CN103882409A - Source conveying gas path device with adjustable mixing ratio - Google Patents
Source conveying gas path device with adjustable mixing ratio Download PDFInfo
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- CN103882409A CN103882409A CN201410092524.8A CN201410092524A CN103882409A CN 103882409 A CN103882409 A CN 103882409A CN 201410092524 A CN201410092524 A CN 201410092524A CN 103882409 A CN103882409 A CN 103882409A
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Abstract
The invention provides a source conveying gas path device with an adjustable mixing ratio. The source conveying gas path device comprises a carrier gas main pipeline, M pneumatic valves and N source carrier gas mixing pipelines, wherein an inlet of the carrier gas main pipeline is connected with a carrier gas source; outlets of the M pneumatic valves are respectively connected to M growing positions in a film deposition cavity; for each of the N source carrier gas mixing pipelines, an inlet of the source carrier gas mixing pipeline is connected to the carrier gas main pipeline, an organic source gas and an inlet of a doped source gas specific to the organic source gas, and M outlets are respectively connected to inlets of corresponding pneumatic valves in the M pneumatic valves. According to the source conveying gas path device, different reaction source materials are respectively sent to a reaction chamber through respective growing pipelines, and thus a reaction source material is prevented from being polluted in a first time and a final time.
Description
Technical field
The present invention relates to semiconductor devices manufacturing technology field, relate in particular to a kind of source being applied in film deposition apparatus and carry the adjustable gas path device of ratio of mixture.
Background technology
MOCVD (Metal Organic Chemical Vapor Deposition; metal-organic chemical vapor deposition equipment) equipment; it is the key equipment of compound semiconductor epitaxial investigation of materials and production; the large-scale industrial that is particularly suitable for compound semiconductor functional structure material is produced; the irreplaceable core semiconductor equipment of other semiconductor devices; being the Main Means of producing semiconductor photoelectric device and microwave device material in the world today, is that the current information industry development, national defence new and high technology break through indispensable strategic high-tech semiconductor equipment.
With MOCVD equipment growing film material, conventionally need various source materials and gas carrier.Source material comprises metallorganics (MO) and gas source, it is the material that participates in chemical reaction and contain origin material composition in resultant, gas carrier comprises nitrogen, hydrogen and rare gas element etc., and these gases only carry source material and enter in reaction chamber, and itself does not participate in chemical reaction.
Conventionally reaction source material and gas carrier are all by Pipe transfer, its flow is controlled by mass flowmeter (MFC), the break-make of gas is controlled by the switching of valve, and these gases enter reaction chamber through certain operation, realize the epitaxy of differing materials.The source of traditional MOCVD equipment carries gas circuit that different source gas is transported to growth room's front end mass flowmeter after mixing, then by the switching of operated pneumatic valve, source gas is transported to growth room by same group of growth/emptying multichannel combination valve.
And realizing in process of the present invention, applicant finds in existing MOCVD equipment, different source gas and impurity gas thereof all enter in MOCVD chamber by same source carrier gas mixed pipe line, and deposit in the process of two kinds of different films in priority, early stage, residual gas may affect the source γ-ray emission in later stage, thereby was difficult to realize the epitaxy of high uniformity, high quality multicomponent alloy material.
Summary of the invention
(1) technical problem that will solve
In view of above-mentioned technical problem, the invention provides a provenance and carry the adjustable gas path device of ratio of mixture, to overcome the problem that early stage, residual gas may affect the source γ-ray emission in later stage.
(2) technical scheme
According to an aspect of the present invention, provide a provenance to carry the adjustable gas path device of ratio of mixture, having comprised: carrier gas main line, its entrance is connected to carrier gas source; M operated pneumatic valve, its outlet is connected to respectively M growth position in thin film deposition chamber; And the source carrier gas mixed pipe line on N road, for each Lu Eryan in this N road source carrier gas mixed pipe line, its entrance is connected to carrier gas main line and a kind of organic source gas and the entrance for the doped source gas of this organic source gas, and its M outlet is connected to respectively the entrance of corresponding operated pneumatic valve in M operated pneumatic valve.
