CN102989720A - Method and device for eliminating nanoparticles on surfaces of substrates under assistance of laser - Google Patents
Method and device for eliminating nanoparticles on surfaces of substrates under assistance of laser Download PDFInfo
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- CN102989720A CN102989720A CN2012103912842A CN201210391284A CN102989720A CN 102989720 A CN102989720 A CN 102989720A CN 2012103912842 A CN2012103912842 A CN 2012103912842A CN 201210391284 A CN201210391284 A CN 201210391284A CN 102989720 A CN102989720 A CN 102989720A
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Abstract
The invention relates to a method and device for eliminating nanoparticles on the surfaces of substrates, such as a silicon wafer under the assistance of laser and in particular relates to a method and device which are characterized in that air is subjected to dielectric breakdown by using laser focusing to form sharply inflated plasmas, the air around the plasmas is rapidly compressed into a stronger shock front, and the stronger shock front directly acts on the surface of the substrate so that the nanoparticles are separated from the substrate, such as a wafer or a photomask under the action of force or rolling torque. The method and device disclosed by the invention are particularly suitable for removing 100nm and even smaller particles on the surface of the substrate.
Description
Technical field
The present invention relates to a kind of laser assisted and remove the method and apparatus of the matrix surface nano particle such as silicon wafer, refer in particular to a kind of Laser Focusing that utilizes and air dielectric is punctured the plasma that forms rapid expansion, plasma surrounding air is become stronger shock front by Fast Compression and directly acts on matrix surface and make nano particle be subject to the effect of power or rolling moment and the method and apparatus of the Matrix separations such as wafer or photomask, and the method and device are particularly useful for removing the particle of matrix surface 100 nm and smaller szie.
Background technology
The removal of matrix surface nano particle is the key issue in the new and high technologies such as micromachine, precision optics, microelectronics, semiconductor, nano particle can make the micromachine surface produce the fatal damages such as cut even crackle, greatly reduce the resolution ratio of precision optics equipment, causing miniature high density memory device, super large-scale integration short circuit or performance greatly to reduce, is to need the urgent problem that solves in the new and high technologies such as micromachine, precision optics, semiconductor, microelectronics; Along with microelectronic device and semiconductor dimensions are more and more less, the particle of removing 100 nm and smaller szie is becoming a kind of new technological challenge, particle is more and more less so that remove and to become very difficult, and conventional removal method such as Chemical cleaning, ultrasonic cleaning and machinery are scrubbed etc., seem unable to do what one wishes; Simultaneously, Chemical cleaning, ultrasonic cleaning etc. are corrosion and secondary pollution easily, and waste resource and contaminated environment; Machinery is scrubbed easy damage matrix surface.
Pulse laser beam can make concave lens focus place energy density and rapid rising of local temperature cause air dielectric to puncture the plasma that forms rapid expanding under the focussing force of convex lens, plasma surrounding air is compressed and become the strong shock wave front, shock front directly acts on the matrix surfaces such as silicon wafer or mask makes nano particle be subject to effect and the Matrix separation of power or rolling moment, form Cathode plasma explosion based on Laser Focusing and remove the matrix surface nano particles such as silicon wafer, because it can guarantee that nano particle reset procedure environmental drying and active force are contactless force, be to avoid polluting and damaging the effective ways that to remove fast 100 nm and smaller szie nano particle under the prerequisite.
Summary of the invention
The present invention is directed to the easy damage that exists in the conventional nano particle sweep-out method and pollute the difficult problem of removing of matrix and 100nm and smaller szie particle, propose the method and apparatus that a kind of laser assisted is removed the matrix surface nano particle.
A kind of laser assisted is removed the method for matrix surface nano particle, by convex lens pulse laser beam is focused on concave lens focus, focus place energy density and temperature sharply rise and make air dielectric puncture the plasma that produces rapid expanding, the rapid compress ambient air of plasma makes it to directly act on the matrix surfaces such as silicon wafer as the strong shock wave front, make nano particle be subject to power or rolling moment effect and overcome bonding force and Matrix separation between nano particle and the matrix, thereby reach the purpose of removing the matrix surface nano particle; Utilize the method can effectively realize the especially removing of 100 nm and smaller szie nano particle of the matrix surface nano particles such as silicon wafer, and can be to matrix injury and pollution.
