CN102956734A - Polycrystalline silicon battery component with adjustable light transmittance - Google Patents
Polycrystalline silicon battery component with adjustable light transmittance Download PDFInfo
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- CN102956734A CN102956734A CN2012104874439A CN201210487443A CN102956734A CN 102956734 A CN102956734 A CN 102956734A CN 2012104874439 A CN2012104874439 A CN 2012104874439A CN 201210487443 A CN201210487443 A CN 201210487443A CN 102956734 A CN102956734 A CN 102956734A
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- polycrystalline silicon
- battery component
- silicon battery
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- film layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a polycrystalline silicon battery component with adjustable light transmittance. The polycrystalline silicon battery component is characterized by comprising battery component back plates which are mutually bonded from bottom to top, a polyvinyl butyral (PVB) plastic sheet layer, a light-sensitive middle film layer, a PVB plastic sheet layer, a polycrystalline silicon battery piece combined layer, a PVB plastic sheet layer and a figured glass layer. When the polycrystalline silicon battery component is used in building integrated photovoltaics (BIPV), the indoor comfort level can be improved.
Description
Technical field:
The present invention relates to a kind of polycrystal silicon cell assembly of adjustable transparent rate.
Background technology:
Traditional polycrystal silicon cell assembly, light transmittance is non-adjustable, or is opaque, or is transparent, can't be along with the variation of ambient temperature, light transmittance changes, when its as the BIPV(photovoltaic building) when using, affect indoor comfort level.
Summary of the invention:
The object of the present invention is to provide a kind of polycrystal silicon cell assembly of adjustable transparent rate, when its as the BIPV(photovoltaic building) when using, can improve indoor comfort level.
A kind of polycrystal silicon cell assembly of adjustable transparent rate is characterized in that: comprise at least mutual bonding cell module back veneer, PVB film layers, the middle rete of sensitization, PVB film layers, polycrystalline silicon battery plate combination layer, PVB film layers and pattern glass layer from bottom to top.
As a kind of improvement of such scheme, the vanadium dioxide phase transformation intellectual material layer of rete for mixing in the middle of the described sensitization.
As the further improvement of such scheme, described cell module back veneer is that thickness is 3mmPE plate or 8mm clear glass.
Again step as such scheme improves, and the thickness of described pattern glass layer is 6mm.
Again step as such scheme improves, and the thickness of described PVB film layers is 0.76mm.
The present invention has following advantage: rete in the middle of the sensitization of the present invention, and when it is spent above 26 in temperature, aobvious milky, transmitance is below 30%, and temperature is higher, and transmitance is lower; When it had been lower than for the 26 lower times of temperature of spending, show colourless, transmitance 80%.Therefore surpass 26 when spending in temperature, the present invention can play the effect of sunshade, be lower than 26 when spending in temperature, the present invention is well daylighting again.With the present invention as the BIPV(photovoltaic building) when using, can strengthen indoor comfort level, as in hot summer, when temperature is higher than 26 when spending, but sunshade is to reduce room conditioning refrigeration expense; At Cold Winter, when temperature was lower than 26, again fully daylighting reduced the indoor heating expense.
Description of drawings:
Fig. 1 is structure cutaway view of the present invention.
Embodiment:
As shown in the figure, a kind of polycrystal silicon cell assembly of adjustable transparent rate comprises mutual bonding cell module back veneer 1, PVB film layers 2, the middle rete 3 of sensitization, PVB film layers 4, polycrystalline silicon battery plate combination layer 5, PVB film layers 6 and pattern glass layer 7 at least from bottom to top.
Described cell module back veneer 1 is that thickness is 3mmPE plate or 8mm clear glass.
Described PVB film layers 2,4,6 thickness are 0.76mm.Mainly play bonding upper and lower layer.
The vanadium dioxide phase transformation intellectual material layer of rete 3 for mixing in the middle of the described sensitization.It is the vanadium dioxide presoma that utilizes liquid phase deposition preparation to mix in PVB film layers 2, after filtration, the V that obtains after the washing, drying, heating, crystallization
1-
xM
xO
x(0<X<0.06) phase transformation intellectual material, crystallite dimension have obvious metal-semiconductor phase changing function less than 100 nanometers.When it is spent above 26 in temperature, aobvious milky, transmitance is below 30%, and temperature is higher, and transmitance is lower; When it had been lower than for the 26 lower times of temperature of spending, show colourless, transmitance 80%.
The thickness of described pattern glass layer 7 is 6mm.
The above is preferred embodiment of the present invention only, is not to limit scope of the invention process, and all equal variation and modifications of doing according to claim of the present invention all fall into the scope that patent of the present invention contains.
