CN103515506A - Light emitting diode packaging structure and its manufacturing method - Google Patents
Light emitting diode packaging structure and its manufacturing method Download PDFInfo
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- CN103515506A CN103515506A CN201210198065.2A CN201210198065A CN103515506A CN 103515506 A CN103515506 A CN 103515506A CN 201210198065 A CN201210198065 A CN 201210198065A CN 103515506 A CN103515506 A CN 103515506A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The invention discloses a light emitting diode packaging structure which comprises a substrate, an electrode formed on the substrate, a light emitting diode chip which is fixed on the substrate and is electrically connected with the electrode, a first reflector cup formed on the substrate and a packaging body which covers the light emitting diode chip on the substrate. The packaging structure provided by the invention also comprises a second reflector cup which encircles and covers the first reflector cup and the substrate. A reflective surface of the second reflector cup and the upper surface of a packaging layer together form a recessed surface. The invention also relates to a manufacturing method of the light emitting diode packaging structure.
Description
Technical field
The present invention relates to a kind of semiconductor package and manufacture method thereof, relate in particular to a kind of package structure for LED and manufacture method thereof.
Background technology
Than traditional light emitting source, the advantage such as that light-emitting diode (Light Emitting Diode, LED) has is lightweight, volume is little, it is low to pollute, the life-span is long, it is applied more and more widely as a kind of novel light emitting source.
Existing package structure for LED generally includes substrate, the electrode forming on substrate, be fixed on substrate and the light-emitting diode chip for backlight unit that is electrically connected with electrode and the encapsulated layer of covering luminousing diode chip.In prior art, in order to improve the light effect that of package structure for LED, conventionally understand at light-emitting diode chip for backlight unit and a reflector is set around, the light that light-emitting diode chip for backlight unit sends is reflected via reflector, thereby obtain the light of required angle.Yet the inwall of the reflector in the less package structure for LED of physical dimension is inclined-plane or face directly normally, therefore can limit reflection of light angle, thereby cause the whole light effect that goes out to reach not good.
Summary of the invention
In view of this, be necessary to provide a kind of and can improve package structure for LED and the manufacture method thereof that light effect.
A kind of package structure for LED, the light-emitting diode chip for backlight unit that comprises substrate, is formed at electrode on substrate, is fixed on substrate and is electrically connected with electrode, be formed at the first reflector on substrate and be filled in the first reflector and the packaging body of covering luminousing diode chip on substrate, the upper surface that this packaging body deviates from light-emitting diode chip for backlight unit is exiting surface, also comprise the second reflector, described the second reflector around and cover the first reflector and substrate, the common concave surface that forms of the reflecting surface of described the second reflector and the exiting surface of encapsulated layer.
A manufacture method, comprises the following steps:
One substrate is provided, and on substrate, forms electrode;
On substrate, form some the first reflectors;
Light-emitting diode chip for backlight unit is installed in the first reflector and with the electrode on substrate and is electrically connected;
In the first reflector, form packaging body;
In the outside of the first reflector and substrate, cover a cover layer;
From cover layer, to packaging body, form a depression and make the cover layer that is covered in the first reflector top form second reflector with concave surface, this depression extends to packaging body from cover layer; And
Cutting substrate forms several package structure for LED.
The package structure for LED that embodiment of the present invention provides forms second reflector with arc line shaped concave surface on the top of the first reflector, after the light of the second reflective cup reflects is converged again outgoing to strengthen the converging action of whole encapsulating structure, thereby improve the light effect that of package structure for LED, reach the required converging ray of requirement.
With reference to the accompanying drawings, in conjunction with embodiment, the invention will be further described.
Accompanying drawing explanation
Fig. 1 is the generalized section of the package structure for LED of execution mode provided by the invention.
Fig. 2 is the schematic top plan view of the package structure for LED in Fig. 1.
Fig. 3 is the elevational schematic view of the package structure for LED in Fig. 1.
Fig. 4 to Figure 13 is the generalized section of the package structure for LED of each step gained in the manufacture process of package structure for LED of an embodiment of the present invention.
Wherein, the generalized section of monolith substrate in the manufacture process that Fig. 4 is package structure for LED of the present invention.
Fig. 5 is the schematic top plan view of monolith substrate in Fig. 4.
Fig. 6 is the schematic side view of monolith substrate in Fig. 4.
Fig. 7 is the elevational schematic view of monolith substrate in Fig. 4.
