CN103484025A - Self-stop GST (Ge2Sb2Te5) chemical mechanical polishing solution as well as preparation method and application thereof - Google Patents
Self-stop GST (Ge2Sb2Te5) chemical mechanical polishing solution as well as preparation method and application thereof Download PDFInfo
- Publication number
- CN103484025A CN103484025A CN201310447272.1A CN201310447272A CN103484025A CN 103484025 A CN103484025 A CN 103484025A CN 201310447272 A CN201310447272 A CN 201310447272A CN 103484025 A CN103484025 A CN 103484025A
- Authority
- CN
- China
- Prior art keywords
- chemical mechanical
- self
- mechanical polishing
- polishing liquid
- gst
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to the field of chemical mechanical polishing, in particular to a self-stop chemical mechanical polishing solution effectively applied to a phase-change material GST (Ge2Sb2Te5) as well as a preparation method and application of the self-stop chemical mechanical polishing solution. The self-stop chemical mechanical polishing solution is made from the following raw materials in parts by weight: 0.2-30 parts of polishing particles, 0.0001-5 parts of an organic protective agent, 0.01-5 parts of an oxidant, 0.01-4 parts of a surfactant, 85-95 parts of a water-based medium and a proper amount of a pH regulating agent; the pH value of the self-stop GST chemical mechanical polishing solution is 2-6. According to the self-stop chemical mechanical polishing solution which is applied to the phase-change material GST graph piece, the protective agent in the self-stop chemical mechanical polishing solution can be attached to the surface of the phase-change material GST when the phase-change material GST is lower than silicon oxide to form a protection film on the surface of the phase-change material GST so as to protect the phase-change material GST and avoid the formation of a butterfly-shaped pit.
Description
Technical field
The present invention relates to the chemically machinery polished field, particularly relate to and a kind ofly can effectively be applied to self-stopping technology chemical mechanical polishing liquid of phase change material GST and its preparation method and application.
Background technology
The advantages such as phase transition storage reads at a high speed because having, high erasable number of times, non-volatile, component size is little, strong motion low in energy consumption, anti-and radioprotective, and thought by international semiconductor employer's organization flash memories that most possible replacement is current and become following storer main product and become at first the device of commercial product.
The ultimate principle of phase transition storage technology is to take chalcogenide compound as storage media, utilize electric energy (heat) to make material mutually change and realize writing and wiping of information between crystalline state (low-resistance) and non-crystalline state (high resistant), the variation of leaning on measuring resistance of reading of information realizes.Typical phase change material is the chalcogenide alloy film, and the most ripe material is the GeSbTe alloy.Storage unit comprises that phase change material is deposited in pore by the pore of dielectric substance definition, and phase change material is connection electrode on an end of pore.Electrode contact makes electric current be programmed to this unit by this passage generation joule heating, or reads the resistance states of this unit.
At present, when building phase-change memory cell, current way is: first pass through the method sediment phase change material of magnetron sputtering in the pore by the dielectric substance definition, then by the method for reactive ion etching (RIE) or chemically machinery polished (CMP), the phase change material of thin empty top is removed.Than RIE, CMP is because having advantages of surface low damnification and can realizing overall planarization, and the parent who has been subject to many researchists and semiconductor company looks at.
For meeting the demand for preparing CMP technique in sodium electronic phase-variable memory, need controlled with no damage phase change material being removed, also wish to reduce as far as possible the loss of lower floor's insulating material simultaneously.
Summary of the invention
The shortcoming of prior art, the invention provides a kind of for phase change material Ge in view of the above
2sb
2te
5(GST) self-stopping technology chemically machinery polished (CMP) liquid, for solving the problems of the prior art, described self-stopping technology chemical mechanical polishing liquid is mainly used in the polishing of GST pattern piece.The inventor herein finds a kind of organism protective material through broad research, can form on the surface of GST protective membrane, at the height of GST lower than SiO
2the time, be attached to the surface of GST, play the effect of protection GST.This provide protection has reduced the height in butterfly hole, and speed is controlled, the polishing of surface low damnification and noresidue, can meet the needs that prepare CMP technique in sodium electronic phase-variable memory.
