CN103943561A - Film forming method of low dielectric constant film - Google Patents
Film forming method of low dielectric constant film Download PDFInfo
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- CN103943561A CN103943561A CN201410193144.3A CN201410193144A CN103943561A CN 103943561 A CN103943561 A CN 103943561A CN 201410193144 A CN201410193144 A CN 201410193144A CN 103943561 A CN103943561 A CN 103943561A
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- dielectric constant
- low dielectric
- constant films
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- foaming agent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Abstract
The invention provides a film forming method of a low dielectric constant film. The method comprises the steps of forming a first metal layer; growing an etching barrier layer on the first metal layer; growing the low dielectric constant film on the etching barrier layer, wherein a liquid source stable process including more than two steps is introduced when the low dielectric constant film is grown; ultravioletly curing the low dielectric constant film; and depositing a photolithographic mask on the low dielectric constant film and photoetching and etching.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of film build method of low dielectric constant films.
Background technology
In the following copper wiring technique of 40 nanometer, in order to reduce time delay between line, the dielectric layer between two-layer interconnecting metal requires there is lower dielectric constant, and dielectric constant is lower, and time delay is less, and device speed is also just faster.The dielectric constant of the super low dielectric constant film that 40 nanometers are conventional is below 2.6.Except lower dielectric constant, also to guarantee that film has higher mechanical performance, comprise Young's modulus, hardness etc.The most frequently used method is to use pore-foaming agent to adopt the film of method deposition one deck carbon dope of PECVD at present, then by UV treatment, drives organic pore-foaming agent out of film, obtains porose carbon dope film.Ultraviolet ray irradiation can be by organic substance decomposing, then the form with gas departs from film, form hole, the introducing of hole can reduce dielectric constant, and the density of hole is larger conventionally, and diameter is larger, the dielectric constant obtaining is less, ultraviolet ray simultaneously also can link the silicon-carbon bonds in film again, forms finer and close skeleton structure, supports like this hole.The content of organic substance pore-foaming agent in deposition process directly determines the size of dielectric constant and the hardness of film, when film pore-foaming agent content is higher, through ultraviolet irradiation, the density of film hole is higher, aperture is larger, and the dielectric constant obtaining is the end of compared with, but hardness also can decrease, on the contrary, pore-foaming agent content is during the end of compared with, and the density of the hole of film is less, and aperture is less, the dielectric constant obtaining is higher, but hardness can increase greatly.In order to obtain lower time delay, must guarantee lower dielectric constant, but just sacrifice like this mechanical performance of film, therefore find a kind of just particularly important compared with the film build method of high-mechanical property again when can guarantee lower thin-film dielectric constant.
The conventional low dielectric constant films of industry mainly comprises three steps during the course in life at present: 1, and introduce liquid source reactant and also make stability of flow at a lower flow value; 2 deposition one deck carbon Si oxides are as resilient coating (reactant flow is very low); The low dielectric constant films (reactant flow is very high) that 3 depositions contain pore-foaming agent.This traditional growth pattern has liquid source flux process from low to high from second step to the three step processes, characteristic due to liquid source flux controller, this process generally will continue the time of 10S left and right, account for the time of whole thin film deposition than between 1/5th to 1/2nd, and be subject to the impact of liquid source flux controller stability, the process that flow rises can produce very large unsteadiness, and property of thin film is made a big impact.
Summary of the invention
Technical problem to be solved by this invention is for there being above-mentioned defect in prior art, and a kind of film build method that can make the more reliable and more stable low dielectric constant films of technique is provided.
In order to realize above-mentioned technical purpose, according to the present invention, provide a kind of film build method of low dielectric constant films, comprise successively and carrying out: first step, is used to form first layer metal layer; Second step, for the etching barrier layer of growing on first layer metal layer; Third step for the low dielectric constant films of growing on etching barrier layer, is wherein introduced liquid source stabilization process more than two steps when growth low dielectric constant films; The 4th step, for carrying out ultraviolet curing to low dielectric constant films; The 5th step deposits mask and carries out chemical wet etching on low dielectric constant films.
Preferably, low dielectric constant films is the carbon dope film that contains pore-foaming agent.
Preferably, described third step comprises: the first step, carry out the first not good liquor source reactant stabilization process, and wherein in the situation that not opening radio frequency, make liquid source predecessor flow into reaction chamber with first flow; Second step, in the situation that pore-foaming agent does not flow into reaction cavity and opens radio frequency, make the silicon source presoma and the oxygen helium that contain methyl key participate in reaction, thereby the carbon Si oxide that growth one deck does not contain pore-foaming agent is as resilient coating; The 3rd step, carries out the second not good liquor source reactant stabilization process, wherein in the situation that not opening radio frequency, makes liquid source predecessor flow into reaction chamber with the second flow, and wherein the second flow is greater than first flow; The 4th step, opens the radio frequency in reaction cavity, thus the low dielectric constant films that deposition contains pore-foaming agent.
