CN102888587A - Evaporation method and evaporation equipment - Google Patents
Evaporation method and evaporation equipment Download PDFInfo
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- CN102888587A CN102888587A CN2011102429022A CN201110242902A CN102888587A CN 102888587 A CN102888587 A CN 102888587A CN 2011102429022 A CN2011102429022 A CN 2011102429022A CN 201110242902 A CN201110242902 A CN 201110242902A CN 102888587 A CN102888587 A CN 102888587A
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- gas
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- entrance
- vapor deposition
- deposition source
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- 238000001704 evaporation Methods 0.000 title claims abstract description 42
- 230000008020 evaporation Effects 0.000 title claims abstract description 40
- 238000007740 vapor deposition Methods 0.000 claims description 36
- 238000000576 coating method Methods 0.000 claims description 21
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 230000005251 gamma ray Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 99
- 239000000463 material Substances 0.000 description 6
- 238000005401 electroluminescence Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000004821 distillation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The invention discloses an evaporation method and evaporation equipment. The evaporation equipment comprises a cavity, at least one first evaporation source and at least one second evaporation source. The cavity has a first chamber, a second chamber, an outlet, a communication port, at least one first inlet and at least one second inlet. The first evaporation source is arranged at the first inlet, and the second evaporation source is arranged at the second inlet. A first gas provided by the first evaporation source enters the first chamber through the first inlet. And a second gas provided by the second evaporation source enters the first chamber through the second inlet, and the first gas entering the first chamber and the second gas are mixed in the first chamber, enter the second chamber through the communication port and leave the second chamber through the outlet.
Description
Technical field
The present invention relates to a kind of plating object space method and plating thing equipment, and particularly relate to a kind of evaporation coating method and evaporated device.
Background technology
Organic electroluminescence display device is a kind of display unit of emissive type, need not to use backlight module, therefore can save the manufacturing cost of backlight module and the energy that backlight module itself consumes.In addition, because organic electroluminescence display device is without the visual angle problem, and has the characteristics such as true color, high speed of answer, therefore organic electroluminescence display device has become a kind of flat display apparatus that has performance and environmental protection concept concurrently.Similarly, solar cell also becomes popular star's commodity because belonging to eco-friendly power source.
In the manufacturing of organic electroluminescence display device and solar cell, the yield of multicomponent evaporation is the luminous key that evenly reaches solar battery efficiency of impact.Yet different organic materials evaporation (distillation) temperature is different, concentration and component proportions control difficulty, and need avoid material cracking or chemical reaction.In addition, different organic materialss evaporates (distillation) molecular diffusion rate difference, and without certain directivity, so component proportions control is difficult, and material use efficiency is low.
Summary of the invention
The object of the present invention is to provide a kind of evaporated device, can accurately control the component proportions of deposition material.
Another purpose of the present invention is to provide a kind of evaporation coating method, can accurately control the component proportions of deposition material.
For reaching above-mentioned purpose, evaporation coating method of the present invention comprises the following steps.One first gas is mixed at one first chamber with one second gas.Make mixed the first gas and the second gas enter one second chamber from the first chamber.Make mixed the first gas and the second gas in the second chamber leave the second chamber.
In one embodiment of this invention, the first gas is to add thermosetting by one first target.
In one embodiment of this invention, the first gas and the second gas are that state with critical flow enters the first chamber.
In one embodiment of this invention, mixed the first gas and the second gas are that state with critical flow enters the second chamber from the first chamber.
In one embodiment of this invention, mixed the first gas and the second gas are that state with critical flow leaves the second chamber.
In one embodiment of this invention, evaporation coating method also comprises introduces a sheath layer gas (sheath gas) to the second chamber, and with the γ-ray emission forced convection of sheath layer mixed the first gas and the second gas is taken away the second chamber.
