CN103412406A - Red light semiconductor area array light source device for laser display - Google Patents
Red light semiconductor area array light source device for laser display Download PDFInfo
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- CN103412406A CN103412406A CN2013103261066A CN201310326106A CN103412406A CN 103412406 A CN103412406 A CN 103412406A CN 2013103261066 A CN2013103261066 A CN 2013103261066A CN 201310326106 A CN201310326106 A CN 201310326106A CN 103412406 A CN103412406 A CN 103412406A
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Abstract
The invention discloses a red light semiconductor area array light source device for laser display. The red light semiconductor area array light source device for laser display comprises a VCSEL area array and a microlens array, wherein the VCSEL area array at least comprises a plurality of VCSEL units which are used for emitting circular laser beams, and the microlens array is formed by a plurality of microlens and used for performing collimation rounding on the laser beams output by the VCSEL area array and outputting the laser beams. The light source device can reduce optical elements in a projection display optical path, shorten the length of a lighting optical path, and improve the optical energy utilization rate. In addition, the VCSEL area array can reduce interference between VCSEL lasers and weaken laser speckles, and therefore projection display quality is improved. According to the red light semiconductor area array light source device, the area array light source packaging technology and VCSEL are adopted, a two-dimensional array is easy to integrate, and the defect that power transmitted by a single tube is poor can be overcome. The VCSEL is available in wafer test, reduces cost greatly and is easy in modularization and packaging.
Description
Technical field
The invention belongs to laser display and use the semiconductor laser light source field, relate in particular to a kind of area array light source of red light semiconductor for laser display device and preparation method thereof.
Background technology
The semiconductor laser of take at present is the laser display of light source, because its colour gamut is large, rich color, color saturation is high, expressive force is strong; Light source life reaches several ten thousand hours; Low in energy consumption, be regarded as the color revolution the 4th generation display technique, be called as " revolution on the human vision history ".Relative solid state laser, its volume compact, temperature influence is little etc.Along with directly swashing the commercialization of the green light semiconductor LD penetrated, portable (compactness), efficient laser display system will be seized the markets such as home theater, micro projection demonstration, laser television.
Although LD can directly modulate, emission wavelength can be along with the temperature change of PN junction, swashs to penetrate power and also can change, and R, G, B color proportioning are changed, and makes the picture color distortion, so need to control the accurate temperature of LD.
In addition, the limited and sharp hot spot of penetrating of LD output power is elliptical shape.For obtaining high-power output, usually adopt array output, but the dense degree of array combination is subject to the restriction of LD thermal effect, encapsulation and heat radiation have been proposed to requirement.Array package causes the fill factor, curve factor of output beam to reduce, and, because laser bar bar does not mate with the hot coefficient of heat sink CTE, causes output beam generation " Smile " effect.Need to realize major axis collimation, slow axis collimation etc. to light beam.
One of most crucial parts that laser instrument shows as laser projection, the light source type difference, determined that the opticator of its laser display system is also different.Wherein, adopt all solid laser, the model machine size is bigger than normal, and the efficiency of light energy utilization is on the low side.And the employing semiconductor laser, its structure can be simplified, and the efficiency of light energy utilization is improved relatively.
At present, based on the new pattern laser projection display system of photomodulator, its three looks LASER Light Source, be respectively ruddiness LD array, blue light LD array, green all solid laser.This projection display system volume is all relatively large, especially the green glow all solid laser; Same adopt a plurality of single tube LD to be encapsulated as that the face battle array is red, blue light LD array, its package dimension is bigger than normal; And for realizing the major and minor axis collimation of light beam, the lens number of the beam shaping of employing is on the high side; For realizing the uniformity consistency of hot spot, the even light microscopic sheet number adopted in illumination path is more; And for slackening speckle, in light path, add diffusion sheet, each eyeglass has certain energy loss, and the luminous energy finally arrived on modulator is on the low side, and then causes the efficiency of light energy utilization of whole projection display system on the low side.
