CN103567642A - Sapphire cutting device - Google Patents

Sapphire cutting device Download PDF

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Publication number
CN103567642A
CN103567642A CN201210280285.XA CN201210280285A CN103567642A CN 103567642 A CN103567642 A CN 103567642A CN 201210280285 A CN201210280285 A CN 201210280285A CN 103567642 A CN103567642 A CN 103567642A
Authority
CN
China
Prior art keywords
sapphire
laser source
ultra
cutter sweep
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201210280285.XA
Other languages
Chinese (zh)
Other versions
CN103567642B (en
Inventor
陈杰良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Scienbizip Consulting Shenzhen Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CN201210280285.XA priority Critical patent/CN103567642B/en
Publication of CN103567642A publication Critical patent/CN103567642A/en
Application granted granted Critical
Publication of CN103567642B publication Critical patent/CN103567642B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved

Abstract

The invention provides a sapphire cutting device. The sapphire cutting device comprises an ultraviolet laser source and a collimating lens, wherein the ultraviolet laser source is used for sending out a laser beam; the collimating lens is used for converging the laser beam into a parallel laser beam; the parallel laser beam is used for cutting sapphire; the working wavelength range of the ultraviolet laser source is 200-400 nm. Thus, the cost can be reduced since the ultraviolet laser source and the collimating lens with lower cost are adopted for replacing diamond with higher cost. In addition, laser cutting can realize high-speed cutting, and the efficiency is improved.

Description

Sapphire cutter sweep
Technical field
The present invention relates to sapphire cutting technique, particularly a kind of sapphire cutter sweep.
Background technology
At present, mainly by diamond coatings line (diamond coated wire) cutting sapphire, yet, on the one hand because diamond itself is comparatively expensive, owing to being contact cutting, diamond coatings line loss consumption needs to change to a certain extent afterwards, causes cutting cost high on the other hand.In addition, lower by the diamond coatings line cutting sapphire efficiency of wearing and tearing back and forth.
Summary of the invention
In view of this, be necessary to provide a kind of sapphire cutter sweep that reduces costs and raise the efficiency.
A cutter sweep, it comprises a ultra-violet laser source and a collimation lens.This ultra-violet laser source is used for sending a laser beam.This collimation lens is for pooling a collimated laser beam by this laser beam.This collimated laser beam is for cutting sapphire.The service band of this ultra-violet laser source is 200-400 nanometer.
So, owing to adopting lower-cost this ultra-violet laser source and this collimation lens to replace the higher diamond of cost, can reduce costs.In addition, laser cutting can realize high-speed cutting, raises the efficiency.
Accompanying drawing explanation
Fig. 1 is the schematic perspective view of the sapphire cutter sweep of better embodiment of the present invention.
Fig. 2 is the part floor map of the sapphire cutter sweep of Fig. 1.
Main element symbol description
Sapphire cutter sweep 10
Ultra-violet laser source 100
Laser beam 110
Collimated laser beam 120
Collimation lens 200
Shell 300
Receiving space 310
Opening 312
Workbench 400
Plummer 410
Gap 412
Three-dimensional transfer arm 420
Control system 430
The following specific embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
The specific embodiment
Refer to Fig. 1-2, the sapphire cutter sweep 10 of better embodiment of the present invention comprises a ultra-violet laser source 100 and a collimation lens 200.This ultra-violet laser source 100 is for sending a laser beam 110.This collimation lens 200 is for pooling a collimated laser beam 120 by this laser beam 110.This collimated laser beam 120 is for cutting sapphire 20.The service band of this ultra-violet laser source 100 is 200-400 nanometer.
So, owing to adopting lower-cost this ultra-violet laser source 100 and this collimation lens 200 to replace the higher diamond of cost, can reduce costs.In addition, laser cutting can realize high-speed cutting, raises the efficiency.
This ultra-violet laser source 100 is excimer laser source, or adopts laser diode or High Power LED.
The preferred operation wavelength of this ultra-violet laser source 100 is 350-390 nanometer.
Concrete, this sapphire cutter sweep also comprises a shell 300.This shell 300 is formed with a receiving space 310.This receiving space 310 has an opening 312.This ultra-violet laser source 100 is contained in this receiving space 310, and towards these opening 312 these laser beams 110 of transmitting.These collimation lens 200 these openings 312 of sealing, and converge this laser beam 110.
Concrete, this sapphire cutter sweep 10 also comprises a workbench 400.This workbench 400 comprises a plummer 410, three-dimensional transfer arm 420 and a control system 430.This plummer 410 is for carrying this sapphire 20 of location.This plummer 410 is formed with a gap 412.This sapphire 20 arranges across this gap 412.This three-dimensional transfer arm 420 is for this shell 300 of fixing.Thereby this control system 430 is positioned this sapphire 20 on this plummer 410 for the open and close cutting that drives this three-dimensional transfer arm 420 to move and control this ultra-violet laser source 100 by projected path.This projected path falls in this gap 412, and so, this sapphire cutter sweep 10 can not cut to this plummer 410.
In a word; those skilled in the art will be appreciated that; above embodiment is only for the present invention is described; and be not used as limitation of the invention; as long as within connotation scope of the present invention, within the appropriate change that above embodiment is done and variation all drop on the scope of protection of present invention.

