CN103508412A - Encapsulating method of pressure sensor chip and pressure sensor - Google Patents
Encapsulating method of pressure sensor chip and pressure sensor Download PDFInfo
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- CN103508412A CN103508412A CN201310412678.6A CN201310412678A CN103508412A CN 103508412 A CN103508412 A CN 103508412A CN 201310412678 A CN201310412678 A CN 201310412678A CN 103508412 A CN103508412 A CN 103508412A
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Abstract
The invention discloses an encapsulating method of a pressure sensor chip and a pressure sensor. The encapsulating method comprises the following steps: providing a pressure sensor chip, forming a protection layer on an MEMS (micro-electromechanical system) device layer, wherein a welding pad is exposed from the protection layer; forming a sacrificial layer on the protection layer, exposing the welding pad on the sacrificial layer; forming a first metal layer above the welding pad; forming a second metal layer on the first metal layer and the sacrificial layer; etching the second metal layer to form a solder ball on the first metal layer. In the steps of etching the sacrificial layer and a metal interconnection layer, as the protection layer protects a thinner part corresponding to a groove of the induction component, the induction component would not be damaged. Therefore, the reliability of the device is greatly improved, the pressure sensor chip can be encapsulated with BGA (ball grid array), the encapsulation size is reduced, the volume of the device is shortened, the cost is low, and the product is optimized.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of method for packing of pressure sensor chip and device.
Background technology
MEMS (Micro-Electro-Mechanical Systems, MEMS) is that a kind of integrability is produced, and integrates microdevice or the system of micro mechanism, microsensor, miniature actuator and signal processing and control circuit.It is along with semiconductor integrated circuit Micrometer-Nanometer Processing Technology and ultraprecise Machining Technology development get up.The microelectronic component that adopts MEMS technology has very wide application prospect in Aeronautics and Astronautics, environmental monitoring, biomedicine and all spectra that almost people touch.With respect to traditional frame for movement, the size of MEMS device is less, maximum is no more than one centimetre, be even only several microns, device layer thickness is wherein just more small, along with the introducing of semiconductor technology, utilize semi-conducting material and further dwindle with the MEMS chip size that cmos compatible technique is made.Wherein micro mechanical structure is as the most important part of sensing, transmission and motion, so micro mechanical structure is complete reliable, determined function good of MEMS.
After CMOS chip or MEMS chip complete, all to encapsulate.Namely, the circuit pin on chip, with wire, connect and guide to external lug place, to be connected with other device.Packing forms refers to installs the shell that chip is used.It not only plays a part to install, fixes, seals, protects chip and strengthens the aspects such as electric heating property; but also by the contact on chip, be wired on the pin of package casing; these pins are connected with other devices by the wire on printed circuit board (PCB) again, thereby realize being connected of inside chip and external circuit.
At present, the packing forms that CMOS chip is conventional has spherical point contacts array (BGA-ball grid array) and gold thread bonding (WB-Wire Bond).BGA produces spherical salient point in order to replace pin at the back side of substrate by display mode, at the front of substrate assembling chip.Pin can surpass 200, is a kind of encapsulation that many pins are used.The advantage of BGA encapsulation has: input and output pin number increases greatly, and pin-pitch is large, add that it has the auto-alignment function with circuitous pattern, thereby improved assembly yield, thereby electric heating property is improved, the reliable and stable work of circuit.
WB refers to the interface of High Purity Gold bundle of lines chip and the interface bonding of substrate.The shortcoming of WB encapsulation technology is that package dimension is more much larger than bare chip size, and probably than the large 10%-100% of bare chip not etc., the area of bare chip own is less for package area, and WB encapsulation causes the ratio that size increases after encapsulation larger.BGA technology can realize CSP encapsulation (chip scale package), and after bare chip area and encapsulation, area ratio approaches 1:1.BGA technology is that metal ball is planted in the position that chip front side is connected to weld pad, then by chip inverse bonding on substrate, so the metal between chip and substrate connects, do not increase extra area, therefore size and the bare chip size after encapsulation is substantially equal.
Traditional pressure sensor is by two chips, a CMOS chip and a MEMS chip carry out system in package (SIP-System In a Package) and form on a face of same substrate, signal between two chips connects, and need to connect with gold thread, and WB routing connects.Because there are two chips, therefore also cannot use BGA technology, chip cannot plant metal ball and substrate welding with front, again with an other chips welding.Gold thread/copper cash of WB/aluminum steel needs certain camber in addition, so encapsulate can not do very thin, package thickness is also the thinnest also in 1mm left and right.Therefore WB encapsulation causes the encapsulation volume of sensor larger.
