CN103668088A - Method of improving film-forming quality of aluminum, silicon and copper - Google Patents
Method of improving film-forming quality of aluminum, silicon and copper Download PDFInfo
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- CN103668088A CN103668088A CN201210342576.7A CN201210342576A CN103668088A CN 103668088 A CN103668088 A CN 103668088A CN 201210342576 A CN201210342576 A CN 201210342576A CN 103668088 A CN103668088 A CN 103668088A
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Abstract
The invention discloses a method of improving film-forming quality of aluminum, silicon and copper. The method comprises the following steps: (1), completing aluminum, silicon and copper pore-filling by a film-forming chip in a high-temperature cavity of 350 DEG C-450 DEG C in a physical sputtering manner, so that an aluminum, silicon and copper film is formed on the film-forming chip; (2), enabling the film-forming chip to enter a cooling cavity for cooling to a temperature lower than 200 DEG C within 10 seconds-30 seconds; and (3), in a low-temperature cavity of 150 DEG C-250 DEG C, completing growth of an aluminum, silicon and copper metal wire by the film-forming chip. The method disclosed by the invention improves aluminum, silicon and copper film-forming quality on the premise of not affecting pore-filling effect and improves aluminum, silicon and copper film-forming quality, so that the film-forming chip is smaller in metal guide wire resistance and good in stability, and improves apparatus performance; and meanwhile, appearance and encapsulation quality of the film-forming chip are greatly improved.
Description
Technical field
The present invention relates to the processing method of the raising physics of metals sputter filling perforation quality in a kind of semiconductor applications, particularly relate to a kind of method of novel raising aluminium copper silicon quality of forming film.
Background technology
The application of physics of metals sputter process for filling hole is very extensive, and especially at semiconductor applications, sputtering technology directly affects resistance and other physical propertys of semiconducter device.Aluminium copper silicon high temperature (more than 400 ℃) sputter, as metal process for filling hole, because aluminium silicon-copper films contains a small amount of silicon and metallic copper, makes the film after sputter greatly reduce metallic aluminium puncture, so receive much concern.But simultaneously, existing aluminium copper silicon physics process for filling hole growing film, defect due to technique itself, in film process due to high temperature, make a small amount of nonmetal silicon containing in aluminium silicon-copper films, in temperature-fall period, making film surface after sputter produce a large amount of silicon separates out, cause subsequent technique operation incomplete, cause the interconnected contact of metal wire lattice surface, cause lattice amplificationly, present surfaceness variation, seriously cause metal wire resistance to increase, affect device performance, thereby cause component failure, and have a strong impact on appearance of device (as shown in Figure 1).
According to the binary phase diagram (as shown in Figure 2) of many scholars' research discovery and metallic aluminium and nonmetal silicon, analyze, when nonmetal silicon mixes with metallic aluminium, temperature is greatly when more than 350 ℃, mainly concentrate as metallic aluminium phase, when temperature reduces, nonmetal silicon will manifest mutually, causes that silicon separates out.So prevent that main path that silicon is separated out is exactly to concentrate film forming under high temperature, maintain metallic aluminium phase, after metallic aluminium hardens completely, fast cooling, just can prevent that silicon from separating out.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method of novel raising aluminium copper silicon quality of forming film.The method is by existing technique is improved, thus raising aluminium copper silicon quality of forming film, and do not affecting under the prerequisite of device property, reduce silicon and separate out, improve yield and the visual appearance of device.
For solving the problems of the technologies described above, the method for raising aluminium copper silicon quality of forming film of the present invention, comprises step:
1) film forming wafer, in the high temperature chamber of 350～450 ℃, in the mode of physical sputtering, completes the filling perforation of aluminium copper silicon, makes on film forming wafer, forms aluminium silicon-copper films;
2) film forming wafer enters into cooling chamber, in 10～30s(second) in, be quickly cooled to below 200 ℃;
3), in the low temperature cavity of 150～250 ℃, film forming wafer completes the growth of aluminium copper silicon metal wire.
