CN103511874A - Light source and reflection-type optical element - Google Patents
Light source and reflection-type optical element Download PDFInfo
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- CN103511874A CN103511874A CN201210227149.4A CN201210227149A CN103511874A CN 103511874 A CN103511874 A CN 103511874A CN 201210227149 A CN201210227149 A CN 201210227149A CN 103511874 A CN103511874 A CN 103511874A
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Abstract
The invention discloses a light source and a reflection-type optical element. According to at least one mode of execution, the semiconductor light source (1) comprises a base (2) and a plurality of light-emitting semiconductor devices (3), and the light-emitting semiconductor devices (3) are installed on a support top face (20) and is provided with main emitting directions (M) intersectant with the support base top face (20). The reflection-type optical element (4) comprises a central part (41), and the semiconductor devices (3) are located around the center part in the vertical view. In addition, the reflection-type optical element (4) further comprises a top (42) which has the average diameter larger than that of the central part (4). The reflection-type optical element (4) comprises a main reflection surface (43) facing toward the semiconductor devices (3). The main reflection surface (43) is formed in a biconcave mode in at least one cross section view perpendicular to the support top face (20).
Description
Technical field
A kind of light source is provided.In addition, provide a kind of reflection type optical element for this light source.
Summary of the invention
The object that will realize is to provide a kind of reflection type optical element that can easily be operated that is used in particular for display.
Especially, by realizing this object according to the light source of independent claims and reflection type optical element.Provided in the dependent claims other preferred embodiment.
According at least one embodiment, light source is semiconductor light sources.This can represent that light source sends is only produced by luminous semiconductor device.Can realize this device by light emitting diode (being called for short LED).
According at least one embodiment, light source comprises one or more bearings.Described bearing comprises bearing end face.Preferably, with planar fashion, form bearing end face.Bearing can be circuit board or printed circuit board (PCB).Bearing can comprise electric conductor rail and for being electrically connected to the electric contact area of light source and electric drive light source.
According at least one embodiment, light source comprises a plurality of luminous semiconductor devices.Semiconductor devices is installed on bearing end face.Semiconductor devices has main transmit direction.Described main transmit direction is oriented in bearing end face and intersects in the direction of (transverse with).Especially, main transmit direction is perpendicular to bearing end face.
According at least one embodiment, light source also comprises reflection type optical element." reflection type optical element " can refer to optical element mainly or ad hoc by reflecting rather than by refraction work.Especially, reflection type optical element can be used as nonplanar specular reflective mirrors.Semiconductor light sources can comprise just what a reflection type optical element or a plurality of this optical element.
According at least one embodiment, reflection type optical element is positioned on bearing.This can refer to that optical element directly or is indirectly fixed on another part of bearing end face or bearing.Optical element can be positioned near bearing end face or can contact bearing end face.
According at least one embodiment, optical element comprises middle body.For example, middle body comprises fixture or the aligning parts for optical element is fixed and/or aimed at bearing on bearing.Especially, middle body can be optical element so as to being fixed to the unique part on another part of light source.Also may middle body be that light source is so as to being fixed to unique part of shell or the external circuit board.
According at least one embodiment, especially, in the top view towards described bearing end face, semiconductor devices is positioned at around middle body, and is relevant to the plane being limited by described bearing end face.Especially, semiconductor devices can be with regular arrangement the middle body around optical element.
In the top view towards described bearing end face, must not get rid of following situation, some part that is not arranged in the plane being limited by bearing end face of middle body and/or near some part not being positioned at bearing end face can be overlapping with semiconductor devices.
According at least one embodiment, optical element comprises top.(following) middle body is followed along the main transmit direction of semiconductor devices in top.The division of top and middle body is conceivable.Therefore,, about middle body and top, optical element can be formed integral body.Preferably, between middle body and top, there is no boundary layer.Preferably, top is along following middle body away from the direction of bearing end face.
According at least one embodiment, top has the average diameter larger than middle body.In addition, top can have the average diameter larger than the ultimate range between semiconductor devices.
