CN103631283A - Semiconductor device and temperature control method thereof and test system - Google Patents
Semiconductor device and temperature control method thereof and test system Download PDFInfo
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- CN103631283A CN103631283A CN201210300101.1A CN201210300101A CN103631283A CN 103631283 A CN103631283 A CN 103631283A CN 201210300101 A CN201210300101 A CN 201210300101A CN 103631283 A CN103631283 A CN 103631283A
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Abstract
The invention discloses a semiconductor device and a temperature control method thereof, and a test system. The semiconductor device comprises at least one temperature control unit and at least one heating unit. The temperature control unit is used for response to an external control signal. The temperature control unit responds to a first enabled signal of the external control signal to control the temperature of the heating unit, raising the temperature from a first work temperature to a second work temperature. According to the invention, the number of test stations and the required test space are reduced.
Description
Technical field
The present invention relates to a kind of semiconductor device and temperature-controlled process thereof and test macro.
Background technology
In the process of product of producing semiconductor device, conventionally need to carry out various functions test in a plurality of different temperature, for example temperature conditions is 45 ℃, 85 ℃, 95 ℃, 105 ℃ or 125 ℃.Prior art, for the test condition of different temperatures, often provides required probe temperature by increasing testing station.Yet the way of this increase testing station needs larger space to carry out accommodating tester table, and can increase significantly production cost, and the test duration can be elongated while transporting product between testing station.
Summary of the invention
In view of this, the object of the invention is to propose a kind of semiconductor device and temperature-controlled process thereof and test macro, use the problem that prior art is addressed that solves.
The present invention proposes a kind of semiconductor device, and it comprises at least one temperature control unit and at least one heating unit.Temperature control unit operates in order to react on an external control signal of semiconductor device outside.Heating unit couples temperature control unit.Temperature control unit reacts on the first command signal of external control signal and controls the temperature of heating unit, is warming up to the second working temperature according to this from the first working temperature.
In one embodiment of this invention, when temperature control unit receives the second command signal from external control signal, temperature control unit reacts on the second command signal and controls the temperature of heating unit, is warming up to the 3rd working temperature according to this from the second working temperature.
In one embodiment of this invention, semiconductor device also comprises logic control element.Logic control element couples temperature control unit.Logic control element, according to the feedback result of each temperature control unit, transmits the first feedback signal when reaching the second working temperature, also can when reaching the 3rd working temperature, transmit the second feedback signal.
The another temperature-controlled process that proposes a kind of semiconductor device of the present invention, it comprises the following steps.Provide tester table to control the running of semiconductor device.Tester table transmits the first command signal to the temperature control unit of semiconductor device.Temperature control unit reacts on the first command signal and controls the temperature of the heating unit of semiconductor device, is warming up to the second working temperature according to this from the first working temperature.
A kind of test macro of the another proposition of the present invention.Test macro comprises tester table and semiconductor device.Semiconductor device comprises at least one temperature control unit and at least one heating unit.Temperature control unit operates in order to react on the control of tester table.Heating unit couples temperature control unit.Temperature control unit reacts on the first command signal of tester table and controls the temperature of heating unit, is warming up to the second working temperature according to this from the first working temperature.
Beneficial effect of the present invention is, based on above-mentioned, in semiconductor device of the present invention, configured heating unit, when the specific temperature of test, can control the temperature of the heating unit in semiconductor device, to carry out functional test in specific temperature, thereby reduce the quantity of testing station and the required test space.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below.
Accompanying drawing explanation
Accompanying drawing is below a part for instructions of the present invention, has illustrated example embodiment of the present invention, principle of the present invention is described together with the description of accompanying drawing and instructions.
Fig. 1 is the schematic diagram according to the test macro of one embodiment of the invention.
Fig. 2 is the schematic diagram according to the probe temperature of one embodiment of the invention.
Fig. 3 is the test flow chart according to one embodiment of the invention.
Fig. 4 is the schematic diagram according to the test macro of another embodiment of the present invention.
Fig. 5 is the process flow diagram according to the temperature-controlled process of the semiconductor device of one embodiment of the invention.