Reach for achieving the above object other relevant purposes, first aspect present invention provides a kind of self-stopping technology chemical mechanical polishing liquid, and its raw material by weight, comprises following component:
The scope of the pH value of described self-stopping technology chemical mechanical polishing liquid is 2-6.
Preferably, described self-stopping technology chemical mechanical polishing liquid, its raw material by weight, comprises following component:
The scope of the pH value of described self-stopping technology chemical mechanical polishing liquid is 2-6.
Those skilled in the art can add appropriate pH adjusting agent according to practical situation, to reach required pH value.
Preferably, described pH adjusting agent is selected from one or more the combination in ammoniacal liquor, hydroxyethyl second two ammonia solns, aqueous nitric acid and aqueous hydrochloric acid.
Preferably, the particle diameter of described polishing particles is 80-120nm.
Preferred, described polishing particles is silicon dioxide gel.
Further preferred, the solvent of described silicon dioxide gel is water, and solid content is 25-35wt%.
Preferably, described organism protective material is selected from one or more the combination in propenyl thiocarbamide (CAS No:109-57-9), thiazolidine thioketones (CAS No:2682-49-7), sulphosalicylic acid (CAS No:5965-83-3), carboxymethyl cellulose (CAS No:9004-32-4), Natvosol (CAS No:9004-62-0) and empgen BB (dodecyl-dimethyl amine second lactone) (CAS No:683-10-3).
The molecular-weight average of described carboxymethyl cellulose is 900-15000.
The molecular-weight average of described Natvosol is 540-31000.
Preferably, the combination of one or more in described oxygenant chosen from Fe potassium cyanide, potassium permanganate, Periodic acid and hydrogen peroxide.
Preferred, the concentration of described hydrogen peroxide is about 30wt%.
Self-stopping technology chemical mechanical polishing liquid for phase change material GST pattern piece provided by the invention comprises oxygenant.For medal polish, the process It is generally accepted is that burning forms the soft aquation zone of oxidation of matter, and then zone of oxidation is removed, and again exposes fresh metal.So process is reciprocal, thereby realizes carrying out continuously of polishing process.For phase change film material GST, Sb and Te have metallicity clearly.Therefore, in the polishing process of phase change material GST, oxygenant is had extremely important effect continuously for polishing process.
Preferably, described tensio-active agent is aniorfic surfactant.
Preferred, described tensio-active agent is selected from one or more the combination in polyoxyethylenated alcohol sodium sulfate (Sodium Alcohol Ether Sulphate, AES), sodium polyacrylate and aliphatic alcohol polyoxyvinethene phosphate.
The chemical mechanical polishing liquid that automatically stops in phase change material GST pattern piece provided by the invention comprises at least one tensio-active agent.Tensio-active agent, with its distinctive structure and certain charged situation, can improve the stability of polishing fluid, thereby is beneficial to the chemically machinery polished of phase change material GST.
The molecular-weight average of described polyoxyethylenated alcohol sodium sulfate (AES) is 357-412.
The molecular-weight average of described sodium polyacrylate is 900-25000.
The molecular-weight average of described aliphatic alcohol polyoxyvinethene phosphate is 850-52000.
Preferably, described aqueous medium is water.
Preferred, described aqueous medium is deionized water.
Second aspect present invention provides the preparation method of described self-stopping technology chemical mechanical polishing liquid, comprises the steps:
1) by formula, oxygenant is added in aqueous medium, fully stir;
2) by formula, in step 1 gained mixture, add tensio-active agent, after fully stirring, use pH adjusting agent that the pH of mixed solution is adjusted to 2-6;
3) by formula, in step 2 gained mixture, add organic protective agent, fully stir;
4) by formula, in step 3 gained mixture, add polish abrasive, after fully stirring, obtain described self-stopping technology chemical mechanical polishing liquid.
Third aspect present invention provides the application of described self-stopping technology chemical mechanical polishing liquid in phase change material polishing field.
