CN103155146A - 用于制造芯片堆的方法以及用于执行该方法的载体 - Google Patents

用于制造芯片堆的方法以及用于执行该方法的载体 Download PDF

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CN103155146A
CN103155146A CN201080066893XA CN201080066893A CN103155146A CN 103155146 A CN103155146 A CN 103155146A CN 201080066893X A CN201080066893X A CN 201080066893XA CN 201080066893 A CN201080066893 A CN 201080066893A CN 103155146 A CN103155146 A CN 103155146A
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carrier
chip
basic layer
chip stack
layer
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CN103155146B (zh
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M.温普林格
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EV Group E Thallner GmbH
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EV Group E Thallner GmbH
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Abstract

本发明涉及一种用于制造芯片堆（31）的方法，具有以下方法流程：在载体（10）的载体侧（15）上施加尤其是介电的和/或可感光结构化的基本层（20），所述载体在其载体侧（15）上配备有起粘附作用的粘附区域（14）以及起较小粘附作用的支撑区域（11），其中基本层（20）最大程度全平面地至少施加在支撑区域（11）上，在基本层（20）上建造芯片堆（31），浇注芯片堆（31），将载体（10）从基本层（20）松脱开。此外本发明涉及一种用于执行该方法的载体。

Description

用于制造芯片堆的方法以及用于执行该方法的载体
技术领域                  
本发明涉及一种根据权利要求1或13的用于制造芯片堆的方法，以及一种根据权利要求14的载体。
背景技术
不断发展的对位于半导体芯片上的结构的小型化以及由于在大批量制造半导体芯片的情况下存在的成本压力，需要新型的方法和体系架构来将带有越变越小的结构的半导体芯片与印刷电路板上的对应结构或与相邻芯片连接。在此方面，尤其是芯片上的结构和连接线路与印刷电路板上的常见结构相比的大差异成为一个技术问题。虽然还对印刷电路板的结构进一步进行小型化和细化，以能够赶上芯片制造的发展。但是由于存在的成本压力，需要使用更为有利的、具有与芯片结构相比不太精细的结构化接触结构的印刷电路板。因为在印刷电路板上施加不同的芯片、尤其是具有不同小型化程度的芯片，使得在制造印刷电路板时由于接触结构的进一步小型化而不再可能进行经济的制造。具有高连接密度的芯片可能会确定印刷电路板材料的选择以及印刷电路板的制造方法的选择。
另一个技术问题在于，常规结构形式的印刷电路板具有热膨胀，这种热膨胀与诸如硅、锗的半导体材料的热膨胀极为不同。因此，为了防止印刷电路板与半导体材料之间的热膨胀差异导致疲劳断裂，在很多情况下还要遵循芯片与印刷电路板之间的连接结构的特定最小尺寸（更多地借助所谓的突起来实现，所述突起至少由共晶的金属合金构成）。此外，为了使芯片堆中的或印刷电路板上的芯片稳定，通常必须将填充材料放置到堆中，这在对连接结构进行进一步小型化时导致问题。
尤其是基于上述技术问题，通过所谓的成扇形展开接触结构（Fan-Out-Kontaktierungsstruktur）来制造芯片。在此方面，半导体芯片或芯片堆被注入填充材料中，该填充材料用于增大芯片的基本面积并由此必须为连接提供更多空间。在此方面，在半导体芯片上的非常紧密包装的连接端在由半导体芯片和填充材料组成的更大的面上展开（成扇形展开）。于是展开的结构可以经由突起与印刷电路板连接。
目前用于制造具有成扇形展开接触结构的芯片的方法基于在载体上施加粘合剂，芯片被放置在所述粘合剂上。作为粘合剂例如使用被层压在载体上的粘合膜。利用选取和放置工具（Pick-and-Place-Tool）将芯片施加在粘合膜上，并且接着用层材料（模塑料（Molding Compound））浇注芯片。在将这样由芯片和层材料（模塑料）形成的混合晶片剥离之后，在正面上制造成扇形展开接触结构。
在迄今已知的方法中，技术问题尤其是引发混合晶片从载体的松脱，尤其是因为上述可松脱的粘合连接。主要应用临时的连接，并且粘合连接通常与用于浇注的材料起反应。因此在目前的方法中，尤其要注意粘合剂在化学以及机械上并且尤其是在所使用的处理温度方面与用于浇注芯片的材料兼容。