Main element symbol description
| Package structure for |
100 |
| |
10、10a |
| The |
11 |
| The |
12 |
| The |
13 |
| The |
14 |
| |
15 |
| |
16 |
| The |
17 |
| The |
18 |
| |
20 |
| The |
21 |
| The |
22 |
| Light-emitting diode chip for |
30 |
| |
31 |
| The |
40、40a |
| |
41、61 |
| |
42、62 |
| |
421 |
| |
43 |
| |
50 |
| Exiting |
51 |
| The |
60、60a |
| Concave surface | 63 |
| |
70 |
| |
80 |
| Convex |
81 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1 to Fig. 3, the package structure for LED 100 that first embodiment of the invention provides, it comprises substrate 10, on substrate 10 spaced two electrodes 20, be fixed on first substrate 10 and the light-emitting diode chip for backlight unit 30 that is electrically connected with electrode 20, be positioned on substrate 10 and around the first reflector 40 of light-emitting diode chip for backlight unit 30, the packaging body 50 of covering luminousing diode chip 30 and one second reflector 60.
Described substrate 10 is rectangular tabular roughly, it comprises four sidewalls, the first side wall 11, the second sidewall 12, the 3rd sidewall 13 and the 4th sidewall 14, and these four sidewalls join end to end successively, wherein the first side wall 11 is relative with the 3rd sidewall 13, and the second sidewall 12 is relative with the 4th sidewall 14.The two ends that these four sidewalls are relative form respectively two surfaces of substrate 10, i.e. upper surface 15 and lower surface 16.This upper surface 15 is for carrying light-emitting diode chip for backlight unit 30.On this substrate 10, form some grooves, the quantity of this groove is two in the present embodiment, is respectively the first groove 17 and the second groove 18.This first groove 17 and the second groove 18 be the direction depression towards the 4th sidewall 14 from the second sidewall 12 respectively, and run through upper surface 15 and the lower surface 16 of substrate 10, that is this first groove 17 and the second groove 18 are forming openings with upper surface 15 and lower surface 16 intersections respectively.
Described electrode 20 comprises that the first electrode 21 of space and the second electrode 22, the first electrodes 21 and the second electrode 22 extend to respectively the lower surface 16 of substrate 10 from the upper surface 15 of substrate 10 via the inwall of the first groove 17 and the second groove 18.Thereby this first electrode 21 and the second electrode 22 cover routing that opening that the first grooves 17 form at upper surface 15 places with the second groove 18 is light-emitting diode chip for backlight unit 30 and be connected more space is provided, the first electrode 21 and the second electrode 22 expose the first groove 17 and the second groove 18 at the opening of lower surface 16 places formation.In other words, this first groove 17 and the second groove 18 only expose opening at lower surface 16 places of substrate 10.When this package structure for LED 100 is used as lateral direction light emission light source, the second sidewall 12 and the circuit board (not shown) of substrate 10 are electrically connected, this first groove 17 and the second groove 18 are towards circuit board setting, the scolders such as tin cream can be welded and fixed in the first groove 17 and the second groove 18, thereby can make circuit board be formed and be electrically connected with the electrode 20 being connected with the first groove 17, the second groove 18 by scolding tin.This first groove 17, the second groove 18, for scolder provides accommodation space, prevent that scolder from melting and contacting with the All other routes structure of circuit board, and then form short circuit.Certainly, if this package structure for LED 100 is not that while being used as lateral direction light emission light source, this first groove 17 and the second groove 18 can save, thereby the lower surface of substrate 10 16 and circuit board are electrically connected in package structure for LED 100 places in circuit.
Described light-emitting diode chip for backlight unit 30 is arranged at the upper surface 15 of substrate 10, and is positioned at respectively the part electric connection of the upper surface 15 of substrate 10 with the first electrode 21 and the second electrode 22.This light-emitting diode chip for backlight unit 30 can adopt die bond routing, cover the mode such as brilliant connects.In the present embodiment, this light-emitting diode chip for backlight unit 30 is fixed on one of them electrode 20, and adopts wire 31 to be connected with the second electrode 22 with the first electrode 21 respectively.
Described the first reflector 40 is positioned at the upper surface 15 of substrate 10, and around light-emitting diode chip for backlight unit 30.This first reflector 40 comprises outer wall 41, inwall 42 and roof 43.This outer wall 41 aligns with four sidewalls of substrate 10, these inwall 42 cross sections are substantially oblong-shaped, it surrounds an accommodation space 421, the bore of this accommodation space 421 increases to the direction away from substrate 10 gradually from the upper surface 15 of substrate 10, that is to say inwall 42 from the upper surface 15 of substrate 10 to the outward-dipping extension of the direction away from substrate 10.This roof 43 connects outer wall 41 and inwall 42 along the direction that is parallel to substrate 10.The height of this first reflector 40 is greater than the thickness of light-emitting diode chip for backlight unit 30.
