CN103996714A - N type silicon carbide longitudinal metal oxide semiconductor tube - Google Patents
N type silicon carbide longitudinal metal oxide semiconductor tube Download PDFInfo
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- CN103996714A CN103996714A CN201410195822.XA CN201410195822A CN103996714A CN 103996714 A CN103996714 A CN 103996714A CN 201410195822 A CN201410195822 A CN 201410195822A CN 103996714 A CN103996714 A CN 103996714A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 22
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 22
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 229920005591 polysilicon Polymers 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 5
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- 229910001120 nichrome Inorganic materials 0.000 claims description 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 4
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000011084 recovery Methods 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
Abstract
An N type silicon carbide longitudinal metal oxide semiconductor tube comprises an N type substrate, one side of the N type substrate is connected with drain electrode metal, the other side of the N type substrate is provided with an N type drift region, a P type base region is arranged in the N type drift region, a P type body contact region and an N type source region are arranged in the P type base region, the surface of the N type drift region is provided with a gate oxide layer, the boundary of the gate oxide layer respectively extends towards the two sides and stops at the boundary of the N type source region, the surface of the gate oxide layer is provided with a polysilicon gate, the polysilicon gate and the N type source region are provided with field oxide layers, the surface of the polysilicon gate is connected with grid metal, and the N type source region and the P type body contact region are connected with active electrode metal. The N type silicon carbide longitudinal metal oxide semiconductor tube is characterized in that a metal layer is embedded in the middle of the P type body contact region and the P type base region. The N type silicon carbide longitudinal metal oxide semiconductor tube has the advantages that on the premise that the device puncture voltage and other parameters are basically not changed, the reverse recovery time of the device can be obviously shortened, and the latching preventing capability of the device is improved.
Description
Technical field
The present invention relates generally to field of high voltage power semiconductor devices, specifically, a kind of N-type carborundum longitudinal metal oxide semiconductor tube, the application that is applicable to the extreme environments such as the high temperature such as space flight, aviation, oil exploration, nuclear energy, radar and communications, high frequency, high-power, intense radiation and deposits.
Background technology
Carborundum is one of semiconductor material with wide forbidden band developing rapidly in recent ten years.Compared with Semiconducting Silicon Materials, germanium and the GaAs of extensive use, carborundum has the advantages such as broad stopband, high breakdown electric field, high carrier saturation drift velocity, high heat conductance, high power density, is the ideal material of preparing high temperature, high-power, high-frequency element.U.S., Europe, Deng developed country have solved the problem such as silicon carbide monocrystal growth and homoepitaxy film substantially at present, at large power semiconductor device field dominate.It is reported, in January, 2014, first Chinese was realized the batch production of carborundum high power device, made breakthroughs at the semiconductor applications of taking as the leading factor with U.S., Europe, day.
Power metal-oxide semiconductor pipe is a kind of desirable switching device and linear amplifier part, and it has, and switching speed is fast, fidelity is high, frequency response is good, thermal stability advantages of higher, occupies very consequence in power device.In traditional silicon based metal oxide semiconductor tube, its current delivery limited ability is in reducing conducting resistance and improving in this pair of contradictory relation of puncture voltage, must adopt the drift region of high resistivity for obtaining higher puncture voltage, therefore limit its application in high-tension circuit field.And carbofrax material is owing to having larger critical breakdown electric field, withstand voltage identical with area in the situation that, the conducting resistance of silicone carbide metal oxide semiconductor pipe is than extremely when young two orders of magnitude of silica-based MOS (metal-oxide-semiconductor) transistor, thereby in high-voltage applications field, silicone carbide metal oxide semiconductor pipe has fairly obvious advantage.
Carborundum longitudinal metal oxide semiconductor tube has the conductive path perpendicular to chip surface, and its raceway groove is short, and sectional area is large, and as monopole type device, carborundum longitudinal metal oxide semiconductor tube has good performance aspect high frequency, high-power applications.But in practical application, the switching speed of carborundum longitudinal metal oxide semiconductor tube is limited to the body diode of device inside parasitism, its reason is to have minority carrier lifetime and oppositely recover the problems such as delay as the PN junction of bipolar device, the electric current that causes flowing through device can not be with the fast reaction of MOS (metal-oxide-semiconductor) transistor switch, for solving this puzzlement, common way is that this has increased volume and the cost of device at the fast Schottky diode that recovers of switching tube parallel connection outside one.When device of the present invention is applied in system, oppositely recover even if drain terminal Schottky diode not in parallel in source also can be realized faster, thereby effectively reduced the hardware cost of system.