The invention provides laser assisted and remove the device of matrix surface nano particle, comprise Computer Control Unit, Nd:YAG pulse laser, convex lens, three axle fine motions control platform and monitoring device; Convex lens are used for making pulse laser beam to focus on the plasma that focus sharply expands air dielectric breakdown generation; Computer Control Unit control Nd:YAG pulse laser and three axle fine motions control platform, move by controlling three axle fine motions control platform control matrix, remove the matrix surface nano particle by regional burst, finish until whole matrix target surface area nano particle is removed; Sharply the expand force value of strong shock wave front arrival matrix surface of formation of vertical range, the plasma of the quantity of monitoring device monitoring matrix surface nano particle and size, body upper surface and relative position, body upper surface and the concave lens focus of plasma, as the foundation that is used for controlling three axle fine motions control platform and regulating the technological parameter of Nd:YAG pulse laser, the monitoring device data measured feeds back to Computer Control Unit.
For achieving the above object, the present invention takes following technical scheme:
A kind of laser assisted is removed the method that the matrix surface nano particle is removed, and it may further comprise the steps:
(1) matrix that need is carried out clearance of particles is fixed on the three axle fine motions control platform;
(2) regulating three axle fine motions control platform, vertical mobile to make body upper surface be 1-2 mm to the vertical range of concave lens focus; Regulating three axle fine motions control platform left-right and front-back moves under (being the laser beam focal position) that matrix surface is positioned at be about to the plasma that produces;
(3) the emission pulse laser bundle penetrates convex lens and focuses in lens focus, the plasma that focus place air is formed rapid expansion by dielectric breakdown is compressed rapidly surrounding air and becomes the strong shock wave front, and the strong shock wave front directly acts on matrix surface makes nano particle be subject to effect and the Matrix separation of power or rolling moment.
The innovation of the principle of the invention is that the strong shock wave front of the rapid inflate compression air formation of the plasma that utilizes Laser Focusing to produce is as the power source of removing nano particle, so that nano particle overcomes and matrix between bonding force and Matrix separation, because this method is implemented in the dry environment and in the implementation process with matrix surface and without directly contacting, matrix damage and the pollution of having avoided conventional removing means to bring, especially can avoiding polluting and damage the removing that effectively realizes 100 nm and smaller szie nano particle under the prerequisite, be a kind of brand-new nano particle sweep-out method.
Described a kind of laser assisted is removed the method for matrix surface nano particle, and it is characterized in that: described matrix comprises silicon wafer and mask matrix.
Described a kind of laser assisted is removed the method for matrix surface nano particle, and it is characterized in that: described pulse laser beam is the Nd:YAG pulse laser, pulsewidth 1064 nm, pulse energy 150 ~ 45 0mJ, repetition rate 10 Hz, pulsewidth 5 ~ 10ns.
Described a kind of laser assisted is removed the method for matrix surface nano particle, and it is characterized in that: described focal length of convex lens is 100 mm.
Described a kind of laser assisted is removed the method for matrix surface nano particle, it is characterized in that: described pulse laser penetrates convex lens sharply rises focus place energy density and local temperature in lens focus focusing, thereby cause the lens focus air dielectric to puncture the plasma that forms rapid expanding, plasma is compressed rapidly surrounding air and becomes the strong shock wave front, overcomes bonding force and Matrix separation between nano particle and matrix thereby shock front directly acts on effect that matrix surface makes nano particle be subject to power or rolling moment.
Described a kind of laser assisted is removed the method and apparatus of matrix surface nano particle, it is characterized in that: described emission pulse laser is repeatedly emission, and emitting times is decided according to the matrix surface clearance of particles situation of monitoring device feedback.
The present invention has following advantage:
(1) focusing that the present invention is based on pulse laser punctures the plasma effect that air forms rapid expansion, the contactless force that produces by the rapid compress ambient air of plasma is realized the removing to the matrix surface nano particle, damage, corrosion and the pollution problem of having avoided routine operation that matrix is caused, especially can avoiding polluting and damage the removing that effectively realizes 100 nm and smaller szie nano particle under the prerequisite, be a kind of brand-new nano particle sweep-out method.
(2) the used laser pulse width of the present invention is 5 ~ 10 ns, so reset procedure has ultrafast characteristics, can realize that nano particle separated with matrix moment, and the matrix surface nano particle was removed by moment, and the compole weak point only is 60-120 ns when power or moment loading.
(3) because just focusing at the concave lens focus place, laser of the present invention forms plasma, plasma center (focus) still has the mm apart from 1-2 apart from matrix surface, and the high temperature that laser can not shine directly into matrix surface and generation can not have influence on matrix, matrix be produced ablate.
(4) the present invention also can regulate pulsed laser energy, pulse laser emitting times by computer control as required, is convenient to come regulation and control according to matrix surface nano particle removing situation.
In sum, the present invention punctures the removing that plasma effect that air forms rapid expansion is applied to nano particle to the focusing of laser, can avoid reset procedure to pollution, corrosion and the damage of matrix, can realize simultaneously the quick removing of nano particle, the active force of reset procedure is convenient to regulate, and has broad application prospects in nano particle removing field.
