CN103288040A - Tunable MEMS device and method of making a tunable MEMS device - Google Patents
Tunable MEMS device and method of making a tunable MEMS device Download PDFInfo
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- CN103288040A CN103288040A CN201310064505XA CN201310064505A CN103288040A CN 103288040 A CN103288040 A CN 103288040A CN 201310064505X A CN201310064505X A CN 201310064505XA CN 201310064505 A CN201310064505 A CN 201310064505A CN 103288040 A CN103288040 A CN 103288040A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims description 122
- 239000012528 membrane Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000003989 dielectric material Substances 0.000 description 12
- 238000002955 isolation Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000013265 extended release Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
- H04R1/04—Structural association of microphone with electric circuitry therefor
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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Abstract
A tunable MEMS device and a method of manufacturing a tunable MEMS device are disclosed. In accordance with an embodiment of the present invention, a semiconductor device comprises a substrate, a moveable electrode and a counter electrode. The moveable electrode or the counter electrode comprises a first region and a second region, wherein the first region is isolated from the second region, wherein the first region is configured to be tuned, wherein the second region is configured to provide a sensing signal or control a system, and wherein the moveable electrode and the counter electrode are mechanically connected to the substrate.
Description
Technical field
The present invention relates generally to the manufacture method of tunable MEMS device and tunable MEMS device.
Background technology
A kind of MEMS(MEMS) microphone comprises the presser sensor vibrating reed that is arranged in the silicon.The MEMS microphone is integrated in the single chip with preamplifier sometimes.The MEMS microphone also can comprise makes its analog-digital converter that becomes digital MEMS microphone (ADC) circuit.
Summary of the invention
According to the embodiment of the present invention, semiconductor devices comprises substrate, travelling electrode and to electrode.Maybe this comprises first area and second area to electrode to this travelling electrode, wherein this first area and this second area are isolated, wherein this first area is configured to by tuning, wherein this second area is configured to provide sensing signal or control system, and this travelling electrode and electrode is mechanically connected to this substrate wherein.
According to the embodiment of the present invention, the MEMS structure comprises substrate, travelling electrode and to electrode.This comprises first pair of electrode zone and second pair of electrode zone to electrode, wherein, and the first pair of electrode zone and the second anti-motor zone isolation, and wherein this is mechanically connected to this substrate to electrode and this travelling electrode.
According to the embodiment of the present invention, the MEMS structure comprises semiconductor substrate, back plate electrode and piles up barrier film, and wherein this piles up barrier film and this backboard is mechanically connected on this semiconductor substrate.This piles up barrier film and comprises first barrier film and second barrier film.
Description of drawings
Now by reference to the accompanying drawings and with reference to following description with understand better the present invention with and advantage, wherein,
Fig. 1 a illustrates the viewgraph of cross-section of MEMS structure;
Fig. 1 b illustrates the top view of MEMS structure;
Fig. 2 a illustrates the viewgraph of cross-section of the embodiment of MEMS structure;
Fig. 2 b illustrates the top view of the embodiment of backboard;
Fig. 2 c illustrates the capacitance network of equal value of MEMS structure;
Fig. 3 a illustrates the viewgraph of cross-section of the embodiment of MEMS structure;
Fig. 3 b illustrates the top view of the embodiment of displaceable element;
Fig. 4 a illustrates the viewgraph of cross-section of the embodiment of MEMS structure;
Fig. 4 b illustrates the viewgraph of cross-section of the embodiment of MEMS structure;
Fig. 5 a illustrates the viewgraph of cross-section of the embodiment of MEMS structure;
Fig. 5 b illustrates the top view of the embodiment of marginal texture; And
Fig. 6 a to Fig. 6 c illustrates the embodiment of the manufacture method of MEMS structure.
The specific embodiment
Be discussed in detail manufacturing and the use of present preferred embodiment below.But, be to be appreciated that to the invention provides many practicable creationary concepts that it can be embodied in the various linguistic context.The specific embodiment of discussing only is the example of making and use specific mode of the present invention, does not limit the scope of the invention.
In specific context, will the present invention be described with regard to embodiment, i.e. sensor or microphone.But the present invention also can be applicable among other MEMS such as RF MEMS, accelerometer and motor etc.
Fig. 1 a and Fig. 1 b illustrate the viewgraph of cross-section of MEMS structure 100.The air gap 150 between MEMS structure 100 involving vibrations films or barrier film 130, backboard 160 and barrier film 130 and the backboard 160.Barrier film or septum electrode 130 are configured to respect to backboard or fixing electrode 160 is moved or deflection.This deflection causes the barrier film 130 that can measure and the electric capacity between the backboard 160 to change.