Provided by the invention for phase change material GST pattern piece self-stopping technology chemical mechanical polishing liquid; the organism protective material wherein contained can be attached to the surface of GST when the height of GST is lower than silicon oxide; form a kind of protective membrane on the surface of GST; play the effect of protection GST, thereby avoided the formation in butterfly hole.
In GST pattern piece polishing process, due to GST/SiO
2there is certain selection ratio, to GST pattern piece polishing fluid general requirement: not only high polishing speed will be arranged, also will there is high selection ratio simultaneously.In polishing process, GST pattern piece polishing fluid is owing to having high selection ratio, so when working as the cross section of polishing GST, due to high selectivity, the removal speed of GST is the speed of about silicon oxide far away, easily causes the formation in butterfly hole, and this result has had a strong impact on the carrying out of next step technique.The inventor has researched and developed a kind of GST acid polishing slurry of self-stopping technology, has comprised a kind of organism protective material in described polishing fluid, can in polishing process, be attached to the surface of GST.Because this organism is easily removed, so this protective material does not have influence on the removal speed of GST.When throwing the GST cross section, the height of GST is during lower than silicon oxide, and organism can be attached to the surface of GST, plays the effect of protection GST, and this provide protection has reduced the height in butterfly hole, and the problem of so-called dishing, reached self-stopping technology GST and removed.This protective material can not stick to the surface of GST simultaneously, by the process of cleaning, just can remove the protective material that is attached to the GST surface.Oxygenant, tensio-active agent and aqueous medium have also been comprised in this polishing fluid, reduced surfaceness simultaneously, the removal speed of GST reaches 200nm/min, and speed is controlled, surface low damnification, can meet the needs that prepare CMP technique in sodium electronic phase-variable memory.
The accompanying drawing explanation
Fig. 1 is shown as GST pattern piece structure.
Fig. 2 is shown as the butterfly hole on the GST pattern piece.
Fig. 3 is shown as GST pattern piece polishing process.
Fig. 4 is shown as the structure iron that is polished to the GST cross section.
Fig. 5 is shown as and does not add protectant polishing test result figure.
Fig. 6 is shown as and adds protectant polishing test result figure.
The element numbers explanation
1 SiO
2
2 GST
3 organism protective materials
4 polishing particles
Embodiment
Below, by specific specific examples explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification sheets.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification sheets also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Notice, processing unit or device concrete not dated in the following example all adopt conventional equipment or the device in this area; All force value and scope all refer to absolute pressure.
Should be understood that in addition that one or more method stepss of mentioning in the present invention do not repel between the step that can also have the additive method step or clearly mention at these before and after described combination step can also insert the additive method step, except as otherwise noted; Will also be understood that, the relation that is connected between one or more equipment of mentioning in the present invention/device is not repelled between two equipment/devices that can also have other equipment/devices or clearly mention at these before and after described clustered aggregates/device can also insert other equipment/devices, except as otherwise noted.And, except as otherwise noted, the numbering of various method steps is only for differentiating the convenient tool of various method steps, but not ordering or the enforceable scope of restriction the present invention for limiting various method steps, the change of its relativeness or adjustment, in the situation that without essence change technology contents, when also being considered as the enforceable category of the present invention.
The invention provides a kind of for phase change material Ge
2sb
2te
5(GST) self-stopping technology chemically machinery polished (CMP) liquid, contain the organism protective material in its polishing fluid, be mainly used in solving in the polishing process of GST pattern piece, because the butterfly that high selectivity causes is cheated.The structure iron of the pattern piece of conventional GST is as shown in 1, and this structural requirement GST is with SiO
2have certain selection ratio, generally, high selection easily causes the formation in butterfly hole than in polishing process, as shown in Figure 2, causes defect to next step technique.For the problem that occurs butterfly hole in GST pattern piece polishing process, the inventor adds a kind of organism protective material in polishing fluid, can form protective membrane on the surface of GST, at the height of GST lower than SiO
2the time, be attached to the surface of GST, play the effect of protection GST, reached and automatically stopped the removal of GST, thereby avoided the formation in butterfly hole.
