CN104045049A - Processing method of high-precision accelerometer based on silicon layer transfer (SOLT) technology - Google Patents
Processing method of high-precision accelerometer based on silicon layer transfer (SOLT) technology Download PDFInfo
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Abstract
The invention discloses a processing method of a high-precision accelerometer based on a silicon layer transfer (SOLT) technology. The accelerometer includes, in a top-to-bottom successively connecting manner, an upper electrode plate, a movable silicon sensitive structural part and a lower electrode plate. The processing method includes following steps: processing the upper electrode plate and the lower electrode plate by employing glass sheets or monocrystalline silicon circular sheets as substrates; processing the movable silicon sensitive structural part with a single device-layer SOI sheet being a substrate; connecting the single device-layer SOI sheet to the lower electrode plate in a bonding manner; removing a substrate layer and an oxygen-embedded layer from the SOI sheet; etching an original device layer of the SOI sheet to release the movable silicon sensitive structural part and connecting the movable silicon sensitive structural part to the upper electrode plate in the bonding manner. Through methods of transfer and bonding of silicon device layer, a differential-motion capacity sensitive element in a sandwich structure can be processed. Double-surface processing and structure releasing of the sensitive structural part are achieved. A defect that the size of a fixing and supporting structure in a sacrificial layer releasing technology is difficult to control accurately is overcome. Technology difficulty and manufacturing cost are reduced and a manufactured elastic beam-weight block structure has universality.
Description
Technical field
The present invention relates to microelectron-mechanical manufacture field, relate in particular to a kind of processing method of the high-precision accelerometer based on silicon layer transfer techniques.
Background technology
High sensitivity low noise micro-acceleration gauge is all widely used in fields such as inertial navigation, geology monitoring, space microgravity measurements.Mems accelerometer has been owing to having adopted silicon micromachining technique, has that cost is low, volume is little, be convenient to the advantages such as manufacture in batches, at low precision and medium accuracy accelerometer application dominate.But along with dwindling of MEMS acceleration volume, in traditional accelerometer and the problem such as inapparent thermal noise problem, stress problem, press-filming damping problem, because dimensional effect becomes remarkable.
In order to improve the signal to noise ratio of mems accelerometer, improve detection sensitivity, institution of higher learning both domestic and external and company have carried out useful exploration.Specifically comprise: by increasing sensitization capacitance substrate area, the means such as depth-to-width ratio that improve broach electric capacity increase the initial value of sensitization capacitance; Form in accelerometer by structural design can differential variation sensitization capacitance pair, to improve the capacitance sensitivity fields of accelerometer, and suppress common-mode noise; And employing Vacuum Package regulates press-filming damping and reduces the thermal noise of mems accelerometer.
1992, the people such as Eric Peeters developed the first holohedral symmetry differential capacitance type micro-acceleration gauge.This mems accelerometer has larger initial capacitance and can realize Differential Detection, its feature is to adopt for the first time the mode of girder construction from upper and lower side-by-side mounting mass, successfully suppress intersecting axle sensitivity, the sensitivity of accelerometer single shaft is improved, thereby reduction coupled noise, improves accuracy of detection.But aspect processing technology, Eric Peeters etc. adopt common monocrystalline silicon disk, by the thickness of dense boron diffusion etch stop control girder construction, thereby introduce larger stress, cause the hydraulic performance decline such as temperature characterisitic of accelerometer; In addition, in the processing technology of this accelerometer, there is the bonding operation of fragile silicon chip, thereby affected the yield rate of this accelerometer.
2000, the Najafi seminar of Univ Michigan-Ann Arbor USA adopts single chip single crystal silicon disk to make total silicon high-accuracy capacitor accelerometer, this accelerometer has adopted Two-layer Beam structure equally, there is full symmetrical configuration, realize the acceleration detection of micro-g magnitude, but this accelerometer adopts dense boron diffusion etch stop technique to make girder construction, thereby has introduced larger stress; And this arrangements of accelerometers fragility, is difficult to realize scribing encapsulation, and practicality is poor.
