CN103262271A - Method for producing optoelectronic component and optoelectronic component - Google Patents
Method for producing optoelectronic component and optoelectronic component Download PDFInfo
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- CN103262271A CN103262271A CN2011800615231A CN201180061523A CN103262271A CN 103262271 A CN103262271 A CN 103262271A CN 2011800615231 A CN2011800615231 A CN 2011800615231A CN 201180061523 A CN201180061523 A CN 201180061523A CN 103262271 A CN103262271 A CN 103262271A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K2102/301—Details of OLEDs
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Abstract
The invention relates to a method (900) for producing an optoelectronic component (200) in various embodiment examples. The method (900) can comprise forming (902) an organic functional laminar structure (206) on or over a first electrode layer (204); forming (904) a second electrode layer (214) on or over the organic functional laminar structure (206); and forming (906) a local modification structure (214) of the material of each layer in at least one of the layers of the optoelectronic component (200) and at at least one predefined position.
Description
Technical field
The present invention relates to a kind of method for the manufacture of opto-electronic device and a kind of opto-electronic device.
Background technology
In Organic Light Emitting Diode, by the partly directly coupling output from Organic Light Emitting Diode of light of described Organic Light Emitting Diode generation.Remaining light is distributed in the different loss passages, shown in the diagram of the Organic Light Emitting Diode 100 in Fig. 1.Fig. 1 illustrates the Organic Light Emitting Diode 100 that has glass substrate 102 and be arranged on the first transparent electrode layer of being made by indium tin oxide (ITO) 104 on the described glass substrate.First electrode layer 104 is provided with first organic layer 106, and described first organic layer is provided with emission layer 108.Emission layer 108 is provided with second organic layer 110.In addition, second organic layer 110 is provided with the second electrode lay 112 that is made of metal.Power supply 114 is coupled to first electrode layer 104 and the second electrode lay 112, makes that guide current is by being arranged on the layer structure between the electrode layer 104,112 in order to produce light.Electric energy in the surface plasma of first arrow 116 expression in the second electrode lay 112 transmits.Another loss passage can the form with absorption loss be observed (by means of 118 expressions of second arrow) in the light transmission path.The light of coupling output for example is the part of following light from Organic Light Emitting Diode 100: described light since the part of the light that produces in the boundary face reflection (by means of 122 expressions of the 3rd arrow) of glass substrate 102 and air and owing to the reflection (by means of four arrow 124 represent) of a part on the boundary face between first electrode layer 104 and the glass substrate 102 of the light that produces forms.The part from glass substrate 102 coupling outputs of the light that produces is represented by means of the 5th arrow 120 among Fig. 1.Therefore, intuitively, for example there is following loss passage: the light loss consumption in glass substrate 102, the consumption of the light loss in organic layer 106,110 and the surface plasma that produces at metallic cathode (the second electrode lay 112).These light parts can not coupling output from Organic Light Emitting Diode 100 easily.
For the output substrate mode wave (Substratmoden) that is coupled usually applies so-called coupling output film at the downside of the substrate of Organic Light Emitting Diode, described coupling output film can by means of optical scattering or by means of lenticule with the light output that from substrate, is coupled.In addition, be known that and directly make the substrate surface structuring of exposing.Yet, by this method the outward appearance of Organic Light Emitting Diode is caused appreciable impact.Thus, draw milky substrate surface.
At present, there is different solutions for the coupling of the light in the organic layer of Organic Light Emitting Diode output, yet, also do not reach the realization matured product in these solutions.
In addition, these solutions are:
Periodic structure is incorporated in the active layer of Organic Light Emitting Diode (photonic crystal).Yet described periodic structure has extremely strong wavelength dependence, because photonic crystal only can be with certain wavelengths coupling output.
The substrate of high index of refraction is used for the direct coupling of the light of organic layer is input to substrate.This solution is because the substrate of high index of refraction expensive but extremely expensive.In addition, the substrate of high index of refraction depends on other coupling output auxiliary members of the form of lenticule, scattering film (having high index of refraction respectively) or surface structuration portion.
Summary of the invention
Different embodiment can be implemented within the opto-electronic device, manufacturing structure within Organic Light Emitting Diode for example, by described structure example as not only can and the optical coupling in one or more organic layers of opto-electronic device being exported the light in the substrate.For example, can come manufacturing structure by means of the corresponding material of localized heating (for example fusing), wherein should for example carve to form described structure by means of laser inside.
In different embodiment, be provided for making the method for opto-electronic device.Described method can comprise: on first electrode layer or above form organic functional layer structure; On the organic function layer structure or above form the second electrode lay; And the part that forms the material of corresponding layer at least one of the layer of opto-electronic device at least one default position changes structure.
In a design, can form the local structure that changes at least one default position by means of the material of the corresponding layer of localized heating, for example a plurality of local structures that change.
In another design, can use the localized heating that laser carries out the material of corresponding layer.
In another design, can use the localized heating that laser carries out the material of corresponding layer, make corresponding layer is carried out the inner engraving of laser.