Organism protective material of the present invention can be attached to the surface of GST in polishing process, and its polishing process as shown in Figure 3.From scheming, we can find out that, in polishing process, organism is attached to the surface of GST, because this organism is easily removed, so this protective material does not have influence on the removal speed of GST.When throwing the GST cross section, the height of GST is during lower than silicon oxide, and organism is attached to the surface of GST, plays the effect of protection GST, and this provide protection has reduced the height in butterfly hole, the i.e. problem of so-called dishing.Its schematic diagram as shown in Figure 4.From scheming, can see in the process of polishing, when the height of GST lower than SiO
2height the time, organism is attached to the surface of GST, protected the removal of GST, thereby has avoided the formation in butterfly hole.Having reached self-stopping technology GST removes.This protective material can not stick to the surface of GST simultaneously, by the process of cleaning, just can remove the protective material that is attached to the GST surface.Oxygenant, tensio-active agent and aqueous medium have also been comprised in this polishing fluid.Realized that speed is controlled simultaneously, reduced surfaceness.
In various embodiments of the present invention, GST pattern piece polishing test condition is as follows:
Instrument: CMP tester (CETR CP-4)
Condition: pressure (Down Force): 3psi
Polishing pad rotating speed (Pad Speed): 100rpm
Rubbing head rotating speed (Carrier Speed): 100rpm
Temperature: 25 ℃
Polishing fluid flow velocity (Feed Rate): 100ml/min
Polishing fluid: the polishing fluid of getting the embodiment gained is tested.
By weight, polishing fluid is composed as follows:
Polishing particles: silicon dioxide gel (30wt%, particle diameter: 100nm): 2 parts;
Oxygenant: hydrogen peroxide (30wt%): 5 parts;
Tensio-active agent: polyoxyethylenated alcohol sodium sulfate: 1 part;
Organism protective material: 0 part;
Aqueous medium: deionized water: 92 parts;
PH value=3(10wt% aqueous nitric acid is adjusted).
The specific configuration process is as follows: first: deionized water is added in the container that configures solution; Second: the amount that adds required hydrogen peroxide by formula in container; The the 3rd: the amount that adds required polyoxyethylene sodium sulfate by formula in container; The 4th: by rare nitric acid debugging pH value to 3 of 10wt%, consumption is about 0.3 weight part; The 5th: add by formula the silicon dioxide gel that solid content is 30wt% in solvent, fully stirring obtains polishing fluid.
The polishing test result as shown in Figure 5.
By weight, polishing fluid is composed as follows:
Polishing particles: silicon dioxide gel (30wt%, particle diameter: 100nm) content: 2 parts;
Oxygenant: hydrogen peroxide (30wt%): 5 parts;
Tensio-active agent: polyoxyethylenated alcohol sodium sulfate: 1 part
Organism protective material: carboxymethyl cellulose: 1 part;
Aqueous medium: deionized water: 91 parts;
PH value=3(10wt% diluted nitric acid aqueous solution is adjusted).
The specific configuration process is as follows: first: deionized water is added in the container that configures solution; Second: the amount that adds required hydrogen peroxide by formula in container; The the 3rd: the amount that adds required polyoxyethylene sodium sulfate by formula in container; The the 4th: by rare nitric acid debugging pH value to 3 of a small amount of 10wt%; The the 5th: by formula, add carboxymethyl cellulose in solvent; The 6th: add the silicon dioxide gel that solid content is 30wt% in solvent, fully stirring obtains polishing fluid.
The polishing test result as shown in Figure 6.
From Fig. 5, with the contrast of Fig. 6, we can draw, do not add organism protectant the time in the GST polishing fluid, and the formation in butterfly hole is arranged after polishing; Polishing fluid after adding does not have the formation in butterfly hole after polishing.Proved in the process of polishing, the organism protective material has played the effect of effective protection GST, thereby has avoided the formation in butterfly hole, has reached the effect of self-stopping technology.
