CN103572239A - Method for improving collimation of eccentric rotating magnetron sputtering system - Google Patents
Method for improving collimation of eccentric rotating magnetron sputtering system Download PDFInfo
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Abstract
The invention discloses a method for improving the collimation of an eccentric rotating magnetron sputtering system and belongs to the electro-mechanical field. The method comprises the following steps: 1), auxiliary magnetic poles are added in a position, which is close to a wall surface, outside an SIP sputtering chamber with a small-area moving magnetron, the distributing way of the auxiliary magnetic poles is arranged, and relative structural parameters are determined, so that the auxiliary magnetic poles can produce an axial magnetic field inside the SIP sputtering chamber; 2), the electrifying way of the auxiliary magnetic poles at any time can be determined according to the structural features of the magnetron; 3), the electrifying combination switching rule of the auxiliary magnetic poles in different time can be arranged according to the motion characteristics of the magnetron. According to the invention, by adding the auxiliary magnetic poles outside the SIP sputtering chamber, the axial magnetic field matched with the shape of the magnetron is produced, different electrifying combinations can be adopted at different times, a local axial magnetic field can be provided for different regions, the ionization rate of sputtered particles is improved, the collimation of the particles flying to a substrate is improved, side wall loss is reduced, and the film coating effect on patterns with high depth-to-width ratio is improved.
Description
Technical field
The invention belongs to semiconductor manufacturing facility design field, particularly a kind of collimation method that improves eccentric rotary magnetic control sputtering system.
Background technology
Sputter is most widely used a kind of physical gas phase deposition technology in current unicircuit coating process.Traditional d.c. sputtering (claiming again cathode sputtering) ultimate principle is as follows: in vacuum chamber, pass into working gas (as argon gas), make it under electric field action, be ionized into plasma body, particle wherein flies to target surface under self pedesis and extra electric field acting in conjunction, target atom is pounded to target surface flies to substrate and deposition growing becomes film.The remarkable advantage of d.c. sputtering is that device structure is simple, but it exists " three is low " defect: target utilization is low, sputter rate is low, sputtering yield is low.Therefore, introducing on the original basis the magnetron sputtering that magnetic field forms is a kind of sputtering method that is widely used at present business.
The general method of magnetron sputtering is, at the target back side, the magnetron that one or more groups has opposite magnetic pole is set, thereby improves near horizontal magnetic intensity target surface.Electronics can be strapped near target surface like this, extend its movement path, the probability of collision of increase and ar atmo, improves sputter rate and yield.Initial additional magnetic pole adopts stationary permanent magnet mostly, and the stationary magnetic field of its generation can pound " etching tunnel " by directing plasma at target surface, and on target surface, the etching degree difference of different zones is larger, causes waste of material.In order to improve target utilization, the concept of motion magnetron is suggested, and by small magnetron tube, the to-and-fro movement at the target back side obtains the long-time uniformity of target surface horizontal magnetic field.The people such as the Shi Zhongbing of Xinan Nuclear Physics Research Academy have proposed the straight-line design of magnetron of single-axis bidirectional for rectangle target, and the Japanese An of NEC Corporation island becomes the male double-shaft two-way translational motion design of magnetron that proposes to be applicable to circular target.Subsequently, rotating magnetron design has replaced translational motion design gradually.People's designs such as the auspicious emerging plastic glazing product Gong Si Yellow good fortune people in Jiangyin make magnetron at target behind eccentric rotary, and the Xinyu Fu of company of Applied Materials has proposed the irregularly shaped magnetron design around the rotation of chamber axis.In order further to improve target surface etching homogeneity, more complicated magnetron motion track has received researchist's concern.The people such as the Yigal Tomer of Intel Company have obtained the petal movement locus of magnetron by internal-gearing planet gear mechanism, the people such as the Richard Hong of Applied Materials and Chang Yu have successively proposed the design of planetary magnetron and bi-motor magnetron, and the people such as the Hu Wei of Tsing-Hua University have carried out bestly about motor speed ratio, choosing the further research with Optimal design of trajectory for planetary magnetron.
