CN104426416A

CN104426416A - Friction power generator employing semiconductor composite material

Info

Publication number: CN104426416A
Application number: CN201310389137.6A
Authority: CN
Inventors: 殷亮; 李洁; 王竹; 赵豪
Original assignee: Nano New Energy Tangshan Co Ltd
Current assignee: Nano New Energy Tangshan Co Ltd
Priority date: 2013-08-30
Filing date: 2013-08-30
Publication date: 2015-03-18
Anticipated expiration: 2033-08-30
Also published as: CN104426416B

Abstract

The invention provides a friction power generator employing a semiconductor composite material. The friction power generator comprises a first electrode layer, a first polymer material layer and a second electrode layer, which are laminated, wherein a material for the first polymer material layer is a metal-doped polymer semiconductor composite material. According to the friction power generator, an insulating polymer is doped with metal particles, so that the resistivity of the polymer is reduced, and the volume resistivity of the polymer is at a level between the volume resistivity of metal and the volume resistivity of an insulating material. According to the friction power generator, the working internal resistance of the power generator can be effectively reduced, and the load capacity of the friction power generator can be improved within a certain range.

Description

The friction generator of application semiconductor composite

Technical field

The present invention relates to triboelectricity field, especially relate to a kind of friction generator of applied metal doped polymer semiconductor composite.

Background technology

At present, energy problem is one of key subjects affecting human progress and sustainable development.Variously to carry out in high gear all over the world around new energy development, the research that can reuse the renewable energy resources.

The collection of energy adopting friction techniques to build and conversion equipment, play a crucial role in self-powered nanosystems.Further, because it possesses the characteristics such as environmental protection, cost be low, self-driven, extensive concern is received.The piezoelectricity friction generator of teaching seminar's research and development along with Wang Zhonglin has realized since mechanical energy is converted to electric energy, and the different structure based on piezoelectricity and friction electricity and the friction generator of material are come out one after another.At present, friction generator can drive small liquid crystal display, low-power light-emitting diode and microelectronic device and module etc., but the output performance of generator remains the key factor of its development of restriction and application.

Summary of the invention

Technical problem to be solved by this invention is: the defect overcoming existing friction generator output performance, provides a kind of friction generator of metal doped polymer semiconductor composite, can significantly improve the load capacity of friction generator.

Conducting metal particles is added in insulating polymer, the resistivity of polymer can be reduced, make the level of its specific insulation between metal volume resistivity and insulating material volume resistivity, thus obtain the semiconductor composite of metal doped polymer.Metal doped polymer semiconductor composite had both possessed the functional characteristic of metallic particles as conductivity, also had the excellent mechanical performance of polymeric material and machinability.In friction generator, use semiconductor compound material effectively can reduce the work internal resistance of generator, the load capacity of friction generator can be improved within the specific limits.

But the difference of character between metallic particles and polymer, makes both compatibility poor, thus easily causes the reunion of metallic particles, affect the performance of semiconductor composite.Therefore, need to carry out surface modification to metallic particles, dispersion that can be stable in the polymer matrix.

In order to solve the problems of the technologies described above, first technical scheme provided by the invention, a kind of friction generator applying semiconductor composite, comprise the first electrode layer of stacked setting, first polymer material layer, and the second electrode lay, wherein the first polymer material layer material therefor is the semiconductor composite of metal doped polymer.

Aforesaid friction generator, at least one face in two faces that first polymer material layer and the second electrode lay are oppositely arranged arranges micro-nano concaveconvex structure, and the micro-nano concaveconvex structure that described first polymer material layer is arranged on the surface is the micro-nano concaveconvex structure of height of projection 200nm-100 μm; The micro-nano concaveconvex structure that described the second electrode lay is arranged on the surface is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

Aforesaid friction generator, the first electrode layer material therefor is indium tin oxide, Graphene, nano silver wire film, metal or alloy, and wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy;

The second electrode lay material therefor is metal or alloy, and wherein metal can be Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy can be aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.

Aforesaid friction generator, described friction generator comprises the second polymer material layer further, and this second polymer material layer is arranged between the first polymer material layer and the second electrode lay.

Aforesaid friction generator, at least one face in two faces that first polymer material layer and the second polymer material layer are oppositely arranged arranges micro-nano concaveconvex structure, and the micro-nano concaveconvex structure that described first polymer material layer and/or the second polymer material layer are arranged on the surface is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

Aforesaid friction generator, described second polymer material layer material therefor is the semiconductor composite of metal doped polymer.

Aforesaid friction generator, described second polymer material layer material therefor is polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, cellulose sponge film, renewable sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polymethyl methacrylate film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde-phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber films, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film.

Aforesaid friction generator, described friction generator comprises intervening electrode layer further, and described intervening electrode layer is arranged between the first polymer material layer and the second polymer material layer.

Aforesaid friction generator, described intervening electrode layer is metal, metal oxide, alloy-layer, or patterned metal line-high polymer layer folds body, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy, and metal oxide is indium tin oxide.

It is on the surface by hot pressing, spin coating, blade coating or screen-printed metal, metal dust or metal paste in the side of high polymer layer that patterned metal line-high polymer layer of the present invention folds body, form patterned metal line, thus the duplexer prepared.Metal material therefor is metal or alloy, and wherein, metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, selenium, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.Metal paste of the present invention comprises adhesive, metal dust, diluent etc.Adhesive and diluent are the conventional ingredient making metal paste.Here be graphically can conducting graphical, such as well shape structure, diamond shaped structure, Z-shaped structure or interdigital structure.

Aforesaid friction generator, on at least one face in two faces that first polymer material layer and intervening electrode layer are oppositely arranged, and/or second at least one face in two face being oppositely arranged of polymer material layer and intervening electrode layer arranges micro-nano concaveconvex structure, described micro-nano concaveconvex structure is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

Aforesaid friction generator, first electrode layer and the second electrode lay material therefor are indium tin oxide, Graphene, nano silver wire film, metal or alloy, and wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.

Aforesaid friction generator, with parts by weight, described semiconductor composite comprises metallic particles 1-50 part, and polymeric base material 30-99 part.

Aforesaid friction generator, described semiconductor composite comprises metallic particles 1-10 part, and polymeric base material 90-99 part.

Aforesaid friction generator, described polymeric base material is dimethyl silicone polymer, Kynoar, polymethyl methacrylate or polyvinyl chloride.

Aforesaid friction generator, described metallic particles is at least one in silver, copper, gold, aluminium, tungsten, nickel, iron, and its particle volume diameter is at 1-100 μm.

