CN103762292A - LED packaging technology for using low-light-reflection black EMC to achieve high-light-reflection effect - Google Patents
LED packaging technology for using low-light-reflection black EMC to achieve high-light-reflection effect Download PDFInfo
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- CN103762292A CN103762292A CN201410020728.0A CN201410020728A CN103762292A CN 103762292 A CN103762292 A CN 103762292A CN 201410020728 A CN201410020728 A CN 201410020728A CN 103762292 A CN103762292 A CN 103762292A
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- Prior art keywords
- led
- emc
- led packaging
- light
- reflection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The invention discloses an LED packaging technology method for using low-light-reflection black EMC to achieve the high-light-reflection effect. According to the LED packaging technology, a layer of light-reflection materials is directly added to the surface of a black EMC support material, and high luminous efficiency of the black EMC support material can be achieved. The LED packaging technology method comprises the steps that injection molding is carried out to obtain an LED packaging support; on the premise that an electrode arranged inside the LED packaging support is in the open-circuit state, and an existing film layer addition technology is used for adding a layer of light-reflection materials to the inner wall of a formed LED reflection cup and a layer of light-reflection materials to the upper surface of a device; an LED packaging device based on the black EMC is obtained through the common technological process including adhesive dispensing, die bonding, lead bonding, potting and post curing. According to the LED packaging technology method for using low-light-reflection black EMC to achieve the high-light-reflection effect, due to the fact that the light-reflection layer is added, on the premise that the luminous efficiency of LED packaging is ensured, the purpose that the black EMC is applied to LED packaging is achieved, the cost of using the EMC to package an LED is reduced to a great extent, and the LED packaging technology method is simple, clear and good in practicability.
Description
Technical field
The present invention relates to LED packaging technology, specifically a kind ofly use low reflective black EMC capsulation material to reach the LED packaging technology of high reflecting effect.
Background technology
In recent years, since, LED (light-emitting diode), with energy-saving and environmental protection, a series of outstanding advantages such as volume is little, the life-span is long, reliability is high, is considered to replace the new type light source of traditional lighting.LED encapsulating material is from PPA, silica gel is until the PPA of the present first generation arrives the ceramic substrate of the second generation, until the EMC of the present third generation (epoxy molding compound, Chinese name: epoxy-plastic packaging material) material, has experienced technology upgrading and product renewal repeatedly.EMC material is simple with its high reliability, low cost, production technology, be applicable to the features such as large-scale production, is IC(integrated circuit) the main encapsulating material used during encapsulation, for it provides a kind of splendid solution in LED package application field.As the people such as Pardo ([1] Pardo, B., et al., Thermal resistance investigations on new leadframe-based LED packages and boards. Microelectronics Reliability, 2013. 53 (8): pp1084 – 1094.) to using the LED after EMC material package to carry out thermal resistance exploration, the people such as Jakovenko ([2] Jakovenko, J., et al., Design methodologies for reliability of SSL LED boards. Microelectronics Reliability, 2013. 53 (8): pp1076 – 1083.) to using the encapsulating structure of EMC material to be studied, result of study shows that in LED encapsulation, using EMC material is following important developing direction.
When EMC material is applied to LED encapsulation field, in order to reach, must there is high as far as possible light extraction efficiency, require EMC material to be required to be the white plastic that extinction is little, reflectivity is high.EMC is as brand-new plastic material for white, and because it is with high content of technology, production cost is high, thereby white EMC material price is higher, the high cost while causing with white EMC packaging LED chips.If can replace the white plastic of fetch long price to be applied to LED encapsulation field with the EMC plastic cement of black, guarantee that light extraction efficiency does not reduce simultaneously, the EMC encapsulating material cost when greatly reducing LED encapsulation, is that a new road is opened in the industrialization of LED encapsulation.Therefore the LED encapsulation that, realizes black EMC material becomes very meaningful.
summary of the invention
The object of this invention is to provide and a kind ofly use low reflective black EMC capsulation material to reach the LED packaging technology of high reflecting effect.This technique can make the light that epoxy resin EMC capsulation material that light reflection efficiency is very low can be good at LED chip to send reflect away, and increases the light output efficiency of LED.
the technical scheme that realizes the object of the invention is:
Use low reflective black EMC plastic packaging material to reach a LED packaging technology for high reflecting effect, on the reflector surface of low reflective epoxy resin black EMC capsulation material LED support, increase one deck reflectorized material.
