CN102990480B - Optical component surface cleaning method based on ion beam polishing - Google Patents
Optical component surface cleaning method based on ion beam polishing Download PDFInfo
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- CN102990480B CN102990480B CN201210553986.6A CN201210553986A CN102990480B CN 102990480 B CN102990480 B CN 102990480B CN 201210553986 A CN201210553986 A CN 201210553986A CN 102990480 B CN102990480 B CN 102990480B
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Abstract
The invention discloses an optical component surface cleaning method based on ion beam polishing. The method comprising the following steps of: machining the surface of a machining object by adopting an ion beam polishing method based on a low-energy ion sputtering principle by taking an optical component subjected to single-point diamond turning or magnetorheological polishing as the machining object; during the machining process, controlling ion beams to uniformly sweep the surface of the optical component; and after the machining is concluded, cleaning the surface of the optical component. The optical component surface cleaning method disclosed by the invention is simple and practicable, low in requirements on equipment, and capable of reducing the surface roughness of the optical surface component and removing the surface impurities of the optical component.
Description
Technical field
The present invention relates to the Ultraprecision Machining field of optical element, particularly relate to a kind of method of optical element surface being cleaned based on low energy ion sputtering effect.
Background technology
KDP(KH
2pO
4) crystal is a kind of very excellent non-linear optical crystal material, there is the features such as larger nonlinear optical coefficients, wider transmission region, excellent optical homogeneity and higher laser damage threshold, be now widely used in the high-tech areas such as laser frequency-doubling device, parametric oscillation, Electro-optical Modulation, PZT (piezoelectric transducer) and fast optical switch based.Especially in inertial confinement laser fusion field, KDP crystal is the best wavelength conversion optical element improving nuclear fusion reaction efficiency.
Inertial confinement fusion ICF laser aid requires the KDP crystal photoelement of heavy caliber, high-precision surface shape quality, high laser damage threshold, excellent surface roughness.But, low, the easy fragmentation of KDP crystal macrohardness, easily deliquescence, anisotropy, there is the characteristic that relatively high thermal coefficient of expansion etc. is unfavorable for optical manufacturing, huge challenge is proposed to Ultra-precision Turning.Single point diamond cutting (Single Point Diamond Turing, SPDT) be the optimal processing method of KDP crystal, but Single point diamond turning o not only can produce obvious knife mark and Microscale waveness at finished surface, and produce surface and the sub-surface damages such as such as brittle crush on KDP surface, reduce the laser damage threshold of KDP crystal.In addition, the anisotropy due to KDP plane of crystal hardness causes cutting surface quality and face shape error to present anisotropy, is difficult to reach higher surface figure accuracy.
The J. A. Menapace in U.S. LLNL laboratory and the Peng little Qiang of the National University of Defense technology etc. adopt MRF (Magnetorheological Finishing, MRF) technique effectively removes the turning knife mark of KDP plane of crystal, Microscale waveness and brittle crush, and reduces the impact of anisotropy on surface figure accuracy by variable residence time.Technique of Magnetorheological Finishing utilizes the rheological characteristic of Magnetorheologicai polishing liquid in magnetic field to carry out polishing to optical element, Magnetorheologicai polishing liquid is ejected into polishing wheel outer surface through nozzle, polishing wheel rotates brings liquid into polishing area, under the Actions of Gradient Magnetic Field of high strength, Magnetorheologicai polishing liquid in this region becomes and has viscoplastic Bingham medium, hardness, viscosity become large, form tool effigurate " flexible polishing mould ", after leaving the magnetic fields of machining area, Magnetorheologicai polishing liquid reverts to after liquid condition is recycled by recovery system and again enters circulation.Wherein, iron powder is the basis realizing magnetorheological polishing solution rheology energy.Also Just because of this, MRF is difficult to avoid the impurity such as the iron powder in magnetic rheological liquid to embed the soft KDP plane of crystal of matter, and the iron powder of embedding will strengthen the absorption to laser, the laser damage threshold of reduction KDP crystal.Therefore, the iron powder how removing MRF embedding KDP plane of crystal is the major issue that Ultra-precision Turning faces.
Because KDP crystal quality is very soft, easily leaves irregular cut at plane of crystal with lens wiping paper wiping, thus reduce surface quality.In Ultrasonic Cleaning, the edge of work has small KDP particle detachment, and the KDP particle come off is under the effect of cavitation bubble, and striking work is surperficial, thus heavy damage finished surface.The cleaning method of existing KDP plane of crystal is all to be improved.
Summary of the invention
The technical problem to be solved in the present invention overcomes the deficiencies in the prior art, provides a kind of simple, low for equipment requirements, optical element surface cleaning method based on ion beam polishing that can reduce optical surface element surface roughness, remove optical element surface impurity.
