CN103777127A - Measurement device for optical-electrical characteristics of light emitting diode - Google Patents
Measurement device for optical-electrical characteristics of light emitting diode Download PDFInfo
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- CN103777127A CN103777127A CN201210402060.7A CN201210402060A CN103777127A CN 103777127 A CN103777127 A CN 103777127A CN 201210402060 A CN201210402060 A CN 201210402060A CN 103777127 A CN103777127 A CN 103777127A
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Abstract
The invention discloses a measurement device for optical-electrical characteristics of a light emitting diode. The measurement device includes a container with a light input port and a light output port; a measurement module connected with the light output port of the container; a test-piece supporting desk located below the container and capable of supporting the to-be-tested light emitting diode; and a light gathering unit located between the container and the test-piece support desk.
Description
Technical field
The present invention discloses the measuring equipment of a light emitting diode photoelectric characteristic, particularly measures the device of a wafer pattern (wafer form) or crystal grain pattern (chip form) light emitting diode photoelectric characteristic about one.
Background technology
Integrating sphere is a hollow sphere unit, can offer on demand light input hole and light delivery outlet that quantity does not wait on spheroid, and sphere inner wall is the coating with diffusion and reflectivity properties.When the luminous flux that light emitting diode to be measured produces is injected integrating sphere from optical input, after the diffusion and reflection of integrating sphere inwall complexity, determine to be integrated the luminous flux that sphere inner wall absorbs according to the material of inside coating, all the other penetrate from light delivery outlet.The effect of integrating sphere is exactly to collect this kind by the luminous flux reflecting from all directions, and by special design, luminous power, waveform and the luminous flux of sampling light equipped at outlet port, can obtain the relevant parameter of light emitting diode after conversion.
Industry is used the isoparametric business machine IS of luminous power (instrument system) that measures light emitting diode at present, the integrating sphere diameter that it uses is at least 10 inches, and thering is a test piece seat 2 (its schematic diagram is as shown in Figure 2) and be directly fixed on the optical input (not shown) of integrating sphere, its design is only applicable to the measurement of LED encapsulation body.The pin 62 of light emitting diode TO packaging body 61 to be measured is directly inserted to test piece seat body 60, and test piece seat body 60 bottoms connect power supply unit (not shown) and inject in integrating sphere with the luminous flux that provides curtage that light emitting diode TO packaging body 61 to be measured is produced.
Summary of the invention
The measuring equipment that the invention provides a light emitting diode photoelectric characteristic, comprising: a container, and this container has an optical input and a smooth delivery outlet; One measurement module, this measurement module is connected with the light delivery outlet of container; One test piece plummer, is positioned at container below and can carries light emitting diode to be measured, and wherein test piece carrier-table surface has the reflectivity that the luminous flux producing with respect to light emitting diode to be measured is greater than 50%; And a smooth accumulation unit, between container and test piece plummer, wherein light accumulation unit inwall has the reflectivity that the luminous flux producing with respect to light emitting diode to be measured is greater than 50%.
According to one embodiment of present invention, wherein test piece plummer comprises a supporting body and is formed at the skim on supporting body, and this thin layer has by the luminous flux that light emitting diode to be measured is produced the material that is greater than 50% reflectivity and formed.
According to one embodiment of present invention, wherein light accumulation unit comprises a body and is formed at the skim of inner body wall, and this thin layer has by the luminous flux that light emitting diode to be measured is produced the material that is greater than 50% reflectivity and formed.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of instructions, and for above and other object of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Accompanying drawing explanation
Figure 1 shows that the structural drawing of light emitting diode photoelectric characteristic measuring equipment of the present invention.
Figure 2 shows that the schematic diagram of business machine IS (instrument system) the test piece seat of current industry use.
Embodiment
Technological means and effect of taking for reaching predetermined goal of the invention for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to the specific embodiment of the present invention, structure, feature and effect thereof, be described in detail as follows.
