CN103137415A - Apparatus and method for manufacturing semiconductor devices - Google Patents

Apparatus and method for manufacturing semiconductor devices Download PDF

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Publication number
CN103137415A
CN103137415A CN2012104772261A CN201210477226A CN103137415A CN 103137415 A CN103137415 A CN 103137415A CN 2012104772261 A CN2012104772261 A CN 2012104772261A CN 201210477226 A CN201210477226 A CN 201210477226A CN 103137415 A CN103137415 A CN 103137415A
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processing chamber
quantity delivered
plasma
making method
oxygen
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CN103137415B (en
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申平洙
金秉勳
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PSK Inc
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PSK Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Abstract

The invention provides an apparatus and a method for manufacturing semiconductor devices capable of raising etching selective ratio of a nitride film when etching process is executed. In the apparatus for manufacturing the semiconductor devices provided by the invention, CH2F2, N2 and O2 generate plasma outside of a process cavity. The generated plasma is supplied to the process cavity. According to the apparatus and the method provided by the invention, source gas is without replacing. By adjusting oxygen supply amount and chuck temperature, a relative value of the etching selective ratio can be adjusted to be opposite.

Description

Semiconductor-fabricating device and semiconductor making method
Technical field
The present invention relates to a kind of semiconductor-fabricating device and semiconductor making method, more particularly, relate to and a kind of substrate is carried out etched semiconductor-fabricating device and semiconductor making method.
Background technology
In order to make semiconductor element, need the kinds of processes such as evaporation, photograph, etching, ashing and cleaning.Wherein, etch process is to remove on the semiconductor substrates such as wafer the technique of the film of desired regions, the methods that adopt by the plasma etching film recently in formed film more.In the key element that emphasis is considered in such etch process, 1 is etching selectivity.Etching selectivity has represented other films are not carried out etching and the degree of the etched film of only etching wish.
In film, the etching of silicon nitride film (Silicon Nitride, SiN) is generally according to carrying out to get off.At first, substrate is placed on chuck (chuck) in processing chamber, supply source gas in the processing chamber by these gas, produces plasma in processing chamber.Plasma and film carry out chemical reaction and at the substrate removing films.Source gas as being used for silicon nitride film often uses carbon tetrafluoride (CF 4, tetra fluoro methane), fluoroform (CHF 3, trifluoro methane) and oxygen O 2But, use in the situation of said apparatus structure and above-mentioned gas silicon nitride film, even the pressure in the temperature of chuck or processing chamber and so on process conditions have been carried out various variations, silicon nitride film is also very low with respect to the etching selectivity of silicon oxide film or polysilicon film, is about 30:1 to 50:1 left and right.
In addition, generally during carrying out etch process, silicon nitride film remains unchanged with respect to the etching selectivity of silicon oxide film and the silicon nitride film relative size with respect to the etching selectivity of polysilicon film, can not change significantly.But, along with the carrying out of etch process, in the situation that the Status Change of the film that forms on substrate when carrying out technique with above-mentioned engraving method, can make the etching less efficiently carry out.
The prior art document
Patent documentation
Patent documentation 1: the JP 2004-172584 of Japan communique
Summary of the invention
The object of the invention is to, provide a kind of when substrate is carried out etch process, can improve nitride film with respect to semiconductor-fabricating device and the semiconductor making method of the etching selectivity of other films.
In addition, the object of the invention is to, provide a kind of in the way that etch process carries out, can regulate silicon nitride film with respect to the etching selectivity of silicon oxide film and silicon nitride film semiconductor-fabricating device and the semiconductor making method with respect to the relative size of the etching selectivity of polysilicon film.
The problem that the present invention will solve is not limited to this, and those skilled in the art can clearly understand NM other problems from following record.
The invention provides a kind of semiconductor making method, be used for being etched in the nitride film that forms on substrate.According to an embodiment of the present invention, place substrate on the pedestal that forms in processing chamber, by the 1st source γ-ray emission plasma, above-mentioned plasma is supplied to above-mentioned processing chamber in the outside of above-mentioned processing chamber, above-mentioned the 1st source gas comprises difluoromethane CH 2F 2, nitrogen N 2And oxygen O 2, in the way that technique is carried out, the quantity delivered of the above-mentioned oxygen of change or the temperature of above-mentioned processing chamber.
According to above-mentioned semiconductor making method of the present invention, can make the quantity delivered of above-mentioned oxygen and any increase in above-mentioned processing chamber temperature, and make another remaining minimizing.
According to above-mentioned semiconductor making method of the present invention, the adjustment of above-mentioned processing chamber comprises the adjustment of said base.
