CN104102459A - Flash memory device and data processing method thereof - Google Patents
Flash memory device and data processing method thereof Download PDFInfo
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- CN104102459A CN104102459A CN201410315842.6A CN201410315842A CN104102459A CN 104102459 A CN104102459 A CN 104102459A CN 201410315842 A CN201410315842 A CN 201410315842A CN 104102459 A CN104102459 A CN 104102459A
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Abstract
The invention discloses a flash memory device and a data processing method thereof. The method includes presetting a wear redundancy value, namely the maximum value of difference of numbers of erasing times of different blocks of the flash memory device, of the blocks in the flash memory device to be N; establishing erasing counting tables EC(X) containing N+1 elements, setting a subscript value X to range from 0 to N, and arraying the N+1 elements from small to large according to the subscript value X; dividing all available blocks in the flash memory device into N+1 queues according to erasing counting values, adding the queues composed of the blocks with the erasing counting values to be zero into the EC (0), and allowing the queues contained by elements EC (1) to EC (N) to be empty; when writing the data, determining the minimum queue to be the one with the minimum erasing counting value but not empty in the erasing counting tables, and writing the data into the blocks of the minimum queue. The device and method has the advantages that wear balance of the blocks can be realized during data writing and deleting, and the purpose of prolonging service life can be achieved.
Description
Technical field
The present invention relates to flash memory technology field in the communications field, particularly, relate to a kind of data processing method and flash memory device of flash memory device.
Background technology
Flash memory device is a kind of erasable, rewritable electronics non-volatile memory medium, and it has been widely used in data-storage system.Still can save data during due to flash memory device power-off, it is commonly used to preserve presupposed information, as preservation data in the BIOS of computer (base program), PDA (personal digital assistant), digital camera etc., flash memory is a kind of than the better storage scheme of hard disk drive, and this shows still for obvious in the low capacity application that is no more than 4GB.
Flash memory device carries out erasable operation taking piece (Block) as unit, and the write operation of flash memory must be carried out at white space, if there have been data target area, must first wipe afterwards and write, and therefore erase operation is the basic operation of flash memory device.The advantage such as flash memory has that program speed is fast, the erasing time is short, noiselessness, heat radiation are little.
In the prior art, flash memory device is carried out to data when writing and wiping, there is following problem: erasing times is limited, a typical flash memory can be wiped maximum 100000 (SLC reliably, Single Layer Cell, single layer cell) and 3000 (MLC, Multi-Level Cell, multilevel-cells) inferior; In prior art, can not effectively manage the piece of flash memory device, cause in flash memory device the erasable number of times of all unbalanced, the serviceable life of having reduced flash memory device.
Summary of the invention
In order to solve the flash memory device home block erasing times lower problem in the unbalanced serviceable life causing existing in prior art, the present invention proposes a kind of data processing method and flash memory device of flash memory device.
The data processing method of flash memory device of the present invention, comprising:
In default flash memory device, the value of the wearing and tearing redundance of piece is N, and described wearing and tearing redundance N is the maximal value that allows the erasing times of different masses in flash memory device to differ;
The erase count table EC (X) that establishment comprises N+1 element, is made as respectively 0 to N by subscript value X, and a described N+1 element is arranged in order from small to large according to described subscript value X;
According to erase count value, all available empty pieces in described flash memory device are divided into N+1 queue, the queue of the piece that is 0 by erase count value composition adds in EC (0), and the queue that element EC (1) comprises to EC (N) is for empty;
In the time of data writing, determine in described erase count table that erase count value is minimum and for empty queue is minimum queue, data are write in the piece of described minimum queue.
The data processing method of flash memory device of the present invention, utilizes wearing and tearing redundance, can control the maximal value that in flash memory, the erasing times of piece differs.By the wear and tear value of redundance of setting, can in the time writing and delete data, realize the abrasion equilibration of piece.Wearing and tearing redundance can be set according to the different purposes of product, be worth littlely, weares and teares more balanced, thereby makes in flash memory device the erasing times equilibrium of all, to reach the raising object in serviceable life.