2007, the people such as the Reza of Georgia Tech adopted SOI monocrystalline silicon disk to make a kind of comb structure differential capacitance type acceleration meter.Thereby this accelerometer adopts device layer deep etching to form in conjunction with polysilicon trench backfill technology and dwindles capacitance gap between broach and improve initial capacitance value, and utilize the substrate (handle layer) of SOI sheet to form additional mass, to improve the susceptibility of accelerometer.But additional mass is only distributed in a side of comb structure in this structure, therefore the center of gravity of beam one mass block structure and and the support force action center of beam do not overlap, therefore, the non-sensitive axial acceleration of accelerometer is serious to coupling to sensitive axes.
The series of patents U.S.Pat.No.5484073 of 1/0 Sensors company of U.S. application; U.S.Pat.No.5652384; U.S.Pat.No. 5852242; U.S.Pat.No. be the successful scheme of High Accuracy Microcomputer tool accelerometer; but this scheme adopts two SOI sheets after deep etch to carry out silicon one silicon bonding; exist bonding risk high; be bonded to the problem that power is lower; and the problem of the sensitive structure reduced symmetry that in process, the process results inhomogeneities between sheet causes; in addition, this scheme is more difficult realizes non-sensitive axial effective overload protection.
Summary of the invention
The object of the invention is to, provide a kind of processing method of the high-precision accelerometer based on silicon layer transfer techniques (SOLT), at least one of to solve the problems of the technologies described above.
The invention provides a kind of processing method of the high-precision accelerometer based on silicon layer transfer techniques, described accelerometer comprises the electric pole plate connecting from top to down, the movable silicon construction package of spring beam-mass block structure, lower electrode plate.Described method comprises the steps: battery lead plate procedure of processing, adopts sheet glass or monocrystalline silicon disk as substrate, processes described electric pole plate and lower electrode plate; Silicon device layer transfer step: using single device layer SOI monocrystalline silicon disk as substrate, at device layer finished surface electrode and capacitance gap; Described SOI monocrystalline silicon disk is connected based on bonding mode with described lower electrode plate; Remove substrate layer and the oxygen buried layer of SOI monocrystalline silicon disk; Movable silicon sensitive structure part procedure of processing: at former SOI monocrystalline silicon disk device layer back side finished surface electrode and capacitance gap; Etching forms the movable silicon construction package of described spring beam-mass block structure; Bonding step: be connected based on bonding mode with described electric pole plate with the lower electrode plate of movable silicon construction package bonding described.
The processing method of above-mentioned accelerometer, preferred described silicon device layer transfer step comprises: device layer surface doping step: in device layer surface doping activation, doping type is with identical at described SOI monocrystalline silicon disk device layer doping type; Initial capacitance spacing and bonding region obtaining step erode away groove with silicon etchant on the device layer burnishing surface of described single device layer SOI monocrystalline silicon disk, obtain the initial capacitance spacing of sensitization capacitance and obtain bonding region simultaneously; Metal level growth step: at device layer surface doping, doping type is with identical at described SOI monocrystalline silicon disk device layer doping type; Device layer growing metal after doping, and photolithography patterning forms electrode pattern; Metallic layer graphic step: graphical described metal level, forms electrode pattern.; Device layer transfer step: the SOI monocrystalline silicon disk of described formation electrode pattern is connected in bonding mode with electric pole plate; Remove substrate step: from the SOI monocrystalline silicon disk being connected with electric pole plate described in the corrosion of the back side, remove substrate layer;
The silicon device layer transfer step of the processing method of above-mentioned accelerometer, preferably, in initial capacitance spacing and bonding region obtaining step, described silicon etchant is tetramethyl ammonium hydroxide solution.
The silicon device layer transfer step of the processing method of above-mentioned accelerometer, in preferred metal layers growth step, described metal level composition is chromium layer and gold layer, growing method is sputter;
The silicon device layer transfer step of the processing method of above-mentioned accelerometer, in the graphical step of preferred metal layers, described metallic layer graphic method is stripping technology.
The processing method of above-mentioned accelerometer, preferred described movable silicon sensitive structure part procedure of processing comprises: back side electric capacity spacing and bonding region obtaining step: erode away groove at the described SOI monocrystalline silicon disk device layer back side, obtain the initial capacitance spacing of sensitization capacitance and obtain bonding region simultaneously; Movable electrode metal level growth step: at device layer superficial growth metal level; Metallic layer graphic step: graphical described metal level, forms electrode pattern; Spring beam-mass block structure release steps: carry out vertical deep etching from the described SOI monocrystalline silicon disk device layer back side, break-through device layer, obtains spring beam and mass; Discharge spring beam-mass block structure, obtain the movable silicon construction package of described spring beam-mass block structure;
The movable silicon sensitive structure part procedure of processing of the processing method of above-mentioned accelerometer, preferably, in initial capacitance spacing and bonding region obtaining step, described silicon etchant is tetramethyl ammonium hydroxide solution.
