CN103451620A - Surface treatment method of metal silicide barrier layer - Google Patents
Surface treatment method of metal silicide barrier layer Download PDFInfo
- Publication number
- CN103451620A CN103451620A CN2013103917249A CN201310391724A CN103451620A CN 103451620 A CN103451620 A CN 103451620A CN 2013103917249 A CN2013103917249 A CN 2013103917249A CN 201310391724 A CN201310391724 A CN 201310391724A CN 103451620 A CN103451620 A CN 103451620A
- Authority
- CN
- China
- Prior art keywords
- metal silicide
- blocking layer
- treatment method
- surface treatment
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to a surface treatment method of a metal silicide barrier layer, which is applied in a self-alignment sialicide process. The surface treatment method is characterized by comprising the following steps: providing a substrate; preparing a metal silicide barrier layer on the upper surface of the substrate; carrying out a plasma process on the metal silicide barrier layer to remove hydrogen in the metal silicide barrier layer; spin coating a photoresist to cover the upper surface of the metal silicide barrier layer; and continuing a successive self-alignment silicide process step. The method provided by the invention can be used for reducing the spherical defect occurrence possibility after spin coating a photoresist on the metal silicide barrier layer, improving the stability of the process and perfecting the product yield.
Description
Technical field
The present invention relates to reduce in a kind of process for fabricating semiconductor device the method for defective workmanship, relate in particular to a kind of surface treatment method of silicon nitride film as blocking layer of metal silicide that adopt.
Background technology
Because semiconductor device technology is more and more various at present, consequent also harsh all the more for the requirement in preparation process, that industry generally adopts is plasma enhanced chemical vapor deposition technique (Plasma Enhanced Chemical Vapor Deposition, be called for short: (Salicide Block is called for short: SAB) PECVD) to carry out the silicon nitride blocking layer of metal silicide for preparing of silicon nitride blocking layer of metal silicide.Think ratio with traditional heat growth method, higher by the grow purity of silicon nitride film of preparation of heat.But, envrionment temperature in heat growth method is higher, it reaches 600 ℃ ~ 900 ℃ usually, and it is usually very high to temperature requirement in existing semiconductor device fabrication processes, be not suitable at high temperature carrying out technique, therefore, what industry generally adopted is the preparation that plasma enhanced chemical vapor deposition technique is carried out the silicon nitride blocking layer of metal silicide, the general reactant gas silane (SiH that adopts in this technique
4) and NH
3plasma body carry out the deposition of silicon nitride film, due to NH
3exist H in plasma body
+, therefore, at the film forming H that part can inevitably be arranged of bombardment simultaneously
+ion residues is in film, and content is generally 9% ~ 30%.Easily be discharged into the surface of film under this hydrogeneous high vacuum condition of silicon nitride film in successive process, impact follow-up technique is integrated.
Be embodied in: in the blocking layer of metal silicide integrated technique, need to be coated with photoresist material on the silicon nitride blocking layer of metal silicide, and exposed, the photoetching process such as development to be to form the photoresistance pattern, and in the process that photoresist material is exposed, the H in silicon nitride film
+easily with photoresistance, react and form ball defects (Ball defect).
The mechanism of production of above-mentioned ball defects can be tested to verify by three groups, in first group of experiment, adopts pecvd process to carry out the deposition of silicon nitride film, then is coated with photoresistance and photoetching process, and ball defects appears in the silicon nitride surface after this technique; Increase the step that a step removes photoresistance in second group of experiment on the method for first group of experiment, find that the ball defects on the silicon nitride film surface after this step disappears; In the 3rd group of experiment, adopt hot growth technique to carry out the deposition of silicon nitride film, then be coated with photoresistance and photoetching process, the silicon nitride surface after this technique does not have ball defects.Contrasting above-mentioned three groups of experiments can find, the reason that produces ball defects in silicon nitride film is to produce due to the hydrogen of introducing in silicon nitride film in pecvd process and photoresistance reaction.