Preferably, pore-foaming agent is the organic substance that comprises carbon and hydrogen, and the formation cavity of can dissociating and volatilize after ultraviolet ray is irradiated.
Preferably, first layer metal layer comprises a kind of in tungsten metal level, copper metal layer and aluminum metal layer.
Preferably, low dielectric constant films is carried out to ultraviolet curing and comprise that low dielectric constant films is carried out to ultraviolet ray to be irradiated.
Preferably, it is 20s-500s that low dielectric constant films is carried out to the time that ultraviolet ray irradiates, to low dielectric constant films carry out temperature that ultraviolet ray irradiates at 300 degree between 480 degree.
The present invention especially can advantageously be applied in 40 nanometers and following copper wiring technique.In advanced copper wiring technique, after forming first layer metal copper, the carbon dope film that growth contains pore-foaming agent, then by UV treatment, pore-foaming agent is driven out of, formed the film of porous, thereby when having reduced the dielectric constant of film, increased other mechanical performances such as hardness of film, then form second layer interconnection copper, so just reduce the RC time delay between two-layer interconnecting metal, guaranteed again the mechanical performance of dielectric layer simultaneously, increased the reliability of device.The present invention is by introducing liquid source predecessor stability of flow processes more than two steps, and the low-k of growing is thin; Pass through the method, can guarantee the growth quality of film resilient coating, can filter out again the impact that in film, liquid source predecessor causes from low to high, make subsequent deposition process more stable, the film pore-foaming agent content generating is higher, and the thin-film dielectric constant obtaining is lower.Meanwhile, owing to having filtered out liquid source flux uphill process, be not subject to the impact of liquid source flux controller stability, make technique more reliable and more stable.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily to the present invention, there is more complete understanding and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows the flow chart of the film build method of low dielectric constant films according to the preferred embodiment of the invention.
Schematic diagram after Fig. 2 schematically shows low dielectric constant films in the film build method of low dielectric constant films according to the preferred embodiment of the invention and deposited.
Schematic diagram after Fig. 3 schematically shows two metal layers in the film build method of low dielectric constant films according to the preferred embodiment of the invention and forms.
It should be noted that, accompanying drawing is used for illustrating the present invention, and unrestricted the present invention.Note, the accompanying drawing that represents structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
The present invention is mainly used in 40 nanometers and following copper wiring technique: in advanced copper wiring technique, after forming first layer metal copper, the film that growth one deck contains pore-foaming agent, then by UV treatment, pore-foaming agent is driven out of, form the film of porous, thereby other mechanical performances such as hardness of film when having reduced the dielectric constant of film, have been increased, then form second layer interconnection copper, so just reduced the RC time delay between two-layer interconnecting metal, guaranteed again the mechanical performance of dielectric layer, increased the reliability of device simultaneously.The content of pore-foaming agent is directly connected to the electrical properties of dielectric film and hardness etc., and when dielectric film pore-foaming agent content is higher, through ultraviolet irradiation, the density of film hole is higher, and aperture is larger, and the dielectric constant obtaining is the end of compared with.Traditional low dielectric constant films is 0 at initial stage of growth liquid source pore-foaming agent flow, and what grow out like this is one deck carbon Si oxide in fact, as resilient coating.Then pore-foaming agent starts to flow into cavity until arrive set point, the content of this all stage pore-foaming agent in film is from low to high, after the present invention is complete by the buffer growth traditional, increase the process of a step liquid source predecessor stability of flow, make liquid source pore-foaming agent stability of flow start again the deposition of subsequent thin film afterwards, the film obtaining is like this more even, dielectric constant is lower, and is not subject to the impact of liquid source flux controller stability, has improved device stability.
Particularly, Fig. 1 schematically shows the flow chart of the film build method of low dielectric constant films according to the preferred embodiment of the invention.
As shown in Figure 1, with the example that forms of the ground floor of 40 Nanometer Copper interconnection processes and second layer interconnecting metal, the film build method of low dielectric constant films comprises according to the preferred embodiment of the invention:
First step S1: form first layer metal layer 1;
First layer metal layer 1 includes but not limited to the conventional interconnection line metals of integrated circuit such as tungsten, copper, aluminium.
