CN104157229B - The detection method of a kind of array base palte and equipment - Google Patents
The detection method of a kind of array base palte and equipment Download PDFInfo
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- CN104157229B CN104157229B CN201410370657.7A CN201410370657A CN104157229B CN 104157229 B CN104157229 B CN 104157229B CN 201410370657 A CN201410370657 A CN 201410370657A CN 104157229 B CN104157229 B CN 104157229B
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Abstract
The invention discloses detection method and the equipment of a kind of array base palte, to realize the accurate detection of bad pixel in high number of pixels display product.The pixel detecting method of this array base palte includes: preset in same area, image sensor pixel group number and array base palte is gone together or the corresponding relation of TFT number of pixels of same column；Determine in n times detection action with corresponding relation, each time the incident light beam strikes more previous side-play amount of spectroscopical angle of incidence during detection；According to side-play amount during n times detect, regulate the spectroscopical angle of incidence of current incident light beam strikes, comparing front one-time detection process during making current detection, the position of the reflection that each image sensor pixel group receives N number of described TFT pixel corresponding to light translates a TFT pixel along prescribed direction；The light intensity result that during detecting according to n times, each image sensor pixel group gathers, determines the position of bad TFT pixel.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to detection method and the equipment of a kind of array base palte.
Background technology
Along with the variation of flat panel display development, the bad of product also presents variation.Reduce and produce
Cost and raising yields are the targets that each producer is pursued always.Therefore, in the process making array base palte
In need to use multiple array detection equipment, for after having made every one procedure detection product whether belong to
In non-defective unit.
During the array base palte making thin film transistor LCD device, to thin film transistor (TFT) array
Detection equipment be broadly divided into two classes, a class is optical detection apparatus, for detecting the array on array base palte
The granule of circuit, this granule may be from the dust in air or from the spot in coating process, but
When this granule is sufficiently large, the follow-up electrical detection equipment that array circuit is detected can be damaged；Another kind of
Being electrical detection equipment, in the case of array circuit powers up, whether detection thin film transistor (TFT) pixel exists
Cause bad factor, in order to repair in time.
Such as, Authorization Notice No. is that the Chinese utility model patent of CN203606585.U discloses a kind of electricity
Learning detection equipment, as shown in Figure l, described electrical detection equipment includes light source 101, spectroscope 102, object lens
103, the image that manipulator 104, charge coupled cell (Charge coupled Device, CCD) are formed
Sensor 106, and image processor 107；Wherein, described manipulator 104 includes glass plate, reflective
Mirror, the electrode being arranged on glass plate and the liquid crystal between glass plate and illuminator.Described spectroscope
102 is semi-transparent semi-reflecting lens, and the luminous reflectance being used for launching light source is to described object lens 103, described to making
The light transmission that manipulator 104 reflects；Described object lens 103 are lens, for by incident beam spread
Or converge；Described imageing sensor 106, is responsible for gathering the light intensity that described manipulator 104 returns；Described
Image processor 107 is for processing the light intensity data that CCD gathers.
The incident illumination that light source 101 sends is after the reflection of spectroscope 102, then enters modulation through object lens 103
Device 104, and then be radiated on array base palte 105 to be detected；Meanwhile, at described manipulator 104
Electrode add 320V voltage, after array base palte 105 powers up, can be in the TFT pixel of array base palte 105
Form electric field between the electrode of electrode and manipulator 104, and the liquid crystal in manipulator 104 is according to described electric field
Intensity size and there is different deflection, the difference in the liquid crystal deflection direction in manipulator 104 is so that warp
Crossing the reflection light that liquid crystal reflection goes back also the most different, reflection light sequentially passes through transmission and the light splitting of object lens 103 again
Entering imageing sensor 106 after the transmission of mirror 102, imageing sensor 106 reflection light is converted into numeral letter
It is transferred to image processor 107, image processor 107 and then the intensity according to reflection light after number and judges array
Pixel on substrate 105 is the most normal.
