CN103972070A - Method for manufacturing gate oxide layer - Google Patents
Method for manufacturing gate oxide layer Download PDFInfo
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- CN103972070A CN103972070A CN201410163438.1A CN201410163438A CN103972070A CN 103972070 A CN103972070 A CN 103972070A CN 201410163438 A CN201410163438 A CN 201410163438A CN 103972070 A CN103972070 A CN 103972070A
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- gate oxide
- manufacture method
- temperature
- technique
- oxide layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
Abstract
The invention provides a method for manufacturing a gate oxide layer. The method includes the steps of providing a silicon substrate, carrying out the thermal oxidation technology on the silicon substrate to form a silicon dioxide gate oxide layer on the surface of the silicon substrate, carrying out nitrogen injection on the silicon dioxide gate oxide layer with the plasma nitridation technology to form a silicon oxynitride gate oxide layer, carrying out the high-temperature nitridation technology on the silicon oxynitride gate oxide layer to repair crystal lattice damage and form stable Si-N bonds, and carrying out the low-temperature oxidation technology on the silicon oxynitride gate oxide layer after high-temperature nitridation processing is carried out to repair an interface between SiO2 and Si. By means of the method for manufacturing the gate oxide layer, the gate oxide layer after the nitrogen injection is processed with the high-temperature nitridation technology, the Si-N bonds of the silicon oxynitride gate oxide layer are stable, nitrogen atoms on the surface of the silicon oxynitride gate oxide layer are prevented from being continuously volatilized or diffused, and therefore the content of nitrogen in the gate oxide layer is effectively improved and kept stable.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of manufacture method of gate oxide.
Background technology
In semiconductor fabrication, gate oxide is usually used as dielectric layer, and for realizing the electrical isolation between grid and substrate, the performance of gate oxide can directly affect and determine electrology characteristic and the reliability of semiconductor device conventionally.Therefore, the preparation technology of gate oxide is the committed step in semiconductor fabrication.
Because the characteristic size of semiconductor device continues to dwindle, the thickness of gate oxide is also more and more thinner.Along with the reduction of gate oxide thickness, electric leakage of the grid fails to be convened for lack of a quorum and increases with exponential form.On the other hand, between grid, gate oxide and silicon substrate, have the concentration gradient of impurity, along with the continuous reduction of gate oxide thickness, the impurity such as the boron mixing in grid can be from gate diffusions to gate oxide and in silicon substrate, this can affect the threshold voltage of device, thereby affects the performance of device.Therefore,, for slim gate oxide, how keeping low leakage current and high reliability is very important technical problem.
For this reason, conventionally carrying out nitrogen doping in the process of preparing gate oxide makes nitrogen Elements Diffusion enter SiO
2in gate oxide, make it to become fine and close SiON gate oxide.The gate oxide that mixes nitrogen element has relatively high dielectric constant, can effectively stop the boron diffusion from P+ polycrystalline, solve boron penetration problem, the a small amount of nitrogen-atoms that is simultaneously distributed in gate oxide and silicon substrate interface also can improve the characteristic at this interface, strengthen the reliability of gate oxide, reduce leakage current.
At present, the nitrogen that industry has three kinds of processes to realize gate oxide adulterates, to form SiON gate oxide.The first process is to pass into the nitrogenous gas such as NO in the growth course of gate oxide, directly mixes nitrogen in the growth course of gate oxide.The second process is to allow SiO after having grown
2gate oxide is containing N
2in the atmosphere of O, further anneal and mix nitrogen.The third process is to realize nitrogen doping by plasma, at SiO
2after finishing, growth of gate oxide layer allows SiO after having grown by pecvd nitride technology
2gate oxide mixes nitrogen.Wherein, the first process and the second process all belong to high temperature nitrogen doping, and the nitrogen concentration of element that mixes is lower and uniformity is wayward.The temperature of the third process is lower, and the nitrogen concentration of element mixing is higher, and nitrogen element is mainly distributed in the upper surface of gate oxide, away from the interface of gate oxide and silicon substrate, is the manufacture method of the gate oxide of current industry-wide adoption.