The movable silicon sensitive structure part procedure of processing of the processing method of above-mentioned accelerometer, in preferred metal layers growth step, described metal level composition is chromium layer and gold layer, growing method is sputter;
The movable silicon sensitive structure part procedure of processing of the processing method of above-mentioned accelerometer, in the graphical step of preferred metal layers, described metallic layer graphic method is stripping technology.
The processing method of above-mentioned accelerometer, preferably, in described vertical deep etching step, described vertical deep etching is inductively coupled plasma etching.
The processing method of above-mentioned accelerometer, preferably, in the time adopting sheet glass as substrate, described upper, lower electrode plate is connected based on anode linkage mode with described movable silicon construction package; Described battery lead plate procedure of processing comprises: metal level growth step, forms metal level; Metallic layer graphic step: photoetching is graphical described metal level also, forms the detection-drive electrode of described battery lead plate, signal of telecommunication lead-out wire, vertical deep etching guard electrode and pressure welding electrode.
The battery lead plate procedure of processing of the processing method of above-mentioned accelerometer, in preferred metal layers growth step, described metal level composition is chromium layer and gold layer, growing method is sputter;
The battery lead plate procedure of processing of the processing method of above-mentioned accelerometer, in the graphical step of preferred metal layers, described metallic layer graphic method is etching process.
The processing method of above-mentioned accelerometer, preferably, in the time adopting monocrystalline silicon disk as substrate, described power-on and power-off pole plate is connected based on the silicon-silicon bond mode of closing with described movable silicon construction package; Described battery lead plate procedure of processing comprises: thermal oxide growth step forms oxidation insulating layer on monocrystalline silicon substrate by thermal oxide; Metal level growth step forms metal level on monocrystalline silicon disk; Metallic layer graphic step: photoetching is graphical described metal level also, forms the detection-drive electrode of described battery lead plate, signal of telecommunication lead-out wire, vertical deep etching guard electrode and pressure welding electrode.The graphical step of oxidation insulating layer, photoetching graphical described oxidation insulating layer, form bonding silicon face.
The battery lead plate procedure of processing of the processing method of above-mentioned accelerometer, in preferred metal layers growth step, described metal level composition is chromium layer and gold layer, growing method is sputter;
The battery lead plate procedure of processing of the processing method of above-mentioned accelerometer, in the graphical step of preferred metal layers, described metallic layer graphic method is etching process.
In prior art, tool of the present invention has the following advantages:
The first, the present invention adopts single device layer SOI monocrystalline silicon disk to prepare movable silicon sensitive structure part by silicon device layer transfer method.The method has overcome the fixed support structure size that adopts sacrifice layer release tech to bring and has been difficult to the shortcoming of accurately controlling, and has realized the precision control of sensitive structure.The method of preparing girder construction with respect to the dense boron diffusion etch stop of common employing, the method can not introduced under the prerequisite of stress, obtains the accurate girder construction of thickness, has improved the symmetry of the movable silicon construction package of spring beam-mass block structure.
Second, the present invention adopts a slice list device layer SOI monocrystalline silicon disk to complete the processing of movable silicon construction package, avoid the high temperature silicon-silicon bonding technology adopting to prepare movable silicon sensitive structure part, reduce technology difficulty, reduce high technology temperature, eliminated silicon-silicon bond and close the bonding stress problem of introducing.Compared with adopting two device layer SOI monocrystalline silicon disk technique, there is saving cost, reduce the feature of technology difficulty.
The 3rd, Elastic beam-mass block structure movable silicon sensitive structure part of the present invention has versatility, both can adopt glass electrode cover plate, also can adopt monocrystalline silicon electrode cover plate.
