CN104112731B - Intelligent power module and manufacturing method thereof - Google Patents
Intelligent power module and manufacturing method thereof Download PDFInfo
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- CN104112731B CN104112731B CN201310301632.7A CN201310301632A CN104112731B CN 104112731 B CN104112731 B CN 104112731B CN 201310301632 A CN201310301632 A CN 201310301632A CN 104112731 B CN104112731 B CN 104112731B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Abstract
The invention is suitable for the technology of electronic devices, and provides an intelligent power module and a manufacturing method thereof. The intelligent power module comprises a substrate which is provided with a first surface on which an insulating layer is covered, circuit wiring which is arranged on the surface of the insulating layer, circuit elements which are arranged on corresponding positions of the circuit wiring, and pins which are connected with the circuit wiring and extend outwardly from the substrate. The intelligent power module also comprises a connecting conductor which is connected between one of the pins and the substrate, and the pin is a level pin. Connection of the substrate and specific level is realized via the connecting conductor so that area of the substrate is saved, miniature of the intelligent power module is realized, positions with level of the substrate do not need to be arranged near the main circuit wiring, influence on an EMI and an EMC can be omitted and design difficulty of the circuit wiring is greatly reduced.
Description
Technical field
The invention belongs to electronic device manufacturing process area, more particularly to a kind of SPM and its manufacture method.
Background technology
SPM（Intelligent Power Module, IPM）It is a kind of by power electronics and integrated circuit
The power drive class product that technology is combined.IPM integrates device for power switching and high-voltage driving circuit, and interior keeps
Voltage, overcurrent and the failure detector circuit such as overheated.On the one hand IPM receives the control signal of MCU, drives subsequent conditioning circuit work,
On the other hand send the state detection signal of system back to MCU.Compared with traditional discrete scheme, IPM is with its high integration, highly reliable
Property etc. advantage win increasing market, be particularly suitable for the frequency converter and various inverters of motor, be become frequency modulation
Speed, metallurgical machinery, electric propulsion, servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.
The structure of existing SPM 100 is illustrated with reference to Fig. 1.Fig. 1（A）It is bowing for the SPM 100
View, Fig. 1（B）It is Fig. 1（A）X-X ' line profiles.
SPM 100 has following structure, and which includes：Circuit substrate 106；Located at 106 table of the circuit substrate
The wiring 108 formed on insulating barrier 107 on face；Expose the circuit substrate 106 through the insulating barrier 107
Via 111；The component 104 being fixed on the wiring 108；Connection component 104 and the wiring
108 metal wire 105；By the via 111, connect the specific potential point and the circuit substrate of the wiring 108
106 through line 110, here, the specific potential point of the wiring 108 is generally ground potential, it is therefore an objective to shielding interference letter
Number；The pin 101 being connected with the wiring 108；The overall of the SPM 100 is sealed by sealing resin 102.
And in the fabrication process in order to avoid the component 104 in subsequent processing operations by electrostatic damage, it is described
The ad-hoc location of pin 101 is connected by reinforcement 109, such as shown in Fig. 1 (C)；The reinforcement 109 of the pin 101 is cut off
And the shape needed for being formed
The via 111 typically drills to be formed by milling cutter, and this control to rotating speed and direction is particular about very much, the insulation
Layer 107 has the drilled danger burst apart, the operation for forming via 111 be the minimum operation of existing SPM yield rate it
One.
In addition, drilling by milling cutter, the circuit substrate 106 for exposing can be caused rough, it is described through line 110
It is not tight with the connection of the circuit substrate 106, and the SPM 100 can typically be operated in severe operating mode
In, range of temperature is very big, described to have the risk come off with the circuit substrate 106 through line 110, once come off, institute
State SPM 100 and will be highly susceptible to interference signal impact, cause misoperation, the intelligent work(when serious, can be caused
There is blast in rate module 100 itself.
Additionally, the circuit layout of the SPM 100 needs for 111 reserved location of via, to increased circuit cloth
The difficulty of line：Such as Fig. 1（B）Shown, the via 111 must could pass through described through line near the wiring 108
110 form connection, if the position of the via 111 is excessively placed in the middle, the EMI of the SPM 100（Electro-
Magnetic Interference, electromagnetic interference）Can be excessive, and if the position of the via 111 excessively keep to the side, it is described
The EMC of SPM 100（Electro Magnetic Compatibility, Electro Magnetic Compatibility）Can decline.
Again, the via 111 needs to take certain area, and goes back between the via 111 and the wiring 108
Needs are maintained a certain distance, could be formed it is described through line 110, usually, this kind of structure will increase by more than 5% area, this
Undoubtedly increase the material cost of the SPM 100.