For solving the problems of the technologies described above, the technical scheme that the present invention proposes is a kind of optical element surface cleaning method based on ion beam polishing, comprise the following steps: using the optical element after Single point diamond turning o or MRF as processing object, adopt method for polishing ion beam (the Ion Beam Figuring based on low energy ion sputtering principle, IBF) surface of this processing object is processed, in process, control ion beam and even sweeping is carried out to optical element surface, after process finishing, complete the cleaning to optical element surface.This technical scheme proposes to utilize the method for polishing ion beam based on low energy ion sputtering principle to clean optical element surface.The described ion beam polishing based on low energy ion sputtering principle refers to the ion beam bombardment optical element adopting ion gun to launch, the energy transferring of ion is to surface of the work atom, when the energy that surface of the work atom obtains is enough to break away from dissimulated electricity energy, will surface of the work be departed from, thus realize material removal.Described even ion beam sweeping refers to that ion beam is with the finished surface of uniform speed (adopting sweep speed scope preferably to control at 2mm/s ~ 20mm/s) the whole optical element of sweeping, evenly certain depth is removed to make optical element surface, thus guarantee not destroy the high-precision surface shape that Single point diamond turning o or MRF process obtain, do not destroy the surface quality of KDP crystal.
The above-mentioned optical element surface cleaning method based on ion beam polishing, described optical element is specially adapted to KH
2pO
4optical crystal material (KDP crystal).KDP crystal after Single point diamond turning o, then adopt cleaning method of the present invention to process the roughness value that can reduce optical surface, surface roughness is improved.KDP plane of crystal after MRF easily embeds iron powder, then adopts cleaning method of the present invention processing can realize the removal that KDP plane of crystal embeds iron powder.Described KDP plane of crystal needs sputtering to remove certain thickness, and this thickness realizes the ion beam sputtering degree of depth needed for the removal of KDP plane of crystal embedding iron powder.Iron powder in magnetorheological throwing liquid embeds KDP plane of crystal and has certain degree of depth, and the material thickness that ion beam sputtering is removed generally must be greater than the insert depth of iron powder.In addition, method for polishing ion beam of the present invention is adopted to carry out processing the structure that cleaning can not change KDP crystal, namely our test is repeatedly passed through, ion beam polishing of the present invention can not make the chemical composition of KDP crystal and crystal composition structure change, surface does not have novel substance and generates, otherwise the change of crystal structure is by the optical property of the original crystal of impact.
The above-mentioned optical element surface cleaning method based on ion beam polishing, the technological parameter of described method for polishing ion beam is preferably: incident ionic energy is 300eV ~ 500eV, ion beam current 20mA ~ 50mA, and ion beam incident angle is 0 ° ~ 60 °.
Above-mentioned based in the optical element surface cleaning method of ion beam polishing, the removal thickness of described ion beam to optical element surface is relevant with MRF technological parameter, in conjunction with above-mentioned preferred technological parameter, the removal THICKNESS CONTROL of described ion beam to optical element surface is being no more than 200nm.
Compared with prior art, the invention has the advantages that: cleaning method of the present invention is simple, easy, low for equipment requirements, not only effectively can reduce the roughness value of optical surface element surface, and effectively can remove the impurity such as iron powder that optical element surface embeds, ensure the crudy of optical element.
Accompanying drawing explanation
Fig. 1 is the photo of low energy ion beam polishing KDP crystal in the embodiment of the present invention 1.
Fig. 2 is the roughness measurement result of KDP plane of crystal after Single point diamond turning o, before ion beam polishing of exemplar 2 in the embodiment of the present invention 1.
Fig. 3 is that the KDP plane of crystal of exemplar 2 in the embodiment of the present invention 1 is in the roughness measurement result after ion beam polishing.
Fig. 4 is the Raman spectrum analysis result of KDP plane of crystal before and after the polishing of the embodiment of the present invention 1 intermediate ion bundle.
Fig. 5 is the KDP plane of crystal SIMS analysis result of exemplar 3 in the embodiment of the present invention 2.
Fig. 6 is the KDP crystal initial surface SIMS analysis result of exemplar 4 in the embodiment of the present invention 2.
Fig. 7 is the surface second ion mass spectrometry result after the KDP crystal sputtering removal 60nm of exemplar 4 in the embodiment of the present invention 2.
Fig. 8 is the KDP plane of crystal SIMS analysis result of exemplar 5 in the embodiment of the present invention 2.
Fig. 9 be in the embodiment of the present invention 2 relative atomic weight be 56 atom or atomic group secondary ion quantity with the distribution schematic diagram of sputter depth.