According to above-mentioned semiconductor making method of the present invention, the quantity delivered of above-mentioned oxygen changes between the scope of 100 to 2000SCCM scope and 2000 to 2500SCCM, and the temperature of above-mentioned processing chamber changes between the scope of the scope of 40 ℃ to 70 ℃ and 10 ℃ to 40 ℃.
When the temperature of the quantity delivered that changes above-mentioned oxygen or above-mentioned processing chamber, can keep the quantity delivered of above-mentioned difluoromethane constant.
When the temperature of the quantity delivered that changes above-mentioned oxygen or above-mentioned processing chamber, can change the quantity delivered of above-mentioned nitrogen gas.
According to above-mentioned semiconductor making method of the present invention, when above-mentioned technique was carried out, the temperature of said base was 0 to 70 ℃, above-mentioned difluoromethane CH 2F 2The quantity delivered of gas is 10 to 500SCCM, above-mentioned nitrogen N 2The quantity delivered of gas is 100 to 2500SCCM, above-mentioned oxygen O 2The quantity delivered of gas is 100 to 2500SCCM.In addition, the pressure in above-mentioned processing chamber is 300 to 1000mTorr.In addition, when technique was carried out, the electric power of supplying with in order to produce above-mentioned plasma was 1000 to 3000W.
According to above-mentioned semiconductor making method of the present invention, when the temperature of the change quantity delivered of above-mentioned oxygen or above-mentioned processing chamber, the size of above-mentioned electric power is also variable.
In addition, can subtend above-mentioned processing chamber is supplied with the path of above-mentioned plasma and is supplied with the 2nd source gas, and above-mentioned the 2nd source gas comprises Nitrogen trifluoride NF 3When etch process carried out, the quantity delivered of above-mentioned Nitrogen trifluoride was greater than 0 and be below 1000SCCM.
In addition, the invention provides a kind of semiconductor making method, silicon nitride film on the substrate that forms polysilicon film, silicon oxide film and silicon nitride film.According to above-mentioned semiconductor making method, under aforesaid substrate is loaded state on pedestal in processing chamber, by comprising difluoromethane CH 2F 2, nitrogen N 2And oxygen O 2The 1st source γ-ray emission plasma, the above-mentioned silicon nitride film of etching, quantity delivered by changing above-mentioned oxygen or the temperature of above-mentioned processing chamber are regulated above-mentioned silicon nitride film with respect to the etching selectivity of above-mentioned silicon oxide film and the above-mentioned silicon nitride film relative size with respect to the etching selectivity of above-mentioned polysilicon film.
The above-mentioned semiconductor making method according to the present invention after can producing above-mentioned plasma in the outside of above-mentioned processing chamber, supplies to above-mentioned processing chamber with above-mentioned plasma.
The above-mentioned semiconductor making method according to the present invention can make any in the temperature of the quantity delivered of above-mentioned oxygen and above-mentioned processing chamber increase, and make another remaining minimizing.
The above-mentioned semiconductor making method according to the present invention, the adjustment of above-mentioned processing chamber comprises the temperature of regulating said base, the quantity delivered of above-mentioned oxygen changes between the scope of 100 to 2000SCCM scope and 2000 to 2500SCCM, and the temperature of said base changes between the scope of the scope of 40 ℃ to 70 ℃ and 10 ℃ to 40 ℃.
The above-mentioned semiconductor making method according to the present invention when the temperature of the change quantity delivered of above-mentioned oxygen or above-mentioned processing chamber, can change together with the quantity delivered of above-mentioned difluoromethane and above-mentioned nitrogen.In addition, when the temperature of the quantity delivered that changes above-mentioned oxygen or above-mentioned processing chamber, keep the pressure in above-mentioned processing chamber constant.
The above-mentioned semiconductor making method according to the present invention when the temperature of the quantity delivered that changes above-mentioned oxygen or above-mentioned processing chamber, can also change the size of the electric power of supplying with in order to produce plasma.
The above-mentioned semiconductor making method according to the present invention, above-mentioned difluoromethane CH 2F 2Quantity delivered be 10 to 500SCCM, the quantity delivered of above-mentioned nitrogen is 100 to 2500SCCM, the quantity delivered of above-mentioned oxygen is 100 to 2500SCCM.In addition, the temperature of having placed the pedestal of aforesaid substrate is 0 to 70 ℃, and the pressure in above-mentioned processing chamber is 300 to 1000mTorr.
