CN104218440A - Internal frequency doubling ultraviolet laser of semiconductor side pump cavity - Google Patents
Internal frequency doubling ultraviolet laser of semiconductor side pump cavity Download PDFInfo
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- CN104218440A CN104218440A CN201410481679.0A CN201410481679A CN104218440A CN 104218440 A CN104218440 A CN 104218440A CN 201410481679 A CN201410481679 A CN 201410481679A CN 104218440 A CN104218440 A CN 104218440A
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Abstract
The invention provides an internal frequency doubling ultraviolet laser of a semiconductor side pump cavity. The internal frequency doubling ultraviolet laser of the semiconductor side pump cavity comprises a folded resonant cavity, a Q switch, a semiconductor side pumping module, a frequency summing crystal, a wave plate and a frequency doubling crystal, wherein the folded resonant cavity is composed of a front end reflector, a folded reflector and a rear end reflector, the Q switch is placed close to the front end reflector, the semiconductor side pumping module is placed close to the Q switch, the frequency doubling crystal is placed close to the rear end reflector, the wave plate is placed close to the frequency doubling crystal, and the frequency summing crystal is placed close to the wave plate. The internal frequency doubling ultraviolet laser of the semiconductor side pump cavity is simple in structure, high in power and high in stability.
Description
Technical field
The present invention relates to a kind of laser equipment, particularly a kind of semiconductor side pumping intracavity double frequency ultraviolet laser.
Background technology
The output wave length of ultraviolet laser, material effects power is strong, and resolution is high, and focus point can be little of several micron number magnitude, and at semiconductor applications, material retrofit, the fields such as the outer solidification such as ultra-violet curing have had applies widely.But because Ultra-Violet Laser relates to complicated secondary frequency multiplication technology and the light conversion efficiency problem caused thus and stability problem, people utilize various Method and Technology to realize ultraviolet laser.The technology of main employing has: cavity external frequency multiplication and intracavity frequency doubling mode.Two kinds of modes respectively have pluses and minuses: cavity external frequency multiplication technical stability is slightly good, but conversion efficiency is low; Otherwise intracavity frequency doubling is firm.Cavity external frequency multiplication high-power pulsed infrared laser light can be crossed a focusing system realize frequency inverted by nonlinear crystal.This method requires that focus point spot size is little, and therefore crystal ratio is easier to damage, high to the requirement of crystal coating.Change place need be carried out after certain on probation time thus realize the long-time reliably working of crystal.This technology has very strict requirement to the control that crystalline substance is stopped, total more complicated, this considerably increases laser cost.Intracavity frequency doubling mode by insertion one be coated with multi-wavelength eyeglass or and frequently crystal one end with cut at Brewster angle by outside Ultra-Violet Laser export cavity.The non linear coefficient of traditional frequency-doubling crystal is little, transforms and needs longer crystal to cause warm width and poor beam quality to obtain high frequency multiplication thus have impact on the quality of ultraviolet laser.
Summary of the invention
The technical problem to be solved in the present invention, be to provide a kind of semiconductor side pumping intracavity double frequency ultraviolet laser, structure is simple, power is high, stability is high.
The present invention is achieved in that a kind of semiconductor side pumping intracavity double frequency ultraviolet laser, comprise fold resonator, Q switching, semiconductor side pump module and frequency crystal, wave plate, frequency-doubling crystal, described fold resonator is made up of front end reflection mirror, folding mirror and back end reflective mirror, described Q switching is placed near front end reflection mirror, described semiconductor side pump module is placed near Q switching, frequency-doubling crystal is placed near back end reflective mirror, wave plate is placed near frequency-doubling crystal, and frequency crystal is placed near wave plate.
Further, in there being angle between described front end reflection mirror and folding mirror, in there being angle between described back end reflective mirror and folding mirror, and described front end reflection mirror and described back end reflective mirror are positioned at the homonymy of folding mirror.
Further, angle≤8 ° between described front end reflection mirror and folding mirror, angle≤8 ° between described back end reflective mirror and folding mirror.
Further, described front end reflection mirror and folding mirror plate 1064nm fundamental frequency light and to be all-trans film, and described back end reflective mirror plating 1064nm fundamental frequency light and 532nm frequency doubled light are all-trans film.