Aforesaid friction generator, described metallic particles is through modifier surface modified metallic particles, and the weight ratio of metallic particles and modifier is 1-50:1.

Aforesaid friction generator, the weight ratio of described metallic particles and modifier is 1-30:1.

Aforesaid friction generator, described modifier is polyvinylpyrrolidone, softex kw, dioctadecyl dimethyl ammonium chloride, sodium laurate, enuatrol, lauryl sodium sulfate, γ-chloropropyl trichloro-silane, γ-r-chloropropyl trimethoxyl silane, gamma-chloropropylmethyldimethoxysilane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-(methacryloxy) propyl trimethoxy silicane, β-(3,4 epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrimethoxysilane alkane, γ-mercaptopropyl trimethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-(3,2 glycidoxy) methyltrimethoxy silane, gamma-mercaptopropyltriethoxysilane, γ-(ethylenediamine base) propyl trimethoxy silicane, gamma-aminopropyl-triethoxy-silane, two-[3-(triethoxy) silicon propyl group tetrasulfide, diethylenetriamine base propyl trimethoxy silicane, γ-ethylenediamine ethyl triethoxy silicane alkane, Α-(ethylenediamine base) methyl triethoxysilane, anilinomethyl triethoxysilane, anilinomethyl trimethoxy silane, two (3-triethoxysilylpropyltetrasulfide) four nitric sulfids, Cyclohexyl Methyl Dimethoxysilane, tetra-n-butyl titanate, tetraisopropoxy titanium, 2-ethyl-1-hexanol titanium, metatitanic acid four n-propyl, poly(tributoxy titanium), isopropyl two oleic acid acyloxy (dioctyl phosphoric acid acyloxy) titanate esters, isopropyl three (dioctyl phosphoric acid acyloxy) titanate esters, isopropyl three oleic acid acyloxy titanate esters, isopropyl three (dodecyl benzenesulfonyl) titanate esters, three stearic acid isopropyl titanates, isopropyl three (dioctylphyrophosphoric acid acyloxy) titanate esters, two (dioctylphyrophosphoric acid acyloxy) ethylene titanate esters, tetra isopropyl two (dioctyl phosphito acyloxy) titanate esters, two (acetylacetone based) (diisopropyl) titanate esters, two (acetylacetone based) (isobutoxy isopropoxy) titanate esters, two (acetylacetone based) (ethyoxyl isopropoxy) titanate esters, two (triethanolamine) metatitanic acid diisopropyl ester, 2,2 ', 2 "-nitrogen base triethyl group titanate esters, at least one in two (ethyl acetoacetate) metatitanic acid diisobutyl ester.

Aforesaid friction generator, described modifier is lauryl sodium sulfate.

Second technical scheme provided by the invention, a kind of friction generator, comprise the first electrode layer of stacked setting, first polymer material layer, thin layer between two parties, the second polymer material layer and the second electrode lay, wherein, at least one deck in first polymer material layer and between two parties thin layer, and/or the second polymer material layer and at least one deck material therefor between two parties in thin layer are the semiconductor composites of metal doped polymer.

Aforesaid friction generator, with parts by weight, described semiconductor composite comprises metallic particles 1-10 part, and polymeric base material 90-99 part.

Aforesaid friction generator, described modifier is lauryl sodium sulfate.

Aforesaid friction generator, at least one face in two faces that first polymer material layer and between two parties thin layer are oppositely arranged arranges micro-nano concaveconvex structure, and/or the second polymer material layer and at least one face between two parties in two faces being oppositely arranged of thin layer arrange micro-nano concaveconvex structure;

Described first polymer material layer, and/or thin layer between two parties, and/or the micro-nano concaveconvex structure that arranges on the surface of the second polymer material layer is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

Aforesaid friction generator, when the first polymer material layer, or thin layer between two parties, or when the second polymer material layer does not adopt semiconductor composite, its material therefor is selected from polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, cellulose sponge film, renewable sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polymethyl methacrylate film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde-phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber films, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film.

Doping metals particle of the present invention, in insulating polymer, reduces the resistivity of polymer, makes the level of its specific insulation between metal volume resistivity and insulating material volume resistivity.The semiconductor composite of metal doped polymer had both possessed the functional characteristic of metallic particles as conductivity, also had the excellent mechanical performance of polymeric material and machinability.In friction generator, use this semiconductor compound material effectively can reduce the work internal resistance of generator, the load capacity of friction generator can be improved within the specific limits.

Accompanying drawing explanation

Fig. 1 is the perspective view of a kind of embodiment of friction generator of the present invention.

Fig. 2 is the cross-sectional view of Fig. 1 friction generator of the present invention.

Fig. 3 is the perspective view of the another kind of embodiment of friction generator of the present invention.

Fig. 4 is the cross-sectional view of Fig. 3 friction generator of the present invention.

Fig. 5 is the perspective view of the another kind of embodiment of friction generator of the present invention.

Fig. 6 is the perspective view of Fig. 5 friction generator of the present invention.

Fig. 7 is the perspective view of the another kind of embodiment of friction generator of the present invention.

Fig. 8 is the perspective view of Fig. 7 friction generator of the present invention.

Fig. 9 adopts Cu doped polymer semiconductor composite to be the open circuit voltage output valve of the friction generator of polymer material layer.

Figure 10 adopts Cu doped polymer semiconductor composite to be the 1M Ω load voltage output valve of the friction generator of polymer material layer.

Figure 11 is the open circuit voltage output valve of the friction generator of conventional polymeric materials layer.

Figure 12 is the 1M Ω load voltage output valve of the friction generator of conventional polymeric materials layer.

Embodiment

For fully understanding the object of the present invention, feature and effect, by following concrete execution mode, the present invention is elaborated.

The invention provides a kind of semiconductor composite of metal doped polymer, with parts by weight, metallic particles 1-50 part, and polymeric base material 30-99 part.Preferable alloy particle 1-10 part, and polymeric base material 90-99 part.

The present invention's polymeric base material used is dimethyl silicone polymer, Kynoar, polymethyl methacrylate or polyvinyl chloride.Above-mentioned material is dissolved in dimethylacetylamide (DMA), can liquid solution be formed.Dimethyl silicone polymer itself is liquid state, does not need to be dissolved in dimethylacetylamide (DMA).

