CN102844848A - 通过自由基成分化学气相沉积的共形层 - Google Patents
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Abstract
描述了用以由无碳的硅与氮的前驱物与自由基-氮的前驱物形成含有硅与氮的共形介电层(例如,硅-氮-氢(Si-N-H)膜)的方法、材料以及系统。无碳的硅与氮的前驱物主要藉由接触自由基-氮的前驱物而激发。因为硅与氮的膜在无碳情况下形成,因此可在较少孔形成以及较低体积收缩率下完成膜至硬化的氧化硅的转化。可将经沉积的含硅与氮的膜完全或部分转化为氧化硅,所述氧化硅容许共形介电层的光学特性成为可选择的。可在低温下进行含硅与氮的薄膜的沉积,以在基板沟槽中形成衬垫层。已发现低温衬垫层来增进湿润特性,并且所述低温衬垫层容许可流动的膜更完整地填充沟槽。
Description
相关申请的交叉引用
此申请要求2011年2月10日提出且名称为“通过自由基成分CVD的共形层(CONFORMAL LAYER BY RADICAL-COMPONENT CVD)”的美国专利申请第13/024,487号、2010年7月21日提出且名称为“使用非碳可流动的CVD工艺的氧化硅的形成(FORMATION OF SILICON OXIDE USINGNON-CARBON FLOWABLE CVD PROCESSES)”的美国专利申请第12/840,768号、以及2010年3月5日提出且名称为“通过自由基成分CVD的共形层(CONFORMAL LAYERS BY RADICAL-COMPONENT CVD)”的美国临时专利申请第61/311,061号的优先权。出于所有目的,这些申请的全部内容通过引用并入本文中。
背景技术
自从数十年前引进了半导体器件,半导体器件几何形状的尺寸已经显著地减小。现代半导体制造设备常规地制造具有45nm、32nm与28nm特征尺寸的器件,且正在发展并实现新设备以制造具有甚至更小几何形状的器件。减小的特征尺寸致使关于器件的结构特征具有减小的空间尺寸。关于器件的间隙与沟槽的宽度窄到间隙深度与器件宽度的纵横比变得高到足够使以介电材料来填充间隙更富有挑战性的程度。沉积的介电材料倾向于在间隙完全填满之前在顶部堵塞,从而在间隙中间产生空隙或缝隙。
数年来,已经发展许多技术来避免使介电材料堵塞间隙的顶部、或者“密封(heal)”已经形成的空隙或缝隙。一种方法以高度可流动的前驱物材料来开始,这些高度可流动的前驱物材料可形成在经图案化的基板表面上(例如,SOG沉积技术)。这些可流动的前驱物可流入并填充非常小的基板间隙,而不会形成空隙或弱的缝隙。
在某些应用中,基板间隙内部的表面可能不会被可流动的介电材料所润湿。举例而言,这倾向于在下方材料在高温下沉积时发生。因此,需要有新的沉积工艺以及材料,以在结构化基板上形成介电材料,致使可流动的材料可更容易地渗透基板表面中的间隙。本申请满足了这种和其它需求。
发明内容
描述了用以由无碳的硅与氮的前驱物与自由基-氮的前驱物形成含有硅与氮的共形介电层(例如,硅-氮-氢(Si-N-H)膜)的方法、材料以及系统。无碳的硅与氮的前驱物主要藉由接触自由基-氮的前驱物而激发。因为硅与氮的膜在无碳情况下形成,因此可在较少孔形成以及较低体积收缩率下完成膜至硬化的氧化硅的转化。可将经沉积的含硅与氮的膜完全或部分转化为氧化硅,所述氧化硅容许共形介电层的光学特性成为可选择的。可在低温下进行含硅与氮的薄膜的沉积,以在基板沟槽中形成衬垫层。已发现低温衬垫层来增进湿润特性,并且所述低温衬垫层容许可流动的膜更完整地填充沟槽。
本发明的实施例包括在基板处理腔室中的基板处理区域中的经图案化的基板上形成共形含硅与氮的层的方法。这些方法包括将无碳含硅与氮的前驱物与自由基-氮的前驱物混合。藉由接触自由基-氮的前驱物而主要地激发无碳含硅与氮的前驱物。这些方法还包括在经图案化的基板上沉积具有共形层厚度的共形含硅与氮的层。
本发明的实施例还包括形成具有降低的体积收缩率的含硅层的方法。这些方法包括移转含有间隙的基板,以及在基板上沉积共形含硅与氮的层。共形含硅与氮的层具有共形性。这些方法还包括在共形含硅与氮的层上沉积可流动的含硅与氮的层。含硅层包含共形含硅与氮的层以及可流动的含硅与氮的层二者。
额外的实施例与特征部分地在以下描述中阐述,且所述额外的实施例与特征部分地对在本领域技术人员参阅说明书时变得明显,或可藉由实施本发明而了解。可藉由说明书中所描述的工具、组合和方法来实现并获得本发明的特征与优点。
附图说明
