CN103160809B - Gas dispersion device used in a growth process of wafer polycrystalline silicon film and growth process - Google Patents
Gas dispersion device used in a growth process of wafer polycrystalline silicon film and growth process Download PDFInfo
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- CN103160809B CN103160809B CN201110423306.4A CN201110423306A CN103160809B CN 103160809 B CN103160809 B CN 103160809B CN 201110423306 A CN201110423306 A CN 201110423306A CN 103160809 B CN103160809 B CN 103160809B
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Abstract
The invention provides a gas dispersion device used in a growth process of a wafer polycrystalline silicon film and a growth process. The gas dispersion device comprises a main intake tube (3), a central tube and a compensation intake tube, wherein both ends of three tubes are respectively communicated, after communication, one end is connected with a main air inlet (1) and the other end is connected with a secondary air inlet (2), main inlet holes are distributed on the main intake pipe at equal distance, the compensation intake tube is a reducing tube, wherein one section of the compensation intake tube is a main compensation intake tube (4), one end of the compensation intake tube is a secondary compensation intake tube (5), main compensation air inlet holes are distributed on the main compensation intake tube at equal distance, and secondary compensation air inlet holes are distributed on the secondary compensation intake tube at equal distance. Flow quantity and flow speed of gas are controlled by three intake tubes in different sizes, different distributed distances distributed in the intake tubes and hole sizes, so that a stable gas model is formed in a reaction cavity. The gas dispersion device used in the growth process of the wafer polycrystalline silicon film and the growth process has the advantages that in comparison with the original temperature gradient growth film, quality is greatly increased, process control is simple, cost is reduced, and production cost is reduced by more than 20%.
Description
Technical field
The present invention relates to gas-dispersion device and growth technique in wafer polysilicon film process of growth
Background technology
Along with developing rapidly of domestic IC industry, the demand of silicon substrate material is also increasing, specification of quality is more and more stricter, particularly IC device is done to silicon substrate material front surface and need formation clean area, in order to reach this object, introduce gettering process, traditional technique is divided into intrinsic gettering and outer gettering two kinds, but all bad control of these two kinds of methods, along with people constantly study gettering, finally invent enhancement type gettering, namely one deck polysilicon is grown at the back side of silicon substrate material, like this when the different substances of two kinds of coefficient of thermal expansion and contraction is linked togather, usually because the surface of the different bi-materials of coefficient of thermal expansion and contraction all can be subject to the effect of certain stress.According to the formation mechenism of the defect of crystals, the defect of crystals is by the regional centralized to stress enrichment, to alleviate. reduce stress field, the result that defect is concentrated is that the defect of silicon chip surface is concentrated to the back side of silicon chip, while lattice defect changes, the Sauerstoffatom of silicon substrate material and metal also can as the gas phase diffusion outside crystal, go because the Sauerstoffatom on the surface of silicon chip and metal are the most easily diffused in the gas phase of the environment at silicon chip place, to there is clean area in the upper layer of silicon chip, thus reach the object of gettering.
To sum up polysilicon gettering effect is better, while introducing polycrystalline gettering process, the growth of polycrystalline also becomes a problem constantly studied, now relatively conventional is exactly that the mode of LPCVD grows, general employing Horizontal type stove, but in process of growth, traditional mode is the mode adopting the air inlet of fire door one end, such process gas silane enters in stove and can reduce gradually, the thickness of inlet end and outlet side growth is caused to differ greatly, processing requirement can not be met, in order to reach identical thickness, people take a lot of way, such as design temperature gradient, although the polycrystalline film thickness grown out like this can be consistent, but the homogeneity of film and gettering ability different, cause quality product inconsistent, took again the mode of three sections of air inlets afterwards, although thermograde and film quality problem can be solved, but scrap build and increase under meter cost and installation and maintenance comparatively complicated, and three flow technique adjustment also relative complex, tooling cost is high.Therefore be necessary to provide a kind of gas-dispersion device and growth technique.