In another design, can in first electrode layer or in the second electrode lay, form the local structure (or a plurality of local structure that changes) that changes.
In another design, described method can also have on the substrate or above form first electrode layer; And/or on the second electrode lay or above form cover layer.
In another design, can in substrate, form the local structure (or a plurality of local structure that changes) that changes.
In another design, can in cover layer, form the local structure (or a plurality of local structure that changes) that changes.
In another design, described method can also have on the substrate or above form optically transparent intermediate layer (described intermediate layer is forming one or more local translucent intermediate layers of optics that become when changing structure in case of necessity), wherein (or the translucent intermediate layer of optics) in case of necessity goes up or the top forms first electrode layer in optically transparent intermediate layer; And/or on the second electrode lay or above form encapsulated layer.
Term " translucent layer " can be understood as in different embodiment, layer for light, for example for the light that is produced by opto-electronic device of for example one or more wave-length coverages, for example be transparent for the light in the wavelength of visible light scope (for example, at least in the subregion of the wave-length coverage of 380nm to 780nm).For example term " translucent layer " can be understood as in different embodiment, basically coupling be input to the also coupling output from structure (for example layer) of whole light quantities in the structure (for example layer).
Term " transparent layer " can be understood as in different embodiment, layer is for only transparent (for example at least in the subregion of the wave-length coverage of 380nm to 780nm), wherein coupling be input in the structure (for example layer) light basically under the situation that does not have the conversion of scattering or light also from structure (for example layer) coupling export.
In another design, can in optically transparent intermediate layer, form the local structure (or a plurality of local structure that changes) that changes, this optically transparent intermediate layer is become the translucent intermediate layer of optics.
In another design, can in encapsulated layer, form the local structure (or a plurality of local structure that changes) that changes.
In another design, wherein be formed with the local layer that changes structure (or a plurality of local structure that changes) and can form the layer thickness with at least 1 μ m.
In different designs, also can form the local structure (or a plurality of local structure that changes) that changes in the boundary face of two layers of opto-electronic device.In this design, the total layer thickness on the boundary face of described two layers can be at least 1 μ m, and the local structure (or a plurality of local structure that changes) that changes should be formed on the boundary face of described two layers.
In another design, the local structure (or a plurality of local structure that changes) that changes can form the size that has in inferior micrometer range.
Form in the design with the size in inferior micrometer range in a plurality of local structures that change, local change structure can with acyclic, in other words at random pattern forms, and that is to say the order that does not have rule.
In another design, local change structure (or a plurality of local structure that changes) can form has at least one micron size.
Form in the design of the size with at least one micron in a plurality of local structures that change, local change structure can with rule, for example periodic pattern forms.
In another design, local certainty structure (for example optical lens structure) can form (a plurality of) local structure that changes.
In different embodiment, provide opto-electronic device.Opto-electronic device can have first electrode layer; On first electrode layer or above the organic function layer structure; With on the organic function layer structure or above the second electrode lay; Wherein at least one of the layer of opto-electronic device changes structure in the part that at least one default position has the material of corresponding layer.
In a design, can in first electrode layer or the second electrode lay, form the local structure that changes.
In another design, opto-electronic device can also have substrate, and wherein first electrode layer is arranged on the substrate or the top; And/or have on the second electrode lay or above cover layer.
In another design, can in substrate and/or in cover layer, form the local structure that changes.
In another design, opto-electronic device can also have on the substrate or above optically transparent intermediate layer (or the translucent intermediate layer of optics), wherein first electrode layer is arranged on that go up in optically transparent intermediate layer (or the translucent intermediate layer of optics) or the top; And/or have on the second electrode lay or above encapsulated layer.
In another design, can in optically transparent intermediate layer (or the translucent intermediate layer of optics), form the local structure (or a plurality of local structure that changes) that changes.
In another design, can in encapsulated layer, form the local structure (or a plurality of local structure that changes) that changes.
In another design, has the layer thickness that the local layer that changes structure (or a plurality of local structure that changes) can have at least 1 μ m.
In different designs, also can form the local structure (or a plurality of local structure that changes) that changes in the edge surface of two layers of opto-electronic device.In this design, the summation of layer thickness that can described two layers can be at least 1 μ m, should be formed with the local structure (or a plurality of local structure that changes) that changes on the boundary face of described two layers.
In another design, the local structure (or a plurality of local structure that changes) that changes can have the size in the scope of inferior micron.
Form in the design with the size in the scope of inferior micron in a plurality of local structures that change, a plurality of local change structures can with acyclic, in other words at random pattern forms, just form with the order that does not have rule.
In another design, local change structure (or a plurality of local structure that changes) can form has at least one micron size.
Form in the design of the size with at least one micron in a plurality of local structures that change, local change structure can with rule, for example periodic pattern forms.
In another design, local deterministic structure (for example optical lens structure) can form (a plurality of) local structure that changes.