Barrier film 130 and backboard 160 are connected to substrate 110 along their circumference.Barrier film 130 is connected to substrate by first pad 120.Selectively, barrier film 130 can be arranged in the principal plane of substrate 110 and not have first pad 120.Second pad 140 is arranged between them along the circumference of barrier film 130 and backboard 160.Barrier film 130 and backboard 160 can comprise circular or square.Selectively, barrier film 130 and backboard 160 can comprise the geometry of any appropriate.Back volume 180 is arranged between MEMS structure 100 and the substrate 190, and wherein substrate 190 can comprise printed circuit board (PCB) (PCB).
First pad 120 and second pad 140 can comprise dielectric or insulating materials, for example silica, silicon nitride, such as high dielectric constant material or its composition of silicon oxynitride.
Barrier film 130 and backboard 160 can comprise the conductive material such as polysilicon, DOPOS doped polycrystalline silicon or metal.On backboard 160, can punch to reduce damping.
Barrier film 130 has two different zones.Barrier film 130 is connected to perimeter or the zone, edge (edge) of semiconductor substrate 110.In this zone, barrier film 130 mechanically is fixed to the support edge of semiconductor substrate 110 along not moving on (rim) structure or the pad 120.At interior zone, barrier film 130 is transportable or can deflection.The perimeter of barrier film 130 is inoperative to the sensing signal that the interior zone by barrier film 130 produces, but increases parasitic capacitance to this signal.For to electrode or backboard 160, because the deflection of barrier film 130, the interior zone of barrier film 130 can produce signal.Because barrier film is clamped at edge (interior zone of the barrier film 130 and transitional region between the perimeter), so barrier film 130 near the zone at this edge with less amplitude peak deflection, towards the zone at the center of the interior zone of barrier film 130 with bigger amplitude peak deflection.Therefore, the center of the interior zone of barrier film 130 is maximum to the susceptibility contribution.It will be favourable only using about 80% barrier film interior zone to produce sensing signal.
Between barrier film 130 and the backboard 160 spacing is arranged, so the mechanical sensitivity degree produces by mechanical constraint, after the manufacturing process of finishing the MEMS structure, can not change.Barrier film 130 and backboard 160 along supporting construction (barrier film 130 and backboard 160 along pad 120,140 overlapping) form direct capacitance.In order to reduce direct capacitance, barrier film 130 and backboard 160 can only be overlapped.For example, as shown in Fig. 1 b, backboard 160 can have the equally spaced depression that runs through backboard 160.In order further to minimize the influence of direct capacitance, can provide along the supporting construction of semiconductor substrate 110 or the protection structure of pad 120.
Problem along the parasitic capacitance of the supporting construction between barrier film and the backboard is, because all sizes overlapping and spacing from the backboard to the barrier film are as described fixed, cause the SNR of manufacturing process definition by the MEMS structure, so this parasitic capacitance is immutable.
Therefore, there is a need in the art for the MEMS structure that reduces parasitic capacitance significantly and be configured to after the making of finishing the MEMS structure, change the mechanical sensitivity degree.
An embodiment of the invention provide cutting apart of back plate electrode and/or septum electrode.This back plate electrode and/or septum electrode comprise and are configured to provide first electrode of transducing signal or control system and are configured to by the second tuning electrode.Sensing region and tuning zone laterally keep apart mutually in an embodiment of the invention.
Advantage be because parasitic capacitance towards the central cross ground of barrier film away from supporting construction, so the parasitic capacitance of MEMS structure reduces significantly.In traditional configuration, parasitic capacitance is by the perimeter of barrier film and the overlapping generation of backboard.Because electric capacity and circumference and radially overlapping product are proportional, so this is overlapping relatively large.Parasitic capacitance can by overlapping region (radially overlapping=10 μ m to 20 μ m) multiply by pad 140 dielectric constant and calculate divided by this product with the vertical range (vertical range of pad=2 μ m) of pad 140.
Further advantage is can tuning identical MEMS structure, for example, utilizes identical
The MEMS structure can provide different mechanical sensitivity degree and different SNRs at different application.
Usually, a target of design and manufacturing microphone is to obtain the highest signal to noise ratio (snr) as much as possible.In addition, when measured changes in capacitance big as far as possible and when parasitic capacitance as far as possible hour, can realize this goal.For whole capacitor, the spurious portion of electric capacity is more big, and SNR is more little.