The highest display screen that represents can for the number of pixels (PPI, Pixels Per Inch) being had due to per inch
With the highest density display image, therefore, the product of high PPI is pursued by user and producer always, here
The product of high PPI means above the product of 300PPI.And in the process produced, the solution of electrical detection equipment
Analysis ability decides and can produce how high PPI, figure l in, the size of manipulator 104 be 130mm ×
130mm, and the analytic ability of imageing sensor 106 is 4K × 4K, wherein, 1K=1000, it may be assumed that level
Being dispersed with 4K photosensitive unit with vertical direction respectively, can calculate according to detection principle, electrical detection sets
Standby resolution is 32.5 μm (130mm/4K)；Fig. 2 is that existing electrical detection equipment is at detection picture
The illumination range schematic diagram that when element is smaller in size than the size of photosensitive unit, manipulator is radiated on array base palte, as
Shown in Fig. 2, owing to Pixel Dimensions is less than 32.5 μm, it may be assumed that Pixel Dimensions is already less than an electric charge coupling
The size of the photosensitive unit of clutch part, is modulated the illumination range that device is radiated on array base palte and has been much larger than
Pixel Dimensions, the Detection capability of existing electrical detection equipment cannot detect Pixel Dimensions less than 32.5 μm
Pixel, therefore, the bad pixel shown in product for high PPI cannot be carried out accurately detecting.
Summary of the invention
It is an object of the invention to provide detection method and the equipment of a kind of array base palte, to realize high number of pixels
The accurate detection of bad TFT pixel in display product.
It is an object of the invention to be achieved through the following technical solutions:
The embodiment of the present invention provides the detection method of a kind of array base palte, including:
Preset in same area, image sensor pixel group number and array base palte go together or same column
The corresponding relation of TFT number of pixels, described corresponding relation be 1:N, N be the integer more than or equal to 2；
Determine in n times detection action with described corresponding relation, each time incident light beam strikes light splitting during detection
The side-play amount of the spectroscopical angle of incidence of incident light beam strikes during the angle of incidence of mirror one-time detection earlier above；
According to described side-play amount during n times detect, regulate the spectroscopical incidence of current incident light beam strikes
Angle, compares front one-time detection process during making current detection, each described image sensor pixel group receives
The position of the reflection N number of described TFT pixel corresponding to light translate a described TFT picture along prescribed direction
Element；
The light intensity result that during detecting according to n times, each described image sensor pixel group gathers, determines not
The position of good described TFT pixel.
Preferably, the spectroscopical angle of incidence of the current incident light beam strikes of described regulation, including:
By adjusting the position of light source, regulate the spectroscopical angle of incidence of current incident light beam strikes.
Preferably, the spectroscopical angle of incidence of the current incident light beam strikes of described regulation, including:
By adjusting spectroscopical angle, regulate the spectroscopical angle of incidence of current incident light beam strikes.
Preferably, the spectroscopical angle of incidence of the current incident light beam strikes of described regulation, including:
N number of light source is set, and angle of incidence corresponding to side-play amount described in each light source correspondence one；
By the light source regulation spectroscopical angle of incidence of current incident light beam strikes that application is different.
Preferably, described prescribed direction is line direction；Or,
Described prescribed direction is column direction.
Preferably, the described detection knot obtained according to each described image sensor pixel group during n times detection
Really, determine the position of bad described TFT pixel, including:
That obtain according to multiple described image sensor pixel groups, include the light intensity of same described TFT pixel
As a result, determine the average voltage level that each described light intensity result characterizes, if each described average voltage level not phase
Deng, it is determined that this described TFT pixel is bad.
The embodiment of the present invention has the beneficial effect that: by the regulation spectroscopical angle of incidence of incident light beam strikes, make N
During secondary detection, the TFT pixel of each image sensor pixel group detection changes, same according to correspondence
N number of testing result of one TFT pixel can determine that whether this TFT pixel exists bad, thus realizes height
The accurate detection of the bad TFT pixel in PPI pixel display product.
The embodiment of the present invention provides the pixel detection equipment of a kind of array base palte, including:
Unit is set, goes together or the TFT of same column on array base palte for setting image sensor pixel group
The corresponding relation of pixel, described corresponding relation be 1:N, N be the integer more than or equal to 2；
Side-play amount unit, for determining in n times detection action with described corresponding relation, detects process each time
The spectroscopical incidence of incident light beam strikes during middle incident light beam strikes spectroscopical angle of incidence one-time detection earlier above
The side-play amount at angle；
Angle of incidence adjustment unit, is used for according to described side-play amount during n times detect, and regulation is current incident
The incident spectroscopical angle of incidence of light, compares front one-time detection process, each described figure during making current detection
The position of the reflection that picture sensor pixel group receives N number of described TFT pixel corresponding to light is along prescribed direction
Translate a described TFT pixel；
Result identifying unit, during detecting according to n times, each described image sensor pixel group gathers
Light intensity result, determines the position of bad described TFT pixel.