According at least one embodiment, semiconductor devices is between bearing and optical element.In top view, this can represent that semiconductor devices is fully covered by optical element, preferably by the top of optical element, is covered.In addition,, in upward view, this can represent that semiconductor devices is fully covered by bearing.
According at least one embodiment, optical element comprises principal reflection surface.Principal reflection surface is in the face of semiconductor devices, and therefore, principal reflection surface also can faces seat end face.Principal reflection surface can be extended on middle body and top, preferably extends continuously.
As mentioned above, optical element splits into top and middle body can be imagined.In order to define, for example, can define, top starts from 20% place of the total height of optical element.Another possible definition can start in following position at Shi， top: wherein, principal reflection surface falls into below 65 ° first with respect to the inclination angle of the plane being limited by bearing end face.
According at least one embodiment, principal reflection surface forms at least one viewgraph of cross-section perpendicular to bearing end face concave-concave.Especially, optical element be arranged in more than bearing end face half space along the main transmit direction concave-concave of semiconductor devices form.Therefore,, in described cross-sectional view, reflection type optical element can form picture mushroom or a pair of wing.
In at least one embodiment, semiconductor light sources comprises at least one bearing with bearing end face.In addition, light source comprises a plurality of luminous semiconductor devices that are arranged on bearing end face and have the main transmit direction intersecting with bearing end face.Preferably, the reflection type optical element of light source is positioned on bearing.Optical element comprises middle body.In the top view towards described bearing end face, semiconductor devices is positioned at around middle body, and is arranged in the plane at bearing end face place.In addition, optical element comprises the top that follows hard on middle body along the main transmit direction of semiconductor devices.Top has the average diameter larger than middle body, and preferably, top has the average diameter larger than the ultimate range between semiconductor devices.Semiconductor devices between bearing and optical element, particularly, between bearing and the top of optical element.Optical element comprises the principal reflection surface in the face of semiconductor devices.Extend on middle body and top on principal reflection surface.In at least one viewgraph of cross-section perpendicular to bearing end face, concave-concave ground, principal reflection surface forms.
The aligning that this reflection type optical element can be easily attached to bearing and optical element can be simplified.Therefore, can reduce the manufacturing cost of this semiconductor light sources.
According at least one embodiment, according to formula below, form principal reflection surface:
h(r)=[q(r-0.5d)]
0.5+h
0
In the one or more viewgraph of cross-section perpendicular to bearing end face, can apply described formula.In addition, described formula relates to column coordinate (cylinder coordinate).Therefore, r be and the optical axis of optical element between distance.Q is greater than 0 real number.H
0it is offset height.D is that the middle body seen in corresponding cross-sectional view is at the diameter at bearing end face place.Above-mentioned formula is specifically applicable to the situation of r >=0.5d.In addition, for example, described formula is 0.25d at the most or 0.1d or be effective during 0.05d at the most at the most in tolerance.
According at least one embodiment, it is mirror image symmetry that semiconductor light sources forms the optical axis about optical element in the one or more cross-sectional views perpendicular to bearing end face.
According at least one embodiment, principal reflection surface symmetrically forms, and wherein, optical axis is rotating shaft.
According at least one embodiment, principal reflection surface and/or top reflecting surface are smoothly and the face that divides of at least twice continuously differentiable.As an alternative, principal reflection surface can by have at the most 0.5mm or at the most the face of the tolerance of 0.2mm be similar to.
Preferably, in fabrication tolerance, in the direction away from optical axis, the symbol of the curvature on principal reflection surface does not change.Therefore, the second dervative on principal reflection surface does not change its symbol.
According at least one embodiment, optical element comprises a plurality of perforation.Perforation can be the through hole forming in optical element.Perforation is designed to make a part of radiation of being launched by semiconductor devices to pass through.
According at least one embodiment, in the top view towards described bearing end face, perforation is not located immediately at semiconductor devices top.In other words, in top view, between perforation and semiconductor devices, there is laterally offset.