Fig. 2 a and 2b illustrate cross-sectional view and the top view of the embodiment of MEMS structure 200, and structure 200 has the backboard of cutting apart 250.MEMS structure 200 comprises semiconductor substrate 210, barrier film 230 and backboard 250.Barrier film 230 and substrate 210 are separated by first pad 220, and backboard 250 and barrier film 230 are separated by second pad 240.The material of the element of MEMS structure 200 is identical with above-mentioned Fig. 1 a and Fig. 1 b description.
The backboard of cutting apart comprises the first region territory 257 and the second electrode region 255.The second electrode region 255 can be positioned at the first region territory 257 wholly or in part, and perhaps the first region territory 257 can be wholly or in part around the second electrode region 255.The first region territory 257 can be the outer electrode zone, and this second electrode region 255 can be the internal electrode zone.The first region territory 257 can comprise circle ring area, and the second electrode region 255 can comprise border circular areas.Selectively, the first region territory 257 can comprise a plurality of electrodes, and the second electrode region 255 also can comprise a plurality of electrodes.For example, the first region territory 257 can comprise a plurality of annulus.
The first region territory 257 and the second electrode region 255 can be arranged on isolates on the supporter 254.This isolation supporter 254 can be arranged on the whole zone of backboard 250 or only on the subregion of backboard 250.Isolating supporter 254 can be arranged on a side in the face of barrier film 230 and maybe can be arranged on a side back to barrier film 230.Isolate supporter 254 and can comprise silica, silicon nitride, the high dielectric material such as silicon oxynitride, pi or its composition.Can utilize external series gap or isolation channel 253 that the first region territory 257 and the second electrode region 255 are isolated.Isolation channel 253 can be with filling such as silica, silicon nitride or such as the dielectric material of the high dielectric material of silicon oxynitride.In a selectable embodiment, backboard 250 does not comprise isolates supporter 254, and the first region territory 257 is mechanically connected to the second electrode region 255 by the dielectric material of isolation channel 253.
The second electrode region 255 mechanically and electrically is connected to second pad 240.The second electrode region 255 can be included in the connection 256 of the electrical contact in second pad 240, and it forms breach in first electrode.The second electrode region 255 can comprise the connection 256 more than, and a plurality of connections can be kept apart mutually with identical spacing.
The second electrode region 255 is configured to provide sensing signal, and the first region territory 257 is configured to by tuning or driven.The second electrode region 255 is set to the sensing bias voltage, and the first region territory 257 is set to tuning bias voltage.The tuning bias voltage in the first region territory 257 is independent of the sensing bias voltage of the second electrode region 255.
For example, MEMS structure 200 drives tuning by electric capacity.For being lower than pick-up voltage
The voltage of (pull-in voltage), this electric capacity order about approximately 30% air gap distance (between barrier film 230 and the backboard 250) change.Correspondingly, when parasitic capacitance does not change, susceptibility that can tuning MEMS structure.Because this susceptibility and air gap distance are inversely proportional to, so along with the variation of the air gap from 100% to 70%, susceptibility can increase.For example, this susceptibility can increase approximately+3dB.
In one embodiment, the backboard of cutting apart 250 is for square.Identical principle is applicable to this embodiment rather than is applicable to the circular backboard of cutting apart 250.For example, the second electrode region 255 comprises square, and the first region territory comprises the square ring that surrounds except connecting second electrode 255 256.Selectively, backboard 250 comprises the geometry that other are suitable.
In some embodiments, the coupling between backboard 250 and the barrier film 230 has reduced, and therefore, the parasitic capacitance of MEMS structure 200 also reduces.Fig. 2 c illustrates capacitance network and the preamplifier 290 of the equivalence of MEMS structure 200.As from Fig. 2 c as can be seen, capacitor C
Support, C
Tuning, C
ActiveAnd C
AmpAlso therefore stack in parallel.Between the first region territory 257 and the second electrode region 255, introduce the little capacitor C of a series connection
Groove(isolation channel 253) can reduce the parasitic capacitance of MEMS structure 200 to a great extent.Especially, because susceptibility S and C
Active/ (C
Active+ C
Amp+ 1/ (1/ (C
Support+ C
Tuning)+1/C
Groove))) proportional, so little capacitor C
GrooveIntroducing increased the susceptibility of MEMS structure 200.For C
Groove-0, susceptibility S and C
Active/ (C
Active+ C
Amp) proportional.