Motion magnetron magnetic control sputtering system through optimizing can reach the maximum target utilization of 70% left and right, compared to the target utilization of fixed magnetic pole 10%～30%, improves a lot, and its isotropic sputter feature is more satisfactory to planar depositions effect.But along with the development of unicircuit, on-chip high aspect ratio figure is that sputter coating technology has been brought challenge.Because the approximate cosine relation that is on probability of the angle between the target atom velocity reversal sputtering and target surface sea line distributes, therefore when being high aspect ratio figure plated film, can there is at step place the wedge angle of deposition, be that target atom collimation is not good, cannot enter smoothly through hole and deposit film forming at sidewall or bottom.
The deposition effect that improves high aspect ratio figure has many kinds of measures.Be the long sputter of throwing, increase the vertical range between substrate and target, this distance at least should be 50% of substrate diameter, and to improve effect better apart from larger.Another kind method is collimator, in substrate and target setting, there is the structure of a series of high aspect ratio vias, can guarantee to be like this good target atom of collimation by collimator, the exit angle target atom of large (velocity reversal approaches target surface sea line) can be beaten on collimator sidewall, cannot arrive substrate.The core concept of these two kinds of methods is all the larger a part of target particle of loss exit angle, and the cost that improves like this deposition collimation effect is that sputter deposition rate can reduce.
The another kind of method that improves deposition collimation is to adopt self-ionized plasma body (SIP) sputter, near target surface, obtains high density plasma, and by the target atom ionization sputtering, obtains target ion and the electronics of positively charged.The common methods that obtains high density plasma has two kinds, and a kind of is to add radio-frequency coil to increase ionization efficiency, and a kind of is to apply superpower at target surface.The patent that Applied Materials Inc is CN101847598A at application publication number has just adopted SIP sputter, and in its chamber structure, the target back side is provided with a magnetron moving in a circle around chamber axis.This magnetron area is less, thereby by being applied to power concentration on target surface in its corresponding zone, realizes small area superpower; In addition, this magnetron also has unbalanced magnetic field, and external magnetic poles is obviously better than interior permanent magnet.Unbalanced magnetic field is comprised of the horizontal magnetic field and the axial magnetic field that are parallel to target surface, wherein the effect of horizontal magnetic field is to increase plasma density, sputter rate, promote target atom ionization, axial magnetic field can extend to plasma body near substrate, stop it to be diffused into shielding case, guide target ion to move to substrate simultaneously.The research of carrying out around target utilization and target etch topography is main study subject mainly with horizontal magnetic field greatly, and for the collimation of target ion, axial magnetic field is major influence factors.For this reason, in the structure of patent CN101847598A in chamber arranged outside a series of auxiliary magnetic poles that are circumferentially arranged (permanent magnet or hot-wire coils permit can), but the method to set up of auxiliary magnetic pole can make asessory shaft to magnetic field concentration near chamber wall, not good enough to the collimation effect of substrate upper area particle.In the patent that Wei Wang is US6352629 in the patent No., propose the structure design of coaxial magnetic coil, by increasing chamber interior axial magnetic field, improved the coating effects to high aspect ratio figure on substrate.
In above patent, auxiliary magnetic pole is all static being arranged on outside chamber, i.e. the axial magnetic field of its generation is also static.Consider that magnetron is constantly motion, the region that is outside sputtering target ion on target surface is constantly to change in time, if provide localized axial magnetic field under being engraved in corresponding zone during energy, can further improve the collimation that ion flies to substrate, improve the coating effects to high aspect ratio figure.