The present invention's metallic particles used is at least one in silver, copper, gold, aluminium, tungsten, nickel, iron, and its particle volume diameter is at 1-100 μm.Preferably, described metallic particles is through modifier surface modified metallic particles, and the weight ratio of metallic particles and modifier is 1-50:1, and preferably, the weight ratio of described metallic particles and modifier is 1-30:1.

Above-mentioned modifier can be polyvinylpyrrolidone, softex kw, dioctadecyl dimethyl ammonium chloride, sodium laurate, enuatrol, lauryl sodium sulfate, γ-chloropropyl trichloro-silane, γ-r-chloropropyl trimethoxyl silane, gamma-chloropropylmethyldimethoxysilane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-(methacryloxy) propyl trimethoxy silicane, β-(3,4 epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrimethoxysilane alkane, γ-mercaptopropyl trimethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-(3,2 glycidoxy) methyltrimethoxy silane, gamma-mercaptopropyltriethoxysilane, γ-(ethylenediamine base) propyl trimethoxy silicane, gamma-aminopropyl-triethoxy-silane, two-[3-(triethoxy) silicon propyl group tetrasulfide, diethylenetriamine base propyl trimethoxy silicane, γ-ethylenediamine ethyl triethoxy silicane alkane, Α-(ethylenediamine base) methyl triethoxysilane, anilinomethyl triethoxysilane, anilinomethyl trimethoxy silane, two (3-triethoxysilylpropyltetrasulfide) four nitric sulfids, Cyclohexyl Methyl Dimethoxysilane, tetra-n-butyl titanate, tetraisopropoxy titanium, 2-ethyl-1-hexanol titanium, metatitanic acid four n-propyl, poly(tributoxy titanium), isopropyl two oleic acid acyloxy (dioctyl phosphoric acid acyloxy) titanate esters, isopropyl three (dioctyl phosphoric acid acyloxy) titanate esters, isopropyl three oleic acid acyloxy titanate esters, isopropyl three (dodecyl benzenesulfonyl) titanate esters, three stearic acid isopropyl titanates, isopropyl three (dioctylphyrophosphoric acid acyloxy) titanate esters, two (dioctylphyrophosphoric acid acyloxy) ethylene titanate esters, tetra isopropyl two (dioctyl phosphito acyloxy) titanate esters, two (acetylacetone based) (diisopropyl) titanate esters, two (acetylacetone based) (isobutoxy isopropoxy) titanate esters, two (acetylacetone based) (ethyoxyl isopropoxy) titanate esters, two (triethanolamine) metatitanic acid diisopropyl ester, 2,2 ', 2 "-nitrogen base triethyl group titanate esters, at least one in two (ethyl acetoacetate) metatitanic acid diisobutyl ester.Preferred modifier is lauryl sodium sulfate

The following detailed description of the preparation method of once above-mentioned semiconductor composite.The method comprises: selectivity step (1) carries out modification to metallic particles, and concrete employing improver carries out surface treatment to metallic particles, obtains through modifier surface modified metallic particles.The present invention's surface treatment method used is Conventional metal particles surface treatment method.

(2) polymeric base material liquid solution is prepared.Concrete, Kynoar, polymethyl methacrylate or polyvinyl chloride are dissolved in dimethylacetylamide (DMA) and form liquid solution.Dimethyl silicone polymer is inherently liquid, can directly apply to second step.

(3) metallic particles is joined step (2) gained liquid solution to mix.When polymer adopts dimethyl silicone polymer, need to adopt dimethyl silicone polymer and curing agent (vulcanizing agent, usual ratio is 10:1), curing agent used is commercially available conventional solidified dose, such as DOW CORNING 184.

(4) by step (3) gained liquid film, oven dry, obtain at least one side surface and the film that micro-nano concaveconvex structure or two side surfaces all have micro-nano concaveconvex structure is set.

The present invention adopts the methods such as conventional screen-print, coating, spin coating in silicon template, prepare the film with concaveconvex structure.The present invention adopts churned mechanically mode (ball milling, magnetic agitation, puddler stir) that mixing of materials is even.

Semiconductor composite of the present invention is applied in friction generator.The following detailed description of the structure of the friction generator of application semiconductor composite.

It is the friction generator 1 of a kind of embodiment of the present invention shown in Fig. 1 and Fig. 2.This friction generator 1 comprises the first electrode layer 11, first polymer material layer 12 of stacked setting, and the second electrode lay 13.Wherein, the first polymer material layer 12 material therefor is the semiconductor composite layer of above-mentioned metal doped polymer, and its thickness is 100 μm-500 μm.

At least one face in two faces that first polymer material layer 12 and the second electrode lay 13 are oppositely arranged is arranged micro-nano concaveconvex structure 14(Fig. 2 and micro-nano concaveconvex structure on the first polymer material layer 12 is only shown), the micro-nano concaveconvex structure that described first polymer material layer is arranged on the surface is the micro-nano concaveconvex structure of height of projection 200nm-100 μm; The micro-nano concaveconvex structure that described the second electrode lay is arranged on the surface is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

In this execution mode, first electrode layer 11 pairs material therefor does not have particular provisions, the material of conductive layer can be formed all within protection scope of the present invention, be such as indium tin oxide, Graphene, nano silver wire film, metal or alloy, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.

In this execution mode, the second electrode lay 13 material therefor can be metal or alloy, and wherein metal can be Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy can be aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.The thickness of the second electrode lay 13 preferably 100 μm-500 μm, more preferably 200 μm.

When each layer of the friction generator of this execution mode of the present invention is bent downwardly, the first polymer material layer 12 in friction generator produces electrostatic charge with the surperficial phase mutual friction of the second electrode lay 13, the generation of electrostatic charge can make the electric capacity between the first polymer material layer 12 and the second electrode lay 13 change, thus causes occurring electrical potential difference between the first polymer material layer 12 and the second electrode lay 13.Due to the existence of electrical potential difference between the first polymer material layer 12 and the second electrode lay 13, free electron flows to the high side of electromotive force by by external circuit by the side that electromotive force is low, thus forms electric current in external circuit.When each layer of friction generator of the present invention returns to original state, at this moment the built-in potential be formed between the first polymer material layer 12 and the second electrode lay 13 disappears, now will again produce reverse electrical potential difference between Balanced first polymer material layer 12 and the second electrode lay 13, then free electron forms reverse current by external circuit.By repeatedly rubbing and recovering, just periodic ac signal can be formed in external circuit.In this execution mode of the present invention, adopt the semiconductor composite of metal doped polymer as the first polymer material layer 12, make the level of its specific insulation between metal volume resistivity and insulating material volume resistivity, thus effectively can reduce the work internal resistance of generator, the load capacity of friction generator can be improved within the specific limits.

