CN103675042A - CMOS-MEMS (complementary metal oxide semiconductor-micro-electromechanical system) capacitive humidity sensor - Google Patents
CMOS-MEMS (complementary metal oxide semiconductor-micro-electromechanical system) capacitive humidity sensor Download PDFInfo
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Abstract
The invention relates to a CMOS-MEMS (complementary metal oxide semiconductor-micro-electromechanical system) capacitive humidity sensor which is characterized by comprising upper interdigital electrodes and lower interdigital electrodes, wherein the lower electrodes penetrate a SiO2 oxide layer and are arranged on the same surface of a silicon substrate; the upper electrodes are arranged above the lower electrodes; humidity-sensitive mediums are filled between the upper electrodes and the lower electrodes, between the interdigital parts of the upper electrodes and between the interdigital parts of the lower electrodes; aluminum strips are arranged above the upper electrodes and positioned between the interdigital parts of the upper electrodes and the lower electrodes; humidity-sensitive mediums are filled between the aluminum strips and the upper electrodes; a cavity is formed in the silicon substrate under the upper electrodes and the lower electrodes, so that the lower electrodes and the humidity-sensitive mediums between the interdigital parts of the lower electrodes are directly in contact with the air; the interdigital parts of the upper electrodes and the interdigital parts of the lower electrodes coincide in the height direction; the humidity-sensitive mediums are polyimide. The CMOS-MEMS capacitive humidity sensor is quick in response, high in sensitivity, wide in output range, high-temperature-resistant, small in humidity error and good in temperature characteristic and long stability.
Description
Technical field
The present invention relates to a kind of CMOS MEMS capacitance type humidity sensor, especially a kind of capacitance type humidity sensor of and CMOS process compatible, belongs to MEMS device design and manufacturing technology field.
Background technology
Moisture measurement is a main application aspect of MEMS technology, and the detection of humidity and control technology have obtained widespread use.Such as military affairs, meteorology, agricultural, industry (particularly weaving, electronics, food), medical treatment, the aspects such as building and household electrical appliance need to strictly be monitored humidity, some occasion even needs humidity control and report to the police, such as air handling system, and greenhouse control system, warehouse monitoring system.The needs of humidity detection, control have been promoted to the progress to humidity sensor.
The preparation of tradition humidity sensor all adopts MEMS Bulk micro machining, complex process, and processing cost is expensive, and is difficult to realize standardization.CMOS technology is the mainstream technology that current IC manufactures, and its process technology is advanced and ripe.CMOS MEMS can utilize and set up powerful IC industrial infrastructure, this facility technical maturity, and codes and standards, once the device of developing success can be mass; On the other hand, CMOS MEMS is easily integrated by MEMS device and circuit monolithic.Therefore, the MEMS based on CMOS foundry has higher performance and lower price.Capacitive monolithic Integrated Humidity Sensor adopts aluminium interdigital structure, and interdigital structure capacitance type humidity sensor is a kind of main Types of the micro-humidity sensor of silicon, and its ultimate principle is that humidity is changed to the variation that is converted to electric capacity.At interdigited capacitor and above resistor stripe, cover one deck humidity-sensitive medium layer-polyimide, relative humidity in external environment changes, the airborne vapour molecule of wet sensory material absorption/desorption, the specific inductive capacity of polyimide is changed, thereby cause the change of interdigital capacitor value, humicap value reduces, and by capacitive detection circuit, just capacitance can be converted into voltage or current signal is exported.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of CMOS MEMS capacitance type humidity sensor is provided, with CMOS process compatible, this transducer sensitivity is high, and range ability is large, and has improved manufacturability, low cost of manufacture.