In addition, in laser light projection display system, the design of eliminating coherence is also very necessary.Because the monochromaticity of laser is good, long coherent length is arranged.If therefore do not take the eliminating coherence measure, each optical surface of optical projection system will produce various interference effects, form a large amount of spuious interference fringe of background and speckle noise.The picture quality shown in order to improve laser projection, remove coherent noise, should design suitable eliminating coherence device.At present, the eliminating coherence measure of usually adopting is: in light path, add the diffusion sheet of rotation, reduce the compound speckle in laser projection system, shortcoming is that system bulk is increased much; Utilize screen dissipation spot can realize the spot effect that dissipates preferably, but production cost is too high, and current domestic can not processing, practicality is very limited.Certainly, if can be from the Lights section spot that dissipates, advantage be to eradicate speckle fully, and shortcoming is technically to realize that difficulty is large.
In sum, for solving the above-mentioned technical bottleneck faced at laser light projection display system, the LASER Light Source volume is bigger than normal, beam shaping is difficult, even photosystem complexity, the eliminating coherence effect is undesirable, and the projection display optical system volume is large, and the efficiency of light energy utilization is on the low side, power consumption is large etc., hinders laser display and really moves towards market.Therefore, at present in the urgent need to the red, green, blue tricolor laser light-source angle from demonstration use, improve the collimation of Laser Output Beam, simplify the output beam shaping, improve beam uniformity, and realize the dissipation spot from light-source structure, and then simplify the structure of projection display optical system, dwindle the optical system volume, improve the efficiency of light energy utilization.
Summary of the invention
The present invention will solve existing laser light projection display system, because the LASER Light Source volume is bigger than normal, the output beam shaping is difficult, even photosystem complexity, the eliminating coherence effect is undesirable, the projection display optical system volume is large, the efficiency of light energy utilization is on the low side, and power consumption is large, and laser interference causes by force forming the problems such as speckle.
For this reason, the invention discloses a kind of area array light source of red light semiconductor for laser display device, it comprises VCSEL face battle array and microlens array; Wherein, described VCSEL face battle array comprises a plurality of VCSEL unit at least, and described VCSEL unit is for sending the sphering laser beam; Described microlens array consists of a plurality of lenticules, collimates after sphering and exports for the laser beam to the output of described VCSEL face battle array.
From technique scheme, can find out, the present invention has following beneficial effect:
With other light source for laser display, compare, without laser crystal, frequency-doubling crystal and other complicated optical system, simple in structure, reliability is high, and volume is little, low in energy consumption.
Employing face array light source encapsulation technology can realize any power by increasing single laser instrument number, thereby reduce, single laser instrument is swashed to the requirement of penetrating power; Adopt VCSEL, be easy to the integrated two-dimensional array, can make up the shortcoming of single tube emissive power deficiency; VCSEL, can greatly reduce costs at built-in testing, and easily modularization and encapsulation.
VCSEL has less far-field divergence angle, and good beam quality is sent the circular symmetry Gaussian beam, only needs simple shaping to get final product.And the light beam that traditional edge-emitting laser sends is the Elliptical Gaussian Beam with astigmatism, need the beam shaping system of complexity, costliness.
Employing face array light source encapsulation technology is also placed the collimation sphering that microlens array is realized light beam after the face array light source, can reduce the optical element in light path, shortens illumination path length, and improves the efficiency of light energy utilization.
Employing face array structure encapsulation technology, can reduce the interference capability between the VCSEL laser instrument, weakens laser speckle, thereby improve the Projection Display quality.
Employing face array light source encapsulation technology is passed through substrate; Good heat dissipation effect, reduce system power dissipation.
The accompanying drawing explanation
Fig. 1 is for the schematic diagram of the red light semiconductor area array light source device of laser display in the present invention.
Fig. 2 is the encapsulating structure figure of VCSEL array in the present invention.