The content of the invention
Present invention seek to address that the deficiencies in the prior art, there is provided a kind of SPM of high reliability and a kind of operation
The SPM manufacture method that flow process is simplified, can be when ensureing that SPM is processed not by the feelings of electrostatic damage
Under condition, the pin of the SPM for producing is made to be fully sealed by coating.
The present invention is achieved in that a kind of SPM, including covering with first surface and in the first surface
Be stamped insulating barrier substrate, in the surface of insulating layer arrange wiring, in the wiring relevant position arrange
Component and it is connected with wiring and from the pin of the substrate extension, the SPM also includes electrically connecting
The connection conductor being connected between one of them described pin and the substrate, the pin are current potential pin.
The beneficial effect of SPM of the present invention is：Via need not be reserved and formed through line but by connection
Conductor realizes that substrate is connected with specific potential, saves substrate area, makes SPM realize miniaturization, possesses substrate
The position of current potential need not be arranged near main body circuit wiring, and the impact to EMI and EMC can be ignored, and significantly reduce circuit
The design difficulty of wiring.
Additionally, a slotted eye for being arranged on metal aluminum substrate back side ad-hoc location is also embedded in by pin, current potential is realized
The reliable contacts of pin and substrate, in the environment of long-term cold and hot change, do not result in yet and release.
Another object of the present invention is to provide a kind of manufacture method of SPM, comprise the following steps：
Substrate is made, and the first surface in the substrate covers insulating barrier, then circuit is laid in the surface of insulating layer
Wiring；
Making includes the pin of current potential pin and connection conductor；
In the component that the wiring relevant position arranges；
The pin is welded on corresponding pad makes which from the substrate extension；
The connection conductor is electrically connected between the current potential pin and the substrate；
The first surface of the substrate is coated with sealant.
The beneficial effect of the manufacture method of invention is：It is electrically connected between current potential pin and substrate by arranging connection,
The operation of the reserved via of traditional palpus is reduced so that specific potential is realized with the form through line, reduces to be formed through line
Operation, improves manufacture efficiency, and reduces SPM manufacture difficulty, improves SPM manufacture qualified
Rate.
Description of the drawings
Fig. 1（A）For the overlooking the structure diagram of existing SPM；
Fig. 1（B）It is Fig. 1（A）X-X ' line profiles；
Fig. 1（C）For the pin configuration schematic diagram of existing SPM；
Fig. 2（A）For the top view of SPM provided in an embodiment of the present invention；
Fig. 2（B）It is Fig. 2（A）The right profile of X-X ' lines；
Fig. 2（C）It is Fig. 2（A）The right profile of Y-Y ' lines；
Fig. 2（D）It is Fig. 2（A）Current potential pin and slotted eye side-looking size indication figure；
Fig. 2（E）It is Fig. 2（A）Current potential pin and slotted eye face size indication figure；
Fig. 3（A）For the process flow chart of the manufacture method of SPM provided in an embodiment of the present invention；
Fig. 3（B）For the process flow chart for making connection conductor provided in an embodiment of the present invention；
Fig. 4（A）、4（B）、4（C）For the operation for arranging substrate, insulating barrier and wiring provided in an embodiment of the present invention；
Fig. 5（A）、5（B）、5（C）For the operation for making pin provided in an embodiment of the present invention；
Fig. 6（A）、6（B）、6（C）For the operation for arranging component and welding pin provided in an embodiment of the present invention；
Fig. 7（A）、7（B）For the bonding and scavenger of the manufacture method of SPM provided in an embodiment of the present invention
Sequence；
Fig. 8 is the sealing process of SPM provided in an embodiment of the present invention；
Fig. 9 is that the present invention carries out pin Trim Molding the operation tested.
Specific embodiment
In order that the technical problem to be solved in the present invention, technical scheme and beneficial effect become more apparent, below in conjunction with
Drawings and Examples, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
With reference to Fig. 2（A）、2（B）、2（C）, SPM includes pin 11, sealant 12, component 14, metal
Line 15, substrate 16, insulating barrier 17, wiring 18, connection conductor 20.
Substrate 16 is the rectangular plate being made up of the aluminium of the materials such as 1100.Substrate 16 includes first surface and second surface,
The method that wiring 18 and the insulation of substrate 16 are formed on 16 surface of substrate is made there are two kinds：One is that corrosion protection processes aluminium base extremely
A few surface；Another be at least one surface of substrate 16 formed insulating barrier 17 after again in its circuit forming surface cloth
Line 18.
Insulating barrier 17 is covered in the first surface of substrate 16, and wiring 18 is arranged at the surface of insulating barrier 17, circuit elements
Part 14 is disposed in 18 relevant position of wiring.Wiring 18 is included for arranging the component pads of component 14, being used for
The pin pad 18A of welding pin 11.
