CN104409420B - The preparation technology of Pt thin-film thermistors on a kind of GaAs power devices, the piece of microwave monolithic circuit - Google Patents

The preparation technology of Pt thin-film thermistors on a kind of GaAs power devices, the piece of microwave monolithic circuit Download PDF

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Publication number
CN104409420B
CN104409420B CN201410535499.6A CN201410535499A CN104409420B CN 104409420 B CN104409420 B CN 104409420B CN 201410535499 A CN201410535499 A CN 201410535499A CN 104409420 B CN104409420 B CN 104409420B
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thin
gaas
microwave
film
circuit
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CN104409420A (en
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王智勇
张绵
尧舜
王青
高鹏坤
郑建华
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Beijing University of Technology
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Beijing University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides

Abstract

The preparation technology of Pt thin-film thermistors on a kind of GaAs power devices, the piece of microwave monolithic circuit, in the preparation process of GaAs base microwave devices, add Pt thin-film thermistor fabrications, and it is fully immersed into existing microwave device technique, Pt thermistors are prepared on wafer carries out real-time detection to device temperature.GaAs substrates are used as substrate; undertake the effect such as load, radiating; it is cushion to grow superincumbent epitaxial layer; the front-side circuit microwave integrated circuit such as including GaAsHEMT devices, HBT devices, capacitance resistance; it, in order to protect surface circuit, is also for Pt film resistors provide cushioning effect that one layer of GaN passivation layer of regrowth is.Object of the present invention is to provide a kind of method that solution GaAs bases microwave device, microwave monolithic integrated circuit heat waste ruin problem, the method improves GaAs power devices on wafer and can avoid the thermally-induced device power reduction of pHEMT, HBT power amplifier or even burn.