The specific embodiment that realizes nitrogen doping by plasma is as follows: first, by original position steam oxidation method (In-suit SteamGeneration is called for short ISSG), SiO grows on silicon substrate
2gate oxide; Then, by decoupled plasma nitridation (Decoupled Plasma Nitridation, be called for short DPN) to SiO
2nitrogen adulterates in gate oxide; Finally, adopt the stable SiO of injection of high-temperature annealing process (Post Nitridation Anneal is called for short PNA)
2nitrogen-atoms in gate oxide, and repair lattice damage.
But, in the technical process that realizes nitrogen doping by plasma, because the nitrogen-atoms injecting is mainly distributed in the upper surface of gate oxide, therefore follow-up high-temperature annealing process had both easily caused the volatilization of the nitrogen-atoms on gate oxide surface, made again the nitrogen-atoms in gate oxide obtain energy and continue diffusion.Visible, the SiON gate oxide that using plasma Nitriding Technology forms is also unstable, and follow-up high-temperature annealing process can change the nitrogen content in SiON gate oxide.
Therefore, how to solve the low or unsettled problem of nitrogen content of the nitrogen content of existing gate oxide and become the current technical problem of needing solution badly.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of gate oxide, to solve the low or unsettled problem of nitrogen content of nitrogen content that in prior art, gate oxide mixes.
For solving the problems of the technologies described above, the invention provides a kind of manufacture method of gate oxide, the manufacture method of described gate oxide comprises:
One silicon substrate is provided;
Described silicon substrate is carried out to thermal oxidation technology, to form silicon dioxide gate oxide on the surface of described silicon substrate;
Described silicon dioxide gate oxide using plasma nitriding process is carried out to nitrogen injection, to form silicon oxynitride gate oxide;
Adopt high-temperature ammonolysis technique to repair lattice damage and to form stable Si-N key to described silicon oxynitride gate oxide;
Adopt low temperature oxidation technology to repair SiO to high-temperature ammonolysis silicon oxynitride gate oxide after treatment
2interface between/Si.
Preferably, in the manufacture method of described gate oxide, described thermal oxidation technology comprises quick thermal treatment process and/or vertical furnace tube technique.
Preferably, in the manufacture method of described gate oxide, described quick thermal treatment process comprises original position steam oxidation technique and/or rapid thermal oxidation process.
Preferably, in the manufacture method of described gate oxide, described original position steam oxidation technique comprises with N
2o and H
2for the nitrous oxide original position steam oxidation technique of reacting gas and/or with O
2and H
2for the hydrogen original position steam oxidation technique of reacting gas.
Preferably, in the manufacture method of described gate oxide, described plasma nitridation process comprises the nitrogenation treatment technology of decoupled plasma nitridation process, remote plasma nitridation technique and/or vertical proliferation equipment.
Preferably, in the manufacture method of described gate oxide, the nitrogenous source that described vertical proliferation equipment adopts is NO, N
2o or NH
3in any one.
Preferably, in the manufacture method of described gate oxide, the process gas of described high-temperature ammonolysis process using comprises nitrogen and argon gas, and the temperature of described high-temperature ammonolysis technique is more than 1000 DEG C.
Preferably, in the manufacture method of described gate oxide, the temperature range of described high-temperature ammonolysis technique is between 1000 DEG C to 1100 DEG C.
Preferably, in the manufacture method of described gate oxide, the process gas that described low temperature oxidation technology adopts is the mist of pure oxygen or hydrogen and oxygen, and the temperature range of described low temperature oxidation technology is below 800 DEG C.
Preferably, in the manufacture method of described gate oxide, the temperature range of described low temperature oxidation technology is between 500 DEG C to 800 DEG C.
In the manufacture method of gate oxide provided by the invention, gate oxide after injecting by high-temperature ammonolysis PROCESS FOR TREATMENT nitrogen, make the Si-N key of described silicon oxynitride gate oxide more stable, avoid the nitrogen-atoms on described silicon oxynitride gate oxide surface to continue volatilization or diffusion, thereby effectively improve the nitrogen content in gate oxide and make it keep stable.
