CN104409420A - Manufacturing process of on-chip Pt thin film thermistor for GaAs (Gallium Arsenide) power device and microwave monolithic circuit - Google Patents

Manufacturing process of on-chip Pt thin film thermistor for GaAs (Gallium Arsenide) power device and microwave monolithic circuit Download PDF

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Publication number
CN104409420A
CN104409420A CN201410535499.6A CN201410535499A CN104409420A CN 104409420 A CN104409420 A CN 104409420A CN 201410535499 A CN201410535499 A CN 201410535499A CN 104409420 A CN104409420 A CN 104409420A
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thermistor
gaas
microwave
thin
circuit
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CN201410535499.6A
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CN104409420B (en
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王智勇
张绵
尧舜
王青
高鹏坤
郑建华
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Beijing University of Technology
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Beijing University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides

Abstract

The invention discloses a manufacturing process of an on-chip Pt thin film thermistor for a GaAs (Gallium Arsenide) power device and a microwave monolithic circuit. In the manufacturing process of a GaAs-based microwave device, a manufacturing process link of the Pt thin film thermistor is added and is fully integrated into a current microwave device process to manufacture a Pt thermistor on a wafer for performing real-time detection on the temperature of the device. A GaAs substrate is taken as a substrate having the functions of bearing load, dissipating heat and the like; an epitaxial layer growing above is a buffer layer; a front side circuit comprises microwave integrated circuits such as a GaAsHEMT (High Electron Mobility Transistor) device, an HBT (Heterojunction Bipolar Transistor) device and a capacitive resistor; and a GaN (Gallium Nitride) passivation layer is grown to protect a surface circuit and provide buffering for a Pt thin film resistor. The invention aims to provide a method for solving the problem of thermal damage of the GaAs-based microwave device and a microwave monolithic integrated circuit. Through adoption of the method, the GaAs power device is improved on the wafer, and power reduction and even burn-out of the device caused by heat of pHEMT (pseudomorphic High Electron Mobility Transistor) and HBT power amplifiers can be avoided.