基于所使用的载体材料——这些载体材料通常从金属、陶瓷或半导体材料构成的组中选择，UV可松脱的粘合剂或借助通过光源（例如激光器）的照射而松脱的粘合剂落料（ausschneiden），因为这些载体对于使粘合剂松脱所需要的波长来说通常不是透明的。
但是技术问题还引发了可热松脱的粘合剂，例如双侧粘合剂带或者具有热塑性特性的可热松脱的粘合剂。这些粘合剂大多不具有所需要的、在已知的粘合剂情况下大多达到150℃或最大200℃的温度稳定性。此外，这些粘合剂在温度升高时对机械变形的抵抗力较小，由此芯片在浇注期间可能滑动并且在最坏的情况下不再与对应的接触连接端接触。所述浇注通常在温度介于150℃和200℃之间时进行。
另一个问题在于，一些用于浇注的材料只能有条件地与可用的临时粘合剂兼容，因为这些临时粘合剂与用于浇注的材料相互作用。因此到目前为止需要限定每一种被规定使用的浇注材料与所使用的粘合剂的相互作用。由此在实践中强烈限制了可使用的材料的集合，从而对在制造芯片时的要求的反应灵活性较小。
另一个问题在制造堆叠成多个应当分别相互导电连接的芯片层的芯片堆时存在。也称为3D封装的芯片堆具有允许芯片的直接堆叠和电连接的通孔接触（Through Silicon Via，TSV）。对这些在实践中大多是金属焊接连接或扩散接合连接的电连接的制造，一般需要超过200℃的温度，部分地甚至达到300℃。在这样的温度时，目前已知的所有粘合剂都会失效。
另一个技术问题是已知的大多数粘合剂对于可见光缺乏透明度，因为尤其是在借助选取和放置设备放置芯片时仅在粘合剂相应透明的情况下才可以实现精确的调整。因此调整精度在一些粘合剂的情况下遭到削弱，从而在特殊情况下采取所谓的总体对比（Global Alignment），其中芯片借助于外部（不属于晶片的）参考系统放置在预定义的光栅中。大多数情况下，该参考系统通过级（接收装置）以及选取和放置系统的属于级的传感机构形成。这产生如下缺点：整个系统的可能的热膨胀直接影响调整精度，使得选取和放置系统的构造必须相应地鲁棒和稳定，以消除这种影响和导致调整精度漂移的倾向。由此用于调整的成本被显著提高。
只要在将混合晶片从载体剥离时应当使用热处理或热机械处理，就会存在用于模塑料材料的温度在此也临界到不可忍受的问题。这些材料在加热时失去机械稳定性，这至少会增大在加热状态下从载体剥离的难度。在此方面，各个芯片在光栅中的调整精度也可能受到影响，但是该调整精度是成功进行混合晶片的其它处理的前提。例如，非常紧密包装的连接垫接着在各个芯片上与在薄层技术中借助平版印刷方法定义的接触部接触。在此需要极精细的结构尺寸的接触部是不稳定的，并且因此是最关键的，因为直接设置在芯片上的接触部具有与其它层相比最精细的分辨率和最大的密度，而芯片在横向（X-Y平面）调整精度方面具有非常大的变化。其它连接层与高分辨率的第一层相比在各个结构的横向位置精度方面需要比芯片小得多的横向位置精度（是芯片的五分之一至二分之一）。
因此总结出下面的问题：
-所使用的粘合剂的化学稳定性
-所使用的粘合剂的热稳定性
-所使用的粘合剂的热机械稳定性
-所使用的粘合剂缺乏透明度（调整精度）
-芯片的调整精度（模糊）
-在剥离处理时的温度。
发明内容
因此本发明所基于的任务是说明一种用于制造具有成扇形展开接触结构的芯片堆的方法，利用该方法用于建造混合晶片的材料和接着的处理不再存在涉及载体的热稳定性、热机械稳定性和/或化学稳定性的上述限制。另一个任务在于提高在放置和建造芯片时的调整精度，并且尽可能同时降低制造时的成本。
该任务利用权利要求1的特征解决。本发明的有利扩展在从属权利要求中说明。在本发明的范围中还包括在说明书、权利要求和/或附图中说明的特征中至少两个特征的全部组合。在所说明的值范围中，还应当公开位于所述界限内的值作为极限值并且可以任意组合要求保护。
本发明所基于的思想是，由至少一个芯片层次组成的芯片堆不再直接粘合到载体上，而是首先在载体上施加尤其是介电的或绝缘的和/或可光刻的基本层，又在该基本层上建立芯片堆。有利的是，根据本发明尤其可以考虑，基本层至少部分地是芯片堆或待产生的混合晶片的组成部分。尤其是可以至少最大程度地放弃昂贵的临时粘合剂。
根据本发明，利用减小的附着力将基本层至少大部分施加在载体上的支撑区域上，其中该支撑区域包括待产生的混合晶片的大部分平面或载体的大部分平面。根据本发明，在此可以考虑仅在待产生的混合晶片的最外面的边缘或待产生的芯片堆的最外面的边缘上设置具有在载体上的高附着力/粘附力的粘附区域。换句话说：几乎仅在基本层的周边上，载体支撑基本层和待建造在基本层上的芯片堆，该芯片堆由至少一个芯片层次构成，其中基本层与载体之间的接触平面是平坦的。
粘附区域对基本层的粘附力根据本发明每面积是支撑区域的粘附力的尤其是至少三倍，优选至少五倍，更优选至少十倍，理想地至少二十倍。
作为本发明含义下的载体，可以使用适用于制造混合晶片或单个芯片堆的材料，其中特别优选的材料是从金属、陶瓷或半导体、以及石英、玻璃等的组之一中选择的材料。还可以考虑制造由这些材料的组合组成的载体。载体可以具有任意形状，但是有利的是方形的、矩形的或者尤其是圆形的。特别有利的是圆形衬底形式的载体的实施方式，该圆形衬底具有与标准硅晶片类似或相同的尺寸，因为在这种情况下可以使用已建立的、可用的制造机器和基础设施。