By weight, polishing fluid is composed as follows:
Polishing particles: silicon dioxide gel (30wt%, particle diameter: 120nm) content: 1 part;
Oxygenant: potassium permanganate: 0.1 part;
Tensio-active agent: sodium polyacrylate: 0.05 part
Organism protective material: propenyl thiocarbamide: 0.01 part;
Aqueous medium: deionized water: 85 parts;
PH value=6(28wt% ammoniacal liquor is adjusted).
The specific configuration process is as follows: first: deionized water is added in the container that configures solution; Second: the amount that adds required potassium permanganate by formula in container; The the 3rd: the amount that adds required sodium polyacrylate by formula in container; The the 4th: by 28wt% ammoniacal liquor debugging pH value to 6; The the 5th: by formula, add the propenyl thiocarbamide in solvent; The 6th: add the silicon dioxide gel that solid content is 30wt% in solvent, fully stirring obtains polishing fluid.The polishing test result of the present embodiment gained polishing fluid is close with embodiment 2, can effectively protect GST, avoids the formation in butterfly hole.
By weight, polishing fluid is composed as follows:
Polishing particles: silicon dioxide gel (30wt%, particle diameter: 80nm) content: 6 parts;
Oxygenant: Periodic acid: 4 parts;
Tensio-active agent: aliphatic alcohol polyoxyvinethene phosphate: 2 parts
Organism protective material: thiazolidine thioketones: 0.5 part;
Aqueous medium: deionized water: 95 parts;
PH value=2(10wt% aqueous hydrochloric acid is adjusted).
The specific configuration process is as follows: first: deionized water is added in the container that configures solution; Second: the amount that adds required Periodic acid by formula in container; The the 3rd: the amount that adds desired fats polyoxyethylenated alcohol phosphoric acid ester by formula in container; The the 4th: by 10wt% aqueous hydrochloric acid debugging pH value to 2; The the 5th: by formula, add the thiazolidine thioketones in solvent; The 6th: add the silicon dioxide gel that solid content is 30wt% in solvent, fully stirring obtains polishing fluid.The polishing test result of the present embodiment gained polishing fluid is close with embodiment 2, can effectively protect GST, avoids the formation in butterfly hole.
Embodiment 5
By weight, polishing fluid is composed as follows:
Polishing particles: silicon dioxide gel (25wt%, particle diameter: 80nm) content: 3 parts;
Oxygenant: the Tripotassium iron hexacyanide: 3 parts;
Tensio-active agent: aliphatic alcohol polyoxyvinethene phosphate: 1 part
Organism protective material: sulphosalicylic acid: 0.4 part;
Aqueous medium: deionized water: 90 parts;
PH value=5(10wt% hydroxyethyl diamine aqueous solution is adjusted).
The specific configuration process is as follows: first: deionized water is added in the container that configures solution; Second: the amount that adds the required Tripotassium iron hexacyanide by formula in container; The the 3rd: the amount that adds desired fats polyoxyethylenated alcohol phosphoric acid ester by formula in container; The the 4th: by 10wt% hydroxyethyl diamine aqueous solution debugging pH value to 5; The the 5th: by formula, add sulphosalicylic acid in solvent; The 6th: add the silicon dioxide gel that solid content is 30wt% in solvent, fully stirring obtains polishing fluid.The polishing test result of the present embodiment gained polishing fluid is close with embodiment 2, can effectively protect GST, avoids the formation in butterfly hole.
Embodiment 6
By weight, polishing fluid is composed as follows:
Polishing particles: silicon dioxide gel (35wt%, particle diameter: 80nm) content: 3 parts;
Oxygenant: Periodic acid: 2 parts;
Tensio-active agent: polyoxyethylenated alcohol sodium sulfate: 1 part
Organism protective material: Natvosol: 0.5 part;
Aqueous medium: deionized water: 95 parts;
PH value=3(10wt% diluted nitric acid aqueous solution is adjusted).