Summary of the invention
The problem existing for above-mentioned prior art, the present invention proposes a kind of collimation method that improves eccentric rotary magnetic control sputtering system, it is characterized in that, the method is: 1) in the SIP sputtering chamber outside with small area motion magnetron, press close to wall place and add auxiliary magnetic pole, and the decoration form of auxiliary magnetic pole is set, choose electromagnetism elementary cell form, determine dependency structure parameter, make auxiliary magnetic pole in the inner axial magnetic field that produces of SIP sputtering chamber; 2) according to the constitutional features of magnetron, determine the step mode of arbitrary moment auxiliary magnetic pole; 3) according to the motion characteristics of magnetron, not energising in the same time combination switch law of auxiliary magnetic pole is set.
Described magnetron is circular magnetron, oval magnetron, shape of a hoof magnetron or trilateral magnetron.
Described auxiliary magnetic pole is the electromagnetism elementary cell of the outer a series of circumferential array of SIP sputtering chamber wall.
Described electromagnetism elementary cell is complete circle solenoid coil or coaxial circles arc current ring.
The number of described electromagnetism elementary cell determines according to SIP sputtering chamber actual characteristic.
The decoration form of described auxiliary magnetic pole arranges according to SIP sputtering chamber structure.
The beneficial effect of the invention: the present invention adds auxiliary magnetic pole by press close to wall place in the SIP sputtering chamber outside with small area motion magnetron, at SIP sputtering chamber middle part, produced the axial magnetic field matching with magnetron shape, do not adopting in the same time different energising combinations, can be to localized axial magnetic field be provided under different zones, further improved the ionization level of sputtering particle, improved the collimation that ion flies to substrate, reduce sidewall loss, improve the coating effects to high aspect ratio figure.
Accompanying drawing explanation
Fig. 1 is the design flow diagram of the inventive method;
Fig. 2 is SIP magnetic control sputtering system schematic diagram;
Wherein, 101 is small area magnetron, and 102 for treating sputtering target material, and 103 for being arranged at the auxiliary magnetic pole region of chamber outside, and 104 is substrate;
Fig. 3 is the Changing Pattern figure of the axial magnetic field intensity width between centers of single turn energising annulus different heights;
Fig. 4 (a) is that circumference is divided into 4 sections and corresponding circular arc numbering;
Fig. 4 (b) is that circumference is divided into 6 sections and corresponding circular arc numbering;
Fig. 4 (c) is that circumference is divided into 20 sections and corresponding circular arc numbering;
Axis magnetic field isogram when Fig. 5 (a) is No. 1 circular arc energising of quartern circumference-;
Axis magnetic field isogram when Fig. 5 (b) is No. 2 circular arc energising of quartern circumference-;
Axis magnetic field isogram when Fig. 5 (c) is No. 3 circular arc energising of quartern circumference-;
Axis magnetic field isogram when Fig. 5 (d) is No. 4 circular arc energising of quartern circumference-;
Axis magnetic field isogram when Fig. 5 (e) is quartern circumference-1, No. 2 circular arc energisings;
Axis magnetic field isogram when Fig. 5 (f) is quartern circumference-1, No. 3 circular arc energisings;
Axis magnetic field isogram when Fig. 5 (g) is quartern circumference-1,2, No. 3 circular arc energisings;
Fig. 5 (h) is axis magnetic field isogram when quartern circumference-all circular arc is switched on;
Axis magnetic field isogram when Fig. 6 (a) is six circumference in equal parts-1, No. 2 circular arc energisings;
Axis magnetic field isogram when Fig. 6 (b) is six circumference in equal parts-1, No. 3 circular arc energisings;
Axis magnetic field isogram when Fig. 6 (c) is six circumference in equal parts-1, No. 4 circular arc energisings;