Further, described semiconductor side pump module is Nd:YVO4 laser crystal or Nd:YAG laser crystal, and the two ends of described Nd:YVO4 laser crystal or Nd:YAG laser crystal are with cut at Brewster angle.
Further, described frequency-doubling crystal is MgO:PPSLT crystal, and frequency-doubling crystal two ends plating 1064nm fundamental frequency light and 532nm frequency doubled light anti-reflection film.
Further, the relative fundamental frequency light of described wave plate is full-wave plate, frequency doubled light is 1/2 wave plate, realizes frequency doubled light and converts S polarised light to from P polarised light.
Further, the described and lbo crystal of crystal employing frequently II class matching way, and 1064nm fundamental frequency light and 532nm frequency doubled light anti-reflection film are plated in one end of frequency crystal, crystal one end is with cut at Brewster angle.
Further, described Q switching is acoustooptic Q-switching or electro-optical Q-switch.
Tool of the present invention has the following advantages: semiconductor side pumping intracavity double frequency ultraviolet laser of the present invention adopts fold resonator structure and uses wave plate, to make in chamber the P polarization 1064nm fundamental frequency light of vibration the mode of mistake quasi-phase matched can produce the 532nm frequency doubled light of same polarization direction by frequency-doubling crystal, fundamental frequency light and frequency doubled light are by after wave plate, fundamental frequency light polarization is constant, and frequency doubled light polarization direction 90-degree rotation becomes S polarization.P polarization fundamental frequency light and S polarization frequency doubled light by and frequently crystal II class matching way produce the 355nm Ultra-Violet Laser of polarization, 355nm Ultra-Violet Laser by one end with cut at Brewster angle with outside frequency crystal export cavity.Overall structure is simple, power is high, stability is high.
Accompanying drawing explanation
The present invention is further illustrated in conjunction with the embodiments with reference to the accompanying drawings.
Fig. 1 is the inventive method flowchart.
Embodiment
As shown in Figure 1, semiconductor side pumping intracavity double frequency ultraviolet laser of the present invention, comprise fold resonator, Q switching 2, semiconductor side pump module 3 and frequency crystal 4, wave plate 5, frequency-doubling crystal 6, described fold resonator is made up of front end reflection mirror 11, folding mirror 12 and back end reflective mirror 13, described Q switching 2 is placed near front end reflection mirror 11, described semiconductor side pump module 3 is placed near Q switching 2, frequency-doubling crystal 4 is placed near back end reflective mirror 13, wave plate 5 is placed near frequency-doubling crystal 6, and frequency crystal 4 is placed near wave plate 5.
In there being angle between described front end reflection mirror 11 and folding mirror 12, wherein this angle is advisable with≤8 °, in there being angle between described back end reflective mirror 13 and folding mirror 12, wherein this angle is advisable with≤8 °, and described front end reflection mirror 11 and described back end reflective mirror 13 are positioned at the homonymy of folding mirror 12.1064nm fundamental frequency light of plating described front end reflection mirror 11 and folding mirror 12 is all-trans film, and described back end reflective mirror 13 plates 1064nm fundamental frequency light and 532nm frequency doubled light and to be all-trans film.
Described semiconductor side pump module 3 is Nd:YVO4 laser crystal or Nd:YAG laser crystal, and the two ends of described Nd:YVO4 laser crystal or Nd:YAG laser crystal are with cut at Brewster angle.Brewster's angle θ p=Arctan (n2/n1), n2 and n1 are fundamental frequency light relative to the refractive index of described laser crystal and air.When select two ends with the Nd:YAG laser crystal of cut at Brewster angle as semiconductor side pump module 3 time, the Nd3+ concentration of Nd:YAG laser crystal is the diameter of 1%, Nd:YAG laser crystal is 1.6mm, and length is 63.5mm.
Described frequency-doubling crystal 6 is quasi-phase-matching crystals periodically poled structure in nearly-stoichiometric MgO-doped LiTaO3 (MgO:PPSLT) crystal, and frequency-doubling crystal 6 two ends plating 1064nm fundamental frequency light and 532nm frequency doubled light anti-reflection film.The polarization cycle of frequency-doubling crystal 6 is 8 microns, and thickness is 1mm, and wide is 2mm, because the non linear coefficient that this frequency-doubling crystal 6 is large is d33=13.8pm/v (being greater than lbo crystal 10 times), length selects 2mm, and phase matched optimum temperature is at about 40 DEG C, and work Wen Kuanwei 10 DEG C.