Brief description of the drawings:
Brief description of the drawings
The structural representation of the high-precision accelerometer based on silicon layer transfer techniques with symmetrical structure that Fig. 1 processes for the present invention;
In the high-precision accelerometer based on silicon layer transfer techniques with symmetrical structure that Fig. 2 processes for the present invention, the movable silicon sensitive structure part structural representation of beam～mass block structure;
Fig. 3 A is the beam one mass block structure movable silicon sensitive structure part process substrates of a kind of high-precision accelerometer based on silicon layer transfer techniques with symmetrical structure of the present invention, and this process substrates is single device layer SOI monocrystalline silicon disk;
Fig. 3 B is that the A-A of single device layer SOI monocrystalline silicon disk described in Fig. 3 A is to cross section view;
The flow chart of steps of the processing method of the high-precision accelerometer based on silicon layer transfer techniques with symmetrical structure that Fig. 4 processes for the present invention;
Fig. 5 (a)～Fig. 5 (l) is in the present invention, the main preparation process schematic diagram of movable silicon sensitive structure part of beam one mass block structure;
Figure 6 shows that the battery lead plate 100Ga on glass that the present invention processes;
Fig. 7 (a)～Fig. 7 (c) is the main preparation process of the vitreous electricity pole plate shown in Fig. 6;
The device finished product generalized section that Fig. 7 (d) is prepared for glass electrode cover plate
Figure 8 shows that the monocrystalline silicon electric pole plate 200Ga that the present invention processes;
Fig. 9 (a)～Fig. 9 (d) is the main preparation process schematic diagram of monocrystalline silicon electrode plate.
Device finished product generalized section prepared by Fig. 9 (e) monocrystalline silicon electrode cover plate
detailed description of the invention:
For making above-mentioned purpose of the present invention, feature and advantage can become apparent more, and below in conjunction with the drawings and the specific embodiments, the present invention is further detailed explanation.
If Fig. 1～3B is a kind of structure chart with high-precision accelerometer based on silicon layer transfer techniques, and the preparation method of the movable silicon sensitive structure part (spring beam-mass block structure) of accelerometer of the present invention.Figure 1 shows that the structural representation of accelerometer of the present invention (vitreous electricity pole plate scheme).As shown in Figure 1, accelerometer 100 has an electric lids 100Ga on glass, a glass bottom electrode cover plate 100Gb, a movable silicon construction package 100S.
Figure 2 shows that the structural representation of movable silicon sensitive structure part 100S, wherein 5 is monocrystalline silicon framework, and 6 is body silicon signal of telecommunication extraction electrode, and 7 is monocrystalline silicon weight mass piece, 8a, and 8b, 8c, 8d is elastic supporting beams.
Fig. 3 A is the 3-D view of the process substrates list device layer SOI monocrystalline silicon disk of processing movable silicon sensitive structure part 100S, Fig. 3 B is its cross section view of Fig. 3 A, single device layer monocrystalline silicon disk has 3-tier architecture as shown in Figure 3 B, this kind of SOI sheet has a monocrystalline silicon liner 4, there is silicon dioxide insulating layer 3 in the front of monocrystalline silicon liner 4, has monocrystalline silicon layer device layer 2 on silicon dioxide insulating layer 3.
Fig. 4 is the flow chart of steps of the processing method of a kind of high-precision accelerometer based on silicon layer transfer techniques of the present invention, wherein, described accelerometer comprises the electric pole plate connecting successively from top to bottom, the movable silicon construction package of spring beam-mass block structure, lower electrode plate, described method comprises: battery lead plate procedure of processing 410, and adopting sheet glass or monocrystalline silicon disk is substrate, processes described electric pole plate and lower electrode plate; Silicon device layer transfer step 420: using single device layer SOI sheet as substrate, described in processing, comprise the movable silicon sensitive structure part of spring beam, mass block structure, lower electrode plate using sheet glass or monocrystalline silicon disk as substrate with described in be processed with movable silicon sensitive structure part substrate be connected based on bonding mode, remove substrate layer and the oxygen buried layer of SOI monocrystalline silicon disk; Movable silicon sensitive structure part procedure of processing 430, at former SOI monocrystalline silicon disk device layer back side finished surface electrode and capacitance gap; Etching forms the movable silicon sensitive structure part of described spring beam-mass block structure, discharges movable silicon sensitive structure part and completes the processing of movable silicon sensitive structure part; Connection Step 440, is connected sheet glass or monocrystalline silicon disk with described movable silicon construction package as the electric pole plate of substrate based on bonding mode.