In the present embodiment, pin 11 is connected with the pad 18A of wiring 18 and from 16 extension of substrate, and pin 11 includes one
Individual current potential pin 111, current potential pin 111 carry out the effect that is input into, exports with outside.And pin pad 18A includes one
For welding the pad 18AA of the current potential pin 111, pad 18AA is located at 16 edge of substrate, also is located at the edge of pad 18A.
In other embodiment, pad 18AA can be arranged and other pads 18A between.Here, current potential pin 111 is led to its pad 18AA
Cross the conductive electrically binding agent welding such as scolding tin；Connection conductor 20 is connected between current potential pin 111 and substrate 16.
Setting current potential pin 111 is electrically connected with substrate 16 by connection conductor 20 realizes that specific potential passes through reserved with tradition
Via and formation realize that specific potential is compared through line, save substrate area, make SPM realize miniaturization, make base
Plate possesses the position of current potential and need not be arranged near main body circuit wiring 18, and the impact to EMI and EMC can be ignored, and significantly drop
The low design difficulty of wiring 18.
In the present embodiment, sealant 12 is coated on first surface, second surface and the side near pin 11 of substrate 16
Face, it is therefore an objective to be will to be arranged on substrate 16 all elements that go out except the exposed parts of pin 11 to seal with sealant 12,
Need to seal connection conductor 20.
With reference to figure even Fig. 2（B）、2（D）And 2（E）, in a preferred embodiment, connection conductor 20 is bent, is connected
One end of conductor 20 and the electric connection of current potential pin 111,111 elasticity of other end relative potentials pin for connecting conductor 20 are abutted
In the second surface relative with first surface of substrate 16.In present embodiment, connection conductor 20 and the current potential pin 111 of bent
Form clamp structure so that pin 11 and connection conductor 20 can be clamped and be close to the second of substrate between the two respectively
Surface and pad 18AA.So that current potential pin 111 and connection conductor 20 are connect with the second surface of pad 18AA and substrate 16
Touch closely and electric conductivity is good.Preferably, connect conductor 20 to be integrally formed with current potential pin 111, or carried out after making respectively again
Welding.
Further, connect connecting portion 201, switching part 202 and the abutting part 203 that conductor 20 includes being sequentially connected, even
One end that socket part 201 is not connected with switching part 202 is electrically connected with current potential pin 111,202 opposing connections 201 of abutting part（I.e.
Current potential pin 111）Elasticity is connected to the second surface relative with first surface of substrate 16.Preferably, in present embodiment, connection
Conductor 20 is bent into " L " type, during assembling, connects being connected with current potential pin 111 for conductor 20, and the side of another side is close to
Second surface.As long as it is understood that the distance for arranging abutting part 203 with current potential pin 111 is slightly less than current potential pin 111
The distance between pad 18AA and second surface, then can simultaneously cause minor face to offset with elasticity with second surface to be close to so that
Firmly simultaneously electric conductivity is good.
Further, slotted eye 19 is opened up near the side of current potential pin 111 in substrate 16.In a preferred embodiment, groove
Hole 19 is the second surface groove relative with the pad 18AA positions of current potential pin 111 for being opened in substrate 16, or is to be opened in
Substrate 16 is to be opened in outside substrate 16 to draw near 111 side of the current potential pin blind hole relative with pad 18AA positions, i.e. slotted eye 19
The side of pin 11.Side wall of the side of the abutting part 203 of connection conductor 20 with slotted eye 19 near first surface is affixed.Assembling
When, connecting being connected with current potential pin 111 for conductor 20, the side wall of slotted eye 19 is close in the side of another side.As long as so
The distance of setting abutting part 203 and current potential pin 111 is slightly less than the pad 18AA and slotted eye and abutting part 203 of current potential pin 111
The distance between side wall for offseting, then can simultaneously cause minor face to be offseted with elasticity with the side wall of slotted eye 19 to be close to so that firmly
And electric conductivity is good.
By one slotted eye 19 of setting of the ad-hoc location in 16 second surface of substrate and side, current potential pin is realized
111 and the reliable contacts of substrate 16, in the environment of long-term cold and hot change, do not result in yet and release.
With reference to Fig. 2（D）, Fig. 2（E）, slotted eye 19 is relative with the pad 18AA of current potential pin 111, and connecting portion 201 is drawn with current potential
Pin 111 is vertical to be connected, and abutting part 203 is mutually perpendicular to connecting portion 201；Slotted eye 19 can be arranged to：Slotted eye 19 and pad 18AA
Center contact vertical first surface and second surface, certainly, now, first, second surface is parallel；Or it is so that slotted eye
19 are arranged on the projection that pad 18AA falls on second surface direction.