可藉由参照本专利说明书的其余部分以及附图来实现对本发明的特性以及优点的进一步了解,其中在多个附图之间使用相似的附图标记来指出类似的部件。在某些例子中,子标号与附图标记有关联且伴随着连字号,以表示多个类似部件之一。当引用附图标记而未载明现存的子标号时,旨在引用所有这些多个类似部件。
图1为流程图,所述流程图绘示根据本发明的实施例的用以制作共形介电层的经选择步骤。
图2为流程图,所述流程图绘示根据本发明的实施例的用以形成具有可选择的光学特性的共形介电层的经选择步骤。
图3为流程图,所述流程图绘示根据本发明的实施例的用以在间隙中形成介电层的经选择步骤。
图4显示根据本发明的实施例的基板处理系统。
图5A显示根据本发明的实施例的基板处理腔室。
图5B显示根据本发明的实施例的基板处理腔室的喷头。
具体实施方式
描述了用以由无碳的硅与氮的前驱物与自由基-氮的前驱物形成含有硅与氮的共形介电层(例如,硅-氮-氢(Si-N-H)膜)的方法、材料以及系统。无碳的硅与氮的前驱物主要藉由接触自由基-氮的前驱物而激发。因为硅与氮的膜在无碳情况下形成,因此可在较少孔形成以及较低体积收缩率下完成膜至硬化的氧化硅的转化。可将经沉积的含硅与氮的膜完全或部分转化为氧化硅,所述氧化硅容许共形介电层的光学特性成为可选择的。可在低温下进行含硅与氮的薄膜的沉积,以在基板沟槽中形成衬垫层。在多个实施例中,已发现低温衬垫层来增进湿润特性,并且所述低温衬垫层容许可流动的膜更完整地填充沟槽。在导入关于用以形成共形介电层的方法以及系统的额外细节的过程中,本发明的实施例的各方面将被呈现在一个实施例的论述中,并可了解到,除非有相反的陈述,所述各方面也可被应用在其余实施例中。
图1为流程图,所述流程图绘示根据本发明的实施例的用以制作共形介电层的方法100中的经选择步骤。方法100包括将无碳的硅前驱物提供至反应腔室102。无碳的硅前驱物可以是,举例而言,硅与氮的前驱物、硅与氢的前驱物或含硅-氮-与-氢的前驱物、以及其它类型的硅前驱物。这些前驱物的具体实例可包括硅烷基胺(silyl-amine),如H2N(SiH3)、HN(SiH3)2和N(SiH3)3、以及其它硅烷基胺。这些硅烷基胺可与可作为载气、反应性气体、或两者的额外气体混合。额外气体的实例可包括H2、N2、NH3、He和Ar、以及其它气体。无碳的硅前驱物的实例也可包含单独的或与其它含硅气体(例如,N(SiH3)3)、含氢气体(例如,H2)和/或含氮气体(例如,N2、NH3)混合的硅烷(SiH4)。无碳的硅前驱物也可包括乙硅烷、丙硅烷、高阶硅烷以及氯化硅烷,所述乙硅烷、丙硅烷、高阶硅烷以及氯化硅烷是单独的或与另一个或前述无碳的硅前驱物结合。
除了无碳以外,硅前驱物还可为无氧。氧的缺乏可在由前驱物形成的硅与氮的层中造成较低的硅醇(Si-OH)基团浓度。沉积膜中的过多的硅醇部分可在自沉积层移除羟基(-OH)部分的后沉积步骤期间造成增加的孔隙率以及收缩率。在其它实施例中,硅前驱物含有氧,氧可并入共形含硅与氮的膜中。为了调整沉积膜的沉积特性和/或光学特性,含有氧可能是理想的。可如单独的前驱物一样导入含氧前驱物,且可同时使无碳的硅前驱物以及含氧前驱物流入基板处理区域。
同样,可将自由基-氮的前驱物提供至反应腔室104。自由基-氮的前驱物为含氮-自由基的物质,所述含氮-自由基的物质在反应腔室外部由更稳定的氮前驱物形成。举例而言,如NH3的稳定的氮前驱物可在反应腔室外部的等离子体单元中活化,以形成自由基-氮的前驱物,所述自由基-氮的前驱物接着输送进入反应腔室。在不同的实施例中,稳定的氮前驱物也可为包含NH3与N2、NH3与H2、NH3与N2与H2、以及N2与H2的混合物。在与N2以及H2的混合物中,也可用胼来取代NH3或与NH3组合。稳定的氮前驱物(以及自由基-氮的前驱物)也可伴随着载气,如氩气(Ar)、氢气(H2)、氮气(N2)、氦气等等。所产生的自由基-氮的前驱物可为·N、·NH、·NH2中的一种或多种,且也可能伴随着在等离子体中所形成的离子化物质。
一般而言,不包含氮的自由基前驱物也将容许形成含硅与氮的层。若包含氮的话,自由基前驱物可为自由基-氮的前驱物,所述自由基-氮的前驱物与前述前驱物一起供应至远程等离子体区域。自由基前驱物在反应腔室中的与沉积区域分隔的一个区段中产生,前驱物在沉积区域中混合并反应,以在沉积基板(例如,半导体晶圆)上沉积硅与氮的层。在自由基前驱物为自由基-氮的前驱物的实施例中,稳定的氮前驱物流入远程等离子体区域并由等离子体激发。稳定的氮前驱物(以及自由基-氮的前驱物)也可伴随着载气,如氢气(H2)、氮气(N2)、氩气、氦气等等。还在所揭示的实施例中发现,由基本上由氮气(N2)所组成(有或没有额外惰性载气)的输入气体形成的自由基-氮的前驱物来产生有利的膜。在含硅前驱物包含氮的实施例中,自由基-氮的前驱物也可由基本上由氢气(H2)(以及任选的惰性载气)所组成的输入气体所形成的自由基前驱物所取代。