Description

The preparation technology of Pt thin-film thermistor on the sheet of a kind of GaAs power device, microwave monolithic circuit
Technical field
The present invention relates to GaAs device and microwave monolithic circuit MMIC and manufacture field, the preparation technology of Pt thin-film thermistor on the sheet being specifically related to a kind of GaAs power device, microwave monolithic circuit.
Background technology
GaAs device has high electron mobility, therefore has good high frequency, low noise, high gain characteristics.GaAs based microwave monolithic integrated circuit (GaAs MMIC), be in semi-insulated gallium arsenide substrate by a series ofly such as to evaporate, the semiconductor technology such as epitaxial growth and corrosion prepares passive and active device, and couples together the functional circuit forming and be applied to microwave, millimeter wave frequency band.
And GaAs microwave power amplifier (PA) is one of most widely used at present monolithic integrated circuit, has become military, one of the key component in commercial communication field.
But the thermal conductivity of GaAs is poor, therefore the generation thermal effect of power device is its maximum problem.Along with the increase of input power, transistor can produce serious thermal runaway when high-power, causes gain, power reduction, and particularly HBT device has obvious gain and to cave in phenomenon, and permanent heat accumulation, even can cause burning of device.If devices function is even outer space environment in high-altitude, the strike that device burns is destructive.
For solving above heat problem, to connect a ballast resistor in the base stage of each HBT or emitter when the conventional method of tradition is circuit design, or using the method for back-off; Comprise organic semiconductor device, chip-covered boss technology at the heat treatment method of manufacturing process aspect, increase dorsal pore etc.But, although steady resistance can reduce the thermal effect of the device circuitry such as power amplifier (PA), significantly reduce the gain power characteristic of device, and part heat can only be absorbed, little for the contribution of long-term thermal buildup issue; The method of back-off is more reduction of device use value, increases volume, cost; And the thinning heat treatment method that waits in technique, there is certain limit, still can not well control heat waste and ruin problem.
In heat monitoring, use electric method to measure junction temperature in microwave regime, but this method can only use by the failtests before device application, can not solve heat problem in embody rule process; And electricity field temperature element, the thermistor as composite materials such as Mo-Cu-Ni is very ripe, but volume does not meet monolithic application, and technique is difficult to melt mutually with microwave device, monolithic technology.
Summary of the invention
The object of the present invention is to provide a kind of GaAs of solution base microwave device, method that microwave monolithic integrated circuit heat waste ruins problem, the method is improved GaAs power device and the heat of pHEMT, HBT power amplifier can be avoided to cause device power to reduce and even burns on wafer.
For achieving the above object, the method implementing procedure that the present invention adopts is as follows, in the preparation process of GaAs base microwave device, add Pt thin-film thermistor fabrication, and make it incorporate existing microwave device technique completely, wafer is prepared Pt thermistor device temperature is detected in real time.The present invention is applicable to GaAs base microwave power device, as: the preparation technology of pHEMT or HBT power device, power amplifier.
GaAs substrate 1 is as substrate; bear the effect such as load, heat radiation; growing superincumbent epitaxial loayer 2 is resilient coatings; front-side circuit 3 comprises the microwave integrated circuits such as GaAs HEMT device, HBT device, capacitance resistance; namely regrowth one deck GaN passivation layer 4 is to protect surface circuit 4, is also for Pt film resistor 5 provides cushioning effect.
Specific embodiment is as follows,
S1. prepare one deck GaN passivation layer at crystal column surface, this is also that because GaN thermal resistance is relatively slightly high, therefore this passivation layer should be enough thin, is about about 1um for ceramic substrate materials is served as in the preparation of Pt thermistor simultaneously;
S2. apply the anticorrosive glue of light on a ceramic substrate, make Pt thermistor microstructure graph by lithography;
S3. use magnetron sputtering apparatus, deposition Pt metallic film, thickness is about about 0.3um;
S4. in salt bath, photoresist is removed;
S5. annealing in process at 300 DEG C of temperature, or carry out quick high-temp annealing in process, finally obtain the Pt metal micro structure figure deposited on a ceramic substrate.
Wherein, annealing in process can improve the stability of Pt film resistor, eliminates the defect such as room, dislocation; Improve the Seebeck coefficient of film; Get rid of partial impurities in film (gaseous state, solid-state), purity increases to some extent; Adhesion enhancement, Pt film film is more firm; Eliminate stress, film strength improves.
S6. laser resistor trimming equipment is utilized to adjust Pt metal thin film resistor resistance.
S7. wire bonding mode is used to make the electrode of Pt thin-film thermistor.
Owing to having good technique blending, this method allows device layout flexibly, as the design of Pt thermistor can be monitored device pHEMT source and drain level, HBT collection emitter-base bandgap grading temperature accurately near tube core, also allow design at device edge, connect reflection device temperature at circuit design times.
Advantage of the present invention is, technique is melted completely mutually with the preparation technology of existing GaAs base microwave device; Accessible site on sheet, solves the problem that microwave current power device temperature cannot in use detect in real time; Effectively can improve the working limit of the power device of identical performance, reduce design difficulty, reduce integrated chip area, reduce costs; Real time temperature detect can device operating temperature in certain limit time, initiatively reduce device operating power or take other radiating modes or ACTIVE CONTROL automatic switchover power device etc., the device damage phenomenon effectively preventing the heat accumulation of device from causing, improves reliability.
Accompanying drawing explanation
Fig. 1 is process chart;
Fig. 2 is structure chart on Pt thin-film thermistor wafer;
Fig. 3 a is the surfacial pattern that Pt thin-film thermistor is positioned near the drain electrode of pHEMT device source or HBT device collection emitter-base bandgap grading;
Fig. 3 b is the surfacial pattern that Pt thin-film thermistor is positioned at around device;
In figure: 1, GaAs substrate, 2, epitaxial loayer, 3, front-side circuit, 4, GaN passivation layer, 5, Pt thin-film thermistor, 6, HBT collector electrode many fingers structure, 7, Pt thin-film thermistor structure.
Embodiment
As shown in Fig. 1-Fig. 3 (b), the preparation technology of Pt thin-film thermistor on the sheet of a kind of GaAs power device, microwave monolithic circuit, its manufacture craft is as follows,
1. in existing processing line, complete the preparation of GaAs device, circuit, generate surface circuit structure 3;
2. prepare one deck GaN passivation layer 4 at crystal column surface, this passivation layer is grown on wafer surface circuit 3, and passivation layer should be enough thin, is about about 1um; As shown in Figure 2;
3. on GaN passivation layer 4, apply the anticorrosive glue of light, make Pt thermistor 5 microstructure graph by lithography; Microstructure graph as shown in Figure 3 a-3b;
Wherein, Fig. 3 b is the surfacial pattern that Pt thin-film thermistor is positioned at around device, can make pattern incoherent with device surface shape, while reaching best heat-sensitive coefficients, saves area; And structure shown in Fig. 3 a, be positioned near the drain electrode of pHEMT device source or HBT device collection emitter-base bandgap grading, this just requires Pt thermistor figure as far as possible similar or identical with device, accurately to measure;
4. use magnetron sputtering apparatus, deposition Pt metallic film, thickness is about about 0.3um;
5. in salt bath, remove photoresist;
6. annealing in process at 300 DEG C of temperature, or carry out quick high-temp annealing in process, finally obtain the Pt metal micro structure figure be deposited on GaN passivation layer 4;
7. utilize laser resistor trimming equipment to adjust Pt metallic film resistance to applicable value, conventional 100Ohm, 10KOhm, 20KOhm;
8. use wire bonding mode to make the electrode of Pt thin-film thermistor.