In one embodiment of this invention, evaporation coating method also comprises the following steps.One the 3rd gas, the first gas are mixed at the first chamber with one second gas.Make mixed the first gas, the second gas and the 3rd gas enter the second chamber from the first chamber.Make mixed the first gas, the second gas and the 3rd gas in the second chamber leave the second chamber.
Evaporated device of the present invention comprises a cavity, at least one the first vapor deposition source and at least one the second vapor deposition source.Cavity has one first chamber, one second chamber, an outlet, a connected entrance, at least one the first entrance and at least one the second entrance.Connected entrance connects the first chamber and the second chamber, and outlet is positioned at the second chamber.The first vapor deposition source is disposed at the first entrance, and the second vapor deposition source is disposed at the second entrance.One first gas that the first vapor deposition source provides enters the first chamber via the first entrance.One second gas that the second vapor deposition source provides enters the first chamber via the second entrance.The first gas that enters the first chamber enters the second chamber with after the second gas mixes via connected entrance in the first chamber, leave the second chamber via outlet again.
In one embodiment of this invention, the quantity of at least one the first entrance, at least one the second entrance, at least one the first vapor deposition source and at least one the second vapor deposition source is respectively a plurality of.
In one embodiment of this invention, export and be the slit-type opening.In addition, the width of outlet is for example between 0.8 millimeter to 3.2 millimeters.
In one embodiment of this invention, evaporated device also comprises at least one the 3rd vapor deposition source.Cavity also has at least one the 3rd entrance, and the 3rd vapor deposition source is disposed at the 3rd entrance.After the first gas, the second gas and one the 3rd gas that the 3rd vapor deposition source provides mix, enter the second chamber via connected entrance in the first chamber, leave the second chamber via outlet again.
In one embodiment of this invention, cavity also has at least one the 3rd entrance, use for a sheath layer gas (sheath gas) and enter the second chamber via the 3rd entrance, and with the γ-ray emission forced convection of sheath layer mixed the first gas and the second gas are taken away the second chamber via outlet.
In one embodiment of this invention, the aperture of the first entrance and the second entrance is between 0.1 millimeter to 1.2 millimeters.
In one embodiment of this invention, the aperture of connected entrance is between 1 millimeter to 2.4 millimeters.
Based on above-mentioned, in evaporation coating method of the present invention and evaporated device, evaporation gas after the first chamber fully mixes with specified proportion, enters the second chamber again and leaves the second chamber from outlet first.Therefore, can accurately control the component proportions of plated film.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended accompanying drawing to be described in detail below.
Description of drawings
Fig. 1 is the diagrammatic cross-section of the evaporated device of one embodiment of the invention;
Fig. 2 is the schematic perspective view of the evaporated device of Fig. 1.
The main element nomenclature
50: thing to be plated
100: evaporated device
110: cavity
112: the first chambers
116: outlet
118: connected entrance
120: the first vapor deposition source
130: the second vapor deposition source
140: the three vapor deposition source
P12: the first entrance
P14: the second entrance
P16: the 3rd entrance
P18: entrance
G12: the first gas
G14: the second gas
G16: the 3rd gas
G18: sheath layer gas (sheath gas)
Embodiment
The evaporation coating method of one embodiment of the invention is to allow first one first gas mix at one first chamber with one second gas.Then, make mixed the first gas and the second gas enter one second chamber from the first chamber.Afterwards, make mixed the first gas in the second chamber and the second gas leave the second chamber and be plated on the thing to be plated.Below, the evaporated device 100 of collocation Fig. 1 and Fig. 2 is illustrated the evaporation coating method of the present embodiment, the evaporated device 100 of Fig. 1 and Fig. 2 but evaporation coating method of the present invention not necessarily will be arranged in pairs or groups, and evaporated device 100 also is not limited to only can be used for the evaporation coating method of enforcement the present embodiment.