In an example, little capacitor C
GrooveMultiply by the thickness of layer 257 by the circumferential area of isolation channel 253(electric capacity～253, multiply by the dielectric constant of the dielectric material in the gap of air or 253) provide.Little series capacitance C
GrooveThan other electric capacity C for example
SupportAnd C
TuningLittle several magnitude.Less parasitic capacitance C
GrooveWith C
SupportAnd C
TuningFrom C
ActiveAnd C
AmpMiddle decoupling zero.Correspondingly, reduce whole parasitic capacitance, and realized the signal to noise ratio that s is higher.
In addition, the first region territory 257 can be used in second electrode or sensing region 255 and drives barrier film 230 discretely and independently.By driving the susceptibility that can change MEMS structure 200.For example, two MEMS structures can be tuned to mutually closely cooperate (for example, having approximately identical susceptibility), and perhaps single MEMS structure can be switched between this susceptibility configuration and low sensitivity configuration.
Fig. 3 a and Fig. 3 b illustrate cross-sectional view and the top view of the embodiment of the MEMS structure 300 with barrier film 330 of cutting apart.This MEMS structure 300 comprises substrate 310, barrier film 330 and backboard 350.Barrier film 330 and substrate 310 are separated by first pad 320, and backboard 350 and barrier film 330 are separated by second pad 340.The material of the element of MEMS structure 300 is identical with above-mentioned Fig. 1 a and Fig. 1 b description.
The barrier film of cutting apart comprises first electrode 337 and second electrode 335.Second electrode 335 can be positioned at first electrode 337 wholly or in part or first electrode 337 can be wholly or in part around second electrode 335.This first electrode 337 can comprise circle ring area, and second electrode 335 can comprise border circular areas.Selectively, first electrode 337 can comprise a plurality of electrodes, and second electrode 335 also can comprise a plurality of electrodes.For example, first electrode 337 can comprise a plurality of circular rings.Second electrode 335 is defined as sensing region, and first electrode 337 is defined as tuning or the drive area.The area of the sensing region 335 of barrier film 330 can be greater than tuning regional 337 area.For example, sensing region can comprise about 80% area of diaphragm area 330, and the perimeter can comprise about 20% area.
In embodiment, first electrode 337 and second electrode 335 can be arranged on leptophragmata on supporter 334.This isolation supporter can be arranged on towards backboard 350 sides, maybe can be arranged on back to backboard 350 sides.This leptophragmata can comprise silica, silicon nitride, silicon oxynitride or its composition from supporter.For example, barrier film 330 can be membrane for polymer and metal level, perhaps can be polysilicon electrode and silicon nitride layer.
In embodiment, barrier film 330 does not comprise the isolation supporter.First electrode 337 and second electrode, 335 usefulness area of isolation 333 are kept apart.Area of isolation 333 can comprise such as silica, silicon nitride or such as the dielectric material of the high dielectric material of silicon oxynitride.First electrode 337 is mechanically connected to second electrode 335 by area of isolation 333.
Second electrode or sensing region 335 are configured to sensing signal and/or sensing signal are provided, and first electrode or tuning regional 337 is configured to by tuning or driving.Second electrode 335 is set to the sensing bias voltage, and first electrode 337 is set to tuning bias voltage.The tuning bias voltage of first electrode 337 is independent of the sensing biasing of second electrode 335.
Barrier film 330 is circular, square or comprises other any suitable shapes.First electrode 337 can comprise a plurality of first electrodes 337, and wherein a plurality of first electrodes 337 are configured to arrange identical VT or different VTs.Second electrode 335 can comprise a plurality of second electrodes, and wherein a plurality of second electrodes 335 are set to identical VT or different VTs.
Backboard 350 can comprise single electrode or a plurality of electrode.For example backboard 350 comprises first electrode and second electrode.First electrode of backboard 350 is corresponding with first electrode 337 of barrier film 330, and second electrode 335 of backboard 350 is corresponding with second electrode 335 of barrier film 330.First electrode of backboard 350 can be annulus or Q-RING, and first barrier film can be circle or Q-RING, and second electrode of backboard 350 can be circular or square, and second barrier film can be circular or square.
Fig. 4 a and 4b illustrate the cross-sectional view of the embodiment of MEMS structure 400.MEMS structure 400 comprises the similar element 410-450 of aforesaid Fig. 3 a and 3b.MEMS structure 400 further comprises additional barrier film 433 and additional pad, for example the 3rd pad 425.Barrier film 433 can comprise the conductive material such as polysilicon, DOPOS doped polycrystalline silicon or metal.The 3rd pad 425 can comprise such as silica, silicon nitride, such as the high dielectric material of silicon oxynitride or dielectric material or the insulating materials of its composition.