It is pointed out that one or more local structures that change can constitute, make its almost can not by eye-observation to, but however, therefore the still scattering of the part of light in order to improve the coupling output of light.
Description of drawings
Shown in the drawings and the sets forth in detail hereinafter of embodiments of the invention.
Accompanying drawing illustrates:
Fig. 1 illustrates the view of conventional Organic Light Emitting Diode;
Fig. 2 illustrates the Organic Light Emitting Diode according to different embodiment;
Fig. 3 illustrates the Organic Light Emitting Diode according to different embodiment;
Fig. 4 illustrates the Organic Light Emitting Diode according to different embodiment;
Fig. 5 illustrates the Organic Light Emitting Diode according to different embodiment;
Fig. 6 illustrates the Organic Light Emitting Diode according to different embodiment;
Fig. 7 illustrates the Organic Light Emitting Diode according to different embodiment;
Fig. 8 illustrates the Organic Light Emitting Diode according to different embodiment; And
Fig. 9 illustrates flow chart, shown in it for the manufacture of the method according to the opto-electronic device of different embodiment.
Concrete form of implementation
With reference to the accompanying drawings, described accompanying drawing to form the part of described description and can implement concrete form of implementation of the present invention in order illustrating to illustrate in described accompanying drawing in the detailed description hereinafter.In this respect, about the directed service orientation term of described accompanying drawing, for example " top ", " bottom ", " front portion ", " rear portion ", " front ", " back " etc.Because the parts of form of implementation can be positioned in a plurality of different orientations, the direction term is used for explanation and limited never by any way.It being understood that the form of implementation that to use other and can carry out change structure or logic to it, and do not break away from protection scope of the present invention.It being understood that short ofly ad hoc to explain in addition that wherein the feature of the different exemplary form of implementation of Miao Shuing just can make up mutually.Therefore, following detailed can not be understood as restrictive meaning, and protection scope of the present invention limits by appended claim.So long as favourable, identical or similar element just is provided with identical Reference numeral in the accompanying drawings.
In the scope of this specification, term " connection " " connection " and " being coupled " be used for to describe direct with indirect be connected, direct or indirect connection and direct or indirect being coupled.So long as favourable, identical in the drawings or similar element is provided with identical Reference numeral.
In different embodiment, opto-electronic device can constitute Organic Light Emitting Diode (organic light emitting diode, OLED), organic photoelectric diode (organic photodiode, OPD), organic solar batteries (organic solar cell, OSC) or organic transistor, for example OTFT (organic thin film transistor, OTFT).Opto-electronic device can be the part of integrated circuit in different embodiment.In addition, can be provided with a plurality of opto-electronic devices, for example be placed in the same housing.
Fig. 2 illustrates as the Organic Light Emitting Diode that carries into execution a plan 200 according to the opto-electronic device of different embodiment.
The opto-electronic device of the form of Organic Light Emitting Diode 200 can have substrate 202.Substrate 202 for example can with act on electronic component or the layer, for example optoelectronic component load-carrying unit.For example substrate 202 can have glass, quartz and/or semi-conducting material or other materials that are fit to or be made of it arbitrarily.In addition, substrate 202 can have plastic film or have the lamination of one or more layers plastic film or be made of it.Described plastics can have one or more polyolefin (polyethylene (PE) or the polypropylene (PP) that for example have high or low density) or be made of it.In addition, plastics can have polyvinyl chloride (PVC), polystyrene (PS), polyester and/or Merlon (PC), PETG (PET), polyether sulfone (PES) and/or PEN (PEN) or be made of it.In addition, substrate 202 for example can have metal film, for example aluminium film, stainless steel membrane, copper film or composition or the layer heap on it.Substrate 202 can have one or more in the above-mentioned material.That substrate 202 can be configured to is transparent, translucent, part is translucent, partially transparent or opaque.
On the substrate 202 or above can be applied with for example form of first electrode layer 204 of the first electrode 204().The first electrode 204(is also referred to as lower electrode 204 hereinafter) material that can constitute or can conduct electricity by the material that can conduct electricity, for example by metal or transparent conductive oxide (transparent conductive oxide, TCO) or a plurality of layers the layer heap of identical or different metal or multiple metal and/or identical or different TCO constitute.Transparent conductive oxide is material transparent, that can conduct electricity, and for example metal oxide for example is zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO).Remove is ZnO, SnO for example
2Or In
2O
3The binary metal oxygen compound outside, for example be Zn
2SnO
4, CdSnO
3, ZnSnO
3, MgIn
2O
4, GaInO
3, Zn
2In
2O
5Or In
4Sn
3O
12Ternary metal oxygen compound or the mixture of different transparent conductive oxides also belong to the TCO group.In addition, TCO is not forcibly corresponding to the composition of Chemical Measurement and can be that p mixes or n mixes.First electrode 204 can constitute anode, namely constitutes the material that the hole is injected.
