CN103928293B - A kind of method that before-metal medium layer is processed - Google Patents
A kind of method that before-metal medium layer is processed Download PDFInfo
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- CN103928293B CN103928293B CN201310012776.0A CN201310012776A CN103928293B CN 103928293 B CN103928293 B CN 103928293B CN 201310012776 A CN201310012776 A CN 201310012776A CN 103928293 B CN103928293 B CN 103928293B
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- medium layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
Abstract
The present invention relates to semiconductor chip fabrication process, the invention discloses a kind of method that before-metal medium layer is processed, the method is included on silicon chip deposit before-metal medium layer, uses HF solution to be carried out before-metal medium layer surface, then detects its defect number after reflux technique.The HF solution wherein using concentration to be 0.485% cleans before-metal medium layer 2 minutes, and defects count has obtained reducing significantly.The method that the present invention provides makes the defects count on before-metal medium layer surface be substantially reduced, and for the continuous leap on a surface of follow-up plain conductor, occurs without fracture and provides favourable surface configuration, improve the reliability of device.
Description
Technical field
The present invention relates to semiconductor chip fabrication process, particularly to a kind of side that before-metal medium layer is processed
Method.
Background technology
In the semiconductor chip fabrication process, it is often necessary to before metal sputtering, deposit one layer of insulating medium layer, i.e. gold
Belong to front medium layer, be used for improving the reliability of device, and before-metal medium layer requires to have low defect concentration, well stops gold
Belong to sodium ion ability etc..
At present, Films Prepared by APCVD (Atmospheric Pressure Chemical is generally used
VaporDeposition, be called for short APCVD) make power device before-metal medium layer.The pre-metal dielectric that this method is formed
Layer includes silicon dioxide, phosphorosilicate glass (PSG) or boron-phosphorosilicate glass (BPSG).The method operation is relatively easy, and deposition rate is also
Comparatively fast, it is also possible to avoid device by plasma damage, but easily there is chemical gas phase reaction in the method, due to temperature, atmosphere etc.
Uneven, easily to pile up agglomerating, form granule, these granules all can cause the defect of before-metal medium layer.
SC1(NH is generally used after deposition before reflux technique4OH+H2O2+H2And SC2(HCl+H O)2O2+H2O) cleanout fluid
Clean the granule on before-metal medium layer surface.SC1 cleanout fluid Cleaning principle is, H2O2Oxidation is had at silicon chip surface,
NH4OH in OH-It is provided that to silicon chip surface and granule negative charge, in the formation electricity repulsive interaction of granule Yu silicon chip surface.So
SC1 cleanout fluid can effectively go particle-removing, partial organic substances, and the drawback of SC1 cleanout fluid is that the ratio regular meeting of chemical liquids changes,
H2O2It is easy to volatilization, needs the most periodically to increase H2O2.SC2 cleanout fluid Cleaning principle is, H2O2Have at silicon chip surface
Oxidation, HCl then can carry out dissolving reaction with Na, Fe oxide in film layer, thus be situated between before effectively removing metal
The metal ion on matter layer surface.SC2 cleanout fluid is mainly used in removing the metal ion on before-metal medium layer surface, SC2 cleanout fluid
The ratio regular meeting that drawback is chemical liquids change, H2O2It is easy to volatilization, needs the most periodically to increase H2O2。
The reflux technique carried out after cleaning, can improve the flatness on before-metal medium layer surface, and improve silicon chip table
The Step Coverage in face.For BPSG, by mixing P, on the one hand moveable metal cation (predominantly Na can be caught+)；Separately
On the one hand, it is also possible to reduce reflux temperature.But easily form granule, cause substantial amounts of defect to produce.
The defect of before-metal medium layer, including the granule of agglomerating formation in deposit, also include P in backflow separate out formed
Grain.These defects not only have influence on the quality of itself, also affect the line of metal in subsequent metal sputtering technology simultaneously,
Such as cause metal latticing, broken strip, metal level cavity etc., thus have influence on the reliability of device.
Summary of the invention
The invention provides a kind of method that before-metal medium layer is processed, for reducing lacking of before-metal medium layer
Fall into.
The invention provides a kind of method processing before-metal medium layer, the method includes:
HF solution is used to clean before-metal medium layer.
Described employing HF solution cleans before-metal medium layer specifically, the HF solution using concentration to be 0.48% ~ 0.49% is clear
Wash before-metal medium layer, more preferably use the HF solution of 0.48% ~ 0.49% to clean before-metal medium layer 1 ~ 2 minute, preferably
The HF solution using concentration to be 0.485% cleans before-metal medium layer 2 minutes.
Described method also includes the reflux technique mixing P, is specially and before-metal medium layer is added heat fusing so that it is soften back
Stream.