The barrier film of cutting apart 430 comprises second electrode or second barrier film 437 and first electrode or first barrier film 435.Second barrier film 437 can cover perimeter or the tuning zone of barrier film 430, and first barrier film 435 can cover interior zone or the sensing region of barrier film.The part of first barrier film 435 can be positioned on the part of second barrier film 437, and vice versa.The dielectric material of the 3rd pad 425 is mechanically connected to this two parts.Dielectric material can form substantially and comprise annulus or the Q-RING that covers the line that connects.
The advantage of the embodiment of Fig. 4 a is that the air gap that reduces has increased by the second barrier film 433(sensing region) tuning range.The advantage of the embodiment of Fig. 4 b is that the air gap that reduces has reduced the second barrier film 433(sensing region) tuning range.
Fig. 5 a and 5b illustrate cross-sectional view and the top view of the embodiment of MEMS structure 500.MEMS structure 500 comprises the element 510-550 of the element 110-150 in aforesaid Fig. 1 a and the 1b.MEMS structure 500 comprises single backboard (to electrode).Selectively, MEMS structure 500 comprise have at least two electrodes cut apart to backboard (to electrode).
Can be configured to be set to sensing bias voltage (V with backboard or to electrode 550
Sensing), semiconductor substrate 510 is configured to be set to tuning bias voltage (V
Tuning).Barrier film 530 is set to ground.Barrier film 530 comprises central area and perimeter.The perimeter of barrier film 530 and encircle 518 form can be along with VT (V
Tuning) and tuning capacitor.In one embodiment, edge 515 and ring 518 are jagged.Ring 518 can be bored a hole in order to the opening 519 that identical spacing is separated.Each opening 519 can comprise the width of about 10 μ m.The release etching (extended release etch) that opening 519 can be used an extension is formed in the semiconductor substrate 510.
Fig. 6 a illustrates the embodiment of the manufacture method of tunable MEMS device.This method comprises: form first pad (step 601) at semiconductor substrate, form travelling electrode (step 602) at first pad.Selectively, in step 603, travelling electrode is constructed to first travelling electrode and second travelling electrode.Travelling electrode can be barrier film or vibrating membrane.Next, form on second pad (step 604) at travelling electrode.Afterwards, form electrode (step 605) at second pad.Again alternatively, be first pair of electrode and second pair of electrode (step 606) to electrode structure.Can be backboard to electrode.In step 607, remove with the part of first and second gasket materials and around the semiconductive material substrate of travelling electrode at last.
Fig. 6 b illustrates the embodiment of the manufacture method of tunable MEMS structure.This method comprises: form first pad (step 611) at semiconductor substrate, form first travelling electrode (step 612) at first pad.Afterwards, form second pad (step 613) and form second travelling electrode (step 614) at second pad at first travelling electrode.First and second travelling electrodes can be barrier film or diaphragm.Form electrode (step 616) at second travelling electrode formation the 3rd pad (step 615) and at the 3rd pad.Alternatively, in step 617, be first pair of electrode and second pair of electrode to electrode structure.Can be backboard to electrode.In step 618, remove with the part of first, second, and third gasket material with around the semiconductive material substrate of first and second travelling electrodes at last.
Fig. 6 c illustrates the embodiment of the manufacture method of tunable MEMS structure.This method comprises: form first pad (step 612) at semiconductor substrate, form travelling electrode (step 622) and form second pad (step 623) at travelling electrode at first pad.This travelling electrode can be barrier film or vibrating membrane.Next step forms electrode (step 624) at second pad.Can be backboard to electrode.Next step removes (step 625) with the part of the material of first, second, and third pad with around the semiconductive material substrate of travelling electrode.At last, along edge etching broached-tooth design or a plurality of opening of semiconductor substrate.
Although described the present invention and advantage thereof in detail, should be appreciated that, can carry out various distortion at this, substitute and change and do not depart from the spirit and scope of the present invention as limiting in the claims.
In addition, be not to be intended to scope with this application to be limited in technology, machine, manufacturing described in this specification, under the specific embodiment of the composition of material, means, method and step.As those of ordinary skill in the art, will be easy to from composition, means, method or the step of open, technology of the present invention, machine, manufacturing, material, figure out in that exist now or the development in the future, because can utilize corresponding embodiment as described herein according to the present invention, thereby carry out identical functions substantially or obtain identical result substantially.Correspondingly, claims are intended to comprise composition, means, method or the step of this sampling technology, machine, manufacturing, material in its scope.