Summary of the invention
The object of this invention is to provide a kind of for gas-dispersion device and growth technique in wafer polysilicon film process of growth, this technique, device are simple, and improvement and installation is convenient, technology controlling and process is simple, working efficiency is high, and tooling cost is low, and polysilicon film quality uniform quality is consistent.
For achieving the above object, the present invention takes following design:
This for the gas-dispersion device in wafer polysilicon film process of growth, it comprises: main inlet pipe, pipe core, compensate inlet pipe, the both ends of above-mentioned three pipes are communicated with respectively, a termination primary air inlet after connection, another termination time inlet mouth, main inlet pipe is equidistantly dispersed with primary inlet port, compensation inlet pipe is adapter bonnet, and one section is main compensation inlet pipe, and one end is time compensation inlet pipe, main compensation inlet pipe is equally spaced main compensation air inlet port, secondary compensation inlet pipe has time compensation air inlet port be equally spaced.
This wafer polysilicon film growth technique of gas-dispersion device that utilizes comprises following step:
Gas-dispersion device of the present invention is loaded on horizontal stove; Adopted rewinder that silicon chip is imported on quartz boat, and put on silicon chip loading device be equipped with silicon chip quartz boat; Deposition chamber is set fixing temperature and pressure; Set MFC1, MFC2 silane flow rate (two ends meet silane MFC1, silane MFC2 respectively); Open silane flow rate, gas enters growth chamber along this apparatus design flow and carries out polycrystalline film growth; Require to calculate growth time according to thickness, close silane after the time arrives, carry out cavity purification; Take out silicon chip, carry out Surface testing, thickness test, according to homogeneity in SEMI criterion calculation sheet and between sheet; Take out 1 and carry out clean district, the corrosion test surface degree of depth.Process gas silane is transported to by fixing airflow model in reaction chamber the growth completing polysilicon film by dispensing device of the present invention.
Advantage of the present invention is: in horizontal stove, be provided with a simple gas-dispersion device, transformation is installed simple, only need be placed in stove, two ends air inlet, can reach constant temperature growth, technique adjustment is simple simultaneously, save a silane MFC (cost is very high and need regular maintenance) simultaneously, through test, produce film quality gettering performance by this device very good, when growth 8000 dust, front can form the clean area of 80 microns; And every stove 100 blade is interior and between sheet, homogeneity is all less than 2% (customer requirement 10%), calculates monolithic growth cost and reduces more than 20%, really reach the object that work simplification, increased quality and cost reduce simultaneously.
Accompanying drawing explanation
Fig. 1: crystal silicon film growth technique schema of the present invention
Fig. 2: this gas-dispersion device is installation site schematic diagram in LPCVD Horizontal type stove
Fig. 3: the front view of gas-dispersion device of the present invention
The left view of Fig. 4: Fig. 3
Fig. 5: the simple knot composition of gas-dispersion device of the present invention
In Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5,1, primary air inlet, 2 inlet mouths, 3 main inlet pipe, 4 main compensation inlet pipe, one end is time compensation inlet pipe 5,6 for reinforcing rod (reinforcing rod is exactly stuffed quartz rod), and A is this device, and T is cavity inner temperature, P is growth pressure in cavity, and F is silicon wafer carrying device.
Embodiment
As shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4, Fig. 5,
This for the gas-dispersion device in wafer polysilicon film process of growth, it comprises: main inlet pipe 3, pipe core, compensate inlet pipe, the both ends of above-mentioned three pipes are communicated with respectively, a termination primary air inlet 1 after connection, another termination time inlet mouth 2, main inlet pipe is equidistantly dispersed with primary inlet port, described compensation inlet pipe is adapter bonnet, and wherein one section is main compensation inlet pipe 4, and one end is time compensation inlet pipe 5, main compensation inlet pipe is provided with the main compensation air inlet port be equally spaced, and secondary compensation inlet pipe is provided with time compensation air inlet port be equally spaced.
