CN103567642B - Sapphire cutter sweep - Google Patents

Sapphire cutter sweep Download PDF

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Publication number
CN103567642B
CN103567642B CN201210280285.XA CN201210280285A CN103567642B CN 103567642 B CN103567642 B CN 103567642B CN 201210280285 A CN201210280285 A CN 201210280285A CN 103567642 B CN103567642 B CN 103567642B
Authority
CN
China
Prior art keywords
ultra
laser source
sapphire
cutter sweep
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210280285.XA
Other languages
Chinese (zh)
Other versions
CN103567642A (en
Inventor
陈杰良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Scienbizip Consulting Shenzhen Co Ltd
Original Assignee
Scienbizip Consulting Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Scienbizip Consulting Shenzhen Co Ltd filed Critical Scienbizip Consulting Shenzhen Co Ltd
Priority to CN201210280285.XA priority Critical patent/CN103567642B/en
Publication of CN103567642A publication Critical patent/CN103567642A/en
Application granted granted Critical
Publication of CN103567642B publication Critical patent/CN103567642B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved

Abstract

The present invention provides a kind of sapphire cutter sweep, and it includes a ultra-violet laser source and collimating lens.The ultra-violet laser source is used to send a laser beam.The collimation lens is used to for the laser beam to pool a collimated laser beam.The collimated laser beam is used for cutting sapphire.The service band of the ultra-violet laser source is 200 400 nanometers.In this way, due to replacing relatively costly diamond using the lower-cost ultra-violet laser source and the collimation lens, it is possible to decrease cost.In addition, laser cutting is capable of achieving high-speed cutting, efficiency is improved.

Description

Sapphire cutter sweep
Technical field
The present invention relates to sapphire cutting technique, more particularly to a kind of sapphire cutter sweep.
Background technology
At present, mainly by diamond coatings line (diamond coated wire) cutting sapphire, however, on the one hand Due to diamond in itself costly, on the other hand due to being contact cutting, diamond coatings line loss consumption to a certain extent after Need to change, cause cutting cost high.In addition, less efficient by the diamond coatings line cutting sapphire that weares and teares back and forth.
The content of the invention
In view of this, it is necessary to which providing one kind reduces cost and can carry efficient sapphire cutter sweep.
A kind of sapphire cutter sweep, it includes a ultra-violet laser source and collimating lens.The ultra-violet laser source is used to send out Go out a laser beam.The collimation lens is used to for the laser beam to pool a collimated laser beam.The collimated laser beam is used to cut indigo plant Jewel.The service band of the ultra-violet laser source is 200-400 nanometers.
In this way, due to replacing relatively costly diamond using the lower-cost ultra-violet laser source and the collimation lens, Can reduces cost.In addition, laser cutting is capable of achieving high-speed cutting, efficiency is improved.
Brief description of the drawings
Fig. 1 is the schematic perspective view of the sapphire cutter sweep of better embodiment of the present invention.
Fig. 2 is the partial plan view of the sapphire cutter sweep of Fig. 1.
Main element symbol description
Sapphire cutter sweep 10
Ultra-violet laser source 100
Laser beam 110
Collimated laser beam 120
Collimation lens 200
Shell 300
Receiving space 310
Opening 312
Workbench 400
Plummer 410
Gap 412
Three-dimensional transfer arm 420
Control system 430
Following specific embodiment will further illustrate the present invention with reference to above-mentioned accompanying drawing.
Specific embodiment
Refer to Fig. 1-2, the sapphire cutter sweep 10 of better embodiment of the present invention include a ultra-violet laser source 100 and Collimating lens 200.The ultra-violet laser source 100 is used to send a laser beam 110.The collimation lens 200 is used for the laser beam 110 pool a collimated laser beam 120.The collimated laser beam 120 is used for cutting sapphire 20.The work of the ultra-violet laser source 100 Make wave band for 200-400 nanometers.
In this way, due to replacing relatively costly gold using the lower-cost ultra-violet laser source 100 and the collimation lens 200 Hard rock, it is possible to decrease cost.In addition, laser cutting is capable of achieving high-speed cutting, efficiency is improved.
The ultra-violet laser source 100 is excimer laser source, or uses laser diode or High Power LED.
The preferred operation wavelength of ultra-violet laser source 100 is 350-390 nanometers.
Specifically, the sapphire cutter sweep also includes a shell 300.The shell 300 is formed with a receiving space 310. The receiving space 310 has an opening 312.The ultra-violet laser source 100 is contained in the receiving space 310, and towards the opening 312 Launch the laser beam 110.The collimation lens 200 closes the opening 312, and converges the laser beam 110.
Specifically, the sapphire cutter sweep 10 also includes a workbench 400.The workbench 400 includes a plummer 410th, a three-dimensional control system 430 of transfer arm 420 and.The plummer 410 is used for carrying and positions the sapphire 20.The carrying Platform 410 is formed with a gap 412.The sapphire 20 is set across the gap 412.The three-dimensional transfer arm 420 is outer for holding this Shell 300.The control system 430 is used to drive the three-dimensional transfer arm 420 to be moved by predetermined track and control the ultra-violet laser source 100 open and close are so as to cut the sapphire 20 being positioned on the plummer 410.The predetermined track falls into the gap In 412, in this way, the sapphire cutter sweep 10 will not cut to the plummer 410.
In a word, those skilled in the art are it should be appreciated that the implementation method of the above is intended merely to explanation originally Invention, and be not used as being limitation of the invention, as long as within spirit of the invention, to above example institute The appropriate change and change made all fall within the scope of protection of present invention.