Flash memory device of the present invention, comprising:
Redundance presetting module, is N for the value of the wearing and tearing redundance of default flash memory device piece, and described wearing and tearing redundance N is the maximal value that allows the erasing times of different masses in flash memory device to differ;
Count table creation module, for creating the erase count table EC (X) that comprises N+1 element, is made as respectively 0 to N by subscript value X, and a described N+1 element is arranged in order from small to large according to described subscript value X;
Module is divided in queue, for all described flash memory device available empty pieces being divided into N+1 queue according to erase count value, the queue of the piece that is 0 by erase count value composition adds in EC (0), and the queue that element EC (1) comprises to EC (N) is for empty;
Data writing module, for when the data writing, determines in described erase count table that erase count value is minimum and for empty queue is minimum queue, data is write in the piece of described minimum queue.
Flash memory device of the present invention, utilizes wearing and tearing redundance, can control the maximal value that in flash memory, the erasing times of piece differs.By the wear and tear value of redundance of setting, can in the time writing and delete data, realize the abrasion equilibration of piece.Wearing and tearing redundance can be set according to the different purposes of product, be worth littlely, weares and teares more balanced, thereby makes in flash memory device the erasing times equilibrium of all, to reach the raising object in serviceable life.
Other features and advantages of the present invention will be set forth in the following description, and, partly from instructions, become apparent, or understand by implementing the present invention.Object of the present invention and other advantages can be realized and be obtained by specifically noted structure in write instructions, claims and accompanying drawing.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Brief description of the drawings
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for instructions, for explaining the present invention, is not construed as limiting the invention together with embodiments of the present invention.In the accompanying drawings:
Fig. 1 is method flow diagram of the present invention;
Fig. 2 is the structural representation of the erase count table of the embodiment of the present invention;
Fig. 3 is the erase count Biao Zhong queue structure schematic diagram of the embodiment of the present invention;
Fig. 4 is the schematic diagram that the piece of the embodiment of the present invention moves;
Fig. 5 is the schematic diagram that the queue of the embodiment of the present invention is moved;
Fig. 6 is the structural representation of flash memory device of the present invention;
Fig. 7 is erase count Biao Zhong of the present invention queue structure schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail, but is to be understood that protection scope of the present invention is not subject to the restriction of embodiment.
In order to solve the flash memory device home block erasing times lower problem in the unbalanced serviceable life causing existing in prior art, the present invention proposes a kind of data processing method and flash memory device of flash memory device.
For the many application of flash memory device write operation, can monitor each (block), thereby make the erasable number of times of each block average, avoid the erasable number of times of block that has too much, and the erasable number of times of some block is very few, and then the life-span of improving flash memory device.The present invention is mainly for the empty block in flash memory device, dynamically adjusts the wearing and tearing of wiping of different masses in flash memory device.Example below can illustrate that writing balance is the life-span of how to improve flash memory device:
Supposing has 4096 block in a MLC flash memory, write a file that takies 100 block sizes, within every 10 minutes, upgrades once, writes on same position.
While not writing balance method, the life cycle of flash memory is:
Life cycle (my god)=(nand flash memory size * erasing times/(writing block quantity every day)
Life cycle is so: (100 block*3 wipe for 000 time)/(100 block*6 time/hour * 24 hours/days)=20.83 days
While writing balance method, what the number of times of wiping can be average is assigned to each block above, supposes to have 1000 pieces can participate in writing balance, and so new life cycle is:
(1000 block*3 wipe for 000 time)/(100 block*6 time/hour * 24 hours/days)=200.83 days.
As shown in Figure 1, flash memory device data processing method of the present invention comprises:
Step S101: flash memory device described in initialization, by described flash memory device the erase count value zero clearing of free piece.
After flash memory device initialization, the erase count value of all available empty pieces is 0, and erase count value is the number of times that piece is carried out to erase operation.
Step S102: in default flash memory device, the value of the wearing and tearing redundance of piece is N;
Wearing and tearing redundance refers to and allows the maximal value that the erasing times value of different masses differs in flash memory device, concrete, and the value of N is determined by the purposes of flash memory device and master control, environment for use.
Step S103: create the erase count table EC (X) that comprises N+1 element, subscript value X is made as respectively to 0 to N, a described N+1 element is arranged in order from small to large according to described subscript value X;
Concrete, as shown in Figure 2, this erase count table comprises EC (0), EC (1) ... N+1 the elements such as EC (N), arrange each element in this table successively from small to large according to said sequence.