Axis magnetic field isogram when Fig. 6 (d) is six circumference in equal parts-1,2, No. 3 circular arc energisings;
Axis magnetic field isogram when Fig. 6 (e) is six circumference in equal parts-1,2, No. 4 circular arc energisings;
Axis magnetic field isogram when Fig. 6 (f) is six circumference in equal parts-1,3, No. 5 circular arc energisings;
Axis magnetic field isogram when Fig. 6 (g) is six circumference in equal parts-1,2,3, No. 4 circular arc energisings;
Axis magnetic field isogram when Fig. 6 (h) is six circumference in equal parts-1,2,3, No. 5 circular arc energisings;
Axis magnetic field isogram when Fig. 6 (i) is six circumference in equal parts-1,2,4, No. 5 circular arc energisings;
Axis magnetic field isogram when Fig. 6 (j) is six circumference in equal parts-1,2,3,4, No. 5 circular arc energisings;
Axis magnetic field isogram when Fig. 7 (a) is six circumference in equal parts-1,2, No. 3 logical 1A electric currents of circular arc;
Fig. 7 (b) is the logical 1A electric current of six circumference in equal parts-No. 2 circular arc, axis magnetic field isogram during 1, No. 3 logical 0.5A electric current of circular arc;
Fig. 7 (c) is the logical 1A electric current of six circumference in equal parts-No. 2 circular arc, axis magnetic field isogram during 1, No. 3 lead to-1A electric current of circular arc;
Fig. 7 (d) is the logical 1A electric current of six circumference in equal parts-No. 2 circular arc, axis magnetic field isogram during 1, No. 3 lead to-0.5A electric current of circular arc;
Axis magnetic field isogram when Fig. 8 (a) is No. 1 circular arc energising of six circumference in equal parts-; ,
Axis magnetic field isogram when Fig. 8 (b) is No. 1 circular arc energising of eight equal parts circumference-;
Axis magnetic field isogram when Fig. 8 (c) is No. 1 circular arc energising of 20 circumference in equal parts-;
Fig. 9 is oval magnetron;
Figure 10 is oval magnetron auxiliary magnetic pole axis magnetic field isogram;
Figure 11 is that oval magnetron auxiliary magnetic pole parameter n is even number;
Figure 12 is circular magnetron;
Figure 13 (a) is a kind of shape of a hoof magnetron proposing in Chinese patent CN1914351A;
Figure 13 (b) is a kind of shape of a hoof magnetron proposing in United States Patent (USP) 7686928B2;
Figure 14 is shape of a hoof magnetron auxiliary magnetic pole axis magnetic field isogram;
Figure 15 divides equally 30 sections of circumference label schematic diagram by target surface;
Figure 16 is shape of a hoof magnetron conductive waveform figure;
Figure 17 (a) is the circular arc conductive waveform of shape of a hoof magnetron reference numeral 1;
Figure 17 (b) is the circular arc conductive waveform of shape of a hoof magnetron reference numeral 2;
Figure 17 (c) is the circular arc conductive waveform of shape of a hoof magnetron reference numeral 3;
Figure 17 (d) is the circular arc conductive waveform of shape of a hoof magnetron reference numeral 4;
Figure 17 (e) is the circular arc conductive waveform of shape of a hoof magnetron reference numeral 5;
Figure 18 is trilateral magnetron;
Figure 19 is trilateral magnetron auxiliary magnetic pole axis magnetic field figure;
Figure 20 is trilateral magnetron conductive waveform figure.
Embodiment
Below by embodiment, and by reference to the accompanying drawings, present method is done more specifically bright.
Be illustrated in figure 1 the design flow diagram of the inventive method; The process of the inventive method is as follows: 1) in the SIP sputtering chamber outside with small area motion magnetron, press close to wall place and add auxiliary magnetic pole, and the decoration form of auxiliary magnetic pole is set, determine dependency structure parameter, make auxiliary magnetic pole in the inner axial magnetic field that produces of SIP sputtering chamber; 2) according to the constitutional features of magnetron, determine the step mode of arbitrary moment auxiliary magnetic pole; 3) according to the motion characteristics of magnetron, not energising in the same time combination switch law of auxiliary magnetic pole is set.
