CN104183682A - Flip-chip light-emitting diode element and packaging structure thereof - Google Patents

Flip-chip light-emitting diode element and packaging structure thereof Download PDF

Info

Publication number
CN104183682A
CN104183682A CN201310199969.1A CN201310199969A CN104183682A CN 104183682 A CN104183682 A CN 104183682A CN 201310199969 A CN201310199969 A CN 201310199969A CN 104183682 A CN104183682 A CN 104183682A
Authority
CN
China
Prior art keywords
layer
type semiconductor
semiconductor layer
conductive contact
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310199969.1A
Other languages
Chinese (zh)
Inventor
杨凯任
沈志秋
林裕承
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WEIFA HOLDINGS Co Ltd
Original Assignee
WEIFA HOLDINGS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WEIFA HOLDINGS Co Ltd filed Critical WEIFA HOLDINGS Co Ltd
Priority to CN201310199969.1A priority Critical patent/CN104183682A/en
Publication of CN104183682A publication Critical patent/CN104183682A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

The invention discloses a flip-chip light-emitting diode element and a packaging structure thereof. The flip-chip light-emitting diode element consists of a transparent substrate, a first type semiconductor layer, a second type semiconductor layer, a first conductive contact layer, a second conductive contact layer, an isolation layer, a protective layer, a fluorescence conversion layer and a balance electrode pattern layer. The isolation layer is formed between the first conductive contact layer and the second conductive contact layer; the protective layer is formed at the sides of the first type semiconductor layer, the second type semiconductor layer, the first conductive contact layer, and the second conductive contact layer; the fluorescence conversion layer covers the surface of the transparent substrate; and the balance electrode pattern layer is electrically connected to the first type semiconductor layer and the second type semiconductor layer, so that currents can be distributed uniformly. And the protective layer can protect the flip-chip light-emitting diode element from being damaged by the external force and the environment.