Brief description of the drawings
Fig. 1 is the process chart of the manufacture method of the gate oxide of the embodiment of the present invention.
Embodiment
The manufacture method of gate oxide the present invention being proposed below in conjunction with the drawings and specific embodiments is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1, the process chart of the manufacture method of its gate oxide that is the embodiment of the present invention.As shown in Figure 1, the manufacture method of described gate oxide comprises:
Step S10 a: silicon substrate is provided;
Step S11: described silicon substrate is carried out to thermal oxidation technology, to form silicon dioxide gate oxide on the surface of described silicon substrate;
Step S12: described silicon dioxide gate oxide using plasma nitriding process is carried out to nitrogen injection, to form silicon oxynitride gate oxide;
Step S13: adopt high-temperature ammonolysis technique to repair lattice damage and to form stable Si-N key to described silicon oxynitride gate oxide;
Step S14: to adopting low temperature oxidation technology to repair SiO through high-temperature ammonolysis silicon oxynitride gate oxide after treatment
2interface between/Si.
Concrete, first, provide a silicon substrate, and described silicon substrate is carried out to thermal oxidation technology, to form silicon dioxide gate oxide on the surface of described silicon substrate.
In described step S11, the thermal oxidation technology that described silicon substrate is carried out generally includes rapid thermal treatment (Rapid Thermal Process is called for short RTP) technique and/or vertical furnace tube (Furnace) technique.Further, described quick thermal treatment process comprises original position steam oxidation (In-suit SteamGeneration is called for short ISSG) technique and/or rapid thermal oxidation (Rapid Thermal Oxidation is called for short RTO) technique.Wherein, described original position steam oxidation technique comprises with N
2o and H
2for the nitrous oxide original position steam oxidation technique of reacting gas and/or with O
2and H
2for the hydrogen original position steam oxidation technique of reacting gas.
After silicon substrate is provided, on the surface of described silicon substrate, form silicon dioxide gate oxide (SiO by above-mentioned thermal oxidation technology
2).Afterwards, by plasma nitridation process, nitrogen element is injected to the surface of silicon dioxide gate oxide, make silicon dioxide gate oxide (SiO
2) in partial oxygen atom (O) replaced by nitrogen-atoms (N), nitrogen-atoms (N) forms Si-N key with silicon atom (Si) combination, thereby on the surface of described silicon substrate, forms silicon oxynitride gate oxide (SiON).
In described step S12, the plasma nitridation process that described silicon dioxide gate oxide is carried out comprises decoupled plasma nitridation (Decoupled Plasma Nitridation, be called for short DPN) nitrogenation treatment technology of technique, remote plasma nitridation (RemotePlasma Nitridation is called for short RPN) technique and/or vertical proliferation equipment.Wherein, the nitrogenous source that described vertical proliferation equipment adopts is generally NO, N
2o or NH
3in any one.
After plasma nitridation process completes, adopt high-temperature ammonolysis technique to repair lattice damage and to form stable Si-N key to described silicon oxynitride gate oxide.After nitrogen injects, mix nitrogen-atoms (N) in gate oxide unstable.In order to prevent that nitrogen-atoms (N) from volatilizing or continuing diffusion in follow-up high-temperature annealing process, described silicon oxynitride gate oxide is carried out to high-temperature ammonolysis technique, described high-temperature ammonolysis technique not only can be repaired lattice, and, can form more stable Si-N key, avoid nitrogen-atoms in nitrogen-atoms volatilization or the silicon oxynitride gate oxide on silicon oxynitride gate oxide surface to SiO
2/ Si interfacial diffusion.Thus, improved the nitrogen content of gate oxide, nitrogen content can keep stable simultaneously.
In described step S13, the process gas adopting in described high-temperature ammonolysis technique comprises nitrogen (N
2) and argon gas (Ar), the temperature of described high-temperature ammonolysis technique is more than 1000 DEG C.Preferably, the temperature range of described high-temperature ammonolysis technique is between 1000 DEG C to 1100 DEG C, and for example temperature of described high-temperature ammonolysis technique is 1020 DEG C, 1050 DEG C or 1080 DEG C.