The circular flat SIP magnetic control sputtering system of take is example, and its model schematic diagram as shown in Figure 2.Fig. 3 is the Changing Pattern figure of the axial magnetic field intensity width between centers of single turn energising annulus different heights, can find out that magnetic field concentration is in electric current loop near zone, and along with the increase of width between centers, the magneticstrength rate of decay is fast.If select complete circle solenoid coil as auxiliary magnetic pole, the axial magnetic field of its generation will be pressed close to chamber wall very much.In above-mentioned circular flat SIP sputtering chamber outside, press close to wall 20 complete circle solenoid coils are set, when selecting one or more solenoid coil energising, the approximate circle annulated column that the axial magnetic field of generation is correspondence position.Hence one can see that, and the complete circle solenoid coil of usining is comparatively single in change in shape as the axial magnetic field of the auxiliary magnetic pole generation of elementary cell, the form fit of more difficult realization to different magnetrons.Therefore, below the another kind of electromagnetism elementary cell of weight analysis---the Distribution Characteristic of Magnetic Field of coaxial circles arc current ring.
As described in US Patent No. 6352629, in chamber outer setting coaxial solenoids, can produce axial magnetic field in chamber interior, now complete circle coil is on average divided into multi-section circular arc and to different section circular arc numberings, as Fig. 4 (a) is depicted as, circumference is divided into 4 sections and corresponding circular arc numbering.When coil is divided into 4 sections, have 15 kinds
different energising situations.Fig. 5 (a), 5 (b), 5 (c), 5 (d) are the axis magnetic fields obtaining while switching on separately respectively to 4 sections of circular arcs, Fig. 5 (e), 5 (f) are the distributions obtaining during to two sections of circular arcs energisings of adjacent and offside, the distribution obtaining when Fig. 5 (g), 5 (h) are to 3 sections of circular arcs and all circular arc is switched on simultaneously.From result, can find out, axial magnetic field is distributed in hot-wire coil peripheral region substantially, not hard to imagine, if not adopting in the same time multi-form energising combination, can collimate to the target ion of different zones.
As shown in Fig. 4 (b), 4 (c), be respectively circumference is divided into 6 sections, 20 sections and corresponding circular arc numbering, from Fig. 4 (b), 4 (c), the hop count being divided when circular coil increases, and the permutation and combination number of the difference energising situation of its correspondence also can significantly increase.If Fig. 6 (a), 6 (b), 6 (c) are the axis magnetic fields obtaining while switching on to 2 sections of circular arcs simultaneously, Fig. 6 (d), 6 (e), 6 (f) are the distributions obtaining while simultaneously switching on to 3 sections of circular arcs, Fig. 6 (g), 6 (h), 6 (i) are the distributions obtaining while simultaneously switching on to 4 sections of circular arcs, and Fig. 6 (j) is the distribution obtaining while simultaneously switching on to 5 sections of circular arcs.When changing the electrical current size of different circular arcs, corresponding axis magnetic field also can correspondingly change.Axis magnetic field isogram when Fig. 7 (a) is six circumference in equal parts-1,2, No. 3 logical 1A electric currents of circular arc; 7 (b), 7 (c), 7 (d) are respectively the logical 1A electric currents of middle circular arc to six circumference in equal parts, axis magnetic field isogram when correspondence is given both sides circular arc logical 0.5A ,-1A ,-0.5A electric current.When middle circular arc and the logical inverse current of adjacent circular arc, the middle axial magnetic field zone of action can be reduced, but in both sides, can produce inversion axis to field region simultaneously, is unfavorable for target ion to fly to the guiding of substrate.Shown in Fig. 8 (a), 8 (b), 8 (c), be respectively and divide axis magnetic field isogram in 6 sections, 8 sections, 20 sections corresponding single circular arc energising situations, can find out: the Circular Arc of dividing equally is more, every section of independent axis magnetic field producing of circular arc more approaches circular distribution, better with circular magnetron zone of action matching degree; Corresponding magneticstrength peak value is less, and effective area is the closer to wall.