在多个实施例中,自由基-氮的前驱物在反应腔室中的藉由筛具或喷头与基板处理区域分隔的一个区段中产生。在基板处理区域中,无碳的硅前驱物以及自由基-氮的前驱物混合并反应106,以在沉积基板上沉积共形含硅与氮的膜108。自由基-氮的前驱物对无碳的硅前驱物提供主要激发。在多个实施例中,自由基-氮的前驱物对无碳的硅前驱物提供仅有的激发。在沉积期间,没有或基本上没有等离子体功率被施加至基板处理区域。
在不同的实施例中,基板处理区域中的压力低于200mTorr(毫托)、150mTorr、100mTorr、75mTorr或50mTorr之一。在不同的实施例中,共形含硅与氮的膜的厚度可低于30nm(纳米)、20nm、15nm、10nm以及5nm之一。在不同的实施例中,共形含硅与氮的膜的生长速率可低于30nm/min(纳米/分)、20nm/min、15nm/min、10nm/min以及5nm/min之一。如前所述,参照图1所描述的界限也可应用于本文他处所描述的其它实施例。前驱物的流速可够低以在基板处理区域中构成相对较低的压力。或者,可增加抽取速度。在不同的实施例中,共形含硅与氮的膜沉积期间的基板温度可低于200°C、150°C、100°C、75°C以及50°C之一。随着沉积之后,可固化和/或退火所述膜,以增加膜的氧含量,如参照图2而更详细地在本文中讨论。
现在参见图2,显示另一流程图,所述流程图绘示了根据本发明的实施例的用以在经图案化的基板上形成共形介电膜的方法200中的经选择步骤。方法200可包括移转经图案化的基板202。基板可具有在生产基板上的电气部件(例如,晶体管)以及互连的过程期间所存在的沟槽、间隙以及其它垂直特征。可用已在描述图1的过程中所呈现的方法,在基板上沉积共形含硅与氮的层204。
在沉积含硅与氮的膜之后,可在含氧气氛206中或简单暴露至含氧气氛206加热经图案化的基板。当导入含氧气氛时,基板可保持在反应腔室中,或者可将基板转移至导入含氧气氛的不同腔室。含氧气氛可包括一种或多种含氧气体,如分子氧(O2)、臭氧(O3)、水蒸汽(H2O)和氧化氮(NO、NO2等等)、以及其它含氧气体。含氧气氛也可包括自由基氧以及羟基物质,如原子氧(O)、氢氧化物(OH)等,所述自由基氧以及羟基物质可远程产生,并传输到基板腔室中。含氧物质的离子也可存在。
含氧气氛提供了氧气,以将含硅与氮的膜部分或完全转化为氧化硅(SiO2)膜。在含硅与氮的膜中缺少碳导致在最终氧化硅膜中形成显著较少的孔。在含硅与氮的膜中缺少碳也导致在转化为氧化硅期间,膜的较少体积缩小(即,收缩率)。举例而言,在转化为氧化硅时由含碳的硅前驱物形成的硅-氮-碳层可能收缩40体积%或更高的情况下,实质上无碳的硅与氮的膜可能收缩约15体积%或更低。
在多个实施例中,在暴露至含氧气氛期间,可加热经图案化的基板至高于50°C、100°C、150°C、200°C、250°C、300°C、400°C、500°C、600°C、800°C以及1000°C之一。在多个实施例中,在暴露至含氧气氛期间,基板温度可低于100°C、200°C、300°C、400°C、500°C、600°C、800°C、1000°C或1100°C之一。在不同的实施例中,所述上限中的任一个可结合所述下限中的任一个,以形成额外的基板温度范围。
实施例可包含具有不同温度以及气氛的多个加热阶段。举例而言,可在较低的第一温度下,在包括水蒸汽(H2O)的气氛中进行第一加热阶段,而可在较高的第二温度下,在实质上缺乏水蒸汽的干燥含氧气氛中进行第二加热阶段。也可在非含氧气氛(例如,干燥的N2、He、Ar等等)中进行第三加热阶段。在其它实施例中,在高温氧气(O2)退火(例如,高于800°C)之前,可在低温(例如,介于200°C与400°C之间)下进行臭氧固化。在不同的实施例中,含氧气氛固化和/或退火将折射率(在193nm下测量)的实部降低至低于1.8、1.75、1.7或1.65之一。在不同的实施例中,固化和/或退火将消光系数(折射率的虚部量;同样在193nm下测量)降低至低于0.15、0.10、0.075、0.050或0.025之一。在不同的实施例中,转化为氧化硅是部分的,且转化后的消光系数高于0.010、0.025、0.050、0.075以及0.10之一。在额外的实施例中,所述上限中的任一个可结合所述下限中的任一个,以形成额外的消光系数范围。