According at least one embodiment, semiconductor light sources comprises the first perforation and the second perforation.Concrete, in top view, the second perforation has the average diameter larger than the first perforation.The first perforation can be arranged in middle body and/or top.The second perforation can be arranged in the top of optical element.Therefore, the first perforation can be nearer apart from bearing end face than the second perforation.
According at least one embodiment, along peripheral direction, the first perforation is with respect to the second perforation displacement.In other words, on the optical axis through optical element and the straight line through the first center of boring a hole, the second perforation is then the first perforation.In other words, the first perforation and the second perforation have skew in peripheral direction.
According at least one embodiment, biperforate average diameter be top maximum gauge at least 2.5% or at least 5% or at least 7%.In addition or as an alternative, biperforate average diameter be top maximum gauge at the most 20% or at the most 15% or at the most 12.5%.
According at least one embodiment, first perforation average diameter be top maximum gauge at least 0.5% or at least 0.75% or at least 0.9%.The average diameter of the first perforation can be top maximum gauge at the most 6% or at the most 4% or at the most 2%.Can in the top view towards described bearing end face, measure the diameter at the first perforation and the second perforation and top.
According at least one embodiment, in the top view towards described bearing end face, semiconductor devices is along immediately the first perforation of radial direction.In other words, the optical axis of at least one first perforation at least one semiconductor devices in semiconductor devices, the first perforation and optical element can be point-blank.
According at least one embodiment, the quantity of the first perforation and/or the quantity of biperforate quantity and/or semiconductor devices are at least 3 or at least 4.In addition or as an alternative, the quantity of quantity, biperforate quantity and/or the semiconductor devices of the first perforation is 8 or 6 at the most at the most.For example, described quantity is lucky 4 or lucky 5 or lucky 6.
According at least one embodiment, optical element comprises top reflecting surface.Top reflecting surface is towards the direction of leaving semiconductor devices.Preferably, top reflecting surface is similar to the form on principal reflection surface.In other words, top reflecting surface and principal reflection surface can form similarly.
According at least one embodiment, top reflecting surface and/or principal reflection surface are provided with a plurality of facets.Can make described facet separated from one another by edge or by changing the symbol of curvature.Can fully cover top reflecting surface by facet.As an alternative, can only the part on top reflecting surface and/or principal reflection surface be configured to facet-structure.An only reflecting surface that can make principal reflection surface and top reflecting surface be provided with in this facet or principal reflection surface and top reflecting surface is configured to make facet-structure.
According at least one embodiment, the average diameter of facet be top maximum gauge at least 0.25% or at least 0.5% or at least 0.8%.The average diameter of facet can be top maximum gauge at the most 5% or at the most 3.5% or at the most 2.5%.
According at least one embodiment, semiconductor light sources forms in modular mode.For example, by proper what a bearing, by be installed to semiconductor devices on described bearing and by follow described semiconductor devices preferably just what a reflection type optical element form module.It is possible that module is processed as a whole.In other words, bearing, semiconductor devices and corresponding optical element can mechanically be connected to each other with forming unit.In the desired use of semiconductor light sources, described unit is without separating into separated part.
According at least one embodiment, semiconductor light sources comprises that quantity is at least 2 or at least 3 or at least 4 s' module.As an alternative or in addition, light source can comprise at the most 15 or 12 or 8 modules at the most at the most.For example, light source comprises just in time 3 or just in time 6 or 8 modules just in time.All semiconductor devices of light source can be parts for module.
According at least one embodiment, light source is designed to the back light system of display.For example, light source is used to LCD(liquid crystal display) TV.So, the average transverse of light source can surpass 300mm or 400mm or 500mm.
According at least one embodiment, light source designed to be used general lighting.For example, special, light source can be implemented as pendent lamp or the ceiling light with sizable light-emitting area.
According at least one embodiment, semiconductor devices is arranged to optical element at a distance of certain distance.In other words, not contact reflex of semiconductor devices formula optical element.