This first reflector 40 also can be made for not having a material of reflecting properties.This first reflector 40 be formed on substrate 10 and by light-emitting diode chip for backlight unit 30 around wherein, thereby above light-emitting diode chip for backlight unit 30, form accommodation space 421, for the formation of follow-up packaging body 50 provides space.This first reflector 40 is located in the periphery of light-emitting diode chip for backlight unit 30, also can be used for each light-emitting diode chip for backlight unit 30 and other elements to separate, play the effect of insulating barrier, make each light-emitting diode chip for backlight unit 30 in manufacturing process, avoid being subject to the interference of other elements.
Described packaging body 50 is filled in the accommodation space 421 that the first reflector 40 surrounds.This packaging body 50 is a concave surface away from the exiting surface 51 of light-emitting diode chip for backlight unit 30, and the thickness mind-set surrounding from packaging body 50 of packaging body 50 that is covered in the upper surface of substrate 10 increases gradually.In this packaging body 50, be evenly distributed with fluorescent material.
Described the second reflector 60 is around substrate 10 and the first reflector 40 and cover the roof 43 of the first reflector 40.This second reflector 60 comprises outer wall 61 and inwall 62, this outer wall 61 is located on outside four sidewalls of substrate 10, in the present embodiment, the outer wall 61 of the second reflector 60 is parallel with the outer wall of the sidewall of substrate 10 and the first reflector 40, and the height of the outer wall 61 of the second reflector 60 is greater than the height sum of substrate 10 and the first reflector 40.Because outer wall 61 is completely coated by the outer wall of substrate 10 and the first reflector 40, therefore also by both joint sealings, can prevent that aqueous vapor or impurity from entering packaging body 50 and light-emitting diode chip for backlight unit 30 is polluted from the joint of substrate 10 and the first reflector 40.This inwall 62 docks at roof 43 places of the first reflector 40 with the exiting surface 51 of packaging body 50.In the present embodiment, the inwall 62 of the second reflector 60 is concave curved surface, and it engages with the exiting surface 51 of packaging body 50 and common forms one towards substrate 10 direction indents, level and smooth concave surface 63 that area is larger.That is to say, concave surface 63 is at roof 43 place's smooth excessivenesses of the first reflector 40.In other embodiments, this concave surface 63 also can be at the roof 43 non-smooth excessivenesses in place of the first reflector 40, and for example concave surface 63 has an obvious turning at roof 43 places, and the spill of concave surface 63 can be adjusted setting according to actual needs.The light that light-emitting diode chip for backlight unit 30 sends can be via shining the outside of package structure for LED 100 after the first reflector 40 and/or the second reflector 60 reflections.Because the inwall 62 of the second reflector 60 is arc line shaped, than the structure of straight line or oblique line, be easier to form the light of assembling, be beneficial to the luminous intensity that goes out that improves package structure for LED 100.
The package structure for LED 100 that embodiment of the present invention provides forms second reflector 60 with concave curved surface on the first reflector 40 top, make the convergence of rays effect reinforcement through the second reflector 60 reflections, thereby improve the luminous intensity that of package structure for LED 100.In addition, on the second sidewall 12 of the substrate 10 of the package structure for LED 100 in present embodiment, form the first groove 17 and the second groove 18, for the scolders such as tin cream provide accommodation space, thereby be beneficial to the electric connection of light source and circuit board.
The present invention also provides the manufacture method of above-mentioned package structure for LED 100, below, in connection with accompanying drawing, this manufacture method is elaborated.
Refer to Fig. 4 to Fig. 7, one monolith substrate 10a is provided, at the sidepiece of this monolith substrate 10a, offer the first groove 17 and second groove 18 of some spaces, and the electrode 20 of some spaces is set in the upper and lower surface of monolith substrate 10a and the first groove 17 and the second groove 18.This monolith substrate 10a is tabular.This monolith substrate 10a can adopt the materials such as macromolecular material or composite board to make.The internal face that electrode 20 adopts metal materials to be layed in the upper and lower surface of substrate 10a and the first groove 17, the second groove 18 forms, this metal material is only laid and is not filled up whole the first groove 17, the second groove 18 at the internal face of the first groove 17 and the second groove 18, and therefore the first groove 17 and the second groove 18 still keep the shape of its depression.Electrode 20 covers in upper surface one side of monolith substrate 10a the opening that the first groove 17 and the second groove 18 are positioned at this monolith substrate upper surface, and the opening that this first groove 17 and the second groove 18 are positioned at this monolith substrate lower surface is not covered by electrode 20 and in the lower surface one side penetrating electrode 20 of monolith substrate 10a.