It is the friction generator 2 of the another kind of embodiment of the present invention shown in Fig. 3 and Fig. 4.This friction generator 2 comprises the first electrode layer 21 of stacked setting, first polymer material layer 22, second polymer material layer 23 and the second electrode lay 24, wherein, at least one deck material therefor in first polymer material layer 22 and the second polymer material layer 23 is the semiconductor composite layer of above-mentioned metal doped polymer, and its thickness is 100 μm-500 μm.

At least one face in two faces that first polymer material layer 22 and the second polymer material layer 23 are oppositely arranged is arranged micro-nano concaveconvex structure 25(Fig. 4 and micro-nano concaveconvex structure on the first polymer material layer 22 is only shown), this micro-nano concaveconvex structure is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

In this embodiment, first electrode layer 21 and the second electrode lay 24 pairs of material therefors do not have particular provisions, the material of conductive layer can be formed all within protection scope of the present invention, be such as indium tin oxide, Graphene, nano silver wire film, metal or alloy, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.

At least one deck material therefor in first polymer material layer 22 and the second polymer material layer 23 is above-mentioned semiconductor composite layer.When the first polymer material layer 22 or the second polymer material layer 23 do not adopt semiconductor composite layer, its material therefor is selected from polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, cellulose sponge film, renewable sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polymethyl methacrylate film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde-phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber films, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film.Now, the first polymer material layer 22 or the second polymer material layer 23 thickness are 100 μm-500 μm.

When each layer of the friction generator of this execution mode of the present invention is bent downwardly, the first polymer material layer 22 in friction generator produces electrostatic charge with the surperficial phase mutual friction of the second polymer material layer 23, the generation of electrostatic charge can make the electric capacity between the first polymer material layer 22 and the second polymer material layer 23 change, thus causes occurring electrical potential difference between the first electrode layer 21 and the second electrode lay 24.Due to the existence of electrical potential difference between the first electrode layer 21 and the second electrode lay 24, free electron flows to the high side of electromotive force by by external circuit by the side that electromotive force is low, thus forms electric current in external circuit.When each layer of friction generator of the present invention returns to original state, at this moment the built-in potential be formed between the first electrode layer 21 and the second electrode lay 24 disappears, now will again produce reverse electrical potential difference between Balanced first electrode layer 21 and the second electrode lay 24, then free electron forms reverse current by external circuit.By repeatedly rubbing and recovering, just periodic ac signal can be formed in external circuit.In this execution mode of the present invention, adopt the semiconductor composite of metal doped polymer as the first polymer material layer 22 and/or the second polymer material layer 23, make the level of its specific insulation between metal volume resistivity and insulating material volume resistivity, thus effectively can reduce the work internal resistance of generator, the load capacity of friction generator can be improved within the specific limits.

It is the friction generator 3 of another embodiment of the present invention shown in Fig. 5 and Fig. 6.This friction generator 3 comprises the first electrode layer 31, first polymer material layer 32, thin layer 33 between two parties, second polymer material layer 34 and the second electrode lay 35, wherein, at least one deck in first polymer material layer 32 and between two parties thin layer 33, and/or the second polymer material layer 34 and at least one deck material therefor between two parties in thin layer 33 are the semiconductor composite layers of above-mentioned metal doped polymer, its thickness is 100 μm-500 μm.

At least one face in two faces that first polymer material layer 32 and between two parties thin layer 33 are oppositely arranged arranges micro-nano concaveconvex structure (not shown), and/or the second polymer material layer 34 and at least one face between two parties in two faces being oppositely arranged of thin layer 33 arrange micro-nano concaveconvex structure (not shown);

When the first polymer material layer 32, between two parties thin layer 33, when the second polymer material layer 34 is provided with micro-nano concaveconvex structure on the surface, this micro-nano concaveconvex structure is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

In this embodiment, first electrode layer 31 and the second electrode lay 35 pairs of material therefors do not have particular provisions, the material of conductive layer can be formed all within protection scope of the present invention, be such as indium tin oxide, Graphene, nano silver wire film, metal or alloy, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.

At least one deck in first polymer material layer 32 and between two parties thin layer 33, and/or the second polymer material layer 34 and at least one deck material therefor between two parties in thin layer 33 are semiconductor composite layers.When the first polymer material layer 32, or thin layer 33 between two parties, or when the second polymer material layer 34 does not adopt semiconductor composite layer, its material therefor is selected from polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, cellulose sponge film, renewable sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polymethyl methacrylate film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde-phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber films, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film.Now, the first polymer material layer 32, or thin layer 33 between two parties, or the second polymer material layer 34 thickness is 100 μm-500 μm.

When each layer of the friction generator of this execution mode of the present invention is bent downwardly, the first polymer material layer 32 in friction generator is with thin layer 33 is surperficial between two parties, and/or second polymer material layer 34 produce electrostatic charge with the surperficial phase mutual friction of thin layer 33 between two parties, the generation of electrostatic charge can make to occur electrical potential difference between the first electrode layer 31 and the second electrode lay 35.Due to the existence of electrical potential difference between the first electrode layer 31 and the second electrode lay 35, free electron flows to the high side of electromotive force by by external circuit by the side that electromotive force is low, thus forms electric current in external circuit.When each layer of friction generator of the present invention returns to original state, at this moment the built-in potential be formed between the first electrode layer 31 and the second electrode lay 35 disappears, now will again produce reverse electrical potential difference between Balanced first electrode layer 31 and the second electrode lay 35, then free electron forms reverse current by external circuit.By repeatedly rubbing and recovering, just periodic ac signal can be formed in external circuit.In this execution mode of the present invention, adopt the semiconductor composite of metal doped polymer as the first polymer material layer 32, and/or thin layer 33 between two parties, and/or second polymer material layer 34, make the level of its specific insulation between metal volume resistivity and insulating material volume resistivity, thus effectively can reduce the work internal resistance of generator, the load capacity of friction generator can be improved within the specific limits.

It is the friction generator 4 of another embodiment of the present invention shown in Fig. 7 and 8.This friction generator 4 comprises the first electrode layer 41, first polymer material layer 42, intervening electrode layer 43, second polymer material layer 44 and the second electrode lay 45, wherein, at least one deck material therefor in first polymer material layer 42 and the second polymer material layer 44 is the semiconductor composite layer of above-mentioned metal doped polymer, and its thickness is 100 μm-500 μm.