Fig. 3 is for the making structural representation of the single VCSEL unit of the red light semiconductor area array light source device of laser display in the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Refer to shown in Figure 1ly, the invention provides a kind of area array light source of red light semiconductor for laser display device, it comprises:
One VCSEL array 101, it is be used to exporting the sphering laser beam, and due to the light beam of a plurality of VCSEL outputs, its spatial coherence is weakened, thereby has weakened the impact of laser speckle on laser light projection display system, thereby plays the eliminating coherence effect; This array package mode is consulted shown in Figure 2, and it is the N that consists of a plurality of VCSEL chip units 102 * M face array, and the core number of length and width direction is defined as 16: 9; Its whole light source luminescent size and photomodulator 106 (DMD) etc. are close, thereby realize light path simplification, the raising of the efficiency of light energy utilization.In addition, the light beam of a plurality of VCSEL outputs, its spatial coherence is weakened, thereby has weakened the impact of laser speckle on laser light projection display system; Wherein, described VCSEL chip unit 102, output wavelength be 630-670nm;
One microlens array 104, the subelement of this array is corresponding one by one with the subelement of VCSEL array, and it is for the laser beam homogenize shaping to VCSEL array output, exports after namely collimating sphering; It consists of a plurality of lenticules, can make in the following ways: by the selective ion exchange method, make on the multicomponent glass substrate; On the sintered glass ceramics substrate, adopt the photo-thermal method to make; On the Si substrate, make of ibl.Wherein, lenticular material can be used optical glass and resin hot forming method;
One field lens 105, it is placed on microlens array 104 back, for the light beam will every each and every one VCSEL unit 102 sent, expand to the same large with photomodulator 106 areas, each VCSEL unit overlapping being incident upon on the photomodulator surface of sphering light beam of sending like this.Can avoid single VCSEL element failure, impact is radiated at the lip-deep hot spot uniformity consistency of photomodulator;
One photomodulator 106, it,, for the light beam modulation that laser projection shows, shows the image of output etc.
Fig. 2 shows the encapsulating structure figure of VCSEL array in the present invention.As shown in Figure 2, described VCSEL array comprises:
The N that a plurality of VCSEL chip units 206 form * M face array, its
Layout is at the place, centre position of silicon substrate 202; Wherein, each VCSEL chip unit all sends laser 207;
Four alignment mark positions 203, it lays respectively on four angles of described silicon substrate 202, be used to realizing the autoregistration of flip chip bonding equipment;
The metal pad 204 that can infiltrate, its
For the N-type electrode of whole array, be positioned at the opposite side of the above N of substrate * M face array;
Bonding Au line 205, it is for the every row VCSEL chip unit by the VCSEL array and the bonding of P electrode.
The invention also discloses a kind of method for packing of VCSEL array structure.The method specifically comprises:
The making of step 1, silicon substrate 202: be thinned to by (100) the crystal orientation twin polishing at boron doped silicon substrate that 300um forms.On silicon substrate, graphic scheme is in temperature, to be the KOH:H of 70 ℃
2In the solution of O, form through the anisotropic etching of selective chemical.Wherein, etch mask is the thick Si of 300nm formed by the chemical vapor deposition that plasma strengthens
3N
4Layer.
Step 2, silicon substrate layout design: the position of the position of the physical dimension on silicon substrate 202, alignment mark 203, single VCSEL unit 206 launch windows is all determined in design, finally be used for realizing the flip chip bonding encapsulation of VCSEL array.
Thin resin bed passivation is adopted on the surface of step 3, silicon substrate, is used for stoping current leakage in substrate, and on substrate the noninfiltrated dielectric substrate of deposit, be to be used for stoping in the scolder current through line in the process of Reflow Soldering and back bonding.And, for the metal pad 204 that can infiltrate, formed by the Au/Ni/Cu alloy, wherein, Ni is as the diffusion impervious layer of the eutectic solder of 63Sn/37Pb, and by plating, realizes the metallization of copper, reaches with scolder and infiltrates.