Particularly, take metallic copper as example, can be first by physical gas-phase deposition (PVD) deposited barrier layer (being generally Ta and TaN), then by the inculating crystal layer 50-150A of copper deposited by physical vapour deposition (PVD), then by plating, form first layer metal copper 5000-7000A, then by cmp, copper layer is polished, thickness is reduced to 1200A-2000A;
Second step S2: the etching barrier layer 2 of growing on first layer metal layer 1;
Particularly, on first layer metal layer, by plasma enhanced chemical vapor deposition technique (PECVD) growth etching barrier layer (being generally silicon nitride or carborundum or carbonitride of silicium), its thickness is preferably 200-700A;
Third step S3: (preferably, the carbon dope film that contains pore-foaming agent, as shown in Figure 2), introduces liquid source stabilization process more than two steps to the low dielectric constant films 3 of growing on etching barrier layer 2 when deposit film;
Particularly, the carbon dope film (equipment of use can be the PECVD equipment of the ProducerGT model of AMAT company) that can be grown and be contained pore-foaming agent by the method for PECVD on etching barrier layer, can carry out following step:
First silicon slice loading is entered to reaction chamber, then start to flow into the methyl di-ethyl siloxane m-DEOS of 200-700gm, and carrier gas-helium 1000-2000sccm of these main gases, the time is 10-30s; This processing procedure is not opened radio frequency.
And then the carbon dope film that growth regulation one deck does not contain pore-foaming agent is as resilient coating, main process can be the methyl di-ethyl siloxane m-DEOS that flows into 200-700gm, and liquid source m-DEOS carrier gas-helium 1000-2000sccm, the oxygen of 400-600sccm, open radio frequency, the radio frequency is here high frequency 13.56MHZ, power be 400W to 700W, the time is 1-3s; The silicon source presoma and the oxygen helium that in this step, only contain methyl key participate in reaction, and pore-foaming agent does not now flow into reaction cavity.After this, preferably can after closing the liquid source reactant that flows into cavity, continue to open radio frequency, the time is between 2-4s; Thereby realize the purification of residue.
And then close radio frequency, pass into 2000gm to the methyl di-ethyl siloxane m-DEOS of 4000gm, the pore-foaming agent C10H16 of 800-2000gm, and the helium of the carrier gas-1000-2000sccm of these main liquid source pre-reaction materials, the oxygen of 150-250sccm, time is 12-20s, makes liquid source reactant flow reach set point stable.
And then open radio frequency, the radio frequency is here high frequency 13.56MHZ, power is that 650W is to 1000W, pass into 2000gm to the methyl di-ethyl siloxane m-DEOS of 4000gm, the pore-foaming agent C10H16 of 800-2000gm, and carrier gas-helium 1000-2000sccm of these main liquid source pre-reaction materials, the oxygen of 150-250sccm, the time regulates according to the thickness requirement of deposition;
After having deposited, add the processes such as the interior gas of cavity pumps, silicon chip is set out to reaction cavity, complete the deposition of film;
The temperature of all above-mentioned growth courses be 240 degree between 300 degree, the pressure of equipment cavity is that 5 holders are between 10 holders;
The 4th step S4: low dielectric constant films is carried out to ultraviolet curing;
Film is carried out to ultraviolet curing and can comprise that film is carried out to ultraviolet ray to be irradiated, the time and intensity that ultraviolet ray is irradiated depends on the thickness of the film of deposition, the preferably time that ultraviolet ray is irradiated is 20s-500s, according to the difference of thickness, do corresponding adjustment, temperature preferably at 300 degree between 480 degree.For example, the general film to 2500-5000A, irradiation time, between 150s-400s, makes residual predecessor complete reaction.
The 5th step S5: deposit mask and carry out chemical wet etching on low dielectric constant films.
For example, can be in the complete structure of UV treatment the hard mask of PECVD growth one deck (this programme adopt be silicon dioxide and titanium nitride) then spin coating photoresist carry out photoetching and etching forms damascene structure; Deposited barrier layer (being generally Ta and TaN), the inculating crystal layer of deposited copper, then forms second layer metal copper 4 (as shown in Figure 3) by plating.