Specifically, the distance between abutting part 203 and current potential pin 111 are H1, side wall of the slotted eye 19 near first surface
Distance is H2 and the pad 18AA surfaces of current potential pin 111 between, and the length of connecting portion 201 is H3, is met：H1 ＜ H2 ＜ H3.
So, certain screen resilience can be produced when current potential pin 111 slips into slotted eye 19, makes current potential pin 111 and substrate
16 have more reliable contact, keep good electric conductivity.
Further, the height of slotted eye 19 is H4, then the height at the top of pad 18AA to 16 bottom of substrate is H1+H4, that
Following relation should be met：
H4<H1<H2<H3≤H1+H4。
In a preferred embodiment, the width K1 of slotted eye 19 is more slightly larger than the width K2 of current potential pin 111；The depth of slotted eye 19
L1 is more slightly larger than the L2 of current potential pin 111.
Pin 11 is typically made using metals such as copper, and copper surface forms one layer of nickeltin layer by chemical plating and plating,
Generally 5 ± 0.3 μm of the thickness of alloy-layer, coating can protect copper not to be corroded oxidation, and can improve weldability.
Component 14 is fixed on wiring 18 circuit for constituting regulation.Component 14 adopts transistor or two
The passive element such as the active components such as pole pipe or electric capacity or resistance.Alternatively, it is also possible to by the radiator by made by copper etc. by work(
The big element of the caloric values such as rate element is fixed on substrate 16.Here, active component for the installation that faces up etc. passes through metal wire 15
It is connected with wiring 18.
Wiring 18 is made up of metals such as copper and is insulated with substrate 16.In addition, deriving shape on the side of pin 11 in configuration
Into the pad 18A being made up of wiring 18.Here, multiple pad 18A being aligned with are set near one side of substrate 16,
And one of pad 18A is formed at the surface of slotted eye 19, specific pads 18A are designated as into 18AA, pad 18AA is electricity
The ground potential of road wiring 18；In the present embodiment, pad 18AA and slotted eye 19 are located at 16 edge of substrate, according to design needs, it
Can also be located at other positions.
Pad 18A is completely the same with 18 material of wiring and thickness, can typically use 1 ounce～2 ounces of Copper Foil,
In addition, wiring 18 is bonded on the surface of circuit substrate 16 by insulating barrier 17.
Metal wire 15 can be aluminum steel, gold thread or copper cash, be made between each component 14 by bonding, each wiring 18
Between, set up electrical connection between component 14 and wiring 18, be additionally operable to sometimes make circuit substrate 16 or pin 11
Electrical connection is set up and wiring 18 or component 14 between.
Insulating barrier 17 covers circuit substrate 16 at least one surface and is formed, and the high concentration in the resin materials such as epoxy resin
The fillers such as filling aluminum oxide improve thermal conductivity.
Sealant 12 also can using injection mould mode can use thermoplastic using thermosetting resin molding by transmitting mould mode
Property is resin molded.Here, sealant 12 fully seals all elements on a surface of the substrate 16 with wiring 18；
In addition, additionally providing a kind of manufacture method of the above-mentioned intelligent object of manufacture, in one more preferably embodiment, knot
Close Fig. 2（A）、2（B）、2（C）、2（D）, Fig. 2（E）With 3, the manufacture method is comprised the following steps：
Step S110：Substrate 16 is set, and the first surface in substrate 16 covers insulating barrier 17, then on 17 surface of insulating barrier
Lay wiring 18.
This operation is insulating barrier 17 to be formed on sizeable substrate 16 and is connected up in 17 circuit forming surface of insulating barrier
18 operation, and while make pin 11.
First, with reference to the top view Fig. 4 with insulating barrier 17 and formation 18 substrate 16 of wiring（A）With along Fig. 4
（A）X-X ' lines section Fig. 4（B）With face Fig. 4（C）, the sizeable circuit substrate of circuit layout design as needed
16.For general SPM, one piece of size can be chosen 64 ± 10mm × 30 ± 10mm, two sides is carried out at corrosion protection
Reason.Insulating barrier 17 is provided with least one surface of aluminium base.In addition, the surface mount in insulating barrier 17 has as circuit cloth
The Copper Foil of line 18.Then the Copper Foil of the operation manufacture is etched, partly removes Copper Foil, form wiring 18, circuit
Wiring 18 is included for arranging the component pads of component 14.
Here, the direct aluminium or copper material to 2 ± 1m × 2 ± 1m that is formed by of sizeable substrate 16 carries out gong plate
The mode of process is formed, and gong knife uses high-speed steel as material, and motor uses 5000 revs/min of rotating speed, gong knife to put down with sheet material
Knife is at right angles descended in face；Can also be formed by way of punching press.