Preferably, described angle of incidence adjustment unit, by adjusting the position of light source, regulate current incident illumination and enter
Penetrate spectroscopical angle of incidence.
Preferably, described angle of incidence adjustment unit, by adjusting spectroscopical angle, regulate current incident illumination
Incident spectroscopical angle of incidence.
Preferably, described detection equipment includes N number of light source, and described in each light source correspondence one, side-play amount institute is right
The angle of incidence answered；
Described angle of incidence adjustment unit, regulates current incident light beam strikes by the light source that application is different spectroscopical
Angle of incidence.
Preferably, described result identifying unit, obtain according to multiple described image sensor pixel groups, bag
Include the light intensity result of same described TFT pixel, determine the average voltage that each described light intensity result characterizes
Value, if each described average voltage level is unequal, it is determined that this described TFT pixel is bad.
The embodiment of the present invention has the beneficial effect that: by the regulation spectroscopical angle of incidence of incident light beam strikes, make N
During secondary detection, the TFT pixel of each image sensor pixel group detection changes, same according to correspondence
N number of testing result of one TFT pixel can determine that whether this TFT pixel exists bad, thus realizes height
The accurate detection of the bad TFT pixel in PPI pixel display product.
Accompanying drawing explanation
Fig. 1 is the structural representation of the pixel detection equipment of a kind of array base palte in prior art；
Fig. 2 is existing detection equipment incident illumination when TFT Pixel Dimensions is less than image sensor pixel size
Illumination range schematic diagram；
Fig. 3 is the flow chart of the detection method of a kind of array base palte of offer in the embodiment of the present invention one；
Fig. 4 is to detect procedural image sensor pixel group and TFT pixel in the embodiment of the present invention two for the first time
Corresponding schematic diagram；
Fig. 5 is second time detection procedural image sensor pixel group and TFT pixel in the embodiment of the present invention two
Corresponding schematic diagram；
The structured flowchart of the pixel detection equipment of a kind of array base palte that Fig. 6 provides for the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with Figure of description, the embodiment of the present invention is realized process to be described in detail.Should be noted that
, the most same or similar label represents same or similar element or has same or like merit
The element of energy.The embodiment described below with reference to accompanying drawing is exemplary, is only used for explaining the present invention,
And be not considered as limiting the invention.
Embodiment one
Seeing Fig. 3, the embodiment of the present invention provides the detection method of a kind of array base palte, including:
301, preset in equal area, image sensor pixel group number and array base palte are gone together or
The corresponding relation of the TFT number of pixels of same column, corresponding relation be 1:N, N be whole more than or equal to 2
Number.
For the display product of high PPI, its TFT Pixel Dimensions is less than 32.5 μm, it may be assumed that TFT pixel
Size is already less than the size of an image sensor pixel, therefore by multiple image sensor pixel pie graphs
As sensor pixel group, each image sensor pixel group can gather the intensity information of multiple TFT pixel.
Preset the corresponding relation of image sensor pixel group and TFT pixel, in order to follow-up to imageing sensor picture
N number of TFT pixel that element group detects carries out identification.
In the present embodiment, imageing sensor can be charge coupled cell (Charge coupled Device,
CCD) constitute, it is also possible to referred to as ccd image sensor.
302, determine in n times detection action with corresponding relation, during detection, incident light beam strikes divides each time
The side-play amount of the spectroscopical angle of incidence of incident light beam strikes during the angle of incidence of light microscopic one-time detection earlier above.
Due to the corresponding multiple TFT pixels of an image sensor pixel group, a therefore image sensor pixel
The reflection light that group pixel is received cannot reflect that some TFT pixel is bad, also implies that for a certain TFT
What pixel was the worst concludes and cannot be completed by an independent image sensor pixel group, needs a TFT pixel
Form different TFT pixel groups from other different pixels, different TFT pixel groups detected,
By the testing result of multiple different pixels groups, determine the TFT pixel that the plurality of TFT pixel groups is total
The worst.In order to reach this purpose, need to make to have partially during the spectroscope of incident light beam strikes detection equipment
Shifting amount, the most each angle of incidence is the most different, so that including the different TFT pixel groups institutes of same TFT pixel
Corresponding reflection light is gathered by different image sensor pixel groups.