In addition, the invention provides a kind of semiconductor-fabricating device.Above-mentioned semiconductor-fabricating device comprises: the technique unit of carrying out etch process; The plasma feed unit, this plasma feed unit is formed on the outside of above-mentioned technique unit, is used for supplying with plasma to above-mentioned technique unit; And controller, this controller is controlled above-mentioned technique unit and above-mentioned plasma feed unit.Above-mentioned technique unit comprises: processing chamber; The pedestal of supporting substrate, this pedestal is positioned at above-mentioned processing chamber, and has the heating part.Above-mentioned plasma feed unit comprises: inside has the plasma chamber of discharge space, and this plasma chamber is formed on the outside of above-mentioned technique unit; The 1st source gas supply part, the 1st source gas supply part is supplied with the 1st source gas to above-mentioned discharge space; The electric power applying unit provides electric power by this electric power applying unit, so as in above-mentioned discharge space by the 1st source γ-ray emission plasma; And inflow catheter, this inflow catheter has consisted of the path that the plasma that will produce in above-mentioned discharge space supplies to above-mentioned processing chamber.Above-mentioned the 1st source gas comprises difluoromethane CH 2F 2, nitrogen N 2And oxygen O 2Above-mentioned controller makes the quantity delivered of above-mentioned oxygen or the temperature change of above-mentioned processing chamber in the way that technique is carried out.
According to semiconductor-fabricating device of the present invention, above-mentioned plasma chamber is combined with above-mentioned processing chamber on the top of above-mentioned processing chamber, and above-mentioned technique unit also comprises the baffle plate that is positioned at said base top, and this baffle plate is formed with a plurality of through holes at above-below direction.
According to semiconductor-fabricating device of the present invention, above-mentioned plasma feed unit also can comprise the 2nd source gas supply part from the 2nd source gas to path that supply with, this path be the above-mentioned plasma flow that produces in above-mentioned discharge space to the path of above-mentioned processing chamber, above-mentioned the 2nd source gas comprises Nitrogen trifluoride NF 3
The invention effect
According to the embodiment of the present invention, can when substrate is carried out etch process, improve the etching selectivity of nitride film.
In addition, according to the embodiment of the present invention, when utilizing plasma to carry out etch process to substrate, can improve significantly silicon nitride film with respect to the etching selectivity of silicon oxide film or polysilicon film.
In addition, according to the embodiment of the present invention, by carrying out changing process conditions during etch process, can regulate silicon nitride film with respect to the etching selectivity of silicon oxide film and the silicon nitride film relative size with respect to the etching selectivity of polysilicon film.
In addition, according to the embodiment of the present invention, in the situation that use same source gas, can also change the oxygen gas amount used and/or the temperature of processing chamber, make silicon nitride film be adjusted to opposite with respect to the etching selectivity of silicon oxide film and silicon nitride film with respect to the relative size of the etching selectivity of polysilicon film.
Description of drawings
Fig. 1 is the figure that schematically represents the semiconductor-fabricating device of an embodiment of the present invention.
Fig. 2 means that when the device that utilizes Fig. 1 is carried out etch process under the 1st process conditions, silicon nitride film is with respect to the experimental example of the etching selectivity of silicon oxide film and polysilicon film.
Fig. 3 means that when the device that utilizes Fig. 1 is carried out etch process under the 2nd process conditions, silicon nitride film is with respect to the experimental example of the etching selectivity of silicon oxide film and polysilicon film.
Fig. 4 means that when utilizing the device construction different from Fig. 1 to carry out etch process, silicon nitride film is with respect to the experimental example of the etching selectivity of silicon oxide film and polysilicon film.
Fig. 5 is the flow chart of carrying out according to an embodiment of the present invention the method for etch process.
Symbol description in figure
100 processing chambers
200 exhaust units
300 plasma supply parts
310 plasma chambers
320 source gas supply parts
330 electric power applying units
340 inflow catheters
Embodiment
Below, be elaborated with reference to semiconductor-fabricating device and the semiconductor making method of accompanying drawing to an embodiment of the present invention.In explanation of the present invention, for the known formation of association or illustrating in the situation that is judged as possible fuzzy main idea of the present invention of function, description is omitted.
In the present embodiment, substrate is semiconductor wafer.But, being not limited to this, substrate can be also the substrate of other kinds such as glass substrate.
Fig. 1 means the figure of the semiconductor-fabricating device of an embodiment of the present invention.
With reference to Fig. 1, semiconductor-fabricating device 1 utilizes plasma to come film on etching substrates W.Form a plurality of films that comprise polysilicon film, silicon oxide film and silicon nitride film in substrate, wanting etched film is nitride film.As an example, nitride film is silicon nitride film (Silicon nitride).