The specific configuration process is as follows: first: deionized water is added in the container that configures solution; Second: the amount that adds required Periodic acid by formula in container; The the 3rd: the amount that adds desired fats polyoxyethylenated alcohol sodium sulfate by formula in container; The the 4th: by 10wt% diluted nitric acid aqueous solution debugging pH value to 3; The the 5th: by formula, add Natvosol in solvent; The 6th: add the silicon dioxide gel that solid content is 30wt% in solvent, fully stirring obtains polishing fluid.The polishing test result of the present embodiment gained polishing fluid is close with embodiment 2, can effectively protect GST, avoids the formation in butterfly hole.
Embodiment 7
By weight, polishing fluid is composed as follows:
Polishing particles: silicon dioxide gel (30wt%, particle diameter: 80nm) content: 3 parts;
Oxygenant: hydrogen peroxide (28wt%): 2 parts;
Tensio-active agent: polyoxyethylenated alcohol sodium sulfate: 1 part
Organism protective material: empgen BB: 1 part;
Aqueous medium: deionized water: 90 parts;
PH value=3(10wt% diluted hydrochloric acid aqueous solution).
The specific configuration process is as follows: first: deionized water is added in the container that configures solution; Second: the amount that adds required hydrogen peroxide by formula in container; The the 3rd: the amount that adds desired fats polyoxyethylenated alcohol sodium sulfate by formula in container; The the 4th: by 10wt% diluted hydrochloric acid aqueous solution debugging pH value to 3; The the 5th: by formula, add empgen BB in solvent; The 6th: add the silicon dioxide gel that solid content is 30wt% in solvent, fully stirring obtains polishing fluid.The polishing test result of the present embodiment gained polishing fluid is close with embodiment 2, can effectively protect GST, avoids the formation in butterfly hole.
In sum, the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, be modified or be changed above-described embodiment.Therefore, such as in affiliated technical field, have and usually know that the knowledgeable, not breaking away from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (11)
1. a self-stopping technology chemical mechanical polishing liquid, its raw material by weight, comprises following component:
The scope of the pH value of described self-stopping technology chemical mechanical polishing liquid is 2-6.
2. self-stopping technology chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described self-stopping technology chemical mechanical polishing liquid, and its raw material by weight, comprises following component:
The scope of the pH value of described self-stopping technology chemical mechanical polishing liquid is 2-6.
3. self-stopping technology chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described pH adjusting agent is selected from one or more the mixing in ammoniacal liquor, hydroxyethyl second two ammonia solns, aqueous nitric acid and aqueous hydrochloric acid.
4. self-stopping technology chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described polishing particles is silicon dioxide gel.
5. self-stopping technology chemical mechanical polishing liquid as claimed in claim 1; it is characterized in that, described organism protective material is selected from one or more the mixing in propenyl thiocarbamide, thiazolidine thioketones, sulphosalicylic acid, carboxymethyl cellulose, Natvosol and empgen BB.
6. self-stopping technology chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, the mixing of one or more in described oxygenant chosen from Fe potassium cyanide, potassium permanganate, Periodic acid and hydrogen peroxide.
7. self-stopping technology chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described tensio-active agent is aniorfic surfactant.
8. self-stopping technology chemical mechanical polishing liquid as claimed in claim 8, is characterized in that, described tensio-active agent is selected from one or more the combination in polyoxyethylenated alcohol sodium sulfate, sodium polyacrylate and aliphatic alcohol polyoxyvinethene phosphate.
9. self-stopping technology chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described aqueous medium is deionized water.
10. the preparation method of the described self-stopping technology chemical mechanical polishing liquid of claim as arbitrary as claim 1-9, comprise the steps:
1) by formula, oxygenant is added in aqueous medium, fully stir;
2) by formula, in step 1 gained mixture, add tensio-active agent, after fully stirring, use pH adjusting agent that the pH of mixed solution is adjusted to 2-6;
3) by formula, in step 2 gained mixture, add organic protective agent, fully stir;
4) by formula, in step 3 gained mixture, add polish abrasive, after fully stirring, obtain described self-stopping technology chemical mechanical polishing liquid.