Description

Pt thin-film thermistors on a kind of GaAs power devices, the piece of microwave monolithic circuit Preparation technology
Technical field
The present invention relates to GaAs devices and microwave monolithic circuit MMIC manufactures field, and in particular to a kind of GaAs power devices The preparation technology of Pt thin-film thermistors on part, the piece of microwave monolithic circuit.
Background technology
GaAs devices have high electron mobility, therefore with good high frequency, low noise, high gain characteristics.GaAs Base microwave monolithic integrated circuit (GaAs MMIC), is by a series of such as evaporation, extensions in semi-insulated gallium arsenide substrate The semiconductor technology such as growth and corrosion prepares passive and active device, and couples together composition and be applied to microwave, millimeter wave frequency The functional circuit of section.
And GaAs microwave power amplifiers (PA) are one of monolithic integrated optical circuit most widely used at present, the army of having become With one of the, key component in commercial communication field.
But the thermal conductivity of GaAs is poor, therefore the generation fuel factor of power device is its maximum problem.With defeated Enter the increase of power, serious thermal runaway can be produced when transistor is operated in high-power, cause gain, power reduction, particularly There is HBT devices obvious gain to cave in phenomenon, permanent heat accumulation, or even can cause burning for device.If device works In high-altitude even outer space environment, the strike that device burns is destructive.
To solve above heat problem, in the base stage or emitter stage string of each HBT when the conventional method of tradition is circuit design One ballast resistor of connection, or use the method for back-off；Include thinning lining in the heat treatment method of manufacturing process aspect Bottom, chip-covered boss technology, increase dorsal pore etc..But, although steady resistance can reduce the device circuitries such as power amplifier (PA) Fuel factor, but significantly reduces the gain power characteristic of device, and can only absorb a part of heat, is asked for long-term heat accumulation Topic contribution is little；The method of back-off is more reduction of device use value, increases volume, cost；And it is thinning etc. in technique Heat treatment method, there is certain limit, still can not well control heat waste to ruin problem.
In terms of hot monitoring, junction temperature is measured using electric method in microwave regime, but this method can only be in device application Failtests before is used, it is impossible to solve the heat problem during concrete application；And electricity field temperature element, such as Mo- The thermistor of the mixing materials such as Cu-Ni is highly developed, but monolithic application is not met in volume, and in technique with microwave Device, monolithic technology are difficult mutually to melt.
The content of the invention
GaAs bases microwave device, microwave monolithic integrated circuit heat waste are solved object of the present invention is to provide one kind to ruin and ask The method of topic, the method improves GaAs power devices on wafer and can avoid the thermally-induced device of pHEMT, HBT power amplifier The reduction of part power is even burnt.
To achieve the above object, the method implementing procedure that the present invention is used is as follows, in the preparation work of GaAs base microwave devices During skill, Pt thin-film thermistor fabrications are added, and it is fully immersed into existing microwave device technique, in wafer On prepare Pt thermistors real-time detection carried out to device temperature.The present invention is applied to GaAs base microwave power devices, such as： The preparation technology of pHEMT or HBT power devices, power amplifier.
GaAs substrates 1 undertake the effect such as load, radiating as substrate, and it is cushion to grow superincumbent epitaxial layer 2, just Face circuit 3 microwave integrated circuit, one layer of GaN passivation layer 4 of regrowth such as including GaAs HEMT devices, HBT devices, capacitance resistance It, in order to protect surface circuit 4, is also for Pt film resistors 5 provide cushioning effect to be.
Specific embodiment is as follows,
S1. one layer of GaN passivation layer is prepared in crystal column surface, while this is also to serve as ceramic substrate for prepared by Pt thermistors Material, because GaN thermal resistances are relatively slightly higher, therefore this passivation layer should be sufficiently thin, about 1um or so；
S2. the anticorrosive glue of light is coated on a ceramic substrate, makes Pt thermistor microstructure graphs by lithography；
S3. magnetron sputtering apparatus are used, Pt metallic films are deposited, thickness is about 0.3um or so；
S4. photoresist is removed in salt bath；
S5. made annealing treatment at a temperature of 300 DEG C, or carry out quick high-temp annealing, finally obtained and be deposited on ceramic liner Pt metal micro structure figures on bottom.
Wherein, annealing can improve the stability of Pt film resistors, eliminate the defects such as room, dislocation；Improve film Seebeck coefficient；Partial impurities (gaseous state, solid-state) in film are excluded, purity increased；Adhesion enhancement, Pt film films are more firm Lean on；Stress is eliminated, film strength is improved.
S6. using laser resistor trimming equipment adjustment Pt metal thin film resistor resistances.
S7. the electrode of Pt thin-film thermistors is made using wire bonding mode.
Because with good technique blending, this method allows flexible device to design, and such as designs Pt thermistors Device pHEMT source and drain level, HBT collection emitter-base bandgap grading temperature can be accurately monitored near tube core, design is also allowed in device edge, Device temperature is reflected circuit design times are reversed.
It is an advantage of the present invention that the preparation technology in technique with existing GaAs bases microwave device is mutually melted completely；Can on piece It is integrated, solve the problems, such as that microwave current power device temperature cannot real-time detection in use；Phase can be effectively improved With the working limit of the power device of performance, design difficulty is reduced, reduce integrated chip area, reduces cost；Real time temperature is examined Survey can actively reduce device operating power or take other radiating modes or active when device operating temperature is in certain limit Control automatic switchover power device etc., effectively prevents the device damage phenomenon that the heat accumulation of device causes, and improves reliability.
Brief description of the drawings
Fig. 1 is process chart；
Fig. 2 is structure chart on Pt thin-film thermistor wafers；
Fig. 3 a are the surfacial pattern that Pt thin-film thermistors are located near pHEMT devices source-drain electrode or HBT device collection emitter-base bandgap gradings；
Fig. 3 b are the surfacial pattern that Pt thin-film thermistors are located at around device；
In figure：1st, GaAs substrates, 2, epitaxial layer, 3, front-side circuit, 4, GaN passivation layers, 5, Pt thin-film thermistors, 6, Referring to structure HBT colelctor electrodes more, 7, Pt thin-film thermistor structures
Specific embodiment
As shown in Fig. 1-Fig. 3 (b), Pt thin-film thermistors on a kind of GaAs power devices, the piece of microwave monolithic circuit Preparation technology, its manufacture craft is as follows,
1. GaAs devices, the preparation of circuit, generation surface circuit structure 3 are completed in existing processing line；
2. one layer of GaN passivation layer 4 is prepared in crystal column surface, this passivation layer is grown on wafer surface circuit 3, and passivation Layer should be sufficiently thin, about 1um or so；As shown in Figure 2；
3. the anticorrosive glue of light is coated on GaN passivation layers 4, the microstructure graph of Pt thermistors 5 is made by lithography；Micro-structural figure Shape is as shown in Figure 3 a-3b；
Wherein, Fig. 3 b are the surfacial pattern that Pt thin-film thermistors are located at around device, can be made and device surface shape The incoherent pattern of shape, to reach while best heat-sensitive coefficients, saves area；And structure shown in Fig. 3 a, positioned at pHEMT devices Near part source-drain electrode or HBT device collection emitter-base bandgap gradings, it is similar or identical with device that this requires Pt thermistor figures to try one's best, with accurate Measurement；
4. magnetron sputtering apparatus are used, Pt metallic films are deposited, thickness is about 0.3um or so；
5. photoresist is removed in salt bath；
6. made annealing treatment at a temperature of 300 DEG C, or carry out quick high-temp annealing, finally obtained and be deposited on GaN passivation Pt metal micro structure figures on layer 4；
7. Pt metallic films resistance is adjusted to value is applicable using laser resistor trimming equipment, commonly use 100Ohm, 10KOhm, 20KOhm；
8. the electrode of Pt thin-film thermistors is made using wire bonding mode.