Chinese patent (publication number: CN 102703879) discloses a kind of deposition method of blocking layer of metal silicide film, comprises substrate is provided; Utilize subatmospheric chemical Vapor deposition process cvd silicon dioxide film on substrate; Silica membrane to formation of deposits carries out UV-irradiation; Take out substrate.This patent is by carrying out UV-irradiation to remove unnecessary Si-H key in blocking layer to blocking layer of metal silicide, need to device be transferred to the step of on the board of illumination process, being removed H after having deposited blocking layer of metal silicide, this also is unfavorable for the integration of processing step; It does not have open to adopting the treatment process of silicon nitride as impurities H in blocking layer of metal silicide yet in addition.
Therefore, still there is not an effective solution in industry for this technical problem at present.
Summary of the invention
In view of the above problems, the invention provides a kind of surface treatment method of blocking layer of metal silicide.
The technical scheme that technical solution problem of the present invention adopts is:
A kind of surface treatment method of blocking layer of metal silicide, be applied in self-registered technology, and wherein, described method comprises:
One substrate is provided;
Upper surface in described substrate prepares a blocking layer of metal silicide;
Described blocking layer of metal silicide is carried out to plasma process, to remove the impurity in described blocking layer of metal silicide;
The spin coating photoresist material covers the upper surface of described blocking layer of metal silicide;
Continue follow-up self-alignment silicide technology step.
The surface treatment method of described blocking layer of metal silicide, wherein, described follow-up self-alignment silicide technology comprises:
Described photoresist material is exposed, after developing process, removed unnecessary photoresist material, formed the photoresistance pattern;
Take described photoresistance pattern as the described blocking layer of metal silicide of mask etching to the upper surface of described substrate.
The surface treatment method of described blocking layer of metal silicide, wherein, adopt N
2plasma body carries out plasma process to described blocking layer of metal silicide.
The surface treatment method of described blocking layer of metal silicide wherein, is, under 1000sccm ~ 10000sccm, the radio frequency power processing condition that are 100W ~ 2000W, described blocking layer of metal silicide is carried out to plasma process at gas flow.
The surface treatment method of described blocking layer of metal silicide, wherein, the process time of described blocking layer of metal silicide being carried out to plasma process is 20s ~ 120s.
The surface treatment method of described blocking layer of metal silicide, wherein, described substrate comprises silicon base and silicon dioxide layer, and described silicon dioxide layer covers the upper surface of described silicon base, and described blocking layer of metal silicide covers the upper surface of described silicon dioxide layer.
The surface treatment method of described blocking layer of metal silicide, wherein, the material of described blocking layer of metal silicide is silicon nitride.
The surface treatment method of described blocking layer of metal silicide, wherein, in same chamber, carry out successively the preparation technology of described blocking layer of metal silicide and this blocking layer of metal silicide carried out to plasma process.
Technique scheme has following advantage or beneficial effect:
The present invention carries out the surface-treated processing step by increase by a step after pecvd process prepares blocking layer of metal silicide to blocking layer of metal silicide, to remove blocking layer of metal silicide residual hydrogen in preparation process, after making on to this blocking layer of metal silicide the coating photoresist material, reduced the possibility that ball defects occurs, improve the stability of manufacturing process, improved the yield of product; In addition, increase blocking layer of metal silicide is carried out to the surface-treated processing step is that using plasma is processed, its technique that can prepare with PECVD before blocking layer of metal silicide is carried out technique in same reaction cavity, therefore there is good integration, can not increase the processing unit cost, the time loss produced while yet having avoided silicon chip to shift simultaneously.
The accompanying drawing explanation
With reference to appended accompanying drawing, to describe more fully embodiments of the invention.Yet appended accompanying drawing only, for explanation and elaboration, does not form limitation of the scope of the invention.
Fig. 1 is that in the inventive method embodiment, the using plasma chamber carries out blocking layer of metal silicide surface-treated schematic diagram.
embodiment
The invention provides a kind of surface treatment method of blocking layer of metal silicide.It is be more than or equal to 130nm, 90nm, 65/55nm, 45/40nm, 32/28nm and be less than or equal in the technique of 22nm that the present invention can be used for technology node; The present invention can be used in the technology platforms such as Logic, Memory, RF, HV, Analog/Power, Flash and eFlash.