本发明的核心因此在于将基本层施加在载体上，该基本层与用于浇注芯片堆的材料相比在化学方面以及在热方面和在热机械方面都具有更好的特性，尤其是在与通过固定在基本层边缘上而明显简化的、载体与基本层的剥离相结合的情况下。柔韧性以及可实现的调整精度都由于未被层材料（模塑料）浇注的基本层而被明显改善。此外，通过放弃昂贵的材料组合，尤其是在临时粘合剂方面的材料组合而改善了制造成本。最后并且不止于此，通过本发明才实现了将多个芯片层次处理成具有将芯片/芯片堆电连接的导体线路、尤其是成扇形展开接触结构的芯片堆。
在另一种独立的本发明的设计中规定，基本层可通过例如热模压或UV模压方法（基于可通过借助紫外光的照射而络合的材料）的模压方法被结构化，尤其是由塑料构成，以用于产生由至少一个塑料芯片构成的芯片堆。在此可以考虑根据本发明完全放弃硅。该实施方式尤其是对微流体的应用，也就是微流体芯片的制造是有利的，并且令人难忘地展示出本发明方法的多面性。于是建造芯片堆的方法步骤在该变型的一般化的实施方式中仅仅在于，尤其是通过例如热模压或UV模压方法的模压方法对基本层结构化，并且必要时进行金属化和/或借助随后的接合方法对所述结构进行封装。
这种模压方法还可以用于特别成本有利地制造通过模塑料（所谓的通模孔或简称TMV）达到的电连接。在此方面，按照以下方式来执行芯片的浇注，即浇注工具具有期望的结构，例如用于在模塑料中制造通孔的结构。在浇注过程期间，浇注工具被按压到流动的模塑料团块中，并且进入该工具中的负结构将该模塑料挤压到规定的位置上。在模塑料材料硬化之后，期望的正结构残留在硬化的模塑料材料中。通过这种方式例如可以制造通孔，在制造处理流中的给定时间之后可以利用工业常见的方法、尤其是例如金属的电化学分离来填充所述通孔。这对于例如应当将两个通过这种方式制造的芯片堆又堆叠起来并且相互电连接的应用情况是特别有用的。通过上述方式制造的TMV接触使得可以将两个芯片堆简单和节省空间地导电连接。
根据本发明的一种有利实施方式规定，在载体侧上的粘附区域中、尤其是在相对于该载体侧下凹的片段上优选齐平填充到载体侧地设置可选择性溶解的填充材料。通过该措施使得可以通过选择性地通过对应的溶剂溶解所述填充材料以特别爱惜的方式将载体从混合晶片或芯片堆剥离，所述溶剂关于其它材料是不可选择的或者能与填充材料至少最大程度地隔绝。
所描述的载体被视为用于实施该方法的独立发明。
通过将基本层全平面地施加在支撑区域上以及至少部分地施加在粘附区域上，在载体上可用的平面几乎完全可用于制造芯片堆。在载体直径为300mm的情况下，从粘附区域的边缘至支撑区域的边缘的距离，尤其是环宽度介于0.5mm和10mm之间，尤其是1mm和5mm之间，优选2mm和4mm之间。
根据本发明的另一个有利的实施方式规定，在使载体松脱之前分离芯片堆，尤其是通过切割，使得芯片堆仅还与载体连接。在此方面，同时将基本层切割为分配给芯片堆的基本部分。
特别有利的是一种实施方式，其中形成基本层的材料是柔性的，尤其是与不使用层材料（模塑料）进行浇注而使用形成基本层的材料来浇注的措施相结合。由此使得可以制造特别薄和紧凑的封装，这些封装一方面具有非常高的机械鲁棒性，另一方面是机械柔性的（可弯曲）。这对于柔韧性是重要的特殊应用是特别有利的，尤其是对于智能卡或在稍后将封装施加在弯曲的面上时。
根据本发明的一种特别有利的实施方式规定，尤其是在建造芯片堆之前将成扇形展开接触结构引入到基本层中。由此将基本层用于其它目的并且由此形成芯片堆或混合晶片的其它功能组成部分。在这种情况下特别有利的还有，可以在放置芯片之前使成扇形展开接触结构经历质量测试，由此可以防止这些结构中的可能缺陷导致芯片或芯片堆被施加在非功能的成扇形展开接触结构上。
在此方面，成扇形展开接触结构与分别对应的芯片相比增大了可用的成扇形展开接触平面积，尤其是分别对应的芯片的至少1.5倍，优选2倍，更优选的是3倍，理想的是4倍。
在此方面特别有利的是，在建造芯片堆之前在背离载体侧的芯片侧上施加用于使芯片堆与成扇形展开接触结构电接触的接触垫。
此外有利的是，在建造芯片堆之前或之时，尤其是与引入接触结构同时地在基本层中/上设置用于将接触垫和/或芯片堆定位在基本层上、尤其是分别与芯片堆的边缘齐平的调整标记。替换的，调整标记可以与位于各个芯片上的调整标记对应。通过这种方式，基本层满足了其它的附加功能，并且通过上述措施进一步提高了芯片/芯片堆的调整精度。特别有利的是，基本层是可光刻的材料，尤其是可光刻的电介质。
根据本发明的替换的、独立的实施方式规定，芯片堆通过粘合而直接粘接在基本层上。这可以在借助附加粘合剂的情况下进行或者在使用基本层材料的可能粘接特性的情况下进行。从而根据本发明可以考虑借助所谓的芯片粘接来将芯片粘接起来。替换的根据本发明可以考虑，基本层材料是在未被照射的状态下最大程度地具有热塑料的特性的电介质。由此借助热机械粘接方法可以固定芯片。
特别有利的是，在建造了芯片堆之后以及在使载体松脱之前对芯片堆进行浇注，尤其是利用与基本层相应的层材料，因为由此可以构成特别柔韧并且同时稳定的芯片堆或混合晶片。
根据本发明的另一替换实施方式规定，载体的松脱从载体的侧边缘开始，尤其是通过减小粘附层的粘附力，优选通过选择性地溶解填充材料进行。通过本发明的措施，以尤其是对于浇注材料爱惜的方式实现了载体从基本层以及施加在基本层上的芯片堆的剥离。
载体从基本层的剥离根据本发明通过连接松脱装置来进行，所述连接松脱装置尤其是作用在粘附区域处并且影响在基本层和载体之间的粘附区域中起作用的粘附剂。