Summary of the invention
The technical problem to be solved in the present invention is just to provide a kind of method for packing and pressure sensor of pressure sensor chip, has reduced the package dimension of pressure sensor.
In order to solve the problems of the technologies described above, the invention provides a kind of method for packing of pressure sensor chip, comprise step: a pressure sensor chip is provided, and it comprises cmos circuit layer and be positioned at the MEMS device layer of cmos circuit layer top, on MEMS device layer surface, has weld pad; On described MEMS device layer, form protective layer, described protective layer exposes described weld pad; Above described protective layer, form sacrifice layer, described sacrifice layer exposes the position of described weld pad; Above described weld pad, form the first metal layer; On the first metal layer and described sacrifice layer, form the second metal level; The second metal level described in etching, forms and is positioned at the soldered ball on the first metal layer.
The present invention also provides a kind of pressure sensor in addition, comprising: cmos circuit layer; Be positioned at the MEMS device layer on described cmos circuit layer; Be positioned at the weld pad on described MEMS device layer; On described weld pad, there is the first metal layer; On described the first metal layer, there is soldered ball.
The method for packing of pressure sensor chip of the present invention and pressure sensor are compared with existing pressure sensor: because matcoveredn has been protected the thin location corresponding to groove of inductive means; make like this inductive means injury-free; improved greatly the reliability of device; make pressure sensor chip can utilize BGA encapsulation; thereby reduced package dimension; the volume-diminished that makes device, cost is lower, and product is optimized.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the pressure sensor package method of one embodiment of the invention;
Fig. 2～Fig. 5 is the pressure sensor package method schematic diagram of one embodiment of the invention.
the specific embodiment
Traditional pressure sensor is by two chips, a CMOS chip and a MEMS chip carry out system in package (SIP-System In a Package) and form on a face of same substrate, signal between two chips connects, and need to connect with gold thread, and WB routing connects.Because there are two chips, therefore also cannot use BGA technology, chip cannot plant metal ball and substrate welding with front, again with an other chips welding.Gold thread/copper cash of WB/aluminum steel needs certain camber in addition, so encapsulate can not do very thin, package thickness is also the thinnest also in 1mm left and right.Therefore WB encapsulation causes the encapsulation volume of sensor larger.
In the present invention, utilized the pressure sensor of another patented technology of the applicant, sensor has comprised cmos circuit layer and has been positioned at the MEMS device layer above CMOS at a chip, utilized between cmos circuit layer and MEMS device layer with the interconnection layer of CMOS process compatible and interconnect.For this sensor chip, if utilize W B encapsulation to have equally the problem that encapsulation volume is larger, utilize traditional BGA encapsulation to have the problem that the exposed MEMS device of top layer is caused to damage.
For the problems referred to above, after inventor studies, obtained the method for packing of pressure sensor of the present invention, the schematic flow sheet of the pressure sensor package method that Fig. 1 is one embodiment of the invention, as shown in Figure 1, it comprises the following steps:
S10 a: pressure sensor chip is provided, and it comprises cmos circuit layer and be positioned at the MEMS device layer of cmos circuit layer top, has weld pad on MEMS device layer surface;
S20: form protective layer on described MEMS device layer, described protective layer exposes described weld pad;
S30: form sacrifice layer above described protective layer, described sacrifice layer exposes the position of described weld pad;
S40: form the first metal layer above described weld pad;
S50: form the second metal level on the first metal layer and described sacrifice layer;
S60: the second metal level described in etching, forms and be positioned at the soldered ball on the first metal layer.
Fig. 2～Fig. 4 is the pressure sensor package method schematic diagram of one embodiment of the invention, below in conjunction with Fig. 1 to Fig. 4, the pressure sensor package method of one embodiment of the invention is elaborated.
First with reference to figure 2, provide a pressure sensor chip 100, the MEMS device layer 120 that it comprises cmos circuit layer 110 and is positioned at cmos circuit layer 110 top, has weld pad 130 on MEMS device layer 120 surfaces.