The present invention uses low reflective black EMC capsulation material to reach the LED packaging technology of high reflecting effect, specifically comprises the steps:
1) make support: determine the LED packaging model structure of using black MEC stock support, material parameter, size, and injection mo(u)lding;
2) increase reflector layer: under the prerequisite that assurance internal stent electrode satisfies condition, adopt thin layer paint-on technique to increase one deck reflectorized material at the LED of moulding reflector inwall and device upper surface;
3) glue, die bond and Bonding: in the inner priority of the reflector through the reflective processing of step (2), carry out a glue, die bond and Bonding, realize the electrical interconnection of LED chip;
4) embedding: inject external sealant in the good package support reflector of electrical interconnection, external sealant adopts fluorescent material, epoxy resin, diffusant and curing agent etc. to mix;
5) after, solidify: the package support that embedding completes is put into baking box and toasted, and after colloid solidifies completely, obtains using the LED packaging of black EMC capsulation material.
Described LED package support be one by the cup die cavity body of black EMC capsulation material injection mo(u)lding, i.e. LED reflector.
Described reflectorized material comprises a kind of and contour reflective coating of white EMC material in metal A l, Ag, Pt, Au, Zn, Sn, In.
Described thin layer paint-on technique is prior art.
advantage of the present invention:
Use low reflective epoxy resin EMC capsulation material (as the EMC of black) to replace expensive white EMC capsulation material to be applied to LED encapsulation field, and increase one deck reflector layer at black EMC capsulation material, guarantee to use the LED of black EMC capsulation material encapsulation to there is higher light extraction efficiency, by reducing greatly EMC capsulation material, be applied in the cost in LED encapsulation.
Accompanying drawing explanation
Fig. 1 is process chart of the present invention;
Fig. 2 is the support schematic diagram that the present invention uses black EMC capsulation material;
Fig. 3 is that the present invention increases the support schematic diagram after reflector layer;
Fig. 4 is that the present invention completes the encapsulation schematic diagram after a glue, die bond and Bonding;
Fig. 5 is that the present invention completes the LED packaging schematic diagram after dosing technology and rear curing process;
Fig. 6 is that the present invention increases the support schematic diagram after reflector layer when selecting special electrode structure support;
Fig. 7 LED packaging schematic diagram after curing process after to be the present invention complete when selecting special electrode structure support.
In figure: 1. copper base electrode 2. black EMC material 3. reflector 4. insulation gap 5. reflector layers 6. insulation 7. crystal-bonding adhesive 8.LED chip 9. bonding wire 10. casting glue 11. new insulation positions of special construction copper base electrode 12., position.
Embodiment
The present invention will use low reflective epoxy resin EMC capsulation material (as the EMC of black) to be applied in LED packaging technology, replace white EMC material, and increase one deck reflectorized material on black EMC timbering material, make low reflective encapsulation can realize higher light extraction efficiency.
As shown in Figure 1, the present embodiment is to increase layer of metal aluminium Al at black EMC material surface to process chart of the present invention, and the supporting structure of use is general structure, as shown in Figure 2, will be further elaborated below:
1) make package support: determine timbering material and model structure that the present invention uses, as shown in Figure 2, select the 2 plastic packaging moulding of black EMC material, support is bowl cup-shaped 3, the electrode material that the LED support of the present embodiment is used is copper, copper base electrode 1 structure is slab construction, and between copper electrode 1, has insulation gap 4;
2) add reflector layer: the schematic cross-section that is illustrated in figure 3 black EMC material 3 package supports, utilize existing film adding technique to add the very thin metallic aluminium Al5 of one deck on black EMC material 3 surfaces, improve the light extraction efficiency of EMC material, the existing film adding technique that the present embodiment is used is physical gas phase deposition technology.For guaranteeing not occur short circuit in packaging body after adding one deck AL, the present embodiment is used mask to control coating interpolation scope, and insulation position 6 is chosen in reflector 3 side bottom, as shown in Figure 3, and then guarantees the not short circuit of package interior both positive and negative polarity;
3) die bond, Bonding.Appropriate crystal-bonding adhesive 7 on 1 of the copper base of support reflector 3 inside after having added metal level aluminium lamination 5, then pastes upper LED chip 8; The go between terminal of 9 bonding supports and LED chip, realizes the electrical interconnection of packaging body, as shown in Figure 4.