In different embodiment, first electrode layer 204 can be made of the layer heap of metal level combination on tco layer or opposite.An example is the silver layer (Ag on the ITO) that is applied on the indium tin oxide layer (ITO).In different embodiment, first electrode layer 204 can have the metal alloy (for example AgMg alloy) of metal (for example Ag, Pt, Au, Mg) or described material.In different embodiment, first electrode layer 204 can have AlZnO or similar material.
In different embodiment, first electrode 204 can have metal, and described metal for example can be used as cathode material, i.e. the material that injects as electronics.In addition, in different embodiment, for example compound, composition or the alloy of Al, Ba, In, Ag, Au, Mg, Ca or Li and these materials can be made as cathode material.
For the situation that opto-electronic device 200 is designed to the bottom emission body, the first electrode 204(is first metal electrode 204 especially) for example have the layer thickness that is less than or equal to about 25nm, for example be less than or equal to the layer thickness of about 20nm, for example be less than or equal to the layer thickness of about 18nm.In addition, first electrode 204 for example can have layer thickness more than or equal to about 10nm, for example more than or equal to the about layer thickness of 15nm.In different embodiment, first electrode 204 can have the layer thickness of about 10nm to the about 25nm scope, for example approximately layer thickness of 10nm to the about 18nm scope, the about layer thickness of 15nm to the about 18nm scope for example.
For the situation that opto-electronic device 200 is designed to top emitters, therefore first electrode 204 for example can have layer thickness more than or equal to about 40nm, for example more than or equal to the about layer thickness of 50nm.
In addition, opto-electronic device 200 can have organic function layer structure 206, and described organic function layer structure has been applied to or has been applied on first electrode 204 or the top.
Organic function layer structure 206 can comprise the one or more emission layers 208 that for example have emitter fluorescence and/or phosphorescence, and one or more hole-conductive layer 210.
The example that can be used for the emitter material of (a plurality of) emission layer 208 in according to the opto-electronic device of different embodiment comprises organic or organometallic compound, for example the derivative of poly-fluorenes, polythiophene and polyphenyl (for example, 2-or 2, the p-phenylene vinylene that 5-replaces) and metal complex, iridium complex for example, as two (3,5-, two fluoro-2-(2-pyridine radicals) phenyl-(2-carboxyl pyridine bases) of the FIrPic(of the look phosphorescence that turns blue-close iridium III), the Ir (ppy) of green-emitting phosphorescence
3The Ru (dtb-bpy) of (three (2-phenylpyridines) close iridium III), rubescent look phosphorescence
3* 2 (PF
6) (three [4,4 '-two-four-butyl-(2,2 ') pyridine-two] close ruthenium (III) complex compound) and the DPAVBi(4 of the look fluorescence that turns blue, 4-two [4-(two-right-toluidino) styryl] biphenyl), the TTPA(9 of green-emitting fluorescence, the DCM2(4-methylene dicyanoethyl of two [N, N-two-(right-tolyl)-amino] anthracenes of 10-and rubescent look fluorescence)-and 2-methyl-6-julolidine groups-9-thiazolinyl-tetrahydrochysene-pyrans) as the emitter of non-polymer.The emitter of these non-polymers for example can deposit by means of hot evaporation.In addition, can use polymeric emitters, described polymeric emitters especially can deposit by means of wet chemistry method, for example spin coating.
Emitter material can be embedded in the basis material in the mode that is fit to.
The emitter material of (a plurality of) emission layer 208 of opto-electronic device 200 for example can be chosen to, and makes opto-electronic device 200 launch white lights.(a plurality of) emission layer 208 can have the multiple emitter material of emission different colours (for example blue and yellow or blue, green and red), as an alternative, (a plurality of) emission layer 208 also can be made of a plurality of sublayers, and the emission layer 208 of the emission layer 208 of the emission layer 208 of the look fluorescence that for example turns blue or the look phosphorescence that turns blue, the emission layer 208 of green-emitting phosphorescence and rubescent look phosphorescence constitutes.By mixing different colors, can cause the light that emission has the color white impression.As an alternative, also can be made as, the transition material that absorbs primary radiation at least in part and launch the secondary radiation of another wavelength is set in the light path of the primary emission by these layers generation, makes by (also not being white) primary radiation by the color impression that draws white is made up in primary radiation and secondary radiation.
Organic function layer structure 206 can have one or more functional layers usually.Described one or more functional layer can have organic polymer, organically oligomer, organically monomer, the little molecule (" small molecules ") of organic non-polymer or the combination of these materials.Organic function layer structure 206 for example can have one or more functional layers, described one or more functional layer is configured to hole transport layer 210, makes the effective hole that for example can be implemented under the situation of OLED in electroluminescence layer or the electroluminescence zone inject.For example can use polyaniline or the polyethylene dioxythiophene of tertiary amine, carbazole derivates, conduction as the material that is used for hole transmission layer 210.In different embodiment, one or more functional layers can be configured to electroluminescence layer.
In different embodiment, for example hole transport layer 210 can be applied, for example is deposited on first electrode 204 or the top, and emission layer 208 can apply, for example be deposited on the hole transmission layer 210 or top.