(3) beneficial effect
Can find out from technique scheme, source of the present invention carries the adjustable gas path device of ratio of mixture to have following beneficial effect:
(1) this source carries the adjustable gas path device of ratio of mixture to comprise the source carrier gas mixed pipe line of multichannel, every enters lumen road and includes corresponding growth pipeline and vent line, different reaction source materials is sent into respectively to reaction chamber by growth pipeline separately, the pollution of twice reaction source material before and after having avoided;
(2) in the growth pipeline of the source carrier gas mixed pipe line on Mei road, can realize the each bypass duct line source of source pneumatic outlet gas mixture ratio example adjustable, the source gaseous fraction that makes to be injected into different zones in growth room can independently be adjusted, accurately control, thus the epitaxy of the high uniformity of realization, high quality multicomponent alloy material;
(3) by the quick switching to growth/emptying multichannel combination valve, can be used for the multilayer hetero-structure material that growth interface is precipitous, can be used for all gas of MOCVD extension.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that the adjustable gas path device of ratio of mixture is carried in first embodiment of the invention source;
Fig. 2 is the schematic diagram that the adjustable gas path device of ratio of mixture is carried in second embodiment of the invention source.
[main element nomenclature of the present invention]
01,06-compensation mass-flow gas meter;
02,03,07, the pressure controller of 08-with flow indication;
04,09-differential pressure meter;
05/11～15/10/16～20-growth/emptying multichannel combination valve;
21～30-mass flowmeter;
31～35-operated pneumatic valve;
36～37-bellows regulating valve;
38～42 operated pneumatic valves.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.It should be noted that, in accompanying drawing or specification sheets description, similar or identical part is all used identical figure number.The implementation that does not illustrate in accompanying drawing or describe is form known to a person of ordinary skill in the art in affiliated technical field.In addition, although the demonstration of the parameter that comprises particular value can be provided herein, should be appreciated that, parameter is without definitely equaling corresponding value, but can in acceptable error margin or design constraint, be similar to corresponding value.
The invention provides a provenance and carry the adjustable gas path device of ratio of mixture, can realize the independent controllability of source gaseous fraction in the each source pneumatic outlet tap line that enters growth room, meet the harsh requirement of epitaxial material to the meticulous control key parameter of component, thus the epitaxy of the high uniformity of realization, high quality multicomponent alloy material.
In one exemplary embodiment of the present invention, provide a kind of source for MOCVD equipment to carry the adjustable gas path device of ratio of mixture.Fig. 1 is the schematic diagram that the adjustable gas path device of ratio of mixture is carried in first embodiment of the invention source.In Fig. 1 and Fig. 2, the interlacing line of bending type represents that two pipelines are not connected.And " fourth " font of line-type connection represents that two pipelines are connected.
Please refer to figure l, this source carries the adjustable gas path device of ratio of mixture to comprise: compensation mass- flow gas meter 01,06, pressure controller 02,07 with flow indication on growth pipeline, pressure controller 03,08 with flow indication on vent line, differential pressure meter 04,09, growth/emptying multichannel combination valve, diverted mass flow flow 21,22 ... 30, outlet cut-off pneumavalve 31,32 ... 35, vent line bellows regulating valve 36,37 is connected gas piping between mass flowmeter and valve.
Specifically, the present embodiment source carries the adjustable gas path device of ratio of mixture to comprise: carrier gas main line, and its entrance is connected to carrier gas source; 5 operated pneumatic valves (31～35), its outlet is connected to respectively 5 growth positions of MOCVD chamber; The source carrier gas mixed pipe line on 2 tunnels, for each Lu Eryan in this 2 tunnel source carrier gas mixed pipe line, its entrance is connected to carrier gas main line and a kind of organic source gas and the entrance for the doped source gas of this organic source gas, and its 5 outlets are connected to respectively the entrance of corresponding operated pneumatic valve in described 5 operated pneumatic valves.
In the present embodiment, the source gas of each source carrier gas mixed pipe line can be selected different flow value, thereby realization enters the source gas ratio of growth room's different zones and can independently regulate as required, the source of realizing in MOCVD equipment carries ratio of mixture accurately adjustable, thus the epitaxy of the high uniformity of realization, high quality multicomponent alloy material.
Below carry each integral part of the adjustable gas path device of ratio of mixture to carry out respective description to the present embodiment source respectively.
It can be also gas pipeline that the entrance of carrier gas main line and source air pipe can be connected to gas container.Wherein, carrier gas can be that hydrogen can be also nitrogen, and nebulizer gas pressure is 20psig-40psig.Organic source gas is depending on material to be prepared, the source gases such as such as Al source, Ga source, Fe source, In source, Mg source, silane.