The temperature of described reflux technique is 950 DEG C, and return time is 40 ~ 45 minutes.
Described before-metal medium layer is boron-phosphorosilicate glass or phosphorosilicate glass.
The invention still further relates to the application in the semiconductor chip fabrication process of described method.
The present invention at least achieves following beneficial effect:
Using HF solution to replace SC1 and SC2 cleanout fluid, the defect of before-metal medium layer can be very significantly improved, permissible
Greatly reduce the granule of before-metal medium layer, reduce the level of its defect, thus improve the reliability of device.And, use HF
Solution replaces SC1 and SC2 cleanout fluid, shortens the process time, operable under room temperature, greatly reduces process costs, simplifies
Processing step.
Detailed description of the invention
Be exemplified below embodiment illustrate the inventive method be applied to clean BPSG before-metal medium layer, the inventive method
Cleanout fluid be also applied for clean PSG before-metal medium layer.The present invention is not limited to following embodiment.
Embodiment 1
The concrete operations mode of the present embodiment is as follows:
Using Films Prepared by APCVD APCVD method to deposit before-metal medium layer on silicon chip, deposition temperature is 400 DEG C
~ 450 DEG C, doped with boron weight ratio is 2 ~ 3%, Doping Phosphorus weight ratio 6 ~ 7%, has obtained the before-metal medium layer of BPSG, described gold
Belonging to and there is granule on front medium layer, described granule can cause the defect of before-metal medium layer；
The HF solution using concentration to be 0.49% cleans described before-metal medium layer, cleans at ambient temperature, scavenging period
It it is 1 minute.Due to HF and SiO2Reaction, thus the very thin one layer dielectric layer on before-metal medium layer surface is gone by drift, passes through film
Thick measurement obtains corrosion rate, is calculated this drift de-layer about 400 angstroms then in conjunction with the process time, has also got rid of part simultaneously
Granule；
Use the reflux technique mixing P after cleaning, be specially to be entered by before-metal medium layer in the phosphorous atmosphere of temperature 950 DEG C
Row melt process, makes the before-metal medium layer of BPSG soften backflow, and return time is 40 ~ 45 minutes.By metal during owing to cleaning
The of a relatively high P drift of front medium layer surface concentrations is gone, and does not therefore easily cause P when backflow and separates out and the granule that produces, reduces
The defect of before-metal medium layer, improves the flatness on its surface；
Using the defect of KLA defectoscopy equipment Inspection before-metal medium layer, flaw size 0.3um, detection method is
The mode of light field scanning, the defect number detected is 531.
Embodiment 2
The concrete operations mode of the present embodiment is as follows:
Using Films Prepared by APCVD APCVD method to deposit before-metal medium layer on silicon chip, deposition temperature is 400 DEG C
~ 450 DEG C, doped with boron weight ratio is 2 ~ 3%, Doping Phosphorus weight ratio 6 ~ 7%, has obtained the before-metal medium layer of BPSG, described metal
There is granule on front medium layer, described granule can cause the defect of before-metal medium layer；
The HF solution using concentration to be 0.485% cleans described before-metal medium layer, cleans at ambient temperature, during cleaning
Between be 1.5 minutes.Due to HF and SiO2Reaction, thus the very thin one layer dielectric layer on before-metal medium layer surface is gone by drift, logical
Cross film thickness measuring and obtain corrosion rate, be calculated this drift de-layer about 600 angstroms then in conjunction with the process time, also get rid of simultaneously
Partial particulate；
Use the reflux technique mixing P after cleaning, be specially to be entered by before-metal medium layer in the phosphorous atmosphere of temperature 950 DEG C
Row melt process, makes the before-metal medium layer of BPSG soften backflow, and return time is 40 ~ 45 minutes.By metal during owing to cleaning
The of a relatively high P drift of front medium layer surface concentrations is gone, and does not therefore easily cause P when backflow and separates out and the granule that produces, reduces
The defect of before-metal medium layer, improves the flatness on its surface, and the temperature of described reflux technique is 950 DEG C, return time
It it is 40 ~ 45 minutes；
Using the defect of KLA defectoscopy equipment Inspection before-metal medium layer, flaw size 0.3um, detection method is
The mode of light field scanning, the defect number detected is 211.