In the present embodiment, concrete, MEMS device layer 120 is the effects that realize pressure sensitive, therefore comprise inductive means 121, inductive means 121 is suspended on cavity 122, edge is by being pressed on the substrate of cavity 122 sidewalls, the part that inductive means 121 is suspended on cavity 122 has the first electrode 123, in the substrate of cavity 122 bottoms, there is the second electrode 124, the first electrode 123 and the second electrode 124 correspondences, form electric capacity, the effect that is subject to external pressure when inductive means 121 is when moving perpendicular to substrate surface direction, the first electrode 123 and the second electrode 124 relative motions, between distance change, thereby the electric capacity between the first electrode 123 and the second electrode 124 changes, further just can measure the value of external pressure.
In order to guarantee the accuracy of pressure test, inductive means 121 is conventionally very thin, just has so under external force good ductility, and sensitiveer to the induction of pressure.In order to increase sensitivity inductive means 121 by the part being pressed on the substrate of cavity sidewalls, namely inductive means 121 is wanted the very thin of etching near a circle of cavity sidewalls, from Fig. 2, can see at inductive means 121 and have groove 128 near a circle of cavity sidewalls, inductive means 121 is responsive for the induction of pressure like this.In the present embodiment, the position that this groove 128 makes inductive means 121 be connected with substrate becomes very thin.
Traditional pressure sensor consists of CMOS chip and two chips of MEMS device chip, and a kind of method is to be arranged on the same surface of substrate, utilizes the packaged type of WB to encapsulate connection.Another kind method is that CMOS chip and MEMS chip-stack are bonded together, and utilizes the packaged type of WB to be connected on substrate.But the packaged type of WB makes encapsulation volume very large, and because the inductive means of pressure sensor is to be exposed to outside cavity, and be positioned at cavity top, the part being connected with substrate has again groove 128, therefore if with the packaged type of BGA, can cause damage to the position of groove, thereby the inductive means of pressure sensor was lost efficacy.
Then with reference to figure 3, in the present embodiment, on MEMS device layer 120 and weld pad 130, form passivation layer 135.Concrete, the method that forms passivation layer 135 can be: chemical vapor deposition.This passivation layer 135 can be protected the surface of device, reduces the damage being subject in technical process.But because of passivation layer, finally do not remove, therefore very thin, can not filling groove 128.
Continuation, with reference to figure 3, in the present invention in order to apply BGA encapsulation technology, improves original BGA method for packing, has increased step S20, on described MEMS device layer 120, forms protective layer 140, and described protective layer 140 exposes described weld pad.Protective layer 140 filling grooves 128.Inductive means 121 compare Bao region to these groove 128 correspondences is protected.
In the present embodiment, the method that forms protective layer 140 is: spin coating mode, first polyamide or photoresist are dropped in to crystal column surface home position, and then, by High Rotation Speed wafer mode, polyamide or photoresistance are coated in to crystal column surface uniformly.Spin-on material viscosity is 0.1 milli Pascal. second is to 500 milli Pascals. second, spin-on material is sprayed onto crystal column surface from specific nozzle, the internal diameter of nozzle can be at 1um to 2000um, the pressure of nozzle can be at 1.1Bar～5Bar, spin coating speed is 300 revolutions per seconds to 2000 revolutions per seconds, after polyamide or photoresistance gluing, through a low-temperature bake by adhesive curing, temperature is probably at 100-160 ℃, enter again afterwards litho machine, polyamide or photoresistance are exposed by design layout, again the wafer after exposure being put into developer solution soaks, remove unwanted polyamide or photoresistance, for our Zhe road technique, remove exactly polyamide or the photoresistance on weld pad surface.Finally carry out one time high-temperature baking, patterned polyamide or photoresistance is stable, and temperature is probably at 250-400 ℃ again.Because protective layer 140 is that MEMS device is played a protective role, it covers MEMS device, therefore the manufacture craft of this protective layer 140 is directly related with the sensitivity of MEMS device, if manufacture craft is selected the improper effect that does not only have protection MEMS device, damage on the contrary MEMS device, and the protective layer 140 that may form is difficult for removing, in removing again, exist residual, or the one-tenth of removing causes MEMS device damage, these all can impact effect, therefore inventor passes through careful experimental study in the present embodiment, obtained above-mentioned process, the protective layer 140 forming is easily removed, and can not cause damage by MEMS device, effectively protected the device at the MEMS of BGA manufacturing process, the sensor accuracy that this MEMS device is formed improves greatly, and reduced cost.