Description

Crystal-coated light-emitting diodes element and encapsulating structure thereof
Technical field
A kind of crystal-coated light-emitting diodes element and encapsulating structure thereof, refer in particular to a kind of crystal-coated light-emitting diodes element and encapsulating structure thereof with side protective layer and fluorescence conversion layer.
Background technology
The proposition of crystal-coated light-emitting diodes is that bright dipping is the not good problem of efficiency for electrode stops in order to solve in known luminescence diode structure; And the proposition of chip package technology is to calculate wafer for electrical tetchiness problem in order to solve traditional IC.When traditional IC crystal grain is packaged into wafer, need be through routing (Wire Bonding) step, but routing step not only can increase whole process complexity, and can derive extra inductive effect, therefore being suggested to cover brilliant keyset then, chip package technology replaces routing step.Follow-up have based on identical thinking, chip package technology is used for to crystal-coated light-emitting diodes, to obtain same effect.
Crystal-coated light-emitting diodes and printed circuit board (PCB) have multiple packing forms, below lift a common packing forms explanation.
Please refer to Fig. 1, Fig. 1 illustrates tradition and covers crystalline substance (flip chip) formula light-emitting diode encapsulating procedure flow chart.Tradition flip chip type light-emitting diode processing procedure comprises the following step: in step 101, upper wafer (wafer) the multiple crystal grain (die) 110 that form are expanded after crystalline substance, each crystal grain 110 intervals are strengthened, be beneficial to subsequent aspiration step; In step 102, utilize one first robotic arm 210 and vacuum slot 211 thereof that crystal grain 110 is taken off, on crystal grain 110 and there is projection (Bump) 111; In step 103, utilize the first robotic arm 210 to carry out crystal grain 110 and overturn; In step 104, after being reversed, crystal grain 110 follows successive process by one second robotic arm 220 and vacuum slot 221 thereof.In step 105, by 111 precise positionings of the projection on crystal grain 110 at a conductive junction point 121 covering on brilliant keyset (Board) 120; In step 106, heating projection 111, makes crystal grain 110 and covers brilliant keyset 120 to be electrically connected; In step 107, utilize dispensing technology fill crystal grain 110 and cover the space between brilliant keyset 120, the encapsulation that completes a wafer (chip) 130 is made; Now, conventionally need once toast again the packing material during with solidification point glue to wafer 130.So far, wafer 130 sides are a product that can directly use.When practical application, wafer 130 utilizes and covers default conductive structure on brilliant keyset 120, is electrically connected with the circuit on a printed circuit board (PCB) (PCB) again.
Recently in order to form high-power white light-emitting diode, wherein a kind of common method is for being used LED crystal particle to coordinate with fluorescence conversion layer, luminous by LED crystal particle itself, forms secondary excitation to fluorescence conversion layer, makes both luminous mutual collocation and forms white light.
In the encapsulation procedure disclosing at above-mentioned Fig. 1, if need utilize wafer 130 and the fluorescence conversion layer effect of carrying out light modulation of arrange in pairs or groups, in front case, just like shown in step 108, in packing material when fluorescent material is mixed in to glue, and packing material and phosphor mixture are covered on crystal grain 110.Make crystal grain 110 luminous through after fluorescent material, produce dimming effect.
In addition, also there are the crystal-coated light-emitting diodes crystal grain of other patterns and the method for packing of fluorescent material, for example crystal-coated light-emitting diodes crystal grain is placed in to a cup, again fluorescent material is poured into and in cup, covered crystal-coated light-emitting diodes crystal grain, and on crystal-coated light-emitting diodes crystal grain, form a fluorescence conversion layer.
But no matter which kind of mode, the formation of fluorescence conversion layer, all need be in last processing procedure, then inserts covering LED crystal particle, this causes the degree of freedom of processing procedure to be restricted.And need extra fluorescent powder packaging processing procedure, this also causes the rising of manufacturing cost.Moreover, do not there is the effects such as moisture-resistant gas, anti-oxidation, anti-external force due to LED wafer itself, therefore need to increase after back segment encapsulation procedure, could be combined with printed circuit board (PCB) and form final finished product.Also therefore, need additionally buy more routing die bond machine, cover the equipment such as brilliant machine and glue pouring machine.This not only causes the expenditure of extra cost, and causes the prolongation in man-hour, thereby causes production capacity to decline and cause the raising of fraction defective.
Summary of the invention
For addressing the above problem, the invention provides a kind of crystal-coated light-emitting diodes element and encapsulating structure thereof.Crystal-coated light-emitting diodes element, by the formation of lateral protection layer, can be protected crystal-coated light-emitting diodes element to avoid being subject to extraneous stress and environment (humiture, oxygen etc.) to destroy, and then extend crystal-coated light-emitting diodes component life.Moreover by protective layer and the design of large-area conductive contact layer collocation conductive pad, crystal-coated light-emitting diodes element itself can be exempted follow-up encapsulation procedure and can use separately, can significantly save manufacturing cost.