Fig. 5 is the main preparation process of spring beam-mass block structure movable silicon construction package 100S of a kind of high-precision accelerometer based on silicon layer transfer techniques of the present invention.
Beam one mass block structure movable silicon construction package 100S adopts at single device layer SOI monocrystalline silicon disk as beam one mass block structure process substrates.In process, adopt Silicon Crystal Anisotropic Etching to obtain capacitance gap in the front of single device layer SOI monocrystalline silicon disk; Sputter stripping technology is prepared metal extraction electrode; Electric pole plate using sheet glass as substrate with described in be processed with capacitance gap and metal extraction electrode SOI monocrystalline silicon disk be connected based on anode linkage mode; Or, using monocrystalline silicon disk as substrate processing lower electrode plate be connected based on the silicon-silicon bond mode of closing with the described SOI monocrystalline silicon disk that is processed with capacitance gap and metal extraction electrode; Monocrystalline substrate layer 4 and the silicon dioxide insulating layer 3 of the SOI monocrystalline silicon disk after bonding are removed in wet etching mode; Adopt Silicon Crystal Anisotropic Etching to obtain capacitance gap at the back side of SOI monocrystalline silicon disk device layer; Sputter stripping technology is prepared metal extraction electrode; From the back side, described device layer is carried out the vertical deep etching break-through of device layer, discharge spring beam-mass block structure, obtain elastic supporting beams simultaneously.
Specifically describe to Fig. 5 (l) below in conjunction with Fig. 5 (a).
Fig. 5 (a) is depicted as the substrate list device layer SOI monocrystalline silicon disk 1 of preparation 100S; Single device layer SOI monocrystalline silicon disk 1 obtains silicon dioxide layer through thermal oxide growth, and after photoetching, etching (corrosion) technique are carried out graphically, obtain silicon dioxide mask 50 as shown in Fig. 5 (b) in the front of single device layer SOI monocrystalline silicon disk.50 to carry out silicon corrosion as etching mask in TMAH solution as shown in Fig. 5 (b), obtain the initial capacitance gap 51 of capacitance accelerometer described in this patent.
Obtaining after 51, removing silicon dioxide etching mask 50.Spin coating photoresist photoetching on substrate, form photoresist layer.Form lead body silicon signal of telecommunication extraction electrode metal level at the front of substrate splash-proofing sputtering metal layer, generally adopt chromium (Cr) and the sputter formation successively of gold (Au) two kinds of metals.As shown in Fig. 5 (c), obtain extraction electrode 52 through the graphical metal level of stripping technology, and remove photoresist layer.
Electric pole plate 100Ga using sheet glass as substrate as shown in Fig. 5 (d) with as described in be processed with capacitance gap and body silicon signal of telecommunication extraction electrode SOI monocrystalline silicon disk be connected based on anode linkage mode; Or, using monocrystalline silicon disk as substrate processing electric pole plate 200Ga be connected based on the silicon-silicon bond mode of closing with the described SOI monocrystalline silicon disk that is processed with capacitance gap and metal extraction electrode.
As shown in Fig. 5 (e), by KOH anisotropic forms of corrosion, remove the monocrystalline substrate layer 4 of monocrystalline silicon disk after aforementioned bonding; Be patterned in and on silicon dioxide insulating layer 3, obtain silicon dioxide mask 53 as shown in Fig. 5 (f) by photoetching, etching (corrosion) technique.53 to carry out silicon corrosion as etching mask in TMAH solution as shown in Fig. 5 (g), obtain the initial capacitance gap 54 of capacitance accelerometer described in this patent.
Obtain after 54 as Fig. 5 (h) is shown in, remove silicon dioxide etching mask 53.Spin coating photoresist photoetching on substrate, form photoresist layer.Form lead body silicon signal of telecommunication extraction electrode metal level at the front of substrate splash-proofing sputtering metal layer, generally adopt chromium (Cr) and the sputter formation successively of gold (Au) two kinds of metals., as shown in Fig. 5 (i), obtain extraction electrode 55, and remove photoresist layer through the graphical metal level of stripping technology.
As shown in Fig. 5 (j), at the positive spin coating photoresist layer of substrate; Photoetching forms vertical deep etching mask 56; Taking as shown in Fig. 5 (k) 56 as the etching break-through in inductively coupled plasma etching of vertical deep etching mask, obtain movable mass 101 and Duo Gen monocrystalline silicon brace summer 8 (a-d).As shown in Fig. 5 (l), remove photoresist layer 56.