Claims (5)
1. the polycrystal silicon cell assembly of an adjustable transparent rate is characterized in that: comprise at least mutual bonding cell module back veneer, PVB film layers, the middle rete of sensitization, PVB film layers, polycrystalline silicon battery plate combination layer, PVB film layers and pattern glass layer from bottom to top.
2. the polycrystal silicon cell assembly of a kind of adjustable transparent rate according to claim 1 is characterized in that: the vanadium dioxide phase transformation intellectual material layer of rete for mixing in the middle of the described sensitization.
3. the polycrystal silicon cell assembly of a kind of adjustable transparent rate according to claim 2, it is characterized in that: described cell module back veneer is that thickness is 3mmPE plate or 8mm clear glass.
4. the polycrystal silicon cell assembly of a kind of adjustable transparent rate according to claim 3, it is characterized in that: the thickness of described pattern glass layer is 6mm.
5. the polycrystal silicon cell assembly of a kind of adjustable transparent rate according to claim 4, it is characterized in that: the thickness of described PVB film layers is 0.76mm.
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CN2012104874439A CN102956734A (en) | 2012-11-26 | 2012-11-26 | Polycrystalline silicon battery component with adjustable light transmittance |
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CN2012104874439A CN102956734A (en) | 2012-11-26 | 2012-11-26 | Polycrystalline silicon battery component with adjustable light transmittance |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103746020A (en) * | 2013-12-21 | 2014-04-23 | 揭阳市宏光镀膜玻璃有限公司 | Solar cell module |
CN104409541A (en) * | 2014-10-30 | 2015-03-11 | 中山市亨立达机械有限公司 | Adjustable light transmittance solar cell assembly |
CN108010976A (en) * | 2017-11-24 | 2018-05-08 | 江苏明钰新能源有限公司 | A kind of fire-retardant polycrystalline silicon solar panel |
WO2021184477A1 (en) * | 2020-03-19 | 2021-09-23 | 中山瑞科新能源有限公司 | Bipv photovoltaic module |
WO2023050772A1 (en) * | 2021-09-29 | 2023-04-06 | 永臻科技股份有限公司 | Crystalline silicon bipv building component and manufacturing method therefor |
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US20050117623A1 (en) * | 2003-12-01 | 2005-06-02 | Nl-Nanosemiconductor Gmbh | Optoelectronic device incorporating an interference filter |
US20100147365A1 (en) * | 2006-05-09 | 2010-06-17 | The University Of North Carolina At Chapel Hill | High fidelity nano-structures and arrays for photovoltaics and methods of making the same |
CN201936902U (en) * | 2010-11-24 | 2011-08-17 | 吉富新能源科技(上海)有限公司 | Color-adjustable enhanced intelligent thin-film solar battery capable of realizing infrared light automatically switched along with temperature |
TWM440530U (en) * | 2011-12-16 | 2012-11-01 | Sun Well Solar Corp | Light transmission tunable photovoltaic panel and photovoltaic panel array |
-
2012
- 2012-11-26 CN CN2012104874439A patent/CN102956734A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050117623A1 (en) * | 2003-12-01 | 2005-06-02 | Nl-Nanosemiconductor Gmbh | Optoelectronic device incorporating an interference filter |
US20100147365A1 (en) * | 2006-05-09 | 2010-06-17 | The University Of North Carolina At Chapel Hill | High fidelity nano-structures and arrays for photovoltaics and methods of making the same |
CN201936902U (en) * | 2010-11-24 | 2011-08-17 | 吉富新能源科技(上海)有限公司 | Color-adjustable enhanced intelligent thin-film solar battery capable of realizing infrared light automatically switched along with temperature |
TWM440530U (en) * | 2011-12-16 | 2012-11-01 | Sun Well Solar Corp | Light transmission tunable photovoltaic panel and photovoltaic panel array |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103746020A (en) * | 2013-12-21 | 2014-04-23 | 揭阳市宏光镀膜玻璃有限公司 | Solar cell module |
CN104409541A (en) * | 2014-10-30 | 2015-03-11 | 中山市亨立达机械有限公司 | Adjustable light transmittance solar cell assembly |
CN108010976A (en) * | 2017-11-24 | 2018-05-08 | 江苏明钰新能源有限公司 | A kind of fire-retardant polycrystalline silicon solar panel |
WO2021184477A1 (en) * | 2020-03-19 | 2021-09-23 | 中山瑞科新能源有限公司 | Bipv photovoltaic module |
WO2023050772A1 (en) * | 2021-09-29 | 2023-04-06 | 永臻科技股份有限公司 | Crystalline silicon bipv building component and manufacturing method therefor |
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Application publication date: 20130306 |