An aspect of of the present present invention is providing a kind of crystal-coated light-emitting diodes element, comprises one first type semiconductor layer, a Second-Type semiconductor layer, one first conductive contact layer, one second conductive contact layer, one first conductive pad, one second conductive pad, a separator, a protective layer, a fluorescence conversion layer and a counter electrode patterned layer.Second-Type semiconductor layer is formed in the first type semiconductor layer.The first conductive contact layer is formed in the first type semiconductor layer and does not contact Second-Type semiconductor layer, and the first conductive contact layer has an exposed surface.The first conductive pad is electrically connected on the first conductive contact layer.The second conductive contact layer is formed on Second-Type semiconductor layer, and the second conductive contact layer has an exposed surface.The second conductive pad is electrically connected on the first conductive contact layer.Separator is formed between the first conductive contact layer and the second conductive contact layer, so as to electrically isolated the first conductive contact layer and the second conductive contact layer.Protective layer is formed at the side of the first type semiconductor layer, Second-Type semiconductor layer, the first conductive contact layer and the second conductive contact layer.Fluorescence conversion layer covers a surface of the first type semiconductor layer.Counter electrode patterned layer is electrically connected the first type semiconductor layer and Second-Type semiconductor layer, even so as to making by the CURRENT DISTRIBUTION of crystal-coated light-emitting diodes element.Wherein, the area of the area of the first conductive pad and the second conductive pad is all greater than 10000 microns squares.
According to an embodiment, at least one surface and the side of fluorescence conversion layer protective mulch, and fluorescence conversion layer can comprise fluorescent material.In addition, protective layer can form an accommodation space with the first type semiconductor layer, for accommodating fluorescence conversion layer.In addition, fluorescence conversion layer can be a solid fluorescence sheet, and solid fluorescence sheet area is more than or equal to the first type semiconductor layer area.
Another aspect of the present invention is providing a kind of crystal-coated light-emitting diodes element, comprises a transparency carrier, one first type semiconductor layer, a Second-Type semiconductor layer, one first conductive contact layer, one second conductive contact layer, one first conductive pad, one second conductive pad, a separator, a protective layer and a counter electrode patterned layer.The first type semiconductor layer is formed on transparency carrier, and wherein transparency carrier area is greater than the first type semiconductor layer area.Second-Type semiconductor layer is formed in the first type semiconductor layer.The first conductive contact layer is formed in the first type semiconductor layer and does not contact Second-Type semiconductor layer, and the first conductive contact layer has an exposed surface.The first conductive pad is electrically connected on the first conductive contact layer.The second conductive contact layer is formed on Second-Type semiconductor layer, and the second conductive contact layer has an exposed surface.The second conductive pad is electrically connected on the second conductive contact layer.Separator is formed between the first conductive contact layer and the second conductive contact layer, so as to electrically isolated the first conductive contact layer and the second conductive contact layer.Protective layer is formed at the side of the first type semiconductor layer, Second-Type semiconductor layer, the first conductive contact layer and the second conductive contact layer.Counter electrode patterned layer is electrically connected the first type semiconductor layer and Second-Type semiconductor layer, even so as to making by the CURRENT DISTRIBUTION of crystal-coated light-emitting diodes element.Wherein, the area of the area of the first conductive pad and the second conductive pad is all greater than 10000 microns squares.
According to an embodiment, crystal-coated light-emitting diodes element also comprises a fluorescence conversion layer.Fluorescence conversion layer can cover a surface of transparency carrier, or covers at least one surface and the side of transparency carrier; And fluorescence conversion layer can comprise fluorescent material; Or fluorescence conversion layer is a solid fluorescence sheet, solid fluorescence sheet area is more than or equal to transparency carrier area.In addition, transparency carrier area is greater than the first type semiconductor layer area.In addition, crystal-coated light-emitting diodes element also can comprise a metallic reflector, is formed between Second-Type semiconductor layer and the second conductive pad.And the first conductive pad and the second conductive pad or the second conductive pad and the first conductive pad area ratio are 0.1:1 to 1:1.
Another aspect of the present invention is providing a kind of encapsulating structure of applying above-mentioned crystal-coated light-emitting diodes element, comprises a crystal-coated light-emitting diodes element, two knitting layers and a printed circuit board (PCB).Two knitting layers are formed at respectively in the first conductive pad and the first conductive pad.Printed circuit board (PCB) has one first circuit junction surface and the second circuit junction surface with respect to the first conductive pad and the second conductive bond pad position respectively, and makes the first circuit junction surface and second circuit junction surface be connected and electrically conduct with the first conductive pad and the second conductive pad respectively through two knitting layers.
According to an embodiment, the first circuit junction surface area and second circuit junction surface area sum total are less than or equal to 2 times of gross areas of crystal-coated light-emitting diodes element.In addition, first, second conductive pad and the first, second circuit junction surface are electrically connected and use a tin cream, and WU cream thickness is more than or equal to 20 microns, after bonding, tin cream climb glue height be less than crystal-coated light-emitting diodes element heights 30% or without climbing glue.
Brief description of the drawings
Fig. 1 illustrates traditional crystal-coated light-emitting diodes encapsulation procedure flow chart;
Fig. 2 illustrates the example structure schematic diagram according to crystal-coated light-emitting diodes element of the present invention;
Fig. 3 illustrates the embodiment schematic diagram according to counter electrode patterned layer in Fig. 2;
Fig. 4 illustrates another embodiment schematic diagram according to protective layer in Fig. 2 and fluorescence conversion layer combining structure;