The present invention is directed to using plasma enhancing chemical vapor deposition method and prepare the problem that has unnecessary hydrogen in the blocking layer of metal silicide that material is silicon nitride, is N by continuing to pass to raw material
2plasma body its surface is processed, make hydrogen unnecessary in this blocking layer of metal silicide and N
2plasma body is reacted, to remove unnecessary hydrogen in blocking layer of metal silicide.
At above-mentioned employing N
2in the process that plasma body is processed blocking layer of metal silicide, using plasma strengthens the chemical vapor deposition process chamber chamber, at flow, be 1000sccm ~ 10000sccm(1000sccm, 2000 sccm, 3000 sccm, 4000 sccm, 5000 sccm, 6000 sccm, 7000 sccm, 8000 sccm, 9000 sccm, 10000 sccm etc.), radio frequency (RF) power is that 100W ~ 2000W(is as 100W, 300 W, 500 W, 700 W, 900 W, 1100 W, 1300 W, 1500 W, 1700 W, 2000 W etc.) under condition, blocking layer of metal silicide is carried out to 20sec ~ 120sec(as 20 sec, 40 sec, 60 sec, 80 sec, 100 sec, 120 sec etc.) surface treatment, make hydrogen in this blocking layer of metal silicide fully and N
2plasma reaction generates gas and discharges deposition chambers.
Below in conjunction with the drawings and specific embodiments, the inventive method is elaborated.
Fig. 1 is that in the inventive method embodiment, the using plasma chamber carries out blocking layer of metal silicide surface-treated schematic diagram.
Pass through N
2the concrete grammar that plasma body is processed the blocking layer of metal silicide surface is: as shown in Figure 1, the silicon chip 1 that will be prepared with blocking layer of metal silicide (silicon nitride film) is placed in the plasma enhanced chemical vapor deposition processing chamber, by cavity bottom, vacuumized, be adsorbed on the lower electrode plate 2 in reaction chamber with the back side by silicon chip 1, pass to N in the air inlet port above reaction chamber 3 subsequently
2gas, this N
2gas forms N after electric pole plate 4
2plasma body 5, the evenly ejection in several gas orifices 6 of pole plate 4 from power on of this plasma body, act in the silicon nitride film on silicon chip 1, thereby make N
2nitrogen ion (N in plasma body 5
+) 7 and electronics (e) 8 and silicon nitride film in hydrogen ion (H
+) 9 reaction generation NH
3gas, this NH
3gas is discharged from from the hole 10 that vacuumizes of reaction chamber bottom, thereby by the H in blocking layer of metal silicide
+remove.
Pass through N
2the principle that plasma body is processed the blocking layer of metal silicide surface is, nitrogen N
2form N after plasma body
2plasma body, in plasma body, for portions of electronics, atom and the atom after being deprived of is ionized rear produced positron-electron, and integral body is electric neutrality; Wherein, N
2molecule, after plasma body, forms unbound electron e and charged ion N
2 +(as chemical formula N
2→ N
2 +shown in+e), charged ion N wherein
2 +can further form ion N
+with atom N(as chemical formula N
2 +→ N
+shown in+N), as ion N
+while acting on silicon nitride blocking layer of metal silicide surface, N
+h with silicon nitride blocking layer of metal silicide surface
+ion and electronics e reaction, generate NH
3gas is (as chemical formula N
++ 3H
++ 4e → NH
3↑), by this NH
3gas is by H unnecessary in silicon nitride film
+discharge the NH of generation
3gas is discharged from by the hole that vacuumizes of plasma enhanced chemical gas-phase reaction chamber bottom.
Equal using plasma technique owing to preparing the silicon nitride blocking layer of metal silicide and this silicon nitride blocking layer of metal silicide is carried out to surface treatment, therefore, can be integrated in above-mentioned two processing steps in same reaction chamber and carry out.According to different technique needs, optional, (1) is by N
2plasma-treating technology is incorporated in silicon nitride blocking layer of metal silicide depositing operation, makes N
2cement Composite Treated by Plasma becomes a step in silicon nitride blocking layer of metal silicide depositing operation, inner increase by one step of process menu (recipe) deposited at the silicon nitride blocking layer of metal silicide; (2) by N
2plasma-treating technology separates with silicon nitride blocking layer of metal silicide depositing operation, is about to N
2plasma-treating technology is as an independent process menu.
