CN102965632A - Device for stabilizing target magnetic field intensity of physical vapor deposition chamber and method thereof - Google Patents
Device for stabilizing target magnetic field intensity of physical vapor deposition chamber and method thereof Download PDFInfo
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- CN102965632A CN102965632A CN2011102573451A CN201110257345A CN102965632A CN 102965632 A CN102965632 A CN 102965632A CN 2011102573451 A CN2011102573451 A CN 2011102573451A CN 201110257345 A CN201110257345 A CN 201110257345A CN 102965632 A CN102965632 A CN 102965632A
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Abstract
The invention provides a device for stabilizing the target magnetic field intensity of a physical vapor deposition chamber. The physical vapor deposition chamber includes a target and a magnet. The target has an effective surface used for sputtering a target material. The device for stabilizing the target magnetic field intensity of the physical vapor deposition chamber comprises: a detector, which is used for measuring a target consumed thickness value; and a position control component, which is used for adjusting the distance between the target and the magnet according to the target consumed thickness value. The invention also provides a method for stabilizing the target magnetic field intensity of the physical vapor deposition chamber. By means of the measurement of the detector and the adjustment of the position control component, the deposition rate stability of a target material in a physical vapor deposition process is enhanced, and the controllability of the whole process is higher.
Description
Technical field
The present invention relates to the ic manufacturing technology field, relate in particular to a kind of target magneticstrength stabilizing deyice and method thereof for physical vapor deposition chamber.
Background technology
Physical vapor deposition (following also be called for short " PVD ") processing procedure be a kind of known deposition material film that is used in the method for substrate, be commonly used to make semiconductor device.The PVD processing procedure is to finish in the high vacuum reaction chamber, contains substrate (for example wafer) and pre-deposition among the above-mentioned reaction chamber (chamber) in on-chip material solids source or slab, that is the PVD target.Sputter occurs after being bombarded by charged gaseous ion in the PVD target material, and the target material that sputters out is deposited on the surface of substrate, forms needed thin-film material.
Have many in order to finish the method for PVD, for example evaporation, electron beam evaporation plating, plasma spraying deposition and sputter (sputtering).At present, sputter is a kind of the most frequently used method of PVD that is used for carrying out.Wherein magnetron sputtering can greatly improving sputtering rate by extensive concern.Magnetron sputtering refers to add a quadrature field and electric field between negative electrode (being generally target) and anode (being generally substrate mount pad or plated film cavity wall that substrate to be plated is installed), in the vacuum plating cavity, be filled with needed rare gas element (being generally argon gas), under the effect of electric field, argon gas is ionized into argon ion (positively charged) and electronics, argon ion accelerates the bombardment target under the effect of electric field, sputter a large amount of target atom, be neutral target atom (or molecule) and be deposited on film forming on the substrate to be plated.Simultaneously, argon ion is emitted secondary electron during target in bombardment, and secondary electron is subject to the impact of magnetic field long-range navigation magnetic force in accelerating to fly to the process of substrate, be bound near in the plasma body zone of target material surface, and plasma density is very high in this zone.Under the acting in conjunction of electromagnetic field, the movement locus of secondary electron is to accelerate along direction of an electric field, the complex curve that advances around the field direction spiral simultaneously, so that the movement path of this secondary electron is elongated, in moving process, constantly bump with ar atmo and ionize out a large amount of argon ion bombardment targets, pass through that the energy of electronics reduces gradually behind the multiple impacts, break away from the constraint of magnetic line of force, away from target, finally fly to substrate to be plated with extremely low energy, so that the intensification of substrate to be plated is lower.
Magnetron sputtering utilizes magnetic field to fetter to prolong the movement path of secondary electron, changes the direction of motion of secondary electron, and improve the specific ionization of rare gas element and effectively utilize the energy of electronics, thus the lifting sputtering rate.Yet along with the consumption of target, change has occured in the distance between target material surface and the magnet, and the magneticstrength of target material surface is changed, thereby has affected the bombardment of ion pair target, has finally changed sedimentation rate.Therefore, how making the magneticstrength of target material surface stable is problem demanding prompt solution to keep sedimentation rate.