Wherein, description of reference numerals is as follows:
100A, 100B: test macro
110: tester table
120,120A: semiconductor device
130,130A, 130B: temperature control unit
140_1,140_2,140A_1,140A_n, 140B_1,140B_m: heating unit
150: logic control element
A0 ~ A6: between test section
CS: correction signal
ES1, ES2: enable signal
FBS1, FBS2: feedback signal
F0: room temperature
F1, F2, F3: working temperature
S310～S360: each step of the testing process of one embodiment of the invention
S510～S550: each step of the temperature-controlled process of the semiconductor device of one embodiment of the invention
T1 ~ T7: time point
Embodiment
With detailed reference to embodiments of the invention, and described embodiment is described in the accompanying drawings.Yet concept of the present invention can many multi-form embodiment and should not be construed as limited to the embodiment that set forth herein.In addition, in drawings and the embodiments, use the element/member of same numeral to represent identical or similar portions.
Fig. 1 is the schematic diagram according to the test macro of one embodiment of the invention.Fig. 2 is the schematic diagram according to the probe temperature of one embodiment of the invention.Fig. 3 is the test flow chart according to one embodiment of the invention.Please refer to Fig. 1, Fig. 2 and Fig. 3.Test macro 100A comprises tester table 110 and semiconductor device 120.Semiconductor device 120 to be tested comprises temperature control unit 130 and heating unit 140_1,140_2.Tester table 110 is in order to the various functions of measuring semiconductor device 120.And semiconductor device 120 can be chip or the packaging body of integrated circuit.Heating unit 140_1,140_2 couple temperature control unit 130.Note that the not quantity of limit temperature control module or heating unit of the present invention.
In Fig. 2, assumed temperature F0 is room temperature, and the temperature conditions of test can be working temperature F1 and F2, or increases by a working temperature F3 again, or increases similarly other working temperature again.And A0 to A6 represents the interval between different time points between test section.Note that working temperature F3 is greater than working temperature F2, and working temperature F2 is greater than working temperature F1.
A0 between test section, semiconductor device 120 is in tester table 110 outsides.
As shown in step S310, at time point T1, start to enter A1 between test section.Semiconductor device 120 is written into tester table 110 and tester table 110 well heaters own start to heat up.And at time point T2, represent for example to reach working temperature F1(85 ℃).
As shown in step S320, A2(time point T2 to T3 between test section), semiconductor device 120 is in working temperature F1, and tester table 110 can carry out to semiconductor device 120 the various functions test of first stage.
As shown in step S330, at time point T3, tester table 110 can transmit enable signal ES1 and be sent to semiconductor device 120 to semiconductor device 120(or by the external control signal with enable signal ES1).Now, the temperature control unit 130 of semiconductor device 120 reacts on tester table 110(or external control signal) control, and according to the temperature of enable signal ES1 control heating unit 140_1,140_2, from working temperature F1(for example make according to this self-temperature of semiconductor device 120,85 ℃) be for example warming up to working temperature F2(, 105 ℃).
In addition, temperature control unit 130 can detect the intensification situation of heating unit 140_1 and 140_2, reach the time point T4 of working temperature F2, transmitting feedback signal FBS1 to tester table 110, so that tester table 110 is learnt the average working temperature of current semiconductor device 120.
As shown in step S340, A4(time point T4 to T5 between test section), semiconductor device 120 is in working temperature F2, and tester table 110 can carry out to semiconductor device 120 the various functions test of subordinate phase.
In another embodiment, if tester table 110 wants to increase the test condition of a working temperature F3 again.As shown in step S350, at time point T5, tester table 110 can transmit enable signal ES2 and be sent to semiconductor device 120 to semiconductor device 120(or by the external control signal with enable signal ES2).Now, the temperature control unit 130 of semiconductor device 120 reacts on tester table 110(or external control signal) control, and according to the temperature of enable signal ES2 control heating unit 140_1,140_2, from working temperature F2(for example make according to this self-temperature of semiconductor device 120,105 ℃) be for example warming up to working temperature F3(, 125 ℃).
Similarly, temperature control unit 130 can detect the temperature of heating unit 140_1 and 140_2, is reaching the time point T6 of working temperature F3, transmits feedback signal FBS2 to tester table 110.So as shown in step S360, A6(time point T6 to T7 between test section), semiconductor device 120 is in working temperature F3, and tester table 110 can carry out to semiconductor device 120 the various functions test of phase III.