As shown in Figure 1, the way N of source carrier gas mixed pipe line is determined by the kind of leading organic source gas, preparation AlGaN film, and Al source and Ga source are main organic source gas, therefore need two groups of source carrier gas mixed pipe lines.Source gas (comprising main organic source gas and doped source gas) pipeline number is determined by source gaseous species quantity, for example, if preparation AlGaN/n-GaN/GaN film, need to main source gas TMGa and TMAl, therefore need two groups of source air pipes, n-GaN grows simultaneously, need to carry out Si doping, need 1 road Si impure source gas pipeline, therefore, need altogether 3 source, tunnel air pipes.Although the present embodiment describes as an example of the source air pipe on 3 tunnels example, the source air pipe of it will be apparent to those skilled in the art that is not limited to 3 tunnels, and it can be multichannel equally, is generally 4 tunnels or 5 tunnels.
Continue referring to Fig. 1, take the source carrier gas mixed pipe line of the first via as example, this source carrier gas mixed pipe line comprises: compensation gas diverted mass flow under meter (MFC) 01, and its entrance is connected to carrier gas main line by pipeline; With first pressure controller (RTl) 02 of flow indication, its entrance is connected to carrier gas main line by pipeline, and its outlet is connected to growth pipeline; With second pressure controller (RT2) 03 of flow indication, its entrance is connected to carrier gas main line by pipeline, and its outlet is connected to vent line, and the end of this vent line is connected to exhaust port by bellows regulating valve; Differential pressure meter (DG) 04, is connected between the first pressure controller 02 and the outlet of the second pressure controller 03 by pipeline; Growth/emptying multichannel the combination valve of 1 input gas of carrier gas, its central source input terminus is connected to the outlet of compensation mass-flow gas meter (MFC) 01 by pipeline; Growth/emptying multichannel the combination valve (11～15) of 5 input source gases, wherein, the source gas outlet end of each growth/emptying multichannel combination valve is connected to growth pipeline by pipeline; Its emptying end is connected to vent line by bellows regulating valve 36; Its central source input terminus is connected to main organic source gas and the doped source gas for the organic source of this master gas; 5 diverted mass flow under meters (MFC) (21～25), wherein, the entrance of each diverted mass flow under meter is connected to growth pipeline, and its outlet is as the outlet of this source, road carrier gas mixed pipe line, thus a branch road of formation growth pipeline.
In the growth pipeline of the source on each road carrier gas mixed pipe line, after carrier gas and source gas mix fully, enter the predetermined position in MOCVD chamber by diverted mass flow under meter and operated pneumatic valve.And, by the flow set of 5 diverted mass flow under meters, the switch combination of operated pneumatic valve, realize the accurate control of five tap line components of source gas, final to growth room or emptying object.
Can find out from above-described embodiment, each Lu Yuanqi enters the number of growth/emptying multichannel combination valve of input source gas in lumen road by leading organic source gas and relevant for the number of the doped source gas of the organic source of this master gas, be not limited to 5, they can also 6 or more.In addition, it is definite by the number of growth position in MOCVD chamber that J is counted in the outlet of each source, road carrier gas mixed pipe line, is generally 3～5.
It should be noted that operated pneumatic valve (31～35) is arranged on the downstream of 5 diverted mass flow under meters (21～25), near one end of diverted mass flow under meter, and reduce the length of operated pneumatic valve to gas piping between growth room as far as possible.
Please refer to Fig. 1, each tap line in growth tube line source pneumatic outlet gas circuit is by valve 31,32 separately ... 35 realize switching and are communicated with growth room.Advantageously, each valve is operated pneumatic valve, and described operated pneumatic valve is pneumatic bellows valve or pneumatic diaphragm valve.
The vent line outlet gas circuit of two groups of source carrier gas mixed pipe lines is connected to bellows regulating valve (36,37), and these two bellows regulating valves are for regulating the flow velocity of vent line and being communicated with tail gas emptying pipe.
Below when preparing three kinds of concrete compound semiconductor materials, the working process of the adjustable gas path device of ratio of mixture is carried in the present embodiment source.
Scene 1:
When the material of extension is during as AlGaN ternary-alloy material, carrier gas enters from entrance 0, Al source is from gas inlet, first group of gas circuit source 11, 12 ... 15 any point enter, enter growth pipeline through the control of outgrowth/emptying multichannel combination valve, through diverted mass flow under meter 21, 22 ... 25 control each tap line flow, Ga source is from gas inlet, second group of gas circuit source 16, 17 ... 20 any point enter, enter growth pipeline through the control of outgrowth/emptying multichannel combination valve, through diverted mass flow under meter 26, 22 ... 30 control each tap line flow, five tap line of Al/Ga are mixed into waiting status before growth in ratio separately, in the time that gas need to enter growth room, at this moment operated pneumatic valve 31, 32...35 open, gas enters growth room and participates in epitaxy, in the time that gas does not need to enter growth room, operated pneumatic valve 31,32...35 close, and gas is emptying through growth/emptying multichannel combination valve vent line.