Embodiment mono-: circular (ellipse) magnetron
Circular or ellipse is comparatively common magnetron shape, the Nonequilibrium magnetic keyholed back plate proposing in European patent EP 1067577A2 as people such as Wada, as shown in Figure 9.As seen from the figure, the central angle that the major axis end points of oval magnetron and target surface center form is about 120 °, the axial magnetic field matching so should cover 1/3rd circumference at any time, the outer circular arc electric current loop auxiliary magnetic pole number arranging of chamber should be 3n (n=1,2,3......), and be carved with n adjacent magnetic pole when arbitrary and pass to the electric current waiting greatly in the same way, corresponding axis magnetic field as shown in figure 10.As seen from Figure 10, the axial magnetic field that auxiliary magnetic pole produces conforms to magnetron shape substantially, and it is main, and effectively the zone of action is relatively near chamber wall, and this is conducive to reduce the loss that ion flies to chamber wall.
3n circular arc auxiliary magnetic pole correspondence is divided into 3n central angle by target surface and is
region, be numbered 1,2 ..., 3n.Take the judgment criteria of magnetron center as magnetron present position: when n is during as odd number, if magnetron is centered close to the sector region that is numbered m, to be numbered m, m ± 1,
magnetic pole collude to etc. large electric current (exceed if required [1,3n] scope is corresponding adds or deduct 3n); When n is even number, if magnetron is centered close to the region that m, the fan-shaped medullary ray of m+1 two surround, shadow region as shown in figure 11, to being numbered
..., m, m+1,
magnetic pole collude to etc. large electric current ([1,3n] scope is corresponding adds or deduct 3n if required numbering exceeds).Maximum position error between the axial magnetic field that magnetron and auxiliary magnetic pole produce is the distance of half circular arc central angle,
the associated description in embodiment bis-is asked for an interview in the detailed signal of relevant maximum position error.
Circular magnetron and oval magnetron are similar, as seen from Figure 12, the central angle that the diameter end points of circular magnetron and target surface center form is about 90 °, 4n (n=1 need be set, 2,3......) individual elementary cell, synchronization wherein continuous n unit such as passes at the large electric current in the same way, obtains the axial magnetic field that quadrntnt arc produces it is covered.
Embodiment bis-: shape of a hoof magnetron
The people such as Gong have proposed a kind of selectable dual position magnetron in Chinese patent CN1914351A, and it can not realize respectively sputter and two functions of cleaning target in the same time, and its profile is as horse-hof shape, as shown in Figure 13 (a).When state in sputtering target material, this magnetron is position shown in solid line in figure, and the outer part of target, moves in a circle around target surface center.Shape of a hoof magnetron also appears in United States Patent (USP) 7686928B2, the dual magnetron structure that this patent proposes can realize sputter and two functions of cleaning equally, different is, and it is distributed to different magnetrons by the two and is responsible for, wherein for sputter function be exactly the shape of a hoof magnetron near target surface periphery, as shown in Figure 13 (b).
Shape of a hoof magnetron and oval magnetron shape are similar, and difference is that the shape of a hoof emphasizes the width homogeneity of magnetron two ends and middle portion, and the Distribution of Magnetic Field that the step mode of single size of current obtains for middle both sides by force a little less than.Therefore, adopt the adjacent circular arc of multistage to pass to the mode of different currents simultaneously, and suitably increase the size of current of both sides circular arc, so that gained axial magnetic field has class horse-hof shape circle distribution comparatively uniformly.
Circumference is divided into 30 sections, adjacent 5 sections of circular arcs energising wherein at any time, wherein circular arc electrical current in two ends is I, and middle three sections of circular arcs are 0.5I, and the axis magnetic field obtaining is as Figure 14.By result figure, can be found out, the shape of a hoof profile of the axial magnetic field shape obtaining incomplete coupling magnetron, but basic guarantee being circumferentially evenly distributed of width, meet the core geometric properties of shape of a hoof magnetron.