According at least one embodiment, optical element is not hit in a part of radiation of being launched by semiconductor devices.For example, the radiation of a described part be equivalent to global radiation that semiconductor devices sends during operation 10% and 40% between or between 15% and 30%.
According at least one embodiment, at top view, module has star or criss-cross emission characteristics.At top view, this can represent that the radiation that is transmitted into two different directions can differ at least 20% or at least 40% or at least 50% of maximum intensity.For example, just in time 4 or just in time 5 or just in time in 6 directions, there is local maximum intensity.The corresponding a large amount of local maximums of quantity of the local minimum aspect strength characteristics.
According at least one embodiment, the maximum gauge of the maximum gauge at the possible corresponding top of optical element is at least 40mm or at least 60mm.Maximum gauge can be 120mm or at the most 100mm at the most.
According at least one embodiment, the minimum diameter of middle body is at least 5mm or at least 10mm or at least 12mm.In addition or as an alternative, the minimum diameter of middle body is 40mm or 30mm or at the most 20mm at the most at the most.
According at least one embodiment, the height of optical element between 10mm and 50mm, comprise 10mm and 50mm or between 18mm and 38mm, comprise 18mm and 38mm.
According at least one embodiment, the average distance between adjacent semiconductor devices is at least 15mm or at least 20mm.Average distance can be also 50mm or 40mm or at the most 35mm at the most at the most.
According at least one embodiment, principal reflection surface and optical element comprise focal line.Semiconductor devices is positioned on focal line or near focal line, for example, have 7mm or the at the most tolerance of 5mm at the most.This can be illustrated in, and the first semiconductor devices in approximate can be counted as spot light and the light that sent by described spot light forms to be similar to the light of collimated light beam.
Reflection type optical element is also provided.Especially, as described in conjunction with one or several aforementioned embodiments, this reflection type optical element can be included in light source.Therefore, also disclose for the feature of the light source of reflection type optical element and also disclose the feature for the reflection type optical element of light source.
In at least one embodiment, reflection type optical element is designed to semiconductor light sources and comprises middle body and top.Middle body is followed along the optical axis of optical element in top.Extend on middle body and top on the principal reflection surface of optical element.Top has the average diameter larger than middle body.In half space in the installation level of optical element and in being parallel to optical axis and attempting through at least one cross section of optical axis, concave-concave ground, principal reflection surface forms.
Accompanying drawing explanation
Preferred embodiment and in the development of light source and the example embodiment of the development of reflection type optical element below in conjunction with accompanying drawing description become clear.
In example embodiment and figure, similarly the parts of parts or similar composition are provided with identical Reference numeral.Element shown in figure and size relationship each other should not be considered to true ratio.But, for better representability and/or for better understanding, can represent discrete component by the size of amplifying.
In the drawings:
Figure 1A-1B, 2A-2B, 5,6A-6B, 8,10A and 10B show the example embodiment of light source described herein;
Fig. 3 A-3B and 4A-4D show the characteristics of luminescence of light source described herein;
Fig. 7 shows the perspective view of reflection type optical element described herein, and
Fig. 9 A and 9B show the remodeling of light source.
Wherein, description of reference numerals is as follows:
1 light source
2 bearings
20 bearing end faces
3 luminous semiconductor devices
4 reflection type optical elements
The middle body of 41 optical elements
The top of 42 optical elements
The principal reflection surface of 43 optical elements
The top reflecting surface of 44 optical elements
45 perforation
46 facets
47 perforation faces
48 aligning parts
5 backboards
6 optical sheets stacking
10 modules
The light source of 91 changes
The optical element of 94 changes
The optical axis of A optical element
D middle body is at the diameter at bearing end face place
F focal line
The intensity that I is unit with arbitrary unit (a.u.) or the nit (nit) of take
The direction of main light emission of M semiconductor devices
R radiation
R is to the distance of optical axis
The angle of αYi Duwei unit
The specific embodiment
The example embodiment of semiconductor light sources 1 has been shown, referring to the sectional view in Figure 1A and the top view in Figure 1B in Fig. 1.