Fig. 5 illustrates the embodiment schematic diagram again according to protective layer in Fig. 2 and fluorescence conversion layer combining structure;
Fig. 6 illustrates according to another example structure schematic diagram of crystal-coated light-emitting diodes element of the present invention;
Fig. 7 illustrates another embodiment schematic diagram according to protective layer in Fig. 6 and fluorescence conversion layer combining structure;
Fig. 8 illustrates the embodiment schematic diagram according to the encapsulating structure of crystal-coated light-emitting diodes element of the present invention;
Fig. 9 illustrates another embodiment schematic diagram according to the encapsulating structure of crystal-coated light-emitting diodes element in Fig. 8.
Embodiment
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the structural representation according to crystal-coated light-emitting diodes element 300 in one embodiment of the invention.Fig. 3 is according in Fig. 2, an embodiment schematic diagram of counter electrode patterned layer 311.In Fig. 2, crystal-coated light-emitting diodes element 300 comprises one first type semiconductor layer 301, a Second-Type semiconductor layer 302, one first conductive contact layer 303, one second conductive contact layer 304, a separator 305, a protective layer 306, a fluorescence conversion layer 307, one first conductive pad 308, one second conductive pad 309 and a counter electrode patterned layer 311 (please refer to Fig. 3).Second-Type semiconductor layer 302 is formed in the first type semiconductor layer 301, and the first conductive contact layer 303 is formed in the first type semiconductor layer 301 and does not contact Second-Type semiconductor layer 302.The second conductive contact layer 304 is formed on Second-Type semiconductor layer 302.
The first conductive contact layer 303 and the second conductive contact layer 304 respectively have an exposed surface, and one effect is for bonding with conducting resinl.Conducting resinl can use tin cream, and conducting resinl kind is unrestricted, can be various may forms for it.
Separator 305 is formed between the first conductive contact layer 303 and the second conductive contact layer 304, power supply sexual isolation the first conductive contact layer 303 and the second conductive contact layer 304.
Fluorescence conversion layer 307 covers a surperficial 301a of the first type semiconductor layer 301, uses it as the use of light modulation, makes crystal-coated light-emitting diodes element 300 can send different color light, for example, send white light.
In the present embodiment, the first conductive contact layer 303 and the second conductive contact layer 304 all have and expose quite on a large scale area.Whereby, contribute to LED heat radiating, also can be used as coating conducting resinl or the use for other bonding processing procedures.In addition, the first type semiconductor layer 301 can be a p-type semiconductor layer, and Second-Type semiconductor layer 302 can be a N-shaped semiconductor layer, or vice versa.The material of the first type semiconductor layer 301 and Second-Type semiconductor layer 302 can be the materials such as aluminum gallium arsenide, gallium arsenide phosphide compound, gallium phosphide, InGaP aluminium, InGaP aluminium, indium gallium nitride, gallium nitride, aluminum gallium phosphide, zinc selenide, carborundum.
Protective layer 306 can utilize the modes such as rotary coating (Spin Coating), evaporation or sputter, makes it be formed at the side of the first type semiconductor layer 301, Second-Type semiconductor layer 302, the first conductive contact layer 303 and the second conductive contact layer 304.Protective layer 306 objects, for to form a diaphragm in crystal-coated light-emitting diodes element 300 outsides, make crystal-coated light-emitting diodes element 300 avoid being subject to the impact of extraneous stress and environment (humiture, oxygen).In addition, due to the formation of protective layer 306, make crystal-coated light-emitting diodes element 300 itself can exempt follow-up complicated encapsulating encapsulation procedure and form the element that can use separately, not only saving cost, more increasing the flexibility of applying on processing procedure.
The first conductive pad 308 and the second conductive pad 309 are electrically connected with the first conductive contact layer 303 and the second conductive contact layer 304 respectively, can expand the bare area of the first conductive contact layer 303 and the second conductive contact layer 304 by the first conductive pad 308 and the second conductive pad 309, contribute to LED heat radiating, also can be used as coating conducting resinl or the use for other bonding processing procedures, make crystal-coated light-emitting diodes element 300 form independent used light-emitting component, and can coordinate follow-up package assembly (printed circuit board (PCB) or circuit base etc.) to use.The visual demand of the first conductive pad 308 and the second conductive pad 309 is adjusted size, and area ratio can be 0.1:1 to 1:1 each other between the two.The first conductive pad 308 areas and the second conductive pad 309 areas are all greater than 10000 microns squares; the protective layer 306 of arranging in pairs or groups again, makes crystal-coated light-emitting diodes element 300 form one without again can independent spendable light-emitting component via loaded down with trivial details processing procedures such as follow-up encapsulation.Need know in above-described embodiment, the first conductive contact layer 303 and the second conductive contact layer 304 have enough large bare area and can use with follow-up package assembly collocation separately, coordinate again the first conductive pad 308 and the second conductive pad 309, can increase the elasticity in use.