In sum, the present invention is directed in the silicon nitride blocking layer of metal silicide prepared by plasma enhanced chemical vapor deposition technique under low temperature environment and have unnecessary impurities H, by adopting N
2plasma body is processed the silicon nitride film surface of preparation, makes unnecessary impurities H and N in silicon nitride film
2plasma reaction generates NH
3gas, to take impurities H out of silicon nitride film, promoted the purity of silicon nitride film, makes in SAB technique, while on silicon nitride film, preparing photoresistance, can avoid because have unnecessary hydrogen and the problem of the appearance ball defects that causes in silicon nitride film.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as.In claims scope, scope and the content of any and all equivalences, all should think and still belong to the intent and scope of the invention.
Claims (8)
1. the surface treatment method of a blocking layer of metal silicide, be applied to, in self-registered technology, it is characterized in that, described method comprises:
One substrate is provided;
Upper surface in described substrate prepares a blocking layer of metal silicide;
Described blocking layer of metal silicide is carried out to plasma process, to remove the impurity in described blocking layer of metal silicide;
The spin coating photoresist material covers the upper surface of described blocking layer of metal silicide;
Continue follow-up self-alignment silicide technology step.
2. the surface treatment method of blocking layer of metal silicide as claimed in claim 1, is characterized in that, described follow-up self-alignment silicide technology comprises:
Described photoresist material is exposed, after developing process, removed unnecessary photoresist material, formed the photoresistance pattern;
Take described photoresistance pattern as the described blocking layer of metal silicide of mask etching to the upper surface of described substrate.
3. the surface treatment method of blocking layer of metal silicide as claimed in claim 1, is characterized in that, adopts N
2plasma body carries out plasma process to described blocking layer of metal silicide.
4. the surface treatment method of blocking layer of metal silicide as claimed in claim 3, it is characterized in that, be, under 1000sccm ~ 10000sccm, the radio frequency power processing condition that are 100W ~ 2000W, described blocking layer of metal silicide is carried out to plasma process at gas flow.
5. the surface treatment method of blocking layer of metal silicide as claimed in claim 3, is characterized in that, the process time of described blocking layer of metal silicide being carried out to plasma process is 20s ~ 120s.
6. the surface treatment method of blocking layer of metal silicide as claimed in claim 1, it is characterized in that, described substrate comprises silicon base and silicon dioxide layer, and described silicon dioxide layer covers the upper surface of described silicon base, and described blocking layer of metal silicide covers the upper surface of described silicon dioxide layer.
7. the surface treatment method of blocking layer of metal silicide as claimed in claim 1, is characterized in that, the material of described blocking layer of metal silicide is silicon nitride.