Opto-electronic device 200 can have other organic function layers for the functional and then efficient of improving opto-electronic device 200 further usually.
Opto-electronic device 200 can be configured to " bottom emission body " and/or " top emitters ".
In different embodiment, organic function layer structure 206 can have the layer thickness of maximum about 1.5 μ m, for example layer thickness, for example layer thickness, for example layer thickness, for example layer thickness, for example layer thickness, the maximum approximately layer thickness of 300nm for example of maximum approximately 400nm of maximum approximately 500nm of maximum approximately 800nm of maximum about 1 μ m of maximum about 1.2 μ m.In different embodiment, organic function layer structure 206 for example can have a plurality of directly heaps of stacked OLED, and wherein each OLED for example can have the layer thickness of maximum about 1.5 μ m, for example layer thickness, for example layer thickness, for example layer thickness, for example layer thickness, for example layer thickness, the maximum approximately layer thickness of 300nm for example of maximum approximately 400nm of maximum approximately 500nm of maximum approximately 800nm of maximum about 1 μ m of maximum about 1.2 μ m.In different embodiment, organic function layer structure 206 for example can have the heap of the direct stacked OLED of three or four, and for example organic function layer structure 206 can have the layer thickness of maximum about 3 μ m in this case.
On the organic function layer structure 206 or above can be applied with the second electrode 212(for example with the form of the second electrode lay 212).
In different embodiment, second electrode 212 can have with first electrode, 204 identical materials or by it and constitutes, and wherein metal especially is fit in different embodiment.
In different embodiment, second electrode 212 for example can have the layer thickness that is less than or equal to about 50nm, for example be less than or equal to the layer thickness of about 45nm, for example be less than or equal to the layer thickness of about 40nm, for example be less than or equal to the layer thickness of about 35nm, for example be less than or equal to the layer thickness of about 30nm, for example be less than or equal to the layer thickness of about 25nm, for example be less than or equal to the layer thickness of about 20nm, for example be less than or equal to the layer thickness of about 15nm, for example be less than or equal to the layer thickness of about 10nm.In different embodiment, second electrode 212 can have bigger layer thickness arbitrarily.
As shown in figure 2, for coupling output substrate mode wave within substrate (for example glass substrate) 202, be provided with the part change structure of the material of substrate 202 in (perhaps on a plurality of default positions) (difference) at least one default position.In different embodiment, (a plurality of) local structure that changes is with the form formation of engraving, and for example the form with the substrate interior engraving forms.In different embodiment, (a plurality of) local structure that changes is with the form formation of aperiodic structure.That described (a plurality of) part changes is that the shape structural scattering is for example produced by emission layer 208, be directed into light in the substrate 202.The advantage of described design is that the surface of substrate 202 (for example glass surface) keeps its minute surface impression as before.Thus, can additionally improve " off state performance " (" Off-State-Appearance ") of opto-electronic device 202.One or more local change on the position that structures can preset within substrate 202 or that limit in advance (among the embodiment that is described below in case of necessity in one or more other layers of opto-electronic device) form, make form expectation, made diffusing structure (in corresponding layer the material not owing to the scrambling of uncertainty and the scrambling do not expected).One or more local structures that change can all have identical size or different sizes.In one or more layer a plurality of local settings that change structures can be at random, in other words acyclic.As an alternative, the local structure that changes can or arrange with default (for example periodic) pattern with default (for example periodic) pattern setting.In addition, can in one or more layers, form local deterministic structure, for example lens arrangement by means of a plurality of local structures that change.
If local change structure has the size in the inferior micrometer range, in different embodiment, be made as so, the part is changed structure with acyclic pattern setting.If the local structure that changes has the size of at least 1 μ m, in different embodiment, be made as so, the part is changed structure with periodic pattern setting.Yet it is pointed out that also to change the situation that structure has the size of at least 1 μ m for the part that it is acyclic that local change structure can be arranged to.
Organic Light Emitting Diode 200 can constitute or constitute bottom emission body or top and bottom emission body.
Fig. 3 illustrates as the Organic Light Emitting Diode that carries into execution a plan 300 according to the opto-electronic device of different embodiment.
Be different from is in the described Organic Light Emitting Diode 300 according to Fig. 3, not to be provided with inner engraving in substrate 202 according to the Organic Light Emitting Diode 200 of Fig. 2.Organic Light Emitting Diode 300 constitutes top emitters.In addition, Organic Light Emitting Diode 300 has cover layer 302, and described cover layer is for example made by the material that glass or other are fit to, for example by a kind of the making in the following material: quartz, semi-conducting material, plastic film or have the lamination of one or more layers plastic film.Plastics can have one or more polyolefin (for example polypropylene (PP) or have the polyethylene (PE) of high or low density) or be made of it.In addition, described plastics can have polyvinyl chloride (PVC), polystyrene (PS), polyester and/or Merlon (PC), PETG (PET), polyether sulfone (PES) and/or PEN (PEN) or be formed by it.Cover layer 302 can be configured to translucent, for example transparent, part is translucent, for example partially transparent.