作为连接松脱装置可以设置流体溶剂，尤其是对连接进行选择性溶解的松脱装置。该化学溶解是特别经济的并且在相应的材料选择的情况下，该溶解可以非常快速地进行，尤其是当只有载体或基本层的边缘区域才配备有粘附层时，从而松脱装置可以从侧面快速作用。
根据本发明的一种替换实施方式规定，连接松脱装置包括用于使粘附松脱的机械分离装置，尤其是用于将基本层与载体在粘附区域中机械分离的楔子。还可以考虑机械分离装置和流体溶剂的组合。
在本发明的另一个替换的实施方式中规定，作为连接松脱装置包括用于使基本层与载体之间的粘附松脱开的UV光源。该实施方式也可以与机械分离装置的实施方式和/或流体溶剂的实施方式组合。
只要连接松脱装置尤其是仅从载体的侧边缘作用地构成，通常就可以放弃从上侧和/或下侧，尤其是从位于载体的侧边缘内或位于支撑区域中的载体区域开始对载体和/或混合晶片/芯片堆的作用。
通过设置用于旋转载体的旋转装置，可以放弃在载体的整个周边上设置连接松脱装置，并且部分设置在载体周边上就足以。
有利的是，为了向粘附层供应流体溶剂，设置固定在载体或载体容纳部位上的、尤其是密闭的溶剂容器以用于容纳该流体溶剂。通过该溶剂容器至少部分地包围载体的侧边缘或周边，可以特别有效地作用于连接层。此外，通过这种包围的措施可以防止流体溶剂从溶剂容器中溢出或者失去UV光强度。在使用机械分离装置的情况下，避免可能的杂质从溶剂容器中溢出并且污染混合晶片或芯片堆。溶剂容器可以在有利的设计中以横截面构造为L形或U形的。
根据本发明，粘附层、尤其是可选择性溶解的填充材料的溶解通过超声波辐射器加快，该超声波辐射器通过借助超声波或兆声波产生的空穴明显加快载体的溶解，从而剥离明显更爱惜地并且同时更快速地进行。超声波辐射器在此方面与所使用的溶剂接触，以保证最佳的声波传输。有利的是，超声波辐射器机械地集成到L形或U形的溶剂容器中。替换的，超声波辐射器还可以浸入溶剂中，只要该溶剂按照规定的方式被输送用于分离粘附层。
本发明还涉及一种载体，其在载体侧上配备有起粘附作用的粘附区域以及起较小粘附作用的支撑区域，其中基本层（20）可以最大程度地全平面地至少施加到支撑区域上，并且其中在载体侧上的粘附区域中、尤其是在相对于载体侧下凹的片段上优选与载体侧齐平地设置可选择性溶解的填充材料。利用这样构成的载体，本发明的方法可以按照特别有利的方式实施，因为混合晶片或芯片堆从载体的松脱至少最大程度地在不影响芯片堆和模塑料的情况下进行。由此保证对昂贵芯片堆的特别爱惜的松脱。根据本发明，还可以考虑在建造芯片堆和/或制造成扇形展开接触结构时将多个相邻的芯片堆组合为芯片堆结构（参见实施方式F）。
有利地还规定，载体的剥离集中地从载体的周边向载体的中心进行。
附图说明
本发明的其它优点、特征和细节由下面的描述、优选的实施例以及借助附图得出，附图中：
图1A至1E，9F1,10G1和11H1示出根据实施方式A至H将基本层施加在载体上的本发明步骤的示意图，
图2A至2E和11H2示出根据实施方式A至E和H将成扇形展开接触结构以及调整标记放置到基本层中的本发明步骤的示意图，
图3A至3E和11H3示出根据实施方式A至E和H将接触垫放置到基本层上的本发明步骤的示意图，
图4A至4E，9F2,10G4和11H4示出根据实施方式A至H将芯片以至少一个层次堆叠到基本层上的本发明步骤的示意图，
图5A至5E，10G5和11H5示出根据实施方式A至E，G和H用模塑料浇注芯片堆的本发明步骤的示意图，
图6A至6E，9F6,10G6和11H7示出根据实施方式A至H将具有芯片堆的基本层从载体松脱开的本发明步骤的示意图，
图7A至7E，10G10和11H8示出根据实施方式A至E，G和H施加焊接接头（凸起）的本发明步骤的示意图，
图8A至8E，9F7,10G11和11H9示出根据实施方式A至H分离载体上的芯片堆或混合晶片的本发明步骤的示意图，
图9F3示出根据实施方式F用与基本层相应的层材料浇注的本发明步骤的示意图，
图9F4示出根据实施方式F放置成扇形展开接触结构的本发明步骤的示意图，
图9F5示出根据实施方式F施加其它芯片层次和焊接接头（凸起）的本发明步骤的示意图，
图10G2示出根据实施方式G的本发明平版印刷步骤的示意图，
图10G3示出根据实施方式G的本发明平版印刷步骤的示意图，
图10G7示出用于根据实施方式G将混合晶片旋转180°的本发明步骤的示意图，
图10G8示出根据实施方式G的本发明蚀刻步骤的示意图，
图10G9示出根据实施方式G的放置成扇形展开接触结构的本发明步骤的示意图，
图11H6示出根据实施方式H溶解填充材料的本发明步骤的示意图。
在附图中示出实施方式A至H的单个或多个步骤，其中附图图标分别用参考标记A至H表示。实施方式A至E的各个步骤分别共同显示在一侧，而实施方式F，G和H的步骤分别单独显示为结果。
所述显示不需要本身已知的用于处理载体和/或用于执行各个步骤的设备而进行。
附图标记对于对应的部件是统一使用的，即使在不同的实施方式中选择不同的措施/材料时也是如此。
具体实施方式