Step S104: all available empty pieces in described flash memory device are divided into N+1 queue according to erase count value, the queue of the piece that is 0 by erase count value composition adds in EC (0), and the queue that element EC (1) comprises to EC (N) is for empty;
Concrete, as shown in Figure 7, be the structural representation of each queue in erase count table.Each queue comprises the some physical blocks in flash memory, and each piece has register to carry out the erasing times of record block, and in same queue, the erase count value of all is identical.As shown in Figure 3, in the present embodiment, after flash memory device initialization, the equal zero clearing of erase count value of free piece, therefore,, by had time a piece queue addition element EC of composition (0), all the other element EC (1) are empty to the queue of EC (N).
Step S105: in the time of data writing, determine in described erase count table that erase count value is minimum and for empty queue is minimum queue, data are write in the piece of described minimum queue;
Concrete, when data are write to flash memory device, can arrange one and get block pointer, be used in reference to minimum to erase count value and be not empty queue; Adopt the principle of first in first out, from erase count table, selective erasing count value is minimum and be not empty queue, data is write in the piece of this queue.In the present embodiment, after flash memory device initialization, the erase count value minimum of the piece of queue in EC (0), and the queue that EC (0) comprises is not for empty, the queue of getting block pointer sensing is the queue in EC (0), writes the piece of queue in EC (0) by data.
Step S106: in the time deleting data, the erase count value of deleted data place piece is added to 1, and described deleted data place piece is moved on in next queue;
Concrete, when data in piece are deleted, piece can discharge again, the erase count value of piece adds 1, the subscript value of the each element in the new erase count value of this piece and erase count table is compared, this piece is joined to next queue, with the new corresponding queue of erase count value in.As shown in Figure 4, after the data of the piece block-0 × z in element EC (0) are deleted, the erase count value of this piece added to 1, and this piece is moved on in the queue of EC (1).
Step S107: in the time that the piece in described minimum queue all shifts out, the element at described minimum queue place is moved on to the end of described erase count table, redefine minimum queue;
Concrete, in the time that last piece in minimum queue is moved out of, the subscript value of the element at this queue place is revised as to N+1, and this element is moved on to the end of erase count table, as shown in Figure 5, in the present embodiment, after initialization, minimum queue is the queue of element EC (0), in the time that last piece of EC (0) is moved out of, EC (0) is revised as to EC (N+1), and move on to the end of erase count table, now the element in erase count table becomes EC (1), EC (2) ... N+1 the elements such as EC (N+1), get block pointer and point to the queue in EC (1), if EC (1) is empty, EC (1) is moved on to the end of erase count table, the like.
Again carry out data and write fashionablely, reselect erase count value minimum and be not empty queue, above-mentioned steps S101-S106 is carried out in circulation, can realize the abrasion equilibrium of wiping of flash memory device.
The data processing method of flash memory device of the present invention, utilizes wearing and tearing redundance, can control the maximal value that in flash memory, the erasing times of piece differs.By the wear and tear value of redundance of setting, can in the time writing and delete data, realize the abrasion equilibration of piece.Wearing and tearing redundance can be set according to the different purposes of product, be worth littlely, weares and teares more balanced, thereby makes in flash memory device the erasing times equilibrium of all, to reach the raising object in serviceable life.
As shown in Figure 6, flash memory device of the present invention comprises:
Initialization module, for flash memory device described in initialization, by described flash memory device the erase count value zero clearing of free piece.
Redundance presetting module 10, is N for the value of the wearing and tearing redundance of default flash memory device piece, and described wearing and tearing redundance N is the maximal value that allows the erasing times of different masses in flash memory device to differ;
Count table creation module 20, for creating the erase count table EC (X) that comprises N+1 element, is made as respectively 0 to N by subscript value X, and a described N+1 element is arranged in order from small to large according to described subscript value X;
Module 30 is divided in queue, for all described flash memory device available empty pieces being divided into N+1 queue according to erase count value, the queue of the piece that is 0 by erase count value composition adds in EC (0), and the queue that element EC (1) comprises to EC (N) is for empty;
Data writing module 40, for when the data writing, determines in described erase count table that erase count value is minimum and for empty queue is minimum queue, data is write in the piece of described minimum queue.
Data removing module 50, in the time deleting data, adds 1 by the erase count value of deleted data place piece, and described deleted data place piece is moved on in next queue.