Scene 2:
When the material of extension is during as high resistant GaN material, need to carry out Fe doping, carrier gas enters from entrance 0, Fe source is from gas inlet, first group of gas circuit source 11, 12 ... 15 any point enter, enter growth pipeline through the control of outgrowth/emptying multichannel combination valve, through diverted mass flow under meter 21, 22 ... 25 control each tap line flow, Ga source is from gas inlet, second group of gas circuit source 16, 17 ... 20 any point enter, enter growth pipeline through the control of outgrowth/emptying multichannel combination valve, through diverted mass flow under meter 26, 22 ... 30 control each tap line flow, five tap line of Fe/Ga are mixed into waiting status before growth in ratio separately, in the time that gas need to enter growth room, at this moment operated pneumatic valve 31, 32...35 open, gas enters growth room and participates in epitaxy, in the time that gas does not need to enter growth room, operated pneumatic valve 31,32...5 close, and gas is emptying through growth/emptying multichannel combination valve vent line.
Scene 3:
In addition, when the material of extension is during as AlGaN/InGaN super crystal lattice structure material, carrier gas enters from entrance 0, Al, Ga source is from gas inlet, first group of gas circuit source 11, 12 ... 15 any point enter, enter growth pipeline through the control of outgrowth/emptying multichannel combination valve, through diverted mass flow under meter 21, 22 ... 25 control each tap line flow, In, Ga source is from gas inlet, second group of gas circuit source 16, 17 ... 20 any point enter, enter growth pipeline through the control of outgrowth/emptying multichannel combination valve, through diverted mass flow under meter 26, 22 ... 30 control each tap line flow, by growth/emptying multichannel combination valve control Al separately, Ga source and In, Ga source enters five tap line, and be mixed into waiting status before growth in ratio separately, in the time that gas need to enter growth room, at this moment operated pneumatic valve 31, 32...35 open, gas enters growth room and participates in epitaxy, and at Al, Ga source and In, between Ga source, switch fast, in the time that gas does not need to enter growth room, operated pneumatic valve 31,32...35 close, and gas is emptying through growth/emptying multichannel combination valve vent line.
In the present embodiment, variation based on desired source gaseous fraction, control accuracy, combination selection source gas by two groups of independently grow/emptying multichannel combination valves and diverted mass flow under meter is also independently controlled each tap line flow by gas circuit, the source of realizing carries ratio of mixture adjustable, meets the needs of growth high uniformity, the precipitous multilayer hetero-structure material of high quality epitaxial material or interface etc.
So far, first embodiment of the invention source carries the adjustable gas path device of ratio of mixture to introduce complete.
Fig. 2 is the schematic diagram that the adjustable gas path device of ratio of mixture is carried in second embodiment of the invention source.Referring to Fig. 2, the present embodiment source conveying adjustable gas path device of ratio of mixture and the first embodiment are substantially similar, difference is only gas circuit to do following improvement: every branch road of growth pipeline is all connected to exhaust emissions pipeline by operated pneumatic valve, in order to meet the object that reduces Material growth memory effect.
As the end gas circuit in Fig. 2, be subdivided into five tap line, in corresponding growth room is taken over a business respectively, in, in, at home and abroad, outer ring gas circuit, the operated pneumatic valve 31,32 arranging by downstream ... whether 35 control gas enters growth room; At operated pneumatic valve 31,32 ... five tap line are drawn by Y-junction by 35 upstream Liang Zu tap line intersections, rear end tandem pneumatic valve 38,39 ... 42, control from 21,22 ... 30 mass flowmeters are exported to the emptying of joint pipeline gas, reduce the memory effect in growth multilayer change of component Material growth process.
The present embodiment is mainly that every branch road of growth pipeline has been increased to emptying pipeline, by the switch combination of valve, when realizing different components source gas and switching, prime component source gas emptying, can reduce the memory effect of process of growth, optimize the control accuracy of source gaseous fraction.
So far, second embodiment of the invention source carries the adjustable gas path device of ratio of mixture to introduce complete.
So far, by reference to the accompanying drawings the present embodiment be have been described in detail.Describe according to above, those skilled in the art should carry the adjustable gas path device of ratio of mixture to have clearly understanding to source of the present invention.