Simply provide the control mode of auxiliary magnetic pole energising rule below.
As mentioned above, circumference is divided into 30 sections, and be numbered counterclockwise 1,2,3......30, as Figure 15, meanwhile target surface is also correspondingly divided into 30 sector regions, each region central angle is π/15.The desirable magnetic field of following should be consistent with the characteristics of motion of magnetron constantly, is not changing continuously between in the same time, but because the division numbers of circumference is limited, can only not realize Discrete Change between in the same time.Using the judgment basis of shape of a hoof magnetron medullary ray (symmetry axis) as magnetron position, when medullary ray falls within, be numbered m(2≤m≤28) region in time, to the logical size of circular arc that is numbered m-1, m, m+1 for the electric current of 0.5I, to being numbered the circular arc of m-2, m+2, to lead to size be the electric current of I; As m=1,2,29,30 time, only need when calculating, reference numeral suitably add deduct 30, and actual energising form is constant.When magnetron carries out uniform circular motion, the effective conduction time of arbitrary circular arc unit in a period of motion T is T/6, and waveform is as Figure 16, and all the other times are off-position.Suppose magnetron medullary ray enter numbering 1 region the moment be starting point, the circular arc conductive waveform of reference numeral 1,2,3,4,5 is as shown in Figure 17 (a), 17 (b), 17 (c), 17 (d), 17 (e).
As previously mentioned, the Discrete Change of axial magnetic field can and the continuous motion of magnetron reality between there is error.The rotating speed of shape of a hoof magnetron is generally 50rpm to 100rpm, take 75rpm as example, and the lasting time of every kind of switch-on regime of auxiliary magnetic pole is
be about 0.0267s.The axial magnetic field position that auxiliary magnetic pole produces and the maximum deviation of magnetron physical location betide when magnetron medullary ray has just entered or horse back will leave a certain numbering area, and position deviation central angle is π/30rad.
Embodiment tri-: trilateral magnetron
Fu has proposed the trilateral magnetron shown in Figure 18 in No. 6306265th, United States Patent (USP), and it is arranged on the target back side equally, summit and target surface center be approximate overlap and take as the center of circle, do uniform circular motion.This magnetron has 25 outer magnets and 6 or 10 inner magnets, and the contrary and outer magnet of inside and outside magnet polarity is better than inner magnet and forms unbalanced magnetic field.It carves 1/6 area that covers target surface at any time, also its drift angle size of capable of regulating.In order to maintain SIP sputter, drift angle max-thresholds is 90 °, and the area coverage of magnetron any time is target surface 1/4.
In order to cut down triangulation in the oval magnetic field that single hop circular arc is produced, need to be in interpolation reversed magnetic field, Yuan Chang both sides.Circumference is divided into 12 sections, adjacent 4 sections of circular arcs energising wherein at any time, wherein in the middle of two sections of circular arc electric currents be I, two ends electric current is-0.75I to obtain axis magnetic field as Figure 19.Can find out, the axial magnetic field shape that auxiliary magnetic pole produces and the trilateral gap of expection are larger, if think the leg-of-mutton drift angle of further sharpening sideline, need to increase reversed magnetic field, both sides intensity, this can exert an influence to the chamber scope outside target area, is unfavorable for the ionic control in target area.
Simply provide the control mode of auxiliary magnetic pole energising rule below.
As mentioned above, circumference is divided into 12 sections, and be numbered counterclockwise 1,2,3......12, target surface is also correspondingly divided into 12 sector regions, each region central angle is π/6.Using the judgment basis of trilateral magnetron medullary ray (symmetry axis) as magnetron position, when medullary ray falls within, be numbered m and m+1(2≤m≤10) the region that surrounds of fan-shaped medullary ray in time, to the logical size of circular arc that is numbered m, m+1 for the electric current of I, to being numbered the logical size of circular arc of m-1, m+2, be-electric current of 0.75I; As m=1,11,12 time, only need when calculating, reference numeral suitably add deduct 12, and actual energising form is constant.When magnetron carries out uniform circular motion, the effective conduction time of arbitrary circular arc unit in a period of motion T is T/3, and waveform is as Figure 20, and all the other times are off-position.The axial magnetic field position that auxiliary magnetic pole produces and the maximum deviation central angle of magnetron physical location are π/12rad.