Semiconductor-fabricating device 1 has technique unit (processing unit, 100), exhaust unit (exhausting unit, 200), plasma feed unit (plasma supplying unit, 300) and controller (not shown).Technique unit 100 provides the space that is used for the placement substrate and carries out etch process.The product that produces in the process gas that exhaust unit 200 is inner residual with processing chamber 100 and processing substrate process etc. is discharged to the outside, and the pressure in processing chamber 100 is maintained setting pressure.Plasma feed unit 300 generates plasma (plasma) in the outside of technique unit 100 according to process gas, and this plasma is supplied with technique unit 100.Controller is controlled technique unit 100 and plasma feed unit 300.
Technique unit 100 has processing chamber 110, base plate supports section 120 and baffle plate 130.The inside of processing chamber 110 has formed the processing space 111 of carrying out processing substrate technique.The top wall of processing chamber 110 is opened, and also can form opening (not shown) at sidewall.Substrate passes through opening, the inside of the processing chamber 110 of coming in and going out.Opening is opened and closed by switching parts such as doors (not shown).Bottom surface at processing chamber 110 forms steam vent 112.Steam vent 112 is linked to exhaust unit 200, provides gas and the product that processing chamber 110 is inner residual to be discharged to outside path.
The 120 supporting substrate W of base plate supports section.Base plate supports section 120 comprises pedestal 121 and back shaft 122.Pedestal 121 is positioned at processes space 111, forms circular plate shape.Pedestal 121 is supported by back shaft 122.Substrate W be arranged on pedestal 121 above.Be formed with electrode (not shown) in the inside of pedestal 121.Electrode is linked to external power source, produces static according to the electric power that applies.The static that produces is fixed on pedestal 121 substrate W.Be formed with heater block 125 in the inside of pedestal 121.As an example, heater block 125 can be heater coil.In addition, be formed with cooling-part 126 in the inside of pedestal 121.Cooling-part 126 is made of the cooling pipeline that flows through cooling water.Heater block 125 is heated to substrate W the temperature of having set.Cooling-part 126 makes substrate W cooling forcibly.
In addition, be formed with chamber wall heater 118 in the outside of processing chamber 110.Chamber wall heater 118 forms coil shape.Optionally form chamber wall heater 118 in the outer wall of processing chamber 110.Baffle plate 130 is positioned at the top of pedestal 121.Baffle plate 130 forms through hole 131.Through hole 131 for above baffle plate 130 to below the Consistent through hole that forms, be formed uniformly in each zone of baffle plate 130.
Refer again to Fig. 1, plasma feed unit 300 is positioned at the top of processing chamber 110.Plasma feed unit 300 improves makes the source gas discharge, and generates plasma, and the plasma that generates is supplied with to processing space 111.Plasma feed unit 300 comprises plasma chamber 310, the 1st source gas supply part 320, the 2nd source gas supply part 322, electric power applying unit 330 and inflow catheter 340.
Plasma chamber 310 is positioned at the outside of processing chamber 110.As an example, plasma chamber 310 is positioned at the top of processing chamber 110, with processing chamber 110 combinations.On forming, the inside of plasma chamber 310 reaches the discharge space 311 of open underneath.The upper end of plasma chamber 310 is airtight by gas supply side 315.Gas supply side 315 is linked to the 1st source gas supply part 320.The 1st source gas supplies to discharge space 311 by gas supply side 315.The 1st source gas comprises difluoromethane (CH 2F 2, Difluoromethane), nitrogen N 2And oxygen O 2Optionally, the 1st source gas also can comprise carbon tetrafluoride (CF 4, Tetrafluoromethane) etc. the gas of other kinds.
Electric power applying unit 330 applies High frequency power to discharge space 311.Electric power applying unit 330 comprises antenna 331 and power supply 332.
Antenna 331 is induction coupled mode plasma (ICP) antennas, forms coil shape.Antenna 331 is wound around multi-turn in the outside of plasma chamber 310 on plasma chamber 310.Antenna 331 is wrapped on plasma chamber 310 in the zone corresponding to discharge space 311.One end of antenna 331 is linked to power supply 332, other end ground connection.
Power supply 332 is to antenna 331 supply high frequency electric currents.The High frequency power of supplying with antenna 331 is applied to discharge space 311.High-frequency current forms induction field in discharge space 311, the 1st source gas in discharge space 311 obtains the required energy of ionization from induction field, is transformed to plasmoid.
The structure of electric power applying unit 330 is not limited to above-mentioned example, can use the multiple structure by the 1st source γ-ray emission plasma.
Inflow catheter 340 is between plasma chamber 310 and processing chamber 110.Top sealing, lower end and baffle plate 130 combinations that inflow catheter 340 is open with processing chamber 110.The inside of inflow catheter 340 forms inflow space 341.Inflow space 341 couples together discharge space 311 with processing space 111, formed the plasma that discharge space 311 is generated and supplied to the path of processing space 111.