According to technical scheme provided by the invention, described CMOS MEMS capacitance type humidity sensor, is characterized in that: comprise the top electrode of interdigitated and the bottom electrode of interdigitated, bottom electrode is through SiO
2oxide layer is arranged on the same surface of silicon base, and top electrode is positioned at the top of bottom electrode, between top electrode and bottom electrode, top electrode interdigital between, bottom electrode interdigital between fill humidity sensitive medium; Aluminum strip is set above described top electrode, and aluminum strip, between top electrode, bottom electrode interdigital, is filled humidity sensitive medium between aluminum strip and top electrode; In silicon base under described top electrode and bottom electrode, form cavity, the humidity sensitive medium of interdigital of bottom electrode and bottom electrode is directly contacted with air.
The interdigital of interdigital and bottom electrode of described top electrode overlaps in short transverse.
Described top electrode and bottom electrode adopt metallic aluminium.
Described humidity sensitive medium is polyimide.
The invention has the beneficial effects as follows: rapidly, highly sensitive, output area is wide, high temperature resistant in CMOS MEMS capacitance type humidity sensor response of the present invention, and humidity hysteresis error is little, and temperature characterisitic and long-time stability are good; And polyimide is widely used in semiconductor technology as passivation layer or planarization, completely compatible with CMOS technique, and utilize circuit technology processing formerly, aftertreatment technology after mode, guaranteed the integrality of CMOS technique and not being changed and interrupting of process sequences; The present invention is easy to realize the microminiaturized and intelligent of mass manufacture and sensor.
Accompanying drawing explanation
Fig. 1 is sectional view of the present invention.
Fig. 2 is vertical view of the present invention.
Fig. 3 is the schematic diagram of the mask plate of sputter bottom electrode.
Fig. 4 is the schematic diagram of the mask plate of sputter top electrode.
Fig. 5 is the schematic diagram of the mask plate of sputter aluminum strip.
Sequence number in figure is: bottom electrode 1, top electrode 2, aluminum strip 3, humidity sensitive medium 7, silicon base 8, cavity 9, SiO
2oxide layer 10, bottom electrode press welding block 11, top electrode press welding block 21, aluminum strip press welding block 31.
Embodiment
Below in conjunction with concrete accompanying drawing, the invention will be further described.
As shown in Figure 1 and Figure 2: described CMOS MEMS capacitance type humidity sensor comprises the top electrode 2 of interdigitated and the bottom electrode 1 of interdigitated, SiO is drawn, passed to bottom electrode 1 by bottom electrode press welding block 11
2 oxide layer 10 is arranged on the same surface of silicon base 8, top electrode 2 is drawn, is positioned at the top of bottom electrode 1 by top electrode press welding block 21, the interdigital of interdigital and bottom electrode 1 of top electrode 2 overlaps in short transverse, between top electrode 2 and bottom electrode 1, top electrode 2 interdigital between, bottom electrode 1 interdigital between fill humidity sensitive medium 7; Above described top electrode 2, by aluminum strip press welding block 31, draw aluminum strip 3, aluminum strip 3, between top electrode 2, bottom electrode 1 interdigital, is filled humidity sensitive medium 7 between aluminum strip 3 and top electrode 2; In silicon base 8 under described top electrode 2 and bottom electrode 1, form cavity 9, the humidity sensitive medium 7 that bottom electrode 1 and bottom electrode 1 are interdigital can directly contact with air;
Described top electrode 2 and bottom electrode 1 adopt metallic aluminium; Described humidity sensitive medium 7 is polyimide.