Claims (20)
1. semiconductor device comprises:
Substrate;
Travelling electrode; And
To electrode, wherein, described travelling electrode or described electrode is comprised first area and second area, wherein, described first area and described second area are isolated, wherein, described first area is configured to by tuning, and wherein, described second area is configured to provide sensing signal or control system, and wherein, described travelling electrode and described electrode is mechanically connected to described substrate.
2. semiconductor device according to claim 1, wherein, described first area is set to
Tuning bias voltage V
Tuning, wherein, described second area is set to sensing bias voltage V
Sensing
3. semiconductor device according to claim 1, wherein, described first area surrounds described second area substantially.
4. semiconductor device according to claim 1, wherein, the area of described second area is substantially greater than the area of described first area.
5. semiconductor device according to claim 1, wherein, described first area or described second area comprise a plurality of electrodes.
6. MEMS structure comprises:
Substrate;
Travelling electrode; And
To electrode, described electrode is comprised first pair of electrode zone and second pair of electrode zone, wherein, described first pair of electrode zone and described second pair of electrode zone are isolated, and wherein, described electrode and described travelling electrode are mechanically connected to described substrate.
7. MEMS structure according to claim 6, wherein, described travelling electrode comprises first travelling electrode zone and the second travelling electrode zone, wherein, described first pair of electrode zone is corresponding to the described first travelling electrode zone, and wherein, described second pair of electrode zone is corresponding to the described second travelling electrode zone.
8. MEMS structure according to claim 7, wherein, described first travelling electrode zone and described first pair of electrode zone are set to tuning bias voltage V
Tuning, and wherein, described second travelling electrode zone and described second pair of electrode zone are set to sensing bias voltage V
Sense Survey
9. MEMS structure according to claim 7, wherein, the described first travelling electrode zone is set to than described second travelling electrode zone near described to electrode.
10. MEMS structure according to claim 7, wherein, the described second travelling electrode zone is set to than described first travelling electrode near described to electrode zone.
11. MEMS structure according to claim 6, wherein, described substrate is set to tuning bias voltage V
Tuning, and wherein, described electrode is set to sensing bias voltage V
Sensing
12. MEMS structure according to claim 6, wherein, substrate comprises the zigzag edge.
13. a MEMS structure comprises:
Semiconductor substrate;
Back plate electrode; And
Pile up barrier film, comprise first barrier film and second barrier film,
Wherein, describedly pile up barrier film and described backboard is mechanically connected to described semiconductor substrate.
14. MEMS structure according to claim 13, wherein, described first barrier film is arranged on described central area of piling up barrier film, and wherein, described second barrier film is arranged on described outer peripheral areas of piling up barrier film.
15. MEMS structure according to claim 13, wherein, the area of described first barrier film is greater than the area of described second barrier film.
16. MEMS structure according to claim 13, wherein, described first membrane portions covers described second barrier film.
17. MEMS structure according to claim 13 further comprises dielectric layer, and wherein, in the described moveable part that piles up barrier film, described dielectric layer is mechanically connected to described second barrier film with described first barrier film.
18. MEMS structure according to claim 13, wherein, described first barrier film is configured to provide sensing signal, and wherein, described second barrier film is configured to by tuning.
19. MEMS structure according to claim 18, wherein, described first barrier film is than the close described back plate electrode of described second barrier film.
20. MEMS structure according to claim 13, wherein, described second barrier film is than the close described backboard of described first barrier film.
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| US13/408,928 | 2012-02-29 | ||
| US13/408,928 US8723277B2 (en) | 2012-02-29 | 2012-02-29 | Tunable MEMS device and method of making a tunable MEMS device |
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| CN103288040A true CN103288040A (en) | 2013-09-11 |
| CN103288040B CN103288040B (en) | 2016-02-17 |
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| Country | Link |
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| US (1) | US8723277B2 (en) |
| KR (1) | KR101469348B1 (en) |
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| Publication number | Publication date |
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| KR101469348B1 (en) | 2014-12-04 |
| KR20130099895A (en) | 2013-09-06 |
| CN103288040B (en) | 2016-02-17 |
| US8723277B2 (en) | 2014-05-13 |
| DE102013203379B4 (en) | 2020-09-17 |
| US20130221453A1 (en) | 2013-08-29 |
| DE102013203379A1 (en) | 2013-08-29 |
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