This device total length 1 is 2250-2255mm; This device material is electronic-grade quartz material, and material therefor wall thickness is 1.5mm
Primary air inlet length a is 148-152mm, and internal diameter Φ 7 is 7mm, and secondary inlet mouth length b is 198-202mm, and internal diameter Φ 5 is the main intake manifold length h of 6mm. is 1900-1910mm, and internal diameter Φ 6 is 5-6mm; Be dispersed with equidistant primary inlet port above, primary inlet port spacing g is 110-120mm, and primary inlet port diameter of phi 1 is 2.4-2.6mm
Main compensation intake manifold length f is 1055-1065mm, and internal diameter Φ 4 is 14-16mm; Be dispersed with equidistant main compensation air inlet air inlet port above, main compensation air inlet port spacing e is 90-100mm, and compensating air inlet air inlet port bore dia Φ 2 is 4.9-5.1mm.
Secondary compensation intake manifold length y is 980-990mm, and internal diameter Φ 8 is 5-6mm; Be dispersed with equidistant time compensation air inlet port above, secondary compensation air inlet port spacing m is 50-60mm, and compensating air inlet air inlet port diameter of phi 3 is 1.4-1.6mm.
From primary air inlet end to the distance c of first main compensation air inlet port be 510-530mm.: be 1070-1080mm from first main compensation air inlet port to the distance d that first time compensates air inlet port, from primary air inlet end to the distance k of first primary inlet port be 450-470mm.
Primary air inlet and main inlet pipe junction radian R1 are 14-15mm, primary air inlet and main compensation inlet pipe junction radian R2 are 16-17mm, secondary air inlet port and main inlet pipe junction radian R4 are 14-15mm, and to be connected radian R3 be 14-15mm to secondary inlet mouth with time compensating inlet pipe.
Embodiment 1
Consult shown in Fig. 1 ~ Fig. 5, growing polycrystalline silicon membrane method of the present invention comprises the steps: first on horizontal stove, to install this device; First a stove is grown with 100 4 inch silicon wafer,
Adopt device for piling sheets to be managed by silicon chip, silicon chip reference surface upwards; With rewinder, silicon chip is imported quartz boat.By 4 quartz boats totally 100 flake products sheets put into horizontal stove, adjustment silane MFC1 flow is 75-80sccm, silane MFC2 flow is 35-40sccm, growth temperature is 650 degree, deposition pressure is 450MT, grow, growth time is 60 minutes, silicon chip is taken out after growth, test thickness is 5540 dusts, and in sheet, homogeneity is 0.56% (requiring 10%), and between 100 blade, homogeneity is 1.34% (requiring 10%), taking out a slice corrosion rear is 75 microns (requiring 30 microns) with microscopic examination clean area, meets IC processing request completely.(this uniformity test mentioned is completely by SEMI standard)
Embodiment 2
Consult shown in Fig. 1 ~ Fig. 5, growing polycrystalline silicon membrane method of the present invention comprises the steps: first on horizontal stove, to install this device; First a stove is grown with 100 6 inch silicon wafer,
Adopt device for piling sheets to be managed by silicon chip, silicon chip reference surface upwards; With rewinder, silicon chip is imported quartz boat.By 4 quartz boats totally 100 flake products sheets put into horizontal stove, adjustment silane MFC1 flow is 75-80sccm, silane MFC2 flow is 35-40sccm, growth temperature is 650 degree, quiet pressure is 450MT, grow, growth time is 60 minutes, silicon chip is taken out after growth, test thickness is 5552 dusts, and in sheet, homogeneity is 0.64% (requiring 10%), and between 100 blade, homogeneity is 1.52% (requiring 10%), taking out a slice corrosion rear is 68 microns (requiring 30 microns) with microscopic examination clean area, meets IC processing request completely.(this uniformity test mentioned is completely by SEMI standard)
Embodiment 3