图3为流程图,所述流程图绘示根据本发明的实施例的用以在基板上的间隙中形成介电层的方法300中的经选择步骤。方法300可包括将经图案化的基板移转到基板处理区域中302。基板可具有多个间隙,供在基板上形成的器件部件(例如,晶体管)的间隔与结构所用。间隙可具有高度以及宽度,所述高度以及宽度定义高度与宽度(即,H/W)的纵横比(AR),所述纵横比显著大于1:1(例如,5:1或更大、6:1或更大、7:1或更大、8:1或更大、9:1或更大、10:1或更大、11:1或更大、12:1或更大,等等)。在许多例子中,高AR是因为小的间隙宽度,所述间隙宽度的范围介于约90nm至约22nm或更小(例如,约90nm、65nm、45nm、32nm、22nm、16nm等等)。
如参照图2至3所描述,可在基板上沉积共形含硅与氮的层304。如本文中所使用,共形层指的是与所述表面具有相同外形的表面上的大体上一致的材料层,即,所述层的表面以及被覆盖的表面大体上为平行的。本领域普通技术人员将理解,所沉积的材料可能不会是100%共形的,且因此术语“大体上”容许可接受的公差。在本文中将共形性量化为在两个不同位置处所测量的共形层的两个厚度的比例:其中一个厚度是在间隙的侧壁上,且另一个厚度是在间隙底部。在跨越晶圆或跨越管芯的厚度有显著变化的情况下,理解来自多个取样点的平均测量值。注意,间隙填充膜的沉积期间所发生的各种效应使壁厚度或底部厚度成为较小者。可将两个厚度中的较小者除以较大者并且将比例转换为百分比。在不同的实施例中,依此方式所测量的含硅与氮的层的共形性可大于70%、80%、90%以及95%之一。
藉由增加基板处理区域中的压力,在共形层上沉积可流动的含硅与氮的层306。可藉由增加前驱物(自由基氮前驱物和/或无碳含硅前驱物)中的一个或二个的流速来完成步骤306。交替或结合,可藉由部分关闭阀门或降低真空泵的实际抽取速度来降低抽取速度。在不同的实施例中,当可流动的层形成时,基板处理区域中的压力大于500mTorr、750mTorr、1Torr或2Torr之一。共形层的湿润特性协助可流动层渗透到间隙中。因为所述层是可流动的,所述层可填充具有高纵横比的间隙,而不会在填充材料的中央周围产生空隙或弱的缝隙。举例而言,在完全填充间隙之前,所沉积的可流动的材料不大可能过早阻塞间隙的顶部以在间隙中间留下空隙。
流动性(flowability)可能归因于将自由基-氮的前驱物与无碳的硅前驱物混合所造成的各种性质。这些性质可包括在经沉积的膜中的显著的氢成分和/或短链聚硅氮烷(polysilazane)聚合物的存在。在膜形成期间以及之后,这些短链生长并网络化以形成更密集的介电材料。举例而言,经沉积的膜可具有硅氮烷类Si-NH-Si骨干(即,Si-N-H膜)。当硅前驱物以及自由基-氮的前驱物两者为无碳时,经沉积的含硅与氮的膜实质上也为无碳。当然,“无碳”不必然表示膜没有痕量的碳。碳污染物可存在于前驱物材料中而构成它们进入经沉积的硅与氮前驱物的方式。然而,这些碳杂质的量远小于可能在具有碳部分的硅前驱物(例如,TEOS、TMDSO等等)中发现的量。
相似于图1至2的先前实施例,共形且可流动的含硅与氮的膜的沉积之后可以是固化和/或退火308。可部分或完全转化至氧化硅,并且所述转化可能影响可流动的膜以及共形沉积的膜二者。含氧气氛可包括分子氧、臭氧和水蒸汽、以及其它气体。在某些例子中,可自包括含氧气体的混合物击发等离子体,而在其它例子中,不从气体中形成等离子体。
进入CVD腔室的含氧气体可包括一种或多种化合物,所述一种或多种化合物在进入腔室前被活化(例如,激化(radicalize)、离子化等等)。举例而言,含氧气体可包括自由基氧物质、自由基羟物质等等,所述自由基氧物质、自由基羟物质等藉由通过远程等离子体源暴露更稳定的前驱物化合物而活化。更稳定的前驱物可包括产生羟(OH)自由基与离子的水蒸气以及过氧化氢(H2O2)、以及产生原子氧(O)自由基与离子的分子氧和/或臭氧。
示范性氧化硅沉积系统
可执行本发明的实施例的沉积腔室可包括高密度等离子体化学气相沉积(HDP-CVD)腔室、等离子体增强化学气相沉积(PECVD)腔室、次大气压化学气相沉积(SACVD)腔室和热化学气相沉积腔室、以及其它类型的腔室。可执行本发明的实施例的CVD系统的具体实例包括可购自美国加利福尼亚州圣克拉拉市(Santa Clara)的应用材料公司(Applied Material,Inc.)的CENTURAHDP-CVD腔室/系统、以及PECVD腔室/系统。