Figure 1 shows that disclosed light emitting diode photoelectric characteristic measuring equipment, it comprises: a container 10 is for example a hollow sphere unit, has an optical input 10A and a smooth delivery outlet 10B; One measurement module 11, this measurement module 11 is connected with the light delivery outlet 10B of container 10; One test piece plummer 12, is positioned at the below of container 10 and can carries light emitting diode to be measured 13; One smooth accumulation unit 14, between container 10 and test piece plummer 12; And a power supply unit 15, be positioned under test piece plummer 12.
In the present embodiment, container 10 is that a diameter is at least the integrating sphere (IntegratingSphere) of 2 inches.Test piece plummer 12 can carry light emitting diode to be measured 13, and wherein light emitting diode 13 is preferably wafer pattern or the crystal grain pattern of still un-encapsulated.Test piece plummer 12 surfaces have the reflectivity that the luminous flux that produces with respect to light emitting diode 13 to be measured is greater than 50%.In another embodiment, test piece plummer 12 comprises a supporting body and is formed at the skim (not shown) on supporting body, and wherein this thin layer has by the luminous flux that light emitting diode 13 to be measured is produced the material that is greater than 50% reflectivity and formed; For example: aluminium, copper, nickel, silver, chromium, gold or at least comprise the stupalith of iron, titanium, silicon, barium.In addition, the power supply unit 15 of a required curtage while providing light emitting diode 13 to measure is provided this device, while survey, curtage is transferred to the surface of light emitting diode 13 by 17 of the probes of two tool knuckles; The knuckle θ of its middle probe is preferably 30 degree to 150 degree, and the best is about 120 degree.In addition, import the effect of container 10 in order to increase the luminous flux that light emitting diode 13 to be measured is produced, between the optical input 10A of container 10 and test piece plummer 12, a smooth accumulation unit 14 is set, wherein light accumulation unit 14 inwalls have the reflectivity that the luminous flux that produces with respect to light emitting diode 13 to be measured is greater than 50%.In another embodiment, light accumulation unit comprises a body 14A and is formed at the skim 14B of body 14A inwall, and wherein this thin layer 14B has by the luminous flux that light emitting diode 13 to be measured is produced the material that is greater than 50% reflectivity and formed; For example: aluminium, copper, nickel, silver, chromium, gold or at least comprise the stupalith of iron, titanium, silicon, barium.For the luminous flux that light emitting diode 13 to be measured produces can all be imported in container 10, in the time measuring light emitting diode 13 photoelectric characteristic, light accumulation unit 14 must be coated test piece plummer 12 or completely coated light emitting diode 13 to be measured completely.Light accumulation unit 14 more comprises two perforates 16, can make the probe 17 of tool knuckle enter in light accumulation unit 14 to measure light emitting diode 13 through this perforate 16.
When the luminous flux that light emitting diode to be measured 13 produces is injected container 10 from optical input 10A, after the diffusion and reflection of container 10 inwall complexity, material according to inside coating determines the luminous flux being absorbed by container inner wall, all the other penetrate from light delivery outlet 10B, and then enter a measurement module 11, wherein measurement module more comprises a spectroscope (not shown).After converting via measurement module 11, can obtain the photoelectric characteristic of light emitting diode to be measured 13, wherein electric characteristics for example: forward bias (forward bias voltage, Vf), reverse-breakdown voltage, inverse current (reversed current, IR), difference and the forward bias instantaneous peak value of forward bias before and after heating; Wherein optical characteristics for example: light intensity (luminous intensity, Iv), peak wavelength (peak length, λ p), wavelength halfwidth (fullwidth at half maximun, FWHM), chromaticity coordinate (CIE), and main wavelength (dominatedlength, λ is d), colour purity (purity), and colour temperature (color temperature).