Consult shown in Fig. 1 ~ Fig. 5, growing polycrystalline silicon membrane method of the present invention comprises the steps: first on horizontal stove, to install this device; First a stove is grown with 100 5 inch silicon wafer,
Adopt device for piling sheets to be managed by silicon chip, silicon chip reference surface upwards; With rewinder, silicon chip is imported quartz boat.By 4 quartz boats totally 100 flake products sheets put into horizontal stove, adjustment silane MFC1 flow is 75-80sccm, silane MFC2 flow is 35-40sccm, growth temperature is 650 degree, quiet pressure is 450MT, grow, growth time is 60 minutes, silicon chip is taken out after growth, test thickness is 5574 dusts, and in sheet, homogeneity is 0.58% (requiring 10%), and between 100 blade, homogeneity is 1.42% (requiring 10%), taking out a slice corrosion rear is 72 microns (requiring 30 microns) with microscopic examination clean area, meets IC processing request completely.(this uniformity test mentioned is completely by SEMI standard)
Embodiment 4
Consult shown in Fig. 1 ~ Fig. 5, growing polycrystalline silicon membrane method of the present invention comprises the steps: first on horizontal stove, to install this device; First a stove is grown with 100 6 inch silicon wafer,
Adopt device for piling sheets to be managed by silicon chip, silicon chip reference surface upwards; With rewinder, silicon chip is imported quartz boat.By 4 quartz boats totally 100 flake products sheets put into horizontal stove, adjustment silane MFC1 flow is 75-80sccm, silane MFC2 flow is 35-40sccm, growth temperature is 670 degree, quiet pressure is 400MT, grow, growth time is 60 minutes, silicon chip is taken out after growth, test thickness is 5621 dusts, and in sheet, homogeneity is 0.78% (requiring 10%), and between 100 blade, homogeneity is 1.61% (requiring 10%), taking out a slice corrosion rear is 76 microns (requiring 30 microns) with microscopic examination clean area, meets IC processing request completely.(this uniformity test mentioned is completely by SEMI standard)
Claims (10)
1. one kind for gas-dispersion device in wafer polysilicon film process of growth, it is characterized in that: it comprises: main inlet pipe (3), pipe core, compensate inlet pipe, the both ends of above-mentioned three pipes are communicated with respectively, a termination primary air inlet (1) after connection, another termination time inlet mouth (2), main inlet pipe is equidistantly dispersed with primary inlet port, described compensation inlet pipe is adapter bonnet, wherein one section is main compensation inlet pipe (4), one end is time compensation inlet pipe (5), main compensation inlet pipe is provided with the main compensation air inlet port be equally spaced, secondary compensation inlet pipe is provided with time compensation air inlet port be equally spaced.
2., according to claim 1 for gas-dispersion device in wafer polysilicon film process of growth, it is characterized in that: this device total length l is 2250-2255mm; This device material is electronic-grade quartz material, and material therefor wall thickness is 1.5mm.
3. according to claim 1 for gas-dispersion device in wafer polysilicon film process of growth, it is characterized in that: primary air inlet length a is 148-152mm, internal diameter Φ 7 is 7mm, secondary inlet mouth length b is 198-202mm, internal diameter Φ 5 is 6mm, main intake manifold length h is 1900-1910mm, and internal diameter Φ 6 is 5-6mm; Be dispersed with equidistant primary inlet port above, primary inlet port spacing is 110-120mm, and primary inlet port diameter of phi 1 is 2.4-2.6mm.
4. according to claim 1 for gas-dispersion device in wafer polysilicon film process of growth, it is characterized in that: main compensation intake manifold length f is 1055-1065mm, and internal diameter Φ 4 is 14-16mm; Be dispersed with equidistant main compensation air inlet air inlet port above, main compensation air inlet port spacing e is 90-100mm, and compensating air inlet air inlet port bore dia Φ 2 is 4.9-5.1mm.