Claims (4)

1. a kind of sapphire cutter sweep, it is characterised in that including a ultra-violet laser source and collimating lens；The ultra-violet laser source For sending a laser beam；The collimation lens is used to for the laser beam to pool a collimated laser beam；The collimated laser beam is used for Direct cutting sapphire；The service band of the ultra-violet laser source is 200-400 nanometers；The sapphire cutter sweep also holds including one Microscope carrier, a three-dimensional transfer arm and a control system for fixing the ultra-violet laser source；The plummer is used to carry positioning sapphire； The plummer is formed with a gap, the gap be used to make the sapphire across；The control system is used to drive the three-dimensional transfer arm The open and close of the ultra-violet laser source are moved and controlled by predetermined track, so that the motion track of the collimated laser beam Fall into the gap；The sapphire cutter sweep also includes a shell；The shell is fixed in the three-dimensional transfer arm, and the shell is formed There is a receiving space；The receiving space has an opening；The ultra-violet laser source is contained in the receiving space, and for being opened towards this Mouth launches the laser beam；The collimation lens closes the opening.
2. sapphire cutter sweep as claimed in claim 1, it is characterised in that the ultra-violet laser source is excimer laser source.
3. sapphire cutter sweep as claimed in claim 1, it is characterised in that the ultra-violet laser source using laser diode or Person's High Power LED.
4. sapphire cutter sweep as claimed in claim 1, it is characterised in that the operation wavelength of the ultra-violet laser source is 350- 390 nanometers.
CN201210280285.XA 2012-08-08 2012-08-08 Sapphire cutter sweep Expired - Fee Related CN103567642B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210280285.XA CN103567642B (en) 2012-08-08 2012-08-08 Sapphire cutter sweep

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210280285.XA CN103567642B (en) 2012-08-08 2012-08-08 Sapphire cutter sweep

Publications (2)

Publication Number Publication Date
CN103567642A CN103567642A (en) 2014-02-12
CN103567642B true CN103567642B (en) 2017-07-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210280285.XA Expired - Fee Related CN103567642B (en) 2012-08-08 2012-08-08 Sapphire cutter sweep

Country Status (1)

Country Link
CN (1) CN103567642B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6986393B2 (en) * 2016-11-15 2021-12-22 ビアメカニクス株式会社 Substrate processing method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09270565A (en) * 1996-04-01 1997-10-14 Kyocera Corp Semiconductor laser diode
JP3262080B2 (en) * 1998-09-25 2002-03-04 株式会社村田製作所 Semiconductor light emitting device
GB2389811B (en) * 2001-01-31 2004-10-27 Electro Scient Ind Inc Ultraviolet laser ablative patterning of microstructures in semiconductors
SG121700A1 (en) * 2001-12-28 2006-05-26 Jetsis Int Pte Ltd A method and related apparatus for cutting a product from a sheet material
TWI248244B (en) * 2003-02-19 2006-01-21 J P Sercel Associates Inc System and method for cutting using a variable astigmatic focal beam spot
JP4486943B2 (en) * 2006-05-31 2010-06-23 シャープ株式会社 Cutting apparatus and cutting method of work brittle plate
CN101983825A (en) * 2010-10-09 2011-03-09 苏州德龙激光有限公司 Picosecond laser scribing device for light emitting diode (LED) wafer
CN201913386U (en) * 2010-12-30 2011-08-03 沈阳新松机器人自动化股份有限公司 Optical fiber transmission laser welding head
CN102306624A (en) * 2011-06-15 2012-01-04 江苏晶瑞半导体有限公司 Manufacturing methods for photonic crystal and semiconductor and device comprising semiconductor

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Publication number Publication date
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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20170608

Address after: Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor

Applicant after: SCIENBIZIP CONSULTING (SHEN ZHEN) CO., LTD.

Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two

Applicant before: Hongfujin Precise Industry (Shenzhen) Co., Ltd.

Applicant before: Hon Hai Precision Industry Co., Ltd.

GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170711

Termination date: 20180808