Detailed description of the invention
Below in conjunction with Figure of description and concrete preferred embodiment, the invention will be further described, but protection domain not thereby limiting the invention.
embodiment 1:
An optical element surface cleaning method based on ion beam polishing of the present invention, comprises the following steps: first utilize Single point diamond turning o to be 50 × 50 × 10 mm to size
3iI class KDP crystal exemplar 1 and exemplar 2 carry out turnery processing, the main technologic parameters of Single point diamond turning o control be: the speed of mainshaft 500 r/min, the amount of feeding 2 μm/r, cutting depth 1 μm; Again using the exemplar 2 through Single point diamond turning o as processing object (exemplar 1 in contrast), the surface of method for polishing ion beam to this processing object based on low energy ion sputtering principle is adopted to process, in process, control ion beam and even sweeping is carried out to optical element surface, the main technologic parameters of ion beam polishing processing controls: incident ionic energy 400 eV, ion beam current 30 mA, ion beam incident angle 45 ° (adding the image in man-hour as shown in Figure 1); This ion beam at 200nm, completes the cleaning to optical element surface to the removal THICKNESS CONTROL of optical element surface after process finishing.
White light interferometer is adopted to measure exemplar 2 surface roughness, exemplar 2 is distinguished as shown in Figures 2 and 3 in the surface finish measurement result that ion beam polishing is forward and backward, from Fig. 2 and Fig. 3, after Single point diamond turning o, the surface roughness of exemplar 2 is 1.506 nm rms, and after ion beam polishing, the surface roughness of exemplar 2 is 1.258 nm rms.Can find out, after the ion beam polishing processing of the present embodiment, the roughness value of KDP plane of crystal decreases, and surface roughness improves.Utilize the finished surface of Fourier's infrared Raman microspectrograph to exemplar 1 and exemplar 2 carry out spectrum analysis and result compared afterwards, the Raman spectrum analysis Comparative result of exemplar 1 and exemplar 2 as shown in Figure 4.As can be seen from Figure 4, except there is K in the KDP plane of crystal after low-energy ion beams bombardment
2hPO
4in addition, do not have other materials, KDP crystal is not novel substance generation under low-energy ion beams bombardment effect.Therefore, low energy ion beam polishing can not change the surface texture of KDP crystal, and has some improvement to the surface roughness of KDP crystal, may be used for the Ultra-precision Turning of KDP crystal.
embodiment 2:
An optical element surface cleaning method based on ion beam polishing of the present invention, comprises the following steps:
Analyzing exemplar for ease of ion microprobe and contrast, the present embodiment selects three pieces of sizes to be 8 × 8 × 2 mm
3iI class KDP crystal; Wherein, exemplar 3 carries out Single point diamond turning o; Exemplar 4 carries out MRF after Single point diamond turning o; Exemplar 5 carries out ion beam polishing (exemplar 3 and exemplar 4 are in contrast) after Single point diamond turning o and MRF;
Wherein, the process parameter control of each exemplar Single point diamond turning o is: the speed of mainshaft 500 r/min, the amount of feeding 2 μm/r, cutting depth 1 μm;
The main technologic parameters that the MRF of exemplar 4 and exemplar 5 adopts controls: polishing wheel rotating speed 150 r/min, field supply intensity 5 A, magnetorheological night flow 40 L/min, the KDP plane of crystal press-in ribbon degree of depth 0.2 mm;
The ion beam polishing main technologic parameters of exemplar 5 controls: incident ionic energy 400 eV, ion beam current 30 mA, ion beam incident angle 45 °; In process, control ion beam even sweeping is carried out to KDP plane of crystal, this ion beam to the removal THICKNESS CONTROL of KDP plane of crystal at 100 nm.
Subsequently, the finished surface of time of flight secondary ion massspectrometry instrument to above-mentioned exemplar 3, exemplar 4 and exemplar 5 is utilized to carry out surface-element analysis; Ion microprobe analysis condition used is: ion gun is gallium source, and ion beam energy is 25 keV, analyst coverage 10 × 10 μm
2, use charging neutralization, rear accelerating potential is 5 kV.
Figure 5 shows that the ion microprobe analysis result of exemplar 3 finished surface.Abscissa represents relative atomic weight, and ordinate represents the atom or atomic group quantity that sputter.As can be seen from Figure 5, mass spectral analysis ion beam sputtering goes out all polyatoms or atomic group, and such as, what relative atomic weight 54.96 place was corresponding is KO atomic group, and what relative atomic weight 55.97 place was corresponding is KOH atomic group etc.