Embodiment 3
The concrete operations mode of the present embodiment is as follows:
Using Films Prepared by APCVD APCVD method to deposit before-metal medium layer on silicon chip, deposition temperature is 400 DEG C
~ 450 DEG C, doped with boron weight ratio is 2 ~ 3%, Doping Phosphorus weight ratio 6 ~ 7%, has obtained the before-metal medium layer of BPSG, described metal
There is granule on front medium layer, described granule can cause the defect of before-metal medium layer；
The HF solution using concentration to be 0.485% cleans described before-metal medium layer, cleans at ambient temperature, during cleaning
Between be 2 minutes.Due to HF and SiO2Reaction, thus the very thin one layer dielectric layer on before-metal medium layer surface is gone by drift, passes through
Film thickness measuring obtains corrosion rate, is calculated this drift de-layer about 800 angstroms then in conjunction with the process time, has also got rid of portion simultaneously
Divide granule；
Use the reflux technique mixing P after cleaning, be specially to be entered by before-metal medium layer in the phosphorous atmosphere of temperature 950 DEG C
Row melt process, makes the before-metal medium layer of BPSG soften backflow, and return time is 40 ~ 45 minutes.By metal during owing to cleaning
The of a relatively high P drift of front medium layer surface concentrations is gone, and does not therefore easily cause P when backflow and separates out and the granule that produces, reduces
The defect of before-metal medium layer, improves the flatness on its surface, and the temperature of described reflux technique is 950 DEG C, return time
It it is 40 ~ 45 minutes；
Using the defect of KLA defectoscopy equipment Inspection before-metal medium layer, flaw size 0.3um, detection method is
The mode of light field scanning, the defect number detected is 171.
Embodiment 4
The concrete operations mode of the present embodiment is as follows:
Using Films Prepared by APCVD APCVD method to deposit before-metal medium layer on silicon chip, deposition temperature is 400 DEG C
~ 450 DEG C, doped with boron weight ratio is 2 ~ 3%, Doping Phosphorus weight ratio 6 ~ 7%, has obtained the before-metal medium layer of BPSG, described gold
Belonging to and there is granule on front medium layer, described granule can cause the defect of before-metal medium layer；
The HF solution using concentration to be 0.48% cleans described before-metal medium layer, cleans at ambient temperature, scavenging period
It it is 2 minutes.Due to HF and SiO2Reaction, thus the very thin one layer dielectric layer on before-metal medium layer surface is gone by drift, passes through film
Thick measurement obtains corrosion rate, is calculated this drift de-layer about 700 angstroms then in conjunction with the process time, has also got rid of part simultaneously
Granule；
Use the reflux technique mixing P after cleaning, be specially to be entered by before-metal medium layer in the phosphorous atmosphere of temperature 950 DEG C
Row melt process, makes the before-metal medium layer of BPSG soften backflow, and return time is 40 ~ 45 minutes.By metal during owing to cleaning
The of a relatively high P drift of front medium layer surface concentrations is gone, and does not therefore easily cause P when backflow and separates out and the granule that produces, reduces
The defect of before-metal medium layer, improves the flatness on its surface, and the temperature of described reflux technique is 950 DEG C, return time
It it is 40 ~ 45 minutes；
Using the defect of KLA defectoscopy equipment Inspection before-metal medium layer, flaw size 0.3um, detection method is
The mode of light field scanning, the defect number detected is 192.
Comparative example
The concrete operations mode of this comparative example is as follows:
Using Films Prepared by APCVD APCVD method to deposit before-metal medium layer on silicon chip, deposition temperature is 400 DEG C
~ 450 DEG C, doped with boron weight ratio is 2 ~ 3%, Doping Phosphorus weight ratio 6 ~ 7%, has obtained the before-metal medium layer of BPSG, described metal
There is granule on front medium layer, described granule can cause the defect of before-metal medium layer；
HF cleanout fluid is changed to SC1(NH in prior art4OH+H2O2+H2And SC2(HCl+H O)2O2+H2O) cleanout fluid.
Each component ratio of SC1 cleanout fluid is about NH4OH:H2O2:H2O=1:2:10, under the conditions of temperature 25 ~ 45 DEG C, before cleaning metal
Dielectric layer 8 ~ 10 minutes, SC1 can effectively remove partial particulate.The ratio of each component of SC2 cleanout fluid is about HCl:H2O2:H2O=1:
2:10, under the conditions of temperature 25 ~ 45 DEG C, cleans before-metal medium layer 8 ~ 10 minutes, H2O2Oxidation is had at silicon chip surface, and
HCl then can carry out dissolving reaction with Na, Fe oxide in film layer, thus effectively removes the gold on before-metal medium layer surface
Belong to ion.
Use the reflux technique mixing P after cleaning, be specially to be entered by before-metal medium layer in the phosphorous atmosphere of temperature 950 DEG C
Row melt process, makes the before-metal medium layer of BPSG soften backflow, and return time is 40 ~ 45 minutes.
Using the defect of KLA defectoscopy equipment Inspection before-metal medium layer, flaw size 0.3um, detection method is
The mode of light field scanning, the defect number detected is 927.