11. the described self-stopping technology chemical mechanical polishing liquid of claim as arbitrary as claim 1-9 is in the application in phase change material polishing field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310447272.1A CN103484025B (en) | 2013-09-25 | 2013-09-25 | Self-stop GST (Ge2Sb2Te5) chemical mechanical polishing solution as well as preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310447272.1A CN103484025B (en) | 2013-09-25 | 2013-09-25 | Self-stop GST (Ge2Sb2Te5) chemical mechanical polishing solution as well as preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103484025A true CN103484025A (en) | 2014-01-01 |
| CN103484025B CN103484025B (en) | 2015-07-08 |
Family
ID=49824639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310447272.1A Active CN103484025B (en) | 2013-09-25 | 2013-09-25 | Self-stop GST (Ge2Sb2Te5) chemical mechanical polishing solution as well as preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103484025B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104403570A (en) * | 2014-11-03 | 2015-03-11 | 中国科学院上海微系统与信息技术研究所 | Double oxidant-containing GST chemical mechanical polishing liquid and preparation method and use thereof |
| CN111662641A (en) * | 2020-06-30 | 2020-09-15 | 中国科学院上海微系统与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030219982A1 (en) * | 2002-05-23 | 2003-11-27 | Hitachi Chemical Co., Ltd | CMP (chemical mechanical polishing) polishing liquid for metal and polishing method |
| US20050205522A1 (en) * | 2000-03-03 | 2005-09-22 | Chartered Semiconductor Manufacturing Ltd. | Chemical agent additives in copper CMP slurry |
| US20090001339A1 (en) * | 2007-06-29 | 2009-01-01 | Tae Young Lee | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
| CN101372606A (en) * | 2008-10-14 | 2009-02-25 | 中国科学院上海微系统与信息技术研究所 | Sulfur compound phase-change material cerium oxide chemico-mechanical polishing solution |
| CN101586005A (en) * | 2009-07-03 | 2009-11-25 | 中国科学院上海微系统与信息技术研究所 | Chemical-mechanical polishing solution for SiSb based phase-changing materials |
| US20100190339A1 (en) * | 2007-07-26 | 2010-07-29 | Zhan Chen | Compositions and methods for chemical-mechanical polishing of phase change materials |
| CN102268224A (en) * | 2010-06-01 | 2011-12-07 | 中国科学院上海微系统与信息技术研究所 | Chemical mechanical polishing liquid with controllable silicon oxide removal rate |
| CN102441819A (en) * | 2011-10-20 | 2012-05-09 | 天津理工大学 | Chemical and mechanical polishing method and solution for sulfur phase-change material |
| CN102516878A (en) * | 2011-12-12 | 2012-06-27 | 上海新安纳电子科技有限公司 | Polishing solution capable of improving surface quality of polished phase transition material |
| CN102516879A (en) * | 2011-12-12 | 2012-06-27 | 上海新安纳电子科技有限公司 | Polishing solution for inhibiting electrochemical corrosion of phase change material |
-
2013
- 2013-09-25 CN CN201310447272.1A patent/CN103484025B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050205522A1 (en) * | 2000-03-03 | 2005-09-22 | Chartered Semiconductor Manufacturing Ltd. | Chemical agent additives in copper CMP slurry |
| US20030219982A1 (en) * | 2002-05-23 | 2003-11-27 | Hitachi Chemical Co., Ltd | CMP (chemical mechanical polishing) polishing liquid for metal and polishing method |
| US20090001339A1 (en) * | 2007-06-29 | 2009-01-01 | Tae Young Lee | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
| US20100190339A1 (en) * | 2007-07-26 | 2010-07-29 | Zhan Chen | Compositions and methods for chemical-mechanical polishing of phase change materials |
| CN101372606A (en) * | 2008-10-14 | 2009-02-25 | 中国科学院上海微系统与信息技术研究所 | Sulfur compound phase-change material cerium oxide chemico-mechanical polishing solution |
| CN101586005A (en) * | 2009-07-03 | 2009-11-25 | 中国科学院上海微系统与信息技术研究所 | Chemical-mechanical polishing solution for SiSb based phase-changing materials |