可与本发明的示范性方法一起使用的基板处理腔室的实例可包含在Lubomirsky等人于2006年5月30日提出且名称为“用于介电间隙填充的处理腔室(PROCESS CHAMBER FOR DIELECTRIC GAPFILL)”的共同转让的美国临时专利申请第60/803,499号中所显示以及描述的那些基板处理腔室,出于所有目的,所述申请的全部内容通过引用并入本文中。额外的示范性系统可包括在美国专利第6,387,207以及6,830,624号中所示以及描述的那些系统,出于所有目的,这些专利也通过引用并入本文中。
沉积系统的实施例可并入较大制造系统内,以生产集成电路芯片。图4显示根据所揭示的实施例的一个此类沉积系统400、烘烤和固化腔室。在所述图中,一对前开式晶圆盒(FOUP)402供应一个基板、多个基板(例如,300mm直径的晶圆),所述基板由机器人手臂404承接,并在置入晶圆处理腔室408a-f之一以前置入低压保持区406内。可用第二机器人手臂410以自保持区406向处理腔室408a-f来回移转基板晶圆。
处理腔室408a-f可包括一个或多个系统部件,用以在基板晶圆上沉积、退火、固化和/或蚀刻可流动的介电膜。在一种配置中,两对处理腔室(例如,408c-d以及408e-f)可用以在基板上沉积可流动的介电材料,且第三对处理腔室(例如,408a-b)可用来退火所沉积的介电材料。在另一种配置中,相同的两对处理腔室(例如,408c-d以及408e-f)可被配置成在基板上沉积并退火可流动的介电膜,而第三对腔室(例如,408a-b)可用来进行经沉积的膜的UV或E-光束固化。在再一种配置中,所有的三对腔室(例如,408a-f)可被配置成在基板上沉积并固化可流动的介电膜。在又一种配置中,两对处理腔室(例如,408c-d以及408e-f)可用来进行可流动的介电膜的沉积以及UV或E-光束固化两者,而第三对处理腔室(例如,408a-b)可用以退火介电膜。所述工艺中的任一个或多个可针对与不同实施例所显示的制造系统分离的(多个)腔室进行。
此外,处理腔室408a-f中的一个或多个可如湿式处理腔室一样地进行配置。这些处理腔室包括在含有湿气的气氛中加热可流动的介电膜。因此,系统400的实施例可包括湿式处理腔室408a-b以及退火处理腔室408c-d,以对经沉积的介电膜进行湿式以及干式退火二者。
图5A为根据所揭示的实施例的基板处理腔室500。远程等离子体系统(RPS)510可处理气体,所述气体接着通过气体入口组件511行进。气体入口组件511内可见到两种不同的气体供应通道。第一通道512承载通过远程等离子体系统RPS 510的气体,而第二通道513避开RPS 500。在所揭示的实施例中,第一通道502可供工艺气体所用,而第二通道513可供处理气体所用。所示的盖体(或导电顶部)521以及开孔隔板553之间设有绝缘环524,所述绝缘环524容许AC电位施加至相对于开孔隔板553的盖体521。工艺气体通过第一通道512行进到腔室等离子体区域520中,且可在腔室等离子体区域520中由等离子体单独激发或与RPS 510联合激发。腔室等离子体区域520和/或RPS 510的组合可称为远程等离子体系统。开孔隔板(又称为喷头)553隔离腔室等离子体区域520以及喷头553下方的基板处理区域570。喷头553容许等离子体存在于腔室等离子体区域520中,以避免直接在基板处理区域570中激发气体,而仍容许被激发的物质自腔室等离子体区域520行进至基板处理区域570中。
接附至基板处理区域的排放系统的抽取速度可经选择并配置,以使基板处理区域中的压力维持在200mTorr、150mTorr、100mTorr、75mTorr或50mTorr之一以下,以促进共形含硅与氮的膜的沉积。
喷头553位于腔室等离子体区域520以及基板处理区域570之间,且容许腔室等离子体区域520内所生成的等离子体流出物(前驱物或其它气体的激发衍生物)通过贯穿板厚度的多个穿孔556。喷头553也具有一个或多个凹陷容积551,所述凹陷容积可填充以蒸气或气体形式的前驱物(如含硅前驱物),并通过小孔555进入基板处理区域570,而非直接进入腔室等离子体区域520。在此揭示的实施例中,喷头553的厚度大于穿孔556的最小直径550的长度。为了维持显著浓度的激发物质自腔室等离子体区域520渗透至基板处理区域570,可藉由形成部分通过喷头553的穿孔556的较大直径部分来限缩穿孔的最小直径550的长度526。在所揭示的实施例中,穿孔556的最小直径550的长度的数量级可等于或小于穿孔556的最小直径的数量级。
