CN103786091A - Polishing apparatus and polishing method - Google Patents

Polishing apparatus and polishing method Download PDF

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Publication number
CN103786091A
CN103786091A CN201310513098.6A CN201310513098A CN103786091A CN 103786091 A CN103786091 A CN 103786091A CN 201310513098 A CN201310513098 A CN 201310513098A CN 103786091 A CN103786091 A CN 103786091A
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Prior art keywords
substrate
apical ring
cleaning
grinding
jet
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CN201310513098.6A
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Chinese (zh)
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CN103786091B (en
Inventor
宫崎充
小林贤一
本坊光朗
今村听
董博宇
筱崎弘行
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Ebara Corp
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Ebara Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A polishing apparatus includes a polishing table having a polishing surface; a top ring (31A) configured to hold a substrate with an outer circumferential edge of the substrate surrounded by a retainer ring and to press the substrate against said polishing surface, said top ring being movable between a polishing position above said polishing table, a position laterally of said polishing table, and a cleaning position; and a cleaning unit (100) disposed in said cleaning position and configured to eject a cleaning liquid toward a lower surface of said top ring (31A), which is being rotated, thereby cleaning the substrate (W) held by said top ring (31A) together with the lower surface of said top ring (31A). The polishing apparatus and a polishing method provided by the invention are capable of efficiently cleaning a substrate held on a lower surface of the top ring together with the lower surface of the top ring to stabilize a polishing capability, and to stabilize a cleaning capability of a cleaning module.

Description

Lapping device and Ginding process
Technical field
The present invention relates to a kind of lapping device and Ginding process, relate in particular to a kind of surface to substrates such as semiconductor wafers and grind the lapping device and the Ginding process that make its planarization.
Background technology
The lapping device that the surface of the substrates such as semiconductor wafer is ground, generally has load/unload portion, grind section and cleaning part.Grind section possesses grinding unit, and described grinding unit has: grinding table, and described grinding table has the abradant surface being made up of grinding block; And the apical ring that substrate is kept (grinding head), this grinding unit is by being pressed into authorized pressure the substrate being kept by apical ring the abradant surface of grinding block, make grinding table and apical ring relative motion simultaneously, thereby make substrate and abradant surface sliding-contact, the surface grinding of substrate is obtained to smooth and minute surface.For the grinding unit that carries out cmp (CMP), in the time of grinding base plate, lapping liquid (slurry) is supplied to abradant surface from lapping liquid supply nozzle.Therefore, in the base plate holder surface of the substrate surface after grinding and apical ring, remain the grinding residue thing (particulate) of lapping liquid and grinding slag etc.
In order to remove the grinding residue thing (particulate) remaining on substrate surface after grinding, general cleaning part has substrate surface is slightly cleaned to (once cleaning) and seminal plasma is washed multiple cleaning assemblies of (secondary cleaning), substrate after grinding is transferred manipulator etc. from the grinding unit of grind section and is transported to the cleaning assembly of cleaning part and is cleaned successively, and the substrate after cleaning is sent back to load/unload portion.
But, once the substrate surface from the grinding unit of grind section is transferred the grinding of cleaning assembly that manipulator etc. is transported to cleaning part is attached with a large amount of grinding residue things (particulate), so, even substrate surface is carried out to the thick cleaning assembly cleaning, also likely can be by particulate wounded substrate surface in cleaning, or particulate is again attached on substrate surface and cleaning performance is worsened.In addition, if during substrate is transported to grinding unit, rubbish etc. are attached on substrate surface, and the nonferromagnetic substance of grinding unit worsens.
Applicant has proposed a kind of burnishing device: thus to the apical ring jet cleaning liquid that is positioned at substrate transfer position, lower surface to apical ring etc. cleans (with reference to patent documentation 1).In addition, proposed a kind of flat grinding device (with reference to patent documentation 2) and grinding head cleaning device (with reference to patent documentation 3), thereby described flat grinding device promptly cleans to the workpiece after grinding by the workpiece jet cleaning liquid in the conveying after finishing to the grinding being kept by block; Described grinding head cleaning device is by with required angle, cleaning fluid is ejected into the lower surface portion of grinding head from washer jet, thereby the residual attachment being attached on retaining ring and the chip back surface contact site of grinding head rear side is cleaned to removal.
Patent documentation 1: Japanese patent laid-open 9-254017 communique
Patent documentation 2: the clear 62-224563 communique of Japanese Patent Laid-Open
Patent documentation 3: Japanese Patent Laid-Open 2008-272902 communique
Invent problem to be solved
In order not make surface attachment have the substrate of a large amount of grinding residue things to enter cleaning assembly, not make to carry the substrate that is attached with rubbish etc. in way to enter grinding unit, require the substrate being kept by apical ring to clean together with apical ring.Therefore, by cleaning fluid is ejected into the lower surface of the apical ring that is positioned at substrate transfer position from being arranged at the washer jet of substrate transfer position, thereby carry out the cleaning of the lower surface of substrate to being kept by apical ring and apical ring.
At this substrate transfer position, be useful on the mechanism that carries out substrate delivery/reception, the position that is suitable near of the substrate being kept by the apical ring that is positioned at substrate transfer position cleaning is generally difficult to configure washer jet.Therefore, can not, from optimum position jet cleaning liquid, cannot obtain sufficient cleaning performance at present.
In addition, not to be substrate to being kept by the lower surface of apical ring clean together with the lower surface of apical ring in the invention that patent documentation 1,3 is recorded, and the invention that patent documentation 2 is recorded is configured to, workpiece jet cleaning liquid in conveying after finishing to grinding, any consideration is not done in the cleaning of the block lower surface to holding workpiece.
Summary of the invention
The present invention makes in view of the above problems, its object is to provide a kind of lapping device and Ginding process, can be efficiently together with the lower surface of the substrate being kept by the lower surface of apical ring and this apical ring, clean, thereby make nonferromagnetic substance stabilisation, and the cleaning performance stabilisation of the cleaning assembly that uses of the base-plate cleaning that substrate is departed from carry out after apical ring.
For solving the means of problem
Lapping device of the present invention has grinding table, apical ring and cleaning part, and described grinding table has abradant surface; Described apical ring between the abrasion site above described grinding table, position, described grinding table side and cleaning positions mobile freely, and by retaining ring around the peripheral part of substrate and this substrate is remained on to the lower surface of apical ring, and press to described abradant surface; Thereby described cleaning part cleans together with the lower surface of the substrate being kept by this apical ring and apical ring to the lower surface jet cleaning liquid of described apical ring of the rotation that is arranged in described cleaning positions.