Summary of the invention
Technical problem to be solved by this invention has provided a kind of target magneticstrength stabilizing deyice and method thereof for physical vapor deposition chamber, to solve the stable problem of magneticstrength that how to make target material surface.
In order to solve the problems of the technologies described above, technical scheme of the present invention is: a kind of target magneticstrength stabilizing deyice for physical vapor deposition chamber is provided, described physical vapor deposition chamber comprises target and magnet, described target has effective surface, in order to sputter target material, described target magneticstrength stabilizing deyice for physical vapor deposition chamber also comprises: detector, the one-tenth-value thickness 1/10 that consumes in order to measure described target; Position control component is adjusted distance between described target and the described magnet according to the one-tenth-value thickness 1/10 of described target consumption.
Further, described position control component comprises the data sink unit, and described data sink unit is connected with described detector signal, the one-tenth-value thickness 1/10 that consumes in order to receive target that described detector measures.
Further, described position control component also comprises threaded rod, in order to adjust the distance between described target and the described magnet.
Further, described detector is weighing apparatus.
Further, described detector is infrared generator.
Further, described detector is the thick instrument of acoustic side.
The invention provides also provides a kind of for the stable method of the target magneticstrength of physical vapor deposition chamber, comprising: utilize detector to measure the one-tenth-value thickness 1/10 that target consumes, and described one-tenth-value thickness 1/10 is sent to position control component; Described position control component is adjusted distance between described target and the described magnet according to described one-tenth-value thickness 1/10, makes the effective surface magneticstrength of described target stable.
Further, described position control component comprises the data sink unit, and described data sink unit is connected with described detector signal, the one-tenth-value thickness 1/10 that consumes in order to receive target that described detector measures.
Further, described position control component also comprises threaded rod, in order to adjust the distance between described target and the described magnet.
Target magneticstrength stabilizing deyice for physical vapor deposition chamber provided by the invention, utilize detector to measure the one-tenth-value thickness 1/10 that target consumes, and according to this one-tenth-value thickness 1/10, utilize the distance between position control component adjustment target and the magnet, so that the magneticstrength on target surface is stable.
Provided by the invention for the stable method of the target magneticstrength of physical vapor deposition chamber, by the measurement of detector and the adjustment of position control component, strengthened the stability of target material sedimentation rate in processes of physical vapor deposition, made the controllability of whole technological process higher.
Description of drawings
Fig. 1 is the structural representation of the target magneticstrength stabilizing deyice that is used for physical vapor deposition chamber that provides of the embodiment of the invention one;
Fig. 2 is the flow chart of steps of the stable method of the target magneticstrength that is used for physical vapor deposition chamber that provides of the embodiment of the invention one;
Fig. 3 is the structural representation of the target magneticstrength stabilizing deyice that is used for physical vapor deposition chamber that provides of the embodiment of the invention two.
Embodiment
Below in conjunction with the drawings and specific embodiments a kind of target magneticstrength stabilizing deyice and method thereof for physical vapor deposition chamber that the present invention proposes is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-accurately ratio, only be used for convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, a kind of target magneticstrength stabilizing deyice for physical vapor deposition chamber is provided, utilizes detector to measure the one-tenth-value thickness 1/10 that target consumes, and according to this one-tenth-value thickness 1/10, utilize the distance between position control component adjustment target and the magnet, so that the magneticstrength on target surface is stable.It is a kind of for the stable method of the target magneticstrength of physical vapor deposition chamber that the present invention also provides, by the measurement of detector and the adjustment of position control component, strengthened the stability of target material sedimentation rate in processes of physical vapor deposition, made the controllability of whole technological process higher.
Embodiment one
Fig. 1 is the structural representation of the target magneticstrength stabilizing deyice that is used for physical vapor deposition chamber that provides of the embodiment of the invention one.With reference to Fig. 1, physical vapor deposition chamber 19 comprises target 11 and magnet 12, and described target 12 has effective surface 13, in order to sputter target material, the target magneticstrength stabilizing deyice that is used for physical vapor deposition chamber comprises: detector, the one-tenth-value thickness 1/10 that consumes in order to measure described target 11; Position control component 15, the one-tenth-value thickness 1/10 that consumes according to described target 11 is adjusted the distance between described target 11 and the described magnet 12.