In addition, A2(time point T2 to T3 between test section), tester table 110 can transmit a correction signal CS, and temperature control unit 130 carries out the temperature correction of working temperature F1 according to correction signal CS to semiconductor device 120.For example, correction signal CS represents that tester table has heated up and reached 85 ℃ of temperature, so temperature control unit 130 need be 85 ℃ by the temperature synchronous correction that semiconductor device 120 detected at present.Note that Tc numerical value of the present invention is not limited with the cited numerical value of this embodiment.
In addition, the circuit that heating unit 140_1,140_2 can form for resistance, plain conductor or other consuming components, and temperature control unit 130 utilizes current flow to control the temperature range of heating unit 140_1,140_2.
Fig. 4 is the schematic diagram according to the test macro of another embodiment of the present invention.Refer to Fig. 2 and Fig. 4.Test macro 100B comprises tester table 110 and semiconductor device 120A.And test macro 100B is similar to the framework of the test macro 100A of Fig. 1.Semiconductor device 120A comprise logic control element 150, temperature control unit 130A, 130B, heating unit 140A_1 ..., 140A_n and heating unit 140B_1 ..., 140B_m.Use a plurality of heating units can make the intensification of semiconductor device 120A be heated more average.
In this embodiment, feedback signal FBS1 or FBS2 can be sent to tester table 110 by logic control element 150.Logic control element 150 can comprise the circuit (not illustrating) with door, wherein receives respectively the feedback result of temperature control unit 130A, 130B with each input end of door, and with the output terminal of door in order to output feedback signal FBS1 or FBS2.So logic control element 150 can, according to the feedback result of temperature control unit 130A and 130B, transmit feedback signal FBS1 to tester table 110 when reaching working temperature F2.And logic control element 150 can, when reaching working temperature F3, transmit feedback signal FBS2 to tester table 110, so that tester table 110 is learnt the average working temperature of current semiconductor device 120.
The content disclosing based on above-described embodiment, can converge the whole temperature-controlled process that goes out a kind of general semiconductor device.Clearer, Fig. 5 illustrates the process flow diagram into the temperature-controlled process of the semiconductor device of one embodiment of the invention.Please refer to Fig. 1 and Fig. 5, the temperature-controlled process of the present embodiment can comprise the following steps.
As shown in step S510, provide tester table 110 to control the running of semiconductor device 120.
Then as shown in step S520, tester table 110 transmits enable signal ES1 to the temperature control unit 130 of semiconductor device 120.
Then, as shown in step S530, temperature control unit 130 reacts on enable signal ES1 and controls the heating unit 140_1 of semiconductor device 120, the temperature of 140_2, is warming up to the second working temperature according to this from the first working temperature.
In another one exemplary embodiment, when step S540, tester table 110 transmits enable signal ES2 to the temperature control unit 130 of semiconductor device 120.Then, as shown in step S550, temperature control unit 130 reacts on enable signal ES2 and controls the heating unit 140_1 of semiconductor device 120, the temperature of 140_2, is warming up to the 3rd working temperature according to this from the second working temperature.
Note that the 3rd working temperature (for example, 95 ℃) is greater than the second working temperature (for example, 85 ℃), and the second working temperature is greater than the first working temperature (for example, 45 ℃).
In sum, the present invention has configured at least one heating unit in semiconductor device to be tested, when the specific temperature of test, can control temperature by the heating unit in semiconductor device, to carry out functional test in specific temperature, thereby can carry out two or more temperature tests at same tester table, and effectively reduce the quantity of testing station and the required test space.
Although the present invention discloses as above with embodiment; so it is not in order to limit the present invention, any the technical staff in the technical field, without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion depending on claims person of defining.
Claims (12)
1. a semiconductor device, is characterized in that, described semiconductor device comprises:
At least one temperature control unit, operates in order to react on an external control signal of described semiconductor device outside; And
At least one heating unit, couples described temperature control unit;
Wherein, described temperature control unit reacts on one first enable signal of described external control signal and controls the temperature of described heating unit, is warming up to one second working temperature according to this from one first working temperature.