In addition, there is the reflection type optical element 4 being installed on bearing 2.Optical element 4 comprises middle body 41He top 42.Middle body 41 is positioned near bearing 2.Middle body 41 is followed along the main transmit direction M of semiconductor devices 3 in top 42.Main transmit direction M is perpendicular to bearing end face 20.Middle body 41He top 42 forms integral body.
Extend on both at middle body 41He top 42 on principal reflection surface 43.Principal reflection surface 43 is smooth surfaces.From cross-sectional view, principal reflection surface 43 forms as wing and is symmetrical about the optical axis A mirror image of optical element 4.As seen in Figure 1B, optical element 4 forms rotational symmetric.Therefore, rotating shaft is optical axis A.
Towards the top reflecting surface 44 that leaves semiconductor devices 3 directions, comprise a plurality of facets 46.Top reflecting surface 44 is similar to the geometry on principal reflection surface 43.Therefore, optical element 4 can have the almost sidewall of constant thickness.As in every other embodiment, top reflecting surface 44 can be not have faceted smooth surface.Optionally, principal reflection surface 43 can comprise facet (not shown).
From top view, bearing 2 can be rectangular form.Four semiconductor devices 3 are positioned near the corner of bearing 2.Except shown, from top view, for example, bearing 2 can be also circular form.Preferably, bearing end face 20 forms reflecting surface, and this is also possible in the every other embodiment of light source 1.
In each case, perforation 45a, 45b has at least one perforation face 47.As the same with top reflecting surface 44 in principal reflection surface 43, perforation face 47 also can form in mirror-reflection mode.
From top view, perforation 45a, 45b are directly formed at semiconductor devices 3 tops.In each case, optical axis A, two the first perforation 45a and two semiconductor devices 3 are arranged point-blank.The second perforation 45b is not positioned on described straight line, but is offset and arranges along peripheral direction.
In Fig. 2, with perspective representation, show other example embodiment.According to the light source 1 of Fig. 2 A, comprise three modules 10, for example disclosed in conjunction with Fig. 1.These three modules 10 are arranged on backboard 5.Preferably, backboard 5 forms in reflection mode and comprises conductor rails (not shown).Optionally, backboard 5 can have along lateral fully around the fringe region that is positioned at the rising of the module 10 on backboard 5.According to Fig. 2 B, light source 1 only comprises a module 10 being arranged on backboard 5.
For example, according to Fig. 2 A and 2B, back light system and backboard 5 have in the y-direction the approximately length of 700mm and the in the x-direction length of about 400mm.As in every other example embodiment, in each case, along the lateral dimensions of these directions x, y can be between 300mm and 1500mm, comprise 300mm and 1500mm.
In Fig. 3, show the spatial character of the radiation of being sent by light source 1 or module 10.According in the cross-sectional view of Fig. 3 A, show a plurality of ray R of radiation.The major part of the radiation of being sent by semiconductor devices 3 is hit optical element 4 and is reflected as along the almost parallel light beam away from the direction of optical element 4.Therefore, semiconductor devices 3 be arranged in optical element 4 focal line f or near.The partial radiation being sent by semiconductor devices 3 does not arrive reflection type optical element 4.
In Fig. 3 B, show the radiation characteristic of seeing from top view.The intensity I of sending along angle [alpha] is standardized as and in angle [alpha], is 0 ° to locate be maximum intensity.According to Fig. 3 B, the intensity I of sending at different angles α place is higher, and described data point is more away from the optical axis A that is expressed as center in Fig. 3 B.Therefore,, from top view, radiation characteristic is configured as symmetrical cross.In each case, radiation characteristic has four local maximums with about 90 ° of displacements.
In Fig. 4, show another expression of radiation characteristic.In Fig. 4 A, the tonal gradation that the brightness unit of being mapped as is nit, it can be in comparison with the grade in Fig. 4 D.In Fig. 4 B and 4C, show radiation characteristic along x direction with along the cross-sectional view of y direction.Radiation pattern is quite uniform.For example, radiation characteristic is about as the light source of describing in Fig. 2 A.