In addition, the above-mentioned definition to each element, method is not limited in various concrete structures, shape or the method in embodiment, mentioned, and those of ordinary skill in the art can know simply and replace it, for example:
(1) source of the present invention carries the adjustable gas path device of ratio of mixture can allow to have multipath gas Jin Ren growth room simultaneously.In addition, in the time of the not high material of growth components, uniformity requirement, also can select only to use wherein one group of gas circuit, the mode the same with legacy equipment carried out Material growth;
(2), except MOCVD equipment, the adjustable gas path device of source conveying ratio of mixture of the present invention can also be used for other equipment, for example PECVD, CVD, LPCVD.
In sum, the invention provides a provenance and carry the adjustable gas path device of ratio of mixture, its each bypass duct line source gas can be selected different flow value, thereby realization enters the source gas ratio of growth room's different zones and can independently regulate as required, the source of realizing in MOCVD equipment carries ratio of mixture accurately adjustable, thus the epitaxy of the high uniformity of realization, high quality multicomponent alloy material.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a provenance is carried the adjustable gas path device of ratio of mixture, it is characterized in that, comprising:
Carrier gas main line, its entrance is connected to carrier gas source;
M operated pneumatic valve, its outlet is connected to respectively M growth position in thin film deposition chamber; And
The source carrier gas mixed pipe line on N road, for each Lu Eryan in this N road source carrier gas mixed pipe line, its entrance is connected to carrier gas main line and a kind of organic source gas and the entrance for the doped source gas of this organic source gas, and its M outlet is connected to respectively the entrance of corresponding operated pneumatic valve in a described M operated pneumatic valve.
2. the adjustable gas path device of ratio of mixture is carried in source according to claim 1, it is characterized in that, each source, the road carrier gas mixed pipe line in the source carrier gas mixed pipe line on described N road comprises:
Compensation gas diverted mass flow under meter, its entrance is connected to described carrier gas main line;
With the first pressure controller of flow indication, its entrance is connected to described carrier gas main line, and its outlet is connected to growth pipeline;
With the second pressure controller of flow indication, its entrance is connected to described carrier gas main line, and its outlet is connected to vent line, and the end of this vent line is connected to exhaust port by bellows regulating valve;
Growth/emptying multichannel the combination valve of 1 input gas of carrier gas, its central source input terminus is connected to the outlet of described compensation mass-flow gas meter;
Growth/emptying multichannel the combination valve of J input source gas, wherein, the source gas outlet end of each growth/emptying multichannel combination valve is connected to growth pipeline; Its emptying end is connected to vent line by described bellows regulating valve; Its central source input terminus is connected to respectively described master organic source gas and the source for the doped source gas of the organic source of this master gas; And
M diverted mass flow under meter, wherein, the entrance of each diverted mass flow under meter is connected to growth pipeline, and its outlet is as the outlet of the branch road of this source, road carrier gas mixed pipe line.
3. the adjustable gas path device of ratio of mixture is carried in source according to claim 2, it is characterized in that, also comprises:
Differential pressure meter, is connected between described the first pressure controller and the outlet of the second pressure controller.
4. the adjustable gas path device of ratio of mixture is carried in source according to claim 2, it is characterized in that, every branch road of described growth pipeline is all connected to exhaust emissions pipeline by operated pneumatic valve.
5. the adjustable gas path device of ratio of mixture is carried in source according to claim 1, it is characterized in that described N=2,3,4 or 5.
6. the adjustable gas path device of ratio of mixture is carried in source according to claim 1, it is characterized in that described M=2,3,4 or 5.
7. the adjustable gas path device of ratio of mixture is carried in source according to claim 1, it is characterized in that described J=2,3,4 or 5.
8. carry the adjustable gas path device of ratio of mixture according to the source described in any one in claim 1 to 7, it is characterized in that, described operated pneumatic valve is pneumatic bellows valve or pneumatic diaphragm valve.
9. carry the adjustable gas path device of ratio of mixture according to the source described in any one in claim 1 to 7, it is characterized in that, described carrier gas is hydrogen or nitrogen, and described organic source gas is Al source, Ga source, Fe source, In source, Mg source or silane source gas.
10. carry the adjustable gas path device of ratio of mixture according to the source described in any one in claim 1 to 7, it is characterized in that, described thin film deposition chamber is MOCVD chamber, PECVD chamber, CVD chamber or LPCVD chamber.
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Cited By (2)
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| CN110777428A (en) * | 2019-09-23 | 2020-02-11 | 北京北方华创微电子装备有限公司 | Gas transportation system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113502460B (en) * | 2021-09-09 | 2021-12-03 | 苏州长光华芯光电技术股份有限公司 | Preparation method of semiconductor structure and semiconductor growth equipment |
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| CN103882409B (en) | 2016-04-20 |
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