On at least one face in two faces that first polymer material layer 41 and intervening electrode layer 43 are oppositely arranged, and/or second at least one face in two faces being oppositely arranged of polymer material layer 44 and intervening electrode layer 43 arranges micro-nano concaveconvex structure (not shown), described micro-nano concaveconvex structure is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

In this embodiment, first electrode layer 41 and the second electrode lay 45 pairs of material therefors do not have particular provisions, the material of conductive layer can be formed all within protection scope of the present invention, be such as indium tin oxide, Graphene, nano silver wire film, metal or alloy, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.

Described intervening electrode layer 43 is metal, metal oxide, alloy-layer, or patterned metal line-high polymer layer folds body, and wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy, and metal oxide is indium tin oxide.

At least one deck material therefor in first polymer material layer 42 and the second polymer material layer 44 is above-mentioned semiconductor composite layer.When the first polymer material layer 42 or the second polymer material layer 44 do not adopt semiconductor composite layer, its material therefor is selected from polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, cellulose sponge film, renewable sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polymethyl methacrylate film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde-phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber films, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film.Now, the first polymer material layer 42 or the second polymer material layer 44 thickness are 100 μm-500 μm.

When each layer of the friction generator of this execution mode of the present invention is bent downwardly, surperficial phase mutual friction produces electrostatic charge to the first polymer material layer 42, second polymer material layer 44 in friction generator with intervening electrode layer 43 respectively, thus cause between the first electrode layer 41 and intervening electrode layer 43, and there is electrical potential difference between intervening electrode layer 43 and the second electrode lay 45.Due between the first electrode layer 41 and intervening electrode layer 43, and the existence of electrical potential difference between intervening electrode layer 43 and the second electrode lay 45, free electron flows to the high side of electromotive force by by external circuit by the side that electromotive force is low, thus forms electric current in external circuit.When each layer of friction generator of the present invention returns to original state, at this moment be formed between the first electrode layer 41 and intervening electrode layer 43, and the built-in potential between intervening electrode layer 43 and the second electrode lay 45 disappears, now between Balanced first electrode layer 41 and intervening electrode layer 43, and again producing reverse electrical potential difference between intervening electrode layer 43 and the second electrode lay 45, then free electron forms reverse current by external circuit.By repeatedly rubbing and recovering, just periodic ac signal can be formed in external circuit.In this execution mode of the present invention, adopt the semiconductor composite of metal doped polymer as the first polymer material layer 42 and/or the second polymer material layer 44, make the level of its specific insulation between metal volume resistivity and insulating material volume resistivity, thus effectively can reduce the work internal resistance of generator, the load capacity of friction generator can be improved within the specific limits.

Set forth the enforcement of method of the present invention below by specific embodiment, one skilled in the art will appreciate that this should not be understood to the restriction to the claims in the present invention scope.

Raw materials used as follows in embodiment:

Table 1

Producer, model

Dimethyl silicone polymer	DOW CORNING
		Kynoar	Zhuzhou day Feng Huaxue plastic cement Co., Ltd
Polymethyl methacrylate	Qimei Industry Co., Ltd.
		Polyvinyl chloride	The municipal new plastic material Co., Ltd in Dongguan
Lauryl sodium sulfate	Tianjin Kai Tong chemical reagent Co., Ltd
		γ-chloropropyl trichloro-silane	Mountain of papers boat profit chemical plant, Jishui
Softex kw	The good Chemical Co., Ltd. of upper maritime affairs
		Tetra-n-butyl titanate	A upper marine Chemical Co., Ltd.

Embodiment 1

Friction generator is of a size of 3cm × 3cm, and gross thickness is approximately 500 μm.This friction generator 1 comprises the first electrode layer 11, first polymer material layer 12 of stacked setting, and the second electrode lay 13.The semiconductor composite of the first polymer material layer 12 metal doped polymer used.The following detailed description of the preparation method of this friction generator.

1. the preparation of semiconductor composite

Adopt 7.5g lauryl sodium sulfate to carry out surface treatment to 25g Argent grain (average volume particle diameter 50 μm), obtain through modifier surface modified metallic particles.This joined in 95g dimethyl silicone polymer (DOW CORNING) through modifier surface modified metallic particles 5g, curing agent (DOW CORNING 184), obtain mixed slurry, wherein the mass ratio of dimethyl silicone polymer and curing agent is 10:1.Described slurry is coated on silicon template surface equably, after Vacuum Degassing Process, adopts the mode of rotary coating to be removed by unnecessary slurry, form the polydimethylsiloxane liquid film that one deck is thin.After whole template is solidified 1 hour in the environment of 85 DEG C, PDMS membrane is peeled off from silicon template, make a side surface and the semiconductor composite film (thickness is 150um) that height of projection is the micro-nano concaveconvex structure of 500nm is set.

2. the preparation of friction generator

Adopt above-mentioned semiconductor composite film as the first polymer material layer 12, its surface not arranging micro-nano concaveconvex structure is plated the aluminium film of thickness 100nm, this aluminium film is the first electrode layer 11.

Adopt the Copper Foil of thickness 100 μm as the second electrode lay 13.Receive the surface of concaveconvex structure towards the second electrode lay 13 according to the dimension that is provided with of the first polymer material layer 12, the second electrode lay 13 is stacked on the first polymer material layer 12, obtains friction generator 1#.The edge of this friction generator seals with common adhesive plaster.

This friction generator is at I-V(current-voltage) measurement in show typical open circuit feature.Make the bending of friction generator generating period and release under 1M Ω load, open circuit voltage and work internal resistance (friction generator work internal resistance can be obtained by the mode of triboelectricity resistance under direct surveying work state) of friction generator are respectively 150V and 75M Ω.

Embodiment 2

1. the preparation of semiconductor composite

Adopt 7.5g lauryl sodium sulfate to carry out surface treatment to 25g alumina particles (average volume particle diameter 50 μm), obtain through modifier surface modified metallic particles.This is joined in the dimethylacetamide solution of Kynoar (95g) through modifier surface modified metallic particles 5g, obtains mixed slurry.Described slurry is coated on silicon template surface equably, after Vacuum Degassing Process, adopts the mode of rotary coating to be removed by unnecessary slurry, form the Kynoar liquid film that one deck is thin.After whole template is solidified 1 hour in the environment of 85 DEG C, polyvinylidene fluoride film is peeled off from silicon template, make a side surface and the semiconductor composite film (thickness is 150um) that height of projection is the micro-nano concaveconvex structure of 500nm is set.