Claims (3)

1. on a kind of GaAs power devices, the piece of microwave monolithic circuit Pt thin-film thermistors preparation technology, it is characterised in that： In the preparation process of GaAs base microwave devices, Pt thin-film thermistor fabrications are added, and it is melted completely Enter existing microwave device technique, Pt thermistors are prepared on wafer carries out real-time detection to device temperature；
Used as substrate, it is cushion to grow superincumbent epitaxial layer (2) to GaAs substrates (1), and front-side circuit (3) is including GaAs HEMT device, HBT devices and capacitance resistance microwave integrated circuit, one layer of GaN passivation layer (4) of regrowth is to protect surface Circuit 4, is also for Pt film resistors (5) provide cushioning effect；
Specific embodiment is as follows,
S1. one layer of GaN passivation layer is prepared in crystal column surface, while this is also to serve as ceramic liner ground for prepared by Pt thermistors Material, because GaN thermal resistances are relatively slightly higher, therefore this passivation layer should be sufficiently thin, is 1um；
S2. the anticorrosive glue of light is coated on a ceramic substrate, makes Pt thermistor microstructure graphs by lithography；
S3. magnetron sputtering apparatus are used, Pt metallic films are deposited, thickness is 0.3um；
S4. photoresist is removed in salt bath；
S5. made annealing treatment at a temperature of 300 DEG C, or carry out quick high-temp annealing, finally obtain deposition on a ceramic substrate Pt metal micro structure figures；
S6. using laser resistor trimming equipment adjustment Pt metal thin film resistor resistances；
S7. the electrode of Pt thin-film thermistors is made using wire bonding mode.
2. on a kind of GaAs power devices, the piece of microwave monolithic circuit Pt thin-film thermistors preparation technology, it is characterised in that： Its manufacture craft is as follows,
1) GaAs devices, the preparation of circuit are completed in existing processing line, surface circuit structure is generated；
2) one layer of GaN passivation layer is prepared in crystal column surface, this passivation layer is grown on wafer surface circuit (3), and passivation layer Should be sufficiently thin, it is 1um；
3) photoresist is coated on GaN passivation layers, makes Pt thermistor microstructure graphs by lithography；
4) magnetron sputtering apparatus are used, Pt metallic films are deposited, thickness is 0.3um；
5) photoresist is removed in salt bath；
6) made annealing treatment at a temperature of 300 DEG C, or carry out quick high-temp annealing, finally obtained and be deposited on GaN passivation layers Pt metal micro structure figures；
7) Pt metallic films resistance is adjusted to value is applicable using laser resistor trimming equipment, commonly use 100Ohm, 10KOhm, 20KOhm；
8) electrode of Pt thin-film thermistors is made using wire bonding mode.
3. Pt thin-film thermistors on a kind of GaAs power devices according to claim 2, the piece of microwave monolithic circuit Preparation technology, it is characterised in that：Make Pt thermistor microstructure graphs by lithography, Pt thin-film thermistors are located at the table around device Face figure, can make and the incoherent pattern of device surface shape, to reach while best heat-sensitive coefficients, saving face Product；Near pHEMT devices source-drain electrode or HBT device collection emitter-base bandgap gradings, this requires that Pt thermistor figures are tried one's best and device phase It is seemingly or identical, with accurate measurement.
CN201410535499.6A 2014-10-11 2014-10-11 The preparation technology of Pt thin-film thermistors on a kind of GaAs power devices, the piece of microwave monolithic circuit Expired - Fee Related CN104409420B (en)

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JP6503202B2 (en) * 2015-03-12 2019-04-17 エイブリック株式会社 Semiconductor device
CN111211112B (en) * 2020-01-09 2021-10-22 深圳第三代半导体研究院 Integrated GaN device real-time temperature measurement system and preparation method thereof
CN112394546A (en) * 2020-11-13 2021-02-23 联合微电子中心有限责任公司 Method and system for regulating and controlling integrated termination resistance of traveling wave electrode modulator
CN113140527A (en) * 2021-04-15 2021-07-20 哈尔滨工业大学 Power device capable of accurately monitoring temperature and radio frequency characteristics in real time and packaging method thereof
CN113571580A (en) * 2021-09-23 2021-10-29 深圳市时代速信科技有限公司 HEMT device and preparation method thereof
CN113970750A (en) * 2021-12-23 2022-01-25 华芯半导体研究院(北京)有限公司 Measuring device and glove box

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US5066938A (en) * 1989-10-16 1991-11-19 Kabushiki Kaisha Kobe Seiko Sho Diamond film thermistor
CN1409329A (en) * 2001-09-28 2003-04-09 石塚电子株式会社 Thin film thermosensitive resistor and tis resistance valve regulating method
CN103688320A (en) * 2012-07-13 2014-03-26 Ｓｅｍｉｔｅｃ株式会社 Thin-film thermistor element and method for manufacturing same

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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US5066938A (en) * 1989-10-16 1991-11-19 Kabushiki Kaisha Kobe Seiko Sho Diamond film thermistor
CN1409329A (en) * 2001-09-28 2003-04-09 石塚电子株式会社 Thin film thermosensitive resistor and tis resistance valve regulating method
CN103688320A (en) * 2012-07-13 2014-03-26 Ｓｅｍｉｔｅｃ株式会社 Thin-film thermistor element and method for manufacturing same

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