在所示的实施例中,喷头553可(经由穿孔556)散布含有氧、氢和/或氮的工艺气体,和/或由腔室等离子体区域520中的等离子体所激发之后的此类工艺气体的等离子体流出物。在多个实施例中,通过第一通道512导入RPS 510和/或腔室等离子体区域520的工艺气体可含有氧气(O2)、臭氧(O3)、N2O、NO、NO2、NH3、NxHy(包括N2H4、硅烷、乙硅烷、TSA以及DSA)中的一种或多种。工艺气体也可包含载气,如氦气、氩气、氮气(N2)等等。第二通道513也可递送工艺气体和/或载气,和/或用以自生长的膜或经沉积的膜移除非期望成分的膜-固化气体。等离子体流出物可包括工艺气体的离子化或中性衍生物,且在本文中也可称为有关于导入的工艺气体的原子构成要素的自由基-氧前驱物和/或自由基-氮的前驱物。
在多个实施例中,穿孔556的数量可介于约60至约2000之间。穿孔556可具有多种形状,但最容易制作成圆形。在所揭示的实施例中,穿孔556的最小直径550可介于约0.5mm以及约20mm之间、或介于约1mm以及约6mm之间。还可自由选择穿孔的截面形状,所述截面形状可被制作成圆锥状、圆柱状或两种形状的组合。在不同的实施例中,用来将气体导入基板处理区域570的小孔555的数量可介于约100以及约5000之间、或介于约500以及约2000之间。小孔555的直径可介于约0.1mm以及约2mm之间。
图5B为根据所揭示的实施例的与处理腔室一起使用的喷头553的底部视图。喷头553相当于图5A中所绘示的喷头。穿孔556被描绘为在喷头553的底部具有较大的内径(ID),而在喷头553的顶部具有较小ID。小孔555基本上平均地散布在喷头表面上、甚至在穿孔556之间,与本文所描述的其它实施例相比,所述散布可协助提供更平均的混合。
当通过喷头553中的穿孔556抵达的等离子体流出物与通过源自凹陷容积551的小孔555抵达的含硅前驱物结合时,在基板处理区域570内的基座(未绘示)所支撑的基板上生成示范性膜。虽然基板处理区域570也可经配备以支持供诸如固化的其它工艺所用的等离子体,但在示范性膜生长期间,等离子体不存在。
可在喷头553上的腔室等离子体区域520中或在喷头553下的基板处理区域570中点燃等离子体。等离子体存在于腔室等离子体区域520中,以自含氮与氢的气体流入物产生自由基氮前驱物。将通常在射频(RF)范围内的AC电压施加于处理腔室的导电顶部521以及喷头553之间,以在沉积期间点燃腔室等离子体区域520中的等离子体。RF电源产生13.56MHz的高RF频率,但也可单独或结合13.56MHz频率而产生其它频率。
当启用基板处理区域570中的底部等离子体,以固化膜或清洁基板处理区域570边界的内表面时,可使顶部等离子体处于低功率或无功率状态。可藉由在喷头553以及腔室的基座或底部之间施加AC电压来点燃基板处理区域570中的等离子体。当等离子体存在时,可将清洁气体导入基板处理区域570。
基座可具有供热交换流体流动以控制基板的温度的热交换通道。此配置容许冷却或加热基板的温度,以维持相对较低的温度(自0°C到约120°C)。热交换流体可包含乙二醇以及水。也可使用配置成制做平行同心圆形式的两个完整匝数的嵌入式单环嵌入加热器元件,来电阻性地加热基座的晶圆支撑盘(较佳为铝、陶瓷或两者的组合)以达到相对较高的温度(自约120°C到约1100°C)。加热器元件的外部可邻近支撑盘的周边,而加热器元件的内部可在具有较小半径的同心圆的路线上。连接加热器元件的线路通过基座的杆部。
基板处理系统由系统控制器所控制。在示范性实施例中,系统控制器包括硬盘驱动器、软盘驱动器以及处理器。处理机含有单板计算机(SBC)、模拟和数字输入/输出板、接口板以及步进马达控制器板。CVD系统的各种部件符合Versa Modular European(VME)标准,所述标准定义板、插件架以及连接器尺寸和类型。VME标准还定义具有16位数据总线以及24位地址总线的总线结构。
系统控制器控制CVD机器的全部活动。系统控制器执行系统控制软件,所述系统控制软件为储存在计算机可读介质中的计算机程序。较佳地,所述介质为硬盘驱动器,但是所述介质也可为其它类型的存储器。计算机程序包含多指令集,所述指令集支配特定工艺的时序、气体的混合、腔室压力、腔室温度、RF功率等级、基座位置以及其它参数。也可使用储存在其它存储器装置(包含如软盘或另一适当的驱动器)的其它计算机程序来命令系统控制器。