Step 4, VCSEL nude film and base plate alignment, fixation procedure: the aiming at of the launch window position of VCSEL array and silicon substrate 202 is that the autoregistration by flip chip bonding equipment completes.Adopt stereo microscope and fluoroscopic monitoring device to observe, with reference to four registration marks 203 of silicon substrate, guarantee that laser array reasonably accurately is placed on silicon substrate 202.Wherein, when VCSEL array and silicon substrate alignment tolerance are better than 20um, can start bonding packaging.The temperature of welding case slowly is raised to 180 ℃, after spending several seconds, rapidly increases to 250 ℃.The eutectic Sn/Pb scolder of fusing starts to infiltrate metal pad 204, and the position of adjusting simultaneously chip of laser 206 reduces surface area and reaches free energy minimum in assembling.In welding process, nitrogen and formic acid steam, with being scaling powder, are supported enough infiltration and autoregistration.By under nitrogen environment, quick cooling solder joints, chip are finally by stable fixing.Alignment tolerance is about ± 10um.
Fig. 3 shows in the present invention the making structural representation for the single VCSEL unit of the red light semiconductor area array light source device of laser display.As shown in Figure 3, the single VCSEL cell formation of this device is:
One N-type electrode 304, it is grown in the back side of GaAs substrate 305, adopts evaporation deposition to form the electrode of wide of Ge/Au/Ni/Au;
One mechanical buffing GaAs substrate 305;
The distribution Bragg reflector DBR layer 303 of one bottom N-type Si doping, it is by 35 layers of Al
0.95GaAs/Al
0.5The GaAs alternating growth is on substrate 305 and form;
One independent restriction heterojunction 306, it is grown on the DBR layer 303 of top P type C doping, by Al
0.5GaInP and Al
0.7The barrier layer of GaInP forms;
One quantum well 307, it is grown on independent restriction heterojunction 306, by 3 or 4 lamination strain InGaP quantum well constitutions;
The DBR layer 308 of one top P type C doping, it is grown on active area 307, by 55 layers of AlAs/Al
0.5Ga
0.5The As alternating growth forms;
Two restraining barriers 302, it is grown on P type DBR layer 308, be used to realizing the control of transverse current;
One P type electrode 301, formed in the step deposited on top by the Ti/Pt/Au contact layer;
Wherein, active area is by 3 or 4 lamination strain InGaP quantum wells 307, and independent restriction heterojunction Al
0.5GaInP and Al
0.7The barrier layer 306 of GaInP forms, and reflection wavelength is 650nm.
The DBR layer 303 of bottom N-type Si doping and the DBR layer 308 of top P type C doping are respectively by 55 layers of AlAs/Al
0.5Ga
0.5As and 35 layers of Al
0.95GaAs/Al
0.5The GaAs alternating growth forms.The transverse current restriction is by after wet chemical technology etching step, and the thick AlAs layer formation of 30nm through selective oxidation, finally form P type electrode 301 at step deposited on top Ti/Pt/Au contact layer.
The ion beam etching auxiliary by wet method forms second larger step in wafer top etching, so that the passage of the GaAs substrate 305 that arrives the N-type doping to be provided.At the GaAs substrate back, adopt evaporation deposition to form the N-type electrode 304 of wide of Ge/Au/Ni/Au.Wherein, two contact layers of N-type and P type all form 410 ℃ of annealing.Through complanation and the passivation of two kinds of dissimilar photosensitive resin steps, the N-type contact layer arrives surface by the via hole of electrogilding in resin.Adopting nonwettable dielectric substrate of the metal pad formation of resin and infiltration is the flow of solder material be limited in the back bonding process.
Described substrate need to adopt mechanical buffing GaAs substrate 305, is thinned to 150um, and the cleavage sample is that single area is 5 * 5mm
2Laser array.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (11)
1. the area array light source of the red light semiconductor for laser display device, it comprises VCSEL face battle array and microlens array; Wherein, described VCSEL face battle array comprises a plurality of VCSEL unit at least, and described VCSEL unit is for sending the sphering laser beam; Described microlens array consists of a plurality of lenticules, collimates after sphering and exports for the laser beam to the output of described VCSEL face battle array.