8. the surface treatment method of blocking layer of metal silicide as claimed in claim 1, is characterized in that, in same chamber, carries out successively the preparation technology of described blocking layer of metal silicide and this blocking layer of metal silicide is carried out to plasma process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103917249A CN103451620A (en) | 2013-09-02 | 2013-09-02 | Surface treatment method of metal silicide barrier layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103917249A CN103451620A (en) | 2013-09-02 | 2013-09-02 | Surface treatment method of metal silicide barrier layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103451620A true CN103451620A (en) | 2013-12-18 |
Family
ID=49734445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013103917249A Pending CN103451620A (en) | 2013-09-02 | 2013-09-02 | Surface treatment method of metal silicide barrier layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103451620A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104289382A (en) * | 2014-07-10 | 2015-01-21 | 华东师范大学 | Method for depositing film on sidewall of micro-channel plate through rotary suction technology, and special apparatus therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1245835A (en) * | 1998-08-24 | 2000-03-01 | 三星电子株式会社 | Hydrogen inhibition method in silicon device with or without ferroelectric clad underlayer |
| US20030228770A1 (en) * | 2002-06-05 | 2003-12-11 | Samsung Electronics Co., Ltd. | Method of forming a thin film with a low hydrogen content on a semiconductor device |
| US6740605B1 (en) * | 2003-05-05 | 2004-05-25 | Advanced Micro Devices, Inc. | Process for reducing hydrogen contamination in dielectric materials in memory devices |
| CN1592957A (en) * | 2000-12-28 | 2005-03-09 | 大见忠弘 | Semiconductor device and its manufacturing method |
| US7041543B1 (en) * | 2004-08-20 | 2006-05-09 | Novellus Systems, Inc. | Strained transistor architecture and method |
-
2013
- 2013-09-02 CN CN2013103917249A patent/CN103451620A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1245835A (en) * | 1998-08-24 | 2000-03-01 | 三星电子株式会社 | Hydrogen inhibition method in silicon device with or without ferroelectric clad underlayer |
| CN1592957A (en) * | 2000-12-28 | 2005-03-09 | 大见忠弘 | Semiconductor device and its manufacturing method |
| US20030228770A1 (en) * | 2002-06-05 | 2003-12-11 | Samsung Electronics Co., Ltd. | Method of forming a thin film with a low hydrogen content on a semiconductor device |
| US6740605B1 (en) * | 2003-05-05 | 2004-05-25 | Advanced Micro Devices, Inc. | Process for reducing hydrogen contamination in dielectric materials in memory devices |
| US7041543B1 (en) * | 2004-08-20 | 2006-05-09 | Novellus Systems, Inc. | Strained transistor architecture and method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104289382A (en) * | 2014-07-10 | 2015-01-21 | 华东师范大学 | Method for depositing film on sidewall of micro-channel plate through rotary suction technology, and special apparatus therefor |
| CN104289382B (en) * | 2014-07-10 | 2019-04-05 | 华东师范大学 | Using rotation suction method microchannel plate side wall deposition film method and its dedicated unit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11676812B2 (en) | Method for forming silicon nitride film selectively on top/bottom portions | |
| CN110431661B (en) | Two-step process for gap filling high aspect ratio trenches with amorphous silicon films | |
| US10622375B2 (en) | Method of processing a substrate and a device manufactured by using the method | |
| TWI278023B (en) | Method for forming a high density dielectric film by chemical vapor deposition | |
| CN103620788B (en) | Use PECVD SiO2The method that passivation protection (passivation) manufactures indium gallium zinc oxide (IGZO) and zinc oxide (ZNO) thin film transistor (TFT) | |
| US20070000870A1 (en) | Plasma processing method | |
| US8716149B2 (en) | Methods for fabricating integrated circuits having improved spacers | |
| KR20090119661A (en) | Protective layer to enable damage free gap fill | |
| CN106133884A (en) | Halogen-free gas-phase silicon etches | |
| CN102978586A (en) | Film deposition apparatus and film deposition method | |
| CN106449362B (en) | A method of improving stress memory technological effect | |
| KR20040100767A (en) | method for forming low pressure-silicon nitride layer | |
| JP2004363558A (en) | Manufacturing method of semiconductor device, and cleaning method of plasma etching device | |
| CN103451620A (en) | Surface treatment method of metal silicide barrier layer | |
| CN108470715B (en) | Double-layer wiring planarization processing technology | |
| US9305795B2 (en) | Plasma processing method | |
| CN102820219A (en) | Forming method of low-temperature silica film | |
| CN103117201B (en) | The forming method of PECVD device and semiconductor device | |
| CN102832119A (en) | Method for forming low temperature silicon dioxide film | |
| CN103779267B (en) | A kind of forming method of semiconductor structure | |
| CN109300781A (en) | The manufacturing method of ONO film layer | |
| JPWO2012060423A1 (en) | Radical cleaning apparatus and method | |
| CN102446918A (en) | Structure for preventing etch stop layer from cracking and method for forming structure | |
| KR20080012056A (en) | Method for forming dielectric layer of semiconductor memory device | |
| CN106356337A (en) | Manufacturing method of semiconductor apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20131218 |
|
| RJ01 | Rejection of invention patent application after publication |