本发明的解决主题在于，完全或至少最大程度地避免用于固定芯片30或芯片堆31的临时粘合剂（temporary adhesive）。代替于此地使用载体10，载体10具有利用减小的附着力/粘附力作用于混合晶片34与载体10之间的接触平面18的支撑区域11。支撑区域11利用减小的附着力接触待产生的混合晶片34的大部分平面，该混合晶片又由多个芯片堆31组成，每个芯片堆具有至少一个芯片层次33。该系统被堆叠为，使得接触平面18只有位于待产生的混合晶片34的最外面的混合晶片边缘35上的、尤其是环形的部分平面被施加在粘附区域14上，所述粘附区域利用高的附着力/粘附力作用于载体10上的接触平面18。
作为本发明含义下的载体10，可以使用适于制造混合晶片34的那些材料。但是典型的，使用从金属、陶瓷或半导体、以及石英、玻璃等的组之一中选择的材料。载体10在所示出的实施方式中具有圆形的形状并且构成为具有300mm直径的标准晶片。
载体10的支撑区域11通过填充层19（参见图1A）形成，该填充层与载体侧15齐平地放置到载体中。填充层19的厚度是至少3μm至100μm，优选10μm至50μm。
填充层19的施加/放置例如通过旋涂来进行。填充层19尤其是由具有5至50重量百分比、尤其是15至30重量百分比的固体物质的材料构成，其中固体物质从单体、低聚体和/或聚合体的组中选择，优选环烯烃聚合体和/或共聚体和/或具有高含量的原子氟的无定形含氟聚合体，氟含量尤其是超过30重量百分比，优选超过45重量百分比。
换句话说：填充层19具有以下所描述的一个或多个特征：
-填充层尤其是由具有低自由表面能的无定形聚合材料构成，
-通过填充层19至少在表面上含有较少至非常少的羟基或碳酸基的浓度，使得填充层对硅、玻璃和/或金属表面具有较小直至没有粘性，
-可由溶液形成，
芯片30的尤其是以多个层次存在的堆是专业人员已知的。在本发明的设计中，通过每个芯片30、尤其是在芯片边缘37上具有芯片调整标记38而使得所述堆有所改善，所述芯片调整标记用于相对于基本层20的调整标记25来调整芯片30（参见图4B）。可以通过以下详细步骤替换地制造支撑区域11或者对该支撑区域11的表面进行处理：
-利用疏水有机硅烷、例如（氟）烷基磷酸酯或（氟）烷基硅烷对由硅形成的表面进行化学处理，以减小自由表面能，或者
-在载体上化学气相蒸镀（CVD方法）具有小的自由表面能的涂层（例如氟化的聚对二甲苯），以便在支撑区域中产生持续的防粘附层或者产生该持续的防粘附层作为支撑区域。
这样的涂层的厚度尤其是在1nm和20nm之间，优选在2nm和10nm之间。
根据一种优选的实施方式，通过对载体10的表面的至少一部分进行化学修改而制造的这种支撑区域11如下来制造：
在直径为300mm的硅晶片（载体10）的表面上，在硅晶片的最外面的周边上的环形片段（粘附区域14）中施加基于环氧树脂的感光性树脂。环宽度在1mm和10mm之间。利用合适的溶剂将氟化的硅烷稀释为1%的溶液。该熔液通过旋涂施加在硅晶片的表面上。接着在加热平板上在100℃时对晶片硬化一分钟。接着在旋涂机中对该晶片进行喷涂，并重新在100℃时硬化一分钟。接着用丙酮在旋涂机中除去基于环氧树脂的感光性树脂，由此环形的粘附区域作为未被氟化的硅烷溶液处理的粘附区域保留。从而制造了具有支撑区域11的载体10。
然后在载体10上最大程度全平面地施加基本层20。尤其是，基本层20稍后至少部分地是最终混合晶片的一部分。但是在具体情况中也可以考虑，基本层至少部分地仅临时在芯片堆的建造期间使用。在这种情况下，该层在稍后时刻在整个制造处理流中的合适位置处又被最大程度地完全除去。在这种关联中，“最大程度地完全”被视为至少除去原始存在的层的99.5%，但是理想的除去99.9%，或更理想的是除去99.99%。在仅临时使用的基本层的关联中，可以实现以下特别有利的实施方式：基本层被用于制造可导电的金属连接，稍后这些金属连接可以通过除去这些层而被露出并由此可以被利用。这种处理在半导体工业中是常见的，并且以术语“牺牲层”而已知。为了能实现这种结构，根据所述结构的设计有利地可以使基本层由可感光结构化的材料构成。在这种关联中，“最大程度地全平面”应当理解为具有减小的粘附强度的支撑区域11的至少90%。但是在优化的实施方式中，该平面是至少98%，或者更理想的是大于支撑区域11。在圆形载体10的直径为300mm的情况下，具有高粘附力的粘附区域14典型地具有>0.5mm、理想地>1mm、更理想的是>2mm或>4mm的环宽度。
在基本层20比支撑区域11覆盖更大平面的情况下，根据实施方式F优选的是载体10在高粘附力的区域中具有片段12。该片段12在施加基本层20之前被填充材料13填充，直到填充材料13与支撑区域11齐平地形成平坦的载体侧15。在此方面，作为填充材料13理想地选择稍后可以通过从外部有针对性的作用而被选择性地松脱或除去的材料。作为这种用于作用的机制，可以考虑机械的、光学的和化学的方法或这些方法的组合。因此例如可以使用可以借助特定的溶剂溶解的材料，尤其是塑料。根据替换的实施方式，还可以使用可以借助特殊的蚀刻化学试剂溶解的无机材料。此外还可以考虑在紫外（UV）射线或红外（IR）射线的作用下可以松脱的材料。在此方面，片段12被构成为，使得具有较小粘附力的支撑区域11大约、优选恰好一直达到片段12的级17。该级17可以构成为直角边缘的形式或者还可以构成为倾斜分布的边缘。有利的是，可以借助湿蚀刻处理来制造这种倾斜分布的边缘，其中硅的晶体结构使得可以自动制造这种倾斜的边缘。
基本层20可以借助旋涂或喷涂或者层压来施加。在具体情况下，还可以使用诸如电镀层修补、浇注、挤压涂层等等的其它方法。