Step S120, making include the pin 11 of current potential pin 111 and connection conductor 20.
Make the independent pin 11 with coating.Each pin 11 is formed with Copper base material plating nickel on surface, and they pass through
Reinforcement 29 connects, such as Fig. 5（A）It is shown, such as Fig. 4（B）For the schematic diagram of each individual pin 11, each individual pin 11 is made
It is 25 ± 5mm into length C, width K is 1.5 ± 0.3mm, and thickness H is the strip of 0.5 ± 0.2mm；Preferably, with reference to Fig. 5
（C）, current potential pin 111 formed with Copper base material plating nickel on surface, length C, width K, thickness H size it is consistent with the above.
Connection conductor 20 is formed with Copper base material plating nickel on surface so as to is formed with current potential pin 111 and is electrically connected.Connection conductor
20 can be soft conductor, or the rigid conductor with back stretch.
Then coating is formed by the method for chemical plating：By nickel salt and sodium hypophosphite mixed solution, and with the addition of suitable
When complexing agent, form nickel dam on the copper material surface for forming given shape, there is very strong passivation ability in metallic nickel, can be fast
Fast-growing can resist the corrosion of air, alkali and some acid into one layer of very thin passivating film.Nickel plating crystallizes superfine little, nickel layer thickness one
As be 0.1 μm；
Then pass through hydrosulphate technique, formed at room temperature shape and nickel dam copper material be immersed in positive tin from
Being powered in the plating solution of son, nickeltin layer being formed on nickel dam surface, at 5 μm, the formation of nickel dam is very big for nickel layer thickness general control
Improve protectiveness and solderability；
This is arrived, pin 11 and its current potential pin 111, the connection manufacture of conductor 20 are completed.
Step S130：In the component 14 that 18 relevant position of wiring arranges.
First, by stencil printer, using steel mesh, tin cream painting is carried out to the ad-hoc location of the wiring 18 of substrate 16
Dress, steel mesh can use the thickness of 0.13mm.
Secondly, with reference to top view Fig. 6（A）, carry out the installation of component 14：
Substrate 16 is put on carrier 21, component 14 can be directly placed at the ad-hoc location of wiring 18；Then,
The substrate 16 on carrier 21 and support tool 22 is put in by Reflow Soldering, tin cream solidification, component 14 are fixed.Carrier 21 and support tool
22 are made by materials such as compound stones.
Step S140：Connection conductor 20 is electrically connected between current potential pin 111 and substrate 16.In practical operation,
This step is synchronous with step S130 or order can be exchanged.
First, by stencil printer, using steel mesh, tin cream painting is carried out to the ad-hoc location of the wiring 18 of substrate 16
Dress, steel mesh can use the thickness of 0.13mm.
Secondly, with reference to top view Fig. 6（B）, carry out the installation of pin 11：
Support tool 22 is placed on carrier 21, pin 11 can be by such as Fig. 6（A）Paper vertical direction toward vertical lower side
To putting down, one end of pin 11 is placed on pad 18A, the other end is fixed by holding in the palm tool 22, is put in 21 He of carrier
Substrate 16 on support tool 22 is fixed by Reflow Soldering, tin cream solidification, pin 11.
Step S150：Connection conductor 20 is electrically connected between current potential pin 111 and substrate 16.Specifically, can be with profit
Fixed with Reflow Soldering after being electrically connected current potential pin 111 and substrate with soft connection conductor 20.
And additionally, in a preferred embodiment, using the rigid conductor 20 that connects by current potential pin 111 and substrate
16 are electrically connected with.Specifically, 20 bending of conductor will be connected, and will make one end of connection conductor 20 electrical with current potential pin 111
Connection, 111 elasticity of other end relative potentials pin are connected to the second surface relative with first surface of substrate 16.So that this enforcement
In mode, connection conductor 20 and the current potential pin 111 of bent form clamp structure so that pin and connection conductor can be pressed from both sides
Hold and be close to respectively the second surface and pad 18AA of substrate between the two.So that current potential pin 111 and connection conductor 20
The contact with pad 18AA and the second surface of substrate 16 closely and electric conductivity is good.Preferably, conductor 20 and current potential are connected
Pin 111 is integrally formed, or is welded after making respectively again.
So in actual fabrication technique, current potential pin 111 is then by such as Fig. 6（A）The X-X ' directions of arrow push, push
When, current potential pin 111 is at an acute angle with paper, makes Fig. 6（C）In M positions first touch second surface（Diagram is slotted eye 19
Position, it is to be understood that in the present embodiment, slotted eye 19 are omitted）, and N positions are not exposed to pad 18AA and are painted on
Tin cream thereon, until Q positions touch substrate 16, during this, current potential pin 111 can occur certain deformation, such as Fig. 6
（C）It is shown, N positions are gently touched on pad 18AA, thereafter by current potential pin 111 and its pad 18AA welding, Ke Yili
Solution, should be synchronous with step S140 during execution the present embodiment.