The relative fundamental frequency light of described wave plate 5 is full-wave plate, frequency doubled light is 1/2 wave plate, and wave plate placed angle is that optical axis becomes 45 degree with P polarization direction, realizes frequency doubled light and converts S polarised light to from P polarised light.
Described and frequency crystal 4 adopts lbo crystal, matching way is II class matching way, with one end plating 1064nm fundamental frequency light and the 532nm frequency doubled light anti-reflection film of frequency crystal, crystal one end is with cut at Brewster angle, Brewster's angle θ p=Arctan (n2/n1), n2 and n1 are that fundamental frequency light is relative to the refractive index with frequency crystal and air.
Described Q switching 2 is acoustooptic Q-switching or electro-optical Q-switch, concrete adopts acoustooptic Q-switching or electro-optical Q-switch depends on application.
In addition, the semiconductor side pump module in the present invention can by the work of conduction water-cooling pattern, and frequency-doubling crystal and sum of fundamental frequencies crystal are by the two-way accurate temperature controlling of semiconductor refrigerating sheet mode.Precision is within 0.02.
The operation principle of semiconductor side pumping intracavity double frequency ultraviolet laser of the present invention: adopt fold resonator structure and use wave plate, to make in chamber the P polarization 1064nm fundamental frequency light A of vibration the mode of mistake quasi-phase matched can produce the 532nm frequency doubled light B of same polarization direction by frequency-doubling crystal 6, fundamental frequency light A and frequency doubled light B is by after wave plate 5, fundamental frequency light A polarization is constant, and frequency doubled light B polarization direction 90-degree rotation becomes S polarization.P polarization fundamental frequency light A and S polarization frequency doubled light B by and the II class matching way of frequently crystal 4 produce the 355nm Ultra-Violet Laser C of polarization, 355nm Ultra-Violet Laser C by one end with cut at Brewster angle with outside frequency crystal export cavity.Overall structure is simple, power is high, stability is high.
Although the foregoing describe the specific embodiment of the present invention; but be familiar with those skilled in the art to be to be understood that; specific embodiment described by us is illustrative; instead of for the restriction to scope of the present invention; those of ordinary skill in the art, in the modification of the equivalence done according to spirit of the present invention and change, should be encompassed in scope that claim of the present invention protects.
Claims (9)
1. a semiconductor side pumping intracavity double frequency ultraviolet laser, it is characterized in that: comprise fold resonator, Q switching, semiconductor side pump module and frequency crystal, wave plate, frequency-doubling crystal, described fold resonator is made up of front end reflection mirror, folding mirror and back end reflective mirror, described Q switching is placed near front end reflection mirror, described semiconductor side pump module is placed near Q switching, frequency-doubling crystal is placed near back end reflective mirror, wave plate is placed near frequency-doubling crystal, and frequency crystal is placed near wave plate.
2. semiconductor side pumping intracavity double frequency ultraviolet laser according to claim 1, it is characterized in that: in there being angle between described front end reflection mirror and folding mirror, in there being angle between described back end reflective mirror and folding mirror, and described front end reflection mirror and described back end reflective mirror are positioned at the homonymy of folding mirror.
3. semiconductor side pumping intracavity double frequency ultraviolet laser according to claim 2, is characterized in that: angle≤8 ° between described front end reflection mirror and folding mirror, angle≤8 ° between described back end reflective mirror and folding mirror.
4. the semiconductor side pumping intracavity double frequency ultraviolet laser according to any one of claims 1 to 3, it is characterized in that: described front end reflection mirror and folding mirror plate 1064nm fundamental frequency light and to be all-trans film, described back end reflective mirror plating 1064nm fundamental frequency light and 532nm frequency doubled light are all-trans film.
5. semiconductor side pumping intracavity double frequency ultraviolet laser according to claim 1, it is characterized in that: described semiconductor side pump module is Nd:YVO4 laser crystal or Nd:YAG laser crystal, and the two ends of described Nd:YVO4 laser crystal or Nd:YAG laser crystal are with cut at Brewster angle.