In the actual application of the embodiment of the present invention, following method can be crossed and realize the regulation of angle of incidence:
Such as, by adjusting the position of light source, the spectroscopical angle of incidence of current incident light beam strikes is regulated；Example again
As, by adjusting spectroscopical angle, regulate the spectroscopical angle of incidence of current incident light beam strikes；The most such as,
N number of light source, and the corresponding angle of incidence corresponding to a side-play amount of each light source are set, by applying different light
The source regulation spectroscopical angle of incidence of current incident light beam strikes.Certainly, it is more than multiple regulation angle of incidence modes
In optimal way, only for explanation, the present invention is not limited thereto.
303, according to side-play amount during n times detect, regulate the spectroscopical incidence of current incident light beam strikes
Angle, compares front one-time detection process during making current detection, it is anti-that each image sensor pixel group receives
The position penetrating the N number of TFT pixel corresponding to light translates a TFT pixel along prescribed direction.
In the present embodiment, the reflection light that image sensor pixel group receives directly reflects TFT pixel
Position, if the direction of the position translation of TFT pixel that an image sensor pixel group detects is different, then
To judging that bad TFT pixel has bigger difficulty, the prescribed direction being therefore used for translation in the present embodiment is led to
It is often line direction or column direction, and the direction of translation is identical during whole detection.
304, the light intensity result that during detecting according to n times, each image sensor pixel group gathers, determine
The position of bad TFT pixel.
In the present embodiment, that can obtain according to multiple image sensor pixel groups, include same TFT pixel
Light intensity result, determine the average voltage level that each light intensity result characterizes, if each average voltage level not phase
Deng, it is determined that this TFT pixel is bad.
The embodiment of the present invention has the beneficial effect that: by the regulation spectroscopical angle of incidence of incident light beam strikes, make N
During secondary detection, the TFT pixel of each image sensor pixel group detection changes, same according to correspondence
N number of testing result of one TFT pixel can determine that whether this TFT pixel exists bad, thus realizes height
The accurate detection of the bad TFT pixel in PPI pixel display product.
Embodiment two
For the detection method of the more detailed description embodiment of the present invention one, in the present embodiment, with each image
Illustrate as a example by corresponding two the TFT Pixel Dimensions of sensor pixel packet size.
Seeing Fig. 4, when detecting high PPI and showing product, image sensor pixel group is corresponding with TFT pixel
Relation is 1 to many, and the quality that light intensity is multiple pixel received due to an image sensor pixel group is altogether
The result of same-action.If certain TFT pixel is problematic, the image sensor pixel group of its correspondence receives
Light intensity is converted to the light intensity that magnitude of voltage and other image sensor pixel groups receive and is converted to magnitude of voltage difference
Less, detection equipment not can determine that whether this TFT pixel has the worst, such as:
Testing result (the light that image sensor pixel group receives obtained by combination Fig. 4 as shown in table 1
Being converted to by force magnitude of voltage is 8V, and corresponding TFT pixel is non-defective unit), for the TFT shown in Fig. 4
Pixel 5 is bad, and corresponding image sensor pixel group 3 receive light intensity to be converted to voltage be 7V, image
Sensor pixel group 1, image sensor pixel group 2 and image sensor pixel group 4 receive light intensity conversion
Being voltage is 8V, and difference is (8V-7V)/8V=12.5%, owing to difference the least detection equipment cannot be true
Determine whether have TFT pixel to have bad.