In according to the Organic Light Emitting Diode 300 of Fig. 3, be located in the cover layer 302 one or more local structures that change and in that scattering center that forms as exemplarily describe in conjunction with Fig. 2 hereinbefore.Therefore, in the Organic Light Emitting Diode 300 of top side emission, for example by making for example cover glass of cover layer 302() have that one or more (for example with the form of inside engraving) are local to be changed structure and can improve optical coupling output.
In different embodiment, can be made as in addition, one or more local structures that change are introduced for example cover glass of cover layer 302(in case of necessity) in and/or in the substrate 202, also in transparent Organic Light Emitting Diode, can realize the improvement of optical coupling output thus, and not have to influence doughtily corresponding layer transparency of Organic Light Emitting Diode.
Fig. 4 illustrates as the Organic Light Emitting Diode that carries into execution a plan 400 according to the opto-electronic device of different embodiment.
Constitute top and bottom emission body and not only in substrate 202 but also in cover layer 302, have the one or more local structures of describing in conjunction with Fig. 2 hereinbefore as exemplarily 402,404 that change respectively according to the Organic Light Emitting Diode 400 of Fig. 4.
In order (for example to be directed to Organic Light Emitting Diode; Organic Light Emitting Diode 500) the mode wave coupling output in the organic layer; substrate 202 and/or cover layer 302 are provided with; for example inside is carved with that one or more local change structures perhaps can be inadequate; because owing to usually (for example having the refractive index of about n=1.8 to the scope of about n=2 based on what employed material existed having the refractive index of about n=1.7 to the scope of about n=2; for example have the refractive index of about n=1.7 to the scope of about n=1.8) organic layer (for example layer of organic function layer structure 206) (for example comprise first electrode 204; anode for example) and the substrate 202(of refractive index that for example has a n=1.5 for the situation of glass substrate) between the refractive index sudden change, at least part of light does not arrive for example glass substrate 202 of substrate 202() in.Described aspect can change structure by means of the part and tackle in a different manner.
Therefore, as seeing Fig. 5 as the Organic Light Emitting Diode 500(that carries into execution a plan according to the opto-electronic device of different embodiment) shown in, for example, the heap 502 that can (for example be made) layer 502 of transparent, high index of refraction or a plurality of layers transparent, high index of refraction by silicon nitride and/or titanium oxide is located between substrate 202 and first electrode 204, for example anode 204.One or more local change structures can be located in the layer 502 transparent, high index of refraction and (perhaps be located in the heap 502 of a plurality of layers transparent, high index of refraction).For example, transparent, the layer 502(of high index of refraction or the heap 502 of a plurality of layers transparent, high index of refraction) can be carved by inside or inner engraving.The light that comes from the layer of organic function layer structure 206 can (or in heap 502 of a plurality of layers transparent, high index of refraction) scattering in the layer 502 of transparent, high index of refraction, and output described light thus can be coupled.At this, for example also engraving (normally one or more local change structure) can be located on the boundary face between the layer 502 of first electrode (anode), 204/ high reflectance or be located on the boundary face between the layer 502 of substrate 202/ high reflectance.In both cases, scattered light equally all.
In different embodiment, layer 502 transparent, high index of refraction can have in the scope of about 1 μ m to 50 μ m, for example about 5 μ m to the scope of about 40 μ m, the layer thickness of about 10 μ m to the scope of about 25 μ m for example.
Therefore, in different embodiment, identical with Organic Light Emitting Diode 200 according to Fig. 2 basically according to the Organic Light Emitting Diode 500 of Fig. 5, only between substrate 202 and first electrode 204, have one or more additional layers, just for example have the heap 502 of layer 502(transparent, high index of refraction or a plurality of layers transparent, high index of refraction).In addition, in this case, substrate needn't (but alternatively can) be provided with and one or morely locally changes structures, but is provided with the heap 502 of layer 502(transparent, high index of refraction or a plurality of layers transparent, high index of refraction) (in Fig. 5, being illustrated by Reference numeral 504).
If layer 502 transparent, high index of refraction is not expected, first electrode 204(anode for example so for example) and the boundary face 602 between the substrate 202 can be provided with or be provided with one or more local structures (in the Organic Light Emitting Diode 600 in Fig. 6 with Reference numeral 604 expressions) that change, for example be provided with inner engraving, for example be provided with the inner engraving of laser, in order to produce light scattering in described boundary face 602.Therefore, intuitively, for example the transition part between substrate 202 and the transparent anode 204 is carved by inside, in order to make boundary face 602 structurings between high index of refraction (for example anode 204) and low-refraction (for example substrate 202), and therefore can be at that scattered light.