可使用由系统控制器所执行的计算机程序产品来实施在基板上沉积膜叠层的工艺、或用以清洁腔室的工艺。计算机程序代码可以任何惯用的计算机可读编程语言来撰写:例如,68000汇编语言、C、C++、Pascal、Fortran或其它编程语言。可使用惯用的文本编辑器将合适的程序代码输入单个文件或多个文件中,并储存或体现在计算机可使用介质中,如计算机的存储器系统。若输入的代码文本是在高级语言中,则编译所述代码,并接着将所产生的编译器代码与预先编译的Microson库例程的H标码链接。为了执行链接的、经编译的H标代码,系统用户援引H标代码,致使计算机系统在存储器中加载所述代码。CPU接着读取并执行所述代码以进行程序中所标识的任务。
用户与控制器之间的接口经由平板触敏监视器。在较佳的实施例中,使用了两个监视器,其中一个安装在清洁室墙壁上供操作员所用,而另一个安装在墙壁后供服务技师所用。在一次只接受一个输入的情况下,这两个监视器可同步显示相同的信息。为了选择特定画面或功能,操作员触摸触敏监视器的指定区域。被触摸的区域改变所述触摸的区域的加亮颜色,或者显示一个新的菜单或画面,以确认操作员与触敏监视器之间的通信。其它装置,如键盘、鼠标或其它指示或通信装置可取代或附加至触敏监视器,以容许用户与系统控制器通信。
腔室等离子体区域或RPS中的区域可称作远程等离子体区域。在多个实施例中,自由基氮前驱物在远程等离子体区域中生成,并行进至基板处理区域内,其中无碳含硅前驱物藉由自由基氮前驱物激发。在多个实施例中,无碳含硅前驱物仪由自由基氮前驱物激发。在多个实施例中,等离子体功率基本上可仪施加至远程等离子体区域,以确保自由基氮前驱物对无碳含砖前驱物提供主要的激发。
在本文中,在含砖与氮的层生长期间以及在某些其它处理步骤期间,可将基板处理区域描述为“无等离子体"。“无等离子体”并不必然意味着所述区域完全没有等离子体。在等离子体区域内生成的离子化物质可行进至基板处理区域内,但无碳含砖前驱物实质上不会被施加到等离子体区域的等离子体功率所激发。很难界定腔室等离子体区域中的等离子体的边界,且所述边界可能通过唢头中的通孔侵入基板处理区域上方。在感应耦合的等离子体的情况下,少量离子化可直接在基板处理区域中实行。此外,低强度等离子体可在基板处理区域中生成,而不需消除形成膜的可流动本性。在自由激氮前驱物生成期间,具有比腔室等离子体区域低得多的强度的等离子体的所有成因,都不偏离本文中所用的“无等离子体”的范畴。
如在本文中所使用的,“基板”可为在所述基板上形成有各个层或在所述基板上未形成各个层的支撑基板。支撑基板可为各种掺杂浓度以及轮廓的绝缘体或半导体,且可为,例如在集成电路制造中所使用的类型的半导体基板。“氧化硅”的层用以作为含硅与氧的材料的简写,且可与含硅与氧的材料交换使用。由此,氧化硅可包括多种浓度的其它构成要素,如氮、氢、碳等等。在某些实施例中,氧化硅基本上由硅与氧组成。术语“前驱物”用来指示任何工艺气体,所述工艺气体参与自表面移除材料或在表面上沉积材料的反应。处于“激发状态”的气体描述其中至少某些气体分子处于震动激发状态、游离状态和/或离子化状态的气体。气体可为两种以上气体的组合。术语“沟槽”或“间隙”被使用在本文各处,并非暗示蚀刻的几何形状具有大的水平纵横比。自表面的上方观看,沟槽以及间隙可呈现圆形、椭圆形、多边形、矩形或各种其它形状。
在已描述若干实施例之后,本领域技术人员将认识到,在不偏离本发明的精神的情况下可使用各种修改、替代构造以及等效方案。另外,未描述若干熟知的工艺以及元件以避免不必要地混淆本发明。因此,以上描述不应视为限制本发明的范畴。
在提供一范围的值的情况下,除非上下文另有明确指定,应理解具体地揭示所述范围的上限与下限之间的每一中间值,精确度为至下限单位的十分之一。涵盖在陈述范围中的任一陈述值或中间值与在所述陈述范围中的任一其它陈述值或中间值之间的每一较小范围。这些较小范围的上限以及下限可独立地包括在所述范围中或排除在所述范围之外,且在界限中任一个、没有任一界限或两界限包括在所述较小范围中的每一范围也涵盖在本发明内,所述每一范围受制于所陈述范围中任何特定排除的界限。在所陈述范围包括所述界限中一个或两个的情况下,也包括排除那些所包括的界限中一个或两个的范围。
如本文以及所附权利要求中所使用,除非上下文另有明确指定,否则单数形式“一”、“一个”以及“所述”包括多个指示物。因此,例如,引用“一个工艺”包括多个此类工艺,且引用“所述前驱物”包括参照一个或多个前驱物以及本领域技术人员已知的所述前驱物的等效物,等等。
