CN103325689A - Radiating structure manufacturing method - Google Patents
Radiating structure manufacturing method Download PDFInfo
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- CN103325689A CN103325689A CN201210074799XA CN201210074799A CN103325689A CN 103325689 A CN103325689 A CN 103325689A CN 201210074799X A CN201210074799X A CN 201210074799XA CN 201210074799 A CN201210074799 A CN 201210074799A CN 103325689 A CN103325689 A CN 103325689A
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- radiating
- heat
- radiator structure
- radiating substrate
- manufacture method
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Abstract
The invention discloses a radiating structure manufacturing method. First, a radiating base plate is provided, then diamond particles or a thin film is formed on one face of the radiating base plate; a latex polymer layer is coated on the diamond particles or the thin film to form a radiating component, and finally the radiating component is combined with a heat emitting component. A diamond is of a carbon-carbon chain structure and has great chemical affinity and binding performance with an organic polymer structure such as a latex polymer, so that the diamond particles and the latex polymer layer are combined into one after coating and form a solid film under room temperature, the problems such as air clearance or untight attaching can be avoided.
Description
Technical field
The present invention relates to a kind of method for fabricating structure of heat elimination.
Background technology
Along with the microization of semiconductor integrated device, the heat dissipation problem that influences semiconductor integrated device operation usefulness also comes into one's own gradually.Traditional radiator structure is at heater members one radiating fin to be set, and is provided with a thermal interface material layer between heater members and radiating fin usually.
Above-mentioned thermal interface material layer is that the pottery of high thermal conductivity coefficient or metal oxide powder are scattered in the polymeric matrix, when temperature raises, the thermal interface material layer is by the solid-state semisolid of softening into, and the out-of-flatness surface between heater members and the radiating fin filled up, the heat that heater members is produced can be conducted by efficient.
Yet, above-mentionedly being scattered in the thermal interface material layer of polymeric matrix based on pottery or metal oxide powder, its heat-conductive characteristic is still not enough.Therefore, still need radiator structure of a kind of improvement and preparation method thereof at present, to solve semi-conductor industry for the demand of heat radiation.
Summary of the invention
Purpose of the present invention is providing radiator structure of a kind of improvement and preparation method thereof, to satisfy above-mentioned semi-conductor industry for the demand of heat radiation.
The invention discloses a kind of manufacture method of radiator structure, it is characterized in that, comprise: a heat-radiating substrate is provided; One side in this heat-radiating substrate forms diamond grains or film; Coating one emulsion polymer layer constitutes a radiating element on this diamond grains or film; And this radiating element and a heater members combined.Because the molecular structure of diamond itself is carbon carbon bond, have good chemical affinity and associativity with organic polymer structures such as emulsion polymers, so after coating, also be combined into one, and at room temperature be a solid film, can not produce the air gap or fit problem such as not fine and close.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiments cited below particularly, and cooperate appended graphicly, elaborate.Yet following preferred embodiments and graphic only for reference and explanation usefulness are limited the present invention.
Description of drawings
Fig. 1 to Fig. 3 illustration one embodiment of the present invention.
Wherein, description of reference numerals is as follows:
10 heater members
20 radiating elements
21 heat-radiating substrates
22 diamond grains
24 emulsion polymer layers
40 radiator structures
100 printed substrates
Embodiment
Fig. 1 to Fig. 3 illustration one embodiment of the present invention.As shown in Figure 1, provide a heat-radiating substrate 21 earlier, wherein, heat-radiating substrate 21 can be the substrate that a metal substrate or surface have ceramic plated layer, after chemical treatment, obtains the surface of a cleaning.Then, place chemical gaseous phase Shen to amass (chemical vapor deposition heat-radiating substrate 21, CVD) in the equipment, with heat-radiating substrate 21 heating, utilize hydrogen (H2) to reduce earlier and remove oxide, the recycling argon gas forms the surface of electricity slurry bombardment heat-radiating substrate 21, and its effective surface area is increased.