Inflow space 341 can comprise inflow entrance 341a and diffusion space 341b.Inflow entrance 341a is positioned at the bottom of discharge space 311, links with discharge space 311.The plasma that discharge space 311 generates flows into by inflow entrance 341a.Diffusion space 341b is positioned at the bottom of inflow entrance 341a, links inflow entrance 341a and processes space 111.Diffusion space 341b is more downward, and sectional area broadens more gradually.Diffusion space 341b has down funnel shaped.The plasma of being supplied with by inflow entrance 341a is diffused during by diffusion space 341b.
Can link on the path of the plasma supply processing chamber 110 that discharge space 311 is produced the 2nd source gas supply part 322 is arranged.For example, the 2nd 322 pairs of source gas supply parts path is supplied with the 2nd source gas, and this path is in the position of the lower end that has formed antenna 331 and formed the path that flows through plasma between the position of upper end of diffusion space 341b.As an example, the 2nd source gas comprises Nitrogen trifluoride NF 3(Nitrogen trifluoride).Optionally do not supply with the 2nd source gas yet and only carry out etch process by the 1st source gas.
The method of the semiconductor-fabricating device etching substrates W that utilizes Fig. 1 then, is described.The semiconductor-fabricating device 1 of Fig. 1 is that 100 outside produces plasma in the PROCESS FOR TREATMENT unit, utilizes downstream (downstream) mode this plasma to be supplied to remote plasma body device a kind of of processing chamber 110.According to present embodiment, use difluoromethane CH in the gas of source 2F 2, Nitrogen trifluoride NF 3, nitrogen N 2And oxygen O 2With difluoromethane CH 2F 2, nitrogen N 2And oxygen O 2Directly supply with discharge space 311, with Nitrogen trifluoride NF 3Supply to the path that supplies to processing chamber 110 for the plasma that discharge space 311 is produced.Replenish a bit, also can use carbon tetrafluoride CF in the 1st source gas 4
During etch process carries out, the following process conditions that provide.At this moment, silicon nitride film with respect to the selection of silicon oxide film than realizing with about 100:1 to 3000:1, silicon nitride film with respect to the selection of polysilicon film than realizing with the about high selectivity of 100:1 to 1000:1.
(process conditions)
Base-plate temp: 0 to 70 ℃
Difluoromethane CH 2F 2The quantity delivered of gas: 10 to 500SCCM
Nitrogen trifluoride NF 3The quantity delivered of gas: 0 to 1000SCCM
Nitrogen N 2The quantity delivered of gas: 100 to 2500SCCM
Oxygen O 2The quantity delivered of gas: 100 to 2500SCCM
Electric power: 1000～3000W
Pressure in processing chamber: 300 to 1000mTorr
When etch process is carried out, with use carbon tetrafluoride CF 4Or fluoroform CHF 3Gas is compared as the situation of source gas, uses difluoromethane CH together 2F 2With nitrogen N 2And oxygen O 2Situation under, by carrying out simultaneously difluoromethane CH 2F 2At the upper C that forms of polysilicon film (poly silicon) and silicon oxide film (siliconoxide) xH yThe mechanism of polymer film, with utilize oxygen O 2With nitrogen N 2Remove the mechanism of above-mentioned polymer film, the etching selectivity that can make silicon nitride film drink silicon oxide film with respect to polysilicon film increases significantly.
In addition, although do not change the kind of source gas in process conditions in the way that etch process carries out, also can change silicon nitride film with respect to the etching selectivity of silicon oxide film and the silicon nitride film relative size with respect to the etching selectivity of polysilicon film.
Under the 1st process conditions, silicon nitride film is higher with respect to the etching selectivity of polysilicon film than silicon nitride film with respect to the etching selectivity of silicon oxide film below for etching selectivity.
(the 1st process conditions)
Base-plate temp: 0 to 40 ℃
Difluoromethane CH 2F 2The quantity delivered of gas: 10 to 500SCCM
Nitrogen trifluoride NF 3The quantity delivered of gas: 0 to 1000SCCM
Nitrogen N 2The quantity delivered of gas: 100 to 2500SCCM
Oxygen O 2The quantity delivered of gas: 2000 to 2500SCCM
Electric power: 1000～3000W
Pressure in processing chamber: 300 to 1000mTorr
In addition, under the 2nd process conditions, silicon nitride film is higher with respect to the etching selectivity of silicon oxide film than silicon nitride film with respect to the etching selectivity of polysilicon film below.