So, by cleaning fluid being ejected into from cleaning part to the lower surface of the apical ring of the rotation that is arranged in cleaning positions, thereby the obstruction ground that can not be subject to the existence of such as substrate delivery/reception mechanism etc. can be arranged on the cleaning part of jet cleaning liquid and be suitable for the position cleaned most, can be efficiently together with the lower surface of the substrate being kept by the lower surface of apical ring and this apical ring, clean.
In a preferred form of the present invention, position, described grinding table side is the substrate transfer position of described grinding table side, and described cleaning positions is between described abrasion site and described substrate transfer position.
Thus, the way that apical ring is moved to abrasion site from substrate transfer position, can together with the lower surface of the substrate being kept by this apical ring and apical ring, clean.
In the preferred form of the present invention, described cleaning part has the 1st washer jet that is provided with multiple jets, and described multiple jets are positioned at along the position of the peripheral part of the substrate being kept by described apical ring, and described apical ring is positioned at described cleaning positions.
Thus, cleaning fluid can be ejected into the peripheral part of the substrate being kept by apical ring and around the gap producing between the retaining ring of this peripheral part, can clean efficiently this gap from the jet of the 1st washer jet.
In the preferred form of the present invention, described cleaning part has the 2nd washer jet that is provided with multiple jets, so multiple jet is positioned at along the diametric position of the substrate being kept by described apical ring, described apical ring is positioned at described cleaning positions.
Thus, cleaning fluid can be ejected into from the jet of the 2nd washer jet the surface of the substrate being kept by apical ring, the efficiently whole surface of cleaning base plate.
In the preferred form of the present invention, the jet of described the 1st washer jet equally spaced configures in the position of the peripheral part along substrate, and the jet of described the 2nd washer jet equally spaced configures in the diametric position along substrate.
Thus, can clean more equably the substrate that kept by apical ring and the lower surface of apical ring.
In the preferred form of the present invention, described the 1st washer jet is formed as semicircle shape, and described the 2nd washer jet is formed as linearity.
Thus, contrast arranges space, can realize the miniaturization of the cleaning part with the 1st washer jet and the 2nd washer jet.
In the preferred form of the present invention, with described cleaning part to after cleaning together with the lower surface of the substrate being kept by described apical ring and apical ring, substrate is transported to substrate transfer position, make described substrate depart from apical ring at described substrate transfer position, described substrate is transported to another cleaning part different from described cleaning part, cleans the substrate after grinding by described another cleaning part.
Ginding process of the present invention, for by retaining ring around the peripheral part of substrate and the apical ring that this substrate is remained on to lower surface is moved to the way of abrasion site of grinding table top from position, grinding table side, or make apical ring move at least one party the way of position, grinding table side from the abrasion site of grinding table top, make the apical ring that maintains substrate be positioned at cleaning positions, thereby clean together with the lower surface of the substrate being kept by this apical ring and apical ring to the lower surface jet cleaning liquid of the apical ring in rotation.
In the preferred form of the present invention, position, described grinding table side is substrate transfer position.
In the preferred form of the present invention, at described cleaning positions to after cleaning together with the lower surface of the substrate being kept by described apical ring and apical ring, substrate is transported to substrate transfer position, make described substrate depart from apical ring at described substrate transfer position, described substrate is transported to another cleaning positions different from described cleaning positions, cleans the substrate after grinding at described another cleaning positions.
The effect of invention
Adopt the present invention, by the lower surface jet cleaning liquid of the apical ring the rotation from cleaning part to the cleaning positions between abrasion site and substrate transfer position, thereby can not be subject to the existence of substrate delivery/reception mechanism etc. obstruction the cleaning part of jet cleaning liquid is arranged on and is suitable for the position cleaned most, can be efficiently together with the lower surface of the substrate being kept by the lower surface of apical ring and this apical ring, clean.Especially, by multiple jets of the 1st washer jet are positioned at along the position of the peripheral part of the substrate being kept by apical ring, described apical ring is positioned at cleaning positions, thus the peripheral part to the substrate being kept by apical ring and cleaning around the gap producing between the retaining ring of this peripheral part efficiently.Thus, can make nonferromagnetic substance stabilisation, the cleaning performance stabilisation of the cleaning assembly that the base-plate cleaning that can make substrate depart to carry out after apical ring uses.
Accompanying drawing explanation
Fig. 1 is the integrally-built top view of lapping device that represents embodiments of the present invention.
Fig. 2 is the stereogram of modal representation the 1st grinding unit.
Fig. 3 is the cutaway view of the structure of modal representation apical ring.
Fig. 4 is the summary top view that represents the position relationship of grinding table, apical ring and auxiliary cleaning part in the 1st grinding unit.
Fig. 5 is the stereogram that represents auxiliary cleaning part.
Fig. 6 represents to the lower surface jet cleaning liquid of apical ring and summary cutaway view when being cleaned together with the lower surface of the substrate surface being kept by apical ring and apical ring.
Fig. 7 is the summary top view that represents another example of the position relationship of grinding table, apical ring and auxiliary cleaning part in the 1st grinding unit.
Fig. 8 is the top view that represents another auxiliary cleaning part.
Symbol description
Figure BDA0000402049040000041
Figure BDA0000402049040000051
Figure BDA0000402049040000061
The specific embodiment
Fig. 1 is the integrally-built top view of lapping device that represents embodiment of the present invention.As shown in Figure 1, this lapping device has the housing 1 of essentially rectangular, and housing 1 inside is divided into load/unload portion 2, grind section 3 and cleaning part 4 by dividing plate 1a, 1b.The independent assembling respectively of these load/unload portions 2, grind section 3 and cleaning part 4, independent exhaustion.In addition, lapping device has processing substrate is moved to the control part 5 of controlling.
Load/unload portion 2 has two above (being four in this example) front loading parts 20, in described front loading part 20, is placed with the substrate box that the substrates such as multiple semiconductor wafers are stored.These front loading parts 20 and housing 1 disposed adjacent, and arrange along the width (direction vertical with length direction) of lapping device.On front loading part 20, can carry opening box, SMIF (standard manufacture interface: Standard Manufacturing Interface) box or FOUP (front-open wafer box: Front Opening Unified Pod).Here, SMIF, FOUP be inside be accommodated with substrate box, by with dividing plate cover and can keep and the independently closed container of environment of space outerpace.