The method that measures light emitting diode photoelectric characteristic to be measured is as follows: a light emitting diode photoelectric characteristic measuring equipment 1 is as shown in Figure 1 provided, one LED wafer or crystal grain 13 are placed on test piece plummer 12, probe 17 by two tool knuckles enters in light accumulation unit 14 with a survey light emitting diode 13 through perforate 16, the curtage in the time measuring, power supply unit 15 being provided transfers to the surface of LED wafer or LED crystal particle, makes it luminous.The luminous flux producing is entered in container 10 by optical input 10A after light accumulation unit 14 optically focused, after the diffusion and reflection of container inner wall complexity, finally remains luminous flux and penetrates from light delivery outlet 10B.The signal of emitted luminous flux is conducted to a measurement module 11, via the spectroscope in measurement module 11, emitted luminous flux is carried out after specific program conversion, and then obtain the value of the photoelectric characteristic of this light emitting diode.
In a control group experiment, use another light emitting diode photoelectric characteristic measuring equipment to measure a light emitting diode, wherein the difference of the measuring equipment shown in this another measuring equipment and the present embodiment Fig. 1 is: this another measuring equipment does not have light accumulation unit 14 and test piece plummer 12 surfaces not to have reflecting effect.Metric data shows: when the luminous flux that light emitting diode produces enters the optical input of another measuring equipment container, its luminous flux attenuation rate is 9.2%; But use the measuring equipment shown in the present embodiment Fig. 1 to measure same light emitting diode, when the luminous flux that light emitting diode produces passes light accumulation unit 14 and enters the optical input of container, its luminous flux attenuation rate is 0.3%.Hence one can see that: the test piece carrier-table surface of measuring equipment has the luminous flux producing with respect to light emitting diode to be measured and is greater than 50% reflectivity and light accumulation unit inwall and has the luminous flux producing with respect to light emitting diode to be measured and be greater than 50% reflectivity, attenuation rate can effectively reduce luminous flux that light emitting diode produces and enter the optical input of container time, and then increase the accuracy that light emitting diode photoelectric characteristic measures.
According to the conventional material of the light emitting diode to be measured 13 described in embodiments of the invention as AlGaInP (AlGaInP) series, aluminum indium gallium nitride (AlGaInN) series, zinc paste (ZnO) series etc.The structure of active layer (not shown) is as single heterojunction structure (single heterostructure; SH), double-heterostructure (double heterostructure; DH), bilateral double-heterostructure (double-side double heterostructure; Or multi-layer quantum well (multi-quantumwell DDH); MQW).Moreover its luminous frequency spectrum can be adjusted by the physics or the tincture that change semiconductor monolayer or multilayer, the logarithm of adjusting quantum well also can change emission wavelength.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be not depart from technical solution of the present invention content, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (13)
1. the measuring equipment of a light emitting diode photoelectric characteristic, is characterized in that, the measuring equipment of this light emitting diode photoelectric characteristic comprises:
One container, this container has an optical input and a smooth delivery outlet;
One measurement module, this measurement module is connected with the light delivery outlet of this container;
One test piece plummer, is positioned at this container below and can carries light emitting diode to be measured, and wherein this test piece carrier-table surface has the reflectivity that is greater than 50% with respect to the luminous flux of light emitting diode generation to be measured; And
One smooth accumulation unit, between this container and this test piece plummer, wherein this light accumulation unit inwall has the reflectivity that is greater than 50% with respect to the luminous flux of light emitting diode generation to be measured.
2. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, is characterized in that: more comprise a power supply unit, to provide this light emitting diode to be measured required curtage.
3. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, it is characterized in that: this test piece plummer comprises a supporting body and be formed at the skim on supporting body, wherein this thin layer has by the luminous flux that light emitting diode to be measured is produced the material that is greater than 50% reflectivity and is formed.
4. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, it is characterized in that: this light accumulation unit comprises a body and be formed at the skim of inner body wall, wherein this thin layer has by the luminous flux that light emitting diode to be measured is produced the material that is greater than 50% reflectivity and is formed.
5. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, is characterized in that: this container is a hollow sphere unit.
6. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, is characterized in that: this light emitting diode to be measured is wafer form or the crystal grain form not encapsulating.
7. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 1, is characterized in that: two probes that more comprise measuring this light emitting diode to be measured.
8. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 7, is characterized in that: this light accumulation unit more comprises two perforates through the use of measurement for this probe.
9. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 7, is characterized in that: this probe is angled from a fixed angle.
10. the measuring equipment of light emitting diode photoelectric characteristic as claimed in claim 9, is characterized in that: this probe knuckle angle is between 30 degree to 150 degree.
The measuring equipment of 11. light emitting diode photoelectric characteristics as claimed in claim 1, is characterized in that: this measurement module more comprises a spectroscope.
The measuring equipment of 12. light emitting diode photoelectric characteristics as claimed in claim 1, is characterized in that: this light accumulation unit is completely coated this test piece plummer in the time measuring.
The measuring equipment of 13. light emitting diode photoelectric characteristics as claimed in claim 1, is characterized in that: this light accumulation unit is completely coated this light emitting diode to be measured in the time measuring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210402060.7A CN103777127A (en) | 2012-10-19 | 2012-10-19 | Measurement device for optical-electrical characteristics of light emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210402060.7A CN103777127A (en) | 2012-10-19 | 2012-10-19 | Measurement device for optical-electrical characteristics of light emitting diode |
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| CN103777127A true CN103777127A (en) | 2014-05-07 |
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| CN201210402060.7A Pending CN103777127A (en) | 2012-10-19 | 2012-10-19 | Measurement device for optical-electrical characteristics of light emitting diode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104075879A (en) * | 2014-06-06 | 2014-10-01 | 致茂电子(苏州)有限公司 | Light emitting diode measurement device |
| CN105044583A (en) * | 2015-06-05 | 2015-11-11 | 江苏理工学院 | Test apparatus for LED junction temperature K coefficient |
| CN111289227A (en) * | 2020-03-20 | 2020-06-16 | 江西照世科技有限公司 | LED lamp string detector based on Internet of things |
| CN113324738A (en) * | 2021-06-02 | 2021-08-31 | 深圳市长方集团股份有限公司 | Flip LED chip testing arrangement |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5369481A (en) * | 1992-05-08 | 1994-11-29 | X-Rite, Incorporated | Portable spectrophotometer |
| TW201038928A (en) * | 2009-04-24 | 2010-11-01 | Epistar Corp | Measurement apparatus for light-emitting diode |
| CN102326090A (en) * | 2009-02-20 | 2012-01-18 | Qmc株式会社 | LED chip testing device |
| CN102735982A (en) * | 2011-03-29 | 2012-10-17 | 三星Led株式会社 | Inspection apparatus and method of light emitting device |
-
2012
- 2012-10-19 CN CN201210402060.7A patent/CN103777127A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5369481A (en) * | 1992-05-08 | 1994-11-29 | X-Rite, Incorporated | Portable spectrophotometer |
| CN102326090A (en) * | 2009-02-20 | 2012-01-18 | Qmc株式会社 | LED chip testing device |
| TW201038928A (en) * | 2009-04-24 | 2010-11-01 | Epistar Corp | Measurement apparatus for light-emitting diode |
| CN102735982A (en) * | 2011-03-29 | 2012-10-17 | 三星Led株式会社 | Inspection apparatus and method of light emitting device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104075879A (en) * | 2014-06-06 | 2014-10-01 | 致茂电子(苏州)有限公司 | Light emitting diode measurement device |
| CN105044583A (en) * | 2015-06-05 | 2015-11-11 | 江苏理工学院 | Test apparatus for LED junction temperature K coefficient |
| CN111289227A (en) * | 2020-03-20 | 2020-06-16 | 江西照世科技有限公司 | LED lamp string detector based on Internet of things |
| CN111289227B (en) * | 2020-03-20 | 2021-10-08 | 江西照世科技有限公司 | LED lamp string detector based on Internet of things |
| CN113324738A (en) * | 2021-06-02 | 2021-08-31 | 深圳市长方集团股份有限公司 | Flip LED chip testing arrangement |
| CN113324738B (en) * | 2021-06-02 | 2024-02-13 | 深圳市长方集团股份有限公司 | Flip LED chip testing device |
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Application publication date: 20140507 |