(the 2nd process conditions)
Base-plate temp: 40 to 70 ℃
Difluoromethane CH 2F 2The quantity delivered of gas: 10 to 500SCCM
Nitrogen trifluoride NF 3The quantity delivered of gas: 0 to 1000SCCM
Nitrogen N 2The quantity delivered of gas: 100 to 2500SCCM
Oxygen O 2The quantity delivered of gas: 100 to 2000SCCM
Electric power: 1000～3000W
Pressure in processing chamber: 300 to 1000mTorr
Fig. 2 is illustrated in when carrying out etch process under the interior scope of the 1st process conditions, and silicon nitride film is with respect to the etching selectivity of polysilicon film and silicon oxide film.When Fig. 3 was illustrated in the interior execution of the scope etch process of the 2nd process conditions, silicon nitride film was with respect to the etching selectivity of polysilicon film and silicon oxide film.With reference to Fig. 2 and Fig. 3, as can be known under the process conditions of Fig. 2, silicon nitride film with respect to the etching selectivity (180:1) of silicon oxide film than etching selectivity (90:1) height of silicon nitride film with respect to polysilicon film, under the process conditions of Fig. 3, in contrast, silicon nitride film with respect to the etching selectivity (170:1) of polysilicon film than silicon nitride film with respect to the etching selectivity (90:1) of silicon oxide film than high.
According to the embodiment of the present invention, do not change the kind of source gas, quantity delivered by regulating oxygen gas or the temperature in processing chamber just can be regulated silicon nitride film with respect to the etching selectivity of silicon oxide film and the silicon nitride film relative size with respect to the etching selectivity of polysilicon film.The adjustment of processing chamber is undertaken by the temperature of change pedestal.Therefore, when carrying out etch process after the interior supply source gas to processing chamber 110, in the situations such as state of the silicon nitride film, silicon oxide film and the polysilicon film that form on change substrate W, also can not change the kind of source gas, carry out technique with respect to etching selectivity and the silicon nitride film of silicon oxide film with respect to the relative size of the etching selectivity of polysilicon film by regulating silicon nitride film.
Fig. 4 means and use difluoromethane CH in the processing chamber internal direct different from the device construction of Fig. 1 is practiced midwifery the constructing apparatus of living plasma 2F 2, oxygen O 2, nitrogen N 2And argon Ar gas is when carrying out etch process as source gas, and silicon nitride film is with respect to the experimental example of the etching selectivity of silicon oxide film and polysilicon film.
According to experimental example shown in Figure 4, the pressure in the temperature that pedestal is provided as shown in Figure 4, processing chamber, difluoromethane CH as can be known 2F 2, argon Ar, oxygen O 2And nitrogen N 2Quantity delivered when also having electric power, silicon nitride film is about 36:1 with respect to the etching selectivity of silicon oxide film, silicon nitride film is about 48:1 with respect to the etching selectivity of polysilicon film, compares when carrying out etch process with the device construction of using Fig. 1, and etching selectivity is relatively very low.
Fig. 5 means that the device 1 that utilizes Fig. 1 comes the flow chart of the method for silicon nitride film.Following engraving method is controlled the flow of source gas, the temperature of pedestal 120, the pressure in processing chamber 110, the size of electric power etc. by controller and is carried out.
With reference to Fig. 5, at first load substrate W (step S10) on pedestal 120.When the initial stage is carried out etch process, according to the 1st process conditions, carry out technique (step S20) according to the mode that silicon nitride film is higher with respect to the etching selectivity of polysilicon film than silicon nitride film with respect to the etching selectivity of silicon oxide film.Afterwards, if through certain hour, under the state in substrate W is maintained pedestal 120, change to the 2nd process conditions (step S30).Afterwards, carry out technique (step S40) according to the silicon nitride film mode higher with respect to the etching selectivity of silicon oxide film than silicon nitride film with respect to the etching selectivity of polysilicon film under the 2nd process conditions.When changing to the 2nd process conditions from the 1st process conditions, the quantity delivered of oxygen gas, the temperature of pedestal 120 or the quantity delivered of oxygen gas and the temperature of pedestal 120 are all changed, and the pressure in the quantity delivered of difluoromethane, Nitrogen trifluoride, nitrogen gas and processing chamber 110 remains unchanged.The electric power of supplying with in order to produce plasma can be kept certain or change.If technique is completed, unload carried base board W (step S50) from pedestal 120.
But, different therewith, the pressure in the quantity delivered of difluoromethane, Nitrogen trifluoride, nitrogen gas and processing chamber 110 also can change in respect to the etching selectivity of polysilicon film and the scope of silicon nitride film with respect to the change of the relative size of the etching selectivity of silicon oxide film not affecting silicon nitride film.
In addition, also can optionally at the initial stage of carrying out etch process, carry out technique according to the 2nd process conditions, if through certain hour, change to the 1st process conditions and carry out technique.