5. according to claim 1 for gas-dispersion device in wafer polysilicon film process of growth, it is characterized in that: secondary compensation intake manifold length y is 980-990mm, and internal diameter Φ 8 is 5-6mm; Be dispersed with equidistant time compensation air inlet port above, secondary compensation air inlet port spacing m is 50-60mm, and compensating air inlet air inlet port diameter of phi 3 is 1.4-1.6mm.
6., according to claim 1 for gas-dispersion device in wafer polysilicon film process of growth, it is characterized in that: from primary air inlet end to the distance c of first main compensation air inlet port be 510-530mm; Distance d from first main compensation air inlet port to first compensation air inlet port is 1070-1080mm; From primary air inlet end to the distance k of first primary inlet port be 450-470mm.
7. according to claim 1 for gas-dispersion device in wafer polysilicon film process of growth, it is characterized in that: primary air inlet and main inlet pipe junction radian R1 are 14-15mm, primary air inlet and main compensation inlet pipe junction radian R2 are 16-17mm, secondary air inlet port and main inlet pipe junction radian R4 are 14-15mm, and to be connected radian R3 be 14-15mm to secondary inlet mouth with time compensating inlet pipe.
8. utilize a wafer polysilicon film growth technique for the gas-dispersion device described in claim 1, it is characterized in that: it comprises the following steps:
1) gas-dispersion device according to claim 1 is loaded on horizontal stove;
2) adopted rewinder that silicon chip is imported on quartz boat, and put on silicon chip loading device be equipped with silicon chip quartz boat;
3) deposition chamber is set fixing temperature and pressure;
4) MFC1, MFC2 silane flow rate is set;
5) open silane flow rate, gas enters growth chamber along this apparatus design flow and carries out polycrystalline film growth;
6) require to calculate growth time according to thickness, close silane after the time arrives, carry out cavity purification;
7) take out silicon chip, carry out Surface testing, thickness test, according to homogeneity in SEMI criterion calculation sheet and between sheet;
8) take out 1 and carry out clean district, the corrosion test surface degree of depth.
9. wafer polysilicon film growth technique according to claim 8, it is characterized in that: cavity inner temperature T is 650-700 DEG C, in cavity, growth pressure P1 is 450-550MT.
10. wafer polysilicon film growth technique according to claim 8 or claim 9, is characterized in that: silane flow rate SiH
4mFC1 flow is 75-80sccm; Silane flow rate SiH
4mFC2 flow is 35-40sccm.
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| CN103160809B true CN103160809B (en) | 2015-06-24 |
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| CN105845548A (en) * | 2015-01-16 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Silicon substrate and a manufacturing method thereof |
| CN104876222B (en) * | 2015-04-10 | 2017-05-24 | 上海交通大学 | Polycrystalline silicon production method and device by pyrogenation of silane |
| CN105543955A (en) * | 2016-02-26 | 2016-05-04 | 上海华力微电子有限公司 | Vertical furnace pipe prepared from polysilicon and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5571333A (en) * | 1994-06-02 | 1996-11-05 | Shin-Etsu Handotai Co. Ltd. | Heat treatment furnace with an exhaust baffle |
| CN201713608U (en) * | 2010-07-16 | 2011-01-19 | 常州天合光能有限公司 | Silicon chip diffusion furnace for solar battery |
| CN202430283U (en) * | 2011-12-16 | 2012-09-12 | 有研半导体材料股份有限公司 | Gas dispersion device used in growth process of wafer polycrystalline silicon film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5571333A (en) * | 1994-06-02 | 1996-11-05 | Shin-Etsu Handotai Co. Ltd. | Heat treatment furnace with an exhaust baffle |
| CN201713608U (en) * | 2010-07-16 | 2011-01-19 | 常州天合光能有限公司 | Silicon chip diffusion furnace for solar battery |
| CN202430283U (en) * | 2011-12-16 | 2012-09-12 | 有研半导体材料股份有限公司 | Gas dispersion device used in growth process of wafer polycrystalline silicon film |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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