2. semiconductor device as claimed in claim 1, it is characterized in that, when described temperature control unit receives second enable signal from described external control signal, described temperature control unit reacts on described the second enable signal and controls the temperature of described heating unit, is warming up to one the 3rd working temperature according to this from described the second working temperature.
3. semiconductor device as claimed in claim 2, is characterized in that, described semiconductor device also comprises:
One logic control element, couples described temperature control unit, and described logic control element, according to the feedback result of temperature control unit described in each, transmits one first feedback signal when reaching described the second working temperature.
4. semiconductor device as claimed in claim 3, is characterized in that, described logic control element, according to the feedback result of temperature control unit described in each, transmits one second feedback signal when reaching described the 3rd working temperature.
5. a temperature-controlled process for semiconductor device, is characterized in that, described temperature-controlled process comprises step:
Provide a tester table to control the running of described semiconductor device;
Described tester table transmits one first enable signal to a temperature control unit of described semiconductor device; And
Described temperature control unit reacts on described the first enable signal and controls the temperature of a heating unit of described semiconductor device, is warming up to one second working temperature according to this from one first working temperature.
6. the temperature-controlled process of semiconductor device as claimed in claim 5, is characterized in that, described temperature-controlled process also comprises step:
When described temperature control unit receives second enable signal from described tester table, described temperature control unit reacts on described the second enable signal and controls the temperature of described heating unit, is warming up to one the 3rd working temperature according to this from described the second working temperature.
7. the temperature-controlled process of semiconductor device as claimed in claim 5, it is characterized in that, from described the first working temperature, be warming up to the process of described the second working temperature, described semiconductor device transmits one first feedback signal to described tester table when reaching described the second working temperature.
8. the temperature-controlled process of semiconductor device as claimed in claim 5, it is characterized in that, from described the second working temperature, be warming up to the process of described the 3rd working temperature, described semiconductor device transmits one second feedback signal to described tester table when reaching described the 3rd working temperature.
9. a test macro, is characterized in that, described test macro comprises:
One tester table; And
Semiconductor device, comprising:
At least one temperature control unit, operates in order to react on the control of described tester table; And
At least one heating unit, couples described temperature control unit;
Wherein, described temperature control unit reacts on one first enable signal of described tester table and controls the temperature of described heating unit, is warming up to one second working temperature according to this from one first working temperature.
10. test macro as claimed in claim 9, it is characterized in that, when described temperature control unit receives second enable signal from described tester table, described temperature control unit reacts on described the second enable signal and controls the temperature of described heating unit, is warming up to one the 3rd working temperature according to this from described the second working temperature.
11. test macros as claimed in claim 10, is characterized in that, described semiconductor device also comprises:
One logic control element, couples described temperature control unit, and described logic control element, according to the feedback result of temperature control unit described in each, transmits one first feedback signal to described tester table when reaching described the second working temperature.
12. test macros as claimed in claim 11, is characterized in that, described logic control element, according to the feedback result of temperature control unit described in each, transmits one second feedback signal to described tester table when reaching described the 3rd working temperature.
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| CN201210300101.1A CN103631283B (en) | 2012-08-22 | 2012-08-22 | Semiconductor device and temperature-controlled process thereof and test macro |
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| CN201210300101.1A CN103631283B (en) | 2012-08-22 | 2012-08-22 | Semiconductor device and temperature-controlled process thereof and test macro |
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| CN103631283B CN103631283B (en) | 2015-10-14 |
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| CN104777854A (en) * | 2015-04-16 | 2015-07-15 | 福州瑞芯微电子有限公司 | Temperature control method for semiconductor device |
| CN108010856A (en) * | 2016-10-31 | 2018-05-08 | 中芯国际集成电路制造(上海)有限公司 | Tester table |
| CN109144123A (en) * | 2018-08-15 | 2019-01-04 | 王晓勇 | A kind of semiconductor test temperature control equipment and control method |
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| CN104777854A (en) * | 2015-04-16 | 2015-07-15 | 福州瑞芯微电子有限公司 | Temperature control method for semiconductor device |
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| CN109144123A (en) * | 2018-08-15 | 2019-01-04 | 王晓勇 | A kind of semiconductor test temperature control equipment and control method |
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| CN103631283B (en) | 2015-10-14 |
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