Therefore, in different embodiment, identical with Organic Light Emitting Diode 200 according to Fig. 2 basically according to the Organic Light Emitting Diode 600 of Fig. 6, only at first electrode 204(anode for example) and substrate 202 between boundary face 602 have one or more local structures that change.It is pointed out that in carrying into execution a plan according in the Organic Light Emitting Diode 600 of Fig. 6 another, also can in substrate 202, be provided with one or more local structures that change.
Fig. 7 also illustrates the Organic Light Emitting Diode 700 according to different embodiment.
In different embodiment, can be made as, under the situation of the Organic Light Emitting Diode 700 of top-emission or transparent Organic Light Emitting Diode, (for example having the refractive index of about n=1.7 to the scope of about n=2 and (for example having the refractive index of about n=1.8 to the scope of about n=2 by the material of high index of refraction, for example have the refractive index of about n=1.7 to the scope of about n=1.8) material) thin-film encapsulation layer 702 between therefore transparent second electrode (for example negative electrode) made is provided with enough layer thicknesses (for example at least 1 μ m) and described thin-film encapsulation layer 702 and is provided with one or more local structures (in Fig. 7 with Reference numeral 704 expressions) that change.In different embodiment, also can be provided with (high index of refraction as far as possible) layer that for example is applied on the thin-film encapsulation layer 702.
In different embodiment, will explain " encapsulation " or " packaging part " for example is understood as, the obstruct with respect to moisture and/or oxygen is provided, make the organic function layer structure to be penetrated by these materials.
Therefore, substantially the same with the Organic Light Emitting Diode 400 according to Fig. 4 according to the Organic Light Emitting Diode 700 of Fig. 7 in different embodiment, wherein one or more local structures that change only are included in or are also contained in the thin-film encapsulation layer 702.
In different embodiment, thin-film encapsulation layer 702 can have in the following material one or more or made by it: the heap of the layer of material or mixtures of material or material, for example SiO
2Si
3N
4These materials of SiON(for example deposit by means of CVD method (chemical vapour deposition technique)); Al
2O
3ZrO
2TiO
2Ta
2O
5SiO
2ZnO; And/or HfO
2(these materials for example deposit by means of ALD method (atomic layer deposition method)); The perhaps combination of these materials.
Fig. 8 also illustrates the Organic Light Emitting Diode 800 according to different embodiment.
Can be made as in different embodiment, (transparent in this case) first electrode 204 is provided with one or more local structures (representing with Reference numeral 802) that change in Fig. 8.
In different embodiment, also can be in Organic Light Emitting Diode, in opto-electronic device, be provided with the combination of the layer of a plurality of engravings usually.Also can be made as, one or more layer is only with the small size engraving, in order to improve the transparency that obtains opto-electronic device under the situation of optical coupling output at the same time.
For example, technology of (using under the situation of one or more lasers) inner engraving can realize: write in layer or constitute arbitrary structures.In different embodiment, this for example especially can be the layer of scattering, as an alternative or additionally, also can write or constitute the structure of the three-dimensional that can cause lens effect within one or more layers of opto-electronic device.Also possiblely thus be to set up and be used for the final special effects of using, for example bright luminous literal in the luminescent image of Organic Light Emitting Diode.
Because for example all optics own are translucent, for example material transparent can be made as for laser inside engraving, substrate 202 or cover layer 302 needn't necessarily be made by glass.Equally also possiblely be, described substrate for example translucent by plastics or other, for example material transparent is made or have these materials.
Therefore, in different embodiment, be made as, with the mode wave of substrate mode wave and/or other layers, for example mode wave of first electrode (for example ITO mode wave) and/or organic substance, the mode wave coupling output of organic layer structure just; These mode waves are also referred to as ITO/ organic substance mode wave.
In different embodiment, engraving within several nm (yet should not damage the boundary layer, except making the structurized embodiment of boundary face wittingly) can be formed near the boundary face of layer.
Fig. 9 illustrates flow chart 900, shown in it for the manufacture of the method according to the opto-electronic device of different embodiment.
In different embodiment, can according to described method in 902, the organic function layer structure is formed on first electrode layer or above.In addition, can be in 904 the second electrode lay be formed on the organic function layer structure or above.Finally, the part that can be in 906 forms the material of corresponding layer at least one of the layer of opto-electronic device at least one default position changes structure.
The local structure that changes can form by means of the local damage to the material structure of corresponding layer, for example by means of heating material partly, makes for example irreversible damage to occur that described damage forms light scattering structure in layer.To this, for example can use the technology of the inner engraving of laser.
In the scope of the inner engraving of laser, in different embodiment, can use the laser that produces and launch the light of certain wavelength, layer to be carved in described wavelength is transparent.
Claims (14)
1. for the manufacture of the method (900) of opto-electronic device (200), wherein said method comprises:
Go up or top formation (902) organic function layer structure (206) at first electrode layer (204);
Go up or top formation (904) the second electrode lay (212) in described organic function layer structure (206); And
Form the part change structure (214) of the material of (906) corresponding described layer in the layer of described opto-electronic device (200) at least one at least one predeterminated position.