Summary of the invention
The invention provides a kind of N-type carborundum longitudinal metal oxide semiconductor tube.
The present invention adopts following technical scheme: a kind of N-type carborundum longitudinal metal oxide semiconductor tube, comprise: N-type substrate, a side at N-type substrate is connected with drain metal, be provided with N-type drift region at the opposite side of N-type substrate, in N-type drift region, be provided with P type base, in P type base, be provided with HeNXing source region, P type body contact zone, the border in N-type source region is extended and is terminated in respectively on the border that is provided with gate oxide and gate oxide on the surface of N-type drift region to both sides, surface at gate oxide is provided with polysilicon gate, on polysilicon gate and N-type source region, be provided with field oxide, surface at polysilicon gate is connected with gate metal, be connected with source metal in N-type source region and P type body contact zone, in described P type body contact zone and P type base, be provided with metal level, one end of metal level is passed P type body contact zone and is connected with source metal, the other end of metal level is through P type base and enter N-type drift region.
compared with prior art, tool of the present invention has the following advantages:
(1), device of the present invention is embedded with a metal level 12 in the middle of P type body contact zone 4 and P type base 3, and metal level 12 upper surfaces are connected with source metal 10, lower surface is through P type body contact zone 4 and P type base 3 and extend into 2 inside, N-type drift region, forms Schottky contacts with N-type drift region 2.When the body diode of device is during in forward conduction state, because two ends exist schottky junction, and its Built-in potential is far below the forward voltage drop of device body diode, so the most electronics in drain metal 11 flow to source metal 10 via N-type drift region 2 and metal level 12 and form forward current, only have small part charge carrier to be collected by source electrode by body diode, there is not the accumulation of minority carrier in this process, therefore in the time that body diode forwards reverse cut-off to from forward conduction suddenly, its reverse recovery time is very short, similar with Schottky diode.Accompanying drawing 3 is for adopting the device of structure of the present invention and the reverse recovery characteristic curve comparison figure of conventional device, and structure devices of the present invention is compared with conventional device as seen from the figure, and all obtained obvious reduction with the reverse peak current that recovers reverse recovery time.
(2), benefit of the present invention is that embedded metal layer 12 has also promoted the anti-breech lock ability of device, and then improved the reliability of device, extended the useful life of device.Accompanying drawing 4 is that the device of two kinds of structures is along the Electric Field Distribution comparison diagram of P type base bottom transverse tangent plane direction, the introducing of metal level 12 as shown in the figure, make the position of the inner peak value electric field of semiconductor and ionization by collision point of maximum intensity move on to the bottom of metal level 12 from bottom, P type base, therefore metal level 12 bottoms first puncture than bottom, P type base, and in the time there is avalanche breakdown, the minority carrier hole major part that ionization by collision produces is taken away by source metal by metal level 12, only have little part to be collected by source metal by P type base, cause parasitic triode to be difficult for opening, so the anti-breech lock ability of device is obviously strengthened.
(3), benefit of the present invention is to adopt device overall breakdown characteristics of device compared with conventional device of structure of the present invention substantially to remain unchanged.Accompanying drawing 5 is for adopting the desirable breakdown characteristics comparison diagram of structure devices of the present invention and conventional device, as shown in the figure, can cause the desirable breakdown voltage of device slightly to reduce although introduce metal level 12, but consider floating empty field limiting ring, the terminal structures such as field plate also can lose a part of puncture voltage of device, and loss amount is in 20% left and right of desirable puncture voltage, and adopt structure of the present invention very little on the amplitude that affects of the desirable puncture voltage of device, thereby almost negligible on the impact of device entirety puncture voltage, therefore the device overall breakdown characteristics of device compared with original structure that can say employing structure of the present invention is substantially constant.