2. the preparation of friction generator

This friction generator is at I-V(current-voltage) measurement in show typical open circuit feature.Make the bending of friction generator generating period and release under 1M Ω load, open circuit voltage and work internal resistance (friction generator work internal resistance can be obtained by the mode of triboelectricity resistance under direct surveying work state) of friction generator are respectively 90V and 95M Ω.

Embodiment 3-4

Embodiment 3-4 is substantially identical with the preparation method of embodiment 2, and difference is as shown in table 2.

Table 2

Make the bending and release of friction generator 3# and 4# generating period under 1M Ω load, open circuit voltage and the work internal resistance of 3# friction generator are respectively 100V and 70M Ω.Open circuit voltage and the work internal resistance of 4# friction generator are respectively 90V and 90M Ω.

Embodiment 5-8

Embodiment 5-8 is substantially identical with the preparation method of embodiment 1, and difference is as shown in table 3.

Table 3

Make the bending of friction generator 5#-8# generating period and release under 1M Ω load, open circuit voltage and the work internal resistance of 5# friction generator are respectively 115V and 85M Ω.Open circuit voltage and the work internal resistance of 6# friction generator are respectively 120V and 80M Ω.Open circuit voltage and the work internal resistance of 7# friction generator are respectively 135V and 80M Ω.Open circuit voltage and the work internal resistance of 8# friction generator are respectively 130V and 85M Ω.

Embodiment 9

1. the preparation of semiconductor composite

Adopt 50g lauryl sodium sulfate to carry out surface treatment to 50g Argent grain (average volume particle diameter 50 μm), obtain through modifier surface modified metallic particles.This joined in 99g dimethyl silicone polymer (DOW CORNING) through modifier surface modified metallic particles 1g, curing agent (DOW CORNING 184), obtain mixed slurry, wherein the mass ratio of dimethyl silicone polymer and curing agent is 10:1.Described slurry is coated on silicon template surface equably, after Vacuum Degassing Process, adopts the mode of rotary coating to be removed by unnecessary slurry, form the polydimethylsiloxane liquid film that one deck is thin.After whole template is solidified 1 hour in the environment of 85 DEG C, PDMS membrane is peeled off from silicon template, make a side surface and the semiconductor composite film (thickness is 150um) that height of projection is the micro-nano concaveconvex structure of 500nm is set.

2. the preparation of friction generator

Adopt the Copper Foil of thickness 100 μm as the second electrode lay 13.Receive the surface of concaveconvex structure towards the second electrode lay 13 according to the dimension that is provided with of the first polymer material layer 12, the second electrode lay 13 is stacked on the first polymer material layer 12, obtains friction generator 9#.The edge of this friction generator seals with common adhesive plaster.

This friction generator is at I-V(current-voltage) measurement in show typical open circuit feature.Make the bending of friction generator generating period and release under 1M Ω load, open circuit voltage and work internal resistance (friction generator work internal resistance can be obtained by the mode of triboelectricity resistance under direct surveying work state) of friction generator are respectively 100V and 90M Ω.

Embodiment 10

1. the preparation of semiconductor composite

Adopt 1g lauryl sodium sulfate to carry out surface treatment to 50g Argent grain (average volume particle diameter 50 μm), obtain through modifier surface modified metallic particles.This joined in 50g dimethyl silicone polymer (DOW CORNING) through modifier surface modified metallic particles 30g, curing agent (DOW CORNING 184), obtain mixed slurry, wherein the mass ratio of dimethyl silicone polymer and curing agent is 10:1.Described slurry is coated on silicon template surface equably, after Vacuum Degassing Process, adopts the mode of rotary coating to be removed by unnecessary slurry, form the polydimethylsiloxane liquid film that one deck is thin.After whole template is solidified 1 hour in the environment of 85 DEG C, PDMS membrane is peeled off from silicon template, make a side surface and the semiconductor composite film (thickness is 150um) that height of projection is the micro-nano concaveconvex structure of 500nm is set.

2. the preparation of friction generator

Adopt the Copper Foil of thickness 100 μm as the second electrode lay 13.Receive the surface of concaveconvex structure towards the second electrode lay 13 according to the dimension that is provided with of the first polymer material layer 12, the second electrode lay 13 is stacked on the first polymer material layer 12, obtains friction generator 10#.The edge of this friction generator seals with common adhesive plaster.

This friction generator is at I-V(current-voltage) measurement in show typical open circuit feature.Make the bending of friction generator generating period and release under 1M Ω load, open circuit voltage and work internal resistance (friction generator work internal resistance can be obtained by the mode of triboelectricity resistance under direct surveying work state) of friction generator are respectively 75V and 35M Ω.

Embodiment 11

1. the preparation of semiconductor composite

Adopt 1g lauryl sodium sulfate to carry out surface treatment to 30g Argent grain (average volume particle diameter 50 μm), obtain through modifier surface modified metallic particles.This joined in 90g dimethyl silicone polymer (DOW CORNING) through modifier surface modified metallic particles 10g, curing agent (DOW CORNING 184), obtain mixed slurry, wherein the mass ratio of dimethyl silicone polymer and curing agent is 10:1.Described slurry is coated on silicon template surface equably, after Vacuum Degassing Process, adopts the mode of rotary coating to be removed by unnecessary slurry, form the polydimethylsiloxane liquid film that one deck is thin.After whole template is solidified 1 hour in the environment of 85 DEG C, PDMS membrane is peeled off from silicon template, make a side surface and the semiconductor composite film (thickness is 150um) that height of projection is the micro-nano concaveconvex structure of 500nm is set.

2. the preparation of friction generator

Adopt the Copper Foil of thickness 100 μm as the second electrode lay 13.Receive the surface of concaveconvex structure towards the second electrode lay 13 according to the dimension that is provided with of the first polymer material layer 12, the second electrode lay 13 is stacked on the first polymer material layer 12, obtains friction generator 11#.The edge of this friction generator seals with common adhesive plaster.

This friction generator is at I-V(current-voltage) measurement in show typical open circuit feature.Make the bending of friction generator generating period and release under 1M Ω load, open circuit voltage and work internal resistance (friction generator work internal resistance can be obtained by the mode of triboelectricity resistance under direct surveying work state) of friction generator are respectively 110V and 75M Ω.

Doped conducting metal particle in the polymer, effectively can improve the electrical properties of polymer composites, effectively can reduce the work internal resistance of friction generator.When metallic particles doping increases gradually, because polymer composite material electrostatic property is obviously affected, the output performance of friction generator can present quick downward trend.Meanwhile, use the surface nature of modifier to metallic particles to modify, effectively can improve metallic particles dispersion effect in the polymer, thus ensure polymer composites stable in properties, homogeneity.