Further, described position control component 15 comprises a data sink unit, and described data sink unit is connected with described detector signal, the one-tenth-value thickness 1/10 that consumes in order to receive target that described detector measures.The one-tenth-value thickness 1/10 that target 11 consumes in the present embodiment, is connected with data transmission line between described detector and the described position control component 15, so that can transfer to data sink unit the position control component 15 from detector.Described target magneticstrength stabilizing deyice for physical vapor deposition chamber is positioned at physical vapor deposition chamber 19, and described physical vapor deposition chamber 19 is vacuum chamber.
Particularly, described position control component 15 also comprises threaded rod, in order to the distance between the described target 11 of accurate adjustment and the described magnet 12.Opposite face place at the effective surface 13 of target 11 is provided with negative electrode 16, below target 11, be provided with by the substrate 17 of sputter, between substrate 17 and target 11, be distributed with plasma body, substrate bearing platform 18 place substrate 17 below, be used for supporting substrate 17, the bottom of substrate bearing platform 18 is provided with anode 16 '.
In the present embodiment, detector is a weighing apparatus 14, and weighing apparatus 14 is positioned at the side of target 11, is used for measuring the relative weight of target 11, and the weight that the target 11 that records consumes is converted to the variable quantity of target 11 thickness.Described magnet 12 is horse-shoe magnet.
Fig. 2 is for being the flow chart of steps of the stable method of the target magneticstrength that is used for physical vapor deposition chamber that provides of the embodiment of the invention one.With reference to Fig. 2, be used for the stable method of target magneticstrength of physical vapor deposition chamber, comprising:
S21, utilize detector to measure the one-tenth-value thickness 1/10 that target consumes, and described one-tenth-value thickness 1/10 is sent to position control component;
S22, described position control component adjust distance between described target and the described magnet according to described one-tenth-value thickness 1/10, make the effective surface magneticstrength of described target stable.
In the process of physical vapor deposition, along with the consumption of target material, the weight of target 11 reduces gradually, and weighing apparatus 14 records the consumption of target material and is converted into the variable quantity of target 11 thickness.The variable quantity of thickness is sent to position control component 15, the thickness that position control component 15 consumes according to described target 11 is adjusted the distance between described target 11 and the described magnet 12, because the consumption of target, so that the effective surface 13 of target 11 is close to the distance change of magnet 12, therefore, position control component 15 moves magnet 12 towards the direction away from target 11, mobile distance is the thickness that target 11 consumes.Assurance magnet 12 is kept fixing distance with target 11 effective surfaces 13, can guarantee to produce stable magneticstrength at the effective surface 13 of target 11, thereby strengthened the stability of target material sedimentation rate in processes of physical vapor deposition, made the controllability of whole technological process higher.
Embodiment two
Fig. 3 is the structural representation of the target magneticstrength stabilizing deyice that is used for physical vapor deposition chamber that provides of the embodiment of the invention two.With reference to Fig. 3, be with the difference of device among the embodiment one, described detector is the thick instrument 34 of an acoustic side, described acoustics thickness tester 34 is installed in the opposite face of the effective surface 13 of target 11, the acoustics thickness tester can utilize cement bond logging to get the one-tenth-value thickness 1/10 that target 11 consumes, and the variable quantity of the thickness that records is sent to position control component 15.
Embodiment three
In the present embodiment, described detector is an infrared generator (not shown), described infrared generator is positioned at the ingress of physical vapor deposition chamber 19, infrared generator emission infrared rays arrives effective surface 13 places of target 11, record the variable quantity of target 11 thickness, and the variable quantity of the thickness that records is sent to position control component 15.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (9)
1. target magneticstrength stabilizing deyice that is used for physical vapor deposition chamber, described physical vapor deposition chamber comprises target and magnet, described target has effective surface, in order to sputter target material, it is characterized in that, also comprises:
Detector, the one-tenth-value thickness 1/10 that consumes in order to measure described target;
Position control component is adjusted distance between described target and the described magnet according to the one-tenth-value thickness 1/10 of described target consumption.