Description of drawings
Fig. 1 is that laser assisted is removed the nano particle device;
(1) Computer Control Unit, (2) Nd:YAG pulse laser, (3) laser beam, (4) convex lens, (5) plasma, (6) nano particle, (7) matrix, (8) three axle fine motions control platform, (9) monitoring device;
Fig. 2 (a) is the surface that silicon wafer adhered to cerium oxide particles (diameter 60 nm) before laser was removed, and (b) is silicon wafer surface after the laser removing, and dotted line is not laser removing zone and the line of demarcation in laser removing zone among the figure;
Fig. 3 (a) is the surface that silicon wafer adhered to cerium oxide particles (diameter 30-400 nm) before laser was removed, and (b) is silicon wafer surface after the laser removing, and dotted line is not laser removing zone and the line of demarcation in laser removing zone among the figure.
The specific embodiment
Describe details and the working condition of the device of the matrix that the present invention proposes in detail below in conjunction with accompanying drawing.
Carry out laser assisted removing nano particle device with the present invention and comprise Computer Control Unit 1, Nd:YAG pulse laser 2, convex lens 4, three axle fine motions control platform 8, monitoring device 9; Convex lens 4 are used for making pulse laser beam 3 to focus on the plasma 5 that focus sharply expands air dielectric breakdown generation; The surface of convex lens 4 can be covered with antireflection coatings simultaneously, and this coating helps convex lens aggregation laser bundle 3 energy; Computer Control Unit 1 control Nd:YAG pulse laser 2 and three axle fine motion control platforms 8, move by controlling three axle fine motions control platform, 8 control matrixes 7, remove matrix surface nano particle 6 by regional burst, finish until whole matrix 7 target surface area nano particles 6 are removed.Sharply the expand strong shock wave front that forms of vertical range, the plasma 5 that monitoring device 9 is used for monitoring the quantity of nano particle 6 and size, matrix 7 upper surfaces and relative position, matrix 7 upper surfaces and convex lens 4 focuses of plasma 5 arrives the force value of matrix surface, as the foundation of the technological parameter that is used for controlling three axle fine motions control platform 8 and adjusting Nd:YAG pulse laser 2; Monitoring device 9 data measureds feed back to Computer Control Unit 1.
At first will need the matrix 7 of clearance of particles to be fixed in three axle fine motions control platform 8, then carry out translation by Computer Control Unit 1 control three axle fine motions control platform 8, under the plasma 5 that matrix 7 upper surfaces is positioned at be about to produce, carry out vertical fine motion by Computer Control Unit 1 control three axle fine motions control platform 8 again, making the vertical range of matrix 7 upper surfaces and convex lens 4 focuses is 1-2 mm; Remove regional requirement according to matrix 7 surfaces, generate by Computer Control Unit 1 programming and remove track and determine laser technical parameters; Emission short pulse laser beam 3, laser beam 3 passes convex lens 4 sharply rises focus place energy density and local temperature in the focus focusing of convex lens 4, thereby cause convex lens 4 focus place air dielectric to puncture the plasma 5 that forms rapid expanding, plasma 5 makes surrounding air compressed and become the strong shock wave front, thereby shock front directly acts on effect that matrix 7 surfaces make nano particle 6 be subject to power or rolling moment and overcomes between nano particle 6 and matrix 7 bonding force and separate with matrix 7, realizes the removing of matrix 7 nano surface particles 6.The data that Computer Control Unit 1 feeds back according to monitoring device 9; parallel control Nd:YAG pulse laser 2 and three axle fine motions control platform 8, guarantee matrix 7 upper surfaces be positioned at plasma 5 under, the vertical range of matrix 7 upper surfaces and convex lens 4 focuses is 1-2 mm.
Nd:YAG pulse laser 2 sends energy at 150 ~ 450 mJ, wavelength is 1064 nm, repetition rate is 10 Hz, pulsewidth is the pulse laser beam 3 of 5 ~ 10 ns, laser beam 3 passes convex lens 4 makes focus place energy density and local temperature sharply rise under the focussing force of convex lens 4, thereby cause convex lens 4 focus place air dielectric to puncture the plasma 5 that forms rapid expanding, plasma 5 makes surrounding air compressed and become the strong shock wave front, thereby shock front directly acts on effect that matrix 7 surfaces make nano particle 6 be subject to power or rolling moment and overcomes between nano particle 6 and matrix 7 bonding force and separate with matrix 7, realizes the removing of matrix 7 nano surface particles 6.Sharply the expand strong shock wave front that forms of vertical range, the plasma 5 that monitoring device 9 is used for monitoring the quantity of nano particle 6 and size, matrix 7 upper surfaces and relative position, matrix 7 upper surfaces and convex lens 4 focuses of plasma 5 arrives the force value of matrix surface, as the foundation of the technological parameter that is used for controlling three axle fine motions control platform 8 and adjusting Nd:YAG pulse laser 2.Computer Control Unit 1 control three axle fine motions control platform 8 moves, and removes matrix 7 nano surface particles 6 until the removing of whole matrix 7 surf zone nano particles is finished by regional burst.