Claims (6)

1. a sapphire cutter sweep, is characterized in that comprising a ultra-violet laser source and a collimation lens; This ultra-violet laser source is used for sending a laser beam; This collimation lens is for pooling a collimated laser beam by this laser beam; This collimated laser beam is for cutting sapphire; The service band of this ultra-violet laser source is 200-400 nanometer.
2. sapphire cutter sweep as claimed in claim 1, is characterized in that, this ultra-violet laser source is excimer laser source.
3. sapphire cutter sweep as claimed in claim 1, is characterized in that, this ultra-violet laser source adopts laser diode or High Power LED.
4. sapphire cutter sweep as claimed in claim 1, is characterized in that, the operation wavelength of this ultra-violet laser source is 350-390 nanometer.
5. sapphire cutter sweep as claimed in claim 1, is characterized in that, this sapphire cutter sweep also comprises a shell; This shell is formed with a receiving space; This receiving space has an opening; This ultra-violet laser source is contained in this receiving space, and for launching this laser beam towards this opening; This collimation lens seals this opening.
6. sapphire cutter sweep as claimed in claim 5, is characterized in that, this sapphire cutter sweep also comprises a workbench; This workbench comprises a plummer, three-dimensional transfer arm and a control system; This plummer is used for carrying this sapphire of location; This plummer is formed with a gap; This sapphire arranges across this gap; This three-dimensional transfer arm is for this shell of fixing; Thereby this control system is positioned this sapphire on this plummer for the open and close cutting that drives this three-dimensional transfer arm to move and control this ultra-violet laser source by projected path; This projected path falls in this gap.
CN201210280285.XA 2012-08-08 2012-08-08 Sapphire cutter sweep Expired - Fee Related CN103567642B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210280285.XA CN103567642B (en) 2012-08-08 2012-08-08 Sapphire cutter sweep

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210280285.XA CN103567642B (en) 2012-08-08 2012-08-08 Sapphire cutter sweep

Publications (2)

Publication Number Publication Date
CN103567642A true CN103567642A (en) 2014-02-12
CN103567642B CN103567642B (en) 2017-07-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210280285.XA Expired - Fee Related CN103567642B (en) 2012-08-08 2012-08-08 Sapphire cutter sweep

Country Status (1)

Country Link
CN (1) CN103567642B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI794192B (en) * 2016-11-15 2023-03-01 日商維亞機械股份有限公司 Substrate processing method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09270565A (en) * 1996-04-01 1997-10-14 Kyocera Corp Semiconductor laser diode
US6437363B1 (en) * 1998-09-25 2002-08-20 Murata Manufacturing Co. Ltd. Semiconductor photonic device
CN1527754A (en) * 2001-01-31 2004-09-08 电子科学工业公司 Ultraviolet laser ablative patterning of microstructures in semiconductors
CN1607998A (en) * 2001-12-28 2005-04-20 杰特西斯国际有限公司 A method and related apparatus for cutting a product from a sheet material
CN1761549A (en) * 2003-02-19 2006-04-19 J.P.瑟塞尔联合公司 System and method for cutting using a variable astigmatic focal beam spot
JP2007320124A (en) * 2006-05-31 2007-12-13 Sharp Corp Device and method for cutting brittle plate to be machined
CN101983825A (en) * 2010-10-09 2011-03-09 苏州德龙激光有限公司 Picosecond laser scribing device for light emitting diode (LED) wafer
CN201913386U (en) * 2010-12-30 2011-08-03 沈阳新松机器人自动化股份有限公司 Optical fiber transmission laser welding head
CN102306624A (en) * 2011-06-15 2012-01-04 江苏晶瑞半导体有限公司 Manufacturing methods for photonic crystal and semiconductor and device comprising semiconductor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09270565A (en) * 1996-04-01 1997-10-14 Kyocera Corp Semiconductor laser diode
US6437363B1 (en) * 1998-09-25 2002-08-20 Murata Manufacturing Co. Ltd. Semiconductor photonic device
CN1527754A (en) * 2001-01-31 2004-09-08 电子科学工业公司 Ultraviolet laser ablative patterning of microstructures in semiconductors
CN1607998A (en) * 2001-12-28 2005-04-20 杰特西斯国际有限公司 A method and related apparatus for cutting a product from a sheet material
CN1761549A (en) * 2003-02-19 2006-04-19 J.P.瑟塞尔联合公司 System and method for cutting using a variable astigmatic focal beam spot
JP2007320124A (en) * 2006-05-31 2007-12-13 Sharp Corp Device and method for cutting brittle plate to be machined
CN101983825A (en) * 2010-10-09 2011-03-09 苏州德龙激光有限公司 Picosecond laser scribing device for light emitting diode (LED) wafer
CN201913386U (en) * 2010-12-30 2011-08-03 沈阳新松机器人自动化股份有限公司 Optical fiber transmission laser welding head
CN102306624A (en) * 2011-06-15 2012-01-04 江苏晶瑞半导体有限公司 Manufacturing methods for photonic crystal and semiconductor and device comprising semiconductor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
杨伟: "高精密激光切割的理论及应用技术研究", 《中国优秀硕士学位论文全文数据库 信息科技》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI794192B (en) * 2016-11-15 2023-03-01 日商維亞機械股份有限公司 Substrate processing method

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C06 Publication
PB01 Publication
EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20170608

Address after: Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor

Applicant after: SCIENBIZIP CONSULTING (SHEN ZHEN) CO., LTD.

Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two

Applicant before: Hongfujin Precise Industry (Shenzhen) Co., Ltd.

Applicant before: Hon Hai Precision Industry Co., Ltd.

TA01 Transfer of patent application right
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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170711

Termination date: 20180808

CF01 Termination of patent right due to non-payment of annual fee