Claims (3)

1. the preparation technology of Pt thin-film thermistor on the sheet of a GaAs power device, microwave monolithic circuit, it is characterized in that: in the preparation process of GaAs base microwave device, add Pt thin-film thermistor fabrication, and make it incorporate existing microwave device technique completely, wafer is prepared Pt thermistor device temperature is detected in real time;
GaAs substrate (1) is as substrate, bear the effect such as load, heat radiation, growing superincumbent epitaxial loayer (2) is resilient coating, front-side circuit (3) comprises GaAsHEMT device, HBT device, capacitance resistance microwave integrated circuit, regrowth one deck GaN passivation layer (4) is namely to protect surface circuit 4, is also for Pt film resistor (5) provides cushioning effect;
Specific embodiment is as follows,
S1. prepare one deck GaN passivation layer at crystal column surface, this is also that because GaN thermal resistance is relatively slightly high, therefore this passivation layer should be enough thin, is about about 1um for ceramic substrate materials is served as in the preparation of Pt thermistor simultaneously;
S2. apply the anticorrosive glue of light on a ceramic substrate, make Pt thermistor microstructure graph by lithography;
S3. use magnetron sputtering apparatus, deposition Pt metallic film, thickness is about about 0.3um;
S4. in salt bath, photoresist is removed;
S5. annealing in process at 300 DEG C of temperature, or carry out quick high-temp annealing in process, finally obtain the Pt metal micro structure figure deposited on a ceramic substrate;
S6. laser resistor trimming equipment is utilized to adjust Pt metal thin film resistor resistance;
S7. wire bonding mode is used to make the electrode of Pt thin-film thermistor.
2. on the sheet of a kind of GaAs power device according to claim 1, microwave monolithic circuit, the preparation technology of Pt thin-film thermistor, is characterized in that: its manufacture craft is as follows,
1) in existing processing line, complete the preparation of GaAs device, circuit, generate surface circuit structure;
2) prepare one deck GaN passivation layer at crystal column surface, this passivation layer is grown on wafer surface circuit 3, and passivation layer should be enough thin, is about about 1um;
3) on GaN passivation layer, apply the anticorrosive glue of light, make Pt thermistor microstructure graph by lithography;
4) use magnetron sputtering apparatus, deposition Pt metallic film, thickness is about about 0.3um;
5) in salt bath, photoresist is removed;
6) annealing in process at 300 DEG C of temperature, or carry out quick high-temp annealing in process, finally obtain the Pt metal micro structure figure be deposited on GaN passivation layer;
7) laser resistor trimming equipment is utilized to adjust Pt metallic film resistance to applicable value, conventional 100Ohm, 10KOhm, 20KOhm;
8) wire bonding mode is used to make the electrode of Pt thin-film thermistor.
3. the preparation technology of Pt thin-film thermistor on the sheet of a kind of GaAs power device according to claim 2, microwave monolithic circuit, it is characterized in that: make Pt thermistor microstructure graph by lithography, Pt thin-film thermistor is positioned at the surfacial pattern around device, pattern incoherent with device surface shape can be made, while reaching best heat-sensitive coefficients, save area; Be positioned near the drain electrode of pHEMT device source or HBT device collection emitter-base bandgap grading, this just requires that Pt thermistor figure is as far as possible similar or identical with device, accurately to measure.
CN201410535499.6A 2014-10-11 2014-10-11 The preparation technology of Pt thin-film thermistors on a kind of GaAs power devices, the piece of microwave monolithic circuit Expired - Fee Related CN104409420B (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977297A (en) * 2015-03-12 2016-09-28 精工半导体有限公司 Semiconductor device
CN111211112A (en) * 2020-01-09 2020-05-29 深圳第三代半导体研究院 Integrated GaN device real-time temperature measurement system and preparation method thereof
CN112394546A (en) * 2020-11-13 2021-02-23 联合微电子中心有限责任公司 Method and system for regulating and controlling integrated termination resistance of traveling wave electrode modulator
CN113140527A (en) * 2021-04-15 2021-07-20 哈尔滨工业大学 Power device capable of accurately monitoring temperature and radio frequency characteristics in real time and packaging method thereof
CN113571580A (en) * 2021-09-23 2021-10-29 深圳市时代速信科技有限公司 HEMT device and preparation method thereof
CN113970750A (en) * 2021-12-23 2022-01-25 华芯半导体研究院(北京)有限公司 Measuring device and glove box