Counter electrode patterned layer 311 is electrically connected the first type semiconductor layer 301 and Second-Type semiconductor layer 302, and electric current is evenly distributed in the first type semiconductor layer 301 and Second-Type semiconductor layer 302, increases luminous efficiency.Counter electrode patterned layer 311 also can be electrically connected at crystal-coated light-emitting diodes element 300 own the first conductive contact layer 303 or the second conductive contact layer 304 individually or simultaneously, and can be electrically connected at individually or simultaneously the first conductive pad 308 and the second conductive pad 309.Counter electrode patterned layer 311 shapes also do not limited to, can random geometry for it.In one embodiment, counter electrode layer pattern layer 311 shape illustrate as Fig. 3.In Fig. 3, can see that counter electrode patterned layer 311 is electrically connected the first conductive contact layer 303 and the second conductive contact layer 304, it has fourchette shape extended structure, and the first conductive contact layer 303 and the second conductive contact layer 304 are also electrically connected the first conductive pad 308 and the second conductive pad 309.Whereby, can avoid CURRENT DISTRIBUTION too concentrated, make CURRENT DISTRIBUTION more even.
Please refer to Fig. 4, Fig. 4 illustrates another embodiment schematic diagram with fluorescence conversion layer 307 combining structures according to protective layer in Fig. 2 306.Luminous more even for making, fluorescence conversion layer 307 not only can be covered on the surperficial 301a of the first type semiconductor layer 301, also extending protective layer 306 sides that are covered in.Whereby, capable of regulating fluorescence conversion layer 307 is covered in the ratio of crystal-coated light-emitting diodes element 300, and obtains more uniform dimming effect.
Please refer to Fig. 5, Fig. 5 illustrates the embodiment schematic diagram again with fluorescence conversion layer 307 combining structures according to protective layer in Fig. 2 306.In the time making protective layer 306; make protective layer 306 protrude from the side of the first type semiconductor layer 301; so make formation one accommodation space 310 between protective layer 306 and the first type semiconductor layer 301; for accommodating fluorescence conversion layer 307; in an embodiment, can use fluorescent material to be filled in accommodation space 310 and formation fluorescence conversion layer 307 therein.Fluorescence conversion layer 307 also can use a solid fluorescence sheet, is arranged in accommodation space 310, can simplify whereby processing procedure.
Please refer to Fig. 6, Fig. 6 illustrates according to another example structure schematic diagram of crystal-coated light-emitting diodes element of the present invention.In Fig. 6, crystal-coated light-emitting diodes element 400 comprises a transparency carrier 410, one first type semiconductor layer 401, a Second-Type semiconductor layer 402, one first conductive contact layer 403, one second conductive contact layer 404, a separator 405, a protective layer 406, a fluorescence conversion layer 407, one first conductive pad 408, one second conductive pad 409 and a counter electrode patterned layer (not illustrating).The first type semiconductor layer 401 is formed on transparency carrier 410, and transparent base version 410 areas are greater than the first type semiconductor layer 401 areas.Second-Type semiconductor layer 402 is formed in the first type semiconductor layer 401, and the first conductive contact layer 403 is formed in the first type semiconductor layer 401 and does not contact Second-Type semiconductor layer 402.The second conductive contact layer 404 is formed on the second doping semiconductor layer 402.
The first conductive contact layer 403 and the second conductive contact layer 404 respectively have an exposed surface, and one effect is for bonding with conducting resinl.
Separator 405 is formed between the first conductive contact layer 403 and the second conductive contact layer 404, power supply sexual isolation the first conductive contact layer 403 and the second conductive contact layer 404.
Fluorescence conversion layer 407 covers a surperficial 410a of transparency carrier 410, uses it as the use of light modulation, makes crystal-coated light-emitting diodes element 400 can send different color light, for example, send white light.
Protective layer 406 can utilize the modes such as rotary coating (Spin Coating), evaporation or sputter, makes it be formed at the side of the first type semiconductor layer 401, Second-Type semiconductor layer 402, the first conductive contact layer 403 and the second conductive contact layer 404.Protective layer 406 objects, for to form a diaphragm in crystal-coated light-emitting diodes element 400 outsides, make crystal-coated light-emitting diodes element 400 avoid being subject to the impact of extraneous stress and environment (humiture, oxygen).In addition, due to the formation of protective layer 406, make crystal-coated light-emitting diodes element 400 itself can exempt follow-up complicated encapsulating encapsulation procedure and form the element that can use separately, not only saving cost, more increasing the flexibility of applying on processing procedure.
In above-mentioned crystal-coated light-emitting diodes element 400, can set up one first conductive pad 408 and one second conductive pad 409 is electrically connected with the first conductive contact layer 403 and the second conductive contact layer 404 respectively, can expand the bare area of the first conductive contact layer 403 and the second conductive contact layer 404 by the first conductive pad 408 and the second conductive pad 409, contribute to LED heat radiating, also can be used as coating conducting resinl or the use for other bonding processing procedures, and make crystal-coated light-emitting diodes element 400 form independent used light-emitting component, can coordinate follow-up package assembly (printed circuit board (PCB) or circuit base etc.) to use.The visual demand of the first conductive pad 408 and the second conductive pad 409 is adjusted size, and area ratio can be 0.1:1 to 1:1 each other between the two.The first conductive pad 408 areas and the second conductive pad 409 areas are all greater than 10000 microns squares; the protective layer 406 of arranging in pairs or groups again, makes crystal-coated light-emitting diodes element 400 form one without again can independent spendable light-emitting component via loaded down with trivial details processing procedures such as follow-up encapsulation.As aforesaid embodiment, the first conductive contact layer 403 and the second conductive contact layer 404 have enough large bare area and can use with follow-up package assembly collocation separately, coordinate again the first conductive pad 408 and the second conductive pad 409, can increase the elasticity in use.