With reference to Fig. 6, Fig. 6 is the structural representation of vitreous electricity pole plate 100Ga.Wherein, 30 is substrate, and 31 is metal driving electrode, and 32 is vertical deep etching guard electrode, and 33 is contact conductor, and 34 is pressure welding electrode.
Fig. 7 (a)～(c) for preparing the main technological steps of vitreous electricity pole plate 100Ga (100Gb).Fig. 7 (a) is depicted as the base material of preparing vitreous electricity pole plate, polished glass sheet.Its feature is, the thermal expansion curve of this sheet glass and the thermal expansion curve of monocrystalline silicon approach, harmful effect device being caused to reduce bonding stress.
As shown in Fig. 7 (b), splash-proofing sputtering metal layer 71 cover glass substrate front, adopt as metal level 71-chromium (Cr) and gold (Au) two kinds of metals successively sputter form; As shown in Fig. 7 (c), by photoetching and the graphical metal level 71 of metal erosion technique, form metal driving electrode 31, vertical deep etching guard electrode 32, contact conductor 33, pressure welding electrode 34 metallic patterns such as grade.
As shown in Fig. 7 (d), the movable silicon construction package of beam one mass block structure, battery lead plate 100Ga on glass and glass lower electrode plate 100Gb are successively by the anode linkage mode formation accelerometer that is connected.
Figure 8 shows that left figure is that front and the right figure of monocrystalline silicon electrode plate 200Ga is the back side of monocrystalline silicon electrode plate 200Ga.Wherein, 40 is monocrystalline silicon substrate, and 41 is monocrystalline silicon cover plate metal driving electrode, and 42 is vertical deep etching guard electrode, and 43 is contact conductor, and 44 is monocrystalline silicon cover plate pressure welding electrode, and 45 is insulating oxide, and 46 is silicon bonding region.
Fig. 9 (a)～(d) for preparing the main technological steps of monocrystalline silicon electrode plate 200Ga (200Gb).Fig. 9 (a) is depicted as the base material of preparing monocrystalline silicon electrode cover plate, polishing high resistant monocrystalline silicon disk 40, and with insulating oxide 45.As shown in Fig. 9 (b), splash-proofing sputtering metal layer 91 cover glass substrate front, adopt as metal level 91-chromium (Cr) and gold (Au) two kinds of metals successively sputter form; As shown in Fig. 9 (c), by photoetching and the graphical metal level 92 of metal erosion technique, form metal driving electrode 41, vertical deep etching guard electrode 42, contact conductor 43, pressure welding electrode 44 metallic patterns such as grade.As shown in Fig. 9 (d), by photoetching and the graphical insulating oxide 45 of metal erosion technique, form silicon bonding region 46.
As shown in Fig. 9 (e), beam one mass block structure movable silicon construction package, monocrystalline silicon electric pole plate 200Ga and monocrystalline silicon lower electrode plate 200Gb form accelerometer by low temperature silicon one silicon bonding techniques successively.
Above the processing method of a kind of high-precision accelerometer based on silicon layer transfer techniques provided by the present invention is described in detail, applied specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment is just for helping to understand method of the present invention and core concept thereof; , for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention meanwhile.
Claims (7)
1. the processing method of the high-precision accelerometer based on silicon layer transfer techniques (SOLT), accelerometer comprises the electric pole plate connecting successively from top to bottom, the movable silicon sensitive structure part of spring beam-mass block structure, lower electrode plate, it is characterized in that, said method comprising the steps of:
Battery lead plate procedure of processing: adopt sheet glass or monocrystalline silicon disk as substrate, process described electric pole plate and lower electrode plate;
Silicon device layer transfer step: using single device layer SOI monocrystalline silicon disk as substrate, at device layer finished surface electrode and capacitance gap; Described SOI monocrystalline silicon disk is connected based on bonding mode with described lower electrode plate; Remove substrate layer and the oxygen buried layer of SOI monocrystalline silicon disk;
Movable silicon sensitive structure part procedure of processing: at former SOI monocrystalline silicon disk device layer back side finished surface electrode and capacitance gap; Etching forms the movable silicon sensitive structure part of described spring beam-mass block structure;
Bonding step: be connected based on bonding mode with described electric pole plate with the lower electrode plate of movable silicon construction package bonding described.