Table 1
In the embodiment of the present invention, by regulation angle of incidence so that different image sensor pixel group detections is same
The TFT pixel groups that one TFT pixel and different pixels separately constitute.For each image sensor pixel group with
When the corresponding relation of TFT pixel is 1:2, for a certain TFT pixel, twice detection is needed to determine this
TFT pixel is the worst.For the first time during detection, incident with the first incident angles light, now TFT
Pixel and image sensor pixel group corresponding relation are as shown in Figure 4；During second time detection, enter with second
The incident light beam strikes of firing angle, the second angle of incidence has side-play amount relative to the first angle of incidence, now TFT pixel and
Image sensor pixel group corresponding relation is as shown in Figure 5.During second detection, image sensor pixel group
The position reflecting TFT pixel corresponding to light received offsets a TFT picture during comparing detection for the first time
Element.Concrete, for the first time during detection, the corresponding TFT pixel 1 and TFT of image sensor pixel group 1
Pixel 2, corresponding TFT the pixel 3 and TFT pixel 4 of image sensor pixel group 2, imageing sensor picture
Corresponding TFT the pixel 5 and TFT pixel 6 of element group 3, the corresponding TFT pixel 7 of image sensor pixel group 4
With TFT pixel 8；During second time detection, the corresponding TFT pixel 1 of image sensor pixel group 1, figure
As corresponding TFT the pixel 2 and TFT pixel 3 of sensor pixel group 2, image sensor pixel group 3 is corresponding
TFT pixel 4 and TFT pixel 5, corresponding TFT the pixel 6 and TFT pixel of image sensor pixel group 4
7.The result of second time detection is as shown in table 2:
Table 2
Owing in the result of detection for the first time, image sensor pixel group 2 and image sensor pixel group 4 connect
Receiving light intensity to be converted to magnitude of voltage and be 8, therefore detection judges for the first time: image sensor pixel group 2 He
The TFT pixel 3 of image sensor pixel group 4 correspondence, TFT pixel 4, TFT pixel 7 and TFT picture
Element 8 is all without bad.Image sensor pixel group 3 receives light intensity and is converted to magnitude of voltage and is 7, and it is described
Corresponding TFT pixel 5 and TFT pixel 6 there is a pixel to there may be bad.
In the result of second time detection, image sensor pixel group 2 and image sensor pixel group 4 receive
Being converted to magnitude of voltage to light intensity and be 8, therefore second time detection judges: image sensor pixel group 2 and figure
As the TFT pixel 2 of sensor pixel group 4 correspondence, TFT pixel 3, TFT pixel 6 and TFT pixel 7
All without bad.Image sensor pixel group 3 receives light intensity and is converted to magnitude of voltage and is 7, illustrates that it is corresponding
TFT pixel 4 and TFT pixel 5 in have a pixel to there may be bad.
In conjunction with twice detection as a result, it is possible to judge TFT pixel 4 and TFT pixel 6 all without bad, because of
This voltage is 8V, then may infer that the voltage obtaining TFT pixel 5 is 6V.TFT pixel 5 and other
The difference of TFT pixel is (8V-6V)/8V=25%, owing to differing greatly, has determined whether TFT
Pixel 5 exists bad.
The embodiment of the present invention has the beneficial effect that: by the regulation spectroscopical angle of incidence of incident light beam strikes, make two
During secondary detection, the TFT pixel of each image sensor pixel group detection changes, same according to correspondence
Two testing results of one TFT pixel can determine that whether this TFT pixel exists bad, thus realizes height
The accurate detection of the bad TFT pixel in PPI pixel display product.
Embodiment three
Seeing Fig. 6, the embodiment of the present invention provides the pixel detection equipment 600 of a kind of array base palte, including:
Unit 601 is set, is used for setting in equal area, image sensor pixel group number and array base palte
The corresponding relation of the TFT number of pixels of upper colleague or same column, corresponding relation be 1:N, N for more than or etc.
In the integer of 2.
Side-play amount unit 602, for determining in n times detection action with corresponding relation, detects process each time
The spectroscopical incidence of incident light beam strikes during middle incident light beam strikes spectroscopical angle of incidence one-time detection earlier above
The side-play amount at angle.
Angle of incidence adjustment unit 603, is used for according to side-play amount during n times detect, and regulation is current incident
The incident spectroscopical angle of incidence of light, compares front one-time detection process, each CCD during making current detection
The position of the reflection received N number of TFT pixel corresponding to light translates a TFT pixel along prescribed direction.
Result identifying unit 604, during detecting according to n times, each image sensor pixel group gathers
Light intensity result, determines the position of bad TFT pixel.
Each unit specific implementation in the present embodiment is as follows:
Unit 601 is set and can pass through human-computer interaction interface, arrange in equal area, image sensor pixel
Go together on group number and array base palte or the corresponding relation of TFT number of pixels of same column, it is possible to be stored in and deposit
In reservoir (such as the memory space of hard disk, flash memory or programmable logic controller (PLC)), thus realize follow-up tune
With.This corresponding relation pre-set can also be stored in memorizer (such as hard disk, flash memory or able to programme patrol
Collect the memory space of controller) in, by arranging the selection of unit 601, set the corresponding relation needed,
From then by other cell calls.