In described step 1), completing the filling perforation of aluminium copper silicon is in high temperature chamber, through 5～30s(second), complete the filling perforation of aluminium copper silicon; The thickness of aluminium silicon-copper films is 0.1～1 μ m, and the silicone content in aluminium silicon-copper films is 0.9～1.1%, copper content is 0.43～0.57%.
Described step 2) in, cooling mode comprises: ventilation or pressurization.
In described step 3), the thickness of aluminium copper silicon metal wire is 1～10 μ m, and the silicone content in aluminium copper silicon metal wire is 0.9～1.1%, copper content is 0.43～0.57%.
The present invention is by improving existing aluminium copper silicon film, by high low temperature 2 steps, complete the growth of the filling perforation of aluminium copper silicon and metal wire, do not affecting under the prerequisite of filling perforation effect, improved aluminium copper silicon quality of forming film, make the plain conductor resistance of gained film forming wafer less, and have good stability, at utmost improve device performance; Meanwhile, film forming wafer appearance and package quality have greatly been improved.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is the OM(opticmicroscope that the silicon in film forming wafer is separated out phenomenon) figure;
Fig. 2 is the binary phase diagram of Al-Si;
Fig. 3 is the schema of aluminium copper silicon film-forming process of the present invention;
Fig. 4 is the block diagram of aluminium copper silicon film-forming process of the present invention;
Fig. 5 is the TEM(transmission electron microscope that adopts the film forming wafer of method of the present invention and the formation of existing aluminium copper silicon film-forming process) figure, wherein, A is existing aluminium copper silicon film-forming process, B is method of the present invention.
Embodiment
The method of raising aluminium copper silicon quality of forming film of the present invention, as shown in Figure 3-4, comprises step:
1) film forming wafer is in the high temperature chamber of 350～450 ℃, and in conventional physical sputtering mode, (vacuum is less than 5 * 10
-8torr), through 5～30 seconds, complete fast the filling perforation of aluminium copper silicon, make on film forming wafer, form aluminium silicon-copper films;
Wherein, the thickness of aluminium silicon-copper films is 0.1～1 μ m, and the silicone content in aluminium silicon-copper films is 0.9～1.1%, copper content is 0.43～0.57%.
2) the film forming wafer with aluminium silicon-copper films enters into cooling chamber, by the type of cooling of ventilating or pressurizeing, by 350～450 ℃ of beginnings, in 10～30 seconds, is quickly cooled to below 200 ℃.
3), in the low temperature cavity of 150～250 ℃, film forming wafer completes the growth of aluminium copper silicon metal wire.Wherein, the thickness of aluminium copper silicon metal wire is 1～10 μ m, and the silicone content in aluminium copper silicon metal wire is 0.9～1.1%, copper content is 0.43～0.57%.
For above-mentioned steps, adopt more concrete processing condition to implement:
Film forming wafer is in the high temperature chamber of 400 ℃, in conventional physical sputtering mode, form fast after aluminium silicon-copper films 0.2 μ m, film forming wafer transfer is to cooling chamber, through 15 seconds, below fast cooling to 200 ℃, in the low temperature cavity of conveyance to 200 ℃, carry out aluminium copper silicon metal wire and grow up after 4 μ m again, technique finishes, the TEM figure of the film forming wafer of gained, as shown in Figure 5.As shown in Figure 5, compare with existing aluminium copper silicon film-forming process (the disposable film forming of high temperature), adopt method of the present invention, silicon is separated out phenomenon to be had obviously and alleviates.
Film forming wafer of the present invention forms fast after the filling perforation of aluminium copper silicon in high temperature chamber, wafer enters into cooling chamber, fast cooling is cooling, enter again and in low temperature cavity, form aluminium copper silicon metal wire, whole technological process is simple, and the present invention is for metallic aluminium copper silicon physical sputtering technology, can greatly improve sputtered film quality, and the yield and the visual appearance that improve device.