The basic structure of the friction generator that Fig. 9, Figure 10, Figure 11, Figure 12 adopt is identical with embodiment 1-11, is of a size of 3cm × 3cm, and gross thickness is approximately 500 μm, and difference is polymer material layer.Fig. 9 is for adopting adulterate 1wt% polymer (dimethyl silicone polymer) semiconductor composite of Cu to be the open circuit voltage output valve of the friction generator of polymer material layer, and Figure 10 adopts the Cu 1wt% polymer semiconductor composite material that adulterates to be the 1M Ω load voltage output valve of the friction generator of polymer material layer.Figure 11 is the open circuit voltage output valve of the friction generator of conventional polymeric materials layer (dimethyl silicone polymer, undope metal).Figure 12 is the 1M Ω load voltage output valve of the friction generator of conventional polymeric materials layer (dimethyl silicone polymer, undope metal).

Comparison diagram 9 and Figure 11, and Figure 10 and Figure 12 can find out, the semiconductor composite layer of doping metals particle improves the load capacity of friction generator.As can be seen here, the semiconductor composite layer of the appropriate metallic particles that adulterates will effectively improve the load capacity of friction generator, namely can improve the fan-out capability of friction generator to low impedance circuit.

Claims

1. apply the friction generator of semiconductor composite for one kind, it is characterized in that, comprise the first electrode layer of stacked setting, the first polymer material layer, and the second electrode lay, wherein the first polymer material layer material therefor is the semiconductor composite of metal doped polymer.

2. friction generator according to claim 1, it is characterized in that, at least one face in two faces that first polymer material layer and the second electrode lay are oppositely arranged arranges micro-nano concaveconvex structure, and the micro-nano concaveconvex structure that described first polymer material layer is arranged on the surface is the micro-nano concaveconvex structure of height of projection 200nm-100 μm; The micro-nano concaveconvex structure that described the second electrode lay is arranged on the surface is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

3. friction generator according to claim 1 and 2, it is characterized in that, first electrode layer material therefor is indium tin oxide, Graphene, nano silver wire film, metal or alloy, and wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy;

4. friction generator according to claim 1, is characterized in that, described friction generator comprises the second polymer material layer further, and this second polymer material layer is arranged between the first polymer material layer and the second electrode lay.

5. friction generator according to claim 4, it is characterized in that, at least one face in two faces that first polymer material layer and the second polymer material layer are oppositely arranged arranges micro-nano concaveconvex structure, and the micro-nano concaveconvex structure that described first polymer material layer and/or the second polymer material layer are arranged on the surface is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

6. the friction generator according to claim 4 or 5, is characterized in that, described second polymer material layer material therefor is the semiconductor composite of metal doped polymer.

7. the friction generator according to claim 4 or 5, it is characterized in that, described second polymer material layer material therefor is polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, cellulose sponge film, renewable sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polymethyl methacrylate film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde-phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber films, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film.

8. the friction generator according to any one of claim 4-7, is characterized in that, described friction generator comprises intervening electrode layer further, and described intervening electrode layer is arranged between the first polymer material layer and the second polymer material layer.

9. friction generator according to claim 8, it is characterized in that, described intervening electrode layer is metal, metal oxide, alloy-layer, or patterned metal line-high polymer layer folds body, wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy, and metal oxide is indium tin oxide.

10. friction generator according to claim 8 or claim 9, it is characterized in that, on at least one face in two faces that first polymer material layer and intervening electrode layer are oppositely arranged, and/or second at least one face in two face being oppositely arranged of polymer material layer and intervening electrode layer arranges micro-nano concaveconvex structure, described micro-nano concaveconvex structure is the micro-nano concaveconvex structure of height of projection 200nm-100 μm.

11. friction generator according to any one of claim 4-10, it is characterized in that, first electrode layer and the second electrode lay material therefor are indium tin oxide, Graphene, nano silver wire film, metal or alloy, and wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.

12. friction generator according to any one of claim 1-11, it is characterized in that, with parts by weight, described semiconductor composite comprises metallic particles 1-50 part, and polymeric base material 30-99 part.

13. friction generator according to claim 12, is characterized in that, with parts by weight, described semiconductor composite comprises metallic particles 1-10 part, and polymeric base material 90-99 part.

14. friction generator according to claim 12 or 13, it is characterized in that, described polymeric base material is dimethyl silicone polymer, Kynoar, polymethyl methacrylate or polyvinyl chloride.

15. friction generator according to any one of claim 12-14, it is characterized in that, described metallic particles is at least one in silver, copper, gold, aluminium, tungsten, nickel, iron, and its particle volume diameter is at 1-100 μm.

16. friction generator according to claim 15, is characterized in that, described metallic particles is through modifier surface modified metallic particles, and the weight ratio of metallic particles and modifier is 1-50:1.

17. friction generator according to claim 16, is characterized in that, the weight ratio of described metallic particles and modifier is 1-30:1.

18. friction generator according to claim 16 or 17, it is characterized in that, described modifier is polyvinylpyrrolidone, softex kw, dioctadecyl dimethyl ammonium chloride, sodium laurate, enuatrol, lauryl sodium sulfate, γ-chloropropyl trichloro-silane, γ-r-chloropropyl trimethoxyl silane, gamma-chloropropylmethyldimethoxysilane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-(methacryloxy) propyl trimethoxy silicane, β-(3,4 epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrimethoxysilane alkane, γ-mercaptopropyl trimethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-(3,2 glycidoxy) methyltrimethoxy silane, gamma-mercaptopropyltriethoxysilane, γ-(ethylenediamine base) propyl trimethoxy silicane, gamma-aminopropyl-triethoxy-silane, two-[3-(triethoxy) silicon propyl group tetrasulfide, diethylenetriamine base propyl trimethoxy silicane, γ-ethylenediamine ethyl triethoxy silicane alkane, Α-(ethylenediamine base) methyl triethoxysilane, anilinomethyl triethoxysilane, anilinomethyl trimethoxy silane, two (3-triethoxysilylpropyltetrasulfide) four nitric sulfids, Cyclohexyl Methyl Dimethoxysilane, tetra-n-butyl titanate, tetraisopropoxy titanium, 2-ethyl-1-hexanol titanium, metatitanic acid four n-propyl, poly(tributoxy titanium), isopropyl two oleic acid acyloxy (dioctyl phosphoric acid acyloxy) titanate esters, isopropyl three (dioctyl phosphoric acid acyloxy) titanate esters, isopropyl three oleic acid acyloxy titanate esters, isopropyl three (dodecyl benzenesulfonyl) titanate esters, three stearic acid isopropyl titanates, isopropyl three (dioctylphyrophosphoric acid acyloxy) titanate esters, two (dioctylphyrophosphoric acid acyloxy) ethylene titanate esters, tetra isopropyl two (dioctyl phosphito acyloxy) titanate esters, two (acetylacetone based) (diisopropyl) titanate esters, two (acetylacetone based) (isobutoxy isopropoxy) titanate esters, two (acetylacetone based) (ethyoxyl isopropoxy) titanate esters, two (triethanolamine) metatitanic acid diisopropyl ester, 2,2 ', 2 "-nitrogen base triethyl group titanate esters, at least one in two (ethyl acetoacetate) metatitanic acid diisobutyl ester.