6. semiconductor side pumping intracavity double frequency ultraviolet laser according to claim 1, is characterized in that: described frequency-doubling crystal is MgO:PPSLT crystal, and frequency-doubling crystal two ends plating 1064nm fundamental frequency light and 532nm frequency doubled light anti-reflection film.
7. semiconductor side pumping intracavity double frequency ultraviolet laser according to claim 1, is characterized in that: the relative fundamental frequency light of described wave plate is full-wave plate, frequency doubled light is 1/2 wave plate, realizes frequency doubled light and converts S polarised light to from P polarised light.
8. semiconductor side pumping intracavity double frequency ultraviolet laser according to claim 1, it is characterized in that: the described and lbo crystal of crystal employing frequently II class matching way, with one end plating 1064nm fundamental frequency light and the 532nm frequency doubled light anti-reflection film of frequency crystal, crystal one end is with cut at Brewster angle.
9. semiconductor side pumping intracavity double frequency ultraviolet laser according to claim 1, is characterized in that: described Q switching is acoustooptic Q-switching or electro-optical Q-switch.
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| CN201410481679.0A CN104218440A (en) | 2014-09-19 | 2014-09-19 | Internal frequency doubling ultraviolet laser of semiconductor side pump cavity |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104682183A (en) * | 2015-02-10 | 2015-06-03 | 武汉新特光电技术有限公司 | Diode end-pumped all-solid-state laser |
| CN107946891A (en) * | 2017-12-14 | 2018-04-20 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN108365506A (en) * | 2018-04-17 | 2018-08-03 | 苏州英谷激光有限公司 | Narrow linewidth ultraviolet laser |
| CN108471042A (en) * | 2018-04-27 | 2018-08-31 | 国科世纪激光技术（天津）有限公司 | Fixed pulse width intracavity double frequency ultraviolet laser and operating method |
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| US5850407A (en) * | 1997-11-25 | 1998-12-15 | Lightwave Electronics Corporation | Third-harmonic generator with uncoated brewster-cut dispersive output facet |
| US20030214984A1 (en) * | 2002-03-28 | 2003-11-20 | Lightwave Electronics Corporation | Intracavity resonantly enhanced fourth-harmonic generation using uncoated brewster surfaces |
| CN101103501A (en) * | 2004-11-30 | 2008-01-09 | 电子科学工业公司 | Nonlinear crystal modifications for durable high-power laser wavelength conversion |
| CN204167676U (en) * | 2014-09-19 | 2015-02-18 | 福州紫凤光电科技有限公司 | Semiconductor side pumping intracavity double frequency ultraviolet laser |
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2014
- 2014-09-19 CN CN201410481679.0A patent/CN104218440A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5850407A (en) * | 1997-11-25 | 1998-12-15 | Lightwave Electronics Corporation | Third-harmonic generator with uncoated brewster-cut dispersive output facet |
| US20030214984A1 (en) * | 2002-03-28 | 2003-11-20 | Lightwave Electronics Corporation | Intracavity resonantly enhanced fourth-harmonic generation using uncoated brewster surfaces |
| CN101103501A (en) * | 2004-11-30 | 2008-01-09 | 电子科学工业公司 | Nonlinear crystal modifications for durable high-power laser wavelength conversion |
| CN204167676U (en) * | 2014-09-19 | 2015-02-18 | 福州紫凤光电科技有限公司 | Semiconductor side pumping intracavity double frequency ultraviolet laser |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104682183A (en) * | 2015-02-10 | 2015-06-03 | 武汉新特光电技术有限公司 | Diode end-pumped all-solid-state laser |
| CN107946891A (en) * | 2017-12-14 | 2018-04-20 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN107946891B (en) * | 2017-12-14 | 2019-09-17 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN108365506A (en) * | 2018-04-17 | 2018-08-03 | 苏州英谷激光有限公司 | Narrow linewidth ultraviolet laser |
| CN108471042A (en) * | 2018-04-27 | 2018-08-31 | 国科世纪激光技术（天津）有限公司 | Fixed pulse width intracavity double frequency ultraviolet laser and operating method |
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Application publication date: 20141217 |