Claims (5)
1. a method that improves aluminium copper silicon quality of forming film, is characterized in that, comprises step:
1) film forming wafer, in the high temperature chamber of 350～450 ℃, in the mode of physical sputtering, completes the filling perforation of aluminium copper silicon, makes on film forming wafer, forms aluminium silicon-copper films;
2) film forming wafer enters into cooling chamber, in 10～30 seconds, is cooled to below 200 ℃;
3), in the low temperature cavity of 150～250 ℃, film forming wafer completes the growth of aluminium copper silicon metal wire.
2. the method for claim 1, is characterized in that: in described step 1), completing the filling perforation of aluminium copper silicon is in high temperature chamber, through 5～30 seconds, completes the filling perforation of aluminium copper silicon.
3. the method for claim 1, is characterized in that: in described step 1), the thickness of aluminium silicon-copper films is 0.1～1 μ m;
Silicone content in aluminium silicon-copper films is 0.9～1.1%, copper content is 0.43～0.57%.
4. the method for claim 1, is characterized in that: described step 2), cooling mode comprises: ventilation or pressurization.
5. the method for claim 1, is characterized in that: in described step 3), the thickness of aluminium copper silicon metal wire is 1～10 μ m;
Silicone content in aluminium copper silicon metal wire is 0.9～1.1%, copper content is 0.43～0.57%.
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| CN201210342576.7A CN103668088B (en) | 2012-09-14 | 2012-09-14 | Improve the method for aluminium copper silicon quality of forming film |
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| CN201210342576.7A CN103668088B (en) | 2012-09-14 | 2012-09-14 | Improve the method for aluminium copper silicon quality of forming film |
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| CN103668088A true CN103668088A (en) | 2014-03-26 |
| CN103668088B CN103668088B (en) | 2016-02-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113308676A (en) * | 2021-05-25 | 2021-08-27 | 西安微电子技术研究所 | Cavity processing method for realizing physical vapor deposition of aluminum-silicon-copper thick metal film |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06275555A (en) * | 1993-03-23 | 1994-09-30 | Kawasaki Steel Corp | Manufacture of semiconductor device |
| US5976971A (en) * | 1995-07-19 | 1999-11-02 | Ricoh Company, Ltd. | Fabrication process of a semiconductor device having an interconnection structure |
| US5994217A (en) * | 1996-12-16 | 1999-11-30 | Chartered Semiconductor Manufacturing Ltd. | Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers |
| US6372645B1 (en) * | 1999-11-15 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company | Methods to reduce metal bridges and line shorts in integrated circuits |
| CN102383097A (en) * | 2010-09-01 | 2012-03-21 | 上海宏力半导体制造有限公司 | Method for preparing aluminum-silicon-copper films |
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2012
- 2012-09-14 CN CN201210342576.7A patent/CN103668088B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06275555A (en) * | 1993-03-23 | 1994-09-30 | Kawasaki Steel Corp | Manufacture of semiconductor device |
| US5976971A (en) * | 1995-07-19 | 1999-11-02 | Ricoh Company, Ltd. | Fabrication process of a semiconductor device having an interconnection structure |
| US5994217A (en) * | 1996-12-16 | 1999-11-30 | Chartered Semiconductor Manufacturing Ltd. | Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers |
| US6372645B1 (en) * | 1999-11-15 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company | Methods to reduce metal bridges and line shorts in integrated circuits |
| CN102383097A (en) * | 2010-09-01 | 2012-03-21 | 上海宏力半导体制造有限公司 | Method for preparing aluminum-silicon-copper films |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113308676A (en) * | 2021-05-25 | 2021-08-27 | 西安微电子技术研究所 | Cavity processing method for realizing physical vapor deposition of aluminum-silicon-copper thick metal film |
| CN113308676B (en) * | 2021-05-25 | 2023-02-24 | 西安微电子技术研究所 | Cavity treatment method for aluminum-silicon-copper thick metal film physical vapor deposition |
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