Have again, also can be optionally, the limit is applicable the 1st process conditions and the 2nd process conditions alternately, and etch process is carried out on the limit.
In above-mentioned example, illustrated when changing to the 2nd process conditions from the 1st process conditions, the temperature (adjusting) in processing chamber 110 is carried out after the temperature of adjusting base 121.But be not limited to this, the adjustment in processing chamber 110 also can be undertaken by the temperature of regulating chamber wall heater 118, or regulates whole chambeies wall heater 118 and carry out with the temperature of pedestal 121.
In addition, in above-mentioned example, constant being illustrated of quantity delivered of nitrogen gas under the 1st process conditions and the 2nd process conditions.But when process conditions change to the 2nd process conditions from the 1st process conditions, the quantity delivered of nitrogen gas is changed.The quantity delivered of nitrogen gas can be regulated the etch quantity of nitride film.For example, the quantity delivered of nitrogen is increased, reduce the etch quantity of nitride film.Therefore, can utilize under the 1st process conditions and the 2nd process conditions the quantity delivered of nitrogen gas change to regulate silicon nitride film with respect to the etching selectivity of polysilicon film and silicon nitride film with respect to the etching selectivity of silicon oxide film, regulate its relative size.
Above explanation has only illustrated to example technological thought of the present invention, so long as the personnel that have in the technical field of the invention common knowledge, all can carry out multiple correction and distortion in the scope that does not break away from intrinsic propesties of the present invention.Therefore, execution mode disclosed by the invention is not to limit technological thought of the present invention, and is only for explanation, and this execution mode does not limit the scope of technological thought of the present invention.Protection scope of the present invention must be made an explanation by following claim, must be interpreted as with the equal scope of claim in whole technological thoughts all be included in interest field of the present invention.

Claims (23)

1. a semiconductor making method, be used for being etched in the nitride film that forms on substrate, wherein,
Place substrate on formed pedestal in processing chamber, by the 1st source γ-ray emission plasma, described plasma supplied to described processing chamber in the outside of described processing chamber,
Described the 1st source gas comprises difluoromethane CH 2F 2, nitrogen N 2And oxygen O 2,
In the way that technique is carried out, the quantity delivered of the described oxygen of change or the temperature of described processing chamber.
2. semiconductor making method according to claim 1 is characterized in that:
Make any increase in the temperature of the quantity delivered of described oxygen and described processing chamber, make another minimizing.
3. semiconductor making method according to claim 1 and 2 is characterized in that:
The adjustment of described processing chamber comprises the adjustment of described pedestal.
4. semiconductor making method according to claim 1 and 2 is characterized in that:
The quantity delivered of described oxygen changes between the scope of 100 to 2000SCCM scope and 2000 to 2500SCCM, and the temperature of described pedestal changes between the scope of the scope of 40 ℃ to 70 ℃ and 10 ℃ to 40 ℃.
5. semiconductor making method according to claim 1 is characterized in that:
When the temperature of the quantity delivered that changes described oxygen or described processing chamber, keep described difluoromethane quantity delivered constant.
6. semiconductor making method according to claim 1 is characterized in that:
When the temperature of the quantity delivered that changes described oxygen or described processing chamber, the quantity delivered of the described nitrogen gas of change.
7. semiconductor making method according to claim 1 is characterized in that:
The adjusting of described processing chamber temperature comprises the adjusting of described base-plate temp,
When described technique was carried out, the temperature of described pedestal was 0 to 70 ℃, described difluoromethane CH 2F 2The quantity delivered of gas is 10 to 500SCCM, described nitrogen N 2The quantity delivered of gas is 100 to 2500SCCM, described oxygen O 2The quantity delivered of gas is 100 to 2500SCCM.
8. semiconductor making method according to claim 7 is characterized in that:
Pressure in described processing chamber is 300 to 1000mTorr, and the electric power of supplying with in order to produce described plasma is 1000 to 3000W.
9. semiconductor making method according to claim 7 is characterized in that:
The described processing chamber of subtend is supplied with the path of described plasma and is supplied with the 2nd source gas,
Described the 2nd source gas comprises Nitrogen trifluoride NF 3
10. semiconductor making method according to claim 9 is characterized in that:
When etch process carried out, the quantity delivered of described Nitrogen trifluoride was greater than 0 and be below 1000SCCM.
11. a semiconductor making method, on the substrate that forms polysilicon film, silicon oxide film and silicon nitride film, silicon nitride film, wherein,
Loaded on pedestal in processing chamber under the state of described substrate, by including difluoromethane CH 2F 2, nitrogen N 2And oxygen O 2The 1st source γ-ray emission plasma, the described silicon nitride film of etching,
Quantity delivered by changing described oxygen or the temperature of described processing chamber are regulated described silicon nitride film with respect to the etching selectivity of described silicon oxide film and the described silicon nitride film relative size with respect to the etching selectivity of described polysilicon film.