Finally, to carrying out low temperature oxidation technology through high-temperature ammonolysis silicon oxynitride gate oxide after treatment.Under uniform temperature condition, silicon oxynitride gate oxide is carried out to oxidation processes, to repair SiO
2interface between/Si.Wherein, the temperature of low temperature oxidation technology is lower than the temperature of described high-temperature ammonolysis technique.
In described step S14, the process gas that described low temperature oxidation technology adopts is pure oxygen (O
2) or hydrogen (H
2) and oxygen (O
2) mist, the temperature of described low temperature oxidation technology is below 800 DEG C.Preferably, the temperature range of described low temperature oxidation technology is between 500 DEG C to 800 DEG C, and the temperature of for example described low temperature oxidation technology is 550 DEG C, 600 DEG C, 650 DEG C, 700 DEG C or 750 DEG C.
In the manufacture method of the gate oxide providing in the embodiment of the present invention, after silicon oxynitride growth of gate oxide layer completes, do not adopt single high-temperature annealing process, but adopt successively high-temperature ammonolysis technique and low temperature oxidation technology to process silicon oxynitride gate oxide, make it have higher and stable nitrogen content.Experiment showed, that the silicon oxynitride gate oxide that adopts the manufacture method of the gate oxide that provides of the embodiment of the present invention to form not only has stable nitrogen content, and nitrogen content is than high 30% left and right of traditional nitrogen doping process.
To sum up, in the manufacture method of the gate oxide providing in the embodiment of the present invention, by plasma nitridation process, gate oxide is carried out to nitrogen injection, nitrogen first carries out high-temperature ammonolysis PROCESS FOR TREATMENT to repair lattice and to become more stable Si-N key to it after injecting, then carries out low temperature oxidation technology processing to repair SiO
2/ Si interface, has improved thus the nitrogen content in gate oxide and has made nitrogen content keep stable, and then improved the electric property of semiconductor device.
Foregoing description is only the description to preferred embodiment of the present invention, the not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, all belong to the protection range of claims.
Claims (10)
1. a manufacture method for gate oxide, is characterized in that, comprising:
One silicon substrate is provided;
Described silicon substrate is carried out to thermal oxidation technology, to form silicon dioxide gate oxide on the surface of described silicon substrate;
Described silicon dioxide gate oxide using plasma nitriding process is carried out to nitrogen injection, to form silicon oxynitride gate oxide;
Adopt high-temperature ammonolysis technique to repair lattice damage and to form stable Si-N key to described silicon oxynitride gate oxide;
Adopt low temperature oxidation technology to repair SiO to high-temperature ammonolysis silicon oxynitride gate oxide after treatment
2interface between/Si.
2. the manufacture method of gate oxide as claimed in claim 1, is characterized in that, described thermal oxidation technology comprises quick thermal treatment process and/or vertical furnace tube technique.
3. the manufacture method of gate oxide as claimed in claim 2, is characterized in that, described quick thermal treatment process comprises original position steam oxidation technique and/or rapid thermal oxidation process.
4. the manufacture method of gate oxide as claimed in claim 3, is characterized in that, described original position steam oxidation technique comprises with N
2o and H
2for the nitrous oxide original position steam oxidation technique of reacting gas and/or with O
2and H
2for the hydrogen original position steam oxidation technique of reacting gas.
5. the manufacture method of gate oxide as claimed in claim 1, is characterized in that, described plasma nitridation process comprises the nitrogenation treatment technology of decoupled plasma nitridation process, remote plasma nitridation technique and/or vertical proliferation equipment.
6. the manufacture method of gate oxide as claimed in claim 5, is characterized in that, the nitrogenous source that described vertical proliferation equipment adopts is NO, N
2o or NH
3in any one.