Another example embodiment of light source has been shown with cross-sectional view in Fig. 5.In Fig. 5, given prominence to the partial radiation R being sent by semiconductor devices 3 and passed perforation 45a, 45b.
With reference to as the perspective representation of optical element given in Fig. 74, referring to Fig. 5, some radiation that penetrate perforation 45a, 45b hit can in top reflecting surface 44 and so hit facet 46.By means of facet 46, the positive Uniform Illumination of display also can arrive in the region that is located immediately at reflection type optical element 4 tops.
In Fig. 6 A and 6B, showing the common of optical element 4 may size.For example, the dimension D 1 of the height of corresponding optical element 4 is about 27mm.The maximum dimension D 2 of optical element 4 can be about 80mm.Dimension D 3, D4 are corresponding to the average distance of the adjacent semiconductor device 3 representing by square symbol in Fig. 6 B.Dimension D 3, D4 can be both about 25mm.
In Fig. 8, show the schematic cross section of the other example embodiment of light source 1.For example, module 10 can be configured to as in conjunction with illustrated in fig. 1.The radiation R being sent by module 10 arrives stacking 6 of optical sheet.Stacking 6 can comprise that one or more diffusion layers are to strengthen the uniformity of the radiation of being sent by light source 1.In addition, stacking 6 can comprise one or more prism paper tinsel, and prism paper tinsel is also known as brightness enhancement film, are called for short BEF.In Fig. 8, with simplified way, drawn stacking 6.
In Fig. 9 A, with upward view, show change light source 91 stereo representation and in conjunction with Fig. 9 B, show the layout of the light source 91 of this change.Refraction type optical element 94 forms the lens on bottom surface with perforation or facet.
For the back light system for for example having in conjunction with Fig. 2 A and the disclosed size of 2B provides enough luminosity, need the light source 91 of this change of considerable quantity.The in the situation that of Fig. 9 B, be 12 light sources.Therefore, by means of for example having simplified and installed and aim at according to the light source 1 of Fig. 1.
In conjunction with Figure 10 A and 10B, with stereo representation, show another example embodiment of light source 1.In Figure 10 A, only partly show reflection type optical element 4 for better understanding, in Figure 10 B, fully show optical element 4.
Four semiconductor devices 3 are arranged in four otch of optical element 4, and notch shape becomes reflector and has parabola or hyperboloid form.For example, optical element 4 has two symmetrical planes just, and wherein, optical axis is positioned at these symmetrical planes and described symmetrical plane is perpendicular to one another.Therefore, principal reflection surface 43 is divided into the face of four parts.
From top view, the middle body of optical element 4 is configured as cross.Due to this, from top view, middle body 41 has the average diameter less than the average diameter that is configured as foursquare top 42.In sectional view, according to the reflection type optical element 4 of Figure 10 A and 10B, have as the form in conjunction with the shown optical element of Figure 1A.
According to the optical element 4 of Figure 10 A and 10B, also can have as disclosed perforation in the context about for example Figure 1A and 1B.In this case, top reflecting surface 44 also can be provided with facet, and principal reflection surface 43 also can be provided with facet.
The present invention is not limited to according to the example embodiment of the description of described example embodiment.But, the present invention includes new arbitrarily feature and any combination of feature, the combination of these features specifically comprises in any combination of the feature in Patent right requirement and any combination of the feature in example embodiment, though this feature maybe this combination itself in Patent right requirement or example embodiment, pointed out clearly.
