CN102956734A - Polycrystalline silicon battery component with adjustable light transmittance - Google Patents

Polycrystalline silicon battery component with adjustable light transmittance Download PDF

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Publication number
CN102956734A
CN102956734A CN2012104874439A CN201210487443A CN102956734A CN 102956734 A CN102956734 A CN 102956734A CN 2012104874439 A CN2012104874439 A CN 2012104874439A CN 201210487443 A CN201210487443 A CN 201210487443A CN 102956734 A CN102956734 A CN 102956734A
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CN
China
Prior art keywords
polycrystalline silicon
battery component
silicon battery
layer
film layers
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Pending
Application number
CN2012104874439A
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Chinese (zh)
Inventor
杨柳
刘昕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhongshan Chuangke Scientific Research Technology Services Co Ltd
Original Assignee
Zhongshan Chuangke Scientific Research Technology Services Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Zhongshan Chuangke Scientific Research Technology Services Co Ltd filed Critical Zhongshan Chuangke Scientific Research Technology Services Co Ltd
Priority to CN2012104874439A priority Critical patent/CN102956734A/en
Publication of CN102956734A publication Critical patent/CN102956734A/en
Pending legal-status Critical Current

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The invention discloses a polycrystalline silicon battery component with adjustable light transmittance. The polycrystalline silicon battery component is characterized by comprising battery component back plates which are mutually bonded from bottom to top, a polyvinyl butyral (PVB) plastic sheet layer, a light-sensitive middle film layer, a PVB plastic sheet layer, a polycrystalline silicon battery piece combined layer, a PVB plastic sheet layer and a figured glass layer. When the polycrystalline silicon battery component is used in building integrated photovoltaics (BIPV), the indoor comfort level can be improved.

Description

A kind of polycrystal silicon cell assembly of adjustable transparent rate
Technical field:
The present invention relates to a kind of polycrystal silicon cell assembly of adjustable transparent rate.
Background technology:
Traditional polycrystal silicon cell assembly, light transmittance is non-adjustable, or is opaque, or is transparent, can't be along with the variation of ambient temperature, light transmittance changes, when its as the BIPV(photovoltaic building) when using, affect indoor comfort level.
Summary of the invention:
The object of the present invention is to provide a kind of polycrystal silicon cell assembly of adjustable transparent rate, when its as the BIPV(photovoltaic building) when using, can improve indoor comfort level.
A kind of polycrystal silicon cell assembly of adjustable transparent rate is characterized in that: comprise at least mutual bonding cell module back veneer, PVB film layers, the middle rete of sensitization, PVB film layers, polycrystalline silicon battery plate combination layer, PVB film layers and pattern glass layer from bottom to top.
As a kind of improvement of such scheme, the vanadium dioxide phase transformation intellectual material layer of rete for mixing in the middle of the described sensitization.
As the further improvement of such scheme, described cell module back veneer is that thickness is 3mmPE plate or 8mm clear glass.
Again step as such scheme improves, and the thickness of described pattern glass layer is 6mm.
Again step as such scheme improves, and the thickness of described PVB film layers is 0.76mm.
The present invention has following advantage: rete in the middle of the sensitization of the present invention, and when it is spent above 26 in temperature, aobvious milky, transmitance is below 30%, and temperature is higher, and transmitance is lower; When it had been lower than for the 26 lower times of temperature of spending, show colourless, transmitance 80%.Therefore surpass 26 when spending in temperature, the present invention can play the effect of sunshade, be lower than 26 when spending in temperature, the present invention is well daylighting again.With the present invention as the BIPV(photovoltaic building) when using, can strengthen indoor comfort level, as in hot summer, when temperature is higher than 26 when spending, but sunshade is to reduce room conditioning refrigeration expense; At Cold Winter, when temperature was lower than 26, again fully daylighting reduced the indoor heating expense.
Description of drawings:
Fig. 1 is structure cutaway view of the present invention.
Embodiment:
As shown in the figure, a kind of polycrystal silicon cell assembly of adjustable transparent rate comprises mutual bonding cell module back veneer 1, PVB film layers 2, the middle rete 3 of sensitization, PVB film layers 4, polycrystalline silicon battery plate combination layer 5, PVB film layers 6 and pattern glass layer 7 at least from bottom to top.
Described cell module back veneer 1 is that thickness is 3mmPE plate or 8mm clear glass.
Described PVB film layers 2,4,6 thickness are 0.76mm.Mainly play bonding upper and lower layer.
The vanadium dioxide phase transformation intellectual material layer of rete 3 for mixing in the middle of the described sensitization.It is the vanadium dioxide presoma that utilizes liquid phase deposition preparation to mix in PVB film layers 2, after filtration, the V that obtains after the washing, drying, heating, crystallization 1- xM xO x(0<X<0.06) phase transformation intellectual material, crystallite dimension have obvious metal-semiconductor phase changing function less than 100 nanometers.When it is spent above 26 in temperature, aobvious milky, transmitance is below 30%, and temperature is higher, and transmitance is lower; When it had been lower than for the 26 lower times of temperature of spending, show colourless, transmitance 80%.
The thickness of described pattern glass layer 7 is 6mm.
The above is preferred embodiment of the present invention only, is not to limit scope of the invention process, and all equal variation and modifications of doing according to claim of the present invention all fall into the scope that patent of the present invention contains.