7. the manufacture method of gate oxide as claimed in claim 1, is characterized in that, the process gas of described high-temperature ammonolysis process using comprises nitrogen and argon gas, and the temperature of described high-temperature ammonolysis technique is more than 1000 DEG C.
8. the manufacture method of gate oxide as claimed in claim 1, is characterized in that, the temperature range of described high-temperature ammonolysis technique is between 1000 DEG C to 1100 DEG C.
9. the manufacture method of gate oxide as claimed in claim 1, is characterized in that, the process gas that described low temperature oxidation technology adopts is the mist of pure oxygen or hydrogen and oxygen, and the temperature range of described low temperature oxidation technology is below 800 DEG C.
10. the manufacture method of gate oxide as claimed in claim 1, is characterized in that, the temperature range of described low temperature oxidation technology is between 500 DEG C to 800 DEG C.
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| CN201410163438.1A CN103972070A (en) | 2014-04-22 | 2014-04-22 | Method for manufacturing gate oxide layer |
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| CN201410163438.1A CN103972070A (en) | 2014-04-22 | 2014-04-22 | Method for manufacturing gate oxide layer |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201109A (en) * | 2014-09-02 | 2014-12-10 | 上海华力微电子有限公司 | Method for preparing a plasma nitrided gate dielectric layer |
| CN104392948A (en) * | 2014-11-25 | 2015-03-04 | 上海华力微电子有限公司 | Device and method for preparing nitride grid dielectric layer |
| CN104465355A (en) * | 2014-12-24 | 2015-03-25 | 上海华虹宏力半导体制造有限公司 | Technological method for gate oxide layer |
| CN105575785A (en) * | 2014-10-09 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Method for forming gate structure |
| CN108766870A (en) * | 2018-05-31 | 2018-11-06 | 武汉华星光电技术有限公司 | The production method and LTPS TFT substrates of LTPS TFT substrates |
| CN110634803A (en) * | 2019-09-06 | 2019-12-31 | 上海华力集成电路制造有限公司 | Method for repairing gate dielectric layer interface state defect in CMOS device and gate dielectric layer |
| US20210317559A1 (en) * | 2020-04-14 | 2021-10-14 | X-Fab France SAS | In-situ steam generated oxynitride |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201109A (en) * | 2014-09-02 | 2014-12-10 | 上海华力微电子有限公司 | Method for preparing a plasma nitrided gate dielectric layer |
| CN104201109B (en) * | 2014-09-02 | 2017-02-15 | 上海华力微电子有限公司 | Method for preparing a plasma nitrided gate dielectric layer |
| CN105575785A (en) * | 2014-10-09 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Method for forming gate structure |
| CN104392948A (en) * | 2014-11-25 | 2015-03-04 | 上海华力微电子有限公司 | Device and method for preparing nitride grid dielectric layer |
| CN104465355A (en) * | 2014-12-24 | 2015-03-25 | 上海华虹宏力半导体制造有限公司 | Technological method for gate oxide layer |
| CN108766870A (en) * | 2018-05-31 | 2018-11-06 | 武汉华星光电技术有限公司 | The production method and LTPS TFT substrates of LTPS TFT substrates |
| WO2019227790A1 (en) * | 2018-05-31 | 2019-12-05 | 武汉华星光电技术有限公司 | Method for manufacturing ltps tft substrate and ltps tft substrate |
| US11088183B2 (en) | 2018-05-31 | 2021-08-10 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Manufacturing method of low temperature poly-silicon (LTPS) thin film transistor (TFT) substrate and the LTPS TFT substrate |
| CN110634803A (en) * | 2019-09-06 | 2019-12-31 | 上海华力集成电路制造有限公司 | Method for repairing gate dielectric layer interface state defect in CMOS device and gate dielectric layer |
| CN110634803B (en) * | 2019-09-06 | 2022-11-29 | 上海华力集成电路制造有限公司 | Method for repairing gate dielectric layer interface state defect in CMOS device and gate dielectric layer |
| US20210317559A1 (en) * | 2020-04-14 | 2021-10-14 | X-Fab France SAS | In-situ steam generated oxynitride |
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Application publication date: 20140806 |