在本发明的优选实施方式中，基本层20的材料是可感光结构化的材料，尤其是可感光结构化的电介质。例如，在此可以采用苯环丁烷、（JSR?的）WPR 5100、ShinEtsu Chemicals?的SiNR?或Hitachi Chemicals的类似产品或Sumitomo电木，以及聚酰亚胺。专业人员了解这种材料，并且希望相应于通过最终应用和制造处理流定义的要求来选择这些材料。在优选的实施方式（A，B，C，D和H）中，现在可以在构造上在基本层20上制造用于芯片30的必要接线平面的导体线路21。这一般借助平版印刷和附加的处理来进行。例如，可以利用上面提到的感光的、电介质的材料来制造各个导体之间的绝缘，而借助屏障种子沉积（Barrier Seed Deposition）（溅射）和电化学沉积（电镀）来制造金属连接。这些处理在工业中是常见的并且对专业人员是已知的。紧接着制造接触垫22，稍后接触垫被用于容纳芯片30并且与芯片30接触。与这些接触垫22一起，理想地还设置使得可以相对基本层20准确调整芯片30的调整标记25。由此可以放弃外部的调整装置，这导致对芯片30的明显更准确的调整。
在替换的实施方式G中，仅照射基本层20，并且在照射之后对基本层进行加热处理（“曝光后烘烤（Post Exposure Bake）”）。该顺序导致在负性抗蚀剂的情况下被照射的位置化学络合，并且由此对于显影液来说是不可溶解的，而未被照射的位置仍然可以被溶解。在正性抗蚀剂的情况下恰好反过来：被照射的位置可以更好地在显影剂中溶解，而未被照射的位置很难被溶解。在此出于完整性的目的要注意，大多数电介质材料都具有负性抗蚀剂的特性。于是可以直接在由此已经被照射的基本层20上类似于处理A，B，C，D和H施加连接层次，或者直接在基本层20上放置芯片30。在这种情况下被证明有利的是，在加热被照射的电介质之前施加芯片30，并且稍后有利地将络合处理用于获得芯片30和基本层20的电介质材料之间的永久的粘附连接（接合连接）（实施方式G）。
另一个替换实施方式（根据图9F1至9F7的处理流F）在于，芯片30仅被粘附在基本层20上。这可以在借助附加粘合剂的情况下进行或者在使用基本层20的相应选择的材料的可能粘附特性的情况下进行。根据本发明可以考虑，借助所谓的芯片粘接来将芯片30粘接起来。替换的，基本层20的材料可以是电介质，尤其是上述在未被照射的状态下最大程度地具有热塑性塑料的特性的材料之一。由此借助热机械粘接方法可以固定芯片30。
对于实施方式A，B，C，D和H，在制造接触垫22之后放置芯片30或者分别由至少一个芯片30形成的芯片堆31。这可以借助常用的芯片到晶片（Chip-to-Wafer）的接合方法来进行，其中典型地借助临时粘合剂来预固定芯片30，并且稍后在回流处理中才形成永久的接合。在这种关联中，实施方式A和B是具有突起36的变型，其中借助流体介质或不流动底部填充（No-Flow-Underfill）来固定芯片30。在将所有芯片30都放置到基本层20上之后，具有多个预固定的芯片30的载体10才经历热处理（“回流处理（Reflow Prozess）”），在该热处理中突起36和接触垫22相互焊接在一起。在此方面，流体介质确保在该加热期间不会出现接触面的氧化。替换的，所谓的不流动底部填充可以承担相同的功能，该不流动底部填充也保留稍后的在芯片30之间的接合界面的永久部分，并从而用于提高机械稳定性。由此，不流动底部填充省去了稍后对芯片30之间的空隙的底部填充（在处理A和B中示出）。在使用这种不流动底部填充材料的情况下，通常还需要在热处理期间在芯片上施加压力，这有利地借助压板来进行，该压板同时还可以在位于载体上的所有芯片上施加压力。
在实施方式C、D和H中，示出放弃了突起36而替代地使用平坦的面的连接。这在后续实现了更密集的连接，因为放弃了在其它情况下很常用的突起36。连接的这种特殊形式通常借助所谓的“过渡液相（Transient Liquid Phase，TLP）”接合处理来制造。在此，实现共晶的金属连接，其中第一金属从液态相扩散到第二金属中，并且与该第二金属形成稳定的、具有高于第一金属的熔点的金属互化物。由此可以在较低的温度时实现以下接合连接：这些接合连接稍后具有超过最初接合温度的熔点。这使得这些连接特别适用于芯片30的多个芯片层次33的堆叠，因为由此不再影响已经被接合的层面的连接。这种接合连接的一个典型示例是由铜和锡构成的连接。但是铜和铟、金和锡、镍和锡、以及金和铟也是其它的可能性。从而例如对于这种铜-锡接合界面的接合温度大约在270℃至280℃附近，而完成的界面具有至少415℃的温度稳定性。在处理流C、D和H中示出的芯片30和芯片堆31在热处理之前被借助临时粘合剂固定，该临时粘合剂稍后在该热处理中被蒸镀以制造永久的金属接合。在此例如建议使用二苯乙烷。在此方面，可以或者在分别由芯片放置和用于形成永久接合界面的热处理组成的多个步骤中逐个芯片层33地制造芯片堆31或者由唯一的放置步骤和唯一的热处理流程来制造芯片堆31。相同的情况也类似地适用于处理流程A和B。
后续可选地为了实现更高的机械稳定性而借助底部填充材料对芯片堆31进行底部填充。替换的还可以考虑，代替上面描述的临时粘合剂而使用在完成用于制造芯片堆的永久部分的金属连接的热处理之后保留下来的材料。尤其是，该材料再次可以是所谓的不流动底部填充材料，或者可以是来自上述电介质的组中的其它合适材料。也可以考虑由金属接触面构成的混合接合界面，所述混合接合界面被非金属的电绝缘区域包围。对此的示例是被氧化硅包围的金属接触面。在此方面，具有相应良好质量的氧化硅也可以用于在室温时借助Van-der-Waals接合对芯片进行固定，所述Van-der-Waals接合稍后通过热处理被汇聚成一条永久的接合连接。