Counter electrode patterned layer is electrically connected the first type semiconductor layer 401 and Second-Type semiconductor layer 402, and electric current is evenly distributed in the first type semiconductor layer 401 and Second-Type semiconductor layer 402, increases luminous efficiency.In this embodiment, the counter electrode patterned layer 311 of the structure of counter electrode patterned layer and previous embodiment is similar, no longer separately states.
In addition, in above-mentioned crystal-coated light-emitting diodes element 400, can between the second conductive contact layer 404 and the second conductive pad 409, set up a metallic reflector 411, can increase light extraction efficiency.
Please refer to Fig. 7, Fig. 7 illustrates another embodiment schematic diagram with fluorescence conversion layer 407 combining structures according to protective layer in Fig. 6 406.Luminous more even for making, fluorescence conversion layer 407 not only can be covered on the surperficial 410a of transparency carrier 410, also extending transparency carrier 410 sides that are covered in.Whereby, capable of regulating fluorescence conversion layer 407 is covered in the ratio of crystal-coated light-emitting diodes element 400, and obtains more uniform dimming effect.In addition, fluorescence conversion layer 407 can use a solid fluorescence sheet, and its area is greater than transparency carrier 410 areas.Whereby, can save tradition and use manufacture procedure of adhesive numerous and diverse when fluorescent material, increase the facility on processing procedure.
Please refer to Fig. 8, Fig. 8 illustrates the embodiment schematic diagram according to the encapsulating structure 500 of crystal-coated light-emitting diodes element 400 of the present invention.In Fig. 6, crystal-coated light-emitting diodes element 400 itself is a light-emitting component can be used alone.In the present embodiment, disclose the encapsulating structure 500 of crystal-coated light-emitting diodes element 400 and printed circuit board (PCB) 501 combinations, notice crystal-coated light-emitting diodes element 400 also can be combined with other forms of substrate, is not limited with printed circuit board (PCB).Crystal-coated light-emitting diodes element 400 has one first conductive pad 408 and one second conductive pad 409.On printed circuit board (PCB) 501, there is one first circuit junction surface 502a and a second circuit junction surface 502b, correspond to respectively the position of the first conductive pad 408 and the second conductive pad 409.For making crystal-coated light-emitting diodes element 400 can be connected conducting with printed circuit board (PCB) 501, respectively between the first conductive pad 408 and the first circuit junction surface 502a, and be provided with a knitting layer 503 between the second conductive pad 409 and second circuit junction surface 502b.Juncture that knitting layer 503 uses can be any modes such as eutectic, conducting resinl, projection or tin cream processing procedure.In this embodiment, when the knitting layer 503 that the first conductive pad 408 and the second conductive pad 409 and the first circuit junction surface 502a and second circuit junction surface 502b are electrically connected uses tin cream, WU cream thickness is more than or equal to 20 microns, and after bonding, tin cream climb glue height be less than crystal-coated light-emitting diodes element 400 height 30% or without climbing glue.
Please refer to Fig. 9, Fig. 9 illustrates another embodiment schematic diagram according to the encapsulating structure 500 of crystal-coated light-emitting diodes element 400 in Fig. 8.In Fig. 9, the first circuit junction surface 502a and second circuit junction surface 502b area sum total are less than or equal to 2 times of gross areas of crystal-coated light-emitting diodes element 400.
The crystal-coated light-emitting diodes element (300,400) disclosing in above-described embodiment; in wafer production process; utilize the steps such as deposition, exposure, development, etching, form in order to the first conductive contact layer as positive and negative electrode (303,403), the second conductive contact layer (304,404), separator 305 and protective layer 306.Then, more just can become the light emitting element structure that can independently use after cutting, and known crystal-coated light-emitting diodes is because of the design without separator 305 and protective layer 306, still cannot use separately with naked crystalline form.Whereby, crystal-coated light-emitting diodes element of the present invention (300,400) can be saved step and the relevant expensive device such as expansion crystalline substance, upset, transposition, microwave, some glue and the baking in traditional flip chip assembly process, can significantly save manufacturing cost.In addition, also can save the time consumption that in known crystal-coated light-emitting diodes encapsulation procedure, complex steps causes, and then promote production capacity.
In sum, the invention provides a kind of crystal-coated light-emitting diodes element and encapsulating structure thereof.Crystal-coated light-emitting diodes element of the present invention has following advantages:
1. there is large electrode structure, can increase heat radiation, reduce light decay problem.
2. there is the protective layer of side, can strengthen crystal-coated light-emitting diodes element and avoid external stress and environmental impact and increase reliability, reliability, and then increase the life-span of crystal-coated light-emitting diodes element.
3. the first conductive contact layer and the second conductive contact interlayer are provided with separator, can be used as electrically isolated use.
4. on protective layer structure, can there are various different designs, can obtain different dimming effects from the collocation of fluorescence conversion layer; And can simplify fluorescence conversion layer encapsulation procedure, reduce extras cost.
5. the silicon wafer process stage directly forms the crystal-coated light-emitting diodes element can be used alone, and can exempt follow-up complicated encapsulation procedure, and then can reduce the unnecessary investment of sealed in unit, significantly saves manufacturing cost.
6. large electrode can use eutectic, conducting resinl, projection or tin cream processing procedure that crystal-coated light-emitting diodes element is connected and conducting with printed circuit board (PCB).
7. can set up counter electrode patterned layer, make CURRENT DISTRIBUTION more even, increase luminous efficiency.