同样,在本说明书中以及以下权利要求中使用的词汇“包含”、“包括”、“含有”、“具有”以及“有”时,旨在指定陈述的特征、整数、部件或步骤的存在,但所述词汇不排除一个或多个其它特征、整数、部件、步骤、动作或组的存在或添加。
Claims (22)
1.一种在基板处理腔室中的基板处理区域中的经图案化的基板上形成共形含硅与氮的层的方法,所述方法包含:
将无碳含硅与氮的前驱物与自由基-氮的前驱物混合,其中藉由接触所述自由基-氮的前驱物而主要地激发所述无碳含硅与氮的前驱物;以及
在所述经图案化的基板上沉积具有共形层厚度的共形含硅与氮的层。
2.如权利要求1所述的方法,其特征在于,在所述共形含硅与氮的膜的沉积期间,所述基板处理区域中的共形沉积压力低于或约为200mTorr。
3.如权利要求1所述的方法,其特征在于,在所述共形含硅与氮的膜沉积期间,所述基板的共形沉积温度低于或约为200°C。
4.如权利要求1所述的方法,其特征在于,所述共形层厚度低于或约为20nm。
5.如权利要求1所述的方法,还包含:藉由使所述含硅与氮的层暴露至臭氧,将所述含硅与氮的层转化为含硅与氧的层。
6.如权利要求1所述的方法,其特征在于,所述无碳含硅与氮的前驱物包含硅烷基胺。
7.如权利要求6所述的方法,其特征在于,所述硅烷基胺包含N(SiH3)3。
8.如权利要求1所述的方法,其特征在于,所述自由基-氮的前驱物在与所述无碳含硅与氮的前驱物混合之前使用等离子体自含氮与氢的气体所产生。
9.如权利要求8所述的方法,其特征在于,所述含氮与氢的气体包含选自由氨气、N2以及H2所构成的组中的气体。
10.如权利要求1所述的方法,其特征在于,所述共形含硅与氮的层包含无碳Si-N-H层。
11.如权利要求1所述的方法,其特征在于,藉由使所述含硅与氮的层暴露至含氧气氛,将所述共形含硅与氮的层转化为氧化硅层。
12.如权利要求11所述的方法,其特征在于,所述含氧气氛包含选自由氧气、臭氧以及水蒸汽所构成的组中的一种或多种气体。
13.一种形成具有降低的体积收缩率的含硅层的方法,所述方法包含:
移转含有间隙的基板;
在所述基板上沉积共形含硅与氮的层,其中所述共形含硅与氮的层具有共形性;以及
在所述共形含硅与氮的层上沉积可流动的含硅与氮的层,其中所述含硅层包含所述共形含硅与氮的层以及所述可流动的含硅与氮的层二者。
14.如权利要求13所述的方法,还包含:在含氧气氛中加热所述含硅层,以增加氧含量,其中所述含硅层保留沉积在所述间隙中的所述无碳含硅与氮的层的约85%以上的体积。
15.如权利要求13所述的方法,其特征在于,所述共形含硅与氮的层的所述共形性大于或约为80%。
16.如权利要求13所述的方法,其特征在于,所述共形含硅与氮的层藉由含硅与氮的前驱物与自由基-氮的前驱物的反应沉积在所述基板上,其中所述自由基-氮的前驱物对所述硅与氮前驱物提供主导性激发。
17.如权利要求16项所述的方法,其特征在于,所述含硅与氮的前驱物包含N(SiH3)3,且所述自由基-氮的前驱物由等离子体-活化的NH3形成。
18.如权利要求14所述的方法,其特征在于,所述含氧气氛包含O2、O3或H2O中的至少一个。
19.如权利要求13所述的方法,其特征在于,所述间隙中的所述含硅层为实质上没有空隙的。
20.如权利要求16所述的方法,其特征在于,所述含硅与氮的层包含Si-N-H层。
21.如权利要求13所述的方法,其特征在于,所述共形含硅与氮的层包含Si-N-H层。
22.如权利要求13项所述的方法,其特征在于,所述基板间隙具有约50nm或更小的宽度。
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US8563445B2 (en) | 2013-10-22 |
TW201142073A (en) | 2011-12-01 |
WO2011109148A3 (en) | 2012-02-23 |
TWI534290B (zh) | 2016-05-21 |
KR20130014543A (ko) | 2013-02-07 |
KR101853802B1 (ko) | 2018-05-02 |
WO2011109148A2 (en) | 2011-09-09 |
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JP2013521650A (ja) | 2013-06-10 |
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