The method of preparing above-mentioned CMOS MEMS capacitance type humidity sensor, adopts following processing step:
(1) one deck SiO that grows in silicon base 8
2form SiO
2oxide layer 10, at SiO
2in oxide layer 10, adopt mask plate splash-proofing sputtering metal aluminium as shown in Figure 3, and etching forms bottom electrode 1;
(2) adopt spin-coating method spin coating one deck polyimide, then adopt mask plate splash-proofing sputtering metal aluminium as shown in Figure 4, and etching formation top electrode 2, the interdigital of interdigital and bottom electrode 1 of top electrode 2 overlaps in short transverse;
(3) adopt to carve painting method spin coating one deck polyimide again, then adopt mask plate splash-proofing sputtering metal aluminium as shown in Figure 5, and etching forms aluminum strip 3, aluminum strip 3 is between top electrode 2, bottom electrode 1 interdigital;
(4) in the back side of silicon base 8 deposit one deck silicon nitride barrier, and etch corrosion window on 8 at the bottom of at the bottom of silicon, then utilize the anisotropic etch of silicon from the back side of silicon base 8 to SiO
2oxide layer 10 direction corrosion, the etchant solution of selecting is to SiO
2the corrosion rate of oxide layer 10 is the corrosion rate to silicon base 8 much smaller than this etchant solution, when silicon base 8 erodes to SiO
2during oxide layer 10 lower surface, first step corrosion finishes; Second step corrosion is by SiO
2oxide layer 10 is corroded to the lower surface of bottom electrode 1; After two step etch completes, in the silicon base 8 of bottom electrode 1 bottom, form cavity 9, and the humidity sensitive medium of interdigital of bottom electrode 1 and bottom electrode 1 can contact with air;
(5) last again by the silicon nitride barrier removal at 8 back sides at the bottom of silicon.
CMOS MEMS capacitance type humidity sensor of the present invention is when work, moisture in environment is by the humidity sensitive medium absorption/desorption between top electrode and bottom electrode, thereby the medium specific inductive capacity between top electrode and bottom electrode is changed, produce corresponding capacitance variation, capacitance is along with humidity changes monotone variation, capacitance is mutually corresponding with humidity value, forms by humidity the sensing translation function to electric capacity.
Claims (4)
1. a CMOS MEMS capacitance type humidity sensor, is characterized in that: comprise the top electrode (2) of interdigitated and the bottom electrode (1) of interdigitated, bottom electrode (1) is through SiO
2oxide layer (10) is arranged on the same surface of silicon base (8), top electrode (2) is positioned at the top of bottom electrode (1), between top electrode (2) and bottom electrode (1), top electrode (2) interdigital between, bottom electrode (1) interdigital between fill humidity sensitive medium (7); In the top of described top electrode (2), aluminum strip (3) is set, aluminum strip (3) is positioned between top electrode (2), bottom electrode (1) interdigital, between aluminum strip (3) and top electrode (2), fills humidity sensitive medium (7); The upper cavity (9) that forms of silicon base (8) under described top electrode (2) and bottom electrode (1), directly contacts the humidity sensitive medium (7) of interdigital of bottom electrode (1) and bottom electrode (1) with air.
2. CMOS MEMS capacitance type humidity sensor as claimed in claim 1, is characterized in that: the interdigital coincidence in short transverse of the interdigital and bottom electrode (1) of described top electrode (2).
3. CMOS MEMS capacitance type humidity sensor as claimed in claim 1, is characterized in that: described top electrode (2) and bottom electrode (1) adopt metallic aluminium.