In the present embodiment, on protective layer 140, form metal interconnecting layer 150.Concrete formation method is the method for chemical vapor deposition or physical vapor deposition, forms metal nickel dam, layer of titanium metal or NiTi mixed layer.
In another embodiment, can not form metal interconnecting layer yet, require like this position of weld pad and the position of BGA soldered ball corresponding one by one mutually, for example the BGA method for packing of the mode of chemistry does not just form metal interconnecting layer.
Continuation, with reference to figure 3, forms sacrifice layer 160 above described protective layer 140, and described sacrifice layer 160 exposes described weld pad 130 position.In the present embodiment, owing to being formed with metal interconnecting layer 150 on protective layer 140, so sacrifice layer 160 covers on metal interconnecting layer 150.Described sacrifice layer 160 covers corresponding described protective layer 140 position on metal interconnecting layer 150.This sacrifice layer 160 forms soldered ball after for follow-up removal.
Sacrificial layer material can be carbon, germanium or polyamide (polyamide).That concrete can be amorphous carbon (Amorphous Carbon), utilize plasma enhanced chemical vapor deposition (PECVD) technique to form, in temperature, it is 350 ℃～450 ℃, air pressure: 1torr～20torr, RF power: 800W～1500W, reacting gas comprises: C3H6 and HE, reaction gas flow is 1000sccm～3000sccm, wherein C3H6:HE2:1～5:1.
In the present embodiment, described sacrifice layer 160 exposes the metal interconnecting layer 150 of described weld pad 130 peripheries, and the opening of being convenient to like this sacrifice layer 160 exposes weld pad 130 more fully.
In another embodiment, can on protective layer 140, not form metal interconnecting layer 150, therefore described sacrifice layer 160 is just formed directly on protective layer 140.
Continuation, with reference to figure 3, forms the first metal layer 170 above described weld pad 130.
In the present embodiment, owing to being formed with metal interconnecting layer 150 on weld pad 130, so the first metal layer 170 is formed on metal interconnecting layer 150, corresponding to the position of weld pad 130 tops.Concrete, formation method is: the method for chemical vapour deposition or physical vapor deposition, and utilize mask to block figure, form metal lead layer, metallic zinc layer or plumbous zinc mixed layer.
Described the first metal layer 170 covers the metal interconnecting layer 150 that described sacrifice layer 160 exposes, form and metal interconnecting layer 150 between metal interconnected.Described the first metal layer 170 is used to form weld pad 130/ metal interconnecting layer 150 and afterwards, and the congruent melting between the soldered ball of formation, makes the more firm of soldered ball and chips incorporate.
In another embodiment, can utilize chemical method to form the first metal layer, specifically can, with reference to the chemical method of traditional fabrication BGA, repeat no more.
Continuation, with reference to figure 3, forms the second metal level 180 on the first metal layer 170 and described sacrifice layer 160.
In the present embodiment, the second metal level 180 is the final metal level that forms welded ball array, and concrete formation method is: the method for chemical vapor deposition or physical vapor deposition, utilize mask pattern, and form the plumbous mixed layer of metallic tin layer, metal lead layer or tin.Also can after forming the second metal level, carry out etching, obtain covering weld pad top and the second peripheral metal level 180.
Can utilize in another embodiment chemical method to form the second metal level, specifically can, with reference to the chemical method of traditional fabrication BGA, repeat no more.
With reference to figure 4: the second metal level 180 described in etching, retains and cover the first metal layer 170 and the second peripheral metal level 180 thereof.
In the present embodiment, specifically can also be divided into three step etchings:
First step etching sacrificial layer 160, method can be removed (Asher) with oxygen gas plasma ashing, and adopting heating-up temperature is 100 ℃～350 ℃.
Second step etching metal interconnecting layer 150, method is: the method for plasma etching.
In the step of etching metal interconnecting layer 150; can first do mask layer; the metal interconnecting layer 150 of protection weld pad 130 tops; because BGA soldered ball is one to one with weld pad above weld pad in the present embodiment; do not need the metal interconnected connection weld pad of extra formation and soldered ball, so etching metal interconnecting layer 150 can all be removed the metal interconnecting layer beyond weld pad top.Certainly also can not form metal interconnecting layer in other embodiments, form in the present embodiment metal interconnecting layer benefit and be and existing BGA process compatible.