In load/unload portion 2, be laid with side by side walking mechanism 21 along front loading part 20, in this walking mechanism 21, be provided with two conveying mechanical arms (loader) 22 that can move along substrate box orientation.Conveying mechanical arm 22 can carry out access to the substrate box on loading part before being mounted in 20 by moving in walking mechanism 21.Each conveying mechanical arm 22 has upper and lower two hands, by using the hand of upside in the time that substrate after treatment is sent back to substrate box, when substrate before treatment being used in the time that substrate box takes out to the hand of downside, can use respectively upper and lower hand.In addition, the hand of the downside of conveying mechanical arm 22 is configured to, by making substrate overturn around its axle center rotation.
Load/unload portion 2 is owing to being the region that must guarantee clean state, and therefore, the inside of load/unload portion 2 is maintained at all the time than all high pressure of lapping device outside, grind section 3 and cleaning part 4.Grind section 3 is owing to adopting slurry to be used as lapping liquid, therefore be the dirtiest region.Therefore, the inside of grind section 3 forms negative pressure, and this pressure is maintained lowlyer than the internal pressure of cleaning part 4.In load/unload portion 2, be provided with filter fan unit (not shown); this filter fan unit has the clean air filters such as HEPA filter, ulpa filter or chemical filter, blows out all the time particulate or has the clean air poison vapor, toxic gas are removed from this filter fan unit.
Grind section 3 is the regions of substrate surface being ground to (planarization), has: the 1st grinding unit 3A, the 2nd grinding unit 3B, the 3rd grinding unit 3C and the 4th grinding unit 3D.These the 1st grinding unit 3A, the 2nd grinding unit 3B, the 3rd grinding unit 3C and the 4th grinding unit 3D arrange along the length direction of lapping device.
The 1st grinding unit 3A has: the grinding table 30A of grinding block 10 is installed, and described grinding block 10 has abradant surface; Apical ring 31A, this apical ring 31A is used for keeping substrate, and substrate is pressed into the grinding block 10 on grinding table 30A and grinds; Lapping liquid supply nozzle 32A, this lapping liquid supply nozzle 32A is for for example, being supplied to grinding block 10 by lapping liquid and opaquing fluid (pure water); Truer 33A, this truer 33A is for repairing the abradant surface of grinding block 10; And sprayer 34A, this sprayer 34A nebulizes the fluid-mixing of liquid (for example pure water) and gas (for example nitrogen) or liquid (for example pure water) to be ejected on abradant surface.
Equally, the 2nd grinding unit 3B has: the grinding table 30B that grinding block 10 is installed; Apical ring 31B; Lapping liquid supply nozzle 32B; Truer 33B; And sprayer 34B.The 3rd grinding unit 3C has: the grinding table 30C that grinding block 10 is installed; Apical ring 31C; Lapping liquid supply nozzle 32C; Truer 33C; And sprayer 34C.The 4th grinding unit 3D has: the grinding table 30D that grinding block 10 is installed; Apical ring 31D; Lapping liquid supply nozzle 32D; Truer 33D; And sprayer 34D.
Because the 1st grinding unit 3A, the 2nd grinding unit 3B, the 3rd grinding unit 3C and the 4th grinding unit 3D have identical structure mutually, therefore, below the 1st grinding unit 3A is described.
Fig. 2 is the stereogram of modal representation the 1st grinding unit 3A.Apical ring 31A is bearing on apical ring rotating shaft 36.Be pasted with grinding block 10 at the upper surface of grinding table 30A, the upper surface of this grinding block 10 forms the abradant surface that substrate W is ground.In addition, also can replace grinding block 10 with fixed-abrasive.Apical ring 31A and grinding table 30A are configured to as shown by arrows around its axle center rotation.Substrate W utilizes vacuum suction and remains on the lower surface of apical ring 31A.When grinding, lapping liquid is supplied to the abradant surface of grinding block 10 from lapping liquid supply nozzle 32A, utilizes apical ring 31A to be pressed on abradant surface and to grind as the substrate W that grinds object.
Fig. 3 is the cutaway view of modal representation apical ring 31A structure.Apical ring 31A is linked to the lower end of apical ring rotating shaft 36 by universal joint 37.Universal joint 37 is the ball-and-socket joints that allow apical ring 31A and apical ring rotating shaft 36 to fascinate mutually and the rotation of apical ring rotating shaft 36 is delivered to apical ring 31A.Apical ring 31A has discoid apical ring main body 38 roughly and is configured in the retaining ring 40 of apical ring main body 38 bottoms.Apical ring main body 38 is formed by metal or ceramic equal strength and the high material of rigidity.In addition, retaining ring 40 is formed by the high resin material of rigidity or pottery etc.
At the lower surface of apical ring main body 38, the round and elastic piece 42 with substrate W butt is installed.Between elastomer block 42 and apical ring main body 38, be provided with the P1 of four balancing gate pits (air bag), P2, P3, P4.The pressure fluid of forced air etc. feeds to the P1 of balancing gate pit, P2, P3, P4 by fluid road 51,52,53,54 respectively, or to the P1 of balancing gate pit, P2, P3, P4 vacuum attraction.The P1 of balancing gate pit of central authorities is circular, and other the P2 of balancing gate pit, P3, P4 are ring-types.The P1 of these balancing gate pits, P2, P3, P4 are arranged in together in the heart.
The internal pressure of the P1 of balancing gate pit, P2, P3, P4, can utilize pressure adjustment part and mutual independent variation, and thus, the pressing force that can be central portion, inner side pars intermedia, outside pars intermedia and circumference to four of a substrate W region is adjusted independently.
In order not make substrate W fly out from apical ring 31A, at the lower surface of apical ring 31A, keep substrate W by retaining ring 40 around the peripheral part of substrate W in grinding.Position at the P3 of balancing gate pit that forms elastomer block 42 is formed with opening, is formed vacuum and substrate W absorption is remained on apical ring 31A by the P3 of balancing gate pit.In addition, by nitrogen, dry air, compressed air etc. are supplied in to the P3 of this balancing gate pit, thereby substrate W departs from apical ring 31A.
Between retaining ring 40 and apical ring main body 38, dispose elastomer block 46, be formed with the P6 of balancing gate pit in the inside of this elastomer block 46.Retaining ring 40 can move up and down relatively with respect to apical ring main body 38.The P6 of balancing gate pit is communicated with fluid road 56, and the pressure fluids such as forced air are supplied to the P6 of balancing gate pit by fluid road 56.The internal pressure of the P6 of balancing gate pit can be adjusted by pressure adjustment part.Therefore, with the pressing force that acts on substrate W independently capable of regulating retaining ring 40 act on the pressing force of grinding block 10.
Both can carry out grinding base plate by any in the 1st grinding unit 3A, the 2nd grinding unit 3B, the 3rd grinding unit 3C and the 4th grinding unit 3D, or also can use multiple grinding units of selecting in advance from these grinding units 3A～3D to carry out continuously grinding substrate.For example, both can carry out grinding base plate by the order of the 1st grinding unit 3A → 2nd grinding unit 3B, or also can carry out grinding base plate W by the order of the 3rd grinding unit 3C → 4th grinding unit 3D.In addition, also can carry out grinding base plate by the order of the 1st grinding unit 3B → 3rd, grinding unit 3A → 2nd grinding unit 3C → 4th grinding unit 3D.No matter which kind of situation, by by all milling time levels of grinding unit 3A～3D, thereby can improve treating capacity.
Be adjacent to the 1st grinding unit 3A and the 2nd grinding unit 3B and dispose the 1st linear transmission device 6.The 1st linear transmission device 6 is mechanisms of conveying substrate between four transfer positions along the orientation of grinding unit 3A, 3B institute (being set as in order the 1st transfer position TP1, the 2nd transfer position TP2, the 3rd transfer position TP3, the 4th transfer position TP4 from load/unload portion side).
Be adjacent to the 3rd grinding unit 3C and the 4th grinding unit 3D and dispose the 2nd linear transmission device 7.The 2nd linear transmission device 7 is mechanisms of conveying substrate between three transfer positions along the orientation of grinding unit 3C, 3D institute (being set as in order the 5th transfer position TP5, the 6th transfer position TP6, the 7th transfer position TP7 from load/unload portion side).
Substrate is transported to grinding unit 3A, 3B by the 1st linear transmission device 6.The apical ring 31A of the 1st grinding unit 3A moves between the abrasion site above grinding table 30A and the 2nd transfer position TP2 of grinding table 30A side.Therefore, substrate carries out at the 2nd transfer position TP2 to the handing-over of apical ring 31A, and the 2nd transfer position TP2 is substrate transfer position T (with reference to Fig. 4).Equally, the apical ring 31B of the 2nd grinding unit 3B moves between the abrasion site above grinding table 30B and the 3rd transfer position TP3 of grinding table 30B side, and substrate carries out at the 3rd transfer position TP3 as substrate transfer position to the handing-over of apical ring 31B.The apical ring 31C of the 3rd grinding unit 3C moves between the abrasion site above grinding table 30C and the 6th transfer position TP6 of grinding table 30C side, and substrate carries out at the 6th transfer position TP6 as substrate transfer position to the handing-over of apical ring 31C.The apical ring 31D of the 4th grinding unit 3D moves between the abrasion site above grinding table 30D and the 7th transfer position TP7 of grinding table 30D side, and substrate carries out at the 7th transfer position TP7 as substrate transfer position to the handing-over of apical ring 31D.
Dispose at the 1st transfer position TP1 the lifter 11 that acceptance is used from the substrate of conveying mechanical arm 22.Substrate is handed off to the 1st linear transmission device 6 by this lifter 11 from conveying mechanical arm 22.Between lifter 11 and conveying mechanical arm 22, on dividing plate 1a, be provided with gate (not shown), in the time of conveying substrate, gate is opened, and substrate is handed off to lifter 11 from conveying mechanical arm 22.In addition, between the 1st linear transmission device the 6, the 2nd linear transmission device 7 and cleaning part 4, dispose the swing type conveyer 12 with turn over function.This swing type conveyer 12 has the hand that can move between the 4th transfer position TP4 and the 5th transfer position TP5, by swing type conveyer 12 by substrate from the 1st linear transmission device 6 joining to the 2nd linear transmission device 7.Substrate is transported to the 3rd grinding unit 3C and/or the 4th grinding unit 3D by the 2nd linear transmission device 7.In addition, the substrate after being ground by grind section 3, is transported to cleaning part 4 via swing type conveyer 12.
In the side of swing type conveyer 12, dispose the interim mounting table 180 of the substrate being arranged on framework.This interim mounting table 180 and the 1st linear transmission device 6 disposed adjacent, and between the 1st linear transmission device 6 and cleaning part 4.Be placed on the substrate on interim mounting table 180, the conveying mechanical arm of the cleaning part 4 being illustrated is as follows transported to cleaning part 4.
As previously mentioned, the apical ring 31A of the 1st grinding unit 3A is configured to, and between the 2nd transfer position TP2 as substrate transfer position of the abrasion site above grinding table 30A and grinding table 30A side, moves.The apical ring 31A of the 1st grinding unit 3A is also configured to, and stops at above-mentioned abrasion site and as the cleaning positions C between the 2nd transfer position TP2 of substrate transfer position, has auxiliary cleaning part 100 in the position configuration corresponding with cleaning positions C of this apical ring 31A.
Equally, the apical ring 31B of the 2nd grinding unit 3B is configured to, stop at the abrasion site above grinding table 30B and grinding table 30B side as the cleaning positions between the 3rd transfer position TP3 of substrate transfer position, have auxiliary cleaning part 100 in the position configuration corresponding with the cleaning positions of this apical ring 31B.The apical ring 31C of the 3rd grinding unit 3C is configured to, stop at the abrasion site above grinding table 30C and grinding table 30C side as the cleaning positions between the 6th transfer position TP6 of substrate transfer position, have auxiliary cleaning part 100 in the position configuration corresponding with the cleaning positions of this apical ring 31C.The apical ring 31D of the 4th grinding unit 3D is configured to, stop at the abrasion site above grinding table 30D and grinding table 30D side as the cleaning positions between the 7th transfer position TP7 of substrate transfer position, have auxiliary cleaning part 100 in the position configuration corresponding with the cleaning positions of this apical ring 31D.
Fig. 4 is the position relationship being illustrated in corresponding to the auxiliary cleaning part 100 of the position configuration of grinding table 30A, the apical ring 31A of the 1st grinding unit 3A and the cleaning positions of apical ring 31A, represents the abrasion site P of apical ring 31A and the approximate vertical view as the 2nd transfer position TP2 of substrate transfer position T simultaneously.In addition, at the position relationship of the auxiliary cleaning part 100 of the position configuration of the cleaning positions of the position relationship of the auxiliary cleaning part 100 of the position configuration of the cleaning positions of the grinding table 30B corresponding to the 2nd grinding unit 3B, apical ring 31B and apical ring 31B, grinding table 30C, apical ring 31C corresponding to the 3rd grinding unit 3C and apical ring 31C and also roughly the same at the position relationship of the auxiliary cleaning part 100 of the position configuration of the cleaning positions of the grinding table 30D corresponding to the 4th grinding unit 3D, apical ring 31D and apical ring 31D,, therefore omit their explanation.
As shown in Figure 4, apical ring 31A is configured to, above grinding table 30A by the abrasion site P shown in solid line, grinding table 30A side by between the 2nd transfer position TP2 as substrate transfer position T shown in double dot dash line and abrasion site P and substrate transfer position T by the cleaning positions C shown in double dot dash line between move, have auxiliary cleaning part 100 in the position configuration corresponding with apical ring 31A that is positioned at this cleaning positions C.
; auxiliary cleaning part 100 has: the 2nd washer jet 104 that the 1st washer jet 102 that semicircle shape extends and linearity extend; in the time that apical ring 31A is positioned at cleaning positions C, the 1st washer jet 102 is configured in the below of the substrate W being kept by apical ring 31A lower surface that is positioned at cleaning positions C along the substrate W peripheral part being kept by this apical ring 31A lower surface, the 2nd washer jet 104 along substrate W diametric(al).Thus, can not carried out the existence of the mechanism etc. of substrate delivery/reception obstruction auxiliary cleaning part 100 is configured in and is suitable for the position cleaned.
Fig. 5 is the stereogram that represents auxiliary cleaning part 100.Fig. 6 represents to the lower surface jet cleaning liquid of apical ring 31A and summary cutaway view when cleaning together with the lower surface of the substrate W surface (lower surface) being kept by apical ring 31A and apical ring 31A.
As shown in Figures 5 and 6, the 1st washer jet 102, uniformly-spaced configures multiple (in diagram the being seven) jet element 110 respectively with jet upward 108 at the upper surface of the support plate 106 of semi-annular shape along support plate 106 circumferencial directions and forms.This each jet element 110 is connected with cleaning solution supplying pipeline 112 respectively.The 2nd washer jet 104 cross sections are rectangles, and have the nozzle body 116 that extends into rectangular shape, and described nozzle body 116 inside have the wash liquid stream through hole 114 being communicated with cleaning solution supplying pipeline 12.At the upper surface of nozzle body 116, be uniformly-spaced provided with multiple (in diagram the being nine) jet 118 being communicated with wash liquid stream through hole 114 respectively along nozzle body 116 length directions.
In this embodiment, the cleaning fluid spraying as the jet 118 of the jet 108 from the 1st washer jet 102 and the 2nd injection nozzle 104, the liquid (for example pure water) that use work nebulizes and fluid-mixing or the liquid (for example pure water) of gas (for example nitrogen).And, spray from the jet 108 of the 1st washer jet 102 cleaning fluid that diffuses into fan-shaped along the circumferencial direction of the 1st washer jet 102, spray from the jet 118 of the 2nd washer jet 104 cleaning fluid that diffuses into fan-shaped along the length direction of the 2nd washer jet 104.
In addition, the upper surface of the upper surface of each jet element 110 of the 1st washer jet 102 and the nozzle body 116 of the 2nd washer jet 104 and come with the same plane of grinding table 30A upper surface on, apical ring 31A passes through above them.
The jet 108 of the 1st washer jet 102 as shown in Figure 6, is configured in along the position of the peripheral part of substrate W, and described substrate is kept by the apical ring 31A that is positioned at cleaning positions C.Thus, cleaning fluid is ejected into the peripheral part of the substrate W being kept by apical ring 31A and around the gap forming between the retaining ring 40 of this peripheral part from the jet 108 of the 1st washer jet 102, thereby can cleans efficiently this gap.
In addition, the jet 118 of the 2nd washer jet 104 is configured in the diametric position along substrate W, and described substrate is kept by the apical ring 31A that is positioned at cleaning positions C.Thus, cleaning fluid is ejected into the surface (lower surface) of the substrate W being kept by apical ring 31A from the jet 118 of the 2nd washer jet 104, thus the whole surface of cleaning base plate W efficiently.
Adopt this example, when the apical ring 31A that maintains substrate W when lower surface is positioned at cleaning positions C, make apical ring 31A rotation by one side, cleaning fluid is ejected into the i.e. top of lower surface of apical ring 31A on one side from the jet 108 of the 1st washer jet 102 and the jet 118 of the 2nd washer jet 104, thereby can use the cleaning fluid spraying from the jet 108 of the 1st washer jet 102 mainly to clean at the peripheral part of substrate W and around the gap to forming between the retaining ring 40 of peripheral part, can use the cleaning fluid spraying from the jet 118 of the 2nd washer jet 104 to come the surface (lower surface) of main cleaning base plate W.
This cleaning is that the substrate W that the apical ring 31A of the cleaning positions C by between abrasion site P and substrate transfer position T is kept carries out, thus, not hindered by the existence of substrate delivery/reception mechanism etc. and can be arranged on and be suitable for the position cleaned most having for the 1st washer jet 102 of this cleaning and the auxiliary cleaning part 100 of the 2nd washer jet 104, and can clean together with this apical ring 31A lower surface the substrate W being kept by apical ring 31A lower surface efficiently.
In this embodiment, cleaning positions C sets for, and in the time that apical ring 31A is positioned at cleaning positions C, apical ring 31A is positioned at mutual nonoverlapping position up and down with grinding table 30A, and auxiliary cleaning part 100 is configured to, and its 1st washer jet 102 is positioned at grinding table 30A side.
Fig. 7 is the summary top view that represents another example of the position relationship of grinding table 30A, apical ring 31A and auxiliary cleaning part 100 in the 1st grinding unit.As shown in Figure 7, cleaning positions C sets for, in the time that apical ring 31A is positioned at cleaning positions C, a part of apical ring 31A is positioned at the position overlapping each other up and down with a part of grinding table 30A, also auxiliary cleaning part 100 can be configured in and the position of grinding 30A and not interfering with one another, so that the 2nd washer jet 104 is positioned at grinding table 30A side.Thus, can further reduce the auxiliary shared area of cleaning part 100.Even in this embodiment, the upper surface of the upper surface of each jet element 110 of the 1st washer jet 102 and the nozzle body 116 of the 2nd washer jet 104 and come with the same plane of grinding table 30A upper surface on, apical ring 31A passes through above them.
In addition, for example, guaranteeing to have enough space is set in the situation that, as shown in Figure 8, the 2nd washer jet 104 that also can extend across linearity and the 1st washer jet 102 of two semi-annular shapes is configured as to annulus and forms auxiliary cleaning part 100.So, can be by using two the 1st washer jets to improve cleaning performance.
In this embodiment, cleaning part 4 as shown in Figure 1, is divided into the 1st purge chamber's the 190, the 1st conveying chamber the 191, the 2nd purge chamber's the 192, the 2nd conveying chamber 193 and hothouse 194.In the 1st purge chamber 190, dispose up and down two cleaning assemblies 201.Equally, in the 2nd purge chamber 192, dispose up and down two secondary cleaning assemblies 202.Cleaning assembly 201 and secondary cleaning assembly 202 are the cleaning machines that use cleaning fluid to clean substrate, can reduce to take up room by configuring up and down.In the 2nd purge chamber 192, be provided with substrate and place the substrate lay down location (not shown) of use temporarily.
In hothouse 194, dispose up and down two dry components 205.Dispose the 1st conveying mechanical arm 209 that can move up and down at the 1st conveying chamber 191, dispose the 2nd conveying mechanical arm 210 that can move up and down at the 2nd conveying chamber 193.The 1st conveying mechanical arm 209 has the hand of two sections.The hand of the 1st conveying mechanical arm 209 downsides is configured in the position that can carry out access to above-mentioned interim mounting table 180.In the time that the hand of the 1st conveying mechanical arm 209 downsides carries out access to interim mounting table 180, the gate (not shown) being located on dividing plate 1b is opened.
The 1st conveying mechanical arm 209 carries out such action: conveying substrate W between interim mounting table 180, cleaning assembly 201, substrate lay down location, secondary cleaning assembly 202.When the substrate before transport cleaning (being attached with the substrate of slurry), the 1st conveying mechanical arm 209 uses the hand of downside, in the time of substrate after transport cleaning, uses the hand of upside.The 2nd conveying mechanical arm 210 carries out such action: conveying substrate between secondary cleaning assembly 202, substrate lay down location, dry component 205.The 2nd conveying mechanical arm 210, due to the substrate after transport cleaning only, therefore only has a hand.Conveying mechanical arm 22 shown in Fig. 1 uses the hand of its upside that substrate is taken out from dry component 205, and this substrate is sent back to substrate box.In the time that the hand of conveying mechanical arm 22 upsides carries out access to dry component 205, the gate (not shown) being located on dividing plate 1a is opened.
In this embodiment, as cleaning assembly 201 and secondary cleaning assembly 202, use roll forming sponge type cleaning machine.In addition, although cleaning part 4 has two cleaning assemblies 201 and two secondary cleaning assemblies 202, also can there is three above cleaning assemblies and/or secondary cleaning assembly.
In addition, cleaning assembly 201 and the cleaning assembly of same type of secondary cleaning assembly 202, or also dissimilar cleaning assembly.For example, also a cleaning assembly 201 can be made and substrate upper and lower surface be rubbed and cleans the cleaning machine of type with a pair of roll forming sponge, secondary cleaning assembly 202 be made to the friction of pencil formula and clean the cleaning machine of (ペ Application シ Le ス Network ラ Block is cleaned) or two-fluid injection types.The cleaning machine of two-fluid injection types is to make a small amount of CO 2pure water (DIW) and nitrogen after gas (carbon dioxide) dissolves mixes, this fluid-mixing is sprayed to the cleaning machine of substrate surface.The cleaning machine of the type can be removed the micro particles on substrate by small drop and impact energy.Especially, by the flow of suitable adjustment nitrogen and the flow of pure water, thereby can realize undamaged base-plate cleaning.In addition the pure water that, is dissolved with carbon dioxide by use relaxes the corrosion impact to substrate that causes of static.
Then, in substrate box from being placed on loading part 20, take out a substrate, after substrate surface with the 1st grinding unit 3A of grind section 3 after to this taking-up grinds, clean and return it to cleaning part 4 in the substrate box being placed on front loading part 20, now this series of action is described.
First, conveying mechanical arm 22 takes out a substrate from being placed in the substrate box on loading part 20, after making substrate overturn become its surface downwards, by lifter 11 by substrate delivery/reception to the 1 linear transmission device 6.The substrate that is positioned at the 1st transfer position TP1 is transported to the 2nd transfer position TP2 (substrate transfer position) by the 1st linear transmission device 6.
The apical ring 31A of the 1st grinding unit 3A, accepts substrate W at the 2nd transfer position TP2 (substrate transfer position T) from the 1st linear transmission device 6, and moves to cleaning positions C.Thereby make the apical ring 31A rotation that is positioned at this cleaning positions C make substrate W rotation, as previously mentioned simultaneously, from the jet 108 of the 1st washer jet 102 and the jet 118 of the 2nd washer jet 104 to apical ring lower surface jet cleaning liquid, together with the lower surface of the surface (lower surface) of the substrate W being kept by apical ring 31A lower surface and apical ring 31A, clean.
Then, the apical ring 31A of the 1st grinding unit 3A moves to abrasion site P from cleaning positions C.Then, apical ring 31A declined and substrate W be pressed on the surface (abradant surface) of grinding block 10.Now, make respectively apical ring 31A and grinding table 30A rotation, from the lapping liquid supply nozzle 32A that is located at grinding table 30A top, lapping liquid is supplied to grinding block 10.So, thus the abradant surface sliding-contact of substrate W and grinding block 10 is ground the surface of substrate W.
After grinding finishes, the apical ring 31A of the 1st grinding unit 3A moves to cleaning positions C from abrasion site P, as hereinbefore, the lower surface jet cleaning liquid of apical ring 31A from the jet 108 of the 1st washer jet 102 and from the jet 118 of the 2nd washer jet 104 to rotation cleans together with the lower surface of the surface (lower surface) of the substrate W being kept by the lower surface of apical ring 31A and apical ring 31A.
In addition, in this embodiment, before and after substrate being ground with the 1st grinding unit 3A, together with the lower surface of the surface (lower surface) of the substrate W being kept by the lower surface of apical ring 31A and apical ring 31A, clean, thus, in the conveying to the 1st grinding unit 3A, cleaned being attached to rubbish on substrate W surface etc. etc. in advance, make the nonferromagnetic substance of grinding unit 3A stable, simultaneously, the substrate that can not make surface attachment grind in a large number residue thing enters cleaning assembly 201,202, makes the cleaning performance stabilisation of the cleaning assembly 201,202 using in cleaning part 4.Also an only side that can be before or after substrate being ground with the 1st grinding unit 3A, together with the lower surface of the surface (lower surface) of the substrate W being kept by the lower surface of apical ring 31A and apical ring 31A, clean, make side's stabilisation of the cleaning performance of the nonferromagnetic substance of grinding unit 3A or the cleaning assembly 201,202 that cleaning part 4 uses.
Then, the apical ring 31A of the 1st grinding unit 3A moves to the 2nd transfer position TP2 (substrate transfer position T) from cleaning positions C, herein by substrate delivery/reception to the 1 linear transmission device 6 after grinding.The 1st linear transmission device 6 is transported to the 4th transfer position TP4 by the substrate after grinding via the 3rd transfer position TP3.
Swing type conveyer 12 accepts to be positioned at the substrate of the 4th transfer position TP4 from the 1st linear transmission device 6, after making substrate overturn become its surface upwards, its conveying is placed on interim mounting table 180.
The 1st conveying mechanical arm 209 keeps being placed on the substrate on interim mounting table 180, and is transported to the substrate lay down location in the 2nd conveying chamber 191, then, is transported to a cleaning assembly 201 or is delivered directly to cleaning assembly 201 one time.The 1st conveying mechanical arm 209 is accepted once to clean the substrate (slightly cleaning) by a cleaning assembly 201 from a cleaning assembly 201, is transported to secondary cleaning assembly 202.
The 2nd conveying mechanical arm 210 is accepted to carry out the substrate secondary cleaning (seminal plasma is washed) by secondary cleaning assembly 202 from secondary cleaning assembly 201, is transported to dry component 205.Then, conveying mechanical arm 22 is accepted, by the dried substrate of dry component 205, to be sent back in the substrate box being placed on front loading part 20 from dry component 205.
In above-mentioned example, although cleaning positions C is set between the abrasion site P above grinding table 30A and the substrate transfer position T of grinding table 30A side, there is auxiliary cleaning part 100 in the position configuration corresponding with this cleaning positions C, but in the side of grinding table 31A and be different from the place of substrate transfer position T, also can setting example another grinding table (not shown) as abradant in polishing, between the abrasion site above the abrasion site P above grinding table 30A and not shown another grinding table, cleaning positions is set, and at the auxiliary cleaning part 100 of the position configuration corresponding with this cleaning positions.
Adopt lapping device of the present invention, by the apical ring 31A lower surface jet cleaning liquid of the 1st grinding unit 3A in the rotation of the cleaning positions C between abrasion site P and substrate transfer position T, thereby the obstruction and the auxiliary cleaning part 100 of jet cleaning liquid can being arranged on that can not be subject to the existence of substrate delivery/reception mechanism etc. is suitable for the position of cleaning most, and can clean together efficiently the substrate W and this apical ring 31A lower surface that are kept by the lower surface of apical ring 31A.Especially, by multiple jets 108 of the 1st washer jet 102 are positioned at along the position of the peripheral part of the substrate W that kept by the apical ring 31A that is positioned at cleaning positions C, thus the peripheral part to the substrate W being kept by apical ring 31A and cleaning around the gap forming between the retaining ring 40 of this peripheral part efficiently.Thus, can make the cleaning performance stabilisation of the nonferromagnetic substance of the 1st grinding unit 3A and the cleaning assembly 201,202 that cleaning part 4 uses.
Although preferred embodiments of the present invention has so far been described, the present invention is not limited to above-mentioned embodiment, self-evident, also can in the scope of its technical conceive, implement by various mode.

Claims (10)

1. a lapping device, is characterized in that, has:
Grinding table, described grinding table has abradant surface;
Apical ring, described apical ring between the abrasion site above described grinding table, position, described grinding table side and cleaning positions mobile freely, and by retaining ring around the peripheral part of substrate and this substrate is remained on to the lower surface of apical ring, and press to described abradant surface; And
Cleaning part, described cleaning part is to the lower surface jet cleaning liquid of described apical ring of rotation that is arranged in described cleaning positions, thereby cleans together with the lower surface of the substrate being kept by this apical ring and apical ring.
2. lapping device as claimed in claim 1, is characterized in that, position, described grinding table side is the substrate transfer position of described grinding table side, and described cleaning positions is between described abrasion site and described substrate transfer position.
3. lapping device as claimed in claim 1, it is characterized in that, described cleaning part has the 1st washer jet that is provided with multiple jets, and described multiple jets are positioned at along the position of the peripheral part of the substrate being kept by described apical ring, and described apical ring is positioned at described cleaning positions.
4. lapping device as claimed in claim 3, it is characterized in that, described cleaning part has the 2nd washer jet that is provided with multiple jets, so multiple jet is positioned at along the diametric position of the substrate being kept by described apical ring, described apical ring is positioned at described cleaning positions.
5. lapping device as claimed in claim 4, is characterized in that, the jet of described the 1st washer jet equally spaced configures in the position of the peripheral part along substrate, and the jet of described the 2nd washer jet equally spaced configures in the diametric position along substrate.
6. lapping device as claimed in claim 4, is characterized in that, described the 1st washer jet is formed as semicircle shape, and described the 2nd washer jet is formed as linearity.
7. lapping device as claimed in claim 1, is characterized in that, with described cleaning part to after cleaning together with the lower surface of the substrate being kept by described apical ring and apical ring, substrate is transported to substrate transfer position,
Make described substrate depart from apical ring at described substrate transfer position, described substrate is transported to another cleaning part different from described cleaning part, clean the substrate after grinding by described another cleaning part.
8. a Ginding process, it is characterized in that, the way that makes to be moved to from position, grinding table side around the peripheral part of substrate the apical ring that this substrate remained on to lower surface by retaining ring the abrasion site above grinding table or make the abrasion site of apical ring above grinding table move at least one party the way of position, grinding table side, make the apical ring that maintains substrate be positioned at cleaning positions, to the lower surface jet cleaning liquid of apical ring in rotation, thereby clean together with the lower surface of the substrate being kept by this apical ring and apical ring.
9. Ginding process as claimed in claim 8, is characterized in that, position, described grinding table side is substrate transfer position.
10. Ginding process as claimed in claim 8, is characterized in that, to after cleaning together with the lower surface of the substrate being kept by described apical ring and apical ring, substrate is transported to substrate transfer position at described cleaning positions,
Make described substrate depart from apical ring at described substrate transfer position, described substrate is transported to another cleaning positions different from described cleaning positions, clean the substrate after grinding at described another cleaning positions.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104057397A (en) * 2014-06-24 2014-09-24 无锡市崇安区科技创业服务中心 Grinding water shortage prevention device
CN106514482A (en) * 2016-11-09 2017-03-22 上海华力微电子有限公司 Cleaning device and cleaning method for wafer chemical mechanical polishing retaining ring
CN107148665A (en) * 2014-10-31 2017-09-08 株式会社荏原制作所 Base plate cleaning device and substrate-cleaning method
CN107799436A (en) * 2016-08-29 2018-03-13 株式会社荏原制作所 Substrate board treatment and substrate processing method using same
CN110517951A (en) * 2019-08-29 2019-11-29 上海华力集成电路制造有限公司 A kind of cleaning method improving wafer micro-scrape before STI is ground

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6234325B2 (en) * 2014-05-23 2017-11-22 株式会社荏原製作所 Pressure calibration jig and substrate processing apparatus
CN105437053A (en) * 2014-06-18 2016-03-30 上海和辉光电有限公司 Panel grinder
US9539699B2 (en) * 2014-08-28 2017-01-10 Ebara Corporation Polishing method
JP6587379B2 (en) * 2014-09-01 2019-10-09 株式会社荏原製作所 Polishing equipment
JP6468037B2 (en) * 2015-04-06 2019-02-13 信越半導体株式会社 Polishing equipment
US10898987B2 (en) * 2015-06-01 2021-01-26 Ebara Corporation Table for holding workpiece and processing apparatus with the table
US11292101B2 (en) * 2017-11-22 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing apparatus and method
LT6564B (en) 2017-12-19 2018-11-12 Vilniaus Gedimino technikos universitetas Flat surface polishing device
CN108098564B (en) * 2017-12-20 2019-10-01 何银亚 A kind of semiconductor crystal wafer chemical-mechanical polisher

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6402598B1 (en) * 1999-06-16 2002-06-11 Samsung Electronics Co., Ltd. Chemical mechanical polishing apparatus and method of washing contaminants off of the polishing head thereof
JP2003289058A (en) * 2002-03-28 2003-10-10 Sumitomo Electric Ind Ltd Method for polishing compound semiconductor wafer and apparatus for polishing the same
US20050048880A1 (en) * 1995-10-27 2005-03-03 Applied Materials, Inc., A Delaware Corporation Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion
CN101599423A (en) * 2008-06-04 2009-12-09 株式会社荏原制作所 Substrate board treatment and method, substrate grasping mechanism and substrate grasping method
US7632378B2 (en) * 1999-03-05 2009-12-15 Ebara Corporation Polishing apparatus

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0798302B2 (en) 1986-03-25 1995-10-25 スピ−ドフアム株式会社 Flat polishing machine
JP3550180B2 (en) * 1994-04-28 2004-08-04 同和鉱業株式会社 Wafer transfer method and transfer apparatus
KR0132274B1 (en) * 1994-05-16 1998-04-11 김광호 Polishing apparatus of semiconductor wafer
JP3109558B2 (en) * 1994-11-24 2000-11-20 住友金属工業株式会社 Wafer holder
US5738574A (en) * 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US6050884A (en) 1996-02-28 2000-04-18 Ebara Corporation Polishing apparatus
JP3475004B2 (en) 1996-03-19 2003-12-08 株式会社荏原製作所 Polishing equipment
US6293855B1 (en) * 1998-03-09 2001-09-25 Ebara Corporation Polishing apparatus
KR100469133B1 (en) * 1999-06-24 2005-01-29 스미도모쥬기가이고교 가부시키가이샤 Method and device for washing by fluid spraying
US6287178B1 (en) * 1999-07-20 2001-09-11 International Business Machines Corporation Wafer carrier rinsing mechanism
US6659116B1 (en) 2000-06-26 2003-12-09 Lam Research Corporation System for wafer carrier in-process clean and rinse
JP2006100607A (en) * 2004-09-30 2006-04-13 Matsushita Electric Ind Co Ltd Polishing head, chemomechanical polishing device, and washing method for polishing head
JP2007103703A (en) * 2005-10-05 2007-04-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Polishing method of semiconductor wafer
JP2008272902A (en) 2007-05-01 2008-11-13 Tokyo Seimitsu Co Ltd Apparatus and method for cleaning grinding head in cmp apparatus
JP5744382B2 (en) * 2008-07-24 2015-07-08 株式会社荏原製作所 Substrate processing apparatus and substrate processing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050048880A1 (en) * 1995-10-27 2005-03-03 Applied Materials, Inc., A Delaware Corporation Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion
US7632378B2 (en) * 1999-03-05 2009-12-15 Ebara Corporation Polishing apparatus
US6402598B1 (en) * 1999-06-16 2002-06-11 Samsung Electronics Co., Ltd. Chemical mechanical polishing apparatus and method of washing contaminants off of the polishing head thereof
JP2003289058A (en) * 2002-03-28 2003-10-10 Sumitomo Electric Ind Ltd Method for polishing compound semiconductor wafer and apparatus for polishing the same
CN101599423A (en) * 2008-06-04 2009-12-09 株式会社荏原制作所 Substrate board treatment and method, substrate grasping mechanism and substrate grasping method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104057397A (en) * 2014-06-24 2014-09-24 无锡市崇安区科技创业服务中心 Grinding water shortage prevention device
CN107148665A (en) * 2014-10-31 2017-09-08 株式会社荏原制作所 Base plate cleaning device and substrate-cleaning method
CN107148665B (en) * 2014-10-31 2018-04-20 株式会社荏原制作所 Base plate cleaning device and substrate-cleaning method
US10163664B2 (en) 2014-10-31 2018-12-25 Ebara Corporation Substrate cleaning apparatus and substrate cleaning method
CN107799436A (en) * 2016-08-29 2018-03-13 株式会社荏原制作所 Substrate board treatment and substrate processing method using same
CN107799436B (en) * 2016-08-29 2023-07-07 株式会社荏原制作所 Substrate processing apparatus and substrate processing method
CN106514482A (en) * 2016-11-09 2017-03-22 上海华力微电子有限公司 Cleaning device and cleaning method for wafer chemical mechanical polishing retaining ring
CN106514482B (en) * 2016-11-09 2019-08-23 上海华力微电子有限公司 A kind of cleaning device and cleaning method of wafer chemical mechanical polishing retaining ring
CN110517951A (en) * 2019-08-29 2019-11-29 上海华力集成电路制造有限公司 A kind of cleaning method improving wafer micro-scrape before STI is ground

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US20140120725A1 (en) 2014-05-01
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KR20140053772A (en) 2014-05-08
US9362129B2 (en) 2016-06-07

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