2. method according to claim 1 (900),
Wherein at least one predeterminated position, form the local structure (214) that changes by means of the material that heats corresponding described layer partly.
3. method according to claim 2 (900),
Wherein use the localized heating that laser carries out the material of corresponding described layer, be preferably so that the inner engraving of corresponding described layer execution laser.
4. according to the described method of one of claim 1 to 3 (900),
Wherein form the local structure (802) that changes at described first electrode layer (204) or in described the second electrode lay (212).
5. according to the described method of one of claim 1 to 4 (900), described method also has:
Go up or the top forms described first electrode layer (204) at substrate (202); And/or go up or the top forms cover layer (302) at described the second electrode lay (212);
Wherein preferably in described substrate (202) and/or in described cover layer (302), form the local structure (214,304) that changes.
6. method according to claim 5 (900), described method also has:
Wherein go up in the translucent intermediate layer of described optics (502) in the last or formation translucent intermediate layer of optics (502), top at described substrate (202) or the top forms described first electrode layer (204); And/or go up or the top forms encapsulated layer (702) at described the second electrode lay (212);
Wherein preferably in the translucent intermediate layer of described optics (502) and/or in described encapsulated layer (702), form the local structure (504,704) that changes.
7. according to the described method of one of claim 1 to 6 (900), wherein be formed with the local layer that changes structure and form the layer thickness with at least 1 μ m.
8. according to the described method of one of claim 1 to 7 (900),
The wherein said local structure that changes forms the size that has in the scope of inferior micron; Perhaps
Wherein said local change structure forms has at least one micron size.
9. opto-electronic device (200) has:
First electrode layer (204);
Go up or the organic function layer structure (206) of top at described first electrode layer (204); With
Go up or the second electrode lay (212) of top in described organic function layer structure (206);
In the layer of wherein said opto-electronic device (200) at least one has the material of corresponding described layer at least one predeterminated position part changes structure (214).
10. opto-electronic device according to claim 9 (200) wherein forms the local structure (802) that changes in described first electrode layer (204) or in described the second electrode lay (212).
11. according to claim 9 or 10 described opto-electronic devices (200),
Also have substrate (202), wherein said first electrode layer (204) is arranged on described substrate (202) and goes up or the top; And/or the cover layer (302) of or top last at described the second electrode lay (212);
Wherein preferably in described substrate (202) and/or in described cover layer (302), form the local structure (214,304) that changes.
12. according to the described opto-electronic device of one of claim 9 to 11 (200), also have:
Go up or the translucent intermediate layer of optics (502) of top at described substrate (202), wherein said first electrode layer (204) is arranged on the translucent intermediate layer of described optics (502) and goes up or the top; And/or the encapsulated layer (702) of or top last at described the second electrode lay (212);
Wherein preferably in the translucent intermediate layer of described optics (502) and/or in described encapsulated layer (702), form the local structure (504,704) that changes.
13. according to the described opto-electronic device of one of claim 9 to 12 (200),
The layer that wherein has local change structure has the layer thickness of at least 1 μ m.
14. according to the described opto-electronic device of one of claim 9 to 13 (200),
Wherein said local change structure has the size in inferior micrometer range; Perhaps
The wherein said local structure that changes has at least one micron size.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010063511.1 | 2010-12-20 | ||
| DE102010063511A DE102010063511A1 (en) | 2010-12-20 | 2010-12-20 | Method for producing an optoelectronic component and optoelectronic component |
| PCT/EP2011/072710 WO2012084630A1 (en) | 2010-12-20 | 2011-12-14 | Method for producing an optoelectronic component and optoelectronic component |
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| CN103262271A true CN103262271A (en) | 2013-08-21 |
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| CN2011800615231A Pending CN103262271A (en) | 2010-12-20 | 2011-12-14 | Method for producing optoelectronic component and optoelectronic component |
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| US (1) | US20130270542A1 (en) |
| EP (1) | EP2656403A1 (en) |
| JP (1) | JP2014503966A (en) |
| KR (1) | KR20130119462A (en) |
| CN (1) | CN103262271A (en) |
| DE (1) | DE102010063511A1 (en) |
| WO (1) | WO2012084630A1 (en) |
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| DE102012109209B4 (en) | 2012-09-28 | 2017-05-11 | Osram Oled Gmbh | Method for producing an optoelectronic component and optoelectronic component |
| KR102013316B1 (en) * | 2012-11-20 | 2019-08-23 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus and the manufacturing method thereof |
| US9508908B2 (en) * | 2013-05-15 | 2016-11-29 | Koninklijke Philips N.V. | LED with scattering features in substrate |
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| Publication number | Publication date |
|---|---|
| DE102010063511A1 (en) | 2012-06-21 |
| JP2014503966A (en) | 2014-02-13 |
| KR20130119462A (en) | 2013-10-31 |
| WO2012084630A1 (en) | 2012-06-28 |
| US20130270542A1 (en) | 2013-10-17 |
| EP2656403A1 (en) | 2013-10-30 |
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