In conjunction with comparative example and embodiment 1 ~ 4 it is found that use prior art SC1 and SC2 cleanout fluid to be situated between before cleaning metal
Matter layer, the process time is long, and processing step is many, and temperature is higher, and the defect number eventually detected is 927；Use HF in the present invention
Solution cleans before-metal medium layer, and the process time is short, and only 1 ~ 2 minute, a step just can be cleaned, and can be at room temperature
Operation, reduces cost, and the defect number eventually detected relative to prior art has significantly reduction, and preferred version uses concentration
Be 0.485% HF solution clean the defect number that eventually detects for 2 minutes of before-metal medium layer and be only 171.Visible, use this
Before-metal medium layer hinge structure of cleaning the HF solution of invention can reduce the defect of before-metal medium layer largely
Number.The invention still further relates to said method application in the semiconductor chip fabrication process.
Obviously, those skilled in the art can carry out various change and the modification essence without deviating from the present invention to the present invention
God and scope.So, if these amendments of the present invention and modification belong to the scope of the claims in the present invention and equivalent technologies thereof
Within, then the present invention is also intended to comprise these change and modification.
Claims (3)
1. the method that before-metal medium layer is processed, it is characterised in that described method includes:
The HF solution using concentration to be 0.48%～0.49% cleans before-metal medium layer；
After cleaning, use the reflux technique mixing P that described before-metal medium layer is softened backflow；
Wherein, described before-metal medium layer is to use Films Prepared by APCVD APCVD method to deposit on silicon chip to obtain boron phosphorus
The before-metal medium layer of silica glass BPSG, deposition temperature is 400 DEG C～450 DEG C, and doped with boron weight ratio is 2～3%, Doping Phosphorus weight
Amount ratio 6～7%；
Described employing concentration is that the HF solution cleaning before-metal medium layer of 0.48%～0.49% is particularly as follows: employing concentration is
The HF solution of 0.48%～0.49% cleans before-metal medium layer 1～2 minutes；
After described cleaning, use the reflux technique mixing P that described before-metal medium layer is softened backflow, particularly as follows: in temperature 950
DEG C phosphorous atmosphere in described before-metal medium layer is carried out melt process, make the before-metal medium layer of described BPSG soften back
Stream, return time is 40～45 minutes.
2. the method for claim 1, it is characterised in that described employing concentration be 0.48%～0.49% employing HF molten
Liquid cleans before-metal medium layer 1～2 minutes specifically, the HF solution using concentration to be 0.485% cleans before-metal medium layer 2 points
Clock.
3. method application in the semiconductor chip fabrication process described in any one of claim 1-2.
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| CN201310012776.0A CN103928293B (en) | 2013-01-14 | 2013-01-14 | A kind of method that before-metal medium layer is processed |
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| CN201310012776.0A CN103928293B (en) | 2013-01-14 | 2013-01-14 | A kind of method that before-metal medium layer is processed |
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| CN103928293A CN103928293A (en) | 2014-07-16 |
| CN103928293B true CN103928293B (en) | 2016-12-28 |
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| CN106158593A (en) * | 2016-09-26 | 2016-11-23 | 上海先进半导体制造股份有限公司 | Manufacture the process of quasiconductor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834370A (en) * | 1995-09-01 | 1998-11-10 | Yamaha Corporation | Manufacture of semiconductor device containing polycide electrode |
| US5883002A (en) * | 1996-08-29 | 1999-03-16 | Winbond Electronics Corp. | Method of forming contact profile by improving TEOS/BPSG selectivity for manufacturing a semiconductor device |
| CN1341546A (en) * | 2001-09-07 | 2002-03-27 | 清华大学 | Graphic-arts technique method of metal layer on wafer with thick layer structure |
| US6399461B1 (en) * | 2001-01-16 | 2002-06-04 | Promos Technologies, Inc. | Addition of planarizing dielectric layer to reduce a dishing phenomena experienced during a chemical mechanical procedure used in the formation of shallow trench isolation regions |
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- 2013-01-14 CN CN201310012776.0A patent/CN103928293B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834370A (en) * | 1995-09-01 | 1998-11-10 | Yamaha Corporation | Manufacture of semiconductor device containing polycide electrode |
| US5883002A (en) * | 1996-08-29 | 1999-03-16 | Winbond Electronics Corp. | Method of forming contact profile by improving TEOS/BPSG selectivity for manufacturing a semiconductor device |
| US6399461B1 (en) * | 2001-01-16 | 2002-06-04 | Promos Technologies, Inc. | Addition of planarizing dielectric layer to reduce a dishing phenomena experienced during a chemical mechanical procedure used in the formation of shallow trench isolation regions |
| CN1341546A (en) * | 2001-09-07 | 2002-03-27 | 清华大学 | Graphic-arts technique method of metal layer on wafer with thick layer structure |
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Effective date of registration: 20220725 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871, Beijing, Haidian District Cheng Fu Road 298, founder building, 9 floor Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |
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