2. light supply apparatus as claimed in claim 1, is characterized in that, described a plurality of VCSEL unit forms on substrate by flip chip bonding, and the output wavelength of described VCSEL unit is 630nm-670nm; Described microlens array is made by one of following manner: by the selective ion exchange method, make on the multicomponent glass substrate; On the sintered glass ceramics substrate, adopt the photo-thermal method to make; On silicon substrate, make of ibl.
3. light supply apparatus as claimed in claim 1, is characterized in that, the number of described VCSEL array VCSEL unit on the length and width direction is defined as 16: 9.
4. light supply apparatus as claimed in claim 1, is characterized in that, described laser instrument area array light source structure also comprises field lens; Described field lens is placed on the microlens array back, amplifies for the sphering beam expander that single VCSEL unit is sent, and the sphering light beam that makes each VCSEL unit send is exaggerated rear consistent size.
5. light supply apparatus as claimed in claim 4, is characterized in that, described laser instrument area array light source structure also comprises photomodulator; The sphering beam area of described each VCSEL unit after field lens amplifies is identical with the area of described photomodulator, and equal overlapping being projected on described photomodulator; Described photomodulator refers to the light beam on it for modulating transmission, and shows corresponding image.
6. light supply apparatus as claimed in claim 2, it is characterized in that, a plurality of VCSEL unit on substrate forms described VCSEL face battle array by flip chip bonding, and its concrete structure comprises: substrate and be positioned at a plurality of VCSEL unit, alignment mark, P electrode and the N electrode on substrate; Wherein, described a plurality of VCSEL unit is by bonding line and P electrode bonding; Described alignment mark is for aiming at the relevant position on substrate when the described a plurality of VCSEL of flip chip bonding unit.
7. as the described light supply apparatus of claim 1-6 any one, it is characterized in that, the structure of each in described a plurality of VCSEL unit comprises from bottom to up successively: the DBR layer, restraining barrier and the P type electrode that are grown in N-type electrode, the substrate of substrate back, the DBR layer that is grown in the P type C doping of substrate face, independent restriction heterojunction, active area, N-type Si doping.
8. light supply apparatus as claimed in claim 7, is characterized in that, the Al of the active area of each in described a plurality of VCSEL unit in 3 or 4 lamination strain InGaP quantum wells and independent restriction heterojunction
0.5GaInP and Al
0.7The GaInP barrier layer forms, and its reflection wavelength is 650nm.
9. light supply apparatus as claimed in claim 7, is characterized in that, the DBR layer of the DBR layer of described N-type Si doping and P type C doping is respectively by 55 layers of AlAs/Al
0.5Ga
0.5As and 35 layers of Al
0.95GaAs/Al
0.5The GaAs alternating growth forms.
10. light supply apparatus as claimed in claim 7, is characterized in that, described restraining barrier is for realizing the control of transverse current, and it forms through the thick AlAs layer of selective oxidation 30nm by after the wet-chemical chamber step.
11. light supply apparatus as claimed in claim 7, is characterized in that, described N-type electrode adopts evaporation deposition Ge/Au/Ni/Au to form, and described P type electrode adopts evaporation deposition Ti/Pt/Au to form.
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| CN104319629A (en) * | 2014-11-10 | 2015-01-28 | 李德龙 | High-power semiconductor laser based on VCSEL and VCSEL laser module thereof |
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| US11469573B2 (en) | 2019-02-04 | 2022-10-11 | Apple Inc. | Vertical emitters with integral microlenses |
| CN111580281A (en) * | 2019-02-15 | 2020-08-25 | 奇景光电股份有限公司 | Optical device |
| CN110336183A (en) * | 2019-08-08 | 2019-10-15 | 北京一径科技有限公司 | A kind of semiconductor laser apparatus and laser radar system |
| CN113540958A (en) * | 2021-07-05 | 2021-10-22 | 浙江航天润博测控技术有限公司 | Compact laser light source |
| CN113589322A (en) * | 2021-07-06 | 2021-11-02 | 太原理工大学 | VCSEL linear array for multi-line laser radar |
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| CN103412406B (en) | 2015-12-09 |
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