在处理E和F中，借助合适的方法将芯片30相互连接。例如可以是平版印刷方法，如在实施方式F中所示。在此方面，可以再次采用如上所述的材料和方法。尤其是在此借助喷涂来施加电介质是合适的，以便能嵌入芯片以及能对通过芯片30形成的显著的形貌结构进行平面化。
实施方式E示出一种变型，其中连接的至少一部分也借助金属线接合（Wire Bonding）来制造。
两个变型E和F将展示出该方法的灵活性，并且清楚表明本发明是一种极其通用的方法，其使得可以将很多连接技术捆绑在一起。
在每个连接制造完成以后以及在底部填充处理之后，用浇注连接（模塑料）填充剩余的自由空间。浇注连接用于使芯片/芯片堆稳定并且尤其用于增大芯片/芯片堆。
在此实施方式F形成例外，在该实施方式中放弃模塑料，由此可以实现特别薄和紧凑的封装。如果在这种情况下芯片厚度被选择得相应薄，以及电介质材料具有相应的机械鲁棒性，则这可以由浇注到与基本层20的材料相应的层材料40中的芯片堆31构成机械非常柔韧（可弯曲）的封装，所述芯片堆特别适用于这种柔韧性是有利的特殊应用。例如，这可以是智能卡应用，或者是其中封装应当安装在弯曲面上的应用。
紧接着浇注步骤，将混合晶片34从载体10松脱。有利地这在载体10如实施方式H所述那样构成时可行。在这种情况下，首先溶解作为合适的粘合剂构成的涂层材料13。然后紧接着将混合晶片34从载体10剥离。有利地该剥离按照其中利用载体10和/或混合晶片34的柔韧性使得该剥离处理从定义的位置开始并且从起点开始的分离波在整个平面上行进并最后将混合晶片34与载体10分开的方式进行。但是至少该分离波必须从边缘向载体10的中心行进。为了有利于和/或为了启动该分离波的开始，有帮助的以及有必要的可以是，在载体10与混合晶片34之间的界面中插入机械分离元件。这例如可以是楔或椎体或锯条。也可以考虑具有合适横截面的张紧的线。替换的，分离处理可以借助水或气体射线来启动和/或加以支持。
在实施方式F中的方法流程根据图9F1至9F7如下进行：
在图9F1所示的方法步骤中，在具有形成支撑区域11的填充层19的载体10上施加基本层20。基本层20完全覆盖支撑区域11并且稍微超出该支撑区域11。基本层20的超出支撑区域11的环形片段位于基本层20在粘附区域14上的整个周边上，该基本层每面积单位具有是粘附区域的至少3倍的粘附力。由此基本层20基本上仅保持在粘附区域14中。
接着，如图9F2所示，芯片30在基本层20的背离载体10的那一侧上被施加在基本层20上，并且是利用拾取和放置工具。在可以多层次地施加的芯片30的背离基本层20的那一侧施加接触垫22，所述接触垫用于稍后被以成扇形展开接触结构形式的导体线路21（参见图9F4）接触。
在图9F3所示的步骤中，与基本层20的材料相应的层材料40全平面地施加在基本层20上，其中层材料40在施加时被构成为，使得该层材料侵入在芯片堆31之间形成的自由空间中而不会形成气泡。
在图9F4所示的方法步骤中，尤其是逐层地构建用于接触接触垫22和/或相邻的芯片30的导体线路21。导体线路可以通过平版印刷步骤或者通过模压方法来制造。
在图9F5所示的方法步骤中，为接触印刷电路板而设置的成扇形展开接触结构21由层材料40制成，其中成扇形展开接触结构21的接头配备有连接突起50，所述连接突起用于将混合晶片34根据9F7连接到对应的印刷电路板。
在图9F6所示的步骤中，载体10与基本层20分离，并且基本上通过按照上述方式作用于粘附区域14。
在图9F7中示出分立的芯片堆31，其中基本层20的同样分立的基本部件26用作载体。
图10G1至10G11示出根据实施方式G的制造。根据图10G1的第一方法步骤与根据图9F1的方法步骤相应，同样与图1A，1B，1C，1D和1E所示的方法步骤相同。
在根据图10G2的方法步骤中，用于平版印刷处理的感光掩膜90对准地设置在基本层20上方，并且在根据图10G3的方法步骤中穿透该感光掩膜90地照射基本层20。
在基本层20的被照射的照射位置27的区域中，根据图10G4在接触垫22上方将芯片30构建成芯片层次31，其中在芯片边缘37上的芯片调整标记38用于将芯片30相互对准并且与基本层20对准。
在根据图10G5的方法步骤中，利用层材料40对芯片30进行浇注，而且全平面地在基本层20上进行。
在根据图10G6的方法步骤中，类似于图9F6除去载体10，并且在根据图10G7的方法步骤中，将混合晶片34倒立，也就是倒过来。
在根据图10G8的方法步骤中，露出基本层20的照射位置27，尤其是通过蚀刻，接着在根据图10G9的方法步骤中在露出的照射位置27中构成导体线路21。
在根据图10G10的方法步骤中，用于将芯片堆31与印刷电路板连接的连接突起50与导体线路21接触。
在根据图10G11的方法步骤中，分离出混合晶片31的芯片堆31。