| CN102268224A (en) * | 2010-06-01 | 2011-12-07 | 中国科学院上海微系统与信息技术研究所 | Chemical mechanical polishing liquid with controllable silicon oxide removal rate |
| CN102441819A (en) * | 2011-10-20 | 2012-05-09 | 天津理工大学 | Chemical and mechanical polishing method and solution for sulfur phase-change material |
| CN102516878A (en) * | 2011-12-12 | 2012-06-27 | 上海新安纳电子科技有限公司 | Polishing solution capable of improving surface quality of polished phase transition material |
| CN102516879A (en) * | 2011-12-12 | 2012-06-27 | 上海新安纳电子科技有限公司 | Polishing solution for inhibiting electrochemical corrosion of phase change material |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104403570A (en) * | 2014-11-03 | 2015-03-11 | 中国科学院上海微系统与信息技术研究所 | Double oxidant-containing GST chemical mechanical polishing liquid and preparation method and use thereof |
| CN111662641A (en) * | 2020-06-30 | 2020-09-15 | 中国科学院上海微系统与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
| CN111662641B (en) * | 2020-06-30 | 2021-10-26 | 中国科学院上海微系统与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103484025B (en) | 2015-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101372606B (en) | Method for polishing sulfur compound phase-change material by cerium oxide chemico-mechanical polishing solution | |
| CN103827235B (en) | A kind of method manufacturing semiconductor device, it is included in the presence of the CMP composition comprising specific organic compound and chemically-mechanicapolish polishes elements germanium and/or Si1-xgexmaterial | |
| CN101586005A (en) | Chemical-mechanical polishing solution for SiSb based phase-changing materials | |
| CN101765647B (en) | Be used for composition and the method for the chemical-mechanical polishing of phase-change material | |
| CN102516878A (en) | Polishing solution capable of improving surface quality of polished phase transition material | |
| US9493677B2 (en) | Polishing composition, method for fabricating thereof and method of chemical mechanical polishing using the same | |
| CN102441819B (en) | Chemical and mechanical polishing method for sulfur phase-change material | |
| TW201311842A (en) | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composition having a pH value of 3.0 to 5.5 | |
| CN102127372A (en) | Nano polishing solution for chemically mechanical polishing of vanadium oxide and application thereof | |
| CN102516879A (en) | Polishing solution for inhibiting electrochemical corrosion of phase change material | |
| CN102268332B (en) | Cleaning liquid for phase change material after polishing | |
| CN101333420B (en) | Chemical mechanical polishing slurry composition and polishing method | |
| WO2010037265A1 (en) | Chemical-mechanical polishing liquid | |
| CN103484025B (en) | Self-stop GST (Ge2Sb2Te5) chemical mechanical polishing solution as well as preparation method and application thereof | |
| CN101935596B (en) | Polishing post-cleaning solution of sulfur series compound phase-change material | |
| CN102690604A (en) | Chemico-mechanical polishing liquid | |
| CN102820223A (en) | Chemical-mechanical polishing method for simultaneously polishing phase-change material and tungsten | |
| CN102559056B (en) | Chemical mechanical polishing liquid for polishing alloy phase change materials | |
| CN104403570B (en) | A kind of GST chemical mechanical polishing liquid comprising dual oxidants and its production and use | |
| CN102945924A (en) | TiSbTe phase-change storage material, preparation method and application thereof | |
| CN103897603A (en) | GST neutral chemical mechanical polishing solution | |
| CN102382575A (en) | Polishing slurry for chalcogenide alloy | |
| CN102816533B (en) | A kind of cmp method for phase-change material | |
| CN102757731A (en) | Polishing solution | |
| Huo et al. | Optimization of slurry and process parameter on chemical mechanical polishing of CR-doped Sb 2 Te 3 thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |