CN103839957A - Coms image sensor and manufacturing method thereof - Google Patents
Coms image sensor and manufacturing method thereof Download PDFInfo
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- CN103839957A CN103839957A CN201410098283.8A CN201410098283A CN103839957A CN 103839957 A CN103839957 A CN 103839957A CN 201410098283 A CN201410098283 A CN 201410098283A CN 103839957 A CN103839957 A CN 103839957A
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Abstract
The invention provides a COMS image sensor and a manufacturing method thereof. The manufacturing method comprises the steps that a semiconductor substrate is provided, and a grid electrode oxidation layer and grid electrode polycrystalline silicon are formed on the semiconductor substrate in sequence; medium layers are deposited on the semiconductor substrate, by exposure and etching, a grid electrode side wall is formed, and other medium layers on the semiconductor substrate are removed; a protecting layer is deposited on the semiconductor substrate; and ion implantation is carried out, and a first doping zone is formed on the surface of the semiconductor substrate. After the protecting layer is deposited, ion implantation is carried out on the surface of the semiconductor substrate to form the first doping zone, the first doping zone and a third doping zone form a light sensing diode, damage on the surface of the semiconductor substrate on the surface of the light sensing diode by ion implantation is avoided, so that COMS image sensor white dots caused by semiconductor damage are avoided, and the quality of the COMS image sensor is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of COMS imageing sensor and preparation method thereof.
Background technology
Imageing sensor is the important component part of composition digital camera.According to the difference of element, can be divided into CCD(Charge Coupled Device, charge coupled cell) and CMOS(Complementary Metal-Oxide Semiconductor, metal oxide semiconductor device) two large classes.Along with the particularly development of cmos image sensor design and manufacture technique of CMOS integrated circuit fabrication process, cmos image sensor has replaced ccd image sensor gradually becomes main flow.Cmos image sensor is compared and is had the advantages such as industrial integrated level is higher, power is lower.
In cmos image sensor, adopt transfer tube (transfer transistor, TX) to carry out the light induced electron in transmission light electric diode.
Fig. 1 shows the structural representation of cmos image sensor in prior art.
As shown in Figure 1, in prior art, the structure of cmos image sensor comprises: Semiconductor substrate 1, light sensitive diode district 2, light sensitive diode surface P type doped layer 5(are for reducing dark current), floating diffusion region 7(comprises well region doping 7a and the source region 7b that adulterates), grid polycrystalline silicon 3, grid oxic horizon 4, grid curb wall 6.Wherein, light sensitive diode district 2, light sensitive diode surface P type doped layer 5 and floating diffusion region 7 in Semiconductor substrate 1, have been arranged; Light sensitive diode district surface P type doped layer 5 and floating diffusion region 7 are positioned at the surf zone of Semiconductor substrate; Light sensitive diode district 2 is positioned at P type doped layer 5 belows, surface, light sensitive diode district.Grid polycrystalline silicon 3, gate dielectric layer 4, grid curb wall 6 form the grid structure that is positioned at Semiconductor substrate top.
In prior art, the method for making cmos image sensor comprises: the source region doping 7b that forms floating diffusion region 7 at the surf zone of Semiconductor substrate 1; In Semiconductor substrate 1, form successively subsequently grid oxic horizon 4 and grid polycrystalline silicon 3; Utilize photoresist and the grid 3 of patterning to carry out Implantation for the first time, in the inner light sensitive diode district 2 that forms of Semiconductor substrate 1; Then in described Semiconductor substrate 1, deposit one deck dielectric layer and form grid curb wall 6 by exposure and etching, be included in the photoresist layer that described dielectric layer surface forms patterning, as mask, described dielectric layer is carried out to etching formation, remove the photoresist layer of described patterning, and remove dielectric layer; Then utilize photoresist and the grid 3 of patterning to carry out Implantation for the second time, in described source region doping 7b, form well region doping 7a; The last Implantation for the third time that carries out again forms surface, light sensitive diode district P type doped layer 5 at the surf zone of Semiconductor substrate 1.
In the manufacture method of the cmos image sensor of prior art, because damage is caused on double conductive substrate surface of implantation membership, thereby cause cmos image sensor to occur white point.
Summary of the invention
The invention provides a kind of COMS imageing sensor and preparation method thereof, cause COMS imageing sensor to occur the problem of white point to solve semiconductor substrate surface damage in prior art.
The manufacture method of COMS imageing sensor provided by the invention, comprising:
Semi-conductive substrate is provided, in described Semiconductor substrate, is formed with successively grid oxic horizon and grid polycrystalline silicon;
Metallization medium layer in described Semiconductor substrate, by exposure and etching, forms grid curb wall, and removes all the other dielectric layers in described Semiconductor substrate;
In described Semiconductor substrate, deposit protective layer;
Carry out Implantation and form the first doped region at described semiconductor substrate surface.
Further, described dielectric layer comprises the first silicon oxide layer, silicon nitride layer and the second silicon oxide layer.
Further, the formation step of grid curb wall comprises: form photoresist layer on described dielectric layer surface; Described photoresist layer is exposed and forms the photoresist layer of patterning with development; Taking the photoresist layer of patterning as mask, described dielectric layer is carried out to etching, then remove the photoresist layer of described patterning.
Further, described protective layer is suicide block film.
Further, the thickness of described protective layer is
Further, form grid oxic horizon and grid polycrystalline silicon in Semiconductor substrate before, also comprise: carry out Implantation and form the second doped region at described semiconductor substrate surface, described the second doped region is positioned at grid polycrystalline silicon one side.
Further, also comprise: carry out Implantation in inner the 3rd doped region that forms of described Semiconductor substrate, described the 3rd doped region is positioned at the opposite side of described grid polycrystalline silicon, contrary with the doping type of described the second doped region.
Further, described the first doped region is positioned at the top of described the 3rd doped region, contrary with the doping type of described the 3rd doped region, and described the first doped region and the 3rd doped region form light sensitive diode.
Further, after forming the first doped region, also comprise, Implantation is carried out in the second doped region, form the 4th doped region in described the second doped region, described the 4th doped region is contrary with the doping type of described the second doped region, forms floating diffusion region.
Accordingly, the present invention also proposes a kind of COMS imageing sensor that uses the manufacture method of above COMS imageing sensor to make, and comprising:
Semiconductor substrate;
Be arranged in floating diffusion region, transmission transistor, the light sensitive diode of described Semiconductor substrate;
Described floating diffusion region comprises described the second doped region and described the 4th doped region, and described the second doped region is contrary with the doping type of described the 4th doped region, and described the 4th doped region is arranged in described the second doped region;
Described light sensitive diode comprises the first doped region and the 3rd doped region, and described the first doped region is contrary with the doping type of described the 3rd doped region, and described the first doped region is positioned at described the 3rd top, doped region; Described the first doped region is contrary with the doping type of the 3rd doped region;
Described transmission transistor comprises: be positioned at grid oxic horizon and grid polycrystalline silicon in described Semiconductor substrate, be positioned at described grid polycrystalline silicon side wall around; Described the first doped region and the second doped region are positioned at the both sides of grid polycrystalline silicon.
Inventor finds after side wall etching is removed dielectric layer, the follow-up implantation membership of carrying out light sensitive diode surface doping layer causes damage to the Semiconductor substrate on light sensitive diode surface, and white point is very responsive for light sensitive diode surface quality and integrality, the damage of Semiconductor substrate can cause cmos image sensor to occur white point.
Compared with prior art, the present invention has the following advantages:
1, the present invention forms the first doped region by carry out Implantation after deposition protective layer at semiconductor substrate surface again, the first doped region and the 3rd doped region form light sensitive diode, prevent that Implantation from causing damage to the semiconductor substrate surface on light sensitive diode surface, thereby avoid because semiconductor damages the COMS imageing sensor white point causing, improve the quality of COMS imageing sensor;
2, the present invention does not increase new processing step in the manufacturing process of COMS imageing sensor, under the condition that does not increase cost, can overcome and damage the white point causing because of semiconductor surface, and method is simple, convenient operation, can not impact the performance of COMS imageing sensor.
Brief description of the drawings
Fig. 1 is the structural representation of cmos image sensor in prior art.
The manufacture method schematic flow sheet of the COMS imageing sensor that Fig. 2 provides for one embodiment of the invention.
The each step structural representation of manufacture method of the COMS imageing sensor that Fig. 3～9 provide for one embodiment of the invention.
Embodiment
From background technology, the cmos image sensor that prior art forms causes damage because of Implantation to semiconductor substrate surface, thereby causes occurring white point.Inventor studies discovery for the problems referred to above, after side wall etching is removed dielectric layer, the follow-up implantation membership of carrying out light sensitive diode surface doping layer causes damage to the Semiconductor substrate on light sensitive diode surface, and white point is very responsive for light sensitive diode surface quality and integrality, the damage of Semiconductor substrate can cause cmos image sensor to occur white point.
After further research, inventor has proposed a kind of cmos image sensor and preparation method thereof.
Cmos image sensor the present invention being proposed below in conjunction with the drawings and specific embodiments and preparation method thereof is described in further details.According to the following describes and claims, advantages and features of the invention will be clearer, it should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only for convenient, the object of the aid illustration embodiment of the present invention lucidly.
The manufacture method schematic flow sheet of the cmos image sensor that Fig. 2 provides for one embodiment of the invention, as shown in Figure 2, a kind of cmos image sensor that the present invention proposes and preparation method thereof, comprises the following steps:
Step 01: semi-conductive substrate is provided, is formed with successively grid oxic horizon and grid polycrystalline silicon in described Semiconductor substrate;
Step 02: metallization medium layer in described Semiconductor substrate, by exposure and etching, forms grid curb wall, and remove all the other dielectric layers in described Semiconductor substrate;
Step 03: deposit protective layer in described Semiconductor substrate;
Step 04: carry out Implantation and form the first doped region at described semiconductor substrate surface.
The each step structural representation of manufacture method of the COMS imageing sensor that Fig. 3～9 provide for one embodiment of the invention, please refer to shown in Fig. 2, and in conjunction with Fig. 3～Fig. 9, describes the manufacture method of the groove power device that the present invention proposes in detail:
Step 01: semi-conductive substrate 1 is provided, is formed with successively grid oxic horizon 4 and grid polycrystalline silicon 3 in described Semiconductor substrate 1.In the present embodiment, described Semiconductor substrate can be monocrystalline silicon, monocrystalline germanium or monocrystalline germanium silicon, or other Semiconductor substrate known to those skilled in the art.Below introduce in detail the main technique of this step:
First, carry out Implantation and form the second doped region 2 on described Semiconductor substrate 1 surface, as shown in Figure 3.
Described Semiconductor substrate 1 is carried out to the method that Implantation forms the second doped region 2 to be comprised: in described Semiconductor substrate 1, form the first patterned photoresist layer (not shown), define the position of the second doped region 2; Taking described the first patterned photoresist layer as mask, described Semiconductor substrate 1 is carried out to Implantation and form the second doped region 2; Remove the photoresist layer of the first image conversion.In the specific embodiment of the invention, the second doped region 2 is p-type doped region, and the ion injecting in ion implantation technology is p-type ion, for example boron (B), but be not limited to boron.The second doped region 2 is positioned at the region at place, floating diffusion region.
Secondly, form successively grid oxic horizon 4 and grid polycrystalline silicon 3 in described Semiconductor substrate 1, form transmission transistor, described the second doped region 2 is positioned at grid polycrystalline silicon 3 one sides, as shown in Figure 4.
In Semiconductor substrate 1, form successively oxide layer and polysilicon layer, then successively oxide layer and polysilicon layer are graphically formed to grid polycrystalline silicon 3 and grid oxic horizon 4.Grid material can be also metal, and the material of grid oxic horizon 4 is silica etc. well known to a person skilled in the art technology.
Finally, carry out Implantation in inner the 3rd doped region 5 that forms of described Semiconductor substrate 1, described the 3rd doped region 5 is positioned at the opposite side of described grid polycrystalline silicon 3, contrary with the doping type of the second doped region 2, as shown in Figure 5.
In the present embodiment, concrete, described Semiconductor substrate 1 is carried out to Implantation, in described Semiconductor substrate 1, the method that described the second doped region 2 opposite side relative with described grid polycrystalline silicon 3 forms the 3rd doped region 5 comprises: in described Semiconductor substrate 1, on the surface that grid polycrystalline silicon 3 and grid oxic horizon 4 form, form the photoresist layer (not shown) of second graphical, define the position of the second doped region, taking the photoresist layer of described second graphical as mask, described Semiconductor substrate is carried out to Implantation for the second time, in described Semiconductor substrate 1, described the first doped region 2 opposite side relative with described grid polycrystalline silicon 3 forms the 3rd doped region 5, remove the photoresist layer of described second graphical.In the specific embodiment of the invention, the 3rd doped region 5 is N-shaped doped region.
Step 02: deposit one deck dielectric layer in described Semiconductor substrate 1, by exposure and etching, form grid curb wall 6, and remove all the other dielectric layers in described Semiconductor substrate 1, as shown in Figure 6.
In the present embodiment, described dielectric layer comprises the first silicon oxide layer, silicon nitride layer and the second silicon oxide layer, in other embodiment of the present invention, can be other the combination such as silicon oxide layer, silicon nitride layer.The formation step of described side wall 6 comprises: form photoresist layer (not shown) on described dielectric layer surface; Described photoresist layer is exposed and forms the photoresist layer of patterning with development; Taking the photoresist layer of patterning as mask, described dielectric layer is carried out to etching and form side wall 6, then remove the photoresist layer of described patterning.In the present embodiment, remove all dielectric layers except grid curb wall 6 in described Semiconductor substrate 1.
Step 03: deposit protective layer 7 in described Semiconductor substrate 1, form figure as described in Figure 7.
In the present embodiment, described protective layer 7 is suicide block film, and thickness is
for example
preferably thickness is
Step 04: carry out Implantation and form the first doped region 8 on described Semiconductor substrate 1 surface, as shown in Figure 8
The formation method of described the first doped region 8 is similar to the formation method of above-mentioned the 3rd doped region 5.Described the first doped region 8 is p-type doping, and the ion injecting in ion implantation technology is boron (B) ion, can be also other known p-type ions.Described the first doped region 8 and the 3rd doped region 5 form light sensitive diode.
When Implantation, in Semiconductor substrate 1, have
the protective layer 7 of thickness, can not cause damage to semi-conductive surface, thereby can not affect the surface of light sensitive diode.
Then, Implantation is carried out in described the second doped region 2, in described the second doped region 2, form the 4th doped region 9, described the 4th doped region 9 is contrary with the doping type of described the second doped region 2.The first doped region 2 and described the 4th doped region 9 form floating diffusion region, form figure as shown in Figure 9.
In the specific embodiment of the invention, the 4th doped region 9 is identical with the doping type of the 3rd doped region 5, is all N-shaped doped region; The first doped region 8 is identical with the doping type of the second doped region 2, is all p-type doping.The processing steps such as the follow-up etching that also comprises protective layer 7, finally form COMS imageing sensor.
Accordingly, the COMS imageing sensor forming by the manufacture method of above-mentioned COMS imageing sensor, with reference to figure 9, comprising:
Be arranged in floating diffusion region, transmission transistor, the light sensitive diode of described Semiconductor substrate;
Described floating diffusion region comprises described the second doped region 2 and described the 4th doped region 9, and described the second doped region 2 is contrary with the doping type of described the 4th doped region 9, and described the 4th doped region 9 is arranged in described the second doped region 2;
Described light sensitive diode comprises the 3rd doped region 5 and the first doped region 8, and described the 3rd doped region 5 is contrary with the doping type of described the first doped region 8, and described the first doped region 8 is positioned at the top of described the 3rd doped region 5; Described the 3rd doped region 5 is contrary with the doping type of the first doped region 8;
Described transmission transistor comprises: be positioned at grid oxic horizon 4 and grid polycrystalline silicon 3 in described Semiconductor substrate, be positioned at described grid polycrystalline silicon 3 side wall 6 around; Described the first doped region 8 and the second doped region 2 are positioned at the both sides of grid polycrystalline silicon.
In sum, the present invention forms the first doped region by carry out Implantation after deposition protective layer at semiconductor substrate surface again, the first doped region and the 3rd doped region form light sensitive diode, prevent that Implantation from causing damage to the semiconductor substrate surface on light sensitive diode surface, thereby avoid because semiconductor damages the COMS imageing sensor white point causing, improve the quality of COMS imageing sensor; The present invention does not increase new processing step in the manufacturing process of COMS imageing sensor, under the condition that does not increase cost, can overcome and damage the white point causing because of semiconductor surface, and method is simple, convenient operation, can not impact the performance of COMS imageing sensor.
Foregoing description is only the description to preferred embodiment of the present invention, the not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, all belong to the protection range of claims.
Claims (10)
1. a manufacture method for COMS imageing sensor, is characterized in that, comprising:
Semi-conductive substrate is provided, in described Semiconductor substrate, is formed with successively grid oxic horizon and grid polycrystalline silicon;
Metallization medium layer in described Semiconductor substrate, by exposure and etching, forms grid curb wall, and removes all the other dielectric layers in described Semiconductor substrate;
In described Semiconductor substrate, deposit protective layer;
Carry out Implantation and form the first doped region at described semiconductor substrate surface.