Claims (12)

1. a crystal-coated light-emitting diodes element, is characterized in that, comprises:
One first type semiconductor layer;
One Second-Type semiconductor layer, is formed in this first type semiconductor layer;
One first conductive contact layer, is formed in this first type semiconductor layer and does not contact this Second-Type semiconductor layer, and wherein this first conductive contact layer has an exposed surface;
One first conductive pad, is electrically connected on this first conductive contact layer;
One second conductive contact layer, is formed on this Second-Type semiconductor layer, and this second conductive contact layer has an exposed surface;
One second conductive pad, is electrically connected on this second conductive contact layer;
One separator, is formed between this first conductive contact layer and this second conductive contact layer, so as to electrically isolated this first conductive contact layer and this second conductive contact layer;
One protective layer, this protective layer is formed at the side of this first type semiconductor layer, this Second-Type semiconductor layer, this first conductive contact layer and this second conductive contact layer;
One fluorescence conversion layer, this fluorescence conversion layer covers a surface of this first type semiconductor layer; And
One counter electrode patterned layer, is electrically connected this first type semiconductor layer and this Second-Type semiconductor layer, even so as to making by the CURRENT DISTRIBUTION of this crystal-coated light-emitting diodes element;
Wherein, the area of the area of this first conductive pad and this second conductive pad is all greater than 10000 microns squares.
2. according to the crystal-coated light-emitting diodes element of claim 1, it is characterized in that, this fluorescence conversion layer covers at least one surface and the side of this protective layer.
3. according to the crystal-coated light-emitting diodes element of claim 1, it is characterized in that, this fluorescence conversion layer comprises fluorescent material or solid fluorescence sheet, and this solid fluorescence sheet area is more than or equal to this first type semiconductor layer area.
4. according to the crystal-coated light-emitting diodes element of claim 1, it is characterized in that, this protective layer and this first type semiconductor layer form an accommodation space, for accommodating this fluorescence conversion layer.
5. according to the crystal-coated light-emitting diodes element of claim 1, it is characterized in that, also comprise:
One transparency carrier, is formed in this first type semiconductor layer, and wherein this transparency carrier area is greater than this first type semiconductor layer area.
6. a crystal-coated light-emitting diodes element, is characterized in that, comprises:
One transparency carrier;
One first type semiconductor layer, is formed on this transparency carrier, and wherein this transparency carrier area is greater than this first type semiconductor layer area;
One Second-Type semiconductor layer, is formed in this first type semiconductor layer;
One first conductive contact layer, is formed in this first type semiconductor layer and does not contact this Second-Type semiconductor layer, and wherein this first conductive contact layer has an exposed surface;
One first conductive pad, is electrically connected on this first conductive contact layer;
One second conductive contact layer, is formed on this Second-Type semiconductor layer, and this second conductive contact layer has an exposed surface;
One second conductive pad, is electrically connected on this second conductive contact layer;
One separator, is formed between this first conductive contact layer and this second conductive contact layer, so as to electrically isolated this first conductive contact layer and this second conductive contact layer;
One protective layer, this protective layer is formed at the side of this first type semiconductor layer, this Second-Type semiconductor layer, this first conductive contact layer and this second conductive contact layer; And
One counter electrode patterned layer, is electrically connected this first type semiconductor layer and this Second-Type semiconductor layer, even so as to making by the CURRENT DISTRIBUTION of this crystal-coated light-emitting diodes element;
Wherein, the area of the area of this first conductive pad and this second conductive pad is all greater than 10000 microns squares.
7. according to the crystal-coated light-emitting diodes element of claim 6, it is characterized in that, also comprise:
One fluorescence conversion layer, this fluorescence conversion layer covers a surface of this transparency carrier or covers at least one surface and the side of this transparency carrier;
Wherein, this fluorescence conversion layer comprises fluorescent material or solid fluorescence sheet, and this solid fluorescence sheet area is more than or equal to this transparency carrier area.
8. according to the crystal-coated light-emitting diodes element of claim 6, it is characterized in that, this first conductive pad and this second conductive pad or this second conductive pad and this first conductive pad area ratio are 0.1:1 to 1:1.
9. according to the crystal-coated light-emitting diodes element of claim 6, it is characterized in that, also comprise:
One metallic reflector, is formed between this Second-Type semiconductor layer and this second conductive pad.
10. an encapsulating structure for application crystal-coated light-emitting diodes element as claimed in claim 6, is characterized in that, comprises:
One crystal-coated light-emitting diodes element;
Two knitting layers, are formed at respectively in this first conductive pad and this second conductive pad of this crystal-coated light-emitting diodes element; And
One printed circuit board (PCB), this printed circuit board (PCB) has one first circuit junction surface and the second circuit junction surface with respect to this first conductive pad and this second conductive bond pad position respectively, wherein sees through this two knitting layer and makes this first, second circuit junction surface be connected and electrically conduct with this first, second conductive pad respectively.
11. according to the encapsulating structure of claim 10, it is characterized in that, this first circuit junction surface and this second circuit junction surface area sum total are less than or equal to 2 times of gross areas of this crystal-coated light-emitting diodes element.
12. according to the encapsulating structure of claim 10, it is characterized in that, the knitting layer that this first, second conductive pad and this first, second circuit junction surface are electrically connected uses a tin cream, and this WU cream thickness is more than or equal to 20 microns, and after bonding, this tin cream climb glue height be less than this crystal-coated light-emitting diodes element heights 30% or without climbing glue.
CN201310199969.1A 2013-05-27 2013-05-27 Flip-chip light-emitting diode element and packaging structure thereof Pending CN104183682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310199969.1A CN104183682A (en) 2013-05-27 2013-05-27 Flip-chip light-emitting diode element and packaging structure thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310199969.1A CN104183682A (en) 2013-05-27 2013-05-27 Flip-chip light-emitting diode element and packaging structure thereof