Claims (5)

1. the polycrystal silicon cell assembly of an adjustable transparent rate is characterized in that: comprise at least mutual bonding cell module back veneer, PVB film layers, the middle rete of sensitization, PVB film layers, polycrystalline silicon battery plate combination layer, PVB film layers and pattern glass layer from bottom to top.
2. the polycrystal silicon cell assembly of a kind of adjustable transparent rate according to claim 1 is characterized in that: the vanadium dioxide phase transformation intellectual material layer of rete for mixing in the middle of the described sensitization.
3. the polycrystal silicon cell assembly of a kind of adjustable transparent rate according to claim 2, it is characterized in that: described cell module back veneer is that thickness is 3mmPE plate or 8mm clear glass.
4. the polycrystal silicon cell assembly of a kind of adjustable transparent rate according to claim 3, it is characterized in that: the thickness of described pattern glass layer is 6mm.
5. the polycrystal silicon cell assembly of a kind of adjustable transparent rate according to claim 4, it is characterized in that: the thickness of described PVB film layers is 0.76mm.
CN2012104874439A 2012-11-26 2012-11-26 Polycrystalline silicon battery component with adjustable light transmittance Pending CN102956734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012104874439A CN102956734A (en) 2012-11-26 2012-11-26 Polycrystalline silicon battery component with adjustable light transmittance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012104874439A CN102956734A (en) 2012-11-26 2012-11-26 Polycrystalline silicon battery component with adjustable light transmittance

Publications (1)

Publication Number Publication Date
CN102956734A true CN102956734A (en) 2013-03-06

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Country Status (1)

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CN (1) CN102956734A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103746020A (en) * 2013-12-21 2014-04-23 揭阳市宏光镀膜玻璃有限公司 Solar cell module
CN104409541A (en) * 2014-10-30 2015-03-11 中山市亨立达机械有限公司 Adjustable light transmittance solar cell assembly
CN108010976A (en) * 2017-11-24 2018-05-08 江苏明钰新能源有限公司 A kind of fire-retardant polycrystalline silicon solar panel
WO2021184477A1 (en) * 2020-03-19 2021-09-23 中山瑞科新能源有限公司 Bipv photovoltaic module
WO2023050772A1 (en) * 2021-09-29 2023-04-06 永臻科技股份有限公司 Crystalline silicon bipv building component and manufacturing method therefor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050117623A1 (en) * 2003-12-01 2005-06-02 Nl-Nanosemiconductor Gmbh Optoelectronic device incorporating an interference filter
US20100147365A1 (en) * 2006-05-09 2010-06-17 The University Of North Carolina At Chapel Hill High fidelity nano-structures and arrays for photovoltaics and methods of making the same
CN201936902U (en) * 2010-11-24 2011-08-17 吉富新能源科技(上海)有限公司 Color-adjustable enhanced intelligent thin-film solar battery capable of realizing infrared light automatically switched along with temperature
TWM440530U (en) * 2011-12-16 2012-11-01 Sun Well Solar Corp Light transmission tunable photovoltaic panel and photovoltaic panel array

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050117623A1 (en) * 2003-12-01 2005-06-02 Nl-Nanosemiconductor Gmbh Optoelectronic device incorporating an interference filter
US20100147365A1 (en) * 2006-05-09 2010-06-17 The University Of North Carolina At Chapel Hill High fidelity nano-structures and arrays for photovoltaics and methods of making the same
CN201936902U (en) * 2010-11-24 2011-08-17 吉富新能源科技(上海)有限公司 Color-adjustable enhanced intelligent thin-film solar battery capable of realizing infrared light automatically switched along with temperature
TWM440530U (en) * 2011-12-16 2012-11-01 Sun Well Solar Corp Light transmission tunable photovoltaic panel and photovoltaic panel array

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103746020A (en) * 2013-12-21 2014-04-23 揭阳市宏光镀膜玻璃有限公司 Solar cell module
CN104409541A (en) * 2014-10-30 2015-03-11 中山市亨立达机械有限公司 Adjustable light transmittance solar cell assembly
CN108010976A (en) * 2017-11-24 2018-05-08 江苏明钰新能源有限公司 A kind of fire-retardant polycrystalline silicon solar panel
WO2021184477A1 (en) * 2020-03-19 2021-09-23 中山瑞科新能源有限公司 Bipv photovoltaic module
WO2023050772A1 (en) * 2021-09-29 2023-04-06 永臻科技股份有限公司 Crystalline silicon bipv building component and manufacturing method therefor

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Application publication date: 20130306