在根据图11H1至11H9的特别优选的实施方式H中，类似于根据图9F1的方法施加根据图11H1基本层20，区别在于载体10接着在粘附区域14中，也就是在支撑区域11处具有相对于载体侧15跃回、近似形成凸肩的片段12。在将基本层20施加在载体10上之前，利用起粘附作用的填充材料13填充片段12，使得填充材料13与支撑区域11齐平地构成。基本层20在填充材料13的上侧的环形片段中至少部分地位于该填充材料13上。填充材料13由此至少部分地形成粘附区域14。
根据图11H2的方法步骤与根据图2D的方法步骤（实施方式D）相应，在根据图11H2的方法步骤中在基本层20中构成导体线路21和调整标记25。
根据图11H3的方法步骤与根据图3D的方法步骤相应，在根据图11H3的方法步骤中将接触垫22施加在基本层20上，并且施加在与同时形成成扇形展开接触结构的导体线路21的接触位置上。
根据图11H4的方法步骤与根据图4D的方法步骤相应，在根据图11H4的方法步骤中芯片堆31通过将芯片30堆叠成4个芯片层次33来形成。芯片层次33的芯片30通过TSV和将各TSV连接的接触而相互连接。
在与根据图5D的方法步骤相应的根据图11H5的方法步骤中，芯片堆31通过层材料40浇注。
在根据图11H6的方法步骤中，通过对应的、选择性地与填充材料13相反作用的溶剂去掉填充材料13，从而在接下来的根据图11H7的方法步骤中可以将载体10毫无问题地从混合晶片34松脱开。
在根据图11H8的方法步骤中，在基本层20上的连接突起50与成扇形展开接触结构的对应接触位置接触。
在根据图11H9的方法步骤中，将芯片堆31分离出来。
附图标记列表
10载体
11支撑区域
12片段
13填充材料
14粘附区域
15载体侧
16侧边缘
17级
18接触面
19填充层
20基本层
21导体线路
22接触垫
24芯片侧
25调整标记
26基本部件
27照射位置
30芯片
31芯片堆
32芯片堆边缘
33芯片层次
34混合晶片
35混合晶片边缘
36突起
37芯片边缘
38芯片调整标记
40层材料
50连接突起
90感光掩膜

Claims (14)

1.用于制造芯片堆（31）的方法，具有以下方法流程：
-在载体（10）的载体侧（50）上施加尤其是介电的和/或可感光结构化的或者可通过模压方法结构化的基本层（20），所述载体在其载体侧（15）上配备有起粘附作用的粘附区域（14）以及起较小粘附作用的支撑区域（11），其中基本层（20）最大程度全平面地至少施加在支撑区域（11）上，
-在基本层（20）上建造芯片堆（31），
-将载体（10）从基本层（20）松脱开。
2.根据权利要求1所述的方法，其中在载体侧（15）上的粘附区域（14）中、尤其是在相对于载体侧（15）下凹的片段（12）上优选与载体侧（15）齐平地设置能选择性溶解的填充材料（13）。
3.根据权利要求1所述的方法，其中基本层（2）全平面地施加在支撑区域（11）上并且至少部分施加在粘附区域（14）上。
4.根据权利要求1所述的方法，其中芯片堆（31）在载体（10）松脱开之前就被分离，尤其是通过切割，使得芯片堆（31）还仅与载体（10）连接。
5.根据权利要求1所述的方法，其中形成基本层（20）的材料是柔韧的。
6.根据权利要求1所述的方法，其中尤其是在建造芯片堆（31）之前将成扇形展开接触结构（21）引入到基本层（20）中。
7.根据权利要求6所述的方法，其中在建造芯片堆（31）之前在背离载体侧（15）的芯片侧（24）上施加用于将芯片堆（31）与成扇形展开接触结构（21）电接触的接触垫（22）。
8.根据权利要求6所述的方法，其中在建造芯片堆（31）之前或之时，尤其是与根据权利要求6引入成扇形展开接触结构（21）同时，在基本层（20）中/上设置用于在基本层（20）上定位/放置接触垫（22）和或芯片堆（31）的调整标记（25），尤其是分别与芯片堆（31）的芯片堆边缘（32）齐平。
9.根据权利要求1所述的方法，其中芯片堆（31）通过粘接直接粘接在基本层（20）上。
10.根据上述权利要求之一所述的方法，其中在建造芯片堆（31）之后以及在载体（10）松脱之前用尤其是与基本层（20）的材料相应的层材料（40）浇注芯片堆。
11.根据权利要求1或2所述的方法，其中载体（10）的松脱从载体（10）的侧边缘开始，尤其是通过减小粘附层（14）的粘附力，优选通过选择性地溶解填充材料（13）进行。
12.根据上述权利要求之一所述的方法，其中基本层（20）的基本部件（26）形成每个芯片堆（31）的一部分。
13.用于制造芯片堆（31）的方法，具有以下方法流程：
-在载体（10）的载体侧（50）上施加基本层（20），所述载体在其载体侧（15）上配备有尤其是基本上形成整个载体侧（15）的起粘附作用的粘附区域（14），其中基本层（20）全平面地施加在粘附区域（14）上，并且其中粘附区域（14）与基本层（20）的接触面在施加基本层（20）之前经历表面修改，
-在基本层（20）上建造芯片堆（31），
-将载体（10）从基本层（20）松脱开。
14.载体（10），其在载体侧（15）上配备有起粘附作用的粘附区域（4）以及起较小粘附作用的支撑区域（11），其中基本层（20）能最大程度全平面地至少施加到支撑区域（11）上，并且其中在载体侧（15）上的粘附区域（14）中、尤其是在相对于载体侧（15）下凹的片段（12）上优选与载体侧（15）齐平地设置能选择性溶解的填充材料（13）。
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