19. friction generator according to claim 18, is characterized in that, described modifier is lauryl sodium sulfate.

20. 1 kinds of friction generator, it is characterized in that, comprise the first electrode layer of stacked setting, first polymer material layer, thin layer between two parties, the second polymer material layer and the second electrode lay, wherein, at least one deck in first polymer material layer and between two parties thin layer, and/or the second polymer material layer and at least one deck material therefor between two parties in thin layer are the semiconductor composites of metal doped polymer.

21. friction generator according to claim 20, is characterized in that, with parts by weight, described semiconductor composite comprises metallic particles 1-50 part, and polymeric base material 30-99 part.

22. friction generator according to claim 21, is characterized in that, with parts by weight, described semiconductor composite comprises metallic particles 1-10 part, and polymeric base material 90-99 part.

23. friction generator according to claim 21 or 22, it is characterized in that, described polymeric base material is dimethyl silicone polymer, Kynoar, polymethyl methacrylate or polyvinyl chloride.

24. friction generator according to any one of claim 21-23, it is characterized in that, described metallic particles is at least one in silver, copper, gold, aluminium, tungsten, nickel, iron, and its particle volume diameter is at 1-100 μm.

25. friction generator according to claim 24, is characterized in that, described metallic particles is through modifier surface modified metallic particles, and the weight ratio of metallic particles and modifier is 1-50:1.

26. friction generator according to claim 25, is characterized in that, the weight ratio of described metallic particles and modifier is 1-30:1.

27. friction generator according to claim 25 or 26, it is characterized in that, described modifier is polyvinylpyrrolidone, softex kw, dioctadecyl dimethyl ammonium chloride, sodium laurate, enuatrol, lauryl sodium sulfate, γ-chloropropyl trichloro-silane, γ-r-chloropropyl trimethoxyl silane, gamma-chloropropylmethyldimethoxysilane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-(methacryloxy) propyl trimethoxy silicane, β-(3,4 epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrimethoxysilane alkane, γ-mercaptopropyl trimethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-(3,2 glycidoxy) methyltrimethoxy silane, gamma-mercaptopropyltriethoxysilane, γ-(ethylenediamine base) propyl trimethoxy silicane, gamma-aminopropyl-triethoxy-silane, two-[3-(triethoxy) silicon propyl group tetrasulfide, diethylenetriamine base propyl trimethoxy silicane, γ-ethylenediamine ethyl triethoxy silicane alkane, Α-(ethylenediamine base) methyl triethoxysilane, anilinomethyl triethoxysilane, anilinomethyl trimethoxy silane, two (3-triethoxysilylpropyltetrasulfide) four nitric sulfids, Cyclohexyl Methyl Dimethoxysilane, tetra-n-butyl titanate, tetraisopropoxy titanium, 2-ethyl-1-hexanol titanium, metatitanic acid four n-propyl, poly(tributoxy titanium), isopropyl two oleic acid acyloxy (dioctyl phosphoric acid acyloxy) titanate esters, isopropyl three (dioctyl phosphoric acid acyloxy) titanate esters, isopropyl three oleic acid acyloxy titanate esters, isopropyl three (dodecyl benzenesulfonyl) titanate esters, three stearic acid isopropyl titanates, isopropyl three (dioctylphyrophosphoric acid acyloxy) titanate esters, two (dioctylphyrophosphoric acid acyloxy) ethylene titanate esters, tetra isopropyl two (dioctyl phosphito acyloxy) titanate esters, two (acetylacetone based) (diisopropyl) titanate esters, two (acetylacetone based) (isobutoxy isopropoxy) titanate esters, two (acetylacetone based) (ethyoxyl isopropoxy) titanate esters, two (triethanolamine) metatitanic acid diisopropyl ester, 2,2 ', 2 "-nitrogen base triethyl group titanate esters, at least one in two (ethyl acetoacetate) metatitanic acid diisobutyl ester.

28. friction generator according to claim 27, is characterized in that, described modifier is lauryl sodium sulfate.

29. friction generator according to any one of claim 20-28, it is characterized in that, at least one face in two faces that first polymer material layer and between two parties thin layer are oppositely arranged arranges micro-nano concaveconvex structure, and/or the second polymer material layer and at least one face between two parties in two faces being oppositely arranged of thin layer arrange micro-nano concaveconvex structure;

30. friction generator according to any one of claim 20-29, it is characterized in that, first electrode layer and the second electrode lay material therefor are indium tin oxide, Graphene, nano silver wire film, metal or alloy, and wherein metal is Au Ag Pt Pd, aluminium, nickel, copper, titanium, chromium, tin, iron, manganese, molybdenum, tungsten or vanadium; Alloy is aluminium alloy, titanium alloy, magnesium alloy, beryllium alloy, copper alloy, kirsite, manganese alloy, nickel alloy, lead alloy, ashbury metal, cadmium alloy, bismuth alloy, indium alloy, gallium alloy, tungsten alloy, molybdenum alloy, niobium alloy or tantalum alloy.

31. friction generator according to any one of claim 20-30, is characterized in that, when the first polymer material layer, or thin layer between two parties, or when the second polymer material layer does not adopt semiconductor composite, its material therefor is selected from polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, cellulose sponge film, renewable sponge film, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, polymethyl methacrylate film, polyvinyl alcohol film, polyisobutene film, pet film, polyvinyl butyral film, formaldehyde-phenol condensation polymer film, neoprene film, butadiene-propylene copolymer film, natural rubber films, polyacrylonitrile film, any one in acrylonitrile vinyl chloride copolymer film.