According to the preferred embodiment of the present invention, can utilize the strength of interlocking (interlock) to increase the long-pending adhesion of thin film in Shen.Then, heat-radiating substrate 21 is heated to reaction temperature, for example 500～1200 ℃, and feed methane (CH4) and hydrogen, chemical reaction by cracking, carbon atom Shen is amassed on the surface of heat-radiating substrate 21, and carbon atom arrangement becomes tridimensional network, forms diamond grains 22, also can be by the control reaction speed, increase the rate of deposition of carbon atom, make growth direction be planar, to form a diamond film.When slowing down the carbon atom rate of deposition, namely form diamond grains 22.Diamond has splendid heat conductivity, and possesses high rigidity, grows up in the surface of heat-radiating substrate 21 by the synthetic reaction that chemical gaseous phase Shen is long-pending, and by adjusting response parameter, the size of its growth can how rice be to time micron (sub-micron) between tens of.Also can utilize crystal method of heap of stone to form diamond grains 22 or film in addition.
As shown in Figure 2, after finishing the long-pending step in CVD Shen, the surface that is coated on heat-radiating substrate 21 that diamond grains 22 (or film) is even and fine and close, then on the surface of heat-radiating substrate 21, evenly be coated with an emulsion polymer (letax polymer) layer 24 or giant molecule film in spraying (spreading) mode, as heat-radiating substrate 21 and the interface of other device applying with buffering.Diamond grains 22, the emulsion polymer layer behind overcuring 24 constitute a radiating element 20 with heat-radiating substrate 21.Because the molecular structure of diamond itself is carbon carbon bond, have good chemical affinity and associativity with organic polymer structures such as emulsion polymers, so after coating, also be combined into one, and at room temperature be a solid film, can not produce the air gap or fit problem such as not fine and close.
As shown in Figure 3, radiating element 20 is provided with one of diamond grains 22 and emulsion polymer layer 24 faces down, with a heater members 10, for example semiconductor integrated device combines, and namely constitutes radiator structure 40 of the present invention, wherein, heater members 10 can be positioned on the printed substrate 100.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. the manufacture method of a radiator structure is characterized in that, comprises:
One heat-radiating substrate is provided;
One side in this heat-radiating substrate forms diamond grains or film;
Coating one emulsion polymer layer constitutes a radiating element on this diamond grains or film; And
This radiating element and a heater members are combined.
2. the manufacture method of radiator structure according to claim 1 is characterized in that, other comprises: with the heating of this heat-radiating substrate, utilize hydrogen to reduce and remove oxide.
3. the manufacture method of radiator structure according to claim 2 is characterized in that, other comprises: utilize argon gas to form the surface of this heat-radiating substrate of electricity slurry bombardment, its effective surface area is increased.
4. the manufacture method of radiator structure according to claim 1, it is characterized in that: this heater members is the semiconductor integrated device.
5. the manufacture method of radiator structure according to claim 1 is characterized in that: how rice is to time micron between tens of for the size of this diamond grains or film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210074799XA CN103325689A (en) | 2012-03-20 | 2012-03-20 | Radiating structure manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210074799XA CN103325689A (en) | 2012-03-20 | 2012-03-20 | Radiating structure manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103325689A true CN103325689A (en) | 2013-09-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210074799XA Pending CN103325689A (en) | 2012-03-20 | 2012-03-20 | Radiating structure manufacturing method |
Country Status (1)
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| CN (1) | CN103325689A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010003377A1 (en) * | 1998-07-28 | 2001-06-14 | Myoung Ki Yoo | Heat sink for a semiconductor device |
| US20040238946A1 (en) * | 2002-11-07 | 2004-12-02 | Kabushik Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Heat spreader and semiconductor device and package using the same |
| US20060113546A1 (en) * | 2002-10-11 | 2006-06-01 | Chien-Min Sung | Diamond composite heat spreaders having low thermal mismatch stress and associated methods |
-
2012
- 2012-03-20 CN CN201210074799XA patent/CN103325689A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010003377A1 (en) * | 1998-07-28 | 2001-06-14 | Myoung Ki Yoo | Heat sink for a semiconductor device |
| US20060113546A1 (en) * | 2002-10-11 | 2006-06-01 | Chien-Min Sung | Diamond composite heat spreaders having low thermal mismatch stress and associated methods |
| US20040238946A1 (en) * | 2002-11-07 | 2004-12-02 | Kabushik Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Heat spreader and semiconductor device and package using the same |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130925 |