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US5066938A (en) * 1989-10-16 1991-11-19 Kabushiki Kaisha Kobe Seiko Sho Diamond film thermistor
JP2000294566A (en) * 1999-04-09 2000-10-20 Hitachi Ltd Semiconductor device and manufacture thereof, and manufacture of substrate
CN1409329A (en) * 2001-09-28 2003-04-09 石塚电子株式会社 Thin film thermosensitive resistor and tis resistance valve regulating method
CN103688320A (en) * 2012-07-13 2014-03-26 Ｓｅｍｉｔｅｃ株式会社 Thin-film thermistor element and method for manufacturing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066938A (en) * 1989-10-16 1991-11-19 Kabushiki Kaisha Kobe Seiko Sho Diamond film thermistor
JP2000294566A (en) * 1999-04-09 2000-10-20 Hitachi Ltd Semiconductor device and manufacture thereof, and manufacture of substrate
CN1409329A (en) * 2001-09-28 2003-04-09 石塚电子株式会社 Thin film thermosensitive resistor and tis resistance valve regulating method
CN103688320A (en) * 2012-07-13 2014-03-26 Ｓｅｍｉｔｅｃ株式会社 Thin-film thermistor element and method for manufacturing same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977297A (en) * 2015-03-12 2016-09-28 精工半导体有限公司 Semiconductor device
CN105977297B (en) * 2015-03-12 2020-08-21 艾普凌科有限公司 Semiconductor device with a plurality of semiconductor chips
CN111211112A (en) * 2020-01-09 2020-05-29 深圳第三代半导体研究院 Integrated GaN device real-time temperature measurement system and preparation method thereof
CN111211112B (en) * 2020-01-09 2021-10-22 深圳第三代半导体研究院 Integrated GaN device real-time temperature measurement system and preparation method thereof
CN112394546A (en) * 2020-11-13 2021-02-23 联合微电子中心有限责任公司 Method and system for regulating and controlling integrated termination resistance of traveling wave electrode modulator
CN113140527A (en) * 2021-04-15 2021-07-20 哈尔滨工业大学 Power device capable of accurately monitoring temperature and radio frequency characteristics in real time and packaging method thereof
CN113571580A (en) * 2021-09-23 2021-10-29 深圳市时代速信科技有限公司 HEMT device and preparation method thereof
CN113970750A (en) * 2021-12-23 2022-01-25 华芯半导体研究院(北京)有限公司 Measuring device and glove box

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