Fig. 1 is the diagrammatic cross-section of the evaporated device of one embodiment of the invention, and Fig. 2 is the schematic perspective view of the evaporated device of Fig. 1.Please refer to Fig. 1 and Fig. 2, the evaporated device 100 of the present embodiment comprises a cavity 110, at least one the first vapor deposition source 120 and at least one the second vapor deposition source 130.Cavity 110 has one first chamber 112, one second chamber 114, outlet 116, one connected entrance 118, at least one the first entrance P12 and at least one second an entrance P14.Connected entrance 118 connects the first chamber 112 and the second chamber 114, and outlet 116 is positioned at the second chamber 114.The first vapor deposition source 120 is disposed at the first entrance P12, and the second vapor deposition source 130 is disposed at the second entrance P14.In the present embodiment, the quantity of the first vapor deposition source 120 and the second vapor deposition source P14 is all take a plurality of as example, but also may each only have one, and the quantity of the first entrance P12 and the second entrance P14 is then with the number change of the first vapor deposition source 120 and the second vapor deposition source P14.In addition, the quantity of the connected entrance 118 of the present embodiment is also take a plurality of as example, but also possibility respectively only have one, and the quantity of the quantity of connected entrance 118 and the first entrance P12 and the second entrance P14 is without particular kind of relationship.
The one first gas G12 that the first vapor deposition source 120 provides enters the first chamber 112 via the first entrance P12.The one second gas G14 that the second vapor deposition source 130 provides enters the first chamber 112 via the second entrance P14.The the first gas G12 that enters the first chamber 112 and the second gas G14 enter the second chamber 114 via connected entrance 118 after 112 interior mixing of the first chamber, be plated on the thing 50 to be plated via outlet 116 again.
According to as can be known above-mentioned, because the first gas G12 formerly mixes with the second gas G14, therefore can accurately control in this stage the component proportions of the mixing of gas in the first chamber 112.Then, finish mixed the first gas G12 and the second gas G14 and be introduced into the second chamber 114, be plated on the thing 50 to be plated via outlet 116 from the second chamber 114 again.In addition, relatively move by suitably allowing produce between evaporated device 100 and the thing to be plated 50, can be fast and finish equably large-area evaporation operation.
The evaporated device 100 of the present embodiment also comprises at least one the 3rd vapor deposition source 140.Cavity 110 also has at least one the 3rd entrance P16, and the 3rd vapor deposition source 140 is disposed at the 3rd entrance P16.One the 3rd gas G16 that the first gas G12, the second gas G14 and the 3rd vapor deposition source 140 provide enters the second chamber 114 via connected entrance 118 after 112 interior mixing of the first chamber, be plated on the thing 50 to be plated via outlet 116 again.In other words, the evaporated device 100 of the present embodiment and evaporation coating method can carry out the common evaporation of multiple material.In the present embodiment, the first gas G12 adds thermosetting by one first target, and the second gas G14 adds thermosetting by one second target, and the 3rd gas G16 adds thermosetting by one the 3rd target.The first target, the second target and the 3rd target for example are respectively indium (In), gallium (Ga) and selenium (Se).
In the present embodiment, the first gas G12, the second gas G14 and the 3rd gas G16 are that the state with critical flow enters the first chamber 112.The state of critical flow refers to that gas has reached maximum value by the flow of opening, even the force value of gas source end continues to raise, gas can not continue to increase by the flow of opening yet.Therefore, by allowing the first gas G12, the second gas G14 and the 3rd gas G16 be that state with critical flow enters the first chamber 112, can control the first gas G12, the second gas G14 and the 3rd gas G16 and enter the first chamber 112 with fixed proportion, and then obtain the fixing mixed gas of component proportions.In addition, mixed the first gas G12, the second gas G14 and the 3rd gas G16 are that state with critical flow enters the second chamber 114 from the first chamber 112 in the present embodiment.In addition, the state that mixed the first gas G12, the second gas G14 and the 3rd gas G16 also can critical flows in the present embodiment leaves the second chamber 114, so that control the rate of deposition of the evaporation thing on the thing 50 to be plated.Above, all has simultaneously the situation of the first gas G12, the second gas G14 and the 3rd gas G16 as example to describe, but only having the first gas G12 and the second gas G14 or also having under the situation of more evaporation gases, can utilize equally the mode of the state that makes gas maintain critical flow accurately to grasp evaporation plating parameter.