Claims (14)
1. a semiconductor light sources (1), comprising:
At least one has the bearing (2) of bearing end face (20),
A plurality of luminous semiconductor devices (3), it is upper and have along the main transmit direction (M) with the crossing direction of described bearing end face (20) that described a plurality of luminous semiconductor devices (3) are arranged on described bearing end face (20), and
Reflection type optical element (4), it is upper that described reflection type optical element (4) is positioned at described bearing (2),
Wherein
Described optical element (4) comprises middle body (41),
In the top view towards described bearing end face (20), described semiconductor devices (3) is positioned at described middle body (41) around, and is arranged in the plane being limited by described bearing end face (20),
Described optical element (4) comprises the top (42) of following described middle body (41) along the main transmit direction (M) of described semiconductor devices (3),
Described top (42) have than described middle body (41) larger and than the larger average diameter of ultimate range between described semiconductor devices (3),
Described semiconductor devices (3) is positioned between described bearing (2) and described optical element (4),
Described optical element (41) comprises in the face of described semiconductor devices (3) and in the principal reflection of described middle body (41) and both upper extensions of described top (42) surperficial (43), and
In at least one viewgraph of cross-section perpendicular to described bearing end face (20), (43) concave-concave ground, described principal reflection surface forms.
2. semiconductor light sources according to claim 1 (1), wherein, in the viewgraph of cross-section perpendicular to described bearing end face (20), described principal reflection surface (43) forms with column coordinate according to following formula: h (r)=[q (r-0.5d)]
0.5+ h
o, r>=0.5d, and there is the tolerance of 0.25d at the most, wherein, h is the height on described principal reflection surface (43), r is and the distance of the optical axis (A) of described optical element (4) that q is greater than 0 real number, h
obe offset height, and d is the diameter of locating at described bearing end face (20) at middle body described in described viewgraph of cross-section (41).
3. semiconductor light sources according to claim 2 (1), wherein, described principal reflection surface (43) symmetrically forms, and described optical axis (A) is rotating shaft.
4. according to the semiconductor light sources (1) described in claim 1,2 or 3,
Wherein, described principal reflection surface (43) is the face that level and smooth at least twice continuously differentiable divides, or can be similar to by this, and wherein tolerance is at most 0.5mm,
Wherein, the symbol of the second dervative of described is constant.
5. according to the semiconductor light sources (1) described in claim 1,2 or 3,
Be included in a plurality of perforation (45) that form in described optical element (4), described perforation (45) is designed to be passed through by the partial radiation (R) of described semiconductor devices (3) transmitting,
In the top view towards described bearing end face (20), described perforation (45) be not positioned at described semiconductor devices (3) directly over.
6. semiconductor light sources according to claim 5 (1), comprises the first perforation (45a) and the second perforation (45b),
Wherein, described the second perforation (45b) has than described first perforation (45a) large average diameter,
Wherein, described the first perforation (45a) is nearer than described the second perforation (45b) described bearing end face of distance (20), and
Wherein, described the first perforation (45a) is shifted with respect to described the second perforation (45b) along peripheral direction.
7. semiconductor light sources according to claim 6 (1),
Wherein, the average diameter of described the second perforation (45b) the maximum gauge of described top (42) 5% and 15% between, comprise 5% and 15%, and
Wherein, in the top view towards described bearing end face (20), the average diameter of described the first perforation (45a) the maximum gauge of described top (42) 0.75% and 4% between, comprise 0.75% and 4%.
8. semiconductor light sources according to claim 6 (1),
Wherein, in the top view towards described bearing end face (20), described semiconductor devices (3) is followed described the first perforation (45a) along radial direction, and
Wherein, the quantity of described the first perforation (45a), described the second perforation (45b) and described semiconductor devices (3), between 3 and 8, comprises 3 and 8.
9. according to the semiconductor light sources (1) described in claim 1,2 or 3,
Wherein, described optical element (4) comprises towards the top reflecting surface (44) that leaves described semiconductor devices (3) direction and be similar to the form on described principal reflection surface (43),
Wherein, the average diameter that described top reflecting surface (44) is provided with a plurality of facets (46) and described facet (46) the maximum gauge of described top (42) 0.5% and 3.5% between, comprise 0.5% and 3.5%.
10. according to the semiconductor light sources (1) described in claim 1,2 or 3,
Wherein, module (10) is formed by a bearing (2), the described optical element (4) that is arranged on the described semiconductor devices (3) on described bearing (2) and follows described semiconductor devices (3),
Wherein, described module can be used as disposed of in its entirety.