(4), the manufacture of device of the present invention and existing technique completely compatible, and manufacture craft is also very simple, the flow process that only need increase by a step on the basis of manufacturing conventional structure technological process and make metal level 12.
Brief description of the drawings
Fig. 1 is the device architecture profile of the N-type carborundum longitudinal metal oxide semiconductor tube of conventional structure.
Fig. 2 is the device architecture profile that adopts the N-type carborundum longitudinal metal oxide semiconductor tube after the present invention improves.
Fig. 3 adopts the device of structure of the present invention and the reverse recovery characteristic curve comparison figure of conventional device.Can find out and adopt the device of structure of the present invention compared with conventional device, had obvious reduction with the reverse peak current that recovers reverse recovery time.
Fig. 4 adopts the device of structure of the present invention and the conventional device Electric Field Distribution comparison diagram along P type base bottom transverse tangent plane direction.Can find out and adopt device P type base electric field compared with conventional device of structure of the present invention obviously to reduce, electric field point of maximum intensity is transferred to embedded metal layer bottom, in the time there is avalanche breakdown, most of charge carrier can flow away by embedded metal layer instead of body diode, cause parasitic transistor be difficult for open, the anti-breech lock ability of device be improved significantly.
Fig. 5 is the comparison diagram that adopts the device of structure of the present invention and the desirable breakdown characteristics of conventional device.Can find out and adopt the device of structure of the present invention and the breakdown characteristics of conventional device to be more or less the same.
Fig. 6 is the specific implementation process of device of the present invention.
Embodiment
Below in conjunction with accompanying drawing 2 and Fig. 6, the present invention is elaborated, a kind of N-type carborundum longitudinal metal oxide semiconductor tube, comprise: N-type substrate 1, a side at N-type substrate 1 is connected with drain metal 11, be provided with N-type drift region 2 at the opposite side of N-type substrate 1, in N-type drift region 2, be provided with P type base 3, in P type base 3, be provided with P type body contact zone 4 and N-type source region 5, the border in N-type source region 5 is extended and is terminated in respectively on the border that is provided with gate oxide 6 and gate oxide 6 on the surface of N-type drift region 2 to both sides, be provided with polysilicon gate 7 on the surface of gate oxide 6, on polysilicon gate 7 and N-type source region 5, be provided with field oxide 8, be connected with gate metal 9 on the surface of polysilicon gate 7, be connected with source metal 10 in N-type source region 5 and P type body contact zone 4, it is characterized in that, in described P type body contact zone 4 and P type base 3, be provided with metal level 12, one end of metal level 12 is passed P type body contact zone 4 and is connected with source metal 10, the other end of metal level 12 is through P type base 3 and enter N-type drift region 2.
The degree of depth that described metal level 12 stretches into 2 inside, N-type drift region is 0 ~ 0.3 μ m.
The width of described metal level 12 is 1/3rd to 1/2nd of P type body contact zone 4 width.
The material of described metal level 12 is nichrome or tungsten-titanium alloy.
the present invention adopts with the following method and prepares:
The first step, in superficial growth one deck N-type epitaxial loayer drift region 2 of N-type substrate 1, as shown in Fig. 6 Step1.
Second step forms P type base 3 by boron Implantation high annealing, as shown in Fig. 6 Step2 in N-type drift region 2.
The 3rd step forms P type body contact zone 4 by Al ion implantation high annealing, as shown in Fig. 6 Step3 in P type base 3.
The 4th step forms N-type source region 5 by nitrogen Implantation high annealing, as shown in Fig. 6 Step4 in P type base 3.
The 5th step, growth gate oxide 6, then depositing polysilicon, etch polysilicon gate 7, as shown in Fig. 6 Step5.
The 6th step, at device surface deposit one deck sacrificial oxide layer, then in P type base 3, P type body contact zone 4 cores etch the groove for deposited metal, and this groove extend into 2 inside, drift region, as shown in Fig. 6 Step6.
The 7th step, deposit nichrome or tungsten-titanium alloy form embedded metal layer, as shown in Fig. 6 Step7.
The 8th step, etches away unnecessary nichrome or tungsten-titanium alloy, at the thicker field oxide of surface deposition one deck, as shown in Fig. 6 Step8.