Side-play amount unit 602 can be realized by central processing unit or programmable logic controller (PLC), central processing unit
Or programmable logic controller (PLC) hardware is according to the method set, and determines in n times detection action with corresponding relation,
During detection, during incident light beam strikes spectroscopical angle of incidence one-time detection earlier above, incident illumination enters each time
Penetrate the side-play amount of spectroscopical angle of incidence.The method of this setting is to be set in advance in central processing unit or able to programme
Program in logic controller.
Angle of incidence adjustment unit 603 can realize with the combination of software-driven hardware.For example, it is possible to carry
For expansion link and motor, expansion link connects light source, and angle of incidence adjustment unit 603 controls motor makes expansion link transport
It is dynamic, thus light source moves, it is achieved to make angle of incidence adjustment unit 603 can simply be and software realizes program,
And do not consider to be realized the adjustment of the spectroscopical angle of incidence of current incident light beam strikes by which kind of hardware.Similar,
Expansion link can also be connected with spectroscope 102 as shown in Figure 1, controls the deflection angle of spectroscope 102,
Thus realize the adjustment of the angle of incidence of current incident light beam strikes spectroscope 102.In actual application, have multiple firmly
Part coordinates to realize above-described embodiment with angle of incidence adjustment unit 603, does not repeats them here.
Result identifying unit 604 is equally realized by central processing unit or programmable logic controller (PLC), central authorities
Processor or programmable logic controller (PLC) gather according to each image sensor pixel group during n times detection
Light intensity result, calculates or judges the position of bad TFT pixel.
Preferably, angle of incidence adjustment unit 603, by adjusting the position of light source, regulate current incident illumination and enter
Penetrate spectroscopical angle of incidence.
Preferably, angle of incidence adjustment unit 603, by adjusting spectroscopical angle, regulate current incident illumination
Incident spectroscopical angle of incidence.
Preferably, detection equipment includes N number of light source, and the corresponding incidence corresponding to a side-play amount of each light source
Angle；
Angle of incidence adjustment unit 603, regulates current incident light beam strikes by the light source that application is different spectroscopical
Angle of incidence.
Preferably, result identifying unit 604, that obtain according to multiple image sensor pixel groups, include with
The light intensity result of one TFT pixel, determines the average voltage level that each light intensity result characterizes, if each averagely
Magnitude of voltage is unequal, it is determined that this TFT pixel is bad.
The embodiment of the present invention has the beneficial effect that: by the regulation spectroscopical angle of incidence of incident light beam strikes, make N
During secondary detection, the TFT pixel of each image sensor pixel group detection changes, same according to correspondence
N number of testing result of one TFT pixel can determine that whether this TFT pixel exists bad, thus realizes height
The accurate detection of the bad TFT pixel in PPI pixel display product.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these amendment and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprise these change and modification.
Claims (11)
1. the detection method of an array base palte, it is characterised in that including:
Preset in same area, image sensor pixel group number and array base palte go together or same column
The corresponding relation of TFT number of pixels, described corresponding relation be 1:N, N be the integer more than or equal to 2；
Determine in n times detection action with described corresponding relation, each time incident light beam strikes light splitting during detection
The side-play amount of the spectroscopical angle of incidence of incident light beam strikes during the angle of incidence of mirror one-time detection earlier above；
According to described side-play amount during n times detect, regulate the spectroscopical incidence of current incident light beam strikes
Angle, compares front one-time detection process during making current detection, each described image sensor pixel group receives
The position of the reflection N number of described TFT pixel corresponding to light translate a described TFT picture along prescribed direction
Element；
The light intensity result that during detecting according to n times, each described image sensor pixel group gathers, determines not
The position of good described TFT pixel.
2. the method for claim 1, it is characterised in that the current incident light beam strikes of described regulation divides
The angle of incidence of light microscopic, including:
By adjusting the position of light source, regulate the spectroscopical angle of incidence of current incident light beam strikes.
3. the method for claim 1, it is characterised in that the current incident light beam strikes of described regulation divides
The angle of incidence of light microscopic, including:
By adjusting spectroscope, regulate the spectroscopical angle of incidence of current incident light beam strikes.