Refer to Fig. 8, on monolith substrate 10a, form some the first reflector 40a.Corresponding two the adjacent electrodes 20 of each first reflector 40a.The reflecting surface of this first reflector 40a is that self-reflection cup end face is to truncated cone-shaped of substrate 10a convergent.This first reflector 40a can adopt resin or plastic or other material to be combined with monolith substrate 10a by the mode of stickup or pressing mold.The height of this first reflector 40a is between 150 microns to 500 microns (μ m).
Refer to Fig. 9, some light-emitting diode chip for backlight unit 30 are installed in the first reflector 40a and with the electrode 20 of substrate 10a and are electrically connected.In the present embodiment, a light-emitting diode chip for backlight unit 30 of installing in each first reflector 40a.Each light-emitting diode chip for backlight unit 30 is electrically connected to respectively with two adjacent electrodes 20 by the mode of die bond routing.In other embodiments, this light-emitting diode chip for backlight unit 30 also can utilize mode and electrode 20 combinations of covering crystalline substance or eutectic.
Refer to Figure 10, in the first reflector 40a, form packaging body 50 with covering luminousing diode chip 30 on monolith substrate 10a.This packaging body 50 can adopt the mode of injection moulding or moulded section to form.The end face of this packaging body 50 is concordant with the end face of the first reflector 40a, to form a common horizontal plane.
Refer to Figure 11, cover a cover layer 70 in the outside of package structure for LED, this cover layer 70 has certain thickness, is covered in the first reflector 40a and packaging body 50 top, and around the sidepiece of the first reflector 40a and monolith substrate 10a.This cover layer 70 can adopt the material identical with the first reflector 40a the mode by pressing mold to form.
Refer to Figure 12 and 13, from cover layer 70, to packaging body 50, form a depression 71.This step provides a mould 80, and this mould 80 has a downward outstanding convex surface 81.This depression 71 be by by convex surface 81 over against cover layer 70 by drill bit or hobboing cutter cuts on cover layer 70 or roll extrusion forms.This depression 71 extends to packaging body 50 from cover layer 70 end faces.In the present embodiment, the hobboing cutter that this mould 80 is cylindrical structure, depression 71 is by rotating vertically this mould 80, cylinder mold 80 side in rotation is moved to packaging body 50 from cover layer 70, until mould 80 sides contact with the first reflector 40a, thereby in cover layer 70 and packaging body 50, form depression 71.Certainly, in other embodiments, if desired difform depression 71, can also continue mould 80 in rotary moving, makes to cave in 71 to horizontal direction increase, thereby meets different requirements.The cover layers 70 of adjacent two depressions between 71 retain original thickness, thus on the first reflector 40a, form have concave surface 63 the second reflector 60a and with the exiting surface 51 of the packaging body 50 of concave surface 63 integrated indents.Owing to adopting mould 80 to form depression 71, thereby 71 the precision of making to cave in is easily controlled, be conducive to make the depression 71 that precision is higher, thereby assurance has higher precision for the concave surface of the second reflector 60a of reflection ray, guarantees convergence of rays performance and the efficiency of package structure for LED 100.
Refer to Figure 13, cut this substrate 10a with the second reflector 60a to form several separated package structure for LED 100.
Package structure for LED 100 employings one of the present invention have mould 80 one-body molded depression 71 on cover layer 70 and packaging body 50 of convex surface 81, thereby form the reflector with concave surface, compare with modes such as ejection formations, to forming the precision of concave surface, easily control, thereby make the precision of concave surface of this reflector higher, being beneficial to the light that light-emitting diode chip for backlight unit 30 sends can assemble accurately, improves the luminous efficiency of package structure for LED 100.
Be understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change and distortion all should belong to the protection range of the claims in the present invention.
Claims (10)
1. a package structure for LED, comprise substrate, be formed at the electrode on substrate, the light-emitting diode chip for backlight unit that is fixed on substrate and is electrically connected with electrode, be formed at the first reflector on substrate and be filled in the first reflector and the packaging body of covering luminousing diode chip on substrate, the upper surface that this packaging body deviates from light-emitting diode chip for backlight unit is exiting surface, it is characterized in that: also comprise the second reflector, described the second reflector around and cover the first reflector and substrate, the common concave surface that forms of the reflecting surface of described the second reflector and the exiting surface of encapsulated layer.