The 3rd step etching protective layer 140, method is: with organic chemistry medicament, soak and remove, the medicament ST-44 providing such as ATMI manufacturer etc., also can remove (Asher) with oxygen gas plasma ashing, and adopting heating-up temperature is 100 ℃～350 ℃.
Finally, with reference to figure 5, the 3rd metal level 180 is carried out to etching, for example, heat and make the metal of the 3rd metal level be molten state refluence, thereby form the ball-type soldered ball that covers remaining the first metal layer and metal interconnecting layer.
In other embodiments, also can be not to sacrifice layer, the first metal layer, protective layer, the second metal level carries out successively etching, but directly in same step, carries out etching, and the sacrifice layer protective layer that retains the second metal level below is not removed.
In addition the present invention also provides the pressure sensor that above-mentioned method for packing obtains, and with reference to figure 5, comprising: cmos circuit layer 110; Be positioned at the MEMS device layer 120 on described cmos circuit layer 110; Be positioned at the weld pad 130 on described MEMS device layer 120; On described weld pad 130, there is the first metal layer 170; On described the first metal layer 170, there is soldered ball 180.Optionally, between described weld pad 130 and described the first metal layer 170, there is metal interconnecting layer 150.
In the present invention in the step of etching sacrificial layer and metal interconnecting layer; because matcoveredn 140 has been protected the thin location of groove 128 correspondences of inductive means 121; make exposed MEMS top device injury-free; be that inductive means 121 is injury-free, improved greatly the reliability of device, make pressure sensor chip can utilize BGA encapsulation; thereby reduced package dimension; the volume-diminished that makes device, cost is lower, and product is optimized.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (8)
1. a method for packing for pressure sensor chip, its feature in, comprise step:
One pressure sensor chip is provided, and it comprises cmos circuit layer and is positioned at the MEMS device layer of cmos circuit layer top, on MEMS device layer surface, has weld pad;
On described MEMS device layer, form protective layer, described protective layer exposes described weld pad;
Above described protective layer, form sacrifice layer, described sacrifice layer exposes the position of described weld pad;
Above described weld pad, form the first metal layer;
On the first metal layer and described sacrifice layer, form the second metal level;
The second metal level described in etching, forms and is positioned at the soldered ball on the first metal layer.
2. method for packing as claimed in claim 1, is characterized in that, the material of described protective layer is polyamide or photoresist.
3. method for packing as claimed in claim 2, is characterized in that, described protective layer formation method is:
First polyamide or photoresist are carried out to spin coating;
Baking for the first time at 100-160 ℃;
The spin-on material of bond pad locations top is removed;
Then baking for the second time at 250-400 ℃.
4. method for packing as claimed in claim 1, is characterized in that, also comprises before forming sacrifice layer step: on described protective layer and weld pad, form metal interconnecting layer on described protective layer;
Described sacrifice layer is positioned at the position of corresponding described protective layer on metal interconnecting layer;
Described the first metal layer is positioned at the position of corresponding described weld pad on described interconnecting metal layer.
5. method for packing as claimed in claim 4, is characterized in that, described sacrifice layer exposes the metal interconnecting layer of described weld pad periphery, and described the first metal layer covers the metal interconnecting layer that described sacrifice layer exposes.
6. method for packing as claimed in claim 4, is characterized in that, described in formation the second metal level step and etching, between the second metal level step, is also comprising:
First step etching is removed sacrifice layer;
Second step etching is removed the metal interconnecting layer that the sacrifice layer before being removed is covered;
The 3rd step etching is removed protective layer.
7. method for packing as claimed in claim 6, is characterised in that, the method for removing described protective layer is: organic chemistry medicament soaks to be removed or removes with oxygen gas plasma ashing.
8. the pressure sensor that the method for packing of claim 1 obtains, its feature in, comprising:
Cmos circuit layer;
Be positioned at the MEMS device layer on described cmos circuit layer;
Be positioned at the weld pad on described MEMS device layer;
On described weld pad, there is the first metal layer;
On described the first metal layer, there is soldered ball.
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Effective date of registration: 20230609 Address after: 323000 room 307, block B, building 1, No.268 Shiniu Road, nanmingshan street, Liandu District, Lishui City, Zhejiang Province Patentee after: Zhejiang Core Microelectronics Co.,Ltd. Address before: Room 501B, Building 5, 3000 Longdong Avenue, Zhangjiang High-tech Park, Pudong New Area, Shanghai, 201203 Patentee before: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. |