12. semiconductor making method according to claim 11 is characterized in that:
After the outside of described processing chamber produces described plasma, supply to described processing chamber.
13. semiconductor making method according to claim 12 is characterized in that:
Any increase according in the temperature of the quantity delivered that makes described oxygen and described processing chamber is changed the mode of another remaining minimizing.
14. semiconductor making method according to claim 11 is characterized in that:
The temperature change of described processing chamber comprises the temperature change of described pedestal,
The quantity delivered of described oxygen changes between the scope of 100 to 2000SCCM scope and 2000 to 2500SCCM, and the temperature of described pedestal changes between the scope of the scope of 40 ℃ to 70 ℃ and 10 ℃ to 40 ℃.
15. semiconductor making method according to claim 12 is characterized in that:
When the temperature of the quantity delivered that changes described oxygen or described processing chamber, keep the quantity delivered of described difluoromethane and the pressure in described processing chamber constant.
16. semiconductor making method according to claim 12 is characterized in that:
When the temperature of the quantity delivered that changes described oxygen or described processing chamber, the quantity delivered of the described nitrogen of change.
17. the described semiconductor making method of any one according to claim 9 to 16 is characterized in that:
Described difluoromethane CH 2F 2Quantity delivered be 10 to 500SCCM, the quantity delivered of described nitrogen is 100 to 2500SCCM, the quantity delivered of described oxygen is 100 to 2500SCCM.
18. semiconductor making method according to claim 17 is characterized in that:
The temperature that has loaded the pedestal of described substrate is 0 to 70 ℃, and the pressure in described processing chamber is 300 to 1000mTorr.
19. a semiconductor-fabricating device comprises:
Carry out the technique unit of etch process;
Supply with the plasma feed unit of plasma to described technique unit, this plasma feed unit is formed on the outside of described technique unit; With
Controller, this controller is controlled described technique unit and described plasma feed unit,
Described technique unit comprises: processing chamber; With
Pedestal with heater block, this pedestal is positioned at described processing chamber, supporting substrate,
Described plasma feed unit comprises:
At the plasma chamber that the outside of described technique unit forms, the inside of this plasma chamber has discharge space;
The 1st source gas supply part, the 1st source gas supply part is supplied with the 1st source gas to described discharge space;
The electric power applying unit provides electric power by this electric power applying unit, with in described discharge space by the 1st source γ-ray emission plasma; With
Inflow catheter, the path that this inflow catheter provides the plasma that will produce in described discharge space to supply to described processing chamber,
Described the 1st source gas comprises difluoromethane CH 2F 2, nitrogen N 2And oxygen O 2,
Described controller makes the quantity delivered of described oxygen or the temperature change of described pedestal in the way that technique is carried out.
20. semiconductor-fabricating device according to claim 19 is characterized in that:
Described plasma chamber is combined with described processing chamber on the top of described processing chamber,
Described technique unit comprises the baffle plate on the top that is positioned at described pedestal, and this baffle plate is formed with a plurality of through holes at above-below direction.
21. semiconductor-fabricating device according to claim 20 is characterized in that:
Described plasma feed unit also comprises the 2nd source gas supply part from the 2nd source gas to path that supply with, and this path is the path that the described plasma that produces in described discharge space flows to described processing chamber,
Described the 2nd source gas comprises Nitrogen trifluoride NF 3
22. a semiconductor making method, it utilizes, and in claim 19 to 21, the described semiconductor-fabricating device of any one comes the etching nitride film, wherein comprises:
Supply with the step of described the 1st source gas to described discharge space;
In the step of described discharge space by described the 1st source γ-ray emission plasma;
The described plasma that produces in described discharge space is supplied with the step of described processing chamber; With
With the step of the nitride film on the described substrate of described plasma etching,
The quantity delivered of the described oxygen of change or the temperature of described processing chamber in the way that etch process carries out.
23. semiconductor making method according to claim 22 is characterized in that:
The temperature change of described processing chamber comprises the temperature change of described pedestal,
During described etch process carries out, described difluoromethane CH 2F 2Quantity delivered be 10 to 500SCCM, the quantity delivered of described nitrogen is 100 to 2500SCCM, and the quantity delivered of described oxygen is 100 to 2500SCCM, and the temperature of described pedestal is 0 to 70 ℃, pressure in described processing chamber is 300 to 1000mTorr, and described electric power is 1000 to 3000W.
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