4. the method for claim 1, it is characterised in that the current incident light beam strikes of described regulation divides
The angle of incidence of light microscopic, including:
N number of light source is set, and angle of incidence corresponding to side-play amount described in each light source correspondence one；
By the light source regulation spectroscopical angle of incidence of current incident light beam strikes that application is different.
5. the method as described in any one of Claims 1-4, it is characterised in that described prescribed direction is
Line direction；Or,
Described prescribed direction is column direction.
6. the method for claim 1, it is characterised in that described according to each during n times detection
The testing result that described image sensor pixel group obtains, determines the position of bad described TFT pixel, including:
That obtain according to multiple described image sensor pixel groups, include the light intensity of same described TFT pixel
As a result, determine the average voltage level that each described light intensity result characterizes, if each described average voltage level not phase
Deng, it is determined that this described TFT pixel is bad.
7. the pixel detection equipment of an array base palte, it is characterised in that including:
Unit is set, goes together or the TFT of same column on array base palte for setting image sensor pixel group
The corresponding relation of pixel, described corresponding relation be 1:N, N be the integer more than or equal to 2；
Side-play amount unit, for determining in n times detection action with described corresponding relation, detects process each time
The spectroscopical incidence of incident light beam strikes during middle incident light beam strikes spectroscopical angle of incidence one-time detection earlier above
The side-play amount at angle；
Angle of incidence adjustment unit, is used for according to described side-play amount during n times detect, and regulation is current incident
The incident spectroscopical angle of incidence of light, compares front one-time detection process, each described figure during making current detection
The position of the reflection that picture sensor pixel group receives N number of described TFT pixel corresponding to light is along prescribed direction
Translate a described TFT pixel；
Result identifying unit, during detecting according to n times, each described image sensor pixel group gathers
Light intensity result, determines the position of bad described TFT pixel.
8. equipment as claimed in claim 7, it is characterised in that described angle of incidence adjustment unit, passes through
Adjust the position of light source, regulate the spectroscopical angle of incidence of current incident light beam strikes.
9. equipment as claimed in claim 7, it is characterised in that described angle of incidence adjustment unit, passes through
Adjust spectroscope, regulate the spectroscopical angle of incidence of current incident light beam strikes.
10. equipment as claimed in claim 7, it is characterised in that described detection equipment includes N number of light source,
And angle of incidence corresponding to side-play amount described in each light source correspondence one；
Described angle of incidence adjustment unit, regulates current incident light beam strikes by the light source that application is different spectroscopical
Angle of incidence.
11. equipment as claimed in claim 7, it is characterised in that described result identifying unit, according to many
That individual described image sensor pixel group obtains, include the light intensity result of same described TFT pixel, determine
The average voltage level that each described light intensity result characterizes, if each described average voltage level is unequal, it is determined that
This described TFT pixel is bad.
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| CN201410370657.7A CN104157229B (en) | 2014-07-30 | 2014-07-30 | The detection method of a kind of array base palte and equipment |
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| JP6791034B2 (en) * | 2017-06-16 | 2020-11-25 | 株式会社Ｊｖｃケンウッド | Display system, video processing device, pixel-shifted display device, video processing method, display method, and program |
| CN115014724B (en) * | 2022-08-10 | 2022-11-22 | 歌尔光学科技有限公司 | System, method and device for testing diffraction light waveguide |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4247203A (en) * | 1978-04-03 | 1981-01-27 | Kla Instrument Corporation | Automatic photomask inspection system and apparatus |
| CN101487934A (en) * | 2009-02-10 | 2009-07-22 | 友达光电股份有限公司 | Optical detection apparatus and method |
| CN203606585U (en) * | 2013-10-30 | 2014-05-21 | 北京京东方光电科技有限公司 | Electrical detection equipment and array detection system |
-
2014
- 2014-07-30 CN CN201410370657.7A patent/CN104157229B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4247203A (en) * | 1978-04-03 | 1981-01-27 | Kla Instrument Corporation | Automatic photomask inspection system and apparatus |
| CN101487934A (en) * | 2009-02-10 | 2009-07-22 | 友达光电股份有限公司 | Optical detection apparatus and method |
| CN203606585U (en) * | 2013-10-30 | 2014-05-21 | 北京京东方光电科技有限公司 | Electrical detection equipment and array detection system |
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| CN104157229A (en) | 2014-11-19 |
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