Step S160：The first surface of substrate 16 is coated with sealant 12.
With reference to Fig. 8, Fig. 7 represent using mould 50 by 12 hermetic sealing substrate 16 of sealant operation profile.
First, substrate 16 is toasted in oxygen-free environment, baking time is no less than 2 hours, baking temperature is selected
125 DEG C or so.
The circuit substrate 16 for having configured pin 11 is transported to into model 44 and 45.By making the bending part of pin 11 and consolidating
Determine device 46 to contact, carry out the positioning of substrate 16.
During matched moulds, then placement, substrate 16 in the die cavity being formed inside mould 50 inject sealing tree by cast gate 53
Fat.The method for being sealed can adopt the transmission mechanography or the injection molding using thermosetting resin using thermosetting resin
Method.And, correspondence is externally discharged by exhaust outlet 54 from the gas of the sealing resin mold cavity of the injection of cast gate 53.
In preferred embodiment, execution module is sealed, be by the first surface of substrate 16, second surface and
Side near pin 11 is coated with sealant 12.It is will to be arranged on substrate 16 exposed parts that go out pin 11 to remove that purpose is
Outer all elements are sealed with sealant 12, that is, need to seal connection conductor 20.And the intelligent work(high for consistency requirements
Rate module, the other surfaces with wiring 18 are not typically also carried out encapsulation process to substrate 16.
In a still further embodiment.Such as Fig. 3（B）Step S120 and step S150 can be specially；Step S121, step
Rapid S151 and step S152.
Step S121：Connecting portion 201, switching part 202 and abutting part 203 are in turn connected into into connection conductor 20.With reference to
Fig. 5（C）, in present embodiment, connection conductor 20 is bent into " L " type.Connection width L2 of the conductor 20 on 11 direction of pin can
1.9 ± 3mm is designed to, H1 may be designed to 1 ± 0.3mm, and H3 may be designed to 1.3 ± 0.3mm.
Step S151：One end that connecting portion 201 is not connected with switching part 202 is electrically connected with current potential pin 111.
Step S152：202 opposing connections of abutting part, 201 elasticity is connected to into second relative with first surface of substrate 16
Surface.
With reference to Fig. 6（C）During assembling, connect being connected with current potential pin 111 for conductor 20, the side of another side is close to
Second surface.As long as it is understood that the distance for arranging abutting part 203 with current potential pin 111 is slightly less than current potential pin 111
The distance between pad 18AA and second surface, then can simultaneously cause minor face to offset with elasticity with second surface to be close to so that
Firmly simultaneously electric conductivity is good.
In a still further embodiment.Step S151：Including step S1512 and step S1514.
Step S1512, opens up slotted eye near the side of current potential pin 111 in substrate 16.In a preferred embodiment, slotted eye
19 grooves relative with the pad 18AA positions of current potential pin 111 to be opened in the second surface of substrate 16, or to be opened in base
Plate 16 is to be opened in outside substrate 16 to draw near 111 side of the current potential pin blind hole relative with pad 18AA positions, i.e. slotted eye 19
The side of pin 11.Side wall of the side of the abutting part 203 of connection conductor 20 with slotted eye 19 near first surface is affixed.
Step S1514, the side wall of the side of abutting part 202 with slotted eye 19 near first surface are affixed.During assembling, connection is led
One side of body 20 is connected with current potential pin 111, and the side wall of slotted eye 19 is close in the side of another side.As long as so arranging abutting part
The side wall that the 203 pad 18AA for being slightly less than current potential pin 111 with the distance of current potential pin 111 are offseted with slotted eye and abutting part 203
The distance between, then can simultaneously cause minor face to be offseted with elasticity with the side wall of slotted eye 19 to be close to so that firmly simultaneously electric conductivity is good
It is good.
By one slotted eye 19 of setting of the ad-hoc location in 16 second surface of substrate and side, current potential pin is realized
111 and the reliable contacts of substrate 16, in the environment of long-term cold and hot change, do not result in yet and release.
Further, it is relative with the pad of current potential pin 111 that slotted eye 19 is set；Connecting portion 201 is vertical with current potential pin 111
Connection, abutting part 202 are mutually perpendicular to connecting portion 201；Slotted eye 19 and the center of pad 18AA contact vertical first surface and
Second surface, certainly, now, first, second surface is parallel；Or it is so that slotted eye 19 is arranged on pad 18AA and falls in the second table
Projection on the direction of face.