2. package structure for LED as claimed in claim 1, it is characterized in that: described the first reflector comprises a roof parallel with substrate, the reflecting surface of described the second reflector docks at the roof place of the first reflector with the exiting surface of packaging body, and described concave surface is at described roof place smooth excessiveness.
3. package structure for LED as claimed in claim 1, it is characterized in that: described substrate comprises the some sidewalls between upper surface and lower surface and upper surface and lower surface, one of them sidewall of described substrate caves inward and is formed with the first groove and the second groove that runs through respectively upper surface and lower surface.
4. package structure for LED as claimed in claim 3, it is characterized in that: described electrode comprises the first electrode and second electrode of space, this first electrode extends to the lower surface of substrate from the upper surface of substrate via the first groove, this second electrode extends to the lower surface of substrate from the upper surface of substrate via the second groove.
5. package structure for LED as claimed in claim 4, it is characterized in that: described the first groove and the second groove run through upper surface and the lower surface of substrate and all form opening at upper surface and lower surface, the first groove and the second groove are covered by electrode at the opening of the upper surface formation of substrate.
6. package structure for LED as claimed in claim 3, is characterized in that: the height of described the second reflector is greater than the height sum of substrate and the first reflector, the joint of described the second reflector hermetic sealing substrate and the first reflector.
7. package structure for LED as claimed in claim 1, it is characterized in that: described the first reflector comprises outer wall, the sidewall of this outer wall and substrate is coplanar, described the second reflector comprises outer wall, this second reflector is around the also coated outer wall of the first reflector and the sidewall of substrate, and the outer wall of this second reflector is parallel with the outer wall of the first reflector.
8. a package structure for LED manufacture method, comprises the following steps:
One substrate is provided, and on substrate, forms electrode;
On substrate, form some the first reflectors;
Light-emitting diode chip for backlight unit is installed in the first reflector and with the electrode on substrate and is electrically connected;
In the first reflector, form packaging body;
In the outside of the first reflector and substrate, cover a cover layer;
From cover layer, to packaging body, form a depression and make the cover layer that is covered in the first reflector top form second reflector with concave surface, this depression extends to packaging body from cover layer; And
Cutting substrate forms several package structure for LED.
9. package structure for LED manufacture method as claimed in claim 8, is characterized in that: described is by a mould with outstanding downwards convex surface, cover layer to be cut or grinds and make forming to packaging body the step that cover layer that a depression makes to be covered in the first reflector top forms second reflector with concave surface from cover layer.
10. package structure for LED manufacture method as claimed in claim 8, it is characterized in that: described mould is cylindrical, described depression is by rotational circle cylindricality mould vertically, the cylindrical die side in rotation is moved until mould side contacts and forms with the first reflector to packaging body from cover layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210198065.2A CN103515506B (en) | 2012-06-15 | 2012-06-15 | Light emitting diode packaging structure and its manufacturing method |
| TW101124470A TWI546985B (en) | 2012-06-15 | 2012-07-06 | Led package and method for manufacturing the same |
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| CN201210198065.2A CN103515506B (en) | 2012-06-15 | 2012-06-15 | Light emitting diode packaging structure and its manufacturing method |
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| CN104134743A (en) * | 2014-06-17 | 2014-11-05 | 京东方光科技有限公司 | LED packaging structure and method, display device and illuminating device |
| CN110649009A (en) * | 2019-10-12 | 2020-01-03 | 东莞市欧思科光电科技有限公司 | Double-compression-molded LED product and manufacturing process thereof |
| CN110892318A (en) * | 2017-07-13 | 2020-03-17 | 索尼公司 | Light emitting device, display device, and lighting device |
| CN114335290A (en) * | 2019-08-13 | 2022-04-12 | 光宝光电(常州)有限公司 | Packaging structure |
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| JP7266961B2 (en) * | 2015-12-31 | 2023-05-01 | 晶元光電股▲ふん▼有限公司 | light emitting device |
| US10083920B1 (en) * | 2018-02-01 | 2018-09-25 | Google Llc | Package stiffener for protecting semiconductor die |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201351718A (en) | 2013-12-16 |
| CN103515506B (en) | 2017-04-26 |
| TWI546985B (en) | 2016-08-21 |
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