4. CMOS MEMS capacitance type humidity sensor as claimed in claim 1, is characterized in that: described humidity sensitive medium (7) is polyimide.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104627947A (en) * | 2015-02-09 | 2015-05-20 | 江西师范大学 | CMOS (complementary metal oxide semiconductor) humidity sensor and forming method of CMOS humidity sensor |
| CN104634832A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | CMOS MEMS capacitance-type humidity sensor and preparation method thereof |
| CN104833710A (en) * | 2015-05-25 | 2015-08-12 | 东南大学 | Wireless passive MEMS (micro-electromechanical system) humidity sensor and manufacturing method thereof |
| CN105241927A (en) * | 2015-09-25 | 2016-01-13 | 上海集成电路研发中心有限公司 | Humidity sensor and preparation method thereof |
| US20160322303A1 (en) * | 2014-01-21 | 2016-11-03 | Semiconductor Manufacturing International (Shanghai) Corporation | Semiconductor device |
| CN110346423A (en) * | 2019-07-02 | 2019-10-18 | 浙江省北大信息技术高等研究院 | A kind of CMOS-MEMS humidity sensor |
| CN111044583A (en) * | 2019-11-27 | 2020-04-21 | 南通大学 | Humidity sensor chip |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI614589B (en) * | 2017-01-18 | 2018-02-11 | 明新科技大學 | A moisture control device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101620197A (en) * | 2009-07-23 | 2010-01-06 | 东南大学 | Rapid response CMOS relative humidity sensor |
| US20110226041A1 (en) * | 2004-04-02 | 2011-09-22 | ChipSensors Limited. | Integrated CMOS porous sensor |
| CN102253091A (en) * | 2011-04-19 | 2011-11-23 | 东南大学 | Capacitive relative humidity sensor based on graphene oxide |
| CN103018289A (en) * | 2013-01-04 | 2013-04-03 | 东南大学 | Capacitive humidity sensor |
-
2013
- 2013-11-30 CN CN201310633540.9A patent/CN103675042B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110226041A1 (en) * | 2004-04-02 | 2011-09-22 | ChipSensors Limited. | Integrated CMOS porous sensor |
| CN101620197A (en) * | 2009-07-23 | 2010-01-06 | 东南大学 | Rapid response CMOS relative humidity sensor |
| CN102253091A (en) * | 2011-04-19 | 2011-11-23 | 东南大学 | Capacitive relative humidity sensor based on graphene oxide |
| CN103018289A (en) * | 2013-01-04 | 2013-04-03 | 东南大学 | Capacitive humidity sensor |
Non-Patent Citations (1)
| Title |
|---|
| 彭韶华等: "CMOS工艺兼容的温湿度传感器", 《半导体学报》, vol. 26, no. 7, 31 July 2005 (2005-07-31), pages 1428 - 1433 * |
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| US9875965B2 (en) * | 2014-01-21 | 2018-01-23 | Semiconductor Manufacturing International (Shanghai) Corporation | Semiconductor device |
| US20160322303A1 (en) * | 2014-01-21 | 2016-11-03 | Semiconductor Manufacturing International (Shanghai) Corporation | Semiconductor device |
| CN104627947A (en) * | 2015-02-09 | 2015-05-20 | 江西师范大学 | CMOS (complementary metal oxide semiconductor) humidity sensor and forming method of CMOS humidity sensor |
| CN104627947B (en) * | 2015-02-09 | 2016-02-10 | 江西师范大学 | Cmos humidity sensor and forming method thereof |
| CN105480934A (en) * | 2015-02-09 | 2016-04-13 | 江西师范大学 | CMOS (Complementary Metal Oxide Semiconductor) humidity sensor |
| CN104634832A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | CMOS MEMS capacitance-type humidity sensor and preparation method thereof |
| CN104833710A (en) * | 2015-05-25 | 2015-08-12 | 东南大学 | Wireless passive MEMS (micro-electromechanical system) humidity sensor and manufacturing method thereof |
| CN105241927A (en) * | 2015-09-25 | 2016-01-13 | 上海集成电路研发中心有限公司 | Humidity sensor and preparation method thereof |
| CN105241927B (en) * | 2015-09-25 | 2018-02-27 | 上海集成电路研发中心有限公司 | A kind of humidity sensor and preparation method |
| CN110346423A (en) * | 2019-07-02 | 2019-10-18 | 浙江省北大信息技术高等研究院 | A kind of CMOS-MEMS humidity sensor |
| CN110346423B (en) * | 2019-07-02 | 2021-05-04 | 杭州未名信科科技有限公司 | CMOS-MEMS humidity sensor |
| CN111044583A (en) * | 2019-11-27 | 2020-04-21 | 南通大学 | Humidity sensor chip |
| CN111044583B (en) * | 2019-11-27 | 2021-07-06 | 南通大学 | Humidity sensor chip |
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