2. the processing method of accelerometer according to claim 1, is characterized in that, in the time adopting sheet glass as substrate, described power-on and power-off pole plate is connected based on anode linkage mode with described movable silicon sensitive structure part; Described battery lead plate procedure of processing comprises:
Metal level growth step forms metal level on glass substrate;
Metallic layer graphic step, graphical described metal level, forms detection-drive electrode, signal of telecommunication lead-out wire and the pressure welding electrode of described battery lead plate.
3. the processing method of accelerometer according to claim 1, is characterized in that, in the time adopting monocrystalline silicon substrate as substrate, described power-on and power-off pole plate is connected based on the silicon-silicon bond mode of closing with described movable silicon sensitive structure part; Described battery lead plate procedure of processing comprises:
Thermal oxide growth step forms oxidation insulating layer on monocrystalline silicon substrate by thermal oxide;
Metal level growth step forms metal level on described oxidation insulating layer;
Metallic layer graphic step, graphical described metal level, forms the detection-drive electrode of described battery lead plate, signal of telecommunication lead-out wire and pressure welding electrode;
The graphical step of oxidation insulating layer, corrodes described oxidation insulating layer, forms bonding bare silicon surfaces.
4. the processing method of accelerometer according to claim 1, is characterized in that, described silicon device layer transfer step: step comprises:
Device layer surface doping step: at device layer surface doping, doping type is with identical at described SOI monocrystalline silicon disk device layer doping type;
Initial capacitance spacing and bonding region obtaining step: on described SOI monocrystalline silicon disk device layer burnishing surface, erode away groove, obtain the initial capacitance spacing of sensitization capacitance and obtain bonding region simultaneously;
Metal level growth step: at device layer surface doping, doping type is with identical at described SOI monocrystalline silicon disk device layer doping type; Device layer growing metal after doping, and photolithography patterning forms electrode pattern;
Metallic layer graphic step: graphical described metal level, forms electrode pattern;
Device layer transfer step: the SOI monocrystalline silicon disk of described formation electrode pattern is connected in bonding mode with electric pole plate;
Remove substrate step: from the SOI monocrystalline silicon disk being connected with electric pole plate described in the corrosion of the back side, remove substrate layer.
5. the processing method of accelerometer according to claim 1, is characterized in that, described movable silicon sensitive structure part procedure of processing comprises:
Back side electric capacity spacing and bonding region obtaining step: erode away groove at the described SOI monocrystalline silicon disk device layer back side, obtain the initial capacitance spacing of sensitization capacitance and obtain bonding region simultaneously;
Movable electrode metal level growth step: at device layer superficial growth metal level;
Metallic layer graphic step: graphical described metal level, forms electrode pattern;
Spring beam-mass block structure release steps: carry out vertical deep etching from the described SOI monocrystalline silicon disk device layer back side, break-through device layer, discharges spring beam-mass block structure, obtains the movable silicon construction package of described spring beam-mass block structure.
6. according to the processing method of the accelerometer described in claim 5, it is characterized in that, in described spring beam-mass block structure release steps, described vertical deep etching is inductively coupled plasma etching.
7. the processing method of accelerometer according to claim 1, is characterized in that, described bonding step comprises:
Bonding step: the described electric pole plate with movable silicon construction package is connected based on bonding mode with described lower electrode plate.
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| CN107045073A (en) * | 2017-02-07 | 2017-08-15 | 中国科学院上海微系统与信息技术研究所 | Single silicon-chip double-sided symmetrical folds girder construction micro-acceleration sensor and preparation method thereof |
| CN107478198A (en) * | 2017-07-28 | 2017-12-15 | 北京航天控制仪器研究所 | A kind of high-precision MEMS angular transducers sensitive structure and processing method |
| CN110668394A (en) * | 2019-08-27 | 2020-01-10 | 华东光电集成器件研究所 | Preparation method of anti-interference overload-resistant MEMS accelerometer |
| CN114578094A (en) * | 2022-02-28 | 2022-06-03 | 湖南天羿领航科技有限公司 | High-overload torsional pendulum type silicon micro-accelerometer and preparation method thereof |
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