Publications (1)

Publication Number Publication Date
CN104183682A true CN104183682A (en) 2014-12-03

Family

ID=51964583

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310199969.1A Pending CN104183682A (en) 2013-05-27 2013-05-27 Flip-chip light-emitting diode element and packaging structure thereof

Country Status (1)

Country Link
CN (1) CN104183682A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105226177A (en) * 2015-10-13 2016-01-06 厦门市三安光电科技有限公司 The eutectic electrode structure of flip LED chips and flip LED chips
CN106816513A (en) * 2015-11-30 2017-06-09 讯芯电子科技(中山)有限公司 The encapsulating structure and its manufacture method of LED chip
CN108022941A (en) * 2016-11-01 2018-05-11 群创光电股份有限公司 Display device and forming method thereof
CN110444558A (en) * 2019-01-04 2019-11-12 友达光电股份有限公司 Light emitting device and its manufacturing method
CN111864025A (en) * 2019-04-30 2020-10-30 云谷(固安)科技有限公司 Micro light-emitting diode, manufacturing method thereof and display device
CN111916534A (en) * 2019-05-07 2020-11-10 錼创显示科技股份有限公司 Micro-element
US11362239B2 (en) 2019-05-07 2022-06-14 PlayNitride Display Co., Ltd. Micro device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
CN101582474B (en) * 2008-05-15 2011-06-29 艾比维利股份有限公司 Semiconductor light emitting device
CN102280553A (en) * 2010-06-10 2011-12-14 杨秋忠 Flip-chip light emitting diode crystal grain and crystal grain array thereof
CN202434560U (en) * 2011-12-31 2012-09-12 深圳市瑞丰光电子股份有限公司 Fluorescent glue film molding device
TW201244183A (en) * 2011-01-28 2012-11-01 Seoul Opto Device Co Ltd Wafer level LED package and method of fabricating the same
CN202549925U (en) * 2012-05-02 2012-11-21 茂邦电子有限公司 Light-emitting diode package and used PCB (Printed Circuit Board) type heat radiating base board

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
CN101582474B (en) * 2008-05-15 2011-06-29 艾比维利股份有限公司 Semiconductor light emitting device
CN102280553A (en) * 2010-06-10 2011-12-14 杨秋忠 Flip-chip light emitting diode crystal grain and crystal grain array thereof
TW201244183A (en) * 2011-01-28 2012-11-01 Seoul Opto Device Co Ltd Wafer level LED package and method of fabricating the same
CN202434560U (en) * 2011-12-31 2012-09-12 深圳市瑞丰光电子股份有限公司 Fluorescent glue film molding device
CN202549925U (en) * 2012-05-02 2012-11-21 茂邦电子有限公司 Light-emitting diode package and used PCB (Printed Circuit Board) type heat radiating base board

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105226177A (en) * 2015-10-13 2016-01-06 厦门市三安光电科技有限公司 The eutectic electrode structure of flip LED chips and flip LED chips
US10297736B2 (en) * 2015-10-13 2019-05-21 Xiamen Sanan Optoelectronics Technology Co., Ltd. Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
US10916688B2 (en) * 2015-10-13 2021-02-09 Xiamen Sanan Optoelectronics Technology Co., Ltd. Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
CN106816513A (en) * 2015-11-30 2017-06-09 讯芯电子科技(中山)有限公司 The encapsulating structure and its manufacture method of LED chip
CN106816513B (en) * 2015-11-30 2019-06-28 讯芯电子科技(中山)有限公司 The encapsulating structure and its manufacturing method of LED chip
CN108022941A (en) * 2016-11-01 2018-05-11 群创光电股份有限公司 Display device and forming method thereof
CN110444558A (en) * 2019-01-04 2019-11-12 友达光电股份有限公司 Light emitting device and its manufacturing method
CN111864025A (en) * 2019-04-30 2020-10-30 云谷(固安)科技有限公司 Micro light-emitting diode, manufacturing method thereof and display device
CN111916534A (en) * 2019-05-07 2020-11-10 錼创显示科技股份有限公司 Micro-element
US11362239B2 (en) 2019-05-07 2022-06-14 PlayNitride Display Co., Ltd. Micro device
CN111916534B (en) * 2019-05-07 2022-06-21 錼创显示科技股份有限公司 Micro-element

Similar Documents

Publication Publication Date Title
CN104183682A (en) Flip-chip light-emitting diode element and packaging structure thereof
EP2515353B1 (en) Light emitting diode package
US8878205B2 (en) Light emitting diode wafer-level package with self-aligning features
CN102751274A (en) Three-dimensionally wrapped packaged LED (Light Emitting Diode) chip
CN201904369U (en) LED (light emitting diode) surface-mounting package structure based on silicon substrate
CN202067790U (en) LED encapsulation structure for silicon through hole of wafer-level glass cavity
CN104393154A (en) Wafer level packaging method for LED (Light-Emitting Diode) chip level white light source
CN104465895A (en) Led chip and manufacturing method thereof
CN104282676A (en) Integrated LED lamp panel packaging structure and technology
CN103618041B (en) A kind of LED encapsulation structure of esd protection and method for packing thereof
CN103236490B (en) LED flip chip packaging, its manufacture method and use its encapsulating structure
CN201904368U (en) LED (light emitting diode) surface-mounting package structure based on silicon substrate integrated with functional circuit
TW201244178A (en) LED package and method for manufacturing the same
EP3491678B1 (en) Light emitting device package with reflective side coating
CN102280553A (en) Flip-chip light emitting diode crystal grain and crystal grain array thereof
TWI548124B (en) Flip chip light emitting device and package structure thereof
US11189769B2 (en) Light emitting device package with reflective side coating
CN203445154U (en) LED flip chip packaging device and packaging structure using same
CN102214652B (en) LED (light emitting diode) packaging structure and preparation method thereof
TWI565101B (en) Light emitting diode package and method for forming the same
CN102832330B (en) Wafer level LED packaging structure
CN105990498A (en) Chip package structure and method of manufacturing the same
CN206194789U (en) Chip scale package LED
CN206271704U (en) Realize the wafer-level packaging of ultra-thin ambient light and proximity transducer
TW201145563A (en) Flip chip LED die and array thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20141203