2. the manufacture method of COMS imageing sensor as claimed in claim 1, is characterized in that, described dielectric layer comprises the first silicon oxide layer, silicon nitride layer and the second silicon oxide layer.
3. the manufacture method of COMS imageing sensor as claimed in claim 2, is characterized in that, the formation step of grid curb wall comprises: form photoresist layer on described dielectric layer surface; Described photoresist layer is exposed and forms the photoresist layer of patterning with development; Taking the photoresist layer of patterning as mask, described dielectric layer is carried out to etching, then remove the photoresist layer of described patterning.
4. the manufacture method of COMS imageing sensor as claimed in claim 1, is characterized in that, described protective layer is suicide block film.
5. the manufacture method of COMS imageing sensor as claimed in claim 4, is characterized in that, the thickness of described protective layer is
6. the manufacture method of COMS imageing sensor as claimed in claim 1, it is characterized in that, form grid oxic horizon and grid polycrystalline silicon in Semiconductor substrate before, also comprise: carry out Implantation and form the second doped region at described semiconductor substrate surface, described the second doped region is positioned at grid polycrystalline silicon one side.
7. the manufacture method of COMS imageing sensor as claimed in claim 6, it is characterized in that, also comprise: carry out Implantation in inner the 3rd doped region that forms of described Semiconductor substrate, described the 3rd doped region is positioned at the opposite side of described grid polycrystalline silicon, contrary with the doping type of described the second doped region.
8. the manufacture method of COMS imageing sensor as claimed in claim 7, it is characterized in that, described the first doped region is positioned at the top of described the 3rd doped region, contrary with the doping type of described the 3rd doped region, and described the first doped region and the 3rd doped region form light sensitive diode.
9. the manufacture method of COMS imageing sensor as claimed in claim 8, it is characterized in that, after forming the first doped region, also comprise, Implantation is carried out in the second doped region, in described the second doped region, form the 4th doped region, described the 4th doped region is contrary with the doping type of described the second doped region, forms floating diffusion region.
10. right to use requires the COMS imageing sensor that the manufacture method of the COMS imageing sensor described in 1～9 is made, and it is characterized in that, comprising:
Semiconductor substrate;
Be arranged in floating diffusion region, transmission transistor, the light sensitive diode of described Semiconductor substrate;
Described floating diffusion region comprises described the second doped region and described the 4th doped region, and described the second doped region is contrary with the doping type of described the 4th doped region, and described the 4th doped region is arranged in described the second doped region;
Described light sensitive diode comprises the first doped region and the 3rd doped region, and described the first doped region is contrary with the doping type of described the 3rd doped region, and described the first doped region is positioned at described the 3rd top, doped region; Described the first doped region is contrary with the doping type of the 3rd doped region;
Described transmission transistor comprises: be positioned at grid oxic horizon and grid polycrystalline silicon in described Semiconductor substrate, be positioned at described grid polycrystalline silicon side wall around; Described the first doped region and the second doped region are positioned at the both sides of grid polycrystalline silicon.
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| CN105428383A (en) * | 2015-12-21 | 2016-03-23 | 豪威科技(上海)有限公司 | Complementary metal semiconductor (CMOS) image sensor and fabrication method thereof |
| CN106449683A (en) * | 2016-10-10 | 2017-02-22 | 上海华虹宏力半导体制造有限公司 | Coms image sensor and manufacturing method thereof |
| CN107068706A (en) * | 2017-04-14 | 2017-08-18 | 上海华虹宏力半导体制造有限公司 | The manufacture method of cmos image sensor |
| CN110224038A (en) * | 2018-03-02 | 2019-09-10 | 中芯国际集成电路制造(上海)有限公司 | Photodiode and forming method thereof |
| CN115020504A (en) * | 2022-04-28 | 2022-09-06 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing silicon detector |
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| CN103474442A (en) * | 2013-08-29 | 2013-12-25 | 上海宏力半导体制造有限公司 | COMS (complementary metal-oxide semiconductor) image sensor and manufacturing method thereof |
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| CN105428383A (en) * | 2015-12-21 | 2016-03-23 | 豪威科技(上海)有限公司 | Complementary metal semiconductor (CMOS) image sensor and fabrication method thereof |
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| CN115020504A (en) * | 2022-04-28 | 2022-09-06 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing silicon detector |
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