09 | 中国科学院微电子研究所 | Method for testing gas concentration by utilizing acoustic surface wave device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57166090A (en) * | 1981-04-06 | 1982-10-13 | Sumitomo Electric Ind Ltd | Gamma phase bismuth oxide compound with thin film |
| JPS6176948A (en) * | 1984-09-21 | 1986-04-19 | Nec Corp | Thin film gas detecting element |
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2011
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3810688A (en) * | 1973-05-21 | 1974-05-14 | A Ballman | Optical waveguiding devices using monocrystalline materials of the sillenite family of bismuth oxides |
| CN101726538A (en) * | 2008-10-24 | 2010-06-09 | 中国科学院微电子研究所 | Acoustic surface wave gas sensor and manufacturing method thereof |
| CN101726539A (en) * | 2008-10-24 | 2010-06-09 | 中国科学院微电子研究所 | Method for testing gas concentration by utilizing acoustic surface wave device |
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