The cavity 110 of the present embodiment can also have at least one entrance P18, use for a sheath layer gas G18 and enter the second chamber 114 via entrance P18, and produce forced convection and mixed the first gas G12 and the second gas G14 are taken away the second chamber 114 via outlet 116 with sheath layer gas G18.Sheath layer gas G18 has and prevents that the first gas G12 and the second gas G14 are plated on outlet 116 and cause exporting 116 functions of blocking.
The outlet 116 of the present embodiment is the slit-type opening, and the slit-type opening is fit to carry out continuous and large-area evaporation operation, and the materials'use rate is high, and plated film speed is high, and man-hour is short, can effectively reduce cost and improve quality.In addition, outlet 116 aperture is dwindled towards the external world gradually by the second chamber 114, and the design of this kind convergent can prevent to export 116 both sides and generate vortex stream, and then prevents gas holdup and be plated on the both sides of outlet 116.The first entrance P12 of the present embodiment and the aperture of the second entrance P14 are between 0.1 millimeter to 1.2 millimeters, and the aperture of connected entrance 118 is between 1 millimeter to 2.4 millimeters, and the width of outlet 116 is between 0.8 millimeter to 3.2 millimeters.
In sum, in evaporation coating method of the present invention and evaporated device, cavity is divided into two chambers, and evaporation gas after the first chamber fully mixes with specified proportion, just enters the second chamber first, then leaves and is plated on the thing to be plated from outlet.Therefore, evaporation coating method of the present invention and evaporated device can accurately be controlled the component proportions of plated film.
Although disclosed the present invention in conjunction with above embodiment; yet it is not to limit the present invention; be familiar with this operator in the technical field under any; without departing from the spirit and scope of the present invention; can do a little change and retouching, thus protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (15)
1. evaporation coating method comprises:
Make one first gas and one second gas enter the first chamber with the state of critical flow and mix;
Make mixed this first gas and this second gas enter one second chamber from this first chamber; And
Make mixed this first gas and this second gas in this second chamber leave this second chamber.
2. evaporation coating method as claimed in claim 1, wherein this first gas is to add thermosetting by one first target.
3. evaporation coating method as claimed in claim 1, wherein this second gas is to add thermosetting by one second target.
4. evaporation coating method as claimed in claim 1, wherein mixed this first gas and this second gas are that state with critical flow enters this second chamber from this first chamber.
5. evaporation coating method as claimed in claim 1, wherein mixed this first gas and this second gas are that state with critical flow leaves this second chamber.
6. evaporation coating method as claimed in claim 1 also comprises and introduces a sheath layer gas to this second chamber, and with this sheath layer γ-ray emission forced convection mixed this first gas and this second gas taken away this second chamber.
7. evaporation coating method as claimed in claim 1 also comprises one the 3rd gas, this first gas are mixed at this first chamber with one second gas;
Make mixed this first gas, this second gas and the 3rd gas enter this second chamber from this first chamber; And
Make mixed this first gas, this second gas and the 3rd gas in this second chamber leave this second chamber.
8. evaporated device comprises:
Cavity has the first chamber, the second chamber, outlet, connected entrance, at least one the first entrance and at least one the second entrance, and wherein this connected entrance connects this first chamber and this second chamber, and this outlet is positioned at this second chamber;
At least one the first vapor deposition source is disposed at this first entrance; And
At least one the second vapor deposition source, be disposed at this second entrance, wherein one first gas that provides of this first vapor deposition source enters this first chamber via this first entrance, one second gas that this second vapor deposition source provides enters this first chamber via this second entrance, this first gas that enters this first chamber is with after this second gas mixes in this first chamber, enter this second chamber via this connected entrance, leave this second chamber via this outlet again.