The 9th step, depositing metal behind etching electrode contact district, then etching metal extraction electrode, as shown in Fig. 6 Step9.
Claims (4)
1. a N-type carborundum longitudinal metal oxide semiconductor tube, comprise: N-type substrate (1), be connected with drain metal (11) in a side of N-type substrate (1), be provided with N-type drift region (2) at the opposite side of N-type substrate (1), in N-type drift region (2), be provided with P type base (3), in P type base (3), be provided with P type body contact zone (4) and N-type source region (5), the border of N-type source region (5) is extended and is terminated in respectively on the border that is provided with gate oxide (6) and gate oxide (6) on the surface of N-type drift region (2) to both sides, be provided with polysilicon gate (7) on the surface of gate oxide (6), on polysilicon gate (7) and N-type source region (5), be provided with field oxide (8), be connected with gate metal (9) on the surface of polysilicon gate (7), be connected with source metal (10) in N-type source region (5) and P type body contact zone (4), it is characterized in that, in described P type body contact zone (4) and P type base (3), be provided with metal level (12), one end of metal level (12) is passed P type body contact zone (4) and is connected with source metal (10), the other end of metal level (12) is through P type base (3) and enter N-type drift region (2).
2. N-type carborundum longitudinal metal oxide semiconductor tube according to claim 1, is characterized in that it is 0 ~ 0.3 μ m that described metal level (12) stretches into the inner degree of depth in N-type drift region (2).
3. N-type carborundum longitudinal metal oxide semiconductor tube according to claim 1, the width that it is characterized in that described metal level (12) is 1/3rd to 1/2nd of P type body contact zone (4) width.
4. N-type carborundum longitudinal metal oxide semiconductor tube according to claim 1, the material that it is characterized in that described metal level (12) is nichrome or tungsten-titanium alloy.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410195822.XA CN103996714A (en) | 2014-05-09 | 2014-05-09 | N type silicon carbide longitudinal metal oxide semiconductor tube |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410195822.XA CN103996714A (en) | 2014-05-09 | 2014-05-09 | N type silicon carbide longitudinal metal oxide semiconductor tube |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037628A (en) * | 1997-06-30 | 2000-03-14 | Intersil Corporation | Semiconductor structures with trench contacts |
| US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
| CN101385148A (en) * | 2006-03-10 | 2009-03-11 | 万国半导体股份有限公司 | Shielded gate trench (sgt) mosfet cells implemented with a schottky source contact |
| CN102169896A (en) * | 2010-02-26 | 2011-08-31 | 苏州东微半导体有限公司 | Manufacturing method of groove-type power MOS (Metal Oxide Semiconductor) transistor |
| CN102214603A (en) * | 2010-04-06 | 2011-10-12 | 科轩微电子股份有限公司 | Power semiconductor structure with schottky diode and manufacturing method thereof |
| CN202394977U (en) * | 2010-10-29 | 2012-08-22 | 松下电器产业株式会社 | Semiconductor element and semiconductor device |
| CN102822977A (en) * | 2010-03-30 | 2012-12-12 | 罗姆股份有限公司 | Semiconductor device |
-
2014
- 2014-05-09 CN CN201410195822.XA patent/CN103996714A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037628A (en) * | 1997-06-30 | 2000-03-14 | Intersil Corporation | Semiconductor structures with trench contacts |
| US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
| CN101385148A (en) * | 2006-03-10 | 2009-03-11 | 万国半导体股份有限公司 | Shielded gate trench (sgt) mosfet cells implemented with a schottky source contact |
| CN102169896A (en) * | 2010-02-26 | 2011-08-31 | 苏州东微半导体有限公司 | Manufacturing method of groove-type power MOS (Metal Oxide Semiconductor) transistor |
| CN102822977A (en) * | 2010-03-30 | 2012-12-12 | 罗姆股份有限公司 | Semiconductor device |
| CN102214603A (en) * | 2010-04-06 | 2011-10-12 | 科轩微电子股份有限公司 | Power semiconductor structure with schottky diode and manufacturing method thereof |
| CN202394977U (en) * | 2010-10-29 | 2012-08-22 | 松下电器产业株式会社 | Semiconductor element and semiconductor device |
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