In fact, the content of pore-foaming agent is directly connected to the electrical properties of dielectric film and hardness etc., when dielectric film pore-foaming agent content is higher, through ultraviolet irradiation, the density of film hole is higher, aperture is larger, and the dielectric constant obtaining is the end of compared with, contrary, pore-foaming agent content is during the end of compared with, the density of the hole of film is less, and aperture is less, and the dielectric constant obtaining is higher.The present invention is by introducing liquid source flux stabilization process more than two steps, can guarantee the growth quality of film resilient coating, can filter out again the impact that in film, liquid source predecessor causes from low to high, make subsequent deposition process more stable, the film pore-foaming agent content generating is higher, and the thin-film dielectric constant obtaining is lower.Meanwhile, owing to having filtered out liquid source flux uphill process, be not subject to the impact of liquid source flux controller stability, make technique more reliable and more stable.By this improvement, it is evident that the transition region thickness between resilient coating and low dielectric constant films reduces greatly most, for the film of 3000A left and right thickness, dielectric constant can reduce to 2.52 from 2.58.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the descriptions such as the term in specification " first ", " second ", " the 3rd " are only for distinguishing each assembly, element, step of specification etc., rather than for representing logical relation between each assembly, element, step or ordinal relation etc.
Be understandable that, although the present invention with preferred embodiment disclosure as above, yet above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (7)
1. a film build method for low dielectric constant films, is characterized in that comprising successively and carries out:
First step, is used to form first layer metal layer;
Second step, for the etching barrier layer of growing on first layer metal layer;
Third step for the low dielectric constant films of growing on etching barrier layer, is wherein introduced liquid source stabilization process more than two steps when growth low dielectric constant films;
The 4th step, for carrying out ultraviolet curing to low dielectric constant films;
The 5th step, for depositing mask and carrying out chemical wet etching on low dielectric constant films.
2. the film build method of low dielectric constant films according to claim 1, is characterized in that, low dielectric constant films is the carbon dope film that contains pore-foaming agent.
3. the film build method of low dielectric constant films according to claim 1 and 2, is characterized in that, described third step comprises:
The first step, carries out the first not good liquor source reactant stabilization process, wherein in the situation that not opening radio frequency, makes liquid source predecessor flow into reaction chamber with first flow;
Second step, in the situation that pore-foaming agent does not flow into reaction cavity and opens radio frequency, make the silicon source presoma and the oxygen helium that contain methyl key participate in reaction, thereby the carbon Si oxide that growth one deck does not contain pore-foaming agent is as resilient coating;
The 3rd step, carries out the second not good liquor source reactant stabilization process, wherein in the situation that not opening radio frequency, makes liquid source predecessor flow into reaction chamber with the second flow, and wherein the second flow is greater than first flow;
The 4th step, opens the radio frequency in reaction cavity, thus the low dielectric constant films that deposition contains pore-foaming agent.
4. the film build method of low dielectric constant films according to claim 3, is characterized in that, pore-foaming agent is the organic substance that comprises carbon and hydrogen, and the formation cavity of can dissociating and volatilize after ultraviolet ray is irradiated.
5. the film build method of low dielectric constant films according to claim 1 and 2, is characterized in that, first layer metal layer comprises a kind of in tungsten metal level, copper metal layer and aluminum metal layer.
6. the film build method of low dielectric constant films according to claim 1 and 2, is characterized in that, low dielectric constant films is carried out to ultraviolet curing and comprise that low dielectric constant films is carried out to ultraviolet ray to be irradiated.
7. the film build method of low dielectric constant films according to claim 6, it is characterized in that, it is 20s-500s that low dielectric constant films is carried out to the time that ultraviolet ray irradiates, to low dielectric constant films carry out temperature that ultraviolet ray irradiates at 300 degree between 480 degree.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104190180A (en) * | 2014-07-31 | 2014-12-10 | 上海华力微电子有限公司 | Gas filtering method |
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| US20080171431A1 (en) * | 2007-01-17 | 2008-07-17 | Chen-Hua Yu | Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio |
| CN101226922A (en) * | 2006-01-20 | 2008-07-23 | 国际商业机器公司 | SICOH dielectric and its manufacturing method |
| WO2009009267A1 (en) * | 2007-07-12 | 2009-01-15 | Applied Materials, Inc. | Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition |
| CN103871963A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Filming method of low-dielectric-constant film |
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- 2014-05-08 CN CN201410193144.3A patent/CN103943561B/en active Active
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| CN101226922A (en) * | 2006-01-20 | 2008-07-23 | 国际商业机器公司 | SICOH dielectric and its manufacturing method |
| US20080171431A1 (en) * | 2007-01-17 | 2008-07-17 | Chen-Hua Yu | Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio |
| WO2009009267A1 (en) * | 2007-07-12 | 2009-01-15 | Applied Materials, Inc. | Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition |
| CN103871963A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Filming method of low-dielectric-constant film |
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| CN104190180A (en) * | 2014-07-31 | 2014-12-10 | 上海华力微电子有限公司 | Gas filtering method |
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