Embodiment:
Below remove the example of matrix surface nano particle for laser assisted, adopt the Thales laser instrument that silicon wafer surface cerium oxide particles (diameter 60 nm) is removed, the silicon wafer upper surface is 1.5 mm to the vertical range of concave lens focus, and laser (energy 370 mJ, wavelength 1064 nm, repetition rate 10 Hz, pulsewidth are 5 ns) focuses on the formation Cathode plasma explosion and removed silicon wafer matrix surface nano particle; Fig. 2 (a) is the surface that silicon wafer adhered to cerium oxide particles (diameter 60 nm) before laser was removed, and (b) is silicon wafer surface after the laser removing, and dotted line is not laser removing zone and the line of demarcation in laser removing zone among the figure; We can find out after the laser emission from figure, and silicon wafer surface cerium oxide particles (diameter 60 nm) is effectively removed, and the silicon wafer surface cleaning is without spot and not damaged; Fig. 3 (a) is the surface that silicon wafer adhered to cerium oxide particles (diameter 30-400 nm) before laser was removed, (b) be silicon wafer surface after laser is removed, dotted line is not laser removing zone and the line of demarcation in laser removing zone among the figure, we can find out after the laser emission from figure, silicon wafer surface cerium oxide particles (diameter 30-400 nm) is effectively removed, and the silicon wafer surface cleaning is without spot and not damaged.
Claims (4)
1. a laser assisted is removed the method that the matrix surface nano particle is removed, and it is characterized in that: may further comprise the steps:
(1) matrix that need is carried out clearance of particles is fixed on the three axle fine motions control platform;
(2) regulating three axle fine motions control platform, vertical mobile to make body upper surface be 1-2 mm to the vertical range of concave lens focus; Regulating three axle fine motions control platform left-right and front-back moves under (being the laser beam focal position) that matrix surface is positioned at be about to the plasma that produces;
(3) the emission pulse laser bundle penetrates convex lens and focuses in lens focus, the plasma that focus place air is formed rapid expansion by dielectric breakdown is compressed rapidly surrounding air and becomes the strong shock wave front, and the strong shock wave front directly acts on matrix surface makes nano particle be subject to effect and the Matrix separation of power or rolling moment.
2. a kind of laser assisted as claimed in claim 1 is removed the method that the matrix surface nano particle is removed, and it is characterized in that: described matrix comprises silicon wafer and mask matrix.
3. a kind of laser assisted as claimed in claim 1 is removed the method for matrix surface nano particle, and it is characterized in that: described pulse laser beam is the Nd:YAG pulse laser, pulsewidth 1064 nm, pulse energy 150 ~ 45 0mJ, repetition rate 10 Hz, pulsewidth 5 ~ 10ns.
4. a kind of laser assisted as claimed in claim 1 is removed the method for matrix surface nano particle, and it is characterized in that: described focal length of convex lens is 100 mm.
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| CN104907681A (en) * | 2015-07-06 | 2015-09-16 | 哈尔滨工业大学 | Laser aided type plasma processing method |
| CN104916519A (en) * | 2015-07-06 | 2015-09-16 | 哈尔滨工业大学 | Fire-polishing auxiliary inductively coupled plasma processing apparatus |
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| CN109261647A (en) * | 2018-08-31 | 2019-01-25 | 融铨半导体（苏州）有限公司 | A kind of laser cleaning method of carborundum graphite load plate |
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| CN113058935A (en) * | 2021-04-30 | 2021-07-02 | 浙江工业大学 | Method for cleaning micro-nano particles by underwater double-beam pulse laser induced shock waves |
| CN113172048A (en) * | 2021-04-28 | 2021-07-27 | 浙江工业大学 | Method and device for synchronously detecting removal of pulse laser induced shock wave particles |
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| CN104916519A (en) * | 2015-07-06 | 2015-09-16 | 哈尔滨工业大学 | Fire-polishing auxiliary inductively coupled plasma processing apparatus |
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| CN113058935A (en) * | 2021-04-30 | 2021-07-02 | 浙江工业大学 | Method for cleaning micro-nano particles by underwater double-beam pulse laser induced shock waves |
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Application publication date: 20130327 |