9. evaporated device as claimed in claim 8, wherein this at least one first entrance, this at least one second entrance, this at least one first vapor deposition source are respectively a plurality of with the quantity of this at least one the second vapor deposition source.
10. evaporated device as claimed in claim 8, wherein this exports and is the slit-type opening.
11. evaporated device as claimed in claim 10, the width that wherein should export is between 0.8 millimeter to 3.2 millimeters.
12. evaporated device as claimed in claim 8, also comprise at least one the 3rd vapor deposition source, wherein this cavity also has at least one the 3rd entrance, the 3rd vapor deposition source is disposed at the 3rd entrance, after this first gas, this second gas and one the 3rd gas that the 3rd vapor deposition source provides mix in this first chamber, enter this second chamber via this connected entrance, leave this second chamber via this outlet again.
13. evaporated device as claimed in claim 8, wherein this cavity also has at least one the 3rd entrance, use for a sheath layer gas and enter this second chamber via the 3rd entrance, and with this sheath layer γ-ray emission forced convection mixed this first gas and this second gas are taken away this second chamber via this outlet.
14. evaporated device as claimed in claim 8, wherein the aperture of this first entrance and this second entrance is between 0.1 millimeter to 1.2 millimeters.
15. evaporated device as claimed in claim 8, wherein the aperture of this connected entrance is between 1 millimeter to 2.4 millimeters.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100125809A TWI490355B (en) | 2011-07-21 | 2011-07-21 | Evaporating method and evaporating apparatus |
| TW100125809 | 2011-07-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102888587A true CN102888587A (en) | 2013-01-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102429022A Pending CN102888587A (en) | 2011-07-21 | 2011-08-23 | Evaporation method and evaporation equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102888587A (en) |
| TW (1) | TWI490355B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104561905A (en) * | 2014-12-29 | 2015-04-29 | 昆山国显光电有限公司 | Linear evaporation source |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5458010A (en) * | 1991-11-12 | 1995-10-17 | United Sciences, Inc. | Vacuum dilution extraction gas sampling system |
| WO2010094582A1 (en) * | 2009-02-21 | 2010-08-26 | Inficon Gmbh | Sniffing leak detector |
| CN101061249B (en) * | 2004-10-14 | 2010-12-08 | 多摩-技术转让机关株式会社 | Physical deposition system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09143692A (en) * | 1995-11-29 | 1997-06-03 | Ishikawajima Harima Heavy Ind Co Ltd | Device for vapor-plating with high vapor pressure metal and vapor plating method using the same |
| JP5179739B2 (en) * | 2006-09-27 | 2013-04-10 | 東京エレクトロン株式会社 | Vapor deposition apparatus, vapor deposition apparatus control apparatus, vapor deposition apparatus control method, and vapor deposition apparatus usage method |
-
2011
- 2011-07-21 TW TW100125809A patent/TWI490355B/en active
- 2011-08-23 CN CN2011102429022A patent/CN102888587A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5458010A (en) * | 1991-11-12 | 1995-10-17 | United Sciences, Inc. | Vacuum dilution extraction gas sampling system |
| CN101061249B (en) * | 2004-10-14 | 2010-12-08 | 多摩-技术转让机关株式会社 | Physical deposition system |
| WO2010094582A1 (en) * | 2009-02-21 | 2010-08-26 | Inficon Gmbh | Sniffing leak detector |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104561905A (en) * | 2014-12-29 | 2015-04-29 | 昆山国显光电有限公司 | Linear evaporation source |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI490355B (en) | 2015-07-01 |
| TW201305363A (en) | 2013-02-01 |
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Application publication date: 20130123 |