2. the target magneticstrength stabilizing deyice for physical vapor deposition chamber according to claim 1, it is characterized in that, described position control component comprises the data sink unit, described data sink unit is connected with described detector signal, the one-tenth-value thickness 1/10 that consumes in order to receive target that described detector measures.
3. the target magneticstrength stabilizing deyice for physical vapor deposition chamber according to claim 1 is characterized in that described position control component also comprises threaded rod, in order to adjust the distance between described target and the described magnet.
4. each the target magneticstrength stabilizing deyice that is used for physical vapor deposition chamber in 3 according to claim 1 is characterized in that described detector is weighing apparatus.
5. each the target magneticstrength stabilizing deyice that is used for physical vapor deposition chamber in 3 according to claim 1 is characterized in that described detector is infrared generator.
6. each the target magneticstrength stabilizing deyice that is used for physical vapor deposition chamber in 3 according to claim 1 is characterized in that described detector is the thick instrument of acoustic side.
7. stable method of target magneticstrength that is used for physical vapor deposition chamber comprises:
Utilize detector to measure the one-tenth-value thickness 1/10 that target consumes, and described one-tenth-value thickness 1/10 is sent to position control component;
Described position control component is adjusted distance between described target and the magnet according to described one-tenth-value thickness 1/10, makes the effective surface magneticstrength of described target stable.
8. according to claim 7 for the stable method of the target magneticstrength of physical vapor deposition chamber, it is characterized in that, described position control component comprises the data sink unit, described data sink unit is connected with described detector signal, the one-tenth-value thickness 1/10 that consumes in order to receive target that described detector measures.
9. according to claim 7ly it is characterized in that for the stable method of the target magneticstrength of physical vapor deposition chamber described position control component also comprises threaded rod, in order to adjust the distance between described target and the described magnet.
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| CN2011102573451A CN102965632A (en) | 2011-09-01 | 2011-09-01 | Device for stabilizing target magnetic field intensity of physical vapor deposition chamber and method thereof |
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| CN2011102573451A CN102965632A (en) | 2011-09-01 | 2011-09-01 | Device for stabilizing target magnetic field intensity of physical vapor deposition chamber and method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104746023A (en) * | 2013-12-26 | 2015-07-01 | 深圳市微普诺薄膜技术有限公司 | Motor closed-loop control magnetron sputtering plane cathode device |
| CN106591787A (en) * | 2016-11-17 | 2017-04-26 | 燕山大学 | Preparation method for patterned film with gradually changed thickness |
| US20170133283A1 (en) * | 2015-11-06 | 2017-05-11 | Lam Research Corporation | Sensor and adjuster for a consumable |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040011640A1 (en) * | 2002-07-16 | 2004-01-22 | Winfried Sabisch | PVD method and PVD apparatus |
| CN1890399A (en) * | 2003-12-12 | 2007-01-03 | 应用材料公司 | Mechanism for varying the spacing between sputter magnetron and target |
-
2011
- 2011-09-01 CN CN2011102573451A patent/CN102965632A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040011640A1 (en) * | 2002-07-16 | 2004-01-22 | Winfried Sabisch | PVD method and PVD apparatus |
| CN1890399A (en) * | 2003-12-12 | 2007-01-03 | 应用材料公司 | Mechanism for varying the spacing between sputter magnetron and target |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104746023A (en) * | 2013-12-26 | 2015-07-01 | 深圳市微普诺薄膜技术有限公司 | Motor closed-loop control magnetron sputtering plane cathode device |
| CN104746023B (en) * | 2013-12-26 | 2018-01-09 | 深圳市速普仪器有限公司 | Motor closed-loop control magnetron sputtering planar cathode device |
| US20170133283A1 (en) * | 2015-11-06 | 2017-05-11 | Lam Research Corporation | Sensor and adjuster for a consumable |
| US10985078B2 (en) * | 2015-11-06 | 2021-04-20 | Lam Research Corporation | Sensor and adjuster for a consumable |
| CN106591787A (en) * | 2016-11-17 | 2017-04-26 | 燕山大学 | Preparation method for patterned film with gradually changed thickness |
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Application publication date: 20130313 |