11. semiconductor light sources according to claim 10 (1), comprise quantity between 2 and 12, comprise 2 and 12 s' described module (10), and
Also comprise reflective backboard (5),
Wherein, it is upper that described module (10) is arranged on described backboard (5), and
Wherein, described light source (1) is designed to the back light system of display.
12. semiconductor light sources according to claim 10 (1),
Wherein, described semiconductor devices (3) be arranged to described optical element (4) in a distance,
Wherein, a part for the radiation of being launched by described semiconductor devices (3) is not hit described optical element (4), and
Wherein, in plan view, the emission characteristics of described module (10) is star or criss-cross.
13. according to the semiconductor light sources (1) described in claim 1,2 or 3,
Wherein, the maximum gauge of described optical element (4) between 40mm and 120mm, comprise 40mm and 120mm,
Wherein, the minimum diameter of described middle body (41) between 10mm and 30mm, comprise 10mm and 30mm,
Wherein, the height of described optical element (4) between 18mm and 38mm, comprise 18mm and 38mm,
Wherein, the average distance between adjacent semiconductor devices (3) between 15mm and 40mm, comprise 15mm and 40mm, and
Wherein, described semiconductor devices (3) is positioned near the focal line (f) on described principal reflection surface (43), has the tolerance of 7mm at the most.
14. 1 kinds of reflection type optical elements for semiconductor light sources (3), comprising:
Middle body (41),
Top (42), described top (42) follow described middle body (41) along the optical axis (A) of described optical element (4), and
Principal reflection surface (43), described principal reflection surface (43) is in described middle body (41) and described top (42) both upper extensions,
Wherein
Described top (41) has than the large average diameter of described middle body (41), and
In half space above installation level and be parallel at least one viewgraph of cross-section of described optical axis (A), (43) concave-concave ground, described principal reflection surface forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210227149.4A CN103511874A (en) | 2012-06-29 | 2012-06-29 | Light source and reflection-type optical element |
Applications Claiming Priority (1)
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| CN201210227149.4A CN103511874A (en) | 2012-06-29 | 2012-06-29 | Light source and reflection-type optical element |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6183100B1 (en) * | 1997-10-17 | 2001-02-06 | Truck-Lite Co., Inc. | Light emitting diode 360° warning lamp |
| CN1534339A (en) * | 2003-03-31 | 2004-10-06 | 富士通显示技术株式会社 | Surface lighting device and liquid crystal display with the same |
| KR20100069095A (en) * | 2008-12-16 | 2010-06-24 | 한국광기술원 | Luminescent diode lighting apparatus |
| CN201636748U (en) * | 2010-04-12 | 2010-11-17 | 杜进盛 | Warning strobe lamp |
| CN102282412A (en) * | 2009-01-20 | 2011-12-14 | 松下电器产业株式会社 | Illuminating apparatus |
| CN102278652A (en) * | 2011-09-15 | 2011-12-14 | 浙江世明光学科技有限公司 | Light emitting diode (LED) ball-bulb lamp |
-
2012
- 2012-06-29 CN CN201210227149.4A patent/CN103511874A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6183100B1 (en) * | 1997-10-17 | 2001-02-06 | Truck-Lite Co., Inc. | Light emitting diode 360° warning lamp |
| CN1534339A (en) * | 2003-03-31 | 2004-10-06 | 富士通显示技术株式会社 | Surface lighting device and liquid crystal display with the same |
| KR20100069095A (en) * | 2008-12-16 | 2010-06-24 | 한국광기술원 | Luminescent diode lighting apparatus |
| CN102282412A (en) * | 2009-01-20 | 2011-12-14 | 松下电器产业株式会社 | Illuminating apparatus |
| CN201636748U (en) * | 2010-04-12 | 2010-11-17 | 杜进盛 | Warning strobe lamp |
| CN102278652A (en) * | 2011-09-15 | 2011-12-14 | 浙江世明光学科技有限公司 | Light emitting diode (LED) ball-bulb lamp |
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Application publication date: 20140115 |