The above; be only the present invention's embodiment preferably, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (6)
1. a collimation method that improves eccentric rotary magnetic control sputtering system, it is characterized in that, the method is: 1) in the SIP sputtering chamber outside with small area motion magnetron, press close to wall place and add auxiliary magnetic pole, and the decoration form of auxiliary magnetic pole is set, determine dependency structure parameter, make auxiliary magnetic pole in the inner axial magnetic field that produces of SIP sputtering chamber; 2) according to the constitutional features of magnetron, determine the step mode of arbitrary moment auxiliary magnetic pole; 3) according to the motion characteristics of magnetron, not energising in the same time combination switch law of auxiliary magnetic pole is set.
2. a kind of collimation method that improves eccentric rotary magnetic control sputtering system according to claim 1, is characterized in that, described magnetron is circular magnetron, oval magnetron, shape of a hoof magnetron or trilateral magnetron.
3. a kind of collimation method that improves eccentric rotary magnetic control sputtering system according to claim 1, is characterized in that, described auxiliary magnetic pole is the electromagnetism elementary cell of the outer a series of circumferential array of SIP sputtering chamber wall.
4. a kind of collimation method that improves eccentric rotary magnetic control sputtering system according to claim 3, is characterized in that, described electromagnetism elementary cell is complete circle solenoid coil or coaxial circles arc current ring.
5. a kind of collimation method that improves eccentric rotary magnetic control sputtering system according to claim 3, is characterized in that, the number of described electromagnetism elementary cell determines according to SIP sputtering chamber actual characteristic.
6. a kind of collimation method that improves eccentric rotary magnetic control sputtering system according to claim 1, is characterized in that, the decoration form of described auxiliary magnetic pole arranges according to SIP sputtering chamber structure.
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| US5593551A (en) * | 1993-05-05 | 1997-01-14 | Varian Associates, Inc. | Magnetron sputtering source for low pressure operation |
| US6352629B1 (en) * | 2000-07-10 | 2002-03-05 | Applied Materials, Inc. | Coaxial electromagnet in a magnetron sputtering reactor |
| CN101545094A (en) * | 2008-03-28 | 2009-09-30 | 应用材料公司 | Rectangular magnetron with assistant edge magnets |
| CN101847598A (en) * | 2001-11-14 | 2010-09-29 | 应用材料有限公司 | Be used for the sputter and the self-ionized and inductively coupled plasma of sputter again |
-
2013
- 2013-11-15 CN CN201310575131.8A patent/CN103572239B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5593551A (en) * | 1993-05-05 | 1997-01-14 | Varian Associates, Inc. | Magnetron sputtering source for low pressure operation |
| US6352629B1 (en) * | 2000-07-10 | 2002-03-05 | Applied Materials, Inc. | Coaxial electromagnet in a magnetron sputtering reactor |
| CN101847598A (en) * | 2001-11-14 | 2010-09-29 | 应用材料有限公司 | Be used for the sputter and the self-ionized and inductively coupled plasma of sputter again |
| CN101545094A (en) * | 2008-03-28 | 2009-09-30 | 应用材料公司 | Rectangular magnetron with assistant edge magnets |
Non-Patent Citations (1)
| Title |
|---|
| 胡伟等: "磁控溅射设备中铜靶刻蚀形貌的仿真计算研究", 《真空科学与技术学报》, vol. 32, no. 10, 31 October 2012 (2012-10-31), pages 907 - 912 * |
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| Publication number | Publication date |
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| CN103572239B (en) | 2015-10-28 |
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