Queue sinking module 60, in the time that the piece of described minimum queue all shifts out, moves on to the element at described minimum queue place the end of described erase count table, redefines minimum queue.
Flash memory device of the present invention, utilizes wearing and tearing redundance, can control the maximal value that in flash memory, the erasing times of piece differs.By the wear and tear value of redundance of setting, can in the time writing and delete data, realize the abrasion equilibration of piece.Wearing and tearing redundance can be set according to the different purposes of product, be worth littlely, weares and teares more balanced, thereby makes in flash memory device the erasing times equilibrium of all, to reach the raising object in serviceable life.
The present invention can have multiple multi-form embodiment; above taking Fig. 1-Fig. 6 as example is by reference to the accompanying drawings to technical scheme of the present invention explanation for example; this does not also mean that the applied instantiation of the present invention can only be confined in specific flow process or example structure; those of ordinary skill in the art should understand; the specific embodiments that above provided is some examples in multiple its preferred usage, and the embodiment of any embodiment the claims in the present invention all should be within technical solution of the present invention scope required for protection.
Finally it should be noted that: the foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, although the present invention is had been described in detail with reference to previous embodiment, for a person skilled in the art, its technical scheme that still can record aforementioned each embodiment is modified, or part technical characterictic is wherein equal to replacement.Within the spirit and principles in the present invention all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (8)
1. a data processing method for flash memory device, is characterized in that, comprising:
In default flash memory device, the value of the wearing and tearing redundance of piece is N, and described wearing and tearing redundance N is the maximal value that allows the erasing times of different masses in flash memory device to differ;
The erase count table EC (X) that establishment comprises N+1 element, is made as respectively 0 to N by subscript value X, and a described N+1 element is arranged in order from small to large according to described subscript value X;
According to erase count value, all available empty pieces in described flash memory device are divided into N+1 queue, the queue of the piece that is 0 by erase count value composition adds in EC (0), and the queue that element EC (1) comprises to EC (N) is for empty;
In the time of data writing, determine in described erase count table that erase count value is minimum and for empty queue is minimum queue, data are write in the piece of described minimum queue.
2. the data processing method of flash memory device according to claim 1, is characterized in that, in described default flash memory device, the value of the wearing and tearing redundance of piece also comprises before being N:
Flash memory device described in initialization, by described flash memory device the erase count value zero clearing of free piece.
3. the data processing method of flash memory device according to claim 1, is characterized in that, also comprises:
In the time deleting data, the erase count value of deleted data place piece is added to 1, and described deleted data place piece is moved on in next queue.
4. the data processing method of flash memory device according to claim 1, is characterized in that, also comprises:
In the time that the piece in described minimum queue all shifts out, the element at described minimum queue place is moved on to the end of described erase count table, redefine minimum queue.
5. a flash memory device, is characterized in that, comprising:
Redundance presetting module, is N for the value of the wearing and tearing redundance of default flash memory device piece, and described wearing and tearing redundance N is the maximal value that allows the erasing times of different masses in flash memory device to differ;
Count table creation module, for creating the erase count table EC (X) that comprises N+1 element, is made as respectively 0 to N by subscript value X, and a described N+1 element is arranged in order from small to large according to described subscript value X;
Module is divided in queue, for all described flash memory device available empty pieces being divided into N+1 queue according to erase count value, the queue of the piece that is 0 by erase count value composition adds in EC (0), and the queue that element EC (1) comprises to EC (N) is for empty;
Data writing module, for when the data writing, determines in described erase count table that erase count value is minimum and for empty queue is minimum queue, data is write in the piece of described minimum queue.
6. flash memory device according to claim 5, is characterized in that, also comprises:
Initialization module, for flash memory device described in initialization, by described flash memory device the erase count value zero clearing of free piece.
7. flash memory device according to claim 5, is characterized in that, also comprises:
Data removing module, in the time deleting data, adds 1 by the erase count value of deleted data place piece, and described deleted data place piece is moved on in next queue.
8. flash memory device according to claim 5, is characterized in that, also comprises:
Queue sinking module, in the time that the piece of described minimum queue all shifts out, moves on to the element at described minimum queue place the end of described erase count table, redefines minimum queue.
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| CN108182035A (en) * | 2017-12-28 | 2018-06-19 | 湖南国科微电子股份有限公司 | A kind of method for improving SSD reliabilities |
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