Figure 6 shows that the ion microprobe analysis result of exemplar 4 finished surface.KDP surface second mass spectrometry results after Single point diamond turning o shown in comparison diagram 5, find to occur new peak value at 55.93 places in KDP plane of crystal mass spectrometry results after MRF, and the element of atomic weight 55.93 correspondence is Fe, after this shows MRF, KDP plane of crystal has iron powder to embed.
Fig. 9 to be relative atomic weight be 56 atom or atomic group relative populations along with the change curve of SIMS analysis sputter depth, wherein sputter depth is obtained by AFM measurement.As can be seen from Figure 9, exemplar 4 Surface testing to relative atomic weight be 56 atom or atomic group relative populations be obviously greater than this atom or atomic group relative populations that exemplar 3 Surface testing arrives.This mainly because exemplar 3 Surface testing to relative atomic weight be 56 atomic group be KOH, and exemplar 4 surface is except comprising KOH, also containing Fe atom.In addition, as seen from Figure 7, when the SIMS analysis sputter depth on exemplar 4 surface reaches 60 nm, the relative atomic weight detected be 56 atom this atom of detecting of atomic group relative populations and exemplar 3 initial surface or atomic group relative populations substantially suitable, the peak value being 55.93 places in relative atomic weight disappears substantially, and this represents now there is not Fe in exemplar 4 Surface testing region.Therefore, can think in the present embodiment that the insert depth of iron powder is about 60 nm.
Figure 8 shows that the ion microprobe analysis result of exemplar 5 finished surface.As can be seen from Figure 8, after 100nm is removed in ion beam polishing, the peak value at relative atomic weight 55.93 place disappears substantially.Meanwhile, the display of the analysis result of Fig. 9, after ion beam polishing, the KDP surface relative atomic weight that ion microprobe detects is that the KDP Surface testing result after the atom of 56 or the relative populations of atomic group and Single point diamond turning o is suitable.This explanation is removed after 100 nm through ion beam polishing, and the iron powder of the embedding on KDP surface is removed substantially.
By utilizing SIMS, analysis contrast is carried out to the KDP surface composition after MRF and ion beam polishing, we can find, the iron powder embedded at KDP plane of crystal because of MRF can be removed well by cleaning method of the present invention.
Claims (3)
1. the optical element surface cleaning method based on ion beam polishing, comprise the following steps: using the optical element after Single point diamond turning o or MRF as processing object, the surface of method for polishing ion beam to this processing object based on low energy ion sputtering principle is adopted to process, in process, control ion beam and even sweeping is carried out to optical element surface, after process finishing, complete the cleaning to optical element surface;
Described optical element is KH
2pO
4optical crystal material;
The technological parameter of described method for polishing ion beam is: incident ionic energy is 300eV ~ 500eV, ion beam current 20mA ~ 50mA, and ion beam incident angle is 0 ° ~ 60 °.
2. the optical element surface cleaning method based on ion beam polishing according to claim 1, is characterized in that, the removal THICKNESS CONTROL of described ion beam to optical element surface is being no more than 200nm.
3. the optical element surface cleaning method based on ion beam polishing according to claim 1, it is characterized in that, sweep speed during described even sweeping controls at 2mm/s ~ 20mm/s.
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| CN103771729B (en) * | 2014-01-22 | 2015-12-02 | 中国人民解放军国防科学技术大学 | A kind of ion-beam machining method reducing stroke |
| CN104084849B (en) * | 2014-06-25 | 2016-06-15 | 中国人民解放军国防科学技术大学 | The magnetic rheological polishing method of deliquescent crystal |
| CN104923463A (en) * | 2015-05-21 | 2015-09-23 | 西安工业大学 | Potassium dihydrogen phosphate (KDP) optical surface planarization method |
| CN105252375A (en) * | 2015-10-14 | 2016-01-20 | 中国人民解放军国防科学技术大学 | Method for increasing laser-damaged threshold through ion beam elastic domain etching |
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| CN106531627A (en) * | 2016-11-25 | 2017-03-22 | 中国科学院长春光学精密机械与物理研究所 | Nd:YAG crystal and surface polishing method thereof |
| CN106835035B (en) * | 2017-04-21 | 2019-01-18 | 西安工业大学 | A kind of method of potassium dihydrogen phosphate crystalloid optical surface planarization |
| CN110136215B (en) * | 2019-05-22 | 2021-11-02 | 中国工程物理研究院机械制造工艺研究所 | Magnetorheological polishing spot extraction method |
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| CN110712094B (en) * | 2019-09-06 | 2021-07-23 | 中国兵器科学研究院宁波分院 | Method for reducing ion beam polishing optical element surface pollution |
| CN112171205B (en) * | 2020-09-28 | 2022-01-11 | 湖南天创精工科技有限公司 | Ion beam assisted aluminum alloy reflector processing method |
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