Wherein, the distance between abutting part 202 and current potential pin 111 are H1, slotted eye 19 near first surface side wall with
Between the bond pad surface of current potential pin 111, distance is H2；The length of connecting portion 201 is H3, is met：H1 ＜ H2 ＜ H3.
So, certain screen resilience can be produced when current potential pin 111 slips into slotted eye 19, makes current potential pin 111 and substrate
16 have more reliable contact, keep good electric conductivity.
Further, the height of slotted eye 19 is H4, then the height at the top of pad 18AA to 16 bottom of substrate is H1+H4, that
Following relation should be met：
H4<H1<H2<H3≤H1+H4。
In a preferred embodiment, the width K1 of slotted eye 19 is more slightly larger than the width K2 of current potential pin 111；The depth of slotted eye 19
L1 is more slightly larger than the L2 of current potential pin 111.
In a preferred embodiment, referrer module top view Fig. 7（A）With top view Fig. 7（B）, in step
Also include carrying out before S160 the operation of the connection of metal wire 15 cleaning base plate 16.
This operation is cleaning base plate 16 and carries out nation's line connection, makes component 14 and wiring 18 form electrical connection
The operation of the metal wire 15 of effect.
First substrate 16 is put in cleaning machine and is cleaned, by when the scaling powders such as the rosin remained during Reflow Soldering and punching press
The foreign matters such as the aluminum steel of residual are cleaned, according to component 14 wiring 18 arrangement density, cleaning can be by spray or super
The form that sound or both is combined is carried out.During cleaning, two or more pieces pin 11 is clamped by mechanical arm, substrate 16 is placed in into cleaning
In groove, and current potential pin 111 should not be clamped, in case the vibrations in cleaning process cause to separate with pad 18AA through pin 13；
Secondly, formed by the metal wire 15 of the ad-hoc location bonding certain diameter in component 14 and wiring 18
Electrical connection, here, the thickness of metal wire 15 should according to the size of binding point, required cocurrent flow ability, components and parts machinability
Etc. considering, usually, the diameter of single-wire not should be greater than 400 μm, no less than 15 μm, for the company of power device
Connect, it is contemplated that using many 400 μm of aluminum steel parallel connection bonding, for the connection of function element, it is contemplated that using single 38 μm
Aluminum steel carries out bonding,
With reference to Fig. 9, in a preferred embodiment, also include carrying out 11 Trim Molding of pin and carrying out after step S160
The operation of test, SPM are completed as product via this operation.
Mold assembly step is transmitted in front operation makes other parts in addition to pin 11 and current potential pin 111 all by resin 12
Sealing.This operation for example, is cut by external pin 11 and through pin in the position of dotted line 51 according to the length and shape needs for using
Definite shape is broken into, is easy to follow-up assembling.
Then module is put in test equipment, carries out conventional electric parameters testing, generally comprise pressure, the static work(of insulation
The test events such as consumption, delay time, test passes person are finished product.
Presently preferred embodiments of the present invention is the foregoing is only, not to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (12)
1. a kind of SPM, including being coated with the substrate of insulating barrier with first surface and in the first surface, in institute
The wiring for stating surface of insulating layer setting, the component arranged in the wiring relevant position and and wiring
Connect and from the pin of the substrate extension, it is characterised in that the SPM also includes being electrically connected at wherein one
Connection conductor between the individual pin and the substrate, the pin are current potential pin；
For bent, one end of the connection conductor is electrically connected with the conductor that connects with the current potential pin, and the other end is relative
The current potential pin elasticity is connected to the substrate second surface relative with the first surface.
2. SPM as claimed in claim 1, it is characterised in that the connection conductor includes the connection being sequentially connected
Portion, switching part and abutting part, one end that the connecting portion is not connected with the switching part are electrically connected with the current potential pin,
The relatively described connecting portion elasticity of the abutting part is connected to the substrate second surface relative with the first surface.
3. SPM as claimed in claim 2, it is characterised in that in the substrate near the one of the current potential pin
Side opens up slotted eye, and side wall of the side of the abutting part with the slotted eye near the first surface is affixed.
4. SPM as claimed in claim 3, it is characterised in that the pad phase of the slotted eye and the current potential pin
Right, the connecting portion is vertical with the current potential pin to be connected, and the abutting part is mutually perpendicular to the connecting portion；
Wherein, the distance between the abutting part and described current potential pin are H1, and the slotted eye is near the side of the first surface
Between the bond pad surface of wall and the current potential pin, distance is H2, and the length of the connecting portion is H3, is met：H1 ＜ H2 ＜ H3.
5. SPM as claimed in claim 3, it is characterised in that the slotted eye for be opened in the second surface with
The relative groove of the pad of the current potential pin, or to be opened in the substrate near the current potential pin side and the pad
Relative blind hole.