4) embedding.By 3 injection casting glues 10 in the good encapsulated reflecting cup of bonding, wherein casting glue 10 is that fluorescent material and curing agent etc. mixes together by epoxy resin, diffusant.
5) after, solidify.The package support that embedding is completed is put into baking box and is toasted, and after casting glue 10 solidifies completely, takes out cooling, and then obtains the LED packaging based on black capsulation material EMC, as shown in Figure 5.
In implementation process of the present invention, when selecting the support of specific substrate electrode 11 structures, new electrode insulation position 12 can be adjusted accordingly when adding reflector layer 5, will be more conducive to the use of mask.As Fig. 6 and Fig. 7 are respectively the device architecture after the encapsulating structure that added when selecting special electrode structure 11 support after reflector layer technique and rear curing process complete.
Claims (4)
1. use low reflective black EMC capsulation material to reach a LED packaging technology for high reflecting effect, it is characterized in that: the reflector surface at low reflective epoxy resin black EMC capsulation material LED support increases one deck reflectorized material.
2. LED packaging technology according to claim 1, is characterized in that: described reflectorized material comprises the high reflective coating of a kind of and white EMC material in metal A l, Ag, Pt, Au, Zn, Sn, In.
3. LED packaging technology according to claim 1, is characterized in that: described reflector be one by the cup die cavity body of black EMC capsulation material injection mo(u)lding.
4. use low reflective black EMC plastic packaging material to reach a packaging technology for the LED lamp of high reflecting effect, it is characterized in that: comprise the steps:
1) make support: determine the LED packaging model structure of using black MEC stock support, material parameter, size, and injection mo(u)lding;
2) increase reflector layer: under the prerequisite that assurance internal stent electrode satisfies condition, adopt thin layer paint-on technique to increase one deck reflectorized material at the LED of moulding reflector inwall and device upper surface;
3) glue, die bond and Bonding: in the inner priority of the reflector through the reflective processing of step (2), carry out a glue, die bond and Bonding, realize the electrical interconnection of LED chip;
4) embedding: inject external sealant in the good package support reflector of electrical interconnection, external sealant adopts fluorescent material, epoxy resin, diffusant and curing agent to mix;
5) after, solidify: the package support that embedding completes is put into baking box and toasted, and after colloid solidifies completely, obtains using the LED packaging of black EMC capsulation material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410020728.0A CN103762292A (en) | 2014-01-17 | 2014-01-17 | LED packaging technology for using low-light-reflection black EMC to achieve high-light-reflection effect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410020728.0A CN103762292A (en) | 2014-01-17 | 2014-01-17 | LED packaging technology for using low-light-reflection black EMC to achieve high-light-reflection effect |
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| CN103762292A true CN103762292A (en) | 2014-04-30 |
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| CN201410020728.0A Pending CN103762292A (en) | 2014-01-17 | 2014-01-17 | LED packaging technology for using low-light-reflection black EMC to achieve high-light-reflection effect |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847800A (en) * | 2017-03-28 | 2017-06-13 | 山东晶泰星光电科技有限公司 | QFN surface-adhered types RGB LED encapsulation modules and its manufacture method |
| CN108321283A (en) * | 2018-04-03 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of package support and its packaging method of specular removal ultraviolet LED |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106847800A (en) * | 2017-03-28 | 2017-06-13 | 山东晶泰星光电科技有限公司 | QFN surface-adhered types RGB LED encapsulation modules and its manufacture method |
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Application publication date: 20140430 |