6. SPM as claimed in claim 1, it is characterised in that also including sealant, the sealant is coated on
The side of the first surface, the second surface and the close pin of the substrate.
7. a kind of manufacture method of SPM, it is characterised in that comprise the following steps：
Substrate is made, and the first surface in the substrate covers insulating barrier, then wiring is laid in the surface of insulating layer；
Making includes the pin of current potential pin and connection conductor；
In the component that the wiring relevant position arranges；
The pin is welded on corresponding pad makes which from the substrate extension；
The connection conductor is electrically connected between the current potential pin and the substrate；
The first surface of the substrate is coated with sealant；
It is described by it is described connection conductor be electrically connected between the current potential pin and the substrate the step of include：
By the connection conductor bending, one end of the connection conductor is made to be electrically connected with the current potential pin, the other end is relative
The current potential pin elasticity is connected to the substrate second surface relative with the first surface.
8. the manufacture method of SPM as claimed in claim 7, it is characterised in that the making includes current potential pin
Pin and connection conductor, by it is described connection conductor be electrically connected between the current potential pin and the substrate the step of wrap
Include：
Connecting portion, switching part and abutting part are in turn connected into into the connection conductor；
One end that the connecting portion is not connected with the switching part is electrically connected with the current potential pin；
The abutting part relatively described connecting portion elasticity is connected to into the substrate second surface relative with the first surface.
9. the manufacture method of SPM as claimed in claim 8, it is characterised in that described by the abutting part phase
The substrate second surface step relative with the first surface is connected to the connecting portion elasticity to be included；
Slotted eye is opened up near the side of the current potential pin in the substrate；
Side wall of the side of the abutting part with the slotted eye near the first surface is affixed.
10. the manufacture method of SPM as claimed in claim 9, it is characterised in that arrange the slotted eye with it is described
The pad of current potential pin is relative；The connecting portion is vertical with the current potential pin to be connected, the abutting part and the connecting portion phase
It is mutually vertical；
Wherein, the distance between the abutting part and described current potential pin are H1, and the slotted eye is near the side of the first surface
Between the bond pad surface of wall and the current potential pin, distance is H2；The length of the connecting portion is H3, is met：H1 ＜ H2 ＜ H3.
The manufacture method of 11. SPMs as described in claim 9 or 10, it is characterised in that the slotted eye is to open up
The groove relative with the pad of the current potential pin with the second surface, or draw near the current potential to be opened in the substrate
The pin side blind hole relative with the pad.
The manufacture method of 12. SPMs as claimed in claim 7, it is characterised in that the institute by the substrate
State first surface and be specially with sealant encapsulation steps：
Coated by the first surface of the substrate, the second surface and near the side of the pin with sealant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310301632.7A CN104112731B (en) | 2013-07-17 | 2013-07-17 | Intelligent power module and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310301632.7A CN104112731B (en) | 2013-07-17 | 2013-07-17 | Intelligent power module and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN104112731A CN104112731A (en) | 2014-10-22 |
| CN104112731B true CN104112731B (en) | 2017-03-22 |
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|---|---|---|---|---|
| US6310388B1 (en) * | 1997-06-06 | 2001-10-30 | Micron Technology, Inc. | Semiconductor die assembly having leadframe decoupling characters |
| CN1575090A (en) * | 2003-06-11 | 2005-02-02 | 三洋电机株式会社 | Hybrid integrated circuit device |
| CN101174613A (en) * | 2006-10-31 | 2008-05-07 | 三洋电机株式会社 | Circuit device and its manufacturing method |
| WO2009001554A1 (en) * | 2007-06-27 | 2008-12-31 | Sanyo Electric Co., Ltd. | Circuit device |
| CN203481218U (en) * | 2013-07-17 | 2014-03-12 | 广东美的制冷设备有限公司 | Intelligent power module |
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2013
- 2013-07-17 CN CN201310301632.7A patent/CN104112731B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6310388B1 (en) * | 1997-06-06 | 2001-10-30 | Micron Technology, Inc. | Semiconductor die assembly having leadframe decoupling characters |
| CN1575090A (en) * | 2003-06-11 | 2005-02-02 | 三洋电机株式会社 | Hybrid integrated circuit device |
| CN101174613A (en) * | 2006-10-31 | 2008-05-07 | 三洋电机株式会社 | Circuit device and its manufacturing method |
| WO2009001554A1 (en) * | 2007-06-27 | 2008-12-31 | Sanyo Electric Co., Ltd. | Circuit device |
| CN203481218U (en) * | 2013-07-17 | 2014-03-12 | 广东美的制冷设备有限公司 | Intelligent power module |
